WO2012060619A3 - 반도체 소자 및 그 제조 방법 - Google Patents

반도체 소자 및 그 제조 방법 Download PDF

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Publication number
WO2012060619A3
WO2012060619A3 PCT/KR2011/008275 KR2011008275W WO2012060619A3 WO 2012060619 A3 WO2012060619 A3 WO 2012060619A3 KR 2011008275 W KR2011008275 W KR 2011008275W WO 2012060619 A3 WO2012060619 A3 WO 2012060619A3
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WO
WIPO (PCT)
Prior art keywords
semiconductor
semiconductor device
manufacturing
layer
semiconductor layer
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Application number
PCT/KR2011/008275
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English (en)
French (fr)
Other versions
WO2012060619A2 (ko
Inventor
박무근
유명철
오세종
Original Assignee
(주)버티클
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by (주)버티클 filed Critical (주)버티클
Priority to JP2013537604A priority Critical patent/JP2013541855A/ja
Priority to EP11838224.1A priority patent/EP2637222A4/en
Publication of WO2012060619A2 publication Critical patent/WO2012060619A2/ko
Publication of WO2012060619A3 publication Critical patent/WO2012060619A3/ko
Priority to US13/874,744 priority patent/US20130240919A1/en
Priority to US14/635,465 priority patent/US20150243843A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

본 발명은 전압을 인가하는 경우 발광이 가능한 반도체 소자 및 그 제조 방법에 관한 것이며, 특히 소자의 형태가 다각형 또는 원형 기둥 형태로 형성되는 반도체 소자 및 그 제조 방법에 관한 것이다. 본 발명의 반도체 소자는 복수 개의 반도체 구조체들 및 상기 복수 개의 반도체 구조체들을 지지하는 연결 지지층을 포함하고, 상기 복수 개의 반도체 구조체들 각각은 P 타입의 제1 반도체층, N 타입의 제2 반도체층; 및 상기 제1 반도체층과 상기 제2 반도체층 사이에 위치하는 발광층을 포함하고, 상기 복수 개의 반도체 구조체들 각각은 다각형의 기둥 또는 원형의 기둥을 형성한다.
PCT/KR2011/008275 2010-11-03 2011-11-02 반도체 소자 및 그 제조 방법 WO2012060619A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013537604A JP2013541855A (ja) 2010-11-03 2011-11-02 半導体素子及びその製造方法
EP11838224.1A EP2637222A4 (en) 2010-11-03 2011-11-02 SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
US13/874,744 US20130240919A1 (en) 2010-11-03 2013-05-01 Semiconductor device and a manufacturing method thereof
US14/635,465 US20150243843A1 (en) 2010-11-03 2015-03-02 Semiconductor device and a manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0108670 2010-11-03
KR1020100108670A KR101249924B1 (ko) 2010-11-03 2010-11-03 반도체 소자 및 그 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/874,744 Continuation US20130240919A1 (en) 2010-11-03 2013-05-01 Semiconductor device and a manufacturing method thereof

Publications (2)

Publication Number Publication Date
WO2012060619A2 WO2012060619A2 (ko) 2012-05-10
WO2012060619A3 true WO2012060619A3 (ko) 2012-08-02

Family

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PCT/KR2011/008275 WO2012060619A2 (ko) 2010-11-03 2011-11-02 반도체 소자 및 그 제조 방법

Country Status (5)

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US (2) US20130240919A1 (ko)
EP (1) EP2637222A4 (ko)
JP (1) JP2013541855A (ko)
KR (1) KR101249924B1 (ko)
WO (1) WO2012060619A2 (ko)

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DE102013104270A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
KR20150064414A (ko) * 2013-12-03 2015-06-11 삼성전자주식회사 발광소자 및 이를 포함하는 조명 장치
KR102142716B1 (ko) * 2014-03-13 2020-08-07 엘지이노텍 주식회사 발광소자
EP3062354B1 (en) 2015-02-26 2020-10-14 Nichia Corporation Light emitting element
JP6146460B2 (ja) * 2015-02-26 2017-06-14 日亜化学工業株式会社 発光素子
JP6825258B2 (ja) * 2016-07-29 2021-02-03 日亜化学工業株式会社 発光装置及び表示装置
DE102017113949A1 (de) * 2017-06-23 2018-12-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP7079106B2 (ja) * 2018-01-24 2022-06-01 シャープ株式会社 画像表示素子、及び画像表示素子の製造方法
CN111463261A (zh) * 2020-03-26 2020-07-28 深圳第三代半导体研究院 氮化物肖特基二极管及其制造方法
USD1012871S1 (en) * 2020-06-30 2024-01-30 Roche Molecular Systems, Inc. Circuit board sensor pad

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Also Published As

Publication number Publication date
EP2637222A4 (en) 2014-12-10
US20130240919A1 (en) 2013-09-19
US20150243843A1 (en) 2015-08-27
WO2012060619A2 (ko) 2012-05-10
KR101249924B1 (ko) 2013-04-03
KR20120047033A (ko) 2012-05-11
EP2637222A2 (en) 2013-09-11
JP2013541855A (ja) 2013-11-14

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