WO2012075652A1 - 发光二极管封装构造 - Google Patents

发光二极管封装构造 Download PDF

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Publication number
WO2012075652A1
WO2012075652A1 PCT/CN2010/079909 CN2010079909W WO2012075652A1 WO 2012075652 A1 WO2012075652 A1 WO 2012075652A1 CN 2010079909 W CN2010079909 W CN 2010079909W WO 2012075652 A1 WO2012075652 A1 WO 2012075652A1
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WO
WIPO (PCT)
Prior art keywords
electrode
light
electrode sheet
region
package structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2010/079909
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English (en)
French (fr)
Inventor
张光耀
郑巍巍
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Publication of WO2012075652A1 publication Critical patent/WO2012075652A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Definitions

  • the present invention relates to a light emitting diode package structure, and more particularly to an LED package structure in which the light emitting diode chip and the Zener diode are separated in different regions.
  • Liquid crystal display Display LCD
  • LCD Liquid crystal display Display
  • FPD Fluorescence Deformation
  • the liquid crystal material of the liquid crystal display cannot be self-illuminated, and the light source must be externally provided. Therefore, a backlight module is additionally provided in the liquid crystal display to provide a desired light source.
  • the backlight module can be divided into a side-in type backlight module and a direct-lit backlight module. It is known that the backlight module mainly uses a cold cathode fluorescent lamp (CCFL), a hot cathode fluorescent lamp (HCFL) and a semiconductor light emitting component as a light source, and the semiconductor light emitting component mainly uses a light emitting diode (LED) to emit light, which is compared with the cathode.
  • CCFL cold cathode fluorescent lamp
  • HCFL hot cathode fluorescent lamp
  • LED light emitting diode
  • Fluorescent tubes are more energy efficient, longer lasting, and more compact, so there is a tendency to gradually replace cathode fluorescent tubes.
  • Light-emitting diodes will be the main source of backlight for liquid crystal displays in the future.
  • the light-emitting diodes are mostly packaged in the form of chips for use as a light-emitting diode package structure, and finally joined to the fixed plate of the backlight module.
  • the type of LED package structure is classified according to the characteristics of the color of the light, the material of the grain, the brightness of the light, the size, and the like.
  • a single die generally constitutes a point source
  • a plurality of die assemblies generally constitute a surface source and a line source for information, status indication, and display.
  • the illuminating display also uses a plurality of dies, through appropriate connections of the dies (including series and Parallel) combined with a suitable optical structure to form the illumination segment and the illumination point of the illuminated display.
  • the surface-adhesive package type LED (SMD-LED) is attached to the surface of the circuit board, suitable for SMT processing, and can be reflowed, which can effectively solve the problems of brightness, viewing angle, flatness, reliability, consistency, etc., and also adopts
  • the lighter PCB and reflective layer materials have been modified to remove the heavier carbon steel material pins of the lead-in LEDs, making the reflective layer require less epoxy to fill, and the surface-attached package LEDs can be easily
  • the weight of the product is reduced by half, which ultimately makes the application more perfect. Therefore, the surface-adhesive package type LED has gradually replaced the direct-insertion type LED, and the application design is more flexible, especially in the LED display market, which has a certain share, and has an accelerated development trend.
  • FIG. 1 discloses a cross-sectional view of a conventional LED package structure.
  • a conventional LED package structure 90 includes a housing 91 , a first electrode sheet 92 , a second electrode sheet 93 , an LED chip 94 , a Zener diode 95 , and a through-through panel.
  • Light encapsulation portion 96 The top surface of the housing 91 is provided with a recess 911; a portion of the first electrode piece 92 is exposed at the bottom of the recess 911, and another portion extends outside the housing 91 for electrical use with the outside.
  • the first electrode is electrically connected to the first electrode sheet
  • the second electrode is electrically connected to the second electrode sheet 93 through a first lead 941.
  • the transparent package portion 96 is disposed. Filling the recess 911 and encapsulating the components in the recess 911, the light of the LED chip 94 can be emitted upward through the transparent package portion 96.
  • FIG. 2 is a schematic circuit diagram of the conventional LED package structure of FIG.
  • the Zener diode 95 is disposed on the housing 91, that is, on the second electrode sheet 93, and the first electrode is electrically connected at the lower end.
  • the second electrode is electrically connected to the first electrode sheet 92 via a second lead 951 at the upper end.
  • the Zener diode 95 and the LED chip 94 are in a parallel state, and the Zener diode 95 is in a reverse biased arrangement. Therefore, the Zener diode 95 can function to protect the LED chip 94 from electrostatic breakdown.
  • the Zener diode 95 is disposed above the second electrode sheet 93, that is, above the housing 91, that is, within the light-transmitting package portion 96.
  • the Zener diode 95 since the appearance of the Zener diode 95 is incapable of transmitting light and is mostly black, the Zener diode 95 has a property of blocking light and absorbing light, which may affect the portion of the LED chip 94.
  • the luminous flux reduces the luminous efficacy of the LED package structure 90.
  • the main object of the present invention is to provide an LED package structure, which is disposed in the light-emitting area and the voltage-stabilizing area of the housing by the light-emitting diode chip and the Zener diode respectively, so as to avoid the light absorption by the Zener diode.
  • the luminous flux of the LED chip thereby improving the overall luminous efficacy of the LED package construction.
  • a secondary object of the present invention is to provide an LED package structure that is electrically connected to a light-emitting area by exposing a portion of the first electrode sheet and the second electrode sheet to a portion of the light-emitting region and the voltage stabilizing region. Light-emitting diodes and Zener diodes in the voltage regulator.
  • Another object of the present invention is to provide a light emitting diode package structure for thermally connecting a light emitting diode chip to a heat sink metal sheet by exposing a heat sink metal sheet to a light emitting region to derive a light emitting diode chip. Thermal energy.
  • an LED package construction comprising:
  • the top surface is provided with a recess, the recess includes a retaining wall and the concave portion is partitioned into a light-emitting area and a voltage-stabilizing area;
  • a first electrode sheet a portion is exposed within the light-emitting region, a portion is exposed within the voltage stabilizing region, and a portion extends outside the housing;
  • a second electrode sheet a portion is exposed within the light-emitting region, a portion is exposed within the voltage stabilizing region, and a portion extends outside the housing;
  • An LED chip is disposed in the light-emitting area and is disposed on the first electrode sheet.
  • a first electrode of the LED chip is electrically connected to the first electrode sheet, and the LED chip is a second electrode is electrically connected to the second electrode sheet;
  • At least one Zener diode is disposed in the voltage stabilizing region, a second electrode of the Zener diode is electrically connected to the first electrode, and a first electrode of the Zener diode is electrically connected And the second electrode sheet.
  • the height of the retaining wall is lower than the height of an outer wall of the housing
  • the LED package structure further includes an encapsulation portion that encapsulates the illumination in the recess And protecting the first electrode sheet, the second electrode sheet and the light emitting diode chip located in the light emitting area, and covering and protecting the first electrode sheet located in the voltage stabilizing area
  • the height of the retaining wall is equal to the height of an outer wall of the housing
  • the LED package structure further includes a first encapsulating portion and a second encapsulating portion, respectively
  • the first encapsulating portion is configured to cover and protect the first electrode sheet, the second electrode sheet and the light emitting diode chip located in the light emitting area
  • the second package part is used in the light emitting area and the voltage stabilizing area
  • the first electrode sheet, the second electrode sheet and the Zener diode located in the voltage stabilizing region are protected by a coating, wherein the first encapsulating portion encapsulating the light emitting region is a light transmitting encapsulating portion.
  • the height of the retaining wall is less than or equal to the height of an outer wall of the housing.
  • the first electrode and the second electrode of the LED chip are respectively electrically connected to the first electrode piece and the second electrode piece in the light-emitting area by conductive silver glue or lead wires. Sexual connection.
  • the first electrode and the second electrode of the Zener diode respectively pass through the conductive silver paste or the lead and the second electrode piece and the first electrode piece in the voltage stabilization region. Electrical connection.
  • an LED package construction comprising:
  • the top surface is provided with a recess, the recess includes a retaining wall and the concave portion is partitioned into a light-emitting area and a voltage-stabilizing area;
  • a first electrode sheet a portion is exposed within the light-emitting region, a portion is exposed within the voltage stabilizing region, and a portion extends outside the housing;
  • a second electrode sheet a portion is exposed within the light-emitting region, a portion is exposed within the voltage stabilizing region, and a portion extends outside the housing;
  • the light emitting diode chip is disposed on the heat sink metal sheet;
  • An LED chip is disposed in the light-emitting area, a first electrode of the LED chip is electrically connected to the first electrode, and a second electrode of the LED chip is electrically connected to the Said second electrode sheet;
  • At least one Zener diode is disposed in the voltage stabilizing region, a second electrode of the Zener diode is electrically connected to the first electrode, and a first electrode of the Zener diode is electrically connected And the second electrode sheet.
  • the height of the retaining wall is lower than the height of an outer wall of the housing
  • the LED package structure further includes an encapsulation portion that encapsulates the illumination in the recess And the first voltage plate, the second electrode piece, the heat sink metal piece and the light emitting diode chip located in the light emitting area, and the cover protection layer located in the voltage regulation area
  • the height of the retaining wall is equal to the height of an outer wall of the housing
  • the LED package structure further includes a first encapsulating portion and a second encapsulating portion, respectively
  • the first encapsulating portion is configured to cover and protect the first electrode sheet, the second electrode sheet, the heat sink metal sheet and the light emitting diode chip located in the light emitting area
  • the second encapsulating portion is configured to cover the first electrode sheet, the second electrode sheet and the Zener diode located in the voltage stabilizing region, wherein the first encapsulating portion encapsulating the light emitting region is a light transmitting encapsulating portion.
  • the height of the retaining wall is less than or equal to the height of an outer wall of the housing.
  • the first electrode and the second electrode of the LED chip are respectively electrically connected to the first electrode piece and the second electrode piece in the light-emitting area by conductive silver glue or lead wires. Sexual connection.
  • the first electrode and the second electrode of the Zener diode respectively pass through the conductive silver paste or the lead and the second electrode piece and the first electrode piece in the voltage stabilization region. Electrical connection.
  • an LED package construction comprising:
  • the top surface is provided with a recess, the recess includes a retaining wall and the concave portion is partitioned into a light-emitting area and a voltage-stabilizing area;
  • a first electrode sheet a portion is exposed within the light-emitting region, a portion is exposed within the voltage stabilizing region, and a portion extends outside the housing;
  • a second electrode sheet a portion is exposed within the light-emitting region, a portion is exposed within the voltage stabilizing region, and a portion extends outside the housing;
  • An LED chip is disposed in the light-emitting area, a first electrode of the LED chip is electrically connected to the first electrode, and a second electrode of the LED chip is electrically connected to the Said second electrode sheet;
  • At least one Zener diode is disposed in the voltage stabilizing region, a second electrode of the Zener diode is electrically connected to the first electrode, and a first electrode of the Zener diode is electrically connected And the second electrode sheet.
  • the height of the retaining wall is lower than the height of an outer wall of the housing, and the LED package structure further includes an encapsulation portion that encapsulates the illumination in the recess Zone and the voltage regulation zone.
  • the height of the retaining wall is equal to the height of an outer wall of the housing, and the LED package structure further includes a first encapsulating portion and a second encapsulating portion, respectively The light emitting area and the voltage stabilizing area.
  • the height of the retaining wall is less than or equal to the height of an outer wall of the housing.
  • the first electrode and the second electrode of the LED chip are respectively electrically connected to the first electrode piece and the second electrode piece in the light-emitting area by conductive silver glue or lead wires. Sexual connection.
  • the first electrode and the second electrode of the Zener diode respectively pass through the conductive silver paste or the lead and the second electrode piece and the first electrode piece in the voltage stabilization region. Electrical connection.
  • the LED package structure of the present invention is configured by disposing the LED chip and the Zener diode in the light-emitting area and the voltage-stabilizing area of the housing, respectively, to avoid the voltage regulation
  • the diode absorbs light to affect the luminous flux of the LED chip, thereby improving the overall luminous efficacy of the LED package construction.
  • Figure 1 A cross-sectional view of a prior art LED package construction.
  • FIG. 2 is a circuit diagram of the prior art LED package construction of FIG. 1.
  • Fig. 3 is a plan view showing a light emitting diode package structure of a first embodiment of the present invention.
  • Fig. 4 is a cross-sectional view showing the structure of a light emitting diode package of a first embodiment of the present invention.
  • Fig. 5 is a plan view showing a light emitting diode package structure of a second embodiment of the present invention.
  • Figure 6 is a cross-sectional view showing a light emitting diode package structure of a second embodiment of the present invention.
  • FIG. 3 is a plan view showing a light emitting diode package structure according to a first embodiment of the present invention
  • FIG. 4 is a cross-sectional view showing the light emitting diode package structure according to the first embodiment of the present invention.
  • the LED package structure 10 of the first embodiment of the present invention comprises: a housing 11, a first electrode sheet 12, a second electrode sheet 13, an LED chip 14, and a stable The diode 15 is pressed.
  • the top surface of the housing 11 is provided with a recess 111.
  • the recess 111 is a recessed structure.
  • Figures 3 and 4 are shown in a basic form, and the specific shape can be adjusted according to product requirements.
  • the recess 111 includes a retaining wall 111a.
  • the retaining wall 111a divides the recess 111 into a light emitting area 111b and a voltage stabilizing area 111c.
  • the retaining wall 111a is inserted into the recess 111 or
  • the housing 11 is integrally formed.
  • a portion of the first electrode sheet 12 is exposed at the bottom of the light-emitting region 111b, a portion is exposed at the bottom of the voltage-stabilizing region 111c, and a portion extends outside the housing 11 for use with An external electrical connection; a portion of the second electrode sheet 13 is exposed at the bottom of the light-emitting region 111b, a portion is exposed at the bottom of the voltage-stabilizing region 111c, and a portion extends outside the housing 11 to Used for electrical connection to the outside.
  • the LED chip 14 is disposed in the light-emitting area 111b and disposed on the first electrode sheet 12.
  • the light-emitting diode 14 has a first electrode (not labeled) and a second electrode ( Not marked).
  • the first electrode is electrically connected to the first electrode sheet 12, and the second electrode is electrically connected to the second electrode sheet 13.
  • the LED chip 14 is preferably
  • the first electrode sheet 12 and the second electrode sheet 13 in the light-emitting region 111b are electrically connected to each other through a conductive silver paste or a lead.
  • a possible case of the first embodiment of the present invention is that the first electrode (not labeled) of the LED chip 14 is electrically connected to the first through a lead 141.
  • the second electrode (not shown) is electrically connected to the second electrode sheet 13 through a lead 142.
  • the present invention is not limited thereto.
  • the first electrode of the LED chip 14 may be located at the bottom and directly adhered to the first electrode sheet 12 by a conductive silver paste. Electrical connection.
  • the Zener diode 15 is disposed within the voltage stabilizing region 111c.
  • the Zener diode 15 also has a first electrode (not labeled) and a second electrode (not labeled).
  • the second electrode is electrically connected to the first electrode sheet 12, and the first electrode is electrically connected to the second electrode sheet 13.
  • the Zener diodes 15 are preferably electrically connected to the first electrode sheets 12 and the second electrode sheets 13 in the voltage stabilizing region 111c through conductive silver paste or wires, respectively.
  • the second electrode (not labeled) of the Zener diode 15 is electrically connected to the first electrode through a lead 151.
  • the first electrode (not labeled) is electrically connected to the second electrode sheet 13 via a conductive silver paste 152.
  • the present invention is not limited thereto.
  • the first electrode of the Zener diode 15 may also be electrically connected to the second electrode sheet 13 through a lead.
  • the LED package structure 10 further includes a first package portion and a second package portion (not labeled) respectively enclosed in the light emitting region 111b and the voltage stabilizing region 111c, the first package portion
  • the first electrode sheet 12, the second electrode sheet 13, and the light-emitting diode chip 14 are disposed on the light-emitting region 111b, and the second package portion is used to cover and protect the first portion located in the voltage-regulating region 111c.
  • the first package portion encapsulating the light-emitting region 111b must be a light-transmissive package portion made of a material suitable for packaging and capable of transmitting light, such as an epoxy resin, such that the light-emitting diode chip 14 can be used for light. It is emitted upward through the package portion.
  • the package portion of the present invention is not limited thereto.
  • the height of the retaining wall 111a may be lower than the height of the outer wall of the housing 11, and the light emitting diode package
  • the structure 10 only needs a package portion to package the light-emitting region 111b and the voltage-regulating region 111c at the same time.
  • the package portion in this case must also be a light-transmissive package portion.
  • the LED chip 14 needs to be provided with at least one Zener diode 15 , and the polarity configuration of the Zener diode 15 is: its second electrode (not labeled)
  • the first electrode at the lower end of the Zener diode 15 is electrically connected to the second electrode sheet 13 through a conductive silver paste 152 at the upper end and the first electrode (not shown).
  • the upper end of the Zener diode 15 passes through
  • the lead 151 is electrically connected to the first electrode sheet 12, so the Zener diode 15 is formed in parallel with the LED chip 14, and the Zener diode 15 is reverse biased.
  • the Zener diode 15 may be selected in various different forms and electrically connected to the first electrode sheet 12 or the second electrode sheet 13 by various means.
  • the Zener diode 15 may be of a type in which the first electrode and the second electrode are both at the upper end, and are electrically connected to the first electrode sheet 12 and the second through leads. Electrode sheet 13.
  • the light emitting diode package structure 10 of the present invention since the light emitting diode chip 14 and the Zener diode 15 are separated by the baffle 111a in different regions (the light emitting region 111b and the The voltage stabilizing area 111c), regardless of whether the height of the retaining wall 111a is equal to the height of the outer wall of the casing 11 (the light emitting area 111b and the voltage stabilizing area 111c are completely or incompletely described)
  • the retaining walls 111a are spaced apart).
  • the baffle 111a functions as a function of isolating the Zener diode 15 with respect to the LED chip 14, which avoids the light flux of the LED chip 14 being affected by the Zener diode 15 absorbing light. Thereby, the luminous efficacy of the overall LED package construction 10 is improved.
  • the present invention does not specify the polarity represented by the first electrode, the second electrode, the first electrode sheet 12, and the second electrode sheet 13, in a normal case, the first One electrode may refer to the anode (positive electrode) and the second electrode may refer to the cathode (negative electrode), but it is also possible to have a permutation combination of all polarity corresponding conditions.
  • the LED package structure 10 disclosed in the first embodiment of the present invention is provided with one Zener diode 15, the present invention does not limit the number of the Zener diodes 15, and the user can actually A plurality of the Zener diodes 15 need to be provided.
  • FIG. 5 is a plan view showing a light emitting diode package structure according to a second embodiment of the present invention.
  • FIG. 6 is a cross-sectional view showing a light emitting diode package structure according to a second embodiment of the present invention.
  • the LED package structure 10 of the second embodiment of the present invention is similar to the LED package structure 10 of the first embodiment of the present invention, so the same component symbols and names are used, but the differences are the same.
  • the LED package structure 10 of the second embodiment of the present invention further includes a heat sink metal sheet 16 partially exposed within the light emitting region 111b and partially extending outside the housing 11. And the LED chip 14 is disposed on the heat sink metal sheet 16.
  • the LED chip 14 is electrically connected to the first electrode sheet 12 and the second electrode sheet 13 through the lead 141 and the lead 142. Since the bottom surface of the LED chip 14 is attached to the heat sink metal sheet 16 and a portion of the heat sink metal sheet 16 extends to the outside of the housing 11, the LED chip 14 is generated. Thermal energy can be drawn out of the exterior of the LED package structure 10 through the heat sink metal sheet 16 to form an electrothermally separated version.
  • the height of the retaining wall 111a is lower than the height of the outer wall of the housing 11, and the LED package structure 10 includes a package portion and simultaneously encapsulates the light emitting region.
  • 111b and the voltage stabilizing region 111c for protecting the first electrode sheet 12, the second electrode sheet 13, the heat sink metal sheet 16, and the light emitting diode chip 14 located in the light emitting region 111b, and the cladding protection is located at the The first electrode sheet 12, the second electrode sheet 13, and the Zener diode 15 of the voltage stabilizing region 111c, and the package portion is a light-transmitting package portion.
  • the height of the retaining wall 111a may be equal to the height of the outer wall of the casing 11.
  • the LED package structure further includes a first encapsulating portion (not labeled) and a a second encapsulation portion (not shown) is respectively packaged in the light-emitting region 111b and the voltage stabilization region 111c, and the first package portion is configured to cover and protect the first electrode sheet 12 located in the light-emitting region.
  • the first package portion is a light-transmissive package portion.
  • FIG. 3 and FIG. 4 of the present invention disclose the arrangement of the first electrode sheet 12 and the second electrode sheet 13, and FIG. 5 and FIG. 6 of the present invention disclose another The arrangement of the first electrode sheet 12, the second electrode sheet 13, and the heat sink metal sheet 16 is described.
  • the present invention is not limited thereto, and the user may design the configuration pattern of the first electrode sheet 12, the second electrode sheet 13, and the heat sink metal sheet 16 according to actual needs, and match the light emitting diode chip 14 And a combination of various possible situations in which the Zener diode 15 is disposed on the first electrode sheet 12, the second electrode sheet 13, or the heat sink metal sheet 16.
  • the Zener diode of the existing LED package structure is disposed above the casing, which affects part of the luminous flux of the LED chip, thereby reducing the luminous efficacy of the LED package structure.
  • the recessed portion 111 of the LED package structure 10 of the present invention includes a barrier wall 111a for partitioning into a light-emitting region 111b and a voltage stabilizing region 111c, and the LED chip 14 and the Zener diode 15 are The partitions are disposed in different regions to avoid the light flux of the LED chip 14 being affected by the Zener diode 15 absorbing light, thereby improving the overall luminous efficacy of the LED package structure 10.

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Description

发光二极管封装构造 技术领域
本发明涉及一种发光二极管封装构造，特别是涉及一种将所述发光二极管芯片及所述稳压二极管分隔设在不同区域的发光二极管封装构造。
背景技术
液晶显示器(liquid crystal display，LCD)是利用液晶材料的特性来显示图像的一种平板显示装置(flat panel display，FPD)，其相较于其他显示装置而言更具轻薄、低驱动电压及低功耗等优点，已经成为整个消费市场上的主流产品。然而，液晶显示器的液晶材料无法自主发光，必须借助外在提供光源，因此液晶显示器中又另外设有背光模块以提供所需的光源。
一般而言，背光模块可分为侧入式背光模块和直下式背光模块两种形式。已知背光模块主要是以冷阴极荧光灯管（CCFL）、热阴极荧光灯管（HCFL）及半导体发光组件作为光源，而半导体发光组件主要又是利用发光二极管（LED）进行发光，其相较于阴极荧光灯管更为省电节能、使用寿命更长，且体积更为轻巧，因而有逐渐取代阴极荧光灯管的趋势，发光二极管将是液晶显示器的背光模块未来的主要光源。
现今，发光二极管多以芯片的形式进行半导体封装，以作为发光二极管封装构造，最后再与背光模块的固定板接合。发光二极管产品封装构造的类型，有根据发光颜色、晶粒材料、发光亮度、尺寸大小等情况特征来分类的。单个晶粒一般构成点光源，多个晶粒组装一般可构成面光源和线光源，作信息、状态指示及显示用，发光显示器也是用多个晶粒，通过晶粒的适当连接(包括串联和并联)与合适的光学结构组合而成的，构成发光显示器的发光段和发光点。其中，表面粘着封装型的LED(SMD-LED)是贴于电路板表面，适合SMT加工，可回流焊，可有效解决亮度、视角、平整度、可靠性、一致性等问题，其也采用了更轻的PCB板和反射层材料，改进后去掉了直插引脚式LED较重的碳钢材料引脚，使显示反射层需要填充的环氧树脂更少，表面粘着封装LED可轻易地将产品重量减轻一半，最终使应用更加完美。因此，表面粘着封装型的LED已逐渐替代直插引脚式LED，应用设计更灵活，特别是在LED显示市场中占有一定的份额，有加速发展趋势。
请参照图1所示，图1揭示一种现有发光二极管封装构造的剖视图。如图1所示，一种现有发光二极管封装构造90包含：一壳体91、一第一电极片92、一第二电极片93、一发光二极管芯片94、一稳压二极管95及一透光封装部96。所述壳体91的顶面设有一凹部911；所述第一电极片92的一部分裸露于所述凹部911的底部，另一部分延伸至所述壳体91外，以使用于与外部的电性连接；所述第二电极片93的一部分裸露于所述凹部911的底部，另一部分延伸至所述壳体91外，以使用于与外部的电性连接；所述发光二极管芯片94裸露于所述凹部911之内，其第一电极电性连接于所述第一电极片上，其第二电极通过一第一引线941电性连接于所述第二电极片93；所述透光封装部96，填补于所述凹部911并且封装所述凹部911内之各组件，所述发光二极管芯片94的光线能通过所述透光封装部96向上方发射。
然而，在现有的所述发光二极管封装构造90中，为了使所述发光二极管芯片94避免由于静电而被击穿，往往会并联一个或一组所述稳压二极管95来解决这样的问题。请同时参照图1及图2所示，其中图2是图1的现有发光二极管封装构造的电路示意图。在所述发光二极管封装构造90中，所述稳压二极管95是设于所述壳体91之上，亦即设于所述第二电极片93之上，其第一电极位于下端电性连接于所述第二电极片93上，其第二电极位于上端通过一第二引线951电性连接于所述第一电极片92。也就是说，所述稳压二极管95与所述发光二极管芯片94是形成并联的状态，且所述稳压二极管95是呈反向偏压的设置。因此，所述稳压二极管95可以起到保护所述发光二极管芯片94避免被静电击穿的功用。但是，所述稳压二极管95是设置于所述第二电极片93的上方，即位于所述壳体91的上方，也就是位于所述透光封装部96之内。并且，由于所述稳压二极管95的外观是无法透光且多呈现黑色的，因此，所述稳压二极管95因具有挡光及吸光的性质，会引影响到所述发光二极管芯片94的部分光通量，降低所述发光二极管封装构造90的发光效能。
故，有必要提供一种发光二极管封装构造，以解决现有技术所存在的问题。
 技术问题
本发明的主要目的是提供一种发光二极管封装构造，其通过将发光二极管芯片及稳压二极管分别设置于壳体的发光区及稳压区之内，以避免因稳压二极管吸收光线而影响到发光二极管芯片的光通量，从而提高了发光二极管封装构造的整体发光效能。
本发明的次要目的是提供一种发光二极管封装构造，其通过将第一电极片及第二电极片都有一部分裸露于发光区及稳压区之内，以电性连接于位于发光区的的发光二极管以及位于稳压区的稳压二极管。
本发明的另一目的是提供一种发光二极管封装构造，其通过将热沉金属片裸露于发光区内，以将发光二极管芯片热性连接于热沉金属片上，以导出发光二极管芯片所产生的热能。
 技术解决方案
为达上述目的，本发明提供一种发光二极管封装构造，其包含：
一壳体，顶面设有一凹部，所述凹部内包含一挡墙并将所述凹部分隔为一发光区及一稳压区；
一第一电极片，一部分裸露于所述发光区之内，一部分裸露于所述稳压区之内，及一部分延伸至所述壳体外；
一第二电极片，一部分裸露于所述发光区之内，一部分裸露于所述稳压区之内，及一部分延伸至所述壳体外；
一发光二极管芯片，设于所述发光区之内，并设于所述第一电极片上，所述发光二极管芯片的一第一电极电性连接于所述第一电极片，所述发光二极管芯片的一第二电极电性连接于所述第二电极片；及
至少一稳压二极管，设于所述稳压区之内，所述稳压二极管的一第二电极电性连接于所述第一电极片，所述稳压二极管的一第一电极电性连接于所述第二电极片。
在本发明的一实施例中，所述挡墙的高度低于所述壳体的一外墙的高度，所述发光二极管封装构造还包含一封装部，其封装在所述凹部的所述发光区及所述稳压区内，以包覆保护位于所述发光区的第一电极片、第二电极片及发光二极管芯片，以及包覆保护位于所述稳压区的第一电极片、第二电极片及稳压二极管，其中所述封装部为一透光封装部。
在本发明的一实施例中，所述挡墙的高度等于所述壳体的一外墙的高度，所述发光二极管封装构造还包含一第一封装部及一第二封装部，分别封装在所述发光区及所述稳压区内，所述第一封装部用以包覆保护位于所述发光区的第一电极片、第二电极片及发光二极管芯片，所述第二封装部用以包覆保护位于所述稳压区的第一电极片、第二电极片及稳压二极管，其中封装所述发光区的所述第一封装部为一透光封装部。
在本发明的一实施例中，所述挡墙的高度小于或等于所述壳体的一外墙的高度。
在本发明的一实施例中，所述发光二极管芯片的第一电极及第二电极分别通过导电银胶或引线与所述发光区内的所述第一电极片及所述第二电极片电性连接。
在本发明的一实施例中，所述稳压二极管的第一电极及第二电极分别通过导电银胶或引线与所述稳压区内的所述第二电极片及所述第一电极片电性连接。
为达上述另一目的，本发明提供一种发光二极管封装构造，其包含：
一壳体，顶面设有一凹部，所述凹部内包含一挡墙并将所述凹部分隔为一发光区及一稳压区；
一第一电极片，一部分裸露于所述发光区之内，一部分裸露于所述稳压区之内，及一部分延伸至所述壳体外；
一第二电极片，一部分裸露于所述发光区之内，一部分裸露于所述稳压区之内，及一部分延伸至所述壳体外；
一热沉金属片，一部分裸露于所述发光区之内，及一部份延伸至所述壳体外，所述发光二极管芯片设置于所述热沉金属片上；
一发光二极管芯片，设于所述发光区之内，所述发光二极管芯片的一第一电极电性连接于所述第一电极片，所述发光二极管芯片的一第二电极电性连接于所述第二电极片；及
至少一稳压二极管，设于所述稳压区之内，所述稳压二极管的一第二电极电性连接于所述第一电极片，所述稳压二极管的一第一电极电性连接于所述第二电极片。
在本发明的一实施例中，所述挡墙的高度低于所述壳体的一外墙的高度，所述发光二极管封装构造还包含一封装部，其封装在所述凹部的所述发光区及所述稳压区内，以包覆保护位于所述发光区的第一电极片、第二电极片、热沉金属片及发光二极管芯片，以及包覆保护位于所述稳压区的第一电极片、第二电极片及稳压二极管，其中所述封装部为一透光封装部。
在本发明的一实施例中，所述挡墙的高度等于所述壳体的一外墙的高度，所述发光二极管封装构造还包含一第一封装部及一第二封装部，分别封装在所述发光区及所述稳压区内，所述第一封装部用以包覆保护位于所述发光区的第一电极片、第二电极片、热沉金属片及发光二极管芯片，所述第二封装部用以包覆保护位于所述稳压区的第一电极片、第二电极片及稳压二极管，其中封装所述发光区的所述第一封装部为一透光封装部。
在本发明的一实施例中，所述挡墙的高度小于或等于所述壳体的一外墙的高度。
在本发明的一实施例中，所述发光二极管芯片的第一电极及第二电极分别通过导电银胶或引线与所述发光区内的所述第一电极片及所述第二电极片电性连接。
在本发明的一实施例中，所述稳压二极管的第一电极及第二电极分别通过导电银胶或引线与所述稳压区内的所述第二电极片及所述第一电极片电性连接。
为达上述再一目的，本发明提供一种发光二极管封装构造，其包含：
一壳体，顶面设有一凹部，所述凹部内包含一挡墙并将所述凹部分隔为一发光区及一稳压区；
一第一电极片，一部分裸露于所述发光区之内，一部分裸露于所述稳压区之内，及一部分延伸至所述壳体外；
一第二电极片，一部分裸露于所述发光区之内，一部分裸露于所述稳压区之内，及一部分延伸至所述壳体外；
一发光二极管芯片，设于所述发光区之内，所述发光二极管芯片的一第一电极电性连接于所述第一电极片，所述发光二极管芯片的一第二电极电性连接于所述第二电极片；及
至少一稳压二极管，设于所述稳压区之内，所述稳压二极管的一第二电极电性连接于所述第一电极片，所述稳压二极管的一第一电极电性连接于所述第二电极片。
在本发明的一实施例中，所述挡墙的高度低于所述壳体的一外墙的高度，所述发光二极管封装构造还包含一封装部，其封装在所述凹部的所述发光区及所述稳压区内。
在本发明的一实施例中，所述挡墙的高度等于所述壳体的一外墙的高度，所述发光二极管封装构造还包含一第一封装部及一第二封装部，分别封装在所述发光区及所述稳压区内。
在本发明的一实施例中，所述挡墙的高度小于或等于所述壳体的一外墙的高度。
在本发明的一实施例中，所述发光二极管芯片的第一电极及第二电极分别通过导电银胶或引线与所述发光区内的所述第一电极片及所述第二电极片电性连接。
在本发明的一实施例中，所述稳压二极管的第一电极及第二电极分别通过导电银胶或引线与所述稳压区内的所述第二电极片及所述第一电极片电性连接。
 有益效果
本发明的所述发光二极管封装构造通过将所述发光二极管芯片及所述稳压二极管分别设置于所述壳体的所述发光区及所述稳压区之内，以避免因所述稳压二极管吸收光线而影响到所述发光二极管芯片的光通量，从而提高了所述发光二极管封装构造的整体发光效能。
 附图说明
图1：一种现有发光二极管封装构造的剖视图。
图2：图1的现有发光二极管封装构造的电路示意图。
图3：本发明第一实施例的发光二极管封装构造的俯视图。
图4：本发明第一实施例的发光二极管封装构造的剖视图。
图5：本发明第二实施例的发光二极管封装构造的俯视图。
图6：本发明第二实施例的发光二极管封装构造的剖视图。
 本发明的最佳实施方式
为让本发明上述目的、特征及优点更明显易懂，下文特举本发明较佳实施例，并配合附图，作详细说明如下：
请同时参照图3及图4所示，图3揭示本发明第一实施例的发光二极管封装构造的俯视图；图4揭示本发明第一实施例的发光二极管封装构造的剖视图。如图3及图4所示，本发明第一实施例的发光二极管封装构造10包含：一壳体11、一第一电极片12、一第二电极片13、一发光二极管芯片14及一稳压二极管15。所述壳体11的顶面设有一凹部111，所述凹部111是一凹陷构造，图3及图4是以一种基本的形态来表示，其具体形状可依产品需求而调整。所述凹部111内包含一挡墙111a，所述挡墙111a将所述凹部111分为一发光区111b及一稳压区111c，所述挡墙111a是插设于所述凹部111或与所述壳体11一体成型而成。
再者，所述第一电极片12的一部分裸露于所述发光区111b的底部，一部分裸露于所述稳压区111c的底部，及有一部分延伸至所述壳体11外，以用于与外部的电性连接；所述第二电极片13的一部分裸露于所述发光区111b的底部，一部分裸露于所述稳压区111c的底部，及有一部分延伸至所述壳体11外，以用于与外部的电性连接。
另外，所述发光二极管芯片14设于所述发光区111b之内，且设于所述第一电极片12上，所述发光二极管14具有一第一电极(未标示)及一第二电极(未标示)。所述第一电极电性连接于所述第一电极片12上，所述第二电极电性连接于所述第二电极片13上；在本实施例中，所述发光二极管芯片14优选是分别通过导电银胶或引线电性连接于所述发光区111b内的所述第一电极片12及所述第二电极片13。如图3及图4所示，本发明第一实施例的一个可能的情况是：所述发光二极管芯片14的所述第一电极(未标示)通过一引线141电性连接于所述第一电极片12上，所述第二电极(未标示)通过一引线142电性连接于所述第二电极片13上。但本发明并不限于此，例如，在另一可能的实施例中，所述发光二极管芯片14的第一电极可能位于底部，并通过导电银胶与所述第一电极片12直接贴合且电性连接。
再者，所述稳压二极管15是设于所述稳压区111c之内，所述稳压二极管15也具有一第一电极(未标示)及一第二电极(未标示)。所述第二电极电性连接于所述第一电极片12上，所述第一电极电性连接于所述第二电极片13上。所述稳压二极管15优选是分别通过导电银胶或引线电性连接于所述稳压区111c内的所述第一电极片12及所述第二电极片13。如图3及图4所示，本发明第一实施例的一个可能的情况是：所述稳压二极管15的所述第二电极(未标示)通过通过一引线151电性连接于所述第一电极片12上，所述第一电极(未标示)通过一导电银胶152电性连接于所述第二电极片13上。但本发明并不限于此，在另一可能的实施例中，所述稳压二极管15的所述第一电极也可能通过引线与所述第二电极片13电性连接。
如图4所示，所述挡墙111a的高度与所述壳体11的一外墙的高度相等，所述发光区111b及所述稳压区111c是完全的被所述挡墙111a隔开。因此所述发光二极管封装构造10另包含一第一封装部及一第二封装部(未标示)，其分别封装在所述发光区111b及所述稳压区111c内，所述第一封装部用以包覆保护位于所述发光区111b的第一电极片12、第二电极片13及发光二极管芯片14，所述第二封装部用以包覆保护位于所述稳压区111c的第一电极片12、第二电极片13及稳压二极管15。其中封装所述发光区111b的所述第一封装部必须为一透光封装部，其材质为适用于封装并且能透光的材质，例如环氧树脂，这样所述发光二极管芯片14的光线才能通过所述封装部向上方发射。
然而，本发明的所述封装部并不限于此，再另一可能的实施例中，所述挡墙111a的高度可能低于所述壳体11的外墙的高度，而所述发光二极管封装构造10只需要一封装部即可同时封装所述发光区111b及所述稳压区111c，当然在此状况下的所述封装部也必须为一透光封装部。
另外，所述发光二极管芯片14为了避免由于静电而被击穿，因此需要设置至少一所述稳压二极管15，并且所述稳压二极管15的极性配置是：其第二电极(未标示)在上端及第一电极(未标示)在下端，所述稳压二极管15的下端第一电极通过导电银胶152电性连接于所述第二电极片13，所述稳压二极管15的上端通过引线151电性连接于所述第一电极片12，因此所述稳压二极管15与所述发光二极管芯片14形成并联，且所述稳压二极管15是反向偏压。然而本发明并不限于此，所述稳压二极管15可选择各种不同的型式，并通过各种方式来电性连接于所述第一电极片12或所述第二电极片13。在一可能的实施例中，所述稳压二极管15可以是第一电极及第二电极都在上端的型式，并且都通过引线以电性连接至所述第一电极片12及所述第二电极片13。
综上所述，在本发明的发光二极管封装构造10中，由于所述发光二极管芯片14与所述稳压二极管15是被所述挡板111a分隔在不同的区域(所述发光区111b及所述稳压区111c)，不论所述挡墙111a的高度与所述壳体11的外墙的高度是否相等(所述发光区111b及所述稳压区111c是完全或不完全的被所述挡墙111a隔开)。相对于所述发光二极管芯片14，所述挡板111a都能起到隔离所述稳压二极管15的功能，其避免因所述稳压二极管15吸收光线而影响到所述发光二极管芯片14的光通量，从而提高了整体发光二极管封装构造10的发光效能。
另外，本发明并不指定所述第一电极、所述第二电极、所述第一电极片12及所述第二电极片13所代表的极性，在一通常的情况下，所述第一电极可能是指阳极(正极)，而所述第二电极可能是指阴极(负极)，但也有可能是所有极性对应状况的排列组合。并且，虽然本发明第一实施例所揭示的所述发光二极管封装构造10设有一个所述稳压二极管15，然而，本发明并不限制所述稳压二极管15的数量，使用者可依实际需要设置多个所述稳压二极管15。
请再参照图5及图6所示，图5揭示本发明第二实施例的发光二极管封装构造的俯视图；图6揭示本发明第二实施例的发光二极管封装构造的剖视图。如图5及图6所示，本发明第二实施例的发光二极管封装构造10相似于本发明第一实施例的发光二极管封装构造10，因此沿用相同的组件符号与名称，但其不同之处在于：本发明第二实施例的发光二极管封装构造10另包含一热沉金属片16，所述热沉金属片16一部分裸露于所述发光区111b之内，一部分延伸至所述壳体11外，并且所述发光二极管芯片14是设于所述热沉金属片16上。所述发光二极管芯片14通过所述引线141及所述引线142电性连接所述第一电极片12及所述第二电极片13。由于所述发光二极管芯片14的底面是贴设于所述热沉金属片16上，并且所述热沉金属片16有一部分延伸至所述壳体11外部，因此所述发光二极管芯片14产生的热能可通过所述热沉金属片16被导出所述发光二极管封装构造10的外部，形成一种电热分离的型式。
另外，在本发明第二实施例中，所述挡墙111a的高度是低于所述壳体11的外墙的高度，而所述发光二极管封装构造10包含一封装部同时封装所述发光区111b及所述稳压区111c，以包覆保护位于所述发光区111b的第一电极片12、第二电极片13、热沉金属片16及发光二极管芯片14，以及包覆保护位于所述稳压区111c的第一电极片12、第二电极片13及稳压二极管15，并且所述封装部为一透光封装部。
在本发明第二实施例中，所述挡墙111a的高度亦可以与所述壳体11的外墙的高度相等，所述发光二极管封装构造还包含一第一封装部（未标示）及一第二封装部（未标示），分别封装在所述发光区111b及所述稳压区111c内，所述第一封装部用以包覆保护位于所述发光区的第一电极片12、第二电极片13、热沉金属片16及发光二极管芯片14，所述第二封装部用以包覆保护位于所述稳压区111c的第一电极片12、第二电极片13及稳压二极管15，所述第一封装部为一透光封装部。
再者，虽然本发明的图3及图4揭示了一种所述第一电极片12及所述第二电极片13的配置情形；以及本发明的图5及图6揭示了另一种所述第一电极片12、所述第二电极片13及所述热沉金属片16的配置情形。然而本发明并不限于此，使用者可依照实际需求设计所述第一电极片12、所述第二电极片13及所述热沉金属片16的配置型式，并且搭配所述发光二极管芯片14及所述稳压二极管15配置于所述第一电极片12、所述第二电极片13或所述热沉金属片16上的各种可能情况的排列组合。
综上所述，相较于现有的发光二极管封装构造的稳压二极管是设置于壳体的上方，其影响到发光二极管芯片的部分光通量，因而降低所述发光二极管封装构造的发光效能。本发明的所述发光二极管封装构造10的所述凹部111内包含一挡墙111a以分隔为一发光区111b及一稳压区111c，并将所述发光二极管芯片14及所述稳压二极管15分隔设置在不同的区域，以避免因所述稳压二极管15吸收光线而影响到所述发光二极管芯片14的光通量，从而提高了所述发光二极管封装构造10的整体发光效能。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。
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  1. 一种发光二极管封装构造，其特征在于：所述发光二极管封装构造包含：
    一壳体，顶面设有一凹部，所述凹部内包含一挡墙并将所述凹部分隔为一发光区及一稳压区；
    一第一电极片，一部分裸露于所述发光区之内，一部分裸露于所述稳压区之内，及一部分延伸至所述壳体外；
    一第二电极片，一部分裸露于所述发光区之内，一部分裸露于所述稳压区之内，及一部分延伸至所述壳体外；
    一发光二极管芯片，设于所述发光区之内，并设于所述第一电极片上，所述发光二极管芯片的一第一电极电性连接于所述第一电极片，所述发光二极管芯片的一第二电极电性连接于所述第二电极片；及
    至少一稳压二极管，设于所述稳压区之内，所述稳压二极管的一第二电极电性连接于所述第一电极片，所述稳压二极管的一第一电极电性连接于所述第二电极片。
  2. 如权利要求1所述的发光二极管封装构造，其特征在于：所述挡墙的高度低于所述壳体的一外墙的高度，所述发光二极管封装构造还包含一封装部，其封装在所述凹部的所述发光区及所述稳压区内，以包覆保护位于所述发光区的第一电极片、第二电极片及发光二极管芯片，以及包覆保护位于所述稳压区的第一电极片、第二电极片及稳压二极管，其中所述封装部为一透光封装部。
  3. 如权利要求1所述的发光二极管封装构造，其特征在于：所述挡墙的高度等于所述壳体的一外墙的高度，所述发光二极管封装构造还包含一第一封装部及一第二封装部，分别封装在所述发光区及所述稳压区内，所述第一封装部用以包覆保护位于所述发光区的第一电极片、第二电极片及发光二极管芯片，所述第二封装部用以包覆保护位于所述稳压区的第一电极片、第二电极片及稳压二极管，其中封装所述发光区的所述第一封装部为一透光封装部。
  4. 如权利要求1所述的发光二极管封装构造，其特征在于：所述挡墙的高度小于或等于所述壳体的一外墙的高度。
  5. 如权利要求1所述的发光二极管封装构造，其特征在于：所述发光二极管芯片的第一电极及第二电极分别通过导电银胶或引线与所述发光区内的所述第一电极片及所述第二电极片电性连接。
  6. 如权利要求1所述的发光二极管封装构造，其特征在于：所述稳压二极管的第一电极及第二电极分别通过导电银胶或引线与所述稳压区内的所述第二电极片及所述第一电极片电性连接。
  7. 一种发光二极管封装构造，其特征在于：所述发光二极管封装构造包含：
    一壳体，顶面设有一凹部，所述凹部内包含一挡墙并将所述凹部分隔为一发光区及一稳压区；
    一第一电极片，一部分裸露于所述发光区之内，一部分裸露于所述稳压区之内，及一部分延伸至所述壳体外；
    一第二电极片，一部分裸露于所述发光区之内，一部分裸露于所述稳压区之内，及一部分延伸至所述壳体外；
    一热沉金属片，一部分裸露于所述发光区之内，及一部份延伸至所述壳体外，所述发光二极管芯片设置于所述热沉金属片上；
    一发光二极管芯片，设于所述发光区之内，所述发光二极管芯片的一第一电极电性连接于所述第一电极片，所述发光二极管芯片的一第二电极电性连接于所述第二电极片；及
    至少一稳压二极管，设于所述稳压区之内，所述稳压二极管的一第二电极电性连接于所述第一电极片，所述稳压二极管的一第一电极电性连接于所述第二电极片。
  8. 如权利要求7所述的发光二极管封装构造，其特征在于：所述挡墙的高度低于所述壳体的一外墙的高度，所述发光二极管封装构造还包含一封装部，其封装在所述凹部的所述发光区及所述稳压区内，以包覆保护位于所述发光区的第一电极片、第二电极片、热沉金属片及发光二极管芯片，以及包覆保护位于所述稳压区的第一电极片、第二电极片及稳压二极管，其中所述封装部为一透光封装部。
  9. 如权利要求7所述的发光二极管封装构造，其特征在于：所述挡墙的高度等于所述壳体的一外墙的高度，所述发光二极管封装构造还包含一第一封装部及一第二封装部，分别封装在所述发光区及所述稳压区内，所述第一封装部用以包覆保护位于所述发光区的第一电极片、第二电极片、热沉金属片及发光二极管芯片，所述第二封装部用以包覆保护位于所述稳压区的第一电极片、第二电极片及稳压二极管，其中封装所述发光区的所述第一封装部为一透光封装部。
  10. 如权利要求7所述的发光二极管封装构造，其特征在于：所述挡墙的高度小于或等于所述壳体的一外墙的高度。
  11. 如权利要求7所述的发光二极管封装构造，其特征在于：所述发光二极管芯片的第一电极及第二电极分别通过导电银胶或引线与所述发光区内的所述第一电极片及所述第二电极片电性连接。
  12. 如权利要求7所述的发光二极管封装构造，其特征在于：所述稳压二极管的第一电极及第二电极分别通过导电银胶或引线与所述稳压区内的所述第二电极片及所述第一电极片电性连接。
  13. 一种发光二极管封装构造，其特征在于：所述发光二极管封装构造包含：
    一壳体，顶面设有一凹部，所述凹部内包含一挡墙并将所述凹部分隔为一发光区及一稳压区；
    一第一电极片，一部分裸露于所述发光区之内，一部分裸露于所述稳压区之内，及一部分延伸至所述壳体外；
    一第二电极片，一部分裸露于所述发光区之内，一部分裸露于所述稳压区之内，及一部分延伸至所述壳体外；
    一发光二极管芯片，设于所述发光区之内，所述发光二极管芯片的一第一电极电性连接于所述第一电极片，所述发光二极管芯片的一第二电极电性连接于所述第二电极片；及
    至少一稳压二极管，设于所述稳压区之内，所述稳压二极管的一第二电极电性连接于所述第一电极片，所述稳压二极管的一第一电极电性连接于所述第二电极片。
  14. 如权利要求13所述的发光二极管封装构造，其特征在于：所述挡墙的高度低于所述壳体的一外墙的高度，所述发光二极管封装构造还包含一封装部，其封装在所述凹部的所述发光区及所述稳压区内。
  15. 如权利要求13所述的发光二极管封装构造，其特征在于：所述挡墙的高度等于所述壳体的一外墙的高度，所述发光二极管封装构造还包含一第一封装部及一第二封装部，分别封装在所述发光区及所述稳压区内。
  16. 如权利要求13所述的发光二极管封装构造，其特征在于：所述挡墙的高度小于或等于所述壳体的一外墙的高度。
  17. 如权利要求13所述的发光二极管封装构造，其特征在于：所述发光二极管芯片的第一电极及第二电极分别通过导电银胶或引线与所述发光区内的所述第一电极片及所述第二电极片电性连接。
  18. 如权利要求13所述的发光二极管封装构造，其特征在于：所述稳压二极管的第一电极及第二电极分别通过导电银胶或引线与所述稳压区内的所述第二电极片及所述第一电极片电性连接。
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DE102012101560B4 (de) * 2011-10-27 2016-02-04 Epcos Ag Leuchtdiodenvorrichtung
JP2013179271A (ja) * 2012-01-31 2013-09-09 Rohm Co Ltd 発光装置および発光装置の製造方法
CN102779793A (zh) * 2012-07-17 2012-11-14 明基电通有限公司 电子元件封装结构、电子装置及其制造方法
CN103582282B (zh) * 2012-07-25 2018-05-18 欧司朗股份有限公司 电路板、包括该电路板的电子模块和发光模块
TWI602322B (zh) * 2013-06-27 2017-10-11 晶元光電股份有限公司 發光二極體組件及製作方法
CN104716246B (zh) * 2013-12-17 2017-09-26 展晶科技(深圳)有限公司 光电元件封装结构及其制造方法
KR102034715B1 (ko) 2015-07-16 2019-10-22 엘지이노텍 주식회사 발광 소자 패키지
JP6862141B2 (ja) 2015-10-14 2021-04-21 エルジー イノテック カンパニー リミテッド 発光素子パッケージ及び照明装置
CN106887507B (zh) * 2015-10-30 2020-09-22 日亚化学工业株式会社 发光装置及其制造方法
CN107181165A (zh) * 2017-06-24 2017-09-19 中国电子科技集团公司第五十八研究所 圆片级激光器封装结构及制造方法
CN108767093B (zh) * 2018-08-15 2024-03-19 张辉 一种镜像发光结构的led smd发光管
JP7407177B2 (ja) * 2019-04-26 2023-12-28 ローム株式会社 半導体発光装置
CN112037674B (zh) * 2020-09-22 2022-09-06 京东方科技集团股份有限公司 面光源及其制备方法和显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060045021A (ko) * 2004-09-10 2006-05-16 윤성노 소형 광소자 패키지 및 그 제조방법
JP2008085296A (ja) * 2006-09-01 2008-04-10 Nichia Chem Ind Ltd 発光装置
CN201421850Y (zh) * 2009-03-26 2010-03-10 一诠精密工业股份有限公司 发光二极管结构
CN201655839U (zh) * 2010-01-29 2010-11-24 东贝光电科技股份有限公司 发光二极管改良结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100632002B1 (ko) * 2005-08-02 2006-10-09 삼성전기주식회사 보호 소자를 포함하는 측면형 발광 다이오드
US7687823B2 (en) * 2006-12-26 2010-03-30 Nichia Corporation Light-emitting apparatus and method of producing the same
KR100811723B1 (ko) * 2007-03-30 2008-03-11 서울반도체 주식회사 Ｌｅｄ 패키지
CN101325193B (zh) * 2007-06-13 2010-06-09 先进开发光电股份有限公司 发光二极管封装体
CN201259892Y (zh) * 2008-08-14 2009-06-17 宏齐科技股份有限公司 具有内埋式静电防护功能的发光二极管芯片封装结构
CN101771031B (zh) * 2008-12-29 2011-09-07 展晶科技(深圳)有限公司 具有静电保护的光电元件的封装结构
US9627361B2 (en) * 2010-10-07 2017-04-18 Cree, Inc. Multiple configuration light emitting devices and methods

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060045021A (ko) * 2004-09-10 2006-05-16 윤성노 소형 광소자 패키지 및 그 제조방법
JP2008085296A (ja) * 2006-09-01 2008-04-10 Nichia Chem Ind Ltd 発光装置
CN201421850Y (zh) * 2009-03-26 2010-03-10 一诠精密工业股份有限公司 发光二极管结构
CN201655839U (zh) * 2010-01-29 2010-11-24 东贝光电科技股份有限公司 发光二极管改良结构

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