WO2012091303A3 - 산화아연 나노로드, 금속 수송 증착법을 이용한 산화아연 나노로드 제조 방법 및 장치, 그 산화아연 나노로드를 이용한 전계 발광 디스플레이 나노로드 제조 방법 - Google Patents

산화아연 나노로드, 금속 수송 증착법을 이용한 산화아연 나노로드 제조 방법 및 장치, 그 산화아연 나노로드를 이용한 전계 발광 디스플레이 나노로드 제조 방법 Download PDF

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Publication number
WO2012091303A3
WO2012091303A3 PCT/KR2011/009203 KR2011009203W WO2012091303A3 WO 2012091303 A3 WO2012091303 A3 WO 2012091303A3 KR 2011009203 W KR2011009203 W KR 2011009203W WO 2012091303 A3 WO2012091303 A3 WO 2012091303A3
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WO
WIPO (PCT)
Prior art keywords
zinc oxide
nanorod
oxide nanorod
manufacturing
metal
Prior art date
Application number
PCT/KR2011/009203
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English (en)
French (fr)
Other versions
WO2012091303A2 (ko
Inventor
조학동
이상욱
파닌겐나디
강태원
Original Assignee
동국대학교 산학협력단
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Publication date
Application filed by 동국대학교 산학협력단 filed Critical 동국대학교 산학협력단
Publication of WO2012091303A2 publication Critical patent/WO2012091303A2/ko
Publication of WO2012091303A3 publication Critical patent/WO2012091303A3/ko

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/007—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

산화아연 나노로드, 금속 수송 증착법을 이용한 산화아연 나노로드 제조 방법 및 장치, 그 산화아연 나노로드를 이용한 전계 발광 디스플레이 나노로드 제조 방법이 개시된다. 본 발명의 일 실시 예에 따른 금속 수송 증착법을 이용한 산화아연 나노로드 제조 방법은 아연금속을 반응로 내의 소스영역에 위치시키고, 성장기판을 상기 반응로 내의 성장영역에 위치시키는 단계; 상기 아연금속이 증발하여 분자 상태가 되도록 상기 반응로의 내부를 가열하는 단계; 상기 반응로에 공급되는 운반가스를 이용하여 상기 분자 상태가 된 아연금속을 상기 성장영역으로 이동시키는 단계; 및 상기 성장기판 위에서 상기 성장영역에 직접 주입되는 산소가스를 상기 분자 상태가 된 아연금속과 반응시키는 단계를 포함한다.
PCT/KR2011/009203 2010-12-28 2011-11-30 산화아연 나노로드, 금속 수송 증착법을 이용한 산화아연 나노로드 제조 방법 및 장치, 그 산화아연 나노로드를 이용한 전계 발광 디스플레이 나노로드 제조 방법 WO2012091303A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100136885A KR20120074901A (ko) 2010-12-28 2010-12-28 산화아연 나노로드, 금속 수송 증착법을 이용한 산화아연 나노로드 제조 방법 및 장치, 그 산화아연 나노로드를 이용한 전계 발광 디스플레이 나노로드 제조 방법
KR10-2010-0136885 2010-12-28

Publications (2)

Publication Number Publication Date
WO2012091303A2 WO2012091303A2 (ko) 2012-07-05
WO2012091303A3 true WO2012091303A3 (ko) 2012-09-07

Family

ID=46383610

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/009203 WO2012091303A2 (ko) 2010-12-28 2011-11-30 산화아연 나노로드, 금속 수송 증착법을 이용한 산화아연 나노로드 제조 방법 및 장치, 그 산화아연 나노로드를 이용한 전계 발광 디스플레이 나노로드 제조 방법

Country Status (2)

Country Link
KR (1) KR20120074901A (ko)
WO (1) WO2012091303A2 (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050077680A (ko) * 2004-01-30 2005-08-03 한국과학기술연구원 기상증착법을 이용한 산화아연 나노로드 및 나노와이어의제조방법
JP2009078942A (ja) * 2007-09-26 2009-04-16 Univ Of Tokyo ＺｎＯナノロッドの堆積方法
JP2010018520A (ja) * 1996-02-26 2010-01-28 President & Fellows Of Harvard College 金属酸化物ナノロッドの製造方法
KR20100025986A (ko) * 2008-08-28 2010-03-10 성균관대학교산학협력단 캐리어 가스 도입한 유기금속 화학 증착법을 이용한 산화아연 구조체 성장방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010018520A (ja) * 1996-02-26 2010-01-28 President & Fellows Of Harvard College 金属酸化物ナノロッドの製造方法
KR20050077680A (ko) * 2004-01-30 2005-08-03 한국과학기술연구원 기상증착법을 이용한 산화아연 나노로드 및 나노와이어의제조방법
JP2009078942A (ja) * 2007-09-26 2009-04-16 Univ Of Tokyo ＺｎＯナノロッドの堆積方法
KR20100025986A (ko) * 2008-08-28 2010-03-10 성균관대학교산학협력단 캐리어 가스 도입한 유기금속 화학 증착법을 이용한 산화아연 구조체 성장방법

Also Published As

Publication number Publication date
WO2012091303A2 (ko) 2012-07-05
KR20120074901A (ko) 2012-07-06

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