WO2012086986A3 - 미세 패턴을 가지는 세라믹 템플릿의 제조 방법 및 이 방법에 의해 제조된 세라믹 템플릿 - Google Patents

미세 패턴을 가지는 세라믹 템플릿의 제조 방법 및 이 방법에 의해 제조된 세라믹 템플릿 Download PDF

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Publication number
WO2012086986A3
WO2012086986A3 PCT/KR2011/009804 KR2011009804W WO2012086986A3 WO 2012086986 A3 WO2012086986 A3 WO 2012086986A3 KR 2011009804 W KR2011009804 W KR 2011009804W WO 2012086986 A3 WO2012086986 A3 WO 2012086986A3
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WO
WIPO (PCT)
Prior art keywords
manufacturing
coating layer
ceramic template
concave portion
ceramic
Prior art date
Application number
PCT/KR2011/009804
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English (en)
French (fr)
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WO2012086986A2 (ko
Inventor
김사라
정준호
최대근
최준혁
이지혜
김기돈
정주연
전소희
박성제
김상욱
신동욱
Original Assignee
한국기계연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 한국기계연구원 filed Critical 한국기계연구원
Publication of WO2012086986A2 publication Critical patent/WO2012086986A2/ko
Publication of WO2012086986A3 publication Critical patent/WO2012086986A3/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/165—Monolayers, e.g. Langmuir-Blodgett

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Moulds, Cores, Or Mandrels (AREA)

Abstract

미세 패턴을 가지는 세라믹 템플릿의 제조 방법이 개시된다. 세라믹 템플릿의 제조 방법은 돌출부를 포함하는 유연 몰드를 제조하는 단계와, 기판 상에 금속-유기물 전구체 용액을 도포하여 코팅층을 형성하고, 유연 몰드로 코팅층을 가압한 상태에서 코팅층을 경화시킨 후 유연 몰드를 제거하여 제1 오목부를 포함하는 금속산화물 패턴을 형성하는 단계와, 적어도 2개의 반복 단위로 이루어진 블록 공중합체를 포함하는 블록 공중합체 코팅층을 제1 오목부에 채우는 단계와, 블록 공중합체 코팅층을 소결하여 반복 단위들을 미세 상 분리시킴으로써 복수의 고분자 블록으로 이루어진 자기 조립 구조를 형성하는 단계와, 복수의 고분자 블록 중 일부의 고분자 블록을 제거하여 제2 오목부를 포함하는 미세 패턴을 형성하는 단계를 포함한다.
PCT/KR2011/009804 2010-12-20 2011-12-19 미세 패턴을 가지는 세라믹 템플릿의 제조 방법 및 이 방법에 의해 제조된 세라믹 템플릿 WO2012086986A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100130785A KR101235360B1 (ko) 2010-12-20 2010-12-20 미세 패턴을 가지는 세라믹 템플릿의 제조 방법
KR10-2010-0130785 2010-12-20

Publications (2)

Publication Number Publication Date
WO2012086986A2 WO2012086986A2 (ko) 2012-06-28
WO2012086986A3 true WO2012086986A3 (ko) 2012-08-23

Family

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Application Number Title Priority Date Filing Date
PCT/KR2011/009804 WO2012086986A2 (ko) 2010-12-20 2011-12-19 미세 패턴을 가지는 세라믹 템플릿의 제조 방법 및 이 방법에 의해 제조된 세라믹 템플릿

Country Status (2)

Country Link
KR (1) KR101235360B1 (ko)
WO (1) WO2012086986A2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101358963B1 (ko) * 2012-07-16 2014-02-04 (주)제니스월드 정전척 용사 세라믹층 확대 제조 장치 및 방법
JP5768074B2 (ja) * 2013-02-28 2015-08-26 株式会社東芝 パターン形成方法
KR102231471B1 (ko) * 2016-08-09 2021-03-25 한국전자통신연구원 메타 물질 구조체 및 그 제조 방법
TWI789420B (zh) * 2017-08-31 2023-01-11 美商康寧公司 可攜式電子裝置的外殼及製造其之方法
CN108400180B (zh) * 2018-01-25 2020-06-16 北京工业大学 纹理衬底增强柔性器件在机械应力下的电学稳定性
KR102118938B1 (ko) * 2018-06-04 2020-06-04 동국대학교 경주캠퍼스 산학협력단 이종 접합 부재 및 그의 제조방법
CN111900316B (zh) * 2020-08-11 2023-05-09 珠海冠宇电池股份有限公司 一种隔膜以及锂离子电池
CN113816773B (zh) * 2021-11-09 2023-04-25 铜川市耀州窑唐宋陶业有限公司 一种高品质填彩艺术陶瓷及其制作工艺

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060025877A (ko) * 2004-09-17 2006-03-22 한국과학기술원 스크린 마스크와 연성몰드를 이용한 다중 미세 형상제조방법
KR100879790B1 (ko) * 2007-07-23 2009-01-22 한국과학기술원 고분자 몰드를 이용하여 다양한 미세 패턴을 형성하는 방법
KR20090080395A (ko) * 2008-01-21 2009-07-24 주식회사 하이닉스반도체 자기 조립 패턴용 조성물 및 상기 조성물을 이용한 반도체소자의 미세 패턴 형성 방법
KR20090083091A (ko) * 2008-01-29 2009-08-03 삼성전자주식회사 블록 공중합체를 이용한 미세 패턴 형성 방법
KR20090087353A (ko) * 2008-02-12 2009-08-17 포항공과대학교 산학협력단 자기조립 블록 공중합체를 이용한 나노 구조물 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060025877A (ko) * 2004-09-17 2006-03-22 한국과학기술원 스크린 마스크와 연성몰드를 이용한 다중 미세 형상제조방법
KR100879790B1 (ko) * 2007-07-23 2009-01-22 한국과학기술원 고분자 몰드를 이용하여 다양한 미세 패턴을 형성하는 방법
KR20090080395A (ko) * 2008-01-21 2009-07-24 주식회사 하이닉스반도체 자기 조립 패턴용 조성물 및 상기 조성물을 이용한 반도체소자의 미세 패턴 형성 방법
KR20090083091A (ko) * 2008-01-29 2009-08-03 삼성전자주식회사 블록 공중합체를 이용한 미세 패턴 형성 방법
KR20090087353A (ko) * 2008-02-12 2009-08-17 포항공과대학교 산학협력단 자기조립 블록 공중합체를 이용한 나노 구조물 제조방법

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Publication number Publication date
KR20120069292A (ko) 2012-06-28
WO2012086986A2 (ko) 2012-06-28
KR101235360B1 (ko) 2013-02-20

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