WO2012081759A1 - Procédé pour fabriquer une cellule solaire à couche mince organique ayant une structure à canaux - Google Patents
Procédé pour fabriquer une cellule solaire à couche mince organique ayant une structure à canaux Download PDFInfo
- Publication number
- WO2012081759A1 WO2012081759A1 PCT/KR2010/009460 KR2010009460W WO2012081759A1 WO 2012081759 A1 WO2012081759 A1 WO 2012081759A1 KR 2010009460 W KR2010009460 W KR 2010009460W WO 2012081759 A1 WO2012081759 A1 WO 2012081759A1
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- WIPO (PCT)
- Prior art keywords
- substrate
- forming
- solar cell
- manufacturing
- thin film
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 238000000059 patterning Methods 0.000 claims abstract description 8
- 238000007639 printing Methods 0.000 claims description 26
- 238000005192 partition Methods 0.000 claims description 15
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 230000002209 hydrophobic effect Effects 0.000 claims description 10
- 238000000465 moulding Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000007646 gravure printing Methods 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 6
- 238000007645 offset printing Methods 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 6
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 5
- 239000000443 aerosol Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 230000005661 hydrophobic surface Effects 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 58
- 239000004065 semiconductor Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000976 ink Substances 0.000 description 3
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- UUIQMZJEGPQKFD-UHFFFAOYSA-N Methyl butyrate Chemical compound CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a method for manufacturing an organic thin film solar cell having a channel structure, and more particularly, to a method for manufacturing a solar cell that can easily solve defects and compensate for defects according to the manufacture of a substrate composed of independent cells, and can simplify the manufacturing process. .
- solar cells are attracting attention as a new energy source because they use sunlight that can be infinite.
- Most of the solar cells currently in practical use are inorganic solar cells using monocrystalline silicon, polycrystalline silicon, and amorphous silicon.
- these inorganic silicon solar cells have a drawback that their manufacturing process is complicated and their cost is high. Therefore, these inorganic silicon solar cells are not widely used for general household use.
- a solar cell uses the photovoltaic effect of a semiconductor and is made by combining a p-type semiconductor and an n-type semiconductor.
- the electrons of the n-type semiconductor diffuse into the p-type semiconductor due to the concentration difference of impurities. Holes diffuse from p-type to n-type.
- the energy of electrons in the conduction band of the p-type semiconductor is narrower than that of the n-type semiconductor, and the energy of holes in the valence band of the n-type semiconductor is higher than that of the p-type semiconductor. Is generated.
- a solar cell manufacturing method using a conventional printing method such as inkjet, forming a positive electrode pattern on the surface of the substrate, forming a conductive polymer layer on a portion of the surface of the substrate on which the positive electrode pattern is formed, the positive electrode pattern and the conductive polymer Forming an organic photoelectric layer on the surface of the substrate, and forming a negative electrode pattern on a portion of the organic photoelectric layer, wherein each of the steps is performed through a printing method.
- Manufacturing methods are known.
- the present invention for solving the above problems in the solar cell manufacturing method using a printing method, to improve the ease and reliability of manufacturing, to solve the manufacturing defects of each cell and to provide a solar cell manufacturing method that is easy to complement the There is a purpose.
- a method of manufacturing a substrate by patterning such that horizontal walls are formed side by side at predetermined intervals on the prepared substrate surface, and forming a lower electrode (anode) on the surface on which the substrate wall surface is formed.
- the electrode pattern Forming a buffer layer on the surface, forming an active layer (organic photoelectric layer) on the surface of the buffer layer, forming an electron accepting layer on the surface of the active layer, and forming an upper electrode (cathode) pattern on the surface of the electron receiving layer; Characterized in that comprises a.
- the substrate the glass temperature is 250 degrees Celsius or less, characterized in that provided with a transparent film.
- the step of manufacturing the substrate the step of mounting the stamper and the substrate with the wall surface formed in the molding machine in the chamber, the step of converting the chamber into a vacuum state and the heating temperature and pressing force so that the wall pattern formed on the stamper is transferred to the substrate, It characterized in that it comprises a step of controlling the pressing time and transferring.
- the wall surface of the substrate is repeatedly formed at intervals of 5 mm or less, and the length of the wall surface is 10 times or more than the distance between the wall surfaces.
- the lower electrode forming step may include coating a hydrophobic material on the surface of the substrate using spin coating, placing a mask according to a lower electrode pattern to be formed on the surface of the hydrophobic material, and irradiating ultraviolet rays. Changing the hydrophobic material to hydrophilic according to a mask pattern, and depositing the lower electrode.
- the forming of the lower electrode may include positioning a mask according to a lower electrode pattern to be formed on the surface of the substrate having hydrophobic characteristics, changing a hydrophobic surface to hydrophilic according to a mask pattern by irradiating ultraviolet rays, and the lower electrode. It characterized in that it comprises a step of depositing.
- substrate is characterized by being 10 times or less of the space
- the buffer layer is characterized in that formed of poly ethylenedioxythiophene (PEDT) / poly styrene sulphonic acid (PSS).
- PEDT poly ethylenedioxythiophene
- PSS poly styrene sulphonic acid
- the electron accepting layer is formed of LiF (Lithium Fluoride) or LiO 2 .
- the lower electrode and the upper electrode pattern may be formed to be spaced apart from each other.
- the forming of the buffer layer and the forming of the active layer may include any of inkjet printing, aerosol jet printing, EHD (electrohydrodynamic) jet printing, gravure printing, gravure offset printing, flexo printing, and screen printing. It is characterized by one printing technique.
- the forming of the partition wall of the substrate may include any one of inkjet printing, aerosol jet printing, electrohydrodynamic (EHD) jet printing, gravure printing, gravure offset printing, flexographic printing, and screen printing. .
- EHD electrohydrodynamic
- the present invention configured as described above has the advantage that the electrode pattern is easily formed by forming a wall surface on the substrate surface, and the manufacturing defects can be easily solved and supplemented as each cell is manufactured to operate independently.
- the etching process is not used in the entire process as it is manufactured only by the thermoforming process, the printing process, or the selective deposition process, there is a high advantage in the ease of the process and the environment.
- FIG. 1 is a flowchart of a method for manufacturing an organic thin film solar cell having a channel structure according to the present invention
- FIG. 2 is a flow chart showing a manufacturing step of a substrate on which a horizontal wall surface is formed according to the present invention
- FIG. 3 is a top view of a substrate on which a wall is formed according to the present invention.
- FIG. 4 is a perspective view showing a partition wall forming process according to another embodiment of the present invention.
- FIG. 5 is a top view showing a state in which the lower electrode is formed on the substrate surface in the solar cell manufacturing method according to the invention
- Figure 6 is a top view showing a state in which the upper electrode is formed on the substrate surface in the solar cell manufacturing method according to the present invention.
- vacuum chamber 720 mold
- a method of manufacturing a substrate by patterning a horizontal wall surface 110 to be formed side by side on the prepared substrate surface, Forming a lower electrode (anode) pattern on the surface of the substrate wall, forming a buffer layer 300 on the surface of the electrode pattern, and forming an active layer (organic photoelectric layer; 400) on the surface of the buffer layer And forming an electron accepting layer 500 on the surface of the active layer and forming an upper electrode (cathode) pattern on the surface of the electron accepting layer.
- the solar cell manufacturing method by forming a cell independent by patterning the wall surface arranged horizontally parallel to the substrate surface, and manufacturing a solar cell using the substrate having such a pattern can increase the manufacturing reliability
- FIG. 1 is a flowchart of a method of manufacturing an organic thin film solar cell having a channel structure according to the present invention.
- a transparent or thin and flexible plastic substrate 100 is prepared, and then a wall is formed to be horizontally arranged side by side on one surface.
- the wall surface is configured to have independent cells, and forms a wall pattern on the surface of the substrate after the transfer process.
- FIG. 2 is a flow chart showing the manufacturing step of the substrate with a horizontal wall surface formed in accordance with the present invention.
- the substrate according to the present invention is an organic thin film type substrate having transparency capable of transmitting sunlight, having excellent moldability and heat resistance, and having flexibility, and in terms of formability, polyethylene (PE) resin and polycarbonate (PC) resin.
- PE polyethylene
- PC polycarbonate
- PMMA Polymethyl methacrylate
- PA polyamide
- PEN polyenthylene naphthalate
- the glass temperature is 250 degrees Celsius or less. Use a transparent film.
- the molding machine corresponds to a molding machine that is implemented by compression in a vacuum atmosphere.
- the atmosphere of the chamber is switched to a vacuum atmosphere, and then the heating temperature, the heating pressure, and the heating time are set to compress the stamper and the substrate.
- the heating temperature is 180 degrees
- the heating pressure is 19 megapascals (Mpa)
- the heating time can be formed to optimize the wall surface of the substrate by setting the process conditions to about 19 minutes.
- the final substrate is completed by separating the substrate on which the transfer to the substrate is completed on the molding machine.
- FIG. 3 is a top view of a substrate on which a wall is formed according to the present invention.
- the wall surface formed as the surface of the solar cell substrate is arranged side by side horizontally to form a cell, the interval between each wall is 5 mm or less, the length of the wall is preferably about 10 times or more of the interval between the wall surface.
- the width of the wall surface is less than or equal to the smallest size of 100 micrometers, the thickness of the substrate, 1/10 of the gap between the wall surface, the height of the wall surface is preferably formed to 1 to 2 micrometers.
- the interval between cells corresponds to approximately 10 mm.
- a substrate having a channel structure having a wall pattern arranged horizontally side by side on the substrate surface has an advantage in that electrode (lower electrode) patterning is easy and defects are easily solved or supplemented because each cell is configured independently.
- FIG. 4 is a perspective view showing a partition wall forming process in another embodiment according to the present invention.
- partition walls perpendicular to the wall surface are formed on the lower electrode pattern at regular intervals to form a plurality of grid-shaped electrode patterns.
- the partition wall forming process is further applied, the problem of the existing technology of forming the grid structure from the beginning is solved, thereby having the advantages of the grid structure and increasing the ease of the process.
- the partition wall may be formed by applying any one of inkjet printing, aerosol jet printing, electrohydrodynamic (EHD) jet printing, gravure printing, gravure offset printing, flexographic printing, and screen printing.
- EHD electrohydrodynamic
- Figure 5 is a top view showing a state in which the lower electrode is formed on the surface of the solar cell manufacturing method according to the present invention.
- the lower electrode (anode) 200 is formed from the substrate having the wall surface.
- the lower electrode forms AZO (Al-doped Zinc Oxide) by CVD deposition method.
- AZO Al-doped Zinc Oxide
- CVD deposition method When the deposition process is described in detail, first, a substrate is mounted on a spin coater to form a hydrophobic material on the substrate surface, OTS (OctadecylTricholro Silane) is added and operated for a predetermined time to coat the hydrophobic material on the substrate. After the coating is completed, a mask corresponding to the electrode pattern is manufactured, and the mask is placed on a substrate to convert UV into hydrophilicity according to the mask. An Al-doped Zinc Oxide (AZO) transparent conductive film is formed using ALD (Atomic Layer Deposition) according to the lower electrode formation pattern converted to hydrophilicity.
- ALD Atomic Layer Deposition
- the buffer layer 300, the organic photoelectric layer (active layer; 400), and the electron accepting layer (Lif layer; 500) are sequentially printed and deposited as shown in FIG. 1.
- the buffer layer 300 is necessary to form the organic photoelectric layer.
- the buffer layer is required due to the small wettability according to the interface anisotropy between the inorganic lower electrode and the organic photoelectric layer of the organic material.
- Baytron P VP Al 4083 grade was used as polyethylenedioxythiphene: polystyrene sulfonic acid (PEDT: PSS) as a buffer layer on the AZO electrode.
- PDT polystyrene sulfonic acid
- 4083 is not formed by ink jet spraying, and is formed by ink jet spraying by adding glycerol and DI water. And heat treatment for 10 minutes at 140 degrees in air for adhesion and moisture removal of the substrate and the buffer layer.
- an organic photoelectric layer (active layer) 400 is formed.
- the organic photoelectric layer poly (3-hexyl-thiophene) (P3HT) and phenyl-C61 butyric acid methylester (PCBM), which is an electron receiving material, are used.
- P3HT uses EE grade Rieke methal
- PCBM uses Nano-C. Chlorobenzene was used as a solvent for dissolving the two organic materials, and the two materials were dissolved at a weight ratio of 10: 8, and foreign substances were filtered using a Teflon filter to filter more than 0.45um and then sprayed using a micro fab equipment. Finally, heat treatment was performed at 70 ° C.
- the step of forming the pre-buffer layer and the process of forming the active layer (organic photoelectric layer) may be any of inkjet printing, aerosol jet printing, EHD (electrohydrodynamic) jet printing, gravure printing, gravure offset printing, flexo printing, and screen printing. It can be formed by applying one printing technique.
- the electron accepting layer may be further formed on the surface of the organic photoelectric layer.
- the electron accepting layer (buffer layer) is used to improve performance when manufacturing a device such as an organic solar cell or an organic light emitting diode.
- the upper electrode is used as aluminum (most commonly), LiF (Lithium Fluoride) or LiO 2 is used. Can be formed.
- FIG. 6 is a top view illustrating a state in which an upper electrode is formed on a surface of a solar cell according to the present invention. Finally, an upper electrode (cathode) 600 is formed on the surface of the electron accepting layer.
- a preferred example of the upper electrode is formed by depositing aluminum (Al), and as shown in FIG. 6, the pattern of the lower electrode and the pattern of the upper electrode are spaced apart from each other to form a short circuit between both electrodes.
- a protective layer is finally formed on the surface of the substrate on which the upper electrode is formed.
- the protective layer is intended to block air and moisture in order to maintain the state of the device after the cathode deposition process is completed, and by using a flexible substrate, the protective layer also uses a resin having flexibility, a representative material is Polyvinylpyrrolidone (PVP) is a stable polymer with high mechanical strength. It is soluble in organic solvents (IPA, Benzene, etc.) and is possible in liquid phase processes. In this case, the protective layer may be formed through spin coating or printing coating.
- the present invention configured as described above uses a substrate having a channel structure, and thus has high manufacturing reliability, and as a cell, it is easy to solve and compensate for manufacturing defects.
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- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
La présente invention concerne un procédé pour fabriquer une cellule solaire à couche mince organique ayant une structure à canaux. Le procédé pour fabriquer la cellule solaire à couche mince organique comprend les étapes de : fabrication d'un substrat par modelage du substrat afin de former des parois mutuellement horizontales (110) côte-à-côte sur la surface d'un substrat préparé ; formation d'un motif d'électrode inférieure (anode ; 200) sur la surface de laquelle les parois du substrat sont formées ; formation d'une couche tampon (300) sur la surface d'un motif d'électrode ; formation d'une couche active (couche photoactive organique ; 400) sur la surface de la couche tampon ; formation d'une couche acceptrice d'électron (500) sur la surface de la couche active ; et formation d'un motif d'électrode supérieure (cathode ; 600) sur la couche acceptrice d'électron.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2010-0129166 | 2010-12-16 | ||
KR1020100129166A KR101207504B1 (ko) | 2010-12-16 | 2010-12-16 | 채널 구조의 유기박막 태양전지 제조방법 |
Publications (1)
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WO2012081759A1 true WO2012081759A1 (fr) | 2012-06-21 |
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Family Applications (1)
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PCT/KR2010/009460 WO2012081759A1 (fr) | 2010-12-16 | 2010-12-29 | Procédé pour fabriquer une cellule solaire à couche mince organique ayant une structure à canaux |
Country Status (2)
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KR (1) | KR101207504B1 (fr) |
WO (1) | WO2012081759A1 (fr) |
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KR101366843B1 (ko) * | 2012-11-13 | 2014-03-03 | 재단법인대구경북과학기술원 | 고개구율 태양전지 모듈 및 그 제조방법 |
KR101469235B1 (ko) * | 2013-07-03 | 2014-12-09 | 한밭대학교 산학협력단 | 유기 태양전지의 제조장치 및 제조방법 |
KR101539959B1 (ko) * | 2015-01-06 | 2015-07-30 | 성안기계 (주) | 유기 태양 전지 제조 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080223445A1 (en) * | 2007-03-12 | 2008-09-18 | Northwestern University | Electron-blocking layer / hole-transport layer for organic photovoltaics and applications of same |
KR20090089526A (ko) * | 2008-02-19 | 2009-08-24 | 주식회사 엘지화학 | 태양전지용 선택적 에미터의 제조방법 및 그에 사용되는마스크 패턴 제조용 페이스트. |
US20100170568A1 (en) * | 2007-09-27 | 2010-07-08 | Murata Manufacturing Co., Ltd | Ag electrode paste, solar battery cell, and method of manufacturing the same |
-
2010
- 2010-12-16 KR KR1020100129166A patent/KR101207504B1/ko active IP Right Grant
- 2010-12-29 WO PCT/KR2010/009460 patent/WO2012081759A1/fr active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080223445A1 (en) * | 2007-03-12 | 2008-09-18 | Northwestern University | Electron-blocking layer / hole-transport layer for organic photovoltaics and applications of same |
US20100170568A1 (en) * | 2007-09-27 | 2010-07-08 | Murata Manufacturing Co., Ltd | Ag electrode paste, solar battery cell, and method of manufacturing the same |
KR20090089526A (ko) * | 2008-02-19 | 2009-08-24 | 주식회사 엘지화학 | 태양전지용 선택적 에미터의 제조방법 및 그에 사용되는마스크 패턴 제조용 페이스트. |
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KR101207504B1 (ko) | 2012-12-05 |
KR20120067639A (ko) | 2012-06-26 |
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