201232795 六、發明說明： 【發明所屬之技術領域】 本發明係關於-種附有配線基板之背面電極型太陽電池 單元及附有配線基板之背面電極型太陽電池單元之製造方 . 法。 、 【先前技術】 近年來，尤其就保護地球環境之觀點而言，將太陽能轉 換為電能之太陽電池單元作為下一代的能源的期待急遽提 高。太陽電池單元的種類中存在使用化合物半導體者或使 用有機材料者等各種，當前，使用石夕晶體之太陽電池單元 成為主流。 當則，製造及銷售得做多之太陽電池單元為於太陽光入 射之側之面（受光面）形成有、於與受光面為相反侧之 面（背面）形成有P電極之構成之雙面電極型太陽電池單元。 又’於太陽電池單元之受光面未形成電極而僅於太陽電 池單元之背面形成η電極及極的背面電極型太陽電池單 元之開發亦正在進行。 例如於專利文獻1(日本專利特開2〇〇9_88145號公報）中， ㈣有—種連接f面電極型太陽電池單元與配線片材之技 術。於專利文獻丨（日本專利特開2009-88 145號公報）中，藉 由以下步驟而連接背面電極型太陽電池單元與配線片材。 ⑴將煮面電極型太陽電池單元浸潰於如也焊料槽而對電 極部分進行焊料塗佈之步驟。 (2)藉由網版印刷而將丙烯酸系黏著劑塗佈於背面電極型太 159707.doc 201232795 陽電池單元之背面之電極以外之部分的步驟。 (3) 於配線基板上設置背面電極型太陽電池單元之步驟。 (4) 將背面電極型太陽電池單元與配線基板加熱壓接之步 驟。 藉此，於專利文獻丨（曰本專利特開2〇〇9_88145號公報） 中，藉由包含Sn-Bi焊料之導電性接著材將背面電極型太 陽電池單元之電極與配線基板之配線電性連接，並且藉由 包含丙稀酸系黏著劑之絕緣性接著材將f面電極型太陽電 池單元與配線基板接著而機械連接。 …、:而，專利文獻丨（曰本專利特開號公報）中， 將導電性接著材與絕緣性接著材分職置，因此有時於導 «接著材與料性接著材之間形成有㈣。於在導電性 接著材與絕緣性接著材之間形成有間隙之情形時，會有背 面電極型太陽電池單元與配線基板之機械連接之穩定性欠 佳而可靠性下降之問題。 入 於寻利文獻2(日本專利特開2〇〇8_34592號公報）中揭 不有-種藉由使用熱硬化型導電性谭料膏而將雙面電極型 電池單元之集電極與薄片電極電性連接並機械連接之 技術。 〜 片：藉由於雙面電極型太陽電池單元之集電極與 =極之間配置熱硬化型導電性坪料f並加熱，而與谭 熔解並凝集同時地’使焊料膏中之熱硬化性 树月曰向集電極之外側參出。藉此， 行集電極盥薄片雷炻層進 ”厚片電極之電性連接，並且以焊料膏中之焊料 159707.doc 201232795 層與熱硬化性樹脂層覆蓋集電極而進行集電極與薄片電極 之機械連接。 先前技術文獻 專利文獻 專利文獻1 :日本專利特開2009-88145號公极 專利文獻2 :曰本專利特開2008-34592號公報 【發明内容】 發明所欲解決之問題 然而，專利文獻2中所揭示之技術中，集電極由焊料層 與熱硬化性樹脂層覆蓋，但薄片電極僅一方之表面之極小 之區域（參照專利文獻2之圖2)被覆蓋，薄片電極之另一方 之表面及側面全部露出。 因此，於例如假設將專利文獻2中所揭示之技術應用於 專利文獻1中所揭示之技術之情形時，專利文獻1之背面電 極型太陽電池單元之電極雖由焊料層與熱硬化性樹脂層覆 蓋，但配線基板之配線之側面露出。 又，專利文獻1中，背面電極型太陽電池單元中不同極 性之電極配置於相鄰之位置，因此於配線基板之配線中， 對相鄰之配線連接不同極性之電極。 因此，即便於將專利文獻2中所揭示之技術應用於專利 文獻1中所揭示之技術中之情'形時，亦存在如下問題，即 若水分浸入至連接有不同極性之電極之配線基板之相鄰之 配線間’則因相鄰之配線間所產生之電場而導致產生構成 配線之金屬析出之現象（離子遷移現象），由此於配線間產 159707.doc 201232795 生短路而導致特性及可靠性下降。此種問題對於設置於室 外而暴露於雨水及高濕度下之太陽電池而言為尤其重要之 問題。 鑒於上述情況，本發明之目的在於提供—種可提高特性 及可靠性之附有配線基板之背面電極型太陽電池單元及附 有配線基板之背面電極型太陽電池單元之製造方法。 解決問題之技術手段 本發明係一種附有配線基板之背面電極型太陽電池單 元，其包含：背面電極型太陽電池單元，其於—方之表面 設置有極性不同之電極；配線基板，其於絕緣性基材之一 方之表面設置有配線；及接著材，其接著背面電極型太陽 電池單元與配線基板；且接著材包含導電性接著材與絕緣 性接著材，電極之表面之至少一部分與配線之表面之至少 一部分經由導電性接著材電性連接，絕緣性接著材覆蓋電 性連接之電極、配線及導電性接著材之外表面，且包含與 配線之側面接觸之部分。 此處，較佳為於本發明之附有配線基板之背面電極型太 陽電池單元中，與絕緣性接著材不同之其他絕緣性接著材 填充於背面電極型太陽電池單元與配線基板間之空間、且 極性不同之電極間及相鄰之配線間之空間。 又，較佳為於本發明之附有配線基板之背面電極型太陽 電池單元中，其他絕緣性接著材配置於與絕緣性接 鄰之位置。 又，较佳為於本發明之附有配線基板之背面電極型太陽 159707.doc 201232795 電池單元中，絕緣性接著材填充於背面電極型太陽電池單 疋與配線基板間之空間、且極性不同之電極間及相鄰之配 線間之空間。 又，本發明係一種太陽電池模組，其係將上述附有配線 • 基板之背面電極型太陽電池單元密封於密封材中而成。 • 又，本發明係一種附有配線基板之背面電極型太陽電池 單兀之製造方法，其包含如下步驟：設置絕緣性接著材， 該絕緣性接著材在設置於背面電極型太陽電池單元之一方 之表面之極性不同之電極之表面及設置於配線基板之絕緣 ί生基材之方之表面之配線之表面之至少一方包含導電性 接著材；以背面電極型太陽電池單元之電極與配線基板之 配線對向之方式使背面電極型太陽電池單元與配線基板重 合，及對包含導電性接著材之絕緣性接著材進行加熱丨且 於加熱之步驟中，以導電性接著材溶融且導電性接著材於 電極之表面之至少一部分與配線之表面之至少一部分之間 凝集，並且絕緣性接著材覆蓋電極、配線及導電性接著材 之外表面且包含與配線之側面接觸之部分的方式配置。 此處，較佳為於本發明之附有配線基板之背面電極型太 陽電池單元之製造方法中，設置之步驟包含於背面電極型 太陽電池單元之極性不同之電極間之表面及配線基板之相 鄰^配線間之絕緣性基材之表面之至少一方設置與絕緣性 接著材不同之其他絕緣性接著材的步驟。 又’較佳為於本發明之附有配線基板之背面電極型太陽 電池單元之製造方法中，其他絕緣性接著材配置於與絕緣 159707.doc 201232795 性接著材相鄰之位置β 又。’。較佳為於本發明之附有g己線基板之f面電極型太陽 電池單7L之製造方法中，於加熱之步驟中，絕緣性接著材 真充於身面電極型太陽電池單元與配線基板間之空間、且 極J·生不同之電極間及相鄰之配線間之空間。 發明之效果 根據本發明’可提供一種可提高特性及可靠性之附有配 、、泉基板之#面電極型太陽電池單元及附有配線基板之背面 電極型太陽電池單元之製造方法。 【實施方式】 以下’對本發明之實施形態進行說明。再者，本發明之 圖式中’同-參照符號表示同一部分或相當部分。又，當 然亦可於後述之各步驟之間包含其他步驟。 田 〈實施形態1> 圖1中表示作為發明之半導體裝置之一例之實施形態k 附有配線基板之背面電極型太陽電池單元的模式性之剖面 圖如圖1所不，附有配線基板之背面電極型太陽電池單 元包含背面電極型太陽電池單元8及配線基板10。 背面電極型太陽電池單元8包含半導體基⑹，並且包含 設置於半導體基板！之-方之表面之„型用電極咖型用電 極7。此處，η型用電極6與卩型用電極7為極性不同之電 極0 配線基板10包含絕緣性基㈣，並且包含設置於絕緣性 基材11之一方之表面in型用配線12與1)型用配線13。此 159707.doc 201232795 處，η型用配線12為與n型用電極6對應之配線，且與〇型用 電極6對向設置。又，ρ型用配線13為與？型用電極7對應之 配線，且與Ρ型用電極7對向設置。 “背面電極型太陽電池單元8與配線基板1〇藉由導電性接 著材21及絕緣性接著材23而接著。 即，背自電極型太陽電池單元型用電極6藉由配線 基板10之η型用配線12與導電性接著材幻而電性連接。 又，背面電極型太陽電池單元8之？型用電極7藉由配線基 板10之ρ型用配線13與導電性接著材21而電性連接。土 再者’藉由導電性接著材21而實現之η型肖電極型 用配線12之電性連接只要η型用電極6之表面之至少一部分 與η型用配線12之表面之至少—部分經由導電性接著材u 電性連接即可。又，藉由導電性接著材21實現之ρ型用電 極7與Ρ型用配線13之電性連接只要ρ型用電極7之表面之至 少一部分與Ρ型用配線13之表面之至少一部分經由導電性 接著材21電性連接即可。 又，背面電極型太陽電池單元8之半導體基板旧配線基 板10之絕緣性基材11藉由絕緣性接著材2 3而機械連接。 於實施形態丨之附有配線基板之背面電極型太陽電池單 元中，電性連接之η型用電極6、n型用配線12及導電性接 著材21之連接體2 4之外表面藉由絕緣性接著材2 3而覆蓋， 並且電性連接之ρ型用電極7、ρ型用配線13及導電性接著 材21之連接體25之外表面亦藉由絕緣性接著材23覆蓋。 因此，η型用電極6、ρ型用電極7、η型用配線12&ρ型用 159707.doc 201232795 配線13各自之外表面由絕緣性接著材23覆蓋。又，將η型 用電極6與η型用配線12電性連接之導電性接著材21及將ρ 型用電極7與ρ型用配線1 3電性連接之導電性接著材21各自 之外表面亦由絕緣性接著材23覆蓋。 藉此’與背面電極型太陽電池單元8之半導體基板1與配 線基板10之絕緣性基材丨丨之間，即便於水分浸入至分別覆 蓋相鄰之連接體24之外表面與連接體25之外表面的絕緣性 接著材23之間之情形時亦可藉由絕緣性接著材23而抑制水 分向連接體24、25側浸入。 又’於驅動實施形態1之附有配線基板之背面電極型太 陽電池單元時，即便於藉由極性不同之相鄰之電極間產生 之電場及/或相鄰之配線間產生之電場而導致構成電極之 金屬及/或構成配線之金屬因離子遷移現象而析出之情形 時’亦可藉由絕緣性接著材23而防止金屬向連接體24、25 之外側移動。 根據以上原因，於實施形態1之附有配線基板之背面電 極型太陽電池單元中，可抑制因水分之浸入及離子遷移現 象所致之極性不同之相鄰之電極間及/或相鄰之配線間之 電性短路的產生，從而可提高特性及可靠性。 又’絕緣性接著材23較佳為覆蓋連接體24及/或連接體 25之外表面中之至少面向極性不同之相鄰之電極間之區域 及相鄰之配線間之區域的外表面之部分。於此情形時，存 在抑制上述離子遷移現象所引起之電性短路之產生而可獲 得特性及可罪性提高之附有配線基板之背面電極型太陽電 159707.doc -10- 201232795 池單元的傾向。 圖2(a)〜圖2(d)中表示對實施形態丨之附有配線基板之背 面電極型太陽電池單元之製造方法之一例進行圖解之模式 性的剖面圖。以下，參照圖2(a)〜圖2(d)對實施形態〖之附 有配線基板之背面電極型太陽電池單元之製造方法之一例 進行說明。 首先，如圖2(a)所示，準備於半導體基板丨之一方之表面 父替設置極性不同之n型用電極6與1)型用電極7之背面電極 型太陽電池單元8。 其次，如圖2(b)所示，於背面電極型太陽電池單元8之 半導體基板1之背面之„型用電極6及？型用電極7各自之表 面設置焊接樹脂20 ^焊接樹脂2〇包含導電性接著材21及絕 緣性接著材23，且具有導電性接著材2丨分散於絕緣性接著 材23中之構成。 作為導電性接著材21，可使用例如焊料粒子等導電性物 質。作為絕緣性接著材23，可使用將選自由例如環氧樹 脂、丙烯酸系樹脂及胺酯樹脂所組成之群中之至少丨種作 為樹脂成分而包含的熱硬化型及/或光硬化型之絕緣性樹 脂等。 作為焊接樹脂20之設置方法，可使用例如網版印刷、分 注器塗佈或f墨塗佈等方法，其中較佳為使用網版印刷。 於使用網版印刷之情形時，彳簡#地、低成本且短時間地 設置焊接樹脂20。 再者，本實施形態令’對在背面電極型太陽電池單元8 159707.doc 201232795 之電極上設置焊接樹脂20之情形進行說明名，但既可於配 線基板10之配線上5史置焊接樹脂2〇，亦可於背面電極型太 陽電池單元8之電極上及配線基板1〇之配線上之雙方設置 焊接樹脂20。 其次，如圖2(c)所示，使背面電極型太陽電池單元8與配 線基板10重合。 背面電極型太陽電池單元8與配線基板1〇之重合例如以 如下方式進行，即背面電極型太陽電池單元8in型用電極 6及p型用電極7分別與設置於配線基板1()之絕緣性基材^ 上之η型用配線丨2及p型用配線丨3對向。 ，其次，一面對背面電極型太陽電池單元8與配線基板1〇 進行加壓一面加熱焊接樹脂20。 猎此’如®2⑷所示’焊接樹脂2G巾之導電性接著材21 溶融’炫融之導電性接著材21於背面電極型太陽電池單元 之f•用電極6之表面之至少一部分與配線基板1〇之打型用 配線12之表面之至少—部分之間凝集，並且於背面電極型 太陽電池單S8之p型用電極7之表面之至少—部分與配線 基板10之p型用配線13之表面之至少一部分之間凝集。 又，此時，以覆蓋連接體24及連接體25之各自之外表面之 方式配置絕緣性接著材23。 /其後’於加熱至絕緣性接著材23成為硬化狀態為止之 後，藉由冷卻而使導電性接著材21固1，從而可製作實施 形態1之附有配線基板之背面電極型太陽電池單元。& 再者’上述内容中，作為背面電極型太陽電池單元8， 159707.doc 201232795 可使用例如以如下方式製造之背面電極型太陽電池單元 8 »以下’參照圖3⑷〜圖3(g)之模式剖面圖，對本實施形 態中所使用之背面電極型太陽電池單元8之製造方法p 例進行說明。 • 首先’如圖3(a)所示，準備例如藉由自晶錠進行切割而 ·.於半導體基板1之表面形成有切割痕la之半導體墓板^。作 為半導體基板1，可使用例如包含具有n型或p型之任一者 之導電型之多晶矽或單晶矽等的矽基板。 其次，如圖3(b)所示，去除半導體基板〖之表面之切割 痕la。此處，就切割痕la之去除而言，於例如半導體基板 1包含上述矽基板之情形時，可藉由如下等方式進行，即 以氫氟酸水溶液與硝酸之混合酸或氫氧化鈉等鹼性水溶液 等蝕刻上述切割後之矽基板之表面。 去除切割痕U後之半導體基板丨之大小及形狀亦並無特 別限定，可將半導體基板丨之厚度設為例如5〇 pm以上且 400 μιη以下。 然後，如圖3(c)所示，於半導體基板〗之背面分別形成η 型雜質擴散區域2及ρ型雜質擴散區域3。„型雜質擴散區域 2可藉由例如使用包含η型雜質之氣體之氣相擴散等方法而 形成，ρ型雜質擴散區域3可藉由例如使用包含卩型雜質之 氣體之氣相擴散等方法而形成。 η型雜質擴散區域2及ρ型雜質擴散區域3分別形成為於圖 3之紙面之正面側及/或背面側延伸之帶狀，η型雜質擴散 區域2與ρ型雜質擴散區域3於半導體基板丨之背面交替隔開 159707.doc -13· 201232795 特定間隔而配置β η型雜質擴散區域2包含η型雜質，只要為顯示η型導電型 之區域則無特別限I再者，作為η型雜質，可使用例如 磷等η型雜質。 Ρ型雜質擴散區域3包含ρ型雜質，只要為顯示㈣導電型 之區域則無特別限定。再者，作為ρ型雜質，可使用例如 硼或鋁等ρ型雜質。 ▲作為包含η型雜質之氣體，可使用例如p〇ci3般之包含磷 等η型雜質之氣體’作為包含P型雜質之氣體，可使用例如 ΒβΓ3般之包含硼等Ρ型雜質之氣體。 繼而’如圖3(d)所示，於半導體基板卜背面形成純化[Technical Field] The present invention relates to a method of manufacturing a back electrode type solar cell unit with a wiring board and a back electrode type solar cell unit with a wiring board. [Prior Art] In recent years, in view of the protection of the global environment, the expectation that the solar cell unit that converts solar energy into electric energy is the next generation of energy is rapidly increasing. There are various types of solar cell units, such as those using compound semiconductors or those using organic materials. Currently, solar cell units using Shishi crystals have become mainstream. In other words, the solar cell which is manufactured and sold in a large amount is formed on the surface on the side where the sunlight is incident (the light receiving surface), and the surface on the opposite side to the light receiving surface (back surface) is formed with the P electrode. Electrode type solar cell unit. Further, the development of a back electrode type solar cell in which the n-electrode and the electrode are formed only on the back surface of the solar cell unit without forming an electrode on the light-receiving surface of the solar cell unit is also underway. For example, in the patent document 1 (Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. In the patent document 丨 (JP-A-2009-88 145), the back electrode type solar cell unit and the wiring sheet are connected by the following steps. (1) The step of soldering the electrode portion to the electrode portion by immersing the surface electrode type solar cell unit in a solder bath. (2) A step of applying an acrylic adhesive to a portion other than the electrode on the back surface of the back electrode type by the screen printing type 159707.doc 201232795. (3) A step of providing a back electrode type solar cell unit on the wiring substrate. (4) The step of heating and crimping the back electrode type solar cell unit and the wiring substrate. In the patent document 丨 曰 曰 曰 , , , , , , , , , , , , , , , , 配线 配线 配线 配线 配线 配线 配线 配线 配线 配线 配线 配线 背面 背面 背面 背面 背面 背面 背面 背面 背面 背面 背面 背面 背面 背面 背面 背面 背面 背面The f-surface electrode type solar cell unit is connected to the wiring board and mechanically connected by an insulating material containing an acrylic adhesive. In the patent document 曰 (Japanese Patent Laid-Open Publication No.), the conductive adhesive member and the insulating adhesive member are separately placed. Therefore, there is a case where a conductive material and a material-based adhesive material are formed between the conductive material and the material. (4). When a gap is formed between the conductive material and the insulating material, there is a problem that the stability of the mechanical connection between the back electrode type solar cell and the wiring substrate is poor and the reliability is lowered. In the case of the use of a thermosetting conductive tan paste, the collector and the sheet electrode of the double-sided electrode type battery unit are electrically-exposed by the use of a thermosetting conductive tan paste. The technology of sexual connection and mechanical connection. ~ Sheet: By placing a thermosetting conductive material f between the collector and the electrode of the double-sided electrode type solar cell unit and heating it, and melting and agglutinating with tan, simultaneously making the thermosetting tree in the solder paste The meniscus is introduced to the outside of the collector. Thereby, the collector electrode 盥 sheet thunder layer is electrically connected to the slab electrode, and the collector and the sheet electrode are performed by covering the collector with the solder 159707.doc 201232795 layer and the thermosetting resin layer in the solder paste. [Technical Problem] The prior art document Patent Document Patent Document 1: Japanese Patent Laid-Open Publication No. 2009-88145, No. JP-A No. 2008-34592. In the technique disclosed in 2, the collector is covered with a solder layer and a thermosetting resin layer, but a region where only one surface of the sheet electrode is extremely small (see FIG. 2 of Patent Document 2) is covered, and the other of the sheet electrodes is covered. The surface and the side surface are all exposed. Therefore, for example, when the technique disclosed in Patent Document 2 is applied to the technique disclosed in Patent Document 1, the electrode of the back electrode type solar cell unit of Patent Document 1 is made of a solder layer. It is covered with a thermosetting resin layer, but the side surface of the wiring of the wiring board is exposed. Further, in Patent Document 1, the back electrode type solar cell unit is used. Since the electrodes of the same polarity are disposed at the adjacent positions, the electrodes of different polarities are connected to the adjacent wirings in the wiring of the wiring board. Therefore, even the technique disclosed in Patent Document 2 is applied to Patent Document 1. In the case of the disclosed technology, there is also a problem that if the water is immersed in the adjacent wiring between the wiring substrates to which the electrodes of different polarities are connected, the electric field generated by the adjacent wirings is generated. The phenomenon of metal deposition in the wiring (ion migration phenomenon) causes a short circuit in the wiring room to produce a short circuit, which causes a decrease in characteristics and reliability. This problem is caused by the sun exposed to rain and high humidity. In view of the above, it is an object of the present invention to provide a back electrode type solar cell unit with a wiring board and a back electrode type solar cell with a wiring board which can improve characteristics and reliability. Manufacturing method of unit. Technical means for solving the problem The present invention is a back electrode type solar with a wiring substrate a battery unit comprising: a back electrode type solar cell unit having electrodes having different polarities on a surface thereof; a wiring substrate provided with wiring on one surface of the insulating substrate; and a backing material followed by a back surface An electrode type solar cell unit and a wiring board; and the bonding material includes a conductive material and an insulating material, at least a part of the surface of the electrode and at least a part of the surface of the wiring are electrically connected via a conductive material, and the insulating material is covered. The electrode, the wiring, and the outer surface of the conductive material are electrically connected, and include a portion in contact with the side surface of the wiring. Here, in the back electrode type solar battery cell with the wiring substrate of the present invention, The other insulating substrate having a different insulating material is filled in a space between the back electrode type solar cell and the wiring substrate, and between the electrodes having different polarities and between the adjacent wirings. Further, in the back electrode type solar cell unit with the wiring board of the present invention, it is preferable that the other insulating material is disposed adjacent to the insulating property. Further, in the battery unit of the back electrode type solar 159707.doc 201232795 with the wiring board of the present invention, the insulating material is filled in the space between the back electrode type solar cell unit and the wiring board, and the polarity is different. The space between the electrodes and the adjacent wiring. Further, the present invention relates to a solar battery module in which a back electrode type solar battery unit having a wiring/substrate attached thereto is sealed in a sealing material. Further, the present invention relates to a method of manufacturing a back electrode type solar cell unit with a wiring board, comprising the steps of providing an insulating back material provided on one side of a back electrode type solar cell unit. At least one of the surface of the electrode having different polarities on the surface and the surface of the wiring provided on the surface of the insulating substrate of the wiring substrate includes a conductive adhesive; the electrode of the solar cell of the back electrode type and the wiring substrate In the wiring alignment method, the back electrode type solar cell unit is overlapped with the wiring substrate, and the insulating binder including the conductive back material is heated, and in the step of heating, the conductive bonding material is melted and the conductive bonding material is used. At least a part of the surface of the electrode is agglomerated between at least a part of the surface of the wiring, and the insulating material covers the electrode, the wiring, and the outer surface of the conductive material and includes a portion in contact with the side surface of the wiring. Here, preferably, in the method of manufacturing a back electrode type solar cell unit with a wiring board according to the present invention, the step of providing is included in the surface between the electrodes having different polarities of the back electrode type solar cell unit and the phase of the wiring substrate. At least one of the surfaces of the insulating base material in the adjacent wiring compartment is provided with a different insulating binder different from the insulating binder. Further, in the method of manufacturing a back electrode type solar cell unit with a wiring board according to the present invention, the other insulating material is disposed at a position β adjacent to the insulating material 159707.doc 201232795. ’. In the manufacturing method of the f-surface electrode type solar cell single 7L with the g-line substrate of the present invention, in the heating step, the insulating back material is really filled in the body electrode type solar cell unit and the wiring substrate. The space between the electrodes and the space between the electrodes and the adjacent wirings. Advantageous Effects of Invention According to the present invention, it is possible to provide a method of manufacturing a back surface electrode type solar cell including a spring substrate and a wiring substrate, which can improve the characteristics and reliability. [Embodiment] Hereinafter, embodiments of the present invention will be described. In the drawings, the same reference numerals refer to the same or the equivalent parts. Further, it is of course possible to include other steps between the steps described later. [Embodiment 1] FIG. 1 is a view showing an embodiment of a semiconductor device according to the invention. FIG. 1 is a schematic cross-sectional view showing a back electrode type solar cell in which a wiring board is attached, and is attached to the back surface of the wiring substrate. The electrode type solar battery unit includes a back electrode type solar battery unit 8 and a wiring board 10. The back electrode type solar cell unit 8 includes a semiconductor base (6) and is provided on the semiconductor substrate! The electrode for electrode type 7 of the surface of the square electrode. Here, the electrode for the n-type electrode 6 and the electrode for the 卩 type electrode are electrodes having different polarities. The wiring substrate 10 includes an insulating base (four) and is provided in the insulating layer. The surface in-type wiring 12 and the 1)-type wiring 13 are one of the surface of the substrate 11 . In the case of 159707.doc 201232795, the n-type wiring 12 is a wiring corresponding to the n-type electrode 6 and is connected to the 〇-type electrode. In addition, the p-type wiring 13 is a wiring corresponding to the ?-type electrode 7 and is disposed opposite to the Ρ-type electrode 7. "The back-electrode type solar cell 8 and the wiring substrate 1 are electrically conductive. The adhesive material 21 and the insulating material 23 are next. In other words, the electrode-type solar battery cell type electrode 6 is electrically connected to the conductive material via the n-type wiring 12 of the wiring substrate 10. Also, the back electrode type solar battery unit 8? The pattern electrode 7 is electrically connected to the conductive adhesive member 21 via the p-type wiring 13 of the wiring board 10. The electric connection of the n-type SHA-electrode type wiring 12 realized by the conductive adhesive material 21 is at least a part of the surface of the n-type electrode 6 and at least a part of the surface of the n-type wiring 12 The conductive material u can be electrically connected. Further, the p-type electrode 7 and the Ρ-type wiring 13 which are realized by the conductive adhesive material 21 are electrically connected to each other, and at least a part of the surface of the p-type electrode 7 and at least a part of the surface of the Ρ-type wiring 13 are electrically conductive. The adhesive material 21 can be electrically connected. Further, the insulating base material 11 of the semiconductor substrate old wiring board 10 of the back electrode type solar battery unit 8 is mechanically connected by the insulating material member 23. In the back electrode type solar cell in which the wiring board is attached, the outer surface of the electrically connected n-type electrode 6, the n-type wiring 12, and the conductive member 21 is insulated by the outer surface. The outer surface of the connection material 23 is covered with the insulating material 23, and the outer surface of the connection body 25 of the p-type electrode 7 and the p-type wiring 13 and the conductive adhesive member 21 which are electrically connected is also covered by the insulating material 23. Therefore, the outer surfaces of the n-type electrode 6, the p-type electrode 7, the n-type wiring 12, and the p-type 159707.doc 201232795 wiring 13 are covered with an insulating material 23. Further, the conductive adhesive member 21 that electrically connects the n-type electrode 6 and the n-type wiring 12 and the outer surface of each of the conductive adhesive members 21 that electrically connect the p-type electrode 7 and the p-type wiring 13 are electrically connected. It is also covered by an insulating material 23. Thereby, the surface between the semiconductor substrate 1 of the back electrode type solar cell 8 and the insulating substrate 配线 of the wiring substrate 10 is immersed in the outer surface of the adjacent connecting body 24 and the connecting body 25, respectively. In the case of the insulating material 23 on the outer surface, the insulating material 23 can be used to suppress the infiltration of moisture into the sides of the connecting bodies 24 and 25. Further, when the solar cell of the back electrode type having the wiring board of the first embodiment is driven, the electric field generated between the adjacent electrodes having different polarities and/or the electric field generated between the adjacent wirings are formed. When the metal of the electrode and/or the metal constituting the wiring is precipitated by the ion migration phenomenon, the metal can be prevented from moving to the outside of the connectors 24 and 25 by the insulating material 23 . In the back electrode type solar cell unit with the wiring board according to the first embodiment, it is possible to suppress the adjacent electrodes and/or adjacent wirings having different polarities due to the infiltration of water and the phenomenon of ion migration. The occurrence of an electrical short circuit between them can improve characteristics and reliability. Further, the insulating insulating material 23 preferably covers at least the outer surface of the outer surface of the connecting body 24 and/or the connecting body 25 facing at least the adjacent electrodes of different polarity and the outer surface of the adjacent wiring line. . In this case, there is a tendency to suppress the occurrence of an electrical short circuit caused by the above-described ion migration phenomenon, and to obtain a back electrode type solar cell 159707.doc -10- 201232795 cell unit with a wiring board having improved characteristics and sinfulness. . 2(a) to 2(d) are schematic cross-sectional views showing an example of a method of manufacturing a back electrode type solar cell in which a wiring board is attached in the embodiment. Hereinafter, an example of a method of manufacturing a back electrode type solar cell with a wiring board according to the embodiment will be described with reference to Figs. 2(a) to 2(d). First, as shown in Fig. 2(a), the surface of one of the semiconductor substrates is prepared by the father of the n-type electrode 6 having different polarities and the back electrode type solar cell 8 of the type 1 electrode 7. Next, as shown in Fig. 2(b), the surface of each of the type electrode 6 and the type electrode 7 on the back surface of the semiconductor substrate 1 of the back electrode type solar cell unit 8 is provided with a solder resin 20 ^ solder resin 2 The conductive adhesive material 21 and the insulating adhesive material 23 have a structure in which the conductive adhesive material 2 is dispersed in the insulating adhesive material 23. As the conductive adhesive material 21, for example, a conductive material such as solder particles can be used. As the insulating material 23, a thermosetting type and/or a photocuring type insulating resin containing at least one selected from the group consisting of, for example, an epoxy resin, an acrylic resin, and an amine ester resin as a resin component can be used. As a method of disposing the solder resin 20, a method such as screen printing, dispenser coating, or f ink coating may be used, and among them, screen printing is preferably used. In the case of using screen printing, simplification The welding resin 20 is provided at a low cost and for a short period of time. Further, in the present embodiment, the case where the solder resin 20 is provided on the electrode of the back electrode type solar battery unit 8 159707.doc 201232795 Although the name of the line is described, the solder resin 20 may be provided on both the wiring of the wiring substrate 10 and the electrode of the back electrode type solar cell unit 8 and the wiring of the wiring board 1 . Next, as shown in Fig. 2(c), the back electrode type solar cell unit 8 and the wiring board 10 are overlapped. The overlap of the back electrode type solar cell unit 8 and the wiring board 1 is performed, for example, as follows: The battery unit 8in-type electrode 6 and the p-type electrode 7 are respectively opposed to the n-type wiring 丨2 and the p-type wiring 丨3 provided on the insulating substrate 2 of the wiring board 1 (), and secondly, The surface of the back electrode type solar cell unit 8 and the wiring substrate 1 are heated while the solder resin 20 is heated. The soldering resin 2G of the soldering resin 2G towel is melted and the conductivity of the soldering is followed by the '2' (4) The material 21 is agglomerated between at least a portion of the surface of the electrode electrode 6 of the back electrode type solar cell unit and at least a portion of the surface of the pattern wiring 12 of the wiring substrate 1 and is formed on the back electrode type solar cell sheet S8. P type At least a portion of the surface of the electrode 7 is agglomerated with at least a portion of the surface of the p-type wiring 13 of the wiring substrate 10. Further, at this time, insulation is disposed so as to cover the outer surfaces of the connecting body 24 and the connecting body 25. After the heating of the insulating material 23 to the cured state, the conductive material 21 is solidified by cooling, and the back electrode with the wiring substrate of the first embodiment can be produced. In the above, as the back electrode type solar battery unit 8, 159707.doc 201232795, for example, a back electrode type solar battery unit 8 manufactured as follows can be used. The following 'refer to FIG. 3(4) to FIG. In the mode cross-sectional view of Fig. 3(g), a method of manufacturing the back electrode type solar cell unit 8 used in the present embodiment will be described. • First, as shown in Fig. 3(a), a semiconductor tomb plate having a cut mark la formed on the surface of the semiconductor substrate 1 is prepared by, for example, cutting from an ingot. As the semiconductor substrate 1, for example, a germanium substrate including a polycrystalline germanium having a conductivity type of either an n-type or a p-type or a single crystal germanium can be used. Next, as shown in Fig. 3 (b), the cut marks la on the surface of the semiconductor substrate are removed. Here, in the case where the semiconductor substrate 1 includes the above-described ruthenium substrate, for example, the removal of the dicing layer 1 can be carried out by using a mixed acid of hydrofluoric acid aqueous solution and nitric acid or a base such as sodium hydroxide. An aqueous solution or the like etches the surface of the diced substrate after the dicing. The size and shape of the semiconductor substrate 后 after removing the dicing marks U are not particularly limited, and the thickness of the semiconductor substrate 丨 can be, for example, 5 pm or more and 400 μm or less. Then, as shown in FIG. 3(c), an n-type impurity diffusion region 2 and a p-type impurity diffusion region 3 are formed on the back surface of the semiconductor substrate, respectively. The type-type impurity diffusion region 2 can be formed by, for example, a gas phase diffusion using a gas containing an n-type impurity, and the p-type impurity diffusion region 3 can be formed by, for example, gas phase diffusion using a gas containing a cerium-type impurity. The n-type impurity diffusion region 2 and the p-type impurity diffusion region 3 are formed in a strip shape extending on the front side and/or the back side of the paper surface of FIG. 3, respectively, and the n-type impurity diffusion region 2 and the p-type impurity diffusion region 3 are formed. The back surface of the semiconductor substrate is alternately separated by 159707.doc -13·201232795. The β-n-type impurity diffusion region 2 is provided with an n-type impurity, and is not particularly limited as long as it is an η-type conductivity region. As the p-type impurity, for example, boron or aluminum can be used as the p-type impurity, and the p-type impurity is not particularly limited as long as it is a p-type impurity. Ρ-type impurity ▲ As the gas containing the n-type impurity, for example, a gas containing an n-type impurity such as phosphorus, such as p〇ci3, can be used as the gas containing the P-type impurity, and for example, ΒβΓ3 can be used. Ρ-type impurity of boron-containing gas, etc. In turn 'in FIG. 3 (d), the back surface of the semiconductor substrate to form purified Bu
膜 此處，鈍化膜4可藉由例如熱氧化法或電漿CVD (Chemical Vapor Dep〇siu〇n，化學氣象沈積）法等方法而形 成。 乍為鈍化膜4 ’可使用例如氧化石夕膜、氮化石夕膜、或氧 化石夕膜與氣化石夕膜之積層體等，但並不限定於該等。 鈍化膜4之厚度可設為例如〇〇5 μηι以上且i μηι以下尤 佳為設為0.2 μιη左右。 其次，如圖3(e)所示，於半導體基板丨之受光面之整個面 形成紋理構造等凹凸構造之後，於該凹凸構造上形成反射 防止膜5。 紋理構造可藉由例如蝕刻半導體基板1之受光面而形 成。例如於半導體基板丨為矽基板之情形時，可藉由如下 方法形成，即例如使用將向氫氧化鈉或氫氧化鉀等鹼性水 159707.doc -14- 201232795 溶液添加異丙醇而成之液體加熱至例如7Gt以上且8〇t：以 下而成的蝕刻液而蝕刻半導體基板1之受光面。 反射防止膜5可藉由例如電漿CVD法等而形成。再者， 作為反射防止膜5可使用例如氮化矽膜等，但並不限定於 • 此0 ·#次’如圖3(f)所示，藉由去除半導體基⑹之背面之純 化膜4之一部分而形成接觸孔4a及接觸孔4b。此處，接觸 孔4a以使n型雜質擴散區域2之表面之至少一部分露出之方 式形成，接觸孔4b以使Ρ型雜質擴散區域3之表面之至少一 部分露出之方式形成。 再者，接觸孔4a及接觸孔仆可分別藉由如下方法形成， 即例如：使用光微影技術而於鈍化膜4上形成在與接觸孔 4a及接觸孔仆之形成部位對應之部分具有開口之抗蝕圖案 之後，自抗蝕圖案之開口藉由蝕刻等去除鈍化膜4之方 法，或於與接觸孔4a及接觸孔4b之形成部位對應之鈍化膜 4之部分塗佈蝕刻膏之後，藉由加熱而蝕刻鈍化膜*進行去 除之方法等。 然後，如圖3(g)所示，形成通過接觸孔4a接觸於n型雜質 擴散區域2之n型用電極6、及通過接觸孔4b接觸於p型雜質 擴散區域3之ρ型用電極7，藉此製作背面電極型太陽電池 單元8。 ' 作為η型用電極6及ρ型用電極7，可使用例如包含銀等金 屬之電極。η型用電極6及ρ型用電極面7分別形成為於圖3 之紙之正面側及/或背面側延伸之帶狀，^型用電極6及卩型 159707.doc 201232795 用電極7以分別冑過設置於純化膜*之開口部並沿著半導體 :板之奇面之n型雜質擴散區域2及^型雜質擴散區域3而 刀别接觸於11型_質擴散區域2及？型雜質擴散區域3之方 形成。 ^中表不自背面侧觀察以上述方式製造之背面電極型 陽電池單元8時之-例之模式性的俯視圖。如圖4所示， η型用電極6及?型用電極7分別形成為梳形狀，以梳形狀之 用電極6之相當於梳齒之部分與梳形狀之ρ型肖電極7之 相當於梳齒之部分一個個地交替唾合之方式而配置η型用 2極6及_用電極7。其結果，梳形狀之η型用電“之相 :於梳齒之部分與梳形狀之ρ型用電極7之相當於梳齒之部 分分別一個個地交替隔開特定之間隔而配置。 背面電極型太陽電池單元8之背面之η型用電極6及ρ型用 電極7各自之形狀及配置並不限定於圖*所示之構成，只要 為可與配線基板此11型用配線I2及Ρ型絲線Uf性連接 之形狀及配置即可。 圓5中表示自背面側觀察背面電極型太陽電池單元8時之 另例之模式性的俯視圖。如圖5所示，n型用電極6&p型 用電極7分別形成為於同一方向伸長(於圖5之上下方向伸 長）之帶狀，於半導體基板1之背面於與上述伸長方向正交 之方向分別一個個地交替配置。 圖6中表示自背面側觀察背面電極型太陽電池單元8時之 例之模式性之俯視圓。如圖6所示，11型用電極6及ρ型 用電極7分別形成為點狀，點狀型用電極6之行（於圖6 159707.doc 201232795 之上下方向）及點狀之P型用電極7之行（於圖6之上下方向伸 長別於半導體基板1之背面1行行地交替配置。 又，上述内容中，作為配線基板丨〇，可使用例如如下配 線基板10。 圖7中表示自配線之設置側觀察本實施形態中所使用之 配線基板之一例時的模式性之俯視圖。如圖7所示，配線 基板10包含絕緣性基材丨丨與設置於絕緣性基材丨丨表面上之 包含η型用配線12、p型用配線13及連接用配線14之配線 16 ° η型用配線12 ' ρ型用配線13及連接用配線14分別為導電 性’ η型用配線12及卩型用配線13分別形成為包含複數個長 方形於與長方形之長度方向正交之方向排列之形狀的梳形 狀。另一方面，連接用配線14設為帶狀。又，分別位於配 線基板10之末端之η型用配線12a及ρ型用配線13a以外之相 鄰之η型用配線12與？型用配線13藉由連接用配線14而電性 連接。 於配線基板10中，以梳形狀之η型用配線12之相當於梳 齒（長方形）之部分與梳形狀之ρ型用配線13之相當於梳齒 (長方形）之部分一個個地交替嚙合之方式分別配置η型用配 線12及ρ型用配線13。其結果，梳形狀之η型用配線12之相 當於梳齒之部分與梳形狀之Ρ型用配線13之相當於梳齒之 部分分別一個個地交替隔開特定之間隔而配置。 圖8中表示沿著圖7之VIII_VIII之模式性之剖面圖。如圖 8所示’於配線基板10中，僅於絕緣性基材11之一方之表 159707.doc -17· 201232795 面上設置η型用配線12及p型用配線13。 作為絕緣性基材11之材質，只要為電絕緣性之材質則可 無特別限定地使用，可使用包含選自由例如聚對苯二甲酸 乙二醋（PET，Polyethylene terephthalate)、聚萘二甲酸二 乙醋（PEN，Polyethylene naphthalate)、聚苯硫趟（pps， Polyphenylene sulfide)、聚氟乙烯（PVF，Polyvinyl fluoride) 及聚醯亞胺（Polyimide)所組成之群中之至少1種樹脂的材 質。 絕緣性基材11之厚度並無特別限定，可設為例如25 μιη 以上且15 0 μιη以下。 絕緣性基材11既可為僅包含1層之單層構造，亦可為包 含2層以上之複數層構造。 作為配線16之材質，只要為導電性之材質則可無特別限 定地使用’可使用包含選自由例如銅、鋁及銀所組成之群 中之至少1種的金屬等。 配線16之厚度亦並無特別限定，可設為例如1〇 μιη以上 且50 μιη以下。 配線16之形狀亦並不限定於上述形狀，當然可適當設 定。 亦可於配線16之至少一部分之表面設置包含選自由例如 鎳（Ni)、金（Au)、鉑（Pt)、鈀（Pd)、銀（Ag)、錫（sn)、“外 焊料、及IT0(Ind_ Tin 〇xide ’氧化銦錫)所組成之群中 之至少i之導電性物質。於此情形時，存在可使配線基板 10之配線16與後述之背面電極型太陽電池單元8之電極之 159707.doc -18- 201232795 電性連接良好、提高配線16之耐候性之傾向。 亦可為對配線16之至少一部分之表面實施例如防銹處理 或黑化處理等表面處理。 配線16既可為僅包含1層之單層構造’亦可為包含2層以 上之複數層構造。 以下對圖7及圖8所示之構成之配線基板1〇之製造方法之 一例進行說明。 首先’準備例如PEN膜等絕緣性基材11，於該絕緣性基 材11之一方之表面之整個面貼合例如金屬箔或金屬板等導 電性物質。例如抽出切割成特定寬度之絕緣性基材之捲， 於絕緣性基材之一方之表面塗佈接著劑，使較絕緣性基材 之寬度稍小地切割之金屬箔之捲重合並進行加壓、加熱， 藉此進行貼合β 然後’藉由光蝕刻等去除貼合於絕緣性基材丨丨之表面之 導電性物質之一部分而使導電性物質圖案化，藉此於絕緣 性基材11之表面上形成包含經圖案化之導電性物質之包含 n型用配線12、P型用配線13及連接用配線14等的配線16。 根據以上内容，可製作圖7及圖8所示之構成之配線基板 10。圖9中表示實施形態！之附有配線基板之背面電極型太 陽電池單元之模式性之俯視圖。如圖9所示，以使作為背 面電極型太陽電池單元8之電極設置側之表面之背面與配 線基板10之配線設置側之表面對向之方式設置背面電極型 太陽電池單元8與配線基板10。此處，於i片配線基板1〇上 設置16片背面電極型太陽電池單元8，但當然並不限定於 159707.doc 201232795 該構成，例如亦可設為於〗片配線基板1〇上設置丨片背面電 極型太陽電池單元8之構成。 實施形態1之附有配線基板之背面電極型太陽電池單元 例如圖10之模式剖面圖所示，藉由密封於正面保護材”與 背面保護材19間之密封材丨8中而製作太陽電池模組。 圖10所示之太陽電池模組可藉由例如以下方法進行，即 於玻璃等正面保護材17中所包含之乙稀醋酸乙烯SI(EVA， ethylene vinyl acetate)等密封材18與聚酯膜等背面保護材 19中所包含之EVA等密封材18之間挾入附有配線基板之背 面電極型太陽電池單元，對正面保護材17與背面保護材19 之間一面加壓一面加熱，使該等密封材18熔融之後硬化而 一體化。 又，本發明中之背面電極型太陽電池單元之概念中，不 僅包含僅於上述基板之一方之正面側（背面側）形成有η型用 電極及Ρ型用電極之雙方之構成，亦包含所有Μψτ(ΜεΜ Wrap Through，金屬貫穿式背電極）單元（於設置於基板之 貫通孔配置電極之一部分之構成的太陽電池單元）等所謂 背部接觸型太陽電池單元（自太陽電池單元之與受光面側 為相反側之彦面側取出電流之構造的太陽電池單元）。 〈實施形態2>Film Here, the passivation film 4 can be formed by a method such as a thermal oxidation method or a plasma CVD (Chemical Vapor Dep〇siu〇n) method. As the passivation film 4', for example, a oxidized stone film, a nitride film, or a laminated body of an oxide film and a gasification film may be used, but it is not limited thereto. The thickness of the passivation film 4 can be, for example, 〇〇5 μηι or more, and i μηι or less is preferably about 0.2 μηη. Then, as shown in Fig. 3(e), after the uneven structure such as a texture structure is formed on the entire surface of the light-receiving surface of the semiconductor substrate, the anti-reflection film 5 is formed on the uneven structure. The texture structure can be formed by, for example, etching the light receiving surface of the semiconductor substrate 1. For example, when the semiconductor substrate is a ruthenium substrate, it can be formed by, for example, adding isopropyl alcohol to a solution of alkaline water 159707.doc -14-201232795 such as sodium hydroxide or potassium hydroxide. The liquid is heated to an etching liquid of, for example, 7 Gt or more and 8 〇t: or less to etch the light-receiving surface of the semiconductor substrate 1. The anti-reflection film 5 can be formed by, for example, a plasma CVD method or the like. Further, as the anti-reflection film 5, for example, a tantalum nitride film or the like can be used, but it is not limited to the case where the film is removed from the back surface of the semiconductor substrate (6) as shown in Fig. 3 (f). A part of the contact hole 4a and the contact hole 4b are formed. Here, the contact hole 4a is formed such that at least a part of the surface of the n-type impurity diffusion region 2 is exposed, and the contact hole 4b is formed to expose at least a part of the surface of the erbium-type impurity diffusion region 3. Further, the contact hole 4a and the contact hole may be formed by, for example, using an optical lithography technique to form an opening on the passivation film 4 at a portion corresponding to the contact hole 4a and the portion where the contact hole is formed. After the resist pattern, the passivation film 4 is removed from the opening of the resist pattern by etching or the like, or after the etching paste is applied to the portion of the passivation film 4 corresponding to the contact hole 4a and the contact hole 4b. A method of removing a passivation film* by heating and removing it. Then, as shown in FIG. 3(g), the n-type electrode 6 which is in contact with the n-type impurity diffusion region 2 through the contact hole 4a, and the p-type electrode 7 which contacts the p-type impurity diffusion region 3 through the contact hole 4b are formed. Thereby, the back electrode type solar cell unit 8 is produced. As the n-type electrode 6 and the p-type electrode 7, for example, an electrode including a metal such as silver can be used. The n-type electrode 6 and the p-type electrode surface 7 are formed in a strip shape extending on the front side and/or the back side of the paper of Fig. 3, and the electrode 6 for the type and the electrode 7 for the type 159707.doc 201232795 are respectively used. The n-type impurity diffusion region 2 and the impurity diffusion region 3 which are provided in the opening of the purification film* and along the odd surface of the semiconductor:plate are in contact with the 11-type diffusion region 2 and the ? The type impurity diffusion region 3 is formed. The middle table is a schematic plan view of an example in which the back electrode type anode battery unit 8 manufactured in the above manner is not observed from the back side. As shown in Fig. 4, the n-type electrode 6 and the ?-type electrode 7 are each formed in a comb shape, and the equivalent of the comb-shaped electrode 6 corresponding to the comb-shaped portion and the comb-shaped p-type SHA-electrode 7 The n-type 6-pole 6 and the _-electrode 7 are disposed in such a manner that the teeth are alternately sprinkled one by one. As a result, the phase of the n-type electric power of the comb shape is arranged such that the portion corresponding to the comb teeth and the portion corresponding to the comb teeth of the comb-shaped p-type electrode 7 are alternately spaced one by one at a predetermined interval. The shape and arrangement of the n-type electrode 6 and the p-type electrode 7 on the back surface of the solar battery cell 8 are not limited to those shown in FIG. *, and the wiring type I2 and the type 11 can be used together with the wiring board. The shape and arrangement of the wire Uf connection may be a circle. The circle 5 shows a schematic plan view of another example when the back electrode type solar cell 8 is viewed from the back side. As shown in Fig. 5, the n-type electrode 6 & p type Each of the electrodes 7 is formed in a strip shape elongated in the same direction (elongated in the lower direction in FIG. 5), and is alternately arranged one by one on the back surface of the semiconductor substrate 1 in the direction orthogonal to the extending direction. As shown in FIG. 6, the 11-type electrode 6 and the p-type electrode 7 are each formed in a dot shape, and the dot-shaped electrode 6 is formed as seen in the back surface side of the back electrode type solar cell 8. OK (above Figure 6 159707.doc 201232795 The direction) and the dot-shaped P-type electrode 7 are arranged alternately in the upper-lower direction of FIG. 6 than the back surface of the semiconductor substrate 1. In the above, as the wiring board, for example, for example, The wiring board 10 is as follows. Fig. 7 is a schematic plan view showing an example of a wiring board used in the present embodiment from the side where the wiring is provided. As shown in Fig. 7, the wiring board 10 includes an insulating substrate and The wiring 16 including the n-type wiring 12, the p-type wiring 13 and the connection wiring 14 provided on the surface of the insulating substrate 16, the n-type wiring 12', the p-type wiring 13 and the connection wiring 14 are respectively The conductive 'n-type wiring 12 and the 卩-shaped wiring 13 are each formed into a comb shape including a plurality of rectangles arranged in a direction orthogonal to the longitudinal direction of the rectangle. On the other hand, the connection wiring 14 is formed in a strip shape. In addition, the n-type wiring 12 and the adjacent wirings 13 which are adjacent to the n-type wiring 12a and the p-type wiring 13a at the end of the wiring board 10 are electrically connected to the ?-type wiring 13 by the connection wiring 14. Wiring substrate 10 The n-type is alternately arranged so that the comb-tooth (rectangular) portion of the comb-shaped n-type wiring 12 and the comb-shaped (rectangular) portion of the comb-shaped p-type wiring 13 are alternately meshed one by one. The wiring 12 and the p-type wiring 13 are used. As a result, the portion corresponding to the comb teeth of the comb-shaped n-type wiring 12 and the comb-shaped portion of the comb-shaped wiring 13 are alternately arranged one by one. Fig. 8 is a schematic cross-sectional view taken along line VIII_VIII of Fig. 7. As shown in Fig. 8, in the wiring substrate 10, only one of the insulating substrates 11 is shown in Table 159707.doc. -17· 201232795 The n-type wiring 12 and the p-type wiring 13 are provided on the surface. The material of the insulating base material 11 is not particularly limited as long as it is an electrically insulating material, and may be selected from, for example, polyethylene terephthalate (PET), polyethylene terephthalate or polyethylene naphthalate. A material of at least one resin selected from the group consisting of PEN (Polyethylene naphthalate), polyphenylene sulfide (PPS), polyvinyl fluoride (PVF), and polyimide (Polyimide). The thickness of the insulating base material 11 is not particularly limited, and may be, for example, 25 μm or more and 150 μm or less. The insulating base material 11 may have a single layer structure including only one layer, or a multiple layer structure including two or more layers. The material of the wiring 16 is not particularly limited as long as it is made of a conductive material. A metal containing at least one selected from the group consisting of, for example, copper, aluminum, and silver can be used. The thickness of the wiring 16 is not particularly limited, and may be, for example, 1 μm or more and 50 μm or less. The shape of the wiring 16 is not limited to the above shape, and may of course be appropriately set. The surface of at least a portion of the wiring 16 may be provided to include, for example, nickel (Ni), gold (Au), platinum (Pt), palladium (Pd), silver (Ag), tin (sn), "outer solder, and Conductive material of at least i of the group of IT0 (Ind_ Tin idexide 'indium tin oxide). In this case, the wiring 16 of the wiring substrate 10 and the electrode of the back electrode type solar cell 8 to be described later may be present. 159707.doc -18- 201232795 The electrical connection is good and the weather resistance of the wiring 16 is improved. The surface of at least a part of the wiring 16 may be subjected to a surface treatment such as rustproof treatment or blackening treatment. The single-layer structure including only one layer' may be a multi-layer structure including two or more layers. Hereinafter, an example of a method of manufacturing the wiring board 1A having the configuration shown in FIGS. 7 and 8 will be described. An insulating substrate 11 such as a PEN film is bonded to a conductive material such as a metal foil or a metal plate on the entire surface of one surface of the insulating substrate 11. For example, a roll of an insulating substrate cut into a specific width is taken out. In one of the insulating substrates The surface is coated with an adhesive, and the roll of the metal foil which is slightly smaller than the width of the insulating base material is combined and pressed and heated to bond the β and then removed by thermal etching or the like. The conductive material is partially patterned on the surface of the substrate ,, and the n-type wiring 12 and the P-type including the patterned conductive material are formed on the surface of the insulating substrate 11 . The wiring 16 such as the wiring 13 and the connection wiring 14 is used. According to the above, the wiring board 10 having the configuration shown in FIGS. 7 and 8 can be produced. FIG. 9 shows the back electrode type solar with the wiring board in the embodiment. As shown in FIG. 9, the back surface electrode type is provided so that the back surface of the surface on the electrode installation side of the back electrode type solar cell unit 8 faces the surface on the wiring installation side of the wiring board 10. The solar battery unit 8 and the wiring board 10. Here, the 16 back electrode type solar battery cells 8 are provided on the i-type wiring board 1 ,, but of course, the configuration is not limited to 159707.doc 201232795, for example, It is possible to provide a configuration in which the back surface electrode type solar battery unit 8 is provided on the sheet wiring board 1A. The back electrode type solar battery unit with the wiring board according to the first embodiment is shown in a schematic cross-sectional view of FIG. A solar cell module is produced by sealing the material 8 between the front protective material and the back protective material 19. The solar cell module shown in FIG. 10 can be formed, for example, by a sealing material 18 such as ethylene vinyl acetate (EVA) and a polyester film contained in the front protective material 17 such as glass. The back electrode type solar cell unit with the wiring board is interposed between the sealing material 18 such as EVA included in the back surface protective material 19, and the front surface protective material 17 and the back surface protective material 19 are heated while being pressurized, so that the heat is applied thereto. After the sealing material 18 is melted, it is hardened and integrated. In addition, the concept of the back electrode type solar cell of the present invention includes not only the n-type electrode and the Ρ-type electrode but also the front side (back side) of one of the substrates. A so-called back contact type solar cell unit (from the side of the solar cell unit and the light receiving surface side) such as a Μ Μ Μ rap rap rap 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属 金属The solar cell unit of the structure in which the current is taken out from the side of the side of the opposite side. <Embodiment 2>
I 圖11中表示作為本發明之半導體裝置之另一例之實施形 態2之附有配線基板之背面電極型太陽電池單元的模式性 之剖面圖。 實施形態2之附有配線基板之背面電極型太陽電池單元 159707.doc •20· 201232795 之特徵在於：絕緣性接著材23填充於背面電極型太陽電池 單元8與配線基板1 〇間之空間、且極性不同之電極間（〇型 用電極6與ρ型用電極7之間）及相鄰之配線間⑶型用配線12 與Ρ型用配線13之間）之空間。 即’於實施形態2之附有配線基板之背面電極型太陽電 池單元中’絕緣性接著材23填充於連接體24、25以外之背 面電極型太陽電池單元8與配線基板1 〇間之空間。 因此’於貫施形態2之附有配線基板之背面電極型太陽 電池單元中’亦為電性連接之η型用電極6、η型用配線12 及導電性接著材21之連接體24之外表面藉由絕緣性接著材 23覆蓋，並且電性連接之ρ型用電極7、ρ型用配線13及導 電性接著材2 1之連接體2 5之外表面亦藉由絕緣性接著材2 3 覆蓋。 藉此，可抑制水分浸入至背面電極型太陽電池單元8之 半導體基板1與配線基板10之絕緣性基材u之間。 又’於驅動實施形態2之附有配線基板之背面電極型太 %電池單元時’即便於藉由極性不同之相鄰之電極間產生 之電％及/或相鄰之配線間產生之電場而導致構成電極之 金屬及/或構成配線之金屬因離子遷移現象而析出之情形 時，亦可藉由絕緣性接著材23而防止金屬向連接體24、25 之外側移動。 根據以上原因’於貫施形態2之附有配線基板之背面電 極型太陽電池單元中，亦可抑制因水分之浸入及離子遷移 現象所致之極性不同之相鄰之電極間及/或相鄰之配線間 159707.doc 201232795 之電性短路的產生，故而可提高特性及可靠性。 又，於實施形態2之附有配線基板之背面電極型太陽電 池單元中，如實施形態1般絕緣性接著材23不僅填充至連 接體24、25之外表面’亦填充至連接體24、25以外之空 間。藉此，由於可抑制水分浸入至背面電極型太陽電池單 元8之半導體基板1與配線基板10之絕緣性基材11之間，故 而可抑制水分浸入至連接體24、25。又，藉由填充於背面 電極型太％電池單元8之半導體基板1與配線基板丨〇之絕緣 性基材11之間之絕緣性接著材23，可將背面電極型太陽電 池單元8與配線基板1〇牢固地接著，因此可進一步提高可 靠性。 實施形態2之附有配線基板之背面電極型太陽電池單元 可藉由例如以下方法製造’即於實施形態1之附有配線基 板之背面電極型太陽電池單元之製造方法中，增大焊接樹 脂20之使用量，或者增大焊接樹脂2〇中所包含之絕緣性接 著材23之比例。 實施形態2中之上述以外之說明與實施形態1相同，因此 省略其說明。 <實施形態3> 圖12中表示作為本發明之半導體裝置之另一例之實施形 態3之附有配線基板之背面電極型太陽電池單元的模式性 之剖面圖。 實施形態3之附有配線基板之背面電極型太陽電池單元 之特徵在於：使用絕緣性接著材23及與絕緣性接著材23不 159707.doc •22- 201232795 同之其他絕緣性接著材22作為將背面電極型太陽電池單元 8與配線基板1〇接著之接著材。 此處於貫施开> 態3之附有配線基板之背面電極型太陽 電池單元中，絕緣性接著材23以覆蓋連接體24、25之外表 面之方式配置，於與絕緣性接著材23相鄰之位置配置其他 絕緣性接著材22。 因此於貰施形態3之附有配線基板之背面電極型太陽Fig. 11 is a schematic cross-sectional view showing a back electrode type solar cell unit with a wiring board in a second embodiment of the semiconductor device of the present invention. The back electrode type solar cell unit 159707.doc of the second embodiment is characterized in that the insulating material 23 is filled in the space between the back electrode type solar cell unit 8 and the wiring board 1 and The space between the electrodes having different polarities (between the 〇 type electrode 6 and the p type electrode 7) and the adjacent wiring (3) type wiring 12 and the Ρ type wiring 13). In the back electrode type solar cell unit with the wiring board of the second embodiment, the insulating material 23 is filled in the space between the back electrode type solar cell 8 and the wiring board 1 other than the connectors 24 and 25. Therefore, in the back electrode type solar cell unit with the wiring board in the form of the second embodiment, the n-type electrode 6 and the n-type wiring 12 and the connecting body 24 of the conductive bonding material 21 are electrically connected. The surface is covered with an insulating material 23, and the outer surfaces of the p-type electrode 7 and the p-type wiring 13 and the conductive member 2 1 which are electrically connected are also insulated by the insulating material 2 3 . cover. Thereby, it is possible to suppress moisture from entering between the semiconductor substrate 1 of the back electrode type solar cell 8 and the insulating substrate u of the wiring substrate 10. Further, when the back electrode type of the wiring substrate of the second embodiment is used, the electric power generated between the adjacent electrodes having different polarities and/or the electric field generated between the adjacent wirings is used. When the metal constituting the electrode and/or the metal constituting the wiring is precipitated by the ion migration phenomenon, the metal can be prevented from moving to the outside of the connectors 24 and 25 by the insulating material 23. According to the above reasons, in the back electrode type solar cell unit with the wiring substrate in the form 2, it is possible to suppress the adjacent electrodes and/or adjacent to each other with different polarities due to the immersion of water and the phenomenon of ion migration. In the wiring room 159707.doc 201232795, the electrical short circuit is generated, so that the characteristics and reliability can be improved. Further, in the back electrode type solar battery cell with the wiring board of the second embodiment, as in the first embodiment, the insulating material 23 is filled not only to the outer surfaces of the connecting bodies 24 and 25 but also to the connecting bodies 24 and 25 Outside the space. As a result, moisture can be prevented from entering between the semiconductor substrate 1 of the back electrode type solar cell unit 8 and the insulating substrate 11 of the wiring substrate 10, so that moisture intrusion into the connectors 24 and 25 can be suppressed. Moreover, the back electrode type solar cell unit 8 and the wiring substrate can be filled by the insulating binder 23 which is filled between the semiconductor substrate 1 of the back electrode type solar cell 8 and the insulating substrate 11 of the wiring board 8. 1〇 is firmly followed, so reliability can be further improved. The back electrode type solar cell unit with the wiring board of the second embodiment can be manufactured by the following method, that is, in the manufacturing method of the back electrode type solar cell unit with the wiring board according to the first embodiment, the solder resin 20 is enlarged. The amount of use or the ratio of the insulating binder 23 included in the solder resin 2 is increased. The descriptions other than the above in the second embodiment are the same as those in the first embodiment, and thus the description thereof will be omitted. <Embodiment 3> FIG. 12 is a schematic cross-sectional view showing a back electrode type solar cell unit with a wiring board in the third embodiment of the semiconductor device according to another example of the present invention. The back electrode type solar cell unit with the wiring board according to the third embodiment is characterized in that the insulating adhesive member 23 and the other insulating adhesive member 22 which is the same as the insulating adhesive member 23 and 159707.doc • 22-201232795 are used. The back electrode type solar cell unit 8 and the wiring board 1 are next connected to each other. In the back electrode type solar battery cell with the wiring board attached to the state 3, the insulating material 23 is disposed so as to cover the outer surfaces of the connectors 24 and 25, and is in contact with the insulating material 23 Other insulating backing members 22 are disposed adjacent to each other. Therefore, the back electrode type solar with the wiring board attached to the form 3
電池單元中，亦為電性連接之用電極6、η型用配線P 及導電性接著材2 1之連接體24之外表面藉由絕緣性接著材 23而覆蓋，並且電性連接之ρ型用電極7、ρ型用配線η及 導電性接著材21之連接體25之外表面亦藉由絕緣性接著材 23而覆蓋。而且，以與絕緣性接著材23相鄰之方式，其他 絕緣性接著材22配置於背面電極型太陽電池單元8與配線 基板1〇間之空間、且極性不同之電極間（η型用電極6與？型 用電極7之間）及相鄰之配線間（η型用配線12與ρ型用配線13 之間）之空間。 藉此，可抑制水分浸入至背面電極型太陽電池單元8之 半導體基板1與配線基板10之絕緣性基材11之間。 又，於驅動實施形態3之附有配線基板之背面電極型太 陽電池單元時，即便藉由極性不同之相鄰之電極間產生之 電#及/或相鄰之配線間產生之電場而導致構成電極之金 屬及/或構成配線之金屬因離子遷移現象而析出之情形 時亦了猎由絕緣性接著材2 3而防止金屬向連接體2 4、2 5 之外側移動。 159707.doc -23- 201232795 根據以上原因，於實施形態3之附有配線基板之背面電 極型太陽電池單元亦可抑制因水分之浸入及離子遷移現象 所致之極性不同之相鄰之電極間及/或相鄰之配線間之電 性短路的產生’故而可提高特性及可靠性。 又，於實施形態3之附有配線基板之背面電極型太陽電 池單元中’與貫施形態2同樣地藉由填充至連接體24、25 以外之空間之絕緣性接著材23及其他絕緣性接著材22而可 進一步抑制水分浸入至連接體24、25。又，由於可將背面 電極型太陽電池單元8與配線基板1〇牢固地接著，故而可 進一步提高可靠性。 進而於貫施形態3之附有配線基板之背面電極型太陽 電池單元中，作為其他絕緣性接著材22使用價格更低之材 料，將昂貴之焊接樹脂20之一部分置換成其他絕緣性接著 材22，藉此可確保與實施形態2相同之可靠性並且降低製 造成本。 實施形態3之附有配線基板之背面電極型太陽電池單元 可藉由例如於實施形態2之附有配線基板之背面電極型太 陽電池單元之製造方法中與焊接樹脂2〇 一併使用其他絕緣 性接著材22而製造。 實施形態3中之上述以外之說明與實施形態丨及實施形態 2相同’因此省略其說明。 實施例 <實施例1 > 首先，製作形成於η型石夕基板之背面之_雜質擴散區域 159707.doc •24- 201232795 上之帶狀之η型用電極與形成於p型雜質擴散區域上之帶狀 之P型用電極一個個地交替配置之背面電極型太陽電池單 元。此處，n型用電極及P型用電極分別為Ag電極，相鄰之 η型用電極與P型用電極間之間距設為750 μηι。又，n型用 電極及Ρ型用電極各自之寬度設為50 μπι〜15G μηι , η型用電 極及ρ型用電極各自之高度設為3 μιη〜13 。 其次，藉由網版印刷分別於背面電極型太陽電池單元之 ^•用電極上及Ρ型用電極上設置烊接樹脂（Tamun化研（股 份）製造之tCAP_5401_27)。此處所使用之焊接樹脂為& =系之焊料粒子（導電性接著材）分散於環氡系之絕緣性樹 脂（第二絕緣性接著材）中而成之焊接樹脂，且以寬度為150 、尚度大致為3〇 μιη之方式設置。 其次’卩f面電極型太陽電池單元之背面之η型用電極 及Ρ型用電極分別與配線基板之η型用配線及ρ型用配線對 向之方式’使背面電極型太陽電池單元重合於配線基板 广°此處，η型用配線及ρ型用配線分別形成於包含ρΕΝ之 絕=性基材上，η型用配線及？型用配線分別設為銅配線。 乂其後’將背面電極型太陽電池單元側作為下側而將重合 後之:月:面電極型太陽電池單元與配線基板投入至真空貼合 藉由根據圖1 3所不之溫度曲線而加熱及加麼製作實施 例1之附有配線基板之背面電極型太陽電池單元。再者， 圓所示之溫度曲線係使用熱電偶丨〜6而測定。 々實施例丨之附有配線基板之背面電極型太陽電池單元係 斤示電性連接之用電極6、η型用配線12及導電 159707.doc •25· 201232795 性接著材21之連接體24之外表面藉由絕緣性接著材^覆 蓋，並且電性連接之p型用電極7、p型用配線13及導電性 接著材21之連接體25之外表面亦藉由絕緣性接著材23覆 蓋。而且，於相鄰之絕緣性接著材23彼此之間設置有空 間。 以上述方式製作之實施例1之附有配線基板之背面電極 型太陽電池單元中，背面電極型太陽電池單元8之半導體 基板1與配線基板10之絕緣性基材丨丨之間，即便於水分浸 入至分別覆蓋相鄰之連接體24之外表面與連接體25之外表 面之絕緣性接著材23之間之情形時’亦可藉由絕緣性接著 材23而抑制水分向連接體24、25側浸人。 又’實施例1之附有配線基板之背面電極型太陽電池單 元中’於驅動其時，可藉由絕緣性接著材23而防止因極性 不同之相鄰之電極間產生之電場及/或相鄰之配線間產生 之電場所致之離子遷移現象而導致構成電極之金屬及/或 構成配線之金屬向連接體24、25之外側析出。 因此’貫施例1之附有配線基板之背面電極型太陽電池 單元與後述之比較例1之附有配線基板之背面電極型太陽 電池單元相比，可提高特性及可靠性。 <實施例2> 除了增大分別設置於背面電極型太陽電池單元之n型用 電極上及ρ型用電極上之焊接樹脂（Tamura化研（股份）製造 之TCAP-5401-27)之設置量以外，與實施例i同樣地製作實 施例2之附有配線基板之背面電極型太陽電池單元。 159707.doc •26· 201232795 實施例2之附有配線基板之背面電極型太陽電池單元係 如圖11所示’與η型用電極6、η型用配線12及導電性接著 材21之連接體24、及與ρ型用電極7、ρ型用配線13及導電 性接著材21之連接體25以外之空間藉由絕緣性接著材23而 • 填充。 • 於以上述方式製作之實施例2之附有配線基板之背面電 極型太陽電池單元亦可抑制水分之浸入或離子遷移現象之 產生，與後述之比較例1之附有配線基板之背面電極型太 陽電池單元相比，可提高特性及可靠性。 又，貫施例2之附有配線基板之背面電極型太陽電池單 元中彦面電極型太陽電池卓元8與配線基板1 〇間之空間 且連接體24、25以外之空間藉由絕緣性接著材23填充，因 此與實施例1之附有配線基板之背面電極型太陽電池單元 相比，可抑制水分浸入至背面電極型太陽電池單元8與配 線基板10之間，並且提高背面電極型太陽電池單元8與配 線基板10之機械連接之強度。 <實施例3> 將焊接樹脂（Tamura化研（股）製造之TCAp_54〇丨-η)之設 . =之增A部分變更為包含較焊接樹脂之價格低之熱硬化 . $環氧樹脂之其他絕緣性接著材，並且於設置於相鄰之位 置之焊接樹脂之間設置其他絕緣性接著材，除此以外與實 施例2同樣地製作實施例3之附有配線基板之背面電極型太 陽電池單元。 實轭例3之附有配線基板之背面電極型太陽電池單元係 159707.doc -27· 201232795 如圖12所示，與n型用電極6、11型用配線12及導電性接著 材21之連接體24之外表面及與p型用電極7、p型用配線13 及導電性接著材21之連接體2 5之外表面分別藉由絕緣性接 著材23覆蓋，並且除此以外之背面電極型太陽電池單元名 與配線基板10間之空間藉由其他絕緣性接著材22填充。 以上述方式製作之實施例3之附有配線基板之背面電極 型太陽電池單元中，亦可抑制水分之浸入及離子遷移現象 之產生，與後述之比較例1之附有配線基板之背面電極型 太陽電池單元相比，可提高特性及可靠性。 又’實施例3之附有配線基板之背面電極型太陽電池單 元中’背面電極型太陽電池單元8與配線基板1〇間之空間 且連接體24、25以外之空間藉由第}絕緣性接著材23及第2 絕緣性接著材22填充，因此與實施例丨之附有配線基板之 背面電極型太陽電池單元相比，可提高背面電極型太陽電 池單元8與配線基板10之機械連接之強度。 進而’實施例3之附有配線基板之背面電極型太陽電池 單兀中’使用價格更低之熱硬化型環氧樹脂代替焊接樹脂 20之一部分’因此與實施例2之附有配線基板之背面電極 型太陽電池單元相比，可抑制製造成本之上升。 <比較例1> 除了藉由降低焊接樹脂20之使用量而使η型用配線12及p 型用配線13各自之側面露出以外，與實施例1同樣地製作 比較例1之附有配線基板之背面電極型太陽電池單元。 以上述方式製作之比較例1之附有配線基板之背面電極 159707.doc -28· 201232795 型太陽電池單元中，無法抑制水分之浸入及離子遷移現象 之產生’與上述之實施例1〜3之附有配線基板之背面電極 型太陽電池單元相比，無法提高特性及可靠性。 應認為本次所揭示之實施形態及實施例之所有方面均為 例示而非制限性者。本發明之範圍並非由上述說明而由申 請專利範圍表示，且欲包含與申請專利範圍均等之含義及 範圍内之所有變更。 產業上之可利用性 本發明可用於半導體裝置及半導體裝置之製造方法，尤 其可恰當地用於附有配線基板之背面電極型太陽電池單元 及太陽電池模組以及該等之製造方法。 【圖式簡單說明】 圖1係實施形態1之附有配線基板之背面電極型太陽電池 單元之模式性之剖面圖。 圖2(a)〜圖2(d)係對實施形態丨之附有配線基板之背面電 極型太陽電池單元之製造方法之一例進行圖解的模式性之 剖面圖。 圖3(a)〜圖3(g)係對實施形態}中所使用之背面電極型太 陽電池單元之製造方法之一例進行圖解之模式性之剖面 圖。 圖4係自背面侧觀察實施形態i中所使用之背面電極型太 陽電池單元時之一例的模式性之俯視圖。 圖5係自背面側觀察實施形態i中所使用之背面電極型太 陽電池單元時之另一例之模式性的俯視圖。 159707.doc 29- 201232795 圖6係自背面側觀察實施形態1中所使用之背面電極型太 陽電池單元時之又一例之模式性的俯視圖。 圖7係自配線之設置側觀察實施形態1中所使用之配線基 板之一例時的模式性之俯視圖。 圖8係沿著圖7之VIII-VIII之模式性之剖面圖。 圖9係貫施形態1之附有配線基板之背面電極型太陽電池 單元之模式性之俯視圖。 圖1〇係包含實施形態1之附有配線基板之背面電極型太 陽電池單元之太陽電池模組之模式性的剖面圖。 圖11係實施形態2之附有配線基板之背面電極型太陽電 池單元之模式性之剖面圖。 圖12係實施形態3之附有配線基板之背面電極型太陽電 池單元之模式性之剖面圖。 圖1 3係表示實施例之溫度曲線之圖。 【主要元件符號說明】 1 半導體基板 la 切割痕 2 η型雜質擴散區域 3 Ρ型雜質擴散區域 4 鈍化膜 4a 接觸孔 4b 接觸孔 5 反射防止膜 6 η型用電極 159707.doc .30· 201232795 7 8 10 11 12 12a 13 13a 14 16 17 18 19 20 21 22 23 24 25 p型用電極 背面電極型太陽電池單元 配線基板 絕緣性基材 η型用配線 η型用配線 ρ型用配線 ρ型用配線 連接用配線 配線 正面保護材 密封材 背面保護材 焊接樹脂 導電性接著材 其他絕緣性接著材 絕緣性接著材 連接體 連接體 159707.doc -31-In the battery unit, the outer surface of the electrode 6 for electrical connection, the n-type wiring P, and the connecting body 24 of the conductive adhesive member 2 is covered with an insulating material 23, and the p-type is electrically connected. The outer surfaces of the electrode 7, the p-type wiring η, and the connecting body 25 of the conductive adhesive 21 are also covered by the insulating material 23. In addition, the insulating insulating material 22 is disposed between the back electrode type solar cell 8 and the wiring substrate 1 in the space between the back electrode type solar cell 8 and the wiring substrate 1 (n-type electrode 6). A space between the adjacent electrode 7 and the adjacent wiring (between the n-type wiring 12 and the p-type wiring 13). Thereby, it is possible to suppress moisture from entering between the semiconductor substrate 1 of the back electrode type solar cell 8 and the insulating substrate 11 of the wiring substrate 10. Further, when the back electrode type solar cell with the wiring board of the third embodiment is driven, the electric field generated between the adjacent electrodes having different polarities and/or the electric field generated between the adjacent wirings is used to constitute the structure. When the metal of the electrode and/or the metal constituting the wiring is precipitated by the ion transport phenomenon, the insulating material 2 is prevented from moving to the outside of the connecting body 24, 2 5 . 159707.doc -23-201232795 According to the above reasons, the back electrode type solar cell unit with the wiring board of the third embodiment can also suppress the adjacent electrodes between the electrodes having different polarities due to the infiltration of water and the phenomenon of ion migration. / or the occurrence of electrical shorts in adjacent wiring closets', so that characteristics and reliability can be improved. In the back electrode type solar cell unit with the wiring board of the third embodiment, the insulating material 23 and other insulating properties which are filled in the space other than the connecting bodies 24 and 25 are similar to those of the second embodiment. The material 22 can further suppress the intrusion of moisture into the connecting bodies 24 and 25. Further, since the back electrode type solar cell unit 8 and the wiring board 1 can be firmly connected, the reliability can be further improved. Further, in the back electrode type solar battery cell with the wiring board of the third embodiment, a lower-priced material is used as the other insulating material 22, and one part of the expensive solder resin 20 is replaced with another insulating material 22 Thereby, the same reliability as in Embodiment 2 can be ensured and the manufacturing cost can be reduced. The back electrode type solar cell unit with the wiring board of the third embodiment can be used together with the solder resin 2, for example, in the method of manufacturing the back electrode type solar cell unit with the wiring board according to the second embodiment. It is then produced from the material 22. The descriptions other than the above in the third embodiment are the same as those in the embodiment and the second embodiment. Therefore, the description thereof will be omitted. EXAMPLES <Example 1 > First, a strip-shaped n-type electrode formed on a back surface of an n-type shi-ray substrate, an impurity-diffused region 159707.doc •24-201232795, and a p-type impurity diffusion region were formed. A back-electrode type solar cell in which the strip-shaped P-type electrodes are alternately arranged one by one. Here, the n-type electrode and the P-type electrode are each an Ag electrode, and the distance between the adjacent n-type electrode and the P-type electrode is 750 μm. Further, the width of each of the n-type electrode and the Ρ-type electrode is set to 50 μm to 15 G μη, and the height of each of the n-type electrode and the p-type electrode is set to 3 μm to 13 . Next, a splicing resin (tCAP_5401_27 manufactured by Tamun Chemical Co., Ltd.) was placed on the electrode of the back electrode type solar cell and the electrode for the ruthenium type by screen printing. The solder resin used here is a solder resin in which a solder particle (conductive adhesive material) of the & = system is dispersed in a ring-shaped insulating resin (second insulating adhesive), and has a width of 150 Å. The setting is roughly set to 3〇μιη. Next, the n-type electrode and the Ρ-type electrode on the back surface of the 卩f-surface electrode type solar cell unit are respectively aligned with the n-type wiring and the p-type wiring of the wiring board, and the back electrode type solar cell unit is superposed on The wiring board is wide. Here, the n-type wiring and the p-type wiring are respectively formed on the absolute substrate including ?, and the n-type wiring and ? The type wiring is set to copper wiring. Then, the side of the back electrode type solar cell unit is superposed as the lower side: month: the surface electrode type solar cell unit and the wiring substrate are put into vacuum bonding and heated by the temperature profile according to FIG. And a back electrode type solar cell unit with a wiring board of Example 1 was produced. Further, the temperature profile shown by the circle was measured using a thermocouple 丨~6. In the embodiment, the back electrode type solar cell unit with the wiring board is electrically connected to the electrode 6, the n-type wiring 12, and the conductive 159707.doc • 25·201232795 connector 24 of the connector 24 The outer surface is covered with an insulating material, and the outer surfaces of the electrically connected p-type electrode 7, p-type wiring 13 and the conductive member 21 are also covered by an insulating material 23. Further, a space is provided between adjacent insulating members 23. In the back electrode type solar cell unit with the wiring board of the first embodiment produced as described above, the semiconductor substrate 1 of the back electrode type solar cell unit 8 and the insulating substrate 配线 of the wiring substrate 10 are even hydrated. When immersed between the outer surfaces of the adjacent connecting body 24 and the insulating backing material 23 of the outer surface of the connecting body 25, respectively, the moisture can be suppressed to the connecting bodies 24 and 25 by the insulating backing member 23. Side immersion. Further, in the back electrode type solar cell unit with the wiring board of the first embodiment, when the driving is performed, the electric field and/or phase generated between adjacent electrodes having different polarities can be prevented by the insulating adhesive member 23. The metal migration phenomenon due to the electric field generated between the adjacent wirings causes the metal constituting the electrode and/or the metal constituting the wiring to be deposited on the outer sides of the connectors 24 and 25. Therefore, the back electrode type solar cell unit with the wiring board according to the first embodiment can improve the characteristics and reliability as compared with the back electrode type solar cell unit with the wiring board of Comparative Example 1 to be described later. <Example 2> In addition, the setting of the solder resin (TCAP-5401-27 manufactured by Tamura Chemical Research Co., Ltd.) provided on the n-type electrode and the p-type electrode of the back electrode type solar cell is increased. A back electrode type solar cell unit with a wiring board of Example 2 was produced in the same manner as in Example i except for the amount. 159707.doc •26·201232795 The back electrode type solar cell unit with the wiring board of the second embodiment is connected to the n-type electrode 6, the n-type wiring 12, and the conductive bonding material 21 as shown in FIG. 24. The space other than the connection body 25 of the p-type electrode 7, the p-type wiring 13 and the conductive bonding material 21 is filled with an insulating material 23. The back electrode type solar cell unit with the wiring board of the second embodiment produced in the above manner can also suppress the intrusion of water or the phenomenon of ion migration, and the back electrode type with the wiring board of Comparative Example 1 to be described later. Compared with solar cells, it improves performance and reliability. Further, in the back electrode type solar cell unit with the wiring board of Example 2, the space between the Yaner electrode type solar cell element 8 and the wiring board 1 is separated, and the space other than the connectors 24 and 25 is followed by insulation. Since the material 23 is filled, it is possible to suppress moisture from entering between the back electrode type solar cell unit 8 and the wiring substrate 10 and to improve the back electrode type solar cell, as compared with the back electrode type solar cell unit with the wiring board of the first embodiment. The strength of the mechanical connection between the unit 8 and the wiring substrate 10. <Example 3> The portion of the welding resin (TCAp_54〇丨-η manufactured by Tamura Chemical Co., Ltd.) was changed to a heat hardening containing a lower price than the solder resin. A back electrode type solar cell with a wiring board of Example 3 was produced in the same manner as in Example 2 except that another insulating material was provided between the soldering resins provided in the adjacent positions. unit. The back electrode type solar cell unit 159707.doc -27·201232795 with the wiring board attached to the yoke example 3 is connected to the n-type electrode 6, the 11-type wiring 12, and the conductive bonding material 21 as shown in FIG. The outer surface of the body 24 and the outer surfaces of the p-type electrode 7, the p-type wiring 13 and the conductive member 21 are covered with an insulating material 23, and the back electrode type is otherwise provided. The space between the solar cell unit name and the wiring substrate 10 is filled with another insulating material 22 . In the back electrode type solar cell unit with the wiring board of the third embodiment produced as described above, it is possible to suppress the intrusion of water and the phenomenon of ion migration, and the back electrode type with the wiring board of Comparative Example 1 to be described later. Compared with solar cells, it improves performance and reliability. Further, in the back electrode type solar cell unit with the wiring board of the third embodiment, the space between the back electrode type solar cell unit 8 and the wiring substrate 1 and the spaces other than the connectors 24 and 25 are further insulated by the first insulation. Since the material 23 and the second insulating material 22 are filled, the strength of the mechanical connection between the back electrode type solar cell 8 and the wiring substrate 10 can be improved as compared with the back electrode type solar cell in which the wiring board is attached. . Further, in the back electrode type solar cell unit with the wiring board of the third embodiment, 'a portion of the solder resin 20 is replaced with a less expensive thermosetting epoxy resin'. Therefore, the back surface of the wiring substrate with the second embodiment is attached. Compared with the electrode type solar battery unit, the increase in manufacturing cost can be suppressed. <Comparative Example 1> A wiring board of Comparative Example 1 was produced in the same manner as in Example 1 except that the side surfaces of the n-type wiring 12 and the p-type wiring 13 were exposed by reducing the amount of the solder resin 20 used. The back electrode type solar cell unit. In the solar cell of the back surface electrode 159707.doc -28·201232795 having the wiring board of Comparative Example 1 produced as described above, the intrusion of water and the generation of ion migration phenomenon cannot be suppressed' and the above-described Examples 1 to 3 Compared with the back electrode type solar cell with a wiring board, the characteristics and reliability cannot be improved. All aspects of the embodiments and examples disclosed herein are to be considered as illustrative and not restrictive. The scope of the present invention is defined by the scope of the claims, and is intended to be Industrial Applicability The present invention can be applied to a semiconductor device and a method of manufacturing a semiconductor device, and can be suitably used for a back electrode type solar cell unit and a solar cell module with a wiring board and a method of manufacturing the same. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a back electrode type solar cell unit with a wiring board according to a first embodiment. Fig. 2 (a) to Fig. 2 (d) are schematic cross-sectional views showing an example of a method of manufacturing a back electrode type solar cell in which a wiring board is attached in the embodiment. Fig. 3 (a) to Fig. 3 (g) are schematic cross-sectional views showing an example of a method of manufacturing a back electrode type solar cell used in the embodiment}. Fig. 4 is a schematic plan view showing an example of the back electrode type solar battery cell used in the embodiment i viewed from the back side. Fig. 5 is a schematic plan view showing another example of the back electrode type solar battery cell used in the embodiment i viewed from the back side. 159707.doc 29-201232795 Fig. 6 is a schematic plan view showing still another example of the back electrode type solar battery cell used in the first embodiment viewed from the back side. Fig. 7 is a schematic plan view showing an example of a wiring board used in the first embodiment from the installation side of the wiring. Figure 8 is a schematic cross-sectional view taken along line VIII-VIII of Figure 7. Fig. 9 is a schematic plan view showing a back electrode type solar cell unit with a wiring board of the first embodiment. Fig. 1 is a schematic cross-sectional view showing a solar battery module including a back electrode type solar battery unit with a wiring board according to the first embodiment. Fig. 11 is a schematic cross-sectional view showing a back electrode type solar cell unit with a wiring board in the second embodiment. Fig. 12 is a schematic cross-sectional view showing a back electrode type solar cell unit with a wiring board in the third embodiment. Fig. 1 is a diagram showing the temperature profile of the embodiment. [Description of main component symbols] 1 Semiconductor substrate la Cutting mark 2 η-type impurity diffusion region 3 Ρ-type impurity diffusion region 4 Passivation film 4a Contact hole 4b Contact hole 5 Reflection preventing film 6 η-type electrode 159707.doc .30· 201232795 7 8 10 11 12 12a 13 13a 14 16 17 18 19 20 21 22 23 24 25 p-type electrode back electrode type solar cell unit wiring board insulating base material n-type wiring n-type wiring p-type wiring p-type wiring Connection wiring wiring front protective material sealing material back surface protective material welding resin conductive material other insulating material insulation insulating material connector connecting body 159707.doc -31-