WO2022124523A1 - Composition comprenant un sel métallique d'acide sulfonique de polystyrène, dispositif à semi-conducteur et son procédé de fabrication - Google Patents

Composition comprenant un sel métallique d'acide sulfonique de polystyrène, dispositif à semi-conducteur et son procédé de fabrication Download PDF

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WO2022124523A1
WO2022124523A1 PCT/KR2021/010756 KR2021010756W WO2022124523A1 WO 2022124523 A1 WO2022124523 A1 WO 2022124523A1 KR 2021010756 W KR2021010756 W KR 2021010756W WO 2022124523 A1 WO2022124523 A1 WO 2022124523A1
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poly
composition
pss
layer
acid
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서정화
강주환
아즈맛알리
브라이트워커
안요한
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동아대학교 산학협력단
경희대학교 산학협력단
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to a composition comprising a polystyrene sulfonic acid metal salt, a semiconductor device, and a method for manufacturing the same.
  • perovskite is the most versatile and promising material applicable to a wide range of optoelectronic devices such as solar cells, light emitting diodes (LEDs), photodetectors and lasers.
  • Perovskite generally has a crystal structure of the formula ABX 3 , where A is an organic cation (CH 3 NH 3 ), B is a metal cation (Pb, Sn), and X is a halogen anion (I, Br and Cl).
  • CH 3 NH 3 PbI 3 MAbI 3
  • the organometallic halide perovskite has high charge carrier mobility, large carrier diffusion length, It exhibits excellent performance in solar cells and LEDs due to properties such as low exciton binding energy and tunable electroluminescence.
  • PSCs perovskite solar cells
  • HTL hole transport layer
  • HTM hole transport material
  • properties such as an appropriate HOMO (High Occupied Molecular Orbital) energy level, good photochemical stability, hole mobility and proper solubility in organic solvents are required.
  • HTMs in PSC are divided into three categories: organic small molecule HTM, organic polymer HTM and inorganic HTM.
  • HTMs copper-based HTMs are one of the most promising candidates.
  • spiro-oMeTAD 2,2',7,7'-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene
  • PEDOT:PSS poly(3,4-dioxyethylenethiophene): Poly(styrene sulfonate)
  • Chemical doping is one of the most powerful ways to improve the electronic conductivity of HTMs and to change semiconductor properties and energy band structure to create effective junctions.
  • Organic amines and alkyl ammonium cations can generate n-doping in organic and hybrid semiconductors, and various n-type dopant interfacial materials have been reported.
  • tetrabutylammonium halides TAAX
  • TBAX tetrabutylammonium halides
  • TBAX salt exhibits the same characteristic effect of reducing the work function ⁇ of the cathode in perovskite devices as in organic solar cells, and is used as a moisture-resistant n-type dopant for perovskite devices.
  • Polymers with low molecular weight TBAX, amine and ammonium functional groups can produce similar doping effects.
  • Non-conjugated polyelectrolytes such as polyethyleneimine (PEI) and ethoxylated polyethyleneimine (PEIE) are used as an interlayer between the electron transport layer (ETL) and indium tin oxide (ITO) for efficient electron injection and hole blocking.
  • p-dopants such as SnCl 4 , ( p -BrC 6 H 4 ) 3 NSbCl 6 , tris(2-(1 H -pyrazol-1-yl) pyridine) cobalt(iii) have improved the electronic properties of spiro-MeOTAD. investigated to improve.
  • other p-dopants including ionic liquids, metal-based salts, TCNQ (tetra cyanoquino dimethane) derivatives, oxidized radical cation salts, and the like, are being studied.
  • Wei Shi and co-workers reported that anionic polymers have excellent hole transport and electron blocking properties as well as good solubility in polar solvents, enabling effective multilayer solution processing in polymer light emitting diodes (PLEDs).
  • PSCs perovskite solar cells
  • PEDOT triarylamine-based organic semiconductors
  • HTL hole transport layer
  • PSS acidic poly (3,4-ethtyleynedioxythiophene)-poly(styrene sulfonate)
  • the present invention in order to solve the above-mentioned problems, by applying a mixture of polystyrene sulfonic acid metal salts (Metal salts of polystyrene sulfonic acid, Polystyrene sulfonate salt) and anionic electrolyte, to control the negative charge balance of the electrolyte backbone, semiconductor material
  • polystyrene sulfonic acid metal salts Metal salts of polystyrene sulfonic acid, Polystyrene sulfonate salt
  • anionic electrolyte to control the negative charge balance of the electrolyte backbone, semiconductor material
  • the present invention is to provide a semiconductor device comprising a hole transport layer comprising the composition according to the present invention, supporting p-doping in the semiconductor layer, and enabling efficient extraction of p-type carriers from the anode.
  • the present invention provides a method for manufacturing a semiconductor device according to the present invention.
  • polystyrene sulfonic acid metal salt relates to a composition comprising a.
  • the metal of the polystyrene sulfonic acid metal salt is lithium (Li), magnesium (Mg), copper (Cu), lead (Pb), silver (Ag), nickel (Ni), palladium ( Pd), sodium (Na), potassium (K), aluminum (Al), zirconium (Zr), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron ( Fe), zinc (Zn), platinum (Pt) and gold (Au) may include at least one selected from the group consisting of.
  • the mass ratio of the polystyrene sulfonic acid metal salt to the anionic polymer electrolyte may be 10: 1 to 1: 10.
  • the anionic polymer electrolyte is, PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate), polyacrylic acid (PAA, polyacrylic acid), polymethylacrylic acid (PMA, polymethyl acrylic acid) ), polyvinylsulfonic acid, poly-alpha-methyl sulfonic acid, poly-ethylidene sulfonic acid, polyglutamic acid, poly Aspartic acid, tri polyphosphoric acid, poly (4-vinyl pyridinium chloride) (poly (4-vinyl pyridinium chloride)), poly (2-vinyl pyridinium chloride) (poly (2-vinyl pyridinium chloride), poly (4-vinyl-2-hydroxyethyl pyridinium) chloride) and poly [2-vinyl-3- (2) -Sulfoethyl imidazolinium betaine)] (poly[
  • the composition includes polyphenylene, polypyrrole, polyaniline, polythiophene, polyperylene, poly(3-alkyl-thiophene), polyfullerene, polyflu Orene (polyfluorene), polyphenylene (polyphenylene), polypyrene (polypyrene), polyazulene (polyazulene), polynaphthalene (polynaphthalene), polyacetylene (polyacetylene, PAC), poly-p-phenylenevinylene (poly(p) -phenylene vinylene, PPV), polypyrrole (PPY), polycarbazole, polyindole, polyzepine, poly(thienylene vinylene), polyaniline, PANI ), polythiophene (poly(thiophene)), poly(p-phenylene sulfide, PPS), poly(3,4-ethylenedioxythiophene, PEDOT), poly(
  • the composition may provide a p-type dopant to the semiconductor material.
  • the composition may further include a water-soluble solvent, and the water-soluble solvent may include water.
  • the composition may be used for manufacturing a hole transport layer of a semiconductor device.
  • the composition may provide a film having a light transmittance of 90% or more.
  • a first electrode layer a second electrode layer; A hole transport layer comprising the composition of claim 1 between the first electrode layer and the second electrode layer; and a semiconductor layer formed on the hole transport layer. It relates to a semiconductor device comprising a.
  • the hole transport layer may have a thickness of 1 nm to 50 nm.
  • the hole transport layer may have a light transmittance of 90% or more.
  • At least a portion of the semiconductor layer may form an interface with the hole transport layer, and the interface or the semiconductor region adjacent to the interface may include a p-type doped region in both.
  • the surface roughness of the semiconductor layer may be 1.00 RMS to 1.5 RMS.
  • the semiconductor layer includes perovskite, wherein the perovskite is ABX 3 , A 2 BX 4 , ABX 4 or A n-1 B n X 3n+1 ( n is an integer between 2 and 6), wherein A is an organoammonium or alkali metal material, B is a metal material, and X may be a halogen element.
  • the semiconductor device may be an optoelectronic device
  • the semiconductor layer may be a photoactive layer or a photoluminescent layer
  • the optoelectronic device may be a light emitting device or a solar cell.
  • forming the hole transport layer comprises: annealing at a temperature of 0 °C to 130 °C after coating the composition; may include.
  • the forming of the semiconductor layer on the hole transport layer may include: forming a deposition film of a semiconductor material on the hole transport layer; It may include; annealing the deposited film at a temperature of 0 °C to 130 °C.
  • the present invention can provide a novel composition for a hole transport layer that can effectively form a p-type contact in a semiconductor device and increase the work function of an electrode.
  • the present invention provides a composition that can be utilized as a p-type interface material based on a convenient and inexpensive polymer electrolyte, and the composition is applied not only to solar cells but also to other organic and hybrid semiconductor devices such as thin film transistors and LEDs This can improve the p-type contact and provide performance improvements such as device efficiency.
  • FIG. 1 shows a Perovskite Solar Cell (PSC) device using Cu:PSS as an HTL according to an embodiment of the present invention, and shows a schematic diagram of a device structure and a p-type doping effect of Cu:PSS.
  • PSC Perovskite Solar Cell
  • FIG. 2A illustrates Fermi-level pinning (red line: HOMO and blue line: LUMO) in an interlayer and energy level diagram, according to an embodiment of the present invention.
  • 2b is a work function of different thicknesses of Cu:PSS (IP: ionization potential, ⁇ : work function, ⁇ e : electron injection barrier, ⁇ h : hole injection barrier, E vac , according to an embodiment of the present invention. : vacuum level and ⁇ : interfacial dipole)).
  • 3A shows an S 2p XPS spectrum according to an embodiment of the present invention.
  • 3b is a work function (Cu:PSS A: small amount of PEDOT:PSS and Cu:PSS and PEDOT: PSS and Cu:PSS M: PEDOT:PSS and Cu:PSS mixture) is shown.
  • FIG. 4 shows SEM images of MAPbI 3 formed on four different HTLs, namely Cu:PSS, Cu:PSS A, Cu:PSS M and PEDOT:PSS, according to an embodiment of the present invention.
  • FIG. 5a shows the characteristics of MAPbI 3 formed on four different HTLs , namely Cu:PSS, Cu:PSS A, Cu:PSS M and PEDOT:PSS, according to an embodiment of the present invention. it has been shown
  • FIG. 5b shows the characteristics of MAPbI 3 formed on four different HTLs, namely Cu:PSS, Cu:PSS A, Cu:PSS M, and PEDOT:PSS, according to an embodiment of the present invention.
  • the EQE curves are shown in FIG. it has been shown
  • FIG. 5C illustrates, in accordance with an embodiment of the present invention, MAPbI 3 formed on four different HTLs, namely Cu:PSS, Cu:PSS A, Cu:PSS M and PEDOT:PSS; PEDOT: PSS HTL calculated by the transfer matrix method as showing the characteristics of the optical field intensity (Optical field intensity) in the device using the HTL is shown.
  • Figure 6a shows the light intensity dependence J SC , according to an embodiment of the present invention.
  • FIG. 6B illustrates the light intensity dependence V OC , according to an embodiment of the present invention.
  • FIG. 6c shows the FF at a low luminous intensity of 1 mWcm -2 related to the luminance dependence according to an embodiment of the present invention, and the right y-axis shows the difference from the ideal FF of 90% in MAPbI 3 .
  • FIG. 6d shows the intensity-dependent FF according to an embodiment of the present invention, and the right y-axis shows the difference from the ideal FF of 90% in MAPbI 3 .
  • FIG. 7 shows light transmittance of various HTLs on a glass substrate according to an embodiment of the present invention, and a range of 90 to 100% light transmittance can be confirmed.
  • the present invention relates to a composition comprising a polystyrenesulfonic acid metal salt.
  • the composition comprises: a polystyrenesulfonic acid metal salt; and an anionic polymer electrolyte.
  • the present invention can be applied as a material for a hole transport layer (HTL) in a semiconductor device by applying a mixture of polystyrene sulfonic acid metal salt and anionic polymer electrolyte, and is applied to the hole transport layer to create a p-type contact And, it can help improve the performance of a semiconductor device, and, for example, can improve the charge collection efficiency and photocurrent generation of the perovskite layer in the PSC. It will be described in more detail with reference to FIG. 1 .
  • HTL hole transport layer
  • composition according to the present invention in FIG. 1 can provide an effective p-type polyelectrolyte dopant, ie when applying a PSS backbone with an anionic charge with a reduced Cu 2+ counterion, in this system Cu 2+ ions easily receive electrons on the semiconductor, leaving an excessive negative charge on the PSS backbone, and can not only balance the negative charge in the PSS polyelectrolyte backbone, but also compensate for the p-type carriers on the semiconductor as a result.
  • the metal in the polystyrene sulfonic acid metal salt may include at least one metal selected from alkali metals, alkaline earth metals and transition metals.
  • lithium (Li), magnesium (Mg), copper (Cu), lead (Pb), silver (Ag), nickel (Ni), palladium (Pd), sodium (Na), potassium (K), aluminum (Al), zirconium (Zr), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), zinc (Zn), platinum (Pt) and gold (Au) may contain at least one selected from the group consisting of, the metal is preferably to generate a metal ion having a monovalent to divalent oxidation number in a metal salt, for example, Li + , Mg 2+ , Cu 2+ , Pb 2+ , Ag 2+ , Ni 2+ and Pd 2+ .
  • the polystyrene sulfonic acid metal salt may be represented by the following Chemical Formula 1, in which n is 1 to 350, and M + may be the aforementioned metal ion.
  • the mixing ratio (mmol) of the polystyrene sulfonic acid metal salt to the anionic polymer electrolyte is 10: 1 to 1: 10; 9: 1 to 5: 5; Or 9: 1 to 6: 4, and when included within the above range, it is possible to provide an optimized pneumatic transport layer, and improve the performance and stability of the device.
  • an improved function as a hole transport layer can be provided, for example, when used as a hole transport layer, a p-type contact (p- type contact) and reduce the acidity of the anionic polymer electrolyte, that is, PEDOT:PSS, as well as reduce the hysteresis of the semiconductor device and improve the performance of various semiconductor devices.
  • a p-type contact p- type contact
  • PEDOT:PSS anionic polymer electrolyte
  • the polystyrene sulfonic acid metal salt and the anionic polymer electrolyte 0.01 wt% to less than 100 wt% of the composition; 0.1% to 30% by weight; 1% to 20% by weight; Alternatively, when included in an amount of 1 wt% to 10 wt%, performance improvement and stability of the device can be secured when included in the above range.
  • the concentration ratio (mmol) of the metal (metal of polystyrene sulfonic acid metal salt): anionic polymer: polystyrene sulfonic acid is 1 to 10: 1 to 10: 1 to 400; 1-4: 1-7: 300-400; 1-4: 1-7: 30-100; 2 ⁇ 4 : 1 ⁇ 7 : 5 ⁇ 8; Or 3-4: 1-7: 6-7.
  • the pH of the composition is 3 to 7.5; 4 to 7.5; or 5 to 7.5.
  • the anionic polymer electrolyte is, PEDOT: PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate), polyacrylic acid (PAA, polyacrylic acid), polymethylacrylic acid (PMA, polymethyl acrylic acid), poly polyvinylsulfonic acid, poly-alpha-methyl sulfonic acid, poly-ethylidene sulfonic acid, polyglutamic acid, polyaspartic acid (poly aspartic acid), tri polyphosphoric acid, poly (4-vinyl pyridinium chloride) (poly (4-vinyl pyridinium chloride)), poly (2-vinyl pyridinium chloride) (poly (2- vinyl pyridinium chloride), poly(4-vinyl-2-hydroxyethyl pyridinium) chloride) and poly[2-vinyl-3-(2-sulfoethyl) It may include at least one selected from
  • the composition includes polyphenylene, polypyrrole, polyaniline, polythiophene, polyperylene, poly(3-alkyl-thiophene), polyfullerene, polyfluorene ), polyphenylene, polypyrene, polyazulene, polynaphthalene, polyacetylene, PAC, poly-p-phenylene vinylene , PPV), polypyrrole (PPY), polycarbazole, polyindole, polyzepine, poly(thienylene vinylene), polyaniline (PANI), poly thiophene (poly (thiophene)), poly (p-phenylene sulfide, PPS), poly (3,4-ethylenedioxy thiophene (poly (3,4-ethylenedioxy thiophene, PEDOT), At least one conductive polymer selected from the group consisting of poly(3,4-ethylenedioxythiophene)-tetramethacrylate (PE), PEDOT), At least one
  • the composition may further include a water-soluble solvent in a residual amount or an appropriate content, for example, water; and water-soluble alcohols such as methanol, ethanol and isopropanol, and hydrophilic solvents such as acetone and ketone. It may further include dimethylformamide (DMF), N-Methyl-2-pyrrolidone (NMP), 1,4-dioxane, dimethyl sulfoxide (DMSO), toluene, methyl ethyl ketone, and the like.
  • a water-soluble solvent in a residual amount or an appropriate content
  • water water-soluble alcohols
  • hydrophilic solvents such as acetone and ketone.
  • DMF dimethylformamide
  • NMP N-Methyl-2-pyrrolidone
  • DMSO dimethyl sulfoxide
  • toluene methyl ethyl ketone, and the like.
  • a film comprising or prepared from the composition according to the present invention may be provided, wherein the film is a film, a sheet, a thin film, etc., wherein the film is 80% or more; It may exhibit a light transmittance of 90% or more or 95% or more.
  • the light transmittance is related to a light wavelength greater than or equal to ultraviolet light, for example, 300 nm to 900 nm.
  • the film is formed using a solution process, vapor deposition, or both, and the film has a thickness of 1 nm or more; more than 10 nm; or 100 nm or more, preferably 1 nm to 30 nm; 1 nm to 20 nm, or 1 nm to 5 nm.
  • the present invention relates to a semiconductor device comprising the composition according to the present invention.
  • the semiconductor device includes: a first electrode layer; a second electrode layer; a hole transport layer comprising the composition according to the present invention between the first electrode layer and the second electrode layer; and a semiconductor layer formed on the hole transport layer.
  • the semiconductor device according to the present invention can improve the performance of the device by improving the p-type contact point in the device by applying the p-type interface material according to the composition according to the present invention.
  • the first electrode is a transparent or semi-transparent electrode, Ti, Zn, Sr, In, Ba, K, Nb, Fe, Ta, W, Sa, Bi, Ni, Cu, Mo, Ce, Oxides including those selected from the group consisting of Pt, Ag, Rh, Ru, V and mixtures thereof, for example, indium-tin oxide (ITO; indium-tin oxide), fluorine-containing tin oxide (FTO; Fluorine- doped tin oxide), indium zinc oxide (IZO), aluminum-doped zinc oxide (AZO; aluminum-zinc oxide; ZnO:Al), aluminum tin oxide (ATO; aluminum-tin oxide; SnO 2 :Al) and tin-based It may include at least one selected from the group consisting of oxides and zinc oxide (ZnO).
  • ITO indium-tin oxide
  • FTO fluorine-containing tin oxide
  • IZO indium zinc oxide
  • AZO aluminum-doped zinc oxide
  • ZnO aluminum
  • the first electrode is formed on a substrate
  • the substrate may include an organic material such as plastic having flexibility, an inorganic material, or a metal, for example, Si, SiO 2 , Ge, GaN, AlN, GaP, InP, GaAs, SiC, Al 2 O 3 , LiAlO 3 , MgO, quartz, sapphire, graphite, graphene, as an organic material, polyimide (PI), polycarbonate (PC), polyethersulfone (PES), Polyether ether ketone (PEEK), polybutylene terephthalate (PBT), polyethylene terephthalate (PET), polyvinyl chloride (PVC), polyethylene (PE), ethylene copolymer, polypropylene (PP), propylene copolymer, Poly (4-methyl-1-pentene) (TPX), polyarylate (PAR), polyacetal (POM), polyphenylene oxide (PPO), polysulfone (PSF), polyphenylene
  • PI polyimide
  • the second electrode is the same as or different from the first electrode, for example, Al, Ag, Au, W, Cu, Ti, Zn, Sr, In, Ba, K, Nb, Fe, It may include at least one selected from the group consisting of Ta, Sa, Bi, Ni, Mo, Ce, Pt, Rh, Ru, V, and a conductive polymer.
  • it may further include at least one or more selected from the group consisting of a hole injection layer, an electron blocking layer, an electron transport layer and an electron injection layer between the first electrode and the second electrode, for example, the An electron transport layer, an electron injection layer, an electron blocking layer, etc. may be included between the semiconductor layer, that is, the photoactive layer and the second electrode, and the stacking order thereof may be appropriately selected.
  • the electron transport layer is , fullerene (C60), fullerene derivative, perylene, PBI (polybenzimidazole), PTCBI (3,4,9,10-perylene-tetracarboxylic bis-benzimidazole) PCBM ((6,6)-phenyl-C 61 -butyric acid-methylester), PCBCR((6,6)-phenyl-C61-butyric acid cholesteryl ester), PCBM((6,6)-phenyl-C 61 -butyric acid-methylester), PBI(polybenzimidazole), PCBCR ((6,6)-phenyl-C 61 -butyric acid-cholesteryl ester) and PTCBI (3,4,9,10-perylene-tetracarboxylic bis-benzimidazole)
  • PCBM ((6,6)-phenyl-C 61 -butyric acid-methylester)
  • PCBCR (6,6)-phenyl-C 61
  • the hole transport layer to form a p-type contact point with the semiconductor layer, the hole transport layer, 80% or more; It may exhibit a light transmittance of 90% or more or 95% or more.
  • the light transmittance is related to a light wavelength greater than or equal to ultraviolet light, for example, 300 nm to 900 nm.
  • the thickness of the hole transport layer is 1 nm or more; more than 10 nm; 100 nm or more, preferably 1 nm to 30 nm; 1 nm to 20 nm or 1 nm to 5 nm. Performance of a semiconductor device, that is, an optoelectronic device, may be improved by applying the thickness and the light transmittance.
  • the semiconductor layer is an optoelectronic device, and the ptoelectronic device requires a hole injection or transport material, an electron injection or transport material, or a light emitting material to drive the device.
  • a photoelectronic device includes a light emitting device, a solar cell, an organic photo conductor drum, an optical sensor, a thin film transistor, and an organic and hybrid semiconductor device such as an LED, all of which are devices.
  • a hole injection or transport material, an electron injection or transport material, a photoelectric material (or a semiconductor material), a light emitting material (organic or inorganic), etc. are required to drive the .
  • the optoelectronic device may refer to a device that requires charge exchange between an electrode using holes or electrons and an organic or inorganic material.
  • the photoelectric device may include a photoactive layer (or semiconductor layer) or a photoluminescent layer
  • the optoelectronic device includes a light emitting device, a solar cell (eg, an inverted solar cell, a perovskite solar cell). ) can be
  • the photoactive layer includes perovskite, ABX 3 , A 2 BX 4 , ABX 4 or A n-1 B n X 3n+1 (n is an integer between 2 and 6) Including the structure of, wherein A is an organoammonium or alkali metal material, wherein B is a metal material, and X may be a halogen element.
  • the organic ammonium is an amidinium-based organic ion, for example, (CH 3 NH 3 ) n , ((C x H 2x+1 ) n NH 3 ) 2 (CH 3 NH 3 ) n , (RNH 3 ) 2 , (C n H 2n+1 NH 3 ) 2 , (CF 3 NH 3 ), (CF 3 NH 3 ) n , ((C x F 2x+1 ) n NH 3 ) 2 (CF 3 NH 3 ) n , ((C x F 2x+1 ) n NH 3 ) 2 or (C n F 2n+1 NH 3 ) 2 ) and (n is an integer greater than or equal to 1, x is an integer greater than or equal to 1), and the alkali metal is Na, K, Rb, Cs, or Fr, wherein B is a divalent transition metal, rare earth metal, alkaline earth metal, Pb, Sn, Ge, Ga, In, Al,
  • the perovskite nanocrystal particles may be in the form of a sphere, a cylinder, an elliptical column, or a polygonal column.
  • the light emitting layer may include an organic or inorganic light emitting material or a semiconductor material applicable to a light emitting device, and is not specifically mentioned herein.
  • At least a portion of the semiconductor layer may form an interface with the hole transport layer, and a p-type doped region may be included in both of the interface or the semiconductor region adjacent to the interface.
  • the semiconductor layer may have a surface roughness of 1.00 to 1.5 RMS and a thickness of 1.5 to 20 nm.
  • the present invention relates to a method of manufacturing a semiconductor device according to the present invention.
  • the manufacturing method includes: forming a hole transport layer; and forming a semiconductor layer on the hole transport layer.
  • the step of forming the hole transport layer, coating the composition according to the present invention in a solution process to form a hole transport layer the steps of preparing a polystyrene sulfonic acid metal salt; preparing an anionic polymer electrolyte; forming a composition in which the polystyrene sulfonic acid metal salt and the anionic polymer electrolyte are mixed; forming a coating layer by coating the composition with a solution process; and annealing the coating layer.
  • the manufacturing method according to the present invention is a very transparent and cost-effective polyelectrolyte hole transport layer (HTL) composed of a polystyrene sulfonic acid metal salt and an anionic polymer by applying a simple solution-processed method.
  • HTL polyelectrolyte hole transport layer
  • the semiconductor device can provide an effect of improving the performance of the semiconductor device.
  • it can be applied as a PSC device, that is, inverted perovskite solar cells, and in a composition comprising Cu:PSS and PEDOT:PSS, the easily reduced Cu 2+ counter ion is a PSS polyelectrolyte.
  • Balancing the negative charge of the backbone can support p-doping at the interface with perovskite and Cu:PSS and allow efficient extraction of p-type carriers from the anode.
  • the PCE power conversion efficiency
  • the anionic polymer electrolyte is prepared by the above-mentioned components.
  • the preparing of the polystyrene sulfonic acid metal salt may include preparing a metal precursor solution; preparing a polystyrene sulfonic acid solution; reacting while mixing the metal precursor solution and the polystyrene sulfonic acid solution; isolating the product; and washing and drying the separated product.
  • the step of preparing the polystyrene sulfonic acid metal salt may be prepared according to Scheme 1 below.
  • n is 1 to 350
  • M + may be the aforementioned monovalent to divalent metal ion.
  • the metal precursor in the step of preparing the metal precursor solution, is a metal, metal oxide and silicide, oxide, carbonate, bicarbonate, acetate, nitride, oxynitride, chloride, fluoride, oxyfluoride, hydroxide, oxalic acid It may include at least one selected from the group consisting of salts, metal salts of sulfates and nitrates.
  • the metal precursor solution is mixed with a solvent capable of dispersing and/or dissolving the metal precursor, and may include, for example, water, an organic solvent, or both, and the organic solvent may be a water-soluble solvent. .
  • the water-soluble solvent may be water; It may include an organic solvent or both, and a water-soluble alcohol such as methanol, ethanol and isopropanol, and a hydrophilic solvent such as acetone and ketone. It may further include dimethylformamide (DMF), N-Methyl-2-pyrrolidone (NMP), 1,4-dioxane, dimethyl sulfoxide (DMSO), toluene, methyl ethyl ketone, and the like.
  • the concentration of the metal precursor may be 0.005 wt% (0.05 mg/ml) to 0.1 wt% (1 mg/ml).
  • the step of preparing the polystyrene sulfonic acid solution may include mixing polystyrene sulfonic acid and a solvent to have a pH of 3 or less; 2.5 or less; 2 or less; Or preparing a solution of 1 to 1.5.
  • the concentration of the polystyrene sulfonic acid may be 0.01 mol/L to 1.02 mol/L.
  • the solvent is a solvent capable of dispersing and/or solventing the polystyrene sulfonic acid, and may include, for example, water, an organic solvent, or both.
  • the organic solvent may be a water-soluble solvent.
  • the molecular weight of the polystyrene sulfonic acid is 100 g/mol or more; 200 g/mol or more; 5,000 g/mol or more; 10,000 g/mol or more; 50,000 g/mol, or 200 to 75,000 g/mol, and may have a weight average or number average molecular weight.
  • the step of reacting while mixing the metal precursor solution and the polystyrene sulfonic acid solution 0 °C to 60 °C; 5°C to 40°C; 10°C to 30°C;
  • the reaction may proceed by dropping the metal precursor solution to the polystyrene sulfonic acid solution while stirring at room temperature (rt).
  • separating the product; And the step of washing and drying the separated product is for separating the desired product from the reactant mixture after the reaction proceeds, depending on whether the desired product is a liquid and/or solid (or precipitate), extraction, centrifugation, filter (Filtration), reduced pressure, etc. can be selected suitably. After filtration, redissolving, precipitation, or both may be appropriately selected to obtain a desired product, and impurities, by-products, etc. may be removed through separation, precipitation and/or washing processes, and dried. This step may be repeated several times.
  • the obtained product has a pH of 7 or less at a concentration of 2 mM or less; 6 or less; 4 or less; or 2 or less.
  • the step of forming a composition in which the polystyrene sulfonic acid metal salt and the anionic polymer electrolyte are mixed is to prepare a composition according to the present invention, that is, a coating solution, the above-mentioned solvent, the polystyrene sulfonic acid metal salt and an anionic polymer electrolyte.
  • the solution process is, paint brushing, spray coating, doctor blade, immersion-pulling method It may be (Dip-Drawing), spin coating (Spin Coating), inkjet printing (inkjet printing), slot die coating (slot die coating) and the like.
  • the step of annealing the coating layer may be selectively applied, for example, the deposition film at a temperature of 0° C. to 130° C., a time of 0 minutes to 10 minutes, and an inert gas, air and/or air atmosphere. , can be annealed in a vacuum atmosphere.
  • the forming of the semiconductor layer on the hole transport layer may include: forming a deposition film of a semiconductor material on the hole transport layer; and annealing the deposited film.
  • the deposited film in the step of annealing the deposited film, may be annealed at a temperature of 0° C. to 130° C., 0 minutes to 10 minutes, and inert gas, air and/or air atmosphere, and vacuum atmosphere. have.
  • the step of forming a deposition film of a semiconductor material on the hole transport layer may use a spin coating method, a deposition method or a printing method using a semiconductor material precursor, a semiconductor material and/or a semiconductor material source, etc.
  • a spin coating method for example, the solution process mentioned above, inkjet printing, gravure printing, spray coating, doctor blade, bar coating, gravure coating, brush painting, slot-die coating, thermal evaporation, e-beam evaporation), sputtering, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), etc.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • ALD atomic layer deposition
  • Cu(OAc) 2 was dissolved in 0.13M concentration of water:MeOH solvent (1:1, by volume). 1 molar equivalent of a poly(4-styrenesulfonic acid) solution (the pH of the solution (1.8 mg/5 mL H 2 O) is 1.1) was added. The mixture was precipitated with a 10-fold volume of IPA, and ethyl acetate and a few drops of hexane were sequentially added thereto to induce complete precipitation of the product. The mixture was centrifuged at 3000 rpm for 10 minutes to separate the product from the solution. A dense cyan gel was obtained after centrifugation and re-dissolved in H 2 O.
  • the solution was re-precipitated in IPA, ethyl acetate and hexane.
  • the viscous gel was multitudered under dry IPA to extract the residue to give a solid material which was washed with additional IPA and hexanes and dried under vacuum.
  • the dilute solution (4.8 mg/5 mL H 2 O) has a pH of 5.9.
  • Inverted PSC was fabricated in the structure of ITO/HTL/MAPbI3/Al.
  • ITO-coated glass substrates were washed with detergent and then sonicated in deionized water and acetone for 10 minutes.
  • Different HTLs were used to build the device. That is, four different types of HTL were used, including Cu:PSS, PEDOT:PSS, a mixture of Cu:PSS and PEDOT:PSS, and Cu:PSS with PEDOT:PSS as an additive.
  • Cu:PSS HTLs were deposited from aqueous solutions at concentrations of 0.005, 0.015, 0.025 and 0.035 wt%. 0.015 wt % of Cu:PSS was used to prepare the mixture with PEDOT:PSS.
  • Cu:PSS and PEDOT:PSS mixture HTL was prepared with Cu:PSS and PEDOT:PSS in 5 mixing ratios (wt/wt): (Cu:PSS): (PEDOT:PSS), (0.9: 0.1), ( 0.8 : 0.2), (0.7 : 0.3), (0.6 : 0.4), (0.5 : 0.5).
  • PEDOT:PSS For Cu:PSS solutions containing PEDOT:PSS as additive, volumes of PEDOT:PSS (10, 20, 30, 40 and 50 ⁇ L) were added to 1 mL of Cu:PSS solution. All HTLs were spin cast in air at 2000 rpm and then annealed at 120 °C. However, PEDOT:PSS was annealed in air at 140 °C for 10 min.
  • MAPbI 3 films were prepared using a previously reported procedure (A. Ali, JH Kang, JH Seo, B. Walker, Adv. Eng. Mater. 2020 , 22 , 1900976.). Briefly, perovskite films were deposited via a solvent engineering method by spin coating the precursor solution in two steps of 3,500 rpm for 30 s and 6,500 rpm for 5 s. In the second step, anhydrous chlorobenzene (45 ⁇ L) was dropped into the center of the substrate.
  • the prepared film was placed on a hot plate at 90° C. for 10 minutes under N 2 atmosphere.
  • PC 61 BM was spin coated at 2,000 rpm for 30 sec and annealed at 60 °C for 10 min.
  • 100 nm of Al was deposited under a vacuum of 1 ⁇ 10 -6 Torr.
  • JV curves were measured using a Keithley 2635 source measure unit under AM 1.5G illumination with an irradiation intensity of 100 mW ⁇ cm -2 and calibrated using standard silicon reference solar cells prior to testing.
  • various luminous intensity data were collected using a neutral density filter obtained from Thorlabs.
  • XPS X-ray photoelectron spectroscopy
  • UPS ultraviolet photoelectron spectroscopy
  • surface images were measured. The results are shown in Table 1 and FIGS. 2A to 2B, 3A to 3B, 4, 5A to 5D, 6A to 6D to and 7 .
  • Figure 2a shows the energy level diagram of Cu:PSS at the ITO/Cu:PSS interface used as HTL in the PSC device.
  • Cu cations and PSS anions are interfacial dipoles ( can create an interfacial dipole, ⁇ , increasing the effective ⁇ of ITO
  • Cu:PSS is deposited on ITO with HTL, it forms an interfacial dipole increased by +0.24 eV, and an ohmic 6 p-type contact is formed. and can facilitate hole extraction.
  • Figure 2b shows the ⁇ of the ITO substrate when the Cu:PSS film is deposited with various thicknesses, and it can be confirmed that the ITO ⁇ value increases from 4.70 eV to 4.87 eV when the Cu:PSS film thickness is 1.8 nm.
  • ⁇ increases to a maximum of 5.12 eV
  • ⁇ decreases slightly to 5.05 and 4.97 eV for the films of 4.5 and 18.4 nm thickness. That is, for optimal hole extraction, the energy level is between the energy level of ITO and the perovskite balance band, and the optimal Cu:PSS thickness may be 3.1 nm.
  • PEDOT:PSS was added as an additive to the optimized Cu:PSS solution in small amounts.
  • PEDOT:PSS was added in variable amounts from 10 ⁇ L to 50 ⁇ L, and the concentrations (based on mmol) of each component (Cu 2+ , PEDOT and PSS) in these solutions were calculated, and the relative concentrations (0.35: 0) to the Cu:PSS solution. : 0.70), and relative concentrations (0.35 : 0.13 : 1.31), (0.35 : 0.26 : 1.93), (0.35 : 0.40: 2.55), (0.35: 0.53: 3.16) and (0.35: 0.66: 3.78).
  • the ⁇ values of Cu:PSS and Cu:PSS A in the UPS spectrum in FIG. 3b are 5.12 and 5.14 eV, respectively.
  • ⁇ decreased by 5.06 eV
  • V OC decreased slightly to about 1.00 V.
  • PEDOT:PSS without Cu has a low ⁇ such as 5.00 eV, and it can be confirmed that a V OC of 0.89 V is observed.
  • Cu:PSS and a mixture of Cu:PSS and PEDOT:PSS were prepared, and the characteristics were defined as UPS and XPS, and it was confirmed that the desired effect on the electron band structure at the anode was confirmed. That is, when integrating Cu:PSS in X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS), it can be confirmed that the work function of the anode and the effect of increasing the upward band bending effect are increased.
  • XPS X-ray photoelectron spectroscopy
  • UPS ultraviolet photoelectron spectroscopy
  • Cu:PSS was observed to work effectively from PSC to HTL, using similar device parameters as PEDOT:PSS but with lower fill factor (FF) values.
  • FF fill factor
  • the mixture of Cu:PSS and PEDOT:PSS shows much improved performance compared to PEDOT:PSS alone.
  • the combination of Cu:PSS and PEDOT:PSS maintains high FF values and exhibits PCE up to 19.44%, and according to the transmittance data in FIG. %) showed an average transmittance (300 nm to 900 nm) in the range of 98.8 to 99.3 %, which can reduce parasitic absorption and improve J SC values.
  • the present invention provides an inverted PSC to which HTM (Cu:PSS) is applied, which is prepared by a solution process in a very transparent and simple way, which integrates easily reduced cations (Cu 2+ ) with an anionic polyelectrolyte to form an adjacent semiconductor
  • HTM Cu:PSS
  • an interfacial material capable of supporting p-doping in the layer. That is, these materials will remove electrons from the intrinsic semiconductor, leaving excess p-type carriers in the semiconductor compensated for by the excess negative charge in the adjacent polyelectrolyte layer in the interfacial layer, and will facilitate hole extraction.

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Abstract

La présente invention concerne une composition comprenant un sel métallique d'acide sulfonique de polystyrène, un dispositif à semi-conducteur et son procédé de fabrication, et plus particulièrement, une composition comprenant : un sel métallique d'acide sulfonique de polystyrène ; et un polyélectrolyte anionique, un dispositif à semi-conducteur comprenant la composition et son procédé de fabrication.
PCT/KR2021/010756 2020-12-08 2021-08-12 Composition comprenant un sel métallique d'acide sulfonique de polystyrène, dispositif à semi-conducteur et son procédé de fabrication WO2022124523A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102557855B1 (ko) * 2022-07-20 2023-07-24 한국과학기술원 액체금속 용액, 이를 포함하는 잉크 및 이를 포함하는 전자소자

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060019907A (ko) * 2004-08-30 2006-03-06 한국화학연구원 소수성 기판의 표면개질에 의한 잉크젯용 고농도 수계금속 나노 졸의 미세라인 형성방법
KR101184781B1 (ko) * 2004-02-10 2012-09-20 하.체. 스타르크 게엠베하 유기 발광 다이오드를 개선시키기 위한 폴리티오펜 배합물
KR102018978B1 (ko) * 2018-03-23 2019-09-04 중앙대학교 산학협력단 전하 전달층 및 전하 전달층의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101184781B1 (ko) * 2004-02-10 2012-09-20 하.체. 스타르크 게엠베하 유기 발광 다이오드를 개선시키기 위한 폴리티오펜 배합물
KR20060019907A (ko) * 2004-08-30 2006-03-06 한국화학연구원 소수성 기판의 표면개질에 의한 잉크젯용 고농도 수계금속 나노 졸의 미세라인 형성방법
KR102018978B1 (ko) * 2018-03-23 2019-09-04 중앙대학교 산학협력단 전하 전달층 및 전하 전달층의 제조 방법

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ALI AZMAT, AHN YOHAN, KHAWAJA KAUSAR ALI, KANG JU HWAN, PARK YU JUNG, SEO JUNG HWA, WALKER BRIGHT: "A Simple Cu(II) Polyelectrolyte as a Method to Increase the Work Function of Electrodes and Form Effective p ‐Type Contacts in Perovskite Solar Cells", ADVANCED FUNCTIONAL MATERIALS, vol. 31, no. 26, 1 June 2021 (2021-06-01), DE , pages 1 - 10, XP055942014, ISSN: 1616-301X, DOI: 10.1002/adfm.202009246 *
CHUANTIAN ZUO, LIMING DING: "Modified PEDOT Layer Makes a 1. 52 V Voc for Perovskite/PCBM Solar Cells", ADVANCED ENERGY MATERIALS, vol. 7, 1 January 2017 (2017-01-01), pages 1 - 6, XP055636674, DOI: 10.1002/aenm.201601193 *
LI WEI, WANG HUAXIN, HU XIAOFEI, CAI WENSI, ZHANG CONG, WANG MING, ZANG ZHIGANG: "Sodium Benzenesulfonate Modified Poly (3,4‐Ethylenedioxythiophene):Polystyrene Sulfonate with Improved Wettability and Work Function for Efficient and Stable Perovskite Solar Cells", SOLAR RRL, vol. 5, no. 1, 1 January 2021 (2021-01-01), pages 1 - 10, XP055942009, ISSN: 2367-198X, DOI: 10.1002/solr.202000573 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102557855B1 (ko) * 2022-07-20 2023-07-24 한국과학기술원 액체금속 용액, 이를 포함하는 잉크 및 이를 포함하는 전자소자

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