WO2012057075A1 - Cellule solaire à contact arrière avec carte de circuit imprimé, et procédé de fabrication d'une cellule solaire à contact arrière à carte de circuit imprimé - Google Patents

Cellule solaire à contact arrière avec carte de circuit imprimé, et procédé de fabrication d'une cellule solaire à contact arrière à carte de circuit imprimé Download PDF

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Publication number
WO2012057075A1
WO2012057075A1 PCT/JP2011/074427 JP2011074427W WO2012057075A1 WO 2012057075 A1 WO2012057075 A1 WO 2012057075A1 JP 2011074427 W JP2011074427 W JP 2011074427W WO 2012057075 A1 WO2012057075 A1 WO 2012057075A1
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WIPO (PCT)
Prior art keywords
solar cell
wiring
type
wiring board
back electrode
Prior art date
Application number
PCT/JP2011/074427
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English (en)
Japanese (ja)
Inventor
正朝 棚橋
泰史 道祖尾
友宏 仁科
安紀子 常深
隆行 山田
真介 内藤
晃司 福田
朋代 白木
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シャープ株式会社
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Publication of WO2012057075A1 publication Critical patent/WO2012057075A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a back electrode type solar cell with a wiring board and a method for manufacturing a back electrode type solar cell with a wiring board.
  • solar cells that convert solar energy into electrical energy have been rapidly expected as next-generation energy sources.
  • solar cells such as those using compound semiconductors and those using organic materials, but currently, solar cells using silicon crystals are the mainstream.
  • the most manufactured and sold solar cells have an n-electrode formed on the surface on which sunlight is incident (light-receiving surface), and a p-electrode on the surface opposite to the light-receiving surface (back surface). It is a double-sided electrode type solar cell having the formed structure.
  • Patent Document 1 Japanese Unexamined Patent Application Publication No. 2009-88145 discloses a technique for connecting a back electrode type solar cell and a wiring board.
  • a back electrode type solar cell and a wiring board are connected by the following steps. (1) A step in which the electrode portion is solder coated by immersing the back electrode type solar cell in a Sn-Bi solder bath. (2) The process of apply
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2009-88145
  • the electrodes of the back electrode type solar cells and the wiring of the wiring board are electrically connected by a conductive adhesive made of Sn—Bi solder.
  • the back electrode type solar cells and the wiring board are mechanically connected by bonding with an insulating adhesive made of an acrylic adhesive.
  • Patent Document 1 Japanese Patent Laid-Open No. 2009-88145
  • the conductive adhesive and the insulating adhesive are separately provided, there is no gap between the conductive adhesive and the insulating adhesive. Was sometimes formed.
  • a gap is formed between the conductive adhesive and the insulating adhesive, the mechanical connection between the back electrode type solar cell and the wiring board is not stable and the reliability is lowered. was there.
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2008-34592 uses a thermosetting conductive solder paste to electrically connect the collector electrode and the tab electrode of the double-sided solar cell, A technique for mechanically connecting is disclosed.
  • thermosetting conductive solder paste between the collector electrode and the tab electrode of the double-sided electrode type solar battery cell, the solder in the solder paste is melted and aggregated simultaneously. Then, the thermosetting resin in the solder paste is bleed out to the outside of the collector electrode. Thus, the collector electrode and the tab electrode are electrically connected by the solder layer in the solder paste, and the collector electrode and the tab are covered with the solder layer and the thermosetting resin layer in the solder paste. A mechanical connection with the electrode is made.
  • the collector electrode is covered with the solder layer and the thermosetting resin layer, but the tab electrode is covered with only a small area on one surface. (See FIG. 2 of Patent Document 2), and the other surface and side surfaces of the tab electrode are all exposed.
  • an object of the present invention is to provide a back electrode type solar cell with a wiring board and a method of manufacturing a back electrode type solar cell with a wiring board that can improve characteristics and reliability. is there.
  • the present invention includes a back electrode type solar cell in which electrodes having different polarities are provided on one surface, a wiring substrate in which wiring is provided on one surface of an insulating substrate, a back electrode type solar cell and wiring
  • An adhesive that adheres to the substrate, and the adhesive includes a conductive adhesive and an insulating adhesive, and at least a part of the surface of the electrode and at least a part of the surface of the wiring are made of the conductive adhesive.
  • the insulating adhesive covers the outer surfaces of the electrically connected electrode, the wiring, and the conductive adhesive, and has a portion in contact with the side surface of the wiring It is a back electrode type solar cell with a cover.
  • another insulating adhesive different from the insulating adhesive is a space between the back electrode type solar cell and the wiring substrate. It is preferable that the space between electrodes of different polarities and between adjacent wirings is filled.
  • the other insulating adhesive is disposed adjacent to the insulating adhesive.
  • the insulating adhesive is a space between the back electrode type solar cell and the wiring board, and between electrodes having different polarities and between adjacent wirings. It is preferable that the space is filled.
  • the present invention is a solar cell module in which the back electrode type solar cell with a wiring board is sealed in a sealing material.
  • the present invention provides a conductive material for at least one of the surface of the electrode of different polarity provided on one surface of the back electrode type solar cell and the surface of the wiring provided on one surface of the insulating substrate of the wiring board.
  • the step of installing the insulation between the surface between the electrodes having different polarities of the back electrode type solar cell and the adjacent wiring of the wiring board It is preferable to include a step of installing another insulating adhesive different from the insulating adhesive on at least one of the surfaces of the conductive base material.
  • the other insulating adhesive is disposed at a position adjacent to the insulating adhesive.
  • the insulating adhesive is a space between the back electrode type solar cell and the wiring substrate, and has a polarity. It is preferable to fill a space between different electrodes and between adjacent wirings.
  • a back electrode type solar cell with a wiring board and a method for manufacturing a back electrode type solar cell with a wiring board that can improve characteristics and reliability.
  • FIG. 3 is a schematic cross-sectional view of a back electrode type solar cell with a wiring board according to Embodiment 1.
  • FIG. (A)-(d) is typical sectional drawing illustrating an example of the manufacturing method of the back surface electrode type photovoltaic cell with a wiring board of Embodiment 1.
  • FIG. (A)-(g) is typical sectional drawing illustrating an example of the manufacturing method of the back electrode type photovoltaic cell used in Embodiment 1.
  • FIG. It is a typical top view of an example when the back surface electrode type photovoltaic cell used in Embodiment 1 is seen from the back surface side.
  • It is a schematic plan view of another example when the back surface electrode type solar cell used in Embodiment 1 is viewed from the back surface side.
  • FIG. 6 is a schematic plan view of still another example when the back electrode type solar battery cell used in Embodiment 1 is viewed from the back surface side.
  • FIG. 3 is a schematic plan view when an example of the wiring board used in the first embodiment is viewed from the wiring installation side.
  • FIG. 8 is a schematic cross-sectional view taken along the line VIII-VIII in FIG. 3 is a schematic plan view of a back electrode type solar cell with a wiring board according to Embodiment 1.
  • FIG. FIG. 3 is a schematic cross-sectional view of a solar cell module including a back electrode type solar cell with a wiring board according to the first embodiment.
  • 6 is a schematic cross-sectional view of a back electrode type solar cell with a wiring board according to a second embodiment.
  • FIG. 6 is a schematic cross-sectional view of a back electrode type solar cell with a wiring board according to a third embodiment.
  • FIG. It is a figure which shows the temperature profile of an Example.
  • FIG. 1 is a schematic cross-sectional view of a back electrode type solar cell with a wiring board of Embodiment 1 which is an example of the semiconductor device of the present invention.
  • the back electrode type solar battery cell with a wiring board includes a back electrode type solar battery cell 8 and a wiring board 10.
  • the back electrode type solar cell 8 has a semiconductor substrate 1 and an n-type electrode 6 and a p-type electrode 7 provided on one surface of the semiconductor substrate 1.
  • the n-type electrode 6 and the p-type electrode 7 are electrodes having different polarities.
  • the wiring substrate 10 has an insulating base material 11 and also has an n-type wiring 12 and a p-type wiring 13 provided on one surface of the insulating base material 11.
  • the n-type wiring 12 is a wiring corresponding to the n-type electrode 6, and is provided to face the n-type electrode 6.
  • the p-type wiring 13 is a wiring corresponding to the p-type electrode 7 and is provided to face the p-type electrode 7.
  • the back electrode type solar cell 8 and the wiring substrate 10 are bonded by a conductive adhesive 21 and an insulating adhesive 23.
  • the n-type electrode 6 of the back electrode type solar cell 8 is electrically connected to the n-type wiring 12 of the wiring substrate 10 by the conductive adhesive 21. Further, the p-type electrode 7 of the back electrode type solar cell 8 is electrically connected to the p-type wiring 13 of the wiring substrate 10 by the conductive adhesive 21.
  • the electrical connection between the n-type electrode 6 and the n-type wiring 12 by the conductive adhesive 21 is at least part of the surface of the n-type electrode 6 and at least part of the surface of the n-type wiring 12. May be electrically connected via the conductive adhesive 21. Further, the electrical connection between the p-type electrode 7 and the p-type wiring 13 by the conductive adhesive 21 is at least part of the surface of the p-type electrode 7 and at least part of the surface of the p-type wiring 13. May be electrically connected via the conductive adhesive 21.
  • the semiconductor substrate 1 of the back electrode type solar cell 8 and the insulating base material 11 of the wiring substrate 10 are mechanically connected by an insulating adhesive 23.
  • the outer surface of the connection body 24 of the electrically connected n-type electrode 6, n-type wiring 12, and conductive adhesive 21 is formed.
  • the outer surface of the connection body 25 of the p-type electrode 7, the p-type wiring 13, and the conductive adhesive 21 that is covered with the insulating adhesive 23 and electrically connected thereto is also the insulating adhesive 23. Covered by.
  • the outer surfaces of the n-type electrode 6, the p-type electrode 7, the n-type wiring 12 and the p-type wiring 13 are covered with the insulating adhesive 23.
  • the conductive adhesive 21 that electrically connects the n-type electrode 6 and the n-type wiring 12 and the conductive adhesive 21 that electrically connects the p-type electrode 7 and the p-type wiring 13 are also shown.
  • Each outer surface is also covered with an insulating adhesive 23.
  • the insulating adhesive 23 can prevent the connection bodies 24 and 25 from moving outward.
  • the insulating adhesive 23 has at least a portion of the outer surface of the connection body 24 and / or the connection body 25 facing the region between adjacent electrodes having different polarities and the region between adjacent wirings. It is preferable to cover. In this case, it tends to be possible to obtain a back electrode type solar cell with a wiring board with improved characteristics and reliability by suppressing the occurrence of an electrical short circuit due to the ion migration phenomenon.
  • FIGS. 2A to 2D are schematic cross-sectional views illustrating an example of the manufacturing method of the back electrode type solar cell with a wiring board according to the first embodiment.
  • FIGS. 2A to 2D an example of a method for manufacturing the back electrode type solar cell with wiring board of Embodiment 1 will be described.
  • a back electrode type solar cell 8 is prepared in which n-type electrodes 6 and p-type electrodes 7 having different polarities are alternately provided on one surface of a semiconductor substrate 1. To do.
  • solder resin 20 is placed on each surface of the n-type electrode 6 and the p-type electrode 7 on the back surface of the semiconductor substrate 1 of the back electrode type solar cell 8.
  • the solder resin 20 includes a conductive adhesive 21 and an insulating adhesive 23, and has a configuration in which the conductive adhesive 21 is dispersed in the insulating adhesive 23.
  • a conductive substance such as solder particles can be used.
  • a thermosetting and / or photocurable insulating resin containing at least one selected from the group consisting of epoxy resin, acrylic resin and urethane resin as a resin component is used. it can.
  • solder resin 20 As a method for installing the solder resin 20, for example, a screen printing method, a dispenser coating method, an ink jet coating method, or the like can be used. Among them, it is preferable to use a screen printing method. When screen printing is used, the solder resin 20 can be installed simply, at low cost, and in a short time.
  • solder resin 20 is provided on the electrode of the back electrode type solar cell 8
  • the solder resin 20 may be provided on the wiring of the wiring substrate 10, and the back surface.
  • the solder resin 20 may be provided on both the electrode of the electrode type solar cell 8 and the wiring of the wiring substrate 10.
  • the back electrode type solar cells 8 and the wiring substrate 10 are overlapped.
  • the n-type electrode 6 and the p-type electrode 7 of the back electrode type solar battery cell 8 are respectively overlapped on the insulating base material 11 of the wiring board 10. Is performed so as to face the n-type wiring 12 and the p-type wiring 13 provided in the circuit.
  • solder resin 20 is heated while pressurizing the back electrode type solar cells 8 and the wiring substrate 10.
  • the conductive adhesive 21 in the solder resin 20 is melted, and the molten conductive adhesive 21 becomes the n-type electrode 6 of the back electrode type solar cell 8. And at least a part of the surface of the p-type electrode 7 of the back electrode type solar cell 8, and agglomerates between at least a part of the surface of the p-type electrode 12 and the surface of the n-type wiring 12 of the wiring substrate 10. Aggregates between at least part of the surface of the p-type wiring 13 of the wiring substrate 10. At this time, the insulating adhesive 23 is disposed so as to cover the outer surfaces of the connection body 24 and the connection body 25.
  • the conductive adhesive 21 is solidified by heating and heating until the insulating adhesive 23 is in a cured state, whereby the back electrode solar cell with a wiring board of the first embodiment can be manufactured. .
  • the back electrode type solar cell 8 for example, the back electrode type solar cell 8 manufactured as follows can be used.
  • an example of a method for manufacturing the back electrode type solar cell 8 used in the present embodiment will be described with reference to the schematic cross-sectional views of FIGS. 3 (a) to 3 (g).
  • a semiconductor substrate 1 having a slice damage 1a formed on the surface of the semiconductor substrate 1 is prepared by, for example, slicing from an ingot.
  • the semiconductor substrate for example, a silicon substrate made of polycrystalline silicon, single crystal silicon, or the like having either n-type or p-type conductivity can be used.
  • the slice damage 1a on the surface of the semiconductor substrate 1 is removed.
  • the removal of the slice damage 1a is performed, for example, when the semiconductor substrate 1 is made of the above silicon substrate, the surface of the silicon substrate after the above slice is mixed with an aqueous solution of hydrogen fluoride and nitric acid, sodium hydroxide, or the like. It can be performed by etching with an alkaline aqueous solution or the like.
  • the size and shape of the semiconductor substrate 1 after removal of the slice damage 1a are not particularly limited, but the thickness of the semiconductor substrate 1 can be set to 50 ⁇ m or more and 400 ⁇ m or less, for example.
  • an n-type impurity diffusion region 2 and a p-type impurity diffusion region 3 are formed on the back surface of the semiconductor substrate 1, respectively.
  • the n-type impurity diffusion region 2 can be formed, for example, by a method such as vapor phase diffusion using a gas containing n-type impurities
  • the p-type impurity diffusion region 3 uses, for example, a gas containing p-type impurities. It can be formed by a method such as vapor phase diffusion.
  • the n-type impurity diffusion region 2 and the p-type impurity diffusion region 3 are each formed in a strip shape extending to the front side and / or the back side of the paper surface of FIG. 3, and the n-type impurity diffusion region 2 and the p-type impurity diffusion region 3 Are alternately arranged at predetermined intervals on the back surface of the semiconductor substrate 1.
  • the n-type impurity diffusion region 2 is not particularly limited as long as it includes an n-type impurity and exhibits n-type conductivity.
  • an n-type impurity such as phosphorus can be used.
  • the p-type impurity diffusion region 3 is not particularly limited as long as it includes a p-type impurity and exhibits p-type conductivity.
  • a p-type impurity such as boron or aluminum can be used.
  • n-type impurity a gas containing an n-type impurity such as phosphorus such as POCl 3 can be used.
  • a gas containing a p-type impurity a p-type such as boron such as BBr 3 is used.
  • a gas containing impurities can be used.
  • a passivation film 4 is formed on the back surface of the semiconductor substrate 1.
  • the passivation film 4 can be formed by a method such as a thermal oxidation method or a plasma CVD (Chemical Vapor Deposition) method.
  • the passivation film 4 for example, a silicon oxide film, a silicon nitride film, or a stacked body of a silicon oxide film and a silicon nitride film can be used, but is not limited thereto.
  • the thickness of the passivation film 4 can be, for example, 0.05 ⁇ m or more and 1 ⁇ m or less, and particularly preferably about 0.2 ⁇ m.
  • an uneven structure such as a texture structure is formed on the entire light-receiving surface of the semiconductor substrate 1, and then an antireflection film 5 is formed on the uneven structure.
  • the texture structure can be formed, for example, by etching the light receiving surface of the semiconductor substrate 1.
  • the semiconductor substrate 1 is a silicon substrate
  • the semiconductor is used by using an etching solution in which a solution obtained by adding isopropyl alcohol to an alkaline aqueous solution such as sodium hydroxide or potassium hydroxide is heated to 70 ° C. or higher and 80 ° C. or lower, for example. It can be formed by etching the light receiving surface of the substrate 1.
  • the antireflection film 5 can be formed by, for example, a plasma CVD method.
  • a silicon nitride film or the like can be used, but is not limited thereto.
  • a part of the passivation film 4 on the back surface of the semiconductor substrate 1 is removed to form a contact hole 4a and a contact hole 4b.
  • the contact hole 4a is formed so as to expose at least part of the surface of the n-type impurity diffusion region 2, and the contact hole 4b exposes at least part of the surface of the p-type impurity diffusion region 3. Formed.
  • the contact hole 4a and the contact hole 4b are formed after a resist pattern having openings at portions corresponding to the formation positions of the contact hole 4a and the contact hole 4b is formed on the passivation film 4 by using, for example, photolithography technology.
  • a back electrode type solar battery cell 8 To form the back electrode type solar battery cell 8.
  • n-type electrode 6 and the p-type electrode 7 for example, electrodes made of metal such as silver can be used.
  • the n-type electrode 6 and the p-type electrode 7 are each formed in a strip shape extending to the front side and / or the back side of the paper surface of FIG. 3, and the n-type electrode 6 and the p-type electrode 7 are respectively formed on the passivation film 4.
  • the n-type impurity diffusion region 2 and the p-type impurity diffusion region 3 are formed in contact with the n-type impurity diffusion region 2 and the p-type impurity diffusion region 3 on the back surface of the semiconductor substrate 1, respectively. Has been.
  • FIG. 4 shows a schematic plan view of an example when the back electrode type solar cell 8 manufactured as described above is viewed from the back side.
  • the n-type electrode 6 and the p-type electrode 7 are each formed in a comb shape, and the portion corresponding to the comb teeth of the comb-shaped n-type electrode 6 and the comb-shaped p-type electrode
  • the n-type electrode 6 and the p-type electrode 7 are arranged so that the portions corresponding to the comb teeth of the electrode 7 are alternately meshed one by one.
  • a portion corresponding to the comb teeth of the comb-shaped n-type electrode 6 and a portion corresponding to the comb teeth of the comb-shaped p-type electrode 7 are alternately arranged at predetermined intervals. Will be.
  • the shape and arrangement of the n-type electrode 6 and the p-type electrode 7 on the back surface of the back electrode type solar battery cell 8 are not limited to the configuration shown in FIG. 4, and the n-type wiring 12 and p of the wiring substrate 10. Any shape and arrangement that can be electrically connected to the mold wiring 13 are acceptable.
  • FIG. 5 shows a schematic plan view of another example when the back electrode type solar battery cell 8 is viewed from the back surface side.
  • the n-type electrode 6 and the p-type electrode 7 are each formed in a strip shape that extends in the same direction (extends in the vertical direction in FIG. 5).
  • One is alternately arranged in a direction orthogonal to the direction.
  • FIG. 6 shows a schematic plan view of still another example when the back electrode type solar battery cell 8 is viewed from the back surface side.
  • the n-type electrode 6 and the p-type electrode 7 are each formed in a dot shape, and the row of dot-like n-type electrodes 6 (extending in the vertical direction in FIG. 6) and the dot shape.
  • the rows of p-type electrodes 7 are alternately arranged one by one on the back surface of the semiconductor substrate 1.
  • the wiring board 10 for example, the following wiring board 10 can be used.
  • FIG. 7 shows a schematic plan view of an example of the wiring board used in the present embodiment as viewed from the wiring installation side.
  • the wiring substrate 10 includes an insulating base 11, a wiring including an n-type wiring 12, a p-type wiring 13, and a connection wiring 14 installed on the surface of the insulating base 11. 16.
  • the n-type wiring 12, the p-type wiring 13 and the connection wiring 14 are conductive, and the n-type wiring 12 and the p-type wiring 13 are arranged in a direction in which a plurality of rectangles are orthogonal to the longitudinal direction of the rectangle. It is set as the comb shape containing the shape made.
  • the connection wiring 14 has a strip shape. Further, the n-type wiring 12 and the p-type wiring 13 other than the n-type wiring 12a and the p-type wiring 13a, which are located at the end of the wiring board 10, are electrically connected by the connection wiring 14. Has been.
  • the portions corresponding to the comb teeth (rectangular) of the comb-shaped n-type wiring 12 and the portions corresponding to the comb teeth (rectangular) of the comb-shaped p-type wiring 13 are alternately arranged one by one.
  • An n-type wiring 12 and a p-type wiring 13 are arranged so as to be engaged with each other.
  • the portion corresponding to the comb teeth of the comb-shaped n-type wiring 12 and the portion corresponding to the comb teeth of the comb-shaped p-type wiring 13 are alternately arranged at predetermined intervals. Will be.
  • FIG. 8 shows a schematic cross-sectional view along the line VIII-VIII in FIG. As shown in FIG. 8, in the wiring substrate 10, the n-type wiring 12 and the p-type wiring 13 are provided only on one surface of the insulating base material 11.
  • the material of the insulating substrate 11 can be used without particular limitation as long as it is an electrically insulating material.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PET polyphenylene sulfide
  • a material containing at least one resin selected from the group consisting of PPS (Polyphenylene sulfide), polyvinyl fluoride (PVF) and polyimide (Polyimide) can be used.
  • the thickness of the insulating substrate 11 is not particularly limited, and can be, for example, 25 ⁇ m or more and 150 ⁇ m or less.
  • the insulating substrate 11 may have a single-layer structure composed of only one layer or a multi-layer structure composed of two or more layers.
  • the wiring 16 can be used without particular limitation as long as it is made of a conductive material.
  • a metal including at least one selected from the group consisting of copper, aluminum, and silver can be used. .
  • the thickness of the wiring 16 is not particularly limited, and can be, for example, 10 ⁇ m or more and 50 ⁇ m or less.
  • the shape of the wiring 16 is not limited to the shape described above, and can be set as appropriate.
  • a conductive substance containing at least one selected from the group consisting of Tin Oxide may be installed.
  • the electrical connection between the wiring 16 of the wiring substrate 10 and the electrode of the back electrode type solar battery cell 8 to be described later can be improved and the weather resistance of the wiring 16 can be improved.
  • At least a part of the surface of the wiring 16 may be subjected to a surface treatment such as a rust prevention treatment or a blackening treatment.
  • the wiring 16 may also have a single-layer structure consisting of only one layer or a multi-layer structure consisting of two or more layers.
  • an insulating substrate 11 such as a PEN film is prepared, and a conductive material such as a metal foil or a metal plate is bonded to the entire surface of one surface of the insulating substrate 11.
  • a conductive material such as a metal foil or a metal plate is bonded to the entire surface of one surface of the insulating substrate 11.
  • pull out a roll of insulating base material cut to a predetermined width apply adhesive on one surface of the insulating base material, and stack a roll of metal foil cut slightly smaller than the width of the insulating base material They can be bonded together by applying pressure and heating.
  • the conductive material is patterned on the surface of the insulating substrate 11 by removing a part of the conductive material bonded to the surface of the insulating substrate 11 by photoetching or the like and patterning the conductive material.
  • a wiring 16 including an n-type wiring 12, a p-type wiring 13, a connection wiring 14, and the like made of a conductive material is formed.
  • FIG. 9 shows a schematic plan view of the back electrode type solar cell with wiring board of the first embodiment.
  • the back electrode solar cell 8 and the wiring are arranged such that the back surface, which is the surface on the electrode installation side of the back electrode type solar cell 8, faces the wiring installation side surface of the wiring substrate 10.
  • a substrate 10 is installed.
  • 16 back electrode type solar cells 8 are installed on one wiring board 10, but it is needless to say that the present invention is not limited to this configuration. It is good also as a structure which installed the back electrode type photovoltaic cell 8.
  • FIG. 9 shows a schematic plan view of the back electrode type solar cell with wiring board of the first embodiment.
  • the back electrode solar cell 8 and the wiring are arranged such that the back surface, which is the surface on the electrode installation side of the back electrode type solar cell 8, faces the wiring installation side surface of the wiring substrate 10.
  • a substrate 10 is installed.
  • 16 back electrode type solar cells 8 are installed on one wiring board 10, but it is needless to say that the present invention is not limited to this configuration. It is good also
  • the back electrode type solar cell with wiring board of Embodiment 1 is sealed in a sealing material 18 between a front surface protective material 17 and a back surface protective material 19 as shown in a schematic sectional view of FIG. As a result, a solar cell module is manufactured.
  • the solar cell module shown in FIG. 10 includes, for example, a sealing material 18 such as ethylene vinyl acetate (EVA) provided on a surface protective material 17 such as glass, and an EVA provided on a back surface protective material 19 such as a polyester film.
  • a sealing material 18 such as ethylene vinyl acetate (EVA) provided on a surface protective material 17 such as glass
  • EVA ethylene vinyl acetate
  • a back surface protective material 19 such as a polyester film.
  • the concept of the back electrode type solar cell in the present invention includes only the structure in which both the n-type electrode and the p-type electrode are formed only on one surface side (back side) of the semiconductor substrate described above.
  • back-contact solar cells photovoltaic surface side of solar cells
  • MWT Metal Wrap Through
  • All of the solar cells having a structure in which a current is taken out from the back side opposite to the front side.
  • FIG. 11 is a schematic cross-sectional view of a back electrode type solar cell with a wiring board according to Embodiment 2, which is another example of the semiconductor device of the present invention.
  • the insulating adhesive 23 is a space between the back electrode type solar cell 8 and the wiring board 10 and between electrodes having different polarities (n The space between the mold electrode 6 and the p-type electrode 7) and between adjacent wirings (between the n-type wiring 12 and the p-type wiring 13) is filled.
  • the insulating adhesive 23 is in the space between the back electrode type solar cell 8 other than the connecting bodies 24 and 25 and the wiring board 10. Filled.
  • connection body 24 of the electrically connected n-type electrode 6, n-type wiring 12 and conductive adhesive 21 outside of the connection body 24 of the electrically connected n-type electrode 6, n-type wiring 12 and conductive adhesive 21.
  • the surface is covered with the insulating adhesive 23 and the outer surface of the connection body 25 of the electrically connected p-type electrode 7, p-type wiring 13 and conductive adhesive 21 is also insulatively bonded. Covered by the material 23.
  • the insulating adhesive 23 can prevent the connection bodies 24 and 25 from moving outward.
  • insulative adhesion is performed not only on the outer surface of the connection bodies 24 and 25 but also in a space other than the connection bodies 24 and 25 as in the first embodiment.
  • the material 23 is filled.
  • the back electrode type solar cell 8 and the wiring substrate 10 are connected by the insulating adhesive 23 filled between the semiconductor substrate 1 of the back electrode type solar cell 8 and the insulating base material 11 of the wiring substrate 10. Since it can adhere
  • the back electrode type solar cell with wiring board of the second embodiment can be used, for example, in the manufacturing method of the back electrode type solar cell with wiring board of the first embodiment by increasing the amount of use of the solder resin 20 or soldering. It can be manufactured by increasing the proportion of the insulating adhesive 23 contained in the resin 20.
  • FIG. 12 is a schematic cross-sectional view of a back electrode type solar cell with a wiring board according to Embodiment 3, which is another example of the semiconductor device of the present invention.
  • the insulating adhesive material 23 and the insulating adhesive material 23 are used as adhesives for bonding the back electrode type solar cell 8 and the wiring substrate 10 together.
  • Another different insulating adhesive material 22 is used.
  • the insulating adhesive 23 is arranged so as to cover the outer surfaces of the connecting bodies 24 and 25, and the insulating adhesive 23 is attached to the insulating adhesive 23.
  • Another insulating adhesive material 22 is disposed at an adjacent position.
  • the outside of the connection body 24 of the electrically connected n-type electrode 6, n-type wiring 12 and conductive adhesive 21 The surface is covered with the insulating adhesive 23 and the outer surface of the connection body 25 of the electrically connected p-type electrode 7, p-type wiring 13 and conductive adhesive 21 is also insulatively bonded. Covered by the material 23. And it is a space between the back electrode type solar cell 8 and the wiring board 10 so as to be adjacent to the insulating adhesive 23, and between electrodes having different polarities (n-type electrode 6 and p-type electrode 7. Between the adjacent wirings (between the n-type wiring 12 and the p-type wiring 13), another insulating adhesive 22 is disposed.
  • the insulating adhesive 23 can prevent the connection bodies 24 and 25 from moving outward.
  • the insulating adhesive 23 and other insulating properties filled in the space other than the connection bodies 24 and 25 are used.
  • the adhesive 22 can further suppress the intrusion of moisture into the connection bodies 24 and 25.
  • the back electrode type solar cell 8 and the wiring substrate 10 can be firmly bonded, the reliability can be further improved.
  • the manufacturing cost can be reduced while ensuring the same reliability as in the second embodiment.
  • the back electrode type solar cell with wiring board of the third embodiment uses, for example, another insulating adhesive 22 together with the solder resin 20 in the manufacturing method of the back electrode type solar cell with wiring board of the second embodiment. Can be manufactured.
  • n-type electrode formed on the n-type impurity diffusion region on the back surface of the n-type silicon substrate and a strip-shaped p-type electrode formed on the p-type impurity diffusion region are alternately arranged one by one.
  • the arranged back electrode type solar cell was produced.
  • each of the n-type electrode and the p-type electrode was an Ag electrode, and the pitch between the adjacent n-type electrode and the p-type electrode was 750 ⁇ m.
  • the width of each of the n-type electrode and the p-type electrode was 50 ⁇ m to 150 ⁇ m, and the height of each of the n-type electrode and the p-type electrode was 3 ⁇ m to 13 ⁇ m.
  • solder resin TCAP-5401-27 manufactured by Tamura Kaken Co., Ltd.
  • the solder resin used here is a solder resin in which Sn—Bi-based solder particles (conductive adhesive) are dispersed in an epoxy-based insulating resin (second insulating adhesive).
  • Sn—Bi-based solder particles conductive adhesive
  • second insulating adhesive epoxy-based insulating resin
  • the back electrode type solar cell is formed on the wiring substrate so that the n type electrode and the p type electrode on the back surface of the back electrode type solar cell face the n type wiring and the p type wiring of the wiring substrate, respectively.
  • the battery cells were stacked.
  • the n-type wiring and the p-type wiring are each formed on an insulating substrate made of PEN, and the n-type wiring and the p-type wiring are each copper wiring.
  • the stacked back electrode type solar cells and the wiring substrate are placed in a vacuum laminator with the back electrode type solar cell side as the lower side, and heated and pressurized according to the temperature profile shown in FIG.
  • a back electrode type solar cell with a wiring board was prepared.
  • the temperature profile shown in FIG. 13 was measured using thermocouples 1-6.
  • the back electrode type solar cell with wiring board of Example 1 is a connected body of n-type electrode 6, n-type wiring 12 and conductive adhesive 21 that are electrically connected.
  • the outer surface of 24 is covered with an insulating adhesive 23, and the outer surface of the connection body 25 of the electrically connected p-type electrode 7, p-type wiring 13 and conductive adhesive 21 is also provided. It was covered with an insulating adhesive 23. A space is provided between the adjacent insulating adhesives 23.
  • the back electrode type solar cell with wiring board of Example 1 is adjacent between the semiconductor substrate 1 of the back electrode type solar cell 8 and the insulating base material 11 of the wiring board 10. Even when moisture enters between the insulating adhesive 23 that covers the outer surface of the mating connecting body 24 and the outer surface of the connecting body 25, the insulative adhesive 23 suppresses intrusion to the connecting bodies 24 and 25. I was able to.
  • the insulating adhesive 23 could prevent the metal constituting the electrode and / or the metal constituting the wiring from being deposited on the outside of the connecting bodies 24 and 25.
  • the back electrode type solar cell with wiring board of Example 1 was able to improve characteristics and reliability as compared with the back electrode type solar cell with wiring board of Comparative Example 1 described later.
  • Example 2 Other than increasing the amount of solder resin (TCAP-5401-27 manufactured by Tamura Kaken Co., Ltd.) installed on the n-type electrode and the p-type electrode of the back electrode type solar cell, respectively.
  • solder resin TCAP-5401-27 manufactured by Tamura Kaken Co., Ltd.
  • the back electrode type solar cell with wiring board of Example 2 is connected to the n-type electrode 6, the n-type wiring 12, and the conductive adhesive 21, and the p-type electrode 7.
  • the space other than the connection body 25 between the p-type wiring 13 and the conductive adhesive 21 was filled with the insulating adhesive 23.
  • the space between the back surface electrode type solar cell 8 and the wiring substrate 10 and the space other than the connection bodies 24 and 25 is insulatively bonded. Since it was filled with the material 23, compared with the back surface electrode type solar cell with the wiring substrate of Example 1, it is possible to suppress the intrusion of moisture between the back surface electrode type solar cell 8 and the wiring substrate 10. In addition, the strength of the mechanical connection between the back electrode type solar cell 8 and the wiring board 10 could be improved.
  • Example 3 Adjacent positions of the solder resin (TCAP-5401-27 manufactured by Tamura Kaken Co., Ltd.) are changed to another insulating adhesive made of a thermosetting epoxy resin that is cheaper than the solder resin.
  • a back electrode type solar cell with a wiring board of Example 3 was produced in the same manner as in Example 2 except that another insulating adhesive was installed between the solder resins installed in the substrate.
  • the back electrode type solar cell with wiring board of Example 3 has an outer surface of a connection body 24 of n-type electrode 6, n-type wiring 12, and conductive adhesive 21, and p-type.
  • the outer surface of the connection body 25 of the electrode 7, the p-type wiring 13 and the conductive adhesive 21 is covered with the insulating adhesive 23, respectively, and the other back electrode type solar cells 8 and the wiring substrate 10 The space between them was filled with another insulating adhesive material 22.
  • the space between the back surface electrode type solar cell 8 and the wiring substrate 10 and the space other than the connection bodies 24 and 25 is the first. Since it was filled with the insulating adhesive material 23 and the second insulating adhesive material 22, the back electrode solar cell 8 and the wiring substrate 10 were compared with the back electrode solar cell with the wiring substrate of Example 1. The mechanical connection strength of can be improved.
  • the wiring board with Example 2 is attached. Compared with a back electrode type solar cell, an increase in manufacturing cost could be suppressed.
  • the present invention can be used for a semiconductor device and a method for manufacturing the semiconductor device, and in particular, can be suitably used for a back electrode type solar cell with a wiring board, a solar cell module, and a method for manufacturing these.

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  • Engineering & Computer Science (AREA)
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  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire à contact arrière avec une carte de circuit imprimé, qui comporte : une cellule solaire à contact arrière (8) qui comporte des électrodes (6, 7) ayant des polarités différentes sur une surface ; une carte de circuit imprimé (10), des lignes de circuit (12, 13) étant formées sur une surface d'un substrat isolant (11) ; et des matériaux adhésifs (21, 23) qui collent la cellule solaire à contact arrière (8) et la carte de circuit imprimé (10) l'une à l'autre. Les matériaux adhésifs (21, 23) comprennent chacun un matériau adhésif conducteur (21) et un matériau adhésif isolant (23). Au moins des parties des surfaces des électrodes (6, 7) et au moins des parties des surfaces des lignes de circuit (12, 13) sont électriquement connectées entre elles respectivement via les matériaux adhésifs conducteurs (21). Les matériaux adhésifs isolants (23) recouvrent les surfaces des électrodes (6, 7) respectives et au moins des parties des surfaces des lignes de circuit (12, 13), qui sont électriquement connectées entre elles, et les surfaces extérieures respectives des matériaux adhésifs conducteurs (21), et ont des parties qui sont respectivement en contact avec les surfaces latérales des lignes de circuit (12, 13). L'invention concerne aussi un procédé servant à fabriquer la cellule solaire à contact arrière avec une carte de circuit imprimé.
PCT/JP2011/074427 2010-10-29 2011-10-24 Cellule solaire à contact arrière avec carte de circuit imprimé, et procédé de fabrication d'une cellule solaire à contact arrière à carte de circuit imprimé WO2012057075A1 (fr)

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JP2010244233A JP5140132B2 (ja) 2010-10-29 2010-10-29 配線基板付き裏面電極型太陽電池セル、太陽電池モジュールおよび配線基板付き裏面電極型太陽電池セルの製造方法
JP2010-244233 2010-10-29

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MY172608A (en) 2013-05-17 2019-12-05 Kaneka Corp Solar cell, production method therefor, and solar cell module
KR102298437B1 (ko) * 2014-08-27 2021-09-07 엘지전자 주식회사 태양 전지 모듈
NL2014040B1 (en) * 2014-12-23 2016-10-12 Stichting Energieonderzoek Centrum Nederland Method of making a curent collecting grid for solar cells.
KR101658733B1 (ko) * 2015-07-08 2016-09-21 엘지전자 주식회사 태양 전지 모듈
KR102474476B1 (ko) * 2017-09-15 2022-12-07 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 모듈

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