WO2012091531A3 - Light-emitting diode chip and method for manufacturing same - Google Patents

Light-emitting diode chip and method for manufacturing same Download PDF

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Publication number
WO2012091531A3
WO2012091531A3 PCT/KR2012/000005 KR2012000005W WO2012091531A3 WO 2012091531 A3 WO2012091531 A3 WO 2012091531A3 KR 2012000005 W KR2012000005 W KR 2012000005W WO 2012091531 A3 WO2012091531 A3 WO 2012091531A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting diode
diode chip
manufacturing same
crystalline wafer
Prior art date
Application number
PCT/KR2012/000005
Other languages
French (fr)
Korean (ko)
Other versions
WO2012091531A2 (en
Inventor
최원진
박정원
Original Assignee
일진머티리얼즈 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100140167A external-priority patent/KR101078469B1/en
Priority claimed from KR1020100140163A external-priority patent/KR20120078008A/en
Application filed by 일진머티리얼즈 주식회사 filed Critical 일진머티리얼즈 주식회사
Publication of WO2012091531A2 publication Critical patent/WO2012091531A2/en
Publication of WO2012091531A3 publication Critical patent/WO2012091531A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

Disclosed is a light-emitting diode chip having superior light-emitting efficiency, and a method for manufacturing same. The method for manufacturing a light-emitting diode chip according to the present invention comprises the following steps: (a) forming a plurality of light-emitting diode elements on a crystalline wafer; (b) allowing the inside of a surface to be cut of the crystalline wafer, on which the plurality of light-emitting diode elements are formed, to be irradiated with a laser beam so as to form a refraction buffering layer; and (c) cutting the crystalline wafer to separate the plurality of light-emitting diode elements from each other.
PCT/KR2012/000005 2010-12-31 2012-01-02 Light-emitting diode chip and method for manufacturing same WO2012091531A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0140167 2010-12-31
KR1020100140167A KR101078469B1 (en) 2010-12-31 2010-12-31 Light emitting diode chip and method of manufacturing the same
KR10-2010-0140163 2010-12-31
KR1020100140163A KR20120078008A (en) 2010-12-31 2010-12-31 Light emitting diode chip and method of manufacturing the same

Publications (2)

Publication Number Publication Date
WO2012091531A2 WO2012091531A2 (en) 2012-07-05
WO2012091531A3 true WO2012091531A3 (en) 2012-09-07

Family

ID=46383781

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/000005 WO2012091531A2 (en) 2010-12-31 2012-01-02 Light-emitting diode chip and method for manufacturing same

Country Status (2)

Country Link
TW (1) TWI536601B (en)
WO (1) WO2012091531A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006222288A (en) * 2005-02-10 2006-08-24 Toshiba Corp White led and manufacturing method therefor
KR100673641B1 (en) * 2006-01-04 2007-01-24 삼성전기주식회사 Vertically structured gan type light emitting diode device and method of manufacturing the same
JP2008108981A (en) * 2006-10-26 2008-05-08 Toyoda Gosei Co Ltd Light-emitting device
JP2010171341A (en) * 2009-01-26 2010-08-05 Panasonic Electric Works Co Ltd Semiconductor light emitting element
JP2010192835A (en) * 2009-02-20 2010-09-02 Showa Denko Kk Light emitting diode, method for manufacturing the same, and light emitting diode lamp

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006222288A (en) * 2005-02-10 2006-08-24 Toshiba Corp White led and manufacturing method therefor
KR100673641B1 (en) * 2006-01-04 2007-01-24 삼성전기주식회사 Vertically structured gan type light emitting diode device and method of manufacturing the same
JP2008108981A (en) * 2006-10-26 2008-05-08 Toyoda Gosei Co Ltd Light-emitting device
JP2010171341A (en) * 2009-01-26 2010-08-05 Panasonic Electric Works Co Ltd Semiconductor light emitting element
JP2010192835A (en) * 2009-02-20 2010-09-02 Showa Denko Kk Light emitting diode, method for manufacturing the same, and light emitting diode lamp

Also Published As

Publication number Publication date
TWI536601B (en) 2016-06-01
TW201228015A (en) 2012-07-01
WO2012091531A2 (en) 2012-07-05

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