WO2012050255A1 - Étage de chauffage de type empilement ayant une excellente uniformité de température pour un traitement semi-conducteur - Google Patents

Étage de chauffage de type empilement ayant une excellente uniformité de température pour un traitement semi-conducteur Download PDF

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Publication number
WO2012050255A1
WO2012050255A1 PCT/KR2010/007424 KR2010007424W WO2012050255A1 WO 2012050255 A1 WO2012050255 A1 WO 2012050255A1 KR 2010007424 W KR2010007424 W KR 2010007424W WO 2012050255 A1 WO2012050255 A1 WO 2012050255A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor manufacturing
stage heater
heating
stacked
heating elements
Prior art date
Application number
PCT/KR2010/007424
Other languages
English (en)
Korean (ko)
Inventor
김재민
김호섭
이상신
Original Assignee
주식회사 썬닉스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100103481A external-priority patent/KR101042284B1/ko
Application filed by 주식회사 썬닉스 filed Critical 주식회사 썬닉스
Publication of WO2012050255A1 publication Critical patent/WO2012050255A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Definitions

  • the present invention relates to a stacked stage heater for semiconductor manufacturing with excellent temperature uniformity, and more particularly, to a stacked stage heater for semiconductor manufacturing that can easily repair heating elements and improve temperature uniformity.
  • the stacked stage heater for semiconductor manufacturing may be divided into a metal heater made of a metal material and a ceramic heater made of a ceramic material.
  • the metal heater made of the aluminum-based metal material it can be used sufficiently in the process below the deformation temperature of aluminum, but because the process instability may occur in the high temperature process of more than 400 °C, such a high temperature process is used as a ceramic material Ceramic heaters must be used.
  • Such ceramic integrated heaters require a high level of know-how in design, plastic working, joining, and evaluation techniques. Therefore, the production yield is very low, the price is disadvantageous.
  • the integrated heater is weak in thermal shock and short-lived, there is a problem that the heating elements are disposed inside the ceramic heater is difficult to repair the heating elements.
  • a heating power rod made of metal is fastened by screwing a ceramic wire into a screw thread using a heating power rod, and a phenomenon such as damage or breakage of the fastening part due to stress due to thermal expansion may occur. Often occurs.
  • Another object of the present invention is to provide a laminated stage heater for semiconductor manufacturing that can prevent damage to the fastening portion due to stress due to thermal expansion.
  • Stacked stage heater for semiconductor manufacturing is a plurality of heating elements, the body is formed to surround the upper and side of the plurality of heating elements; A lower plate covering the lower side of the body, and having an RF electrode embedded therein, the upper plate stacked on an upper portion of the lower plate to cover the upper side of the body, and spaced apart from the body to form an air gap; It includes a support member for supporting the lower plate,
  • the body is formed of a material having a lower coefficient of thermal expansion than the material forming the upper and lower plates, the upper and lower plates are characterized in that the material is formed of a higher thermal conductivity than the material forming the body.
  • the upper plate is characterized in that it has a thickness of 5 ⁇ 19mm.
  • the body is formed of quartz, and the upper and lower plates are formed of aluminum nitride (AlN).
  • the stage heater may further include a heating power rod connected to the plurality of heating elements.
  • the heating power rod is disposed in the support member, characterized in that for supplying a signal from an external heating power supply to the heating element.
  • the plurality of heating elements are disposed in the central portion of the body and the first heating element receives a first signal; And a second heating element disposed at an edge of the body and receiving a second signal different from the first signal.
  • the stage heater may further include a grounded RF ground rod applying high frequency power to the RF electrode.
  • the upper plate has a diameter of 307 ⁇ 313mm, characterized in that having a groove of the diameter of 303 ⁇ 306mm.
  • the upper and lower plates are coupled to be detachable from the body.
  • the present invention it becomes easy to repair the heating elements arranged inside the susceptor manufactured as a separate type, thereby reducing the repair cost.
  • the present invention has the effect of improving the temperature uniformity of the large diameter wafer by adjusting the temperature gradient of the 300 mm large diameter wafer.
  • FIG. 1 is a cross-sectional view illustrating a stacked stage heater for manufacturing a semiconductor according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view illustrating a stacked stage heater for manufacturing a semiconductor according to another embodiment of the present invention.
  • FIG. 3 is an enlarged cross-sectional view of a portion of FIG. 2.
  • FIG. 4 and 5 are enlarged cross-sectional views respectively showing portions A and B of FIG. 1.
  • 6 and 7 are a plan view and a circuit diagram showing a heating element of the stacked stage heater for semiconductor manufacturing according to an embodiment of the present invention.
  • FIGS. 8 and 9 are a plan view and a circuit diagram illustrating a stacked stage heater for semiconductor manufacturing according to another embodiment of the present invention.
  • 1 is a cross-sectional view showing a stacked stage heater for semiconductor manufacturing according to an embodiment of the present invention.
  • 2 is a cross-sectional view illustrating a stacked stage heater for manufacturing a semiconductor according to another embodiment of the present invention.
  • FIG. 3 is an enlarged cross-sectional view of a portion of FIG. 2.
  • 4 and 5 are enlarged cross-sectional views respectively showing portions A and B of FIG. 1.
  • the stacked stage heater 100 for manufacturing a semiconductor includes a heating element 110, a susceptor 120, and a support member 130.
  • the heating element 110 is mounted such that a plurality of the heating elements 110 are inserted into the susceptor 120.
  • the plurality of heating elements 110 may be disposed at the center of the susceptor 120, for example, at edges of the first heating element 112 and the susceptor 120 to which a first signal is applied.
  • the second heating element 114 may be disposed and receive a second signal different from the first signal.
  • a plurality of heating elements 110 having a plate shape or a circular shape is divided into two regions.
  • the plurality of heating elements 112, 114, and 116 are different from each other.
  • Coil-type heating element may be used, and may be designed to be divided into three regions, that is, (1) region, (2) region, and (3) region as shown in FIG. 3.
  • the plurality of heating elements 110 may be designed to be divided into three or more regions, that is, four, five, six, or the like, in order to adjust the temperature uniformity in more detail. .
  • the heating elements 110 are at an appropriate temperature, preferably 400 ° C. or higher, and 900, prior to performing a process such as deposition or etching on a 300 mm large area semiconductor wafer (not shown) seated on the susceptor 120. It functions to heat to a temperature below °C.
  • the heating elements 110 are designed to be divided into two or three regions, even if a temperature deviation occurs in the center portion and the edge portion of the susceptor 120, a plurality of heating elements 110 are selectively used. It may be possible to adjust the temperature deviation.
  • the plurality of heating elements 110 may operate in response to a signal from an external heating power supply unit (not shown) via the heating power load 160.
  • the heating power rod 160 is connected to the first heating power rod 162 and the second heating element 114 connected to the first heating element 112. Heating power rod 164 may be included.
  • the heating power rod 162 may include a first heating power rod 162 connected to the first heating element 112 and a second connecting portion to the second heating element 114.
  • a heating power rod 164 and a third heating power rod 166 connected to the third heating element 116 may be included.
  • the susceptor 120 includes a body 122, an upper plate 124, and a lower plate 126.
  • the body 122 is formed to surround the top and side surfaces of the plurality of heating elements 110, and is formed of a quartz material having a relatively low coefficient of thermal expansion compared to ceramics.
  • quartz material In addition to the quartz material, another material having a relatively low thermal expansion coefficient may be used as the body 122 in comparison with a ceramic such as aluminum nitride (AlN).
  • AlN aluminum nitride
  • the quartz can be divided into crystalline quartz and fused quartz, of which it is preferable to use crystalline quartz.
  • the infrared transmittance is good as compared to the molten quartz, thereby increasing the efficiency of radiant heat.
  • the body 122 is provided with a plurality of grooves (not shown) for accommodating the heating elements 110, and the heating elements 110 may be mounted to be inserted into each of the grooves.
  • the body 122 is made of quartz, stress due to thermal expansion at a portion fastened by a screw coupling method to fix the heating power rod 160 made of metal may be reduced. Therefore, it is possible to prevent defects such as damage or breakage in the fastening portion.
  • the upper plate 124 is spaced apart from the body 122 to be provided with an air gap 170, and surrounds the upper and side surfaces of the body 122 and includes an RF electrode (radio-frequent electrode 140) embedded therein. do.
  • the upper plate 124 is made of quartz as the material of the body 122, it is preferable to form an aluminum nitride (AlN) material having superior thermal conductivity than the quartz.
  • AlN aluminum nitride
  • the RF electrode 140 receives a high frequency power from a high frequency power supply unit (not shown) through the grounded RF ground rod 150.
  • the RF electrode 140 may be fastened by a screw coupling method with the RF ground rod 150 disposed in the susceptor 120 provided with a thread.
  • the thickness t of the upper plate 124 is preferably formed to 5 ⁇ 19mm.
  • the upper plate 124 may be damaged by the load of the semiconductor wafer seated on the upper surface of the upper plate 124.
  • the thickness t of the upper plate 124 exceeds 19 mm, a problem may occur in that a process time required to raise the surface of the upper plate 124 to an appropriate temperature increases.
  • the air gap 170 is designed to be provided between the body 122 and the upper plate 124, the heat conducted from the heating element 110 to the body 122 is air Radiation heat is generated while passing through the gap 170 to allow uniform heat transfer to the entire region of the upper plate 120.
  • FIG. 1 illustrates an example in which the air gap 170 is formed, not only a pure air gap but also a metal or ceramic material that may uniformly transfer heat to the air gap may be filled.
  • the upper plate 124 is spaced apart from the body 122 is provided with an air gap 170, the RF electrode (radio-frequent electrode, 140) buried in the upper and side of the body 122 is embedded therein Equipped.
  • the upper plate 124 is made of quartz as the material of the body 122, it is preferable to form an aluminum nitride (AlN) material having superior thermal conductivity than the quartz.
  • AlN aluminum nitride
  • the lower plate 126 is formed to surround the lower and side surfaces of the body 122 and is coupled to the upper plate 124.
  • the upper and lower plates 124 and 126 are preferably laminated in a dome structure surrounding the outer front surface of the body 122.
  • the upper and lower plates 124 and 126 may be made of ceramic materials such as zirconium oxide (Al 2 O 3 ), aluminum nitride (AlN), and protic boron nitride (PBN). It is preferable to use aluminum nitride (AlN).
  • a ceramic material having excellent thermal conductivity besides aluminum nitride (AlN) may be used as the upper and lower plates 124 and 126.
  • the upper and lower plates 124 and 126 and the body 122 may be coupled by, for example, welding or the like. At this time, the upper and lower plates 124 and 126 are preferably coupled to be detachable from the body 122.
  • the heating elements 110 disposed in the susceptor 120 may be easily repaired. .
  • one or more of the upper and lower plates 124 and 126 may be removed from the body 122, repaired, and then recombined, thereby easily performing the repair process. Will be.
  • the upper plate 124 has a diameter (L1) of 307 ⁇ 313mm, may have a groove of the diameter (3032 ⁇ 306mm L2). As such, when the diameter of the upper plate 124 is formed to be 307 to 313 mm, the 300 mm large-diameter semiconductor wafer can be accommodated in the center.
  • the upper plate 124 has a diameter (L1) of 457 ⁇ 463mm, may have a groove of the diameter (L2) of 453 ⁇ 456mm.
  • L1 diameter of 457 ⁇ 463mm
  • L2 diameter of the diameter of the upper plate 124
  • the groove of the upper plate 124 when viewed in plan view, may have a circular or oval shape, and may also be formed to have a polygonal shape such as a triangle, a square, a pentagon, and the like.
  • the groove shape of the upper plate 124 is not limited thereto, and may be changed or modified into various shapes.
  • the support member 130 supports the susceptor 120.
  • the support member 130 may be formed of a cylindrical dielectric material.
  • a lifting unit (not shown) may be further disposed inside the support member 130, and the lifting motion of the susceptor 120 is controlled through the lifting unit.
  • 6 and 7 are plan and circuit diagrams illustrating heating elements of a stacked stage heater for semiconductor manufacturing according to an exemplary embodiment of the present invention.
  • 8 and 9 are a plan view and a circuit diagram illustrating a stacked stage heater for semiconductor manufacturing according to another embodiment of the present invention.
  • the 2-stage heating element divided into two regions may be used as the stacked stage heater for manufacturing a semiconductor according to an embodiment of the present invention.
  • the heating element 100 may be a first heating element.
  • 112 and the second heating element 114 may be provided.
  • the heating elements 100 may include a first heating element 112 connected between a high frequency heating rod, which is an output terminal of a high frequency power supply unit (not shown), and a ground voltage, and between the high frequency heating rod and the ground voltage.
  • the second heating element 114 may be connected to the first heating element 112 in parallel.
  • the first and second heating elements 112 and 114 may be configured in a circular or helical shape, and receive a 220 V power power from the heating power supply unit 170 to generate a magnetic field.
  • the current flowing through the second heating elements 112 may be electrically coupled to each other to selectively drive the first and second heating elements 112 and 114.
  • the 3-stage heating element divided into three regions may be used as the stacked stage heater for manufacturing a semiconductor according to another embodiment of the present invention.
  • the first heating element 112, the second heating element 114, and the third heating element 116 may be provided.
  • the heating elements 110 may include a first heating element 112 connected between a high frequency heating rod, which is an output terminal of a high frequency power supply unit for supplying high frequency power, and a ground voltage, and the first heating element 112 between the high frequency heating rod and the ground voltage.
  • a first heating element 112 connected between a high frequency heating rod, which is an output terminal of a high frequency power supply unit for supplying high frequency power, and a ground voltage, and the first heating element 112 between the high frequency heating rod and the ground voltage.
  • the heating elements 110 may be configured in a circular or helical shape, and generates a magnetic field by receiving power power from the heating power source, and as a result, the first, second, and third heating elements 112, 114, and 116.
  • the current flowing through the plurality of coils becomes electrically coupled to each other to selectively drive the first, second, and third heating elements 112, 114, and 116.
  • thermocouples may be disposed at any one portion or multiple portions of the susceptor 120 for temperature control.
  • the multilayer stage heater for semiconductor manufacturing has a dome having an upper and a lower plate made of aluminum nitride (AlN) material having a relatively high thermal conductivity on the outer side of the body made of a quartz material having a relatively low coefficient of thermal expansion. Since the structure is coupled to the structure, the radiant heat radiated from the heating element of the heater can be easily transferred to the upper plate.
  • AlN aluminum nitride
  • the stacked stage heater for semiconductor manufacturing according to the present invention has a structure in which the heating elements are separated into two regions or three regions, unlike the integrated ceramic heaters of the related art, thereby improving temperature uniformity at the center and the edge of the susceptor.
  • the body of the susceptor is made of a quartz material having a relatively smaller thermal expansion coefficient than that of a ceramic such as aluminum nitride (AlN), it is possible to prevent failure of the fastening part due to thermal stress.
  • the upper plate is made of aluminum nitride (AlN) having high thermal conductivity and is spaced apart from the body, the radiant heat radiated from the heating element of the stage heater is uniformly applied to the upper plate. There is an effect that can be dispersed.
  • AlN aluminum nitride

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Resistance Heating (AREA)

Abstract

L'invention concerne un étage de chauffage de type empilement ayant une excellente uniformité de température pour un traitement semi-conducteur, dans lequel les réchauffeurs peuvent être facilement réparés et l'uniformité de température peut être améliorée. L'étage de chauffage de type empilement selon la présente invention comprend une pluralité de réchauffeurs, un corps entourant les parties supérieures et les surfaces latérales de la pluralité de réchauffeurs, une plaque inférieure recouvrant le côté inférieur du corps, une plaque supérieure qui comprend une électrode RF et qui est empilée sur la plaque inférieure de manière à recouvrir le côté supérieur du corps, la plaque supérieure étant éloignée du corps de manière à définir une couche d'air, et un élément de support supportant la plaque inférieure. Le corps est constitué d'un matériau dont le coefficient d'expansion thermique est inférieur à ceux des plaques supérieure et inférieure. Chacune des plaques supérieure et inférieure est constituée d'un matériau dont la conductivité thermique est supérieure à celle du matériau du corps.
PCT/KR2010/007424 2010-10-15 2010-10-27 Étage de chauffage de type empilement ayant une excellente uniformité de température pour un traitement semi-conducteur WO2012050255A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0100623 2010-10-15
KR20100100623 2010-10-15
KR10-2010-0103481 2010-10-22
KR1020100103481A KR101042284B1 (ko) 2010-10-22 2010-10-22 온도 균일도가 우수한 반도체 제조용 적층형 스테이지 히터

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WO2012050255A1 true WO2012050255A1 (fr) 2012-04-19

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TW (1) TW201216394A (fr)
WO (1) WO2012050255A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113644056A (zh) * 2020-05-11 2021-11-12 美光科技公司 减轻相邻堆叠式半导体装置上的热冲击
CN113658896A (zh) * 2021-08-19 2021-11-16 上海稷以科技有限公司 一种晶圆加工用加热载盘
WO2022076740A1 (fr) * 2020-10-09 2022-04-14 Applied Materials, Inc. Support de substrat chauffé pour réduire au minimum la perte de chaleur et améliorer l'uniformité

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244143A (ja) * 1993-02-15 1994-09-02 Tokyo Electron Ltd 処理装置
KR20050119684A (ko) * 2003-04-07 2005-12-21 동경 엘렉트론 주식회사 탑재대 구조체 및 이 탑재대 구조체를 갖는 열처리 장치
KR20090014386A (ko) * 2006-06-16 2009-02-10 도쿄엘렉트론가부시키가이샤 탑재대 구조 및 열처리 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244143A (ja) * 1993-02-15 1994-09-02 Tokyo Electron Ltd 処理装置
KR20050119684A (ko) * 2003-04-07 2005-12-21 동경 엘렉트론 주식회사 탑재대 구조체 및 이 탑재대 구조체를 갖는 열처리 장치
KR20090014386A (ko) * 2006-06-16 2009-02-10 도쿄엘렉트론가부시키가이샤 탑재대 구조 및 열처리 장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113644056A (zh) * 2020-05-11 2021-11-12 美光科技公司 减轻相邻堆叠式半导体装置上的热冲击
WO2022076740A1 (fr) * 2020-10-09 2022-04-14 Applied Materials, Inc. Support de substrat chauffé pour réduire au minimum la perte de chaleur et améliorer l'uniformité
CN113658896A (zh) * 2021-08-19 2021-11-16 上海稷以科技有限公司 一种晶圆加工用加热载盘

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Publication number Publication date
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