201216394 六、發明說明： 【發明所屬之技術領域】 本發明麟半導體藝的溫度均自性優異的堆放式分級 加熱器，特別底，關於可以方便地修理發熱體，並能提高溫度均 勻性的用於半導體工藝的堆放式加熱器。 【先前技術】 用於半導體工藝的堆放式分級加熱器可分爲由金屬材質組成 的金屬加熱器及由陶瓷材質組成的陶瓷加熱器。 此時’由紹系列金屬材質組成的金屬加熱器可以充分使用在 紹的變形溫度以下之處理，但在超過度之高溫處理中會發生 工程之不穩定。因此’在高溫處理中應#使用由喊材質組成的 陶瓷加熱器。 此^陶兗-體型加熱器在設計、塑性加工、接合及評價技術 中要求冋度專業性之作業^因此具有生纽率較低，價格較高的 弊端。 *人並且體型加熱器之弊端在於，由於應對熱衝擊性較差， P較短❿且陶兗加熱II的内部安裝有發熱體，這些發熱體之 ^修困難。例如，金屬材質的加熱功率負載透過在喊材質的加 ^中形成螺紋’利用加熱功率負載的螺絲結合方式而緊固。此 、’經常發生由於熱膨脹_力，緊_份受損或破碎之現象。 、、w十、&加工1序複雜’無法均勻加熱器中心部及邊緣部之 201216394 【發明内容】 因此，鑒於上述問題，本發明提供提供一種用於半導體工藝 的堆放式分級加熱器’可以方便的維修發熱體並且提高溫度之均 勻性。 本發明之另-目的在於，提供-麵於半導體王藝的堆放式 分級加熱器，由此預先防止緊固部份·熱膨服之應力而受損。 爲了解決以上問題，本發明提供一種用於半導體工藝的堆放 式分級加熱器，其包含複數個發熱體、一主體、一底板、一頂板 暴以及支撐構件，其中此主體圍繞這些發熱體之上部及側面；底 板覆蓋主體之下侧；頂板具有一埋設於内部之射頻電極，並且堆 放於底板的上部’以此覆蓋主體之上側，但與主齡離配設而形 成空隙；此支撐構件支撐底板，其申主體係由熱膨脹系數低於形 成頂板及底板之材質的材質形成；頂板及底板係由導熱率高於形 成主體之材質的材質形成。 頂板之厚度爲5〜19毫米（mm)。 • 主體由石英（quartz)組成，頂板及底板由氮化鋁（Α1Ν)形 成。 分級加熱器更包含有與這些發熱體相連接的一加熱功率負 載。 加熱功率負載安裝於此支撐構件之内，將自加熱電源部傳輸 的信號供應至發熱體。 這些發熱體包含有一第一發熱體及一第二發熱體，第一發熱 體配設於主體之中央部並接收第一信號；第二發熱體配設於主體 201216394 之邊緣並接收與第—信鮮相_第二信號。 刀級加熱器向射頻電極供應高頻電源並更包含經過接地處理 的一射頻接地負載。 …頂板之直輕爲3〇7〜313毫米（職），並具備直徑爲舶， 毫米（mm)的凹槽。底板可卸載地結合於此主體。 本發明的技術效果在於： 本發明中可以方便地維修安裝於以分_辦的基座内部之 複數個發熱體，可以節省維修費用。 並且，本發明還可以透過調整3〇〇毫米（mm)的大口徑晶片 之溫度變化率，提高大口徑晶片之溫度均勻性。 【實施方式】 /參關式及詳細制之實_，即可_本發_優點及特 征及其實現方法。但是，本㈣並非局限於以下公開的實施例， 而是以不同的多種形態實現，本實施例僅僅使本發明的公開完 整’使本發明所屬技術領_技術人貝完全知曉本發明的範脅， 本發明透過專利申請範圍喊義。同―參考標號在整個說明書中 表示同一組成元件。 下面’將參閱圖式部份詳細說明本發明實施例的用於半導體 工藝的堆放式分級加熱器。 「第1圖」係為本發明實施綱用於半導體工藝的堆放式分 級加熱器之剖關。「第2圖」係為本發明另—實施例_於半導 體工藝的堆放式分級加熱ϋ之剖面圖圖」係為放大「第2 圖」的-部份之剖面圖。「第4圖」及「第5圖」係分別為放大顯 201216394 示「第1圖」的A及B部份之剖面圖。 清參閱「第1圖」，本發明一實施例之用於半導體工藝的堆放 式分級加熱H 1⑻包含複數個發_ 11G、_基座（suseepter) 12〇 以及一支撐構件130。 基座120之内部中插入安裝有複數個發熱體11〇。此時，這些 發麵no’可包含有例如第一發熱體112及第二發熱體114，第 一發熱體112配設於此基座的中央部並接收第一信號；第二發熱 體114酉&設於基座之邊緣並接收與第__信號不姻之第二信號。 第1圖」中表示由板狀和圓形組成的複數個發熱體11〇劃 分爲2個區域的情形’但還可以如「第2圖」及「第3圖」所示， 複數個發熱體（112、114、116)可以採用線圈型之發熱體，可設 計成劃分為3個區域，即如「第3圖」所示，劃分成i區域、2 區域、3區域。與此不同，雖然圖未示，但為了更加細緻地調節溫 度均勻性’可以將發熱體11〇設計成劃分為3個以上，即劃分為4 個、5個、6個等區域。 這些發熱體110在對安裝於基座120上之3⑻毫米（mm)大 面積半導體晶片（圖未示）進行沉積、侧紅序之前，對其加 熱至恰當溫度，較佳為400 C以上、9〇〇°C以下之溫度。此時，由 於本實施例中設計為複數個發熱體110劃分爲2個或3個區域， 因此’即使發生基座120之巾央部及親部的溫度偏差，也可以 利用複數個發熱體110選擇性地調節溫度偏差。由此可提高基座 120整個區域之溫度均勻性。 此時，這些發熱體110以加熱功率負载16〇爲媒介，根據自 7 · 201216394 外部的加熱電源部（圖未示）傳輸之信號而工作。此時，如「第工 圖」所不，加熱功率負載160包含有與第一發熱體112相連接的 第一加熱功率負載162及與第二發熱體114相連接的第二加熱功 率^载164。與此不相同’如「第2圖」所示，加熱功率負載162 l s有一第發熱體U2相連接的第一加熱功率負載162、與第二 發熱體114相連接的第二加熱功率負載164及與第三發熱體ιΐ6 相連接的第三加熱功率負載166。 方面’基座120包含有一主體122、一頂板124以及一底板 126 〇 主體122 ®繞複數個發舰11〇的上部及侧面，並由熱膨服 系數，對低於_的石英（quatze)材質形成。此時’石英可劃分 爲二sa型；5英和紐型石英，其巾較佳為結晶型石英。將結晶型 石央村質用作主體m時’由於其紅外線透過率優於型石英， 因此可以提高輕射熱之效率。 除石英材質外， 於陶瓷的其他材質， 作為主體122還可以採用熱膨脹係數相對低 例如氮化鋁（Α1Ν)〇 杜曰1時石央可劃分為結晶型石英及溶融型石英，其117較佳i 二率==^英用作主體122時’由於其_ 手馒於溶邮石夬，因此可以提高輻射熱之效率。 發埶Hr!⑽122具備複數個凹槽（圖未示），用於收納· G ’這些發熱體_人配設於各_之形式安裝。 減少「第4圖」所示，由於主體122由石英組成，可以 制疋金屬材質的加熱功率負載⑽而簡絲結合的方式緊 201216394 固的部份因熱膨脹而受到的應力，因此可以預先防止緊固部份受 損或破碎等不良現象。 頂板124與主體122相分離而形成空隙17〇，並圍繞主體122 之上部及側面，並具備埋設於其内部的射頻電極（radi〇_fre职ent electrode) 140，如果以石英用作主體122的材質，則此種頂板124 優選傳熱率相比較於石英更優異的氮化鋁（A1N)材質形成。 射頻電極140以接地處理的射頻接地負載15〇爲媒介，自高 頻電源部（圖未示）接收高頻電源。 此時，如「第5圖」所示’射頻電極14〇透過螺絲結合之方 式與射頻接地負載150緊固’其中射頻接地負載15〇位於具備螺 紋的基座120之内。 頂板124之厚度（t)較佳為5〜19毫米（mm)。假如，頂板 124之厚度（t)不到5毫米（mm)，則頂板124有可能因安裝於 頂板124上面的半導體晶片之載重而受損，與此相反，頂板124 之厚度（t)超過19毫米（mm)，會導致增加將頂板124之表面溫 • 度上升至恰當溫度所需的工序時間。 此時，根據本發明之實施例，當主體122與頂板124之間設 4有空隙170時，自發熱體no傳輸至主體122的熱量通過空隙 Π0時，生成輻射熱，可將熱量均勻地傳輸至頂板12〇之整個區域。 「第1圖」中表示形成有空隙17〇之實例，但除了純粹的空 隙外’還可以填充能夠向空隙均勻地傳輸熱量的金屬或陶究材質。 頂板124與主體122相分離而形成空隙17〇，並圍繞主體122 的上部及侧面，並具備埋設於内部的射頻電極14〇。此種頂板以 201216394 在將石英用作主體122的材質時，較佳地，由熱導率優於石英之 氮化鋁（A1N)材質形成。 底板126形成爲圍繞主體122的下部及侧面並與頂板124相 結合。此時頂板124及底板126優選以圍繞主體122的外側前面 之穹隆構造堆放形成。 頂板124及底板126可以採用氧化銘（A1203)、氮化紹（A1N) 及熱解氮化硼（PyrolyticBoronNitride，PBN)等陶竟材質，其中 較佳為導熱率優異的氮化鋁（A1N)。此外，作為頂板124及底板 126，除了氮化鋁之外，還可採用熱導率優異之陶瓷材質。 頂板124及底板126以及主體122 ’例如可以以焊接等方式相 結合。此時，較佳地，頂板124及底板126可卸載的與主體122 相結合。 如上所述’由可卸載之穹隆構造形成的堆放式分級加熱器1〇〇 之中，可方便地分離基座120，因此，也可方便地維修位於基座 120内的複數個發熱體11〇。 例如，需要維修複數個發熱體110時，自主體122分離頂板 124及底板126中的一個以上，進行修理後重新結合的方式進行即 可’因此很容易進行維修工序。 此時，頂板124之直徑（L1)爲307〜313毫米（_)，並具 備直徑（L2)爲303〜306毫米（mm)的凹槽。由此，在頂板 的直徑爲307〜313毫米（mm)時，可以在正中央收容毫米 (mm)大口徑半導體晶片。 與此不相同，頂板124具備457〜463毫米（職）的直徑αι )， 201216394 還可具備453〜456毫米（mm)直徑⑽的凹槽。與此相同，在 頂板124的直徑為357〜363毫米（mm)時，可以在正中央收容 4500毫米（mm)的大口徑半導體晶片。 ▲頂板124的凹槽在平面上看時，可以具備圓形、擴圓形之形 ‘4 ’並且還可以形成為具備三肖形、四角形、五角形等多角形之201216394 VI. Description of the Invention: [Technical Field of the Invention] The stacked type classification heater having excellent temperature uniformity in the semiconductor semiconductor technology of the present invention is particularly useful for the purpose of easily repairing a heating element and improving temperature uniformity. Stacking heaters for semiconductor processes. [Prior Art] The stacked type classification heater used in the semiconductor process can be classified into a metal heater composed of a metal material and a ceramic heater composed of a ceramic material. At this time, the metal heater consisting of the metal materials of the Sau series can be used sufficiently below the deformation temperature of the process, but the engineering instability occurs in the high temperature treatment. Therefore, 'ceramic heaters composed of shouting materials should be used in high temperature processing. This ^Tao-body heater requires the professional operation of the design in the design, plastic processing, joining and evaluation technology. Therefore, it has the disadvantages of low birth rate and high price. * The disadvantage of the human body heater is that, due to the poor thermal shock resistance, P is short and the inside of the ceramic heater II is equipped with a heating element, which is difficult to repair. For example, the heating power load of the metal material is fastened by the screwing of the heating power load by forming the thread in the addition of the shouting material. This, 'often occurs due to thermal expansion _ force, tight _ part of the damage or broken phenomenon. ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Convenient maintenance of the heating element and increased temperature uniformity. Another object of the present invention is to provide a stacking type grading heater which is surface-to-semiconductor, thereby prejudging the stress of the fastening portion and the thermal expansion. In order to solve the above problems, the present invention provides a stacked type grading heater for a semiconductor process, comprising a plurality of heating elements, a main body, a bottom plate, a top plate, and a supporting member, wherein the main body surrounds the upper portion of the heating element and a side surface covering the lower side of the main body; the top plate has a radio frequency electrode embedded in the inner portion, and is stacked on the upper portion of the bottom plate to cover the upper side of the main body, but is disposed away from the main body to form a gap; the support member supports the bottom plate, The main system is formed by a material having a thermal expansion coefficient lower than that of the material forming the top plate and the bottom plate; the top plate and the bottom plate are formed of a material having a higher thermal conductivity than the material forming the main body. The thickness of the top plate is 5 to 19 millimeters (mm). • The main body consists of quartz, and the top and bottom plates are made of aluminum nitride (Α1Ν). The grading heater further includes a heating power load connected to the heating elements. A heating power load is installed in the support member to supply a signal transmitted from the heating power supply unit to the heating element. The heating element includes a first heating element and a second heating element. The first heating element is disposed at a central portion of the main body and receives the first signal. The second heating element is disposed at the edge of the main body 201216394 and receives the first letter. Fresh phase _ second signal. The knife-level heater supplies high-frequency power to the RF electrode and more includes an RF-grounded load that is grounded. ...the straightness of the top plate is 3〇7~313mm (job), and has a groove of diameter, millimeter (mm). The bottom plate is removably coupled to the body. The technical effect of the present invention is that, in the present invention, it is possible to easily repair a plurality of heat generating bodies installed inside the base of the branch, which can save maintenance costs. Moreover, the present invention can also improve the temperature uniformity of large-diameter wafers by adjusting the temperature change rate of a large-diameter wafer of 3 mm (mm). [Embodiment] / Participation and detailed system _, can be _ this hair _ advantages and features and its implementation. However, the present invention is not limited to the embodiments disclosed below, but is implemented in a variety of different forms, and the present embodiment merely makes the disclosure of the present invention complete the technology of the present invention. The invention is screamed by the scope of the patent application. The same reference numerals denote the same constituent elements throughout the specification. The stacked type grading heater for a semiconductor process of the embodiment of the present invention will be described in detail below with reference to the drawings. Fig. 1 is a cross-sectional view of a stacking type cascade heater used in the semiconductor process of the present invention. The "Fig. 2" is a cross-sectional view of a portion of the present invention - a stacked sectional heating block in the semiconductor process. Figure 4 and Figure 5 are respectively a cross-sectional view of sections A and B of the "Figure 1" of 201216394. Referring to Fig. 1, a stacked type classification heating H 1 (8) for a semiconductor process according to an embodiment of the present invention includes a plurality of hair -11G, a susmostter 12 〇, and a support member 130. A plurality of heating elements 11 are inserted into the interior of the susceptor 120. In this case, the hair surface no' may include, for example, the first heat generating body 112 and the second heat generating body 114. The first heat generating body 112 is disposed at a central portion of the base and receives the first signal; the second heat generating body 114酉& is located at the edge of the base and receives a second signal that does not match the __ signal. Fig. 1 shows a case where a plurality of heating elements 11〇 composed of a plate shape and a circular shape are divided into two regions. However, as shown in "Fig. 2" and "Fig. 3", a plurality of heating elements can be used. (112, 114, 116) A coil type heating element can be used, and can be designed to be divided into three regions, that is, as shown in "Fig. 3", divided into an i region, a two region, and a third region. On the other hand, although not shown, in order to adjust the temperature uniformity more carefully, the heating element 11 can be designed to be divided into three or more, that is, divided into four, five, six or the like. The heat generating body 110 heats the 3 (8) millimeter (mm) large-area semiconductor wafer (not shown) mounted on the susceptor 120 to a proper temperature, preferably 400 C or more, before being deposited in a side red sequence. 〇〇 °C below the temperature. At this time, since the plurality of heat generating bodies 110 are designed to be divided into two or three regions in the present embodiment, it is possible to use a plurality of heat generating bodies 110 even if the temperature difference between the central portion and the front portion of the base 120 is generated. The temperature deviation is selectively adjusted. Thereby, the temperature uniformity of the entire area of the susceptor 120 can be improved. At this time, these heating elements 110 operate under the heating power load 16 , and are based on signals transmitted from a heating power supply unit (not shown) external to 7 · 201216394. At this time, as shown in the "work diagram", the heating power load 160 includes a first heating power load 162 connected to the first heating element 112 and a second heating power load 164 connected to the second heating element 114. . Different from this, as shown in FIG. 2, the heating power load 162 ls has a first heating power load 162 connected to the heating element U2, and a second heating power load 164 connected to the second heating element 114 and A third heating power load 166 connected to the third heating element ι 6 . The pedestal 120 includes a main body 122, a top plate 124, and a bottom plate 126. The main body 122 is disposed around the upper and side sides of the plurality of launching ships 11 ,, and has a thermal expansion coefficient, and is lower than _ quartz. form. At this time, the quartz can be classified into a two-sa type; a 5-inch and a new-type quartz, and the towel is preferably a crystalline quartz. When the crystalline type Shiyangcun is used as the main body m, since the infrared transmittance is superior to that of the quartz, the efficiency of the light-radiating heat can be improved. In addition to the quartz material, other materials of the ceramic, as the main body 122 can also use a relatively low coefficient of thermal expansion, such as aluminum nitride (Α1Ν) 〇 Du Fu 1 can be divided into crystalline quartz and molten quartz, 117 is better When the second rate ==^ is used as the main body 122, the efficiency of radiant heat can be improved because of its _ hand licking on the philadelphia. The hairpin Hr! (10) 122 is provided with a plurality of grooves (not shown) for storing and heating the heat generating body. As shown in Fig. 4, since the main body 122 is made of quartz, the heating power load (10) of the metal material can be made, and the simple wire bonding method is used to tighten the stress of the solid portion due to thermal expansion in 201216394, so that the tightness can be prevented in advance. Defects such as damage or breakage of the solid part. The top plate 124 is separated from the main body 122 to form a gap 17〇, and surrounds the upper portion and the side surface of the main body 122, and has a radio frequency electrode (radiation_entre ent electrode) 140 embedded therein, if quartz is used as the main body 122. For the material, the top plate 124 is preferably formed of an aluminum nitride (A1N) material having a heat transfer rate superior to that of quartz. The RF electrode 140 receives the grounded RF grounding load 15 〇 as a medium, and receives the high frequency power from the high frequency power supply unit (not shown). At this time, as shown in Fig. 5, the RF electrode 14 is fastened to the RF grounding load 150 by screwing, wherein the RF grounding load 15 is located within the pedestal 120 having the thread. The thickness (t) of the top plate 124 is preferably 5 to 19 millimeters (mm). If the thickness (t) of the top plate 124 is less than 5 millimeters (mm), the top plate 124 may be damaged by the load of the semiconductor wafer mounted on the top plate 124. In contrast, the thickness (t) of the top plate 124 exceeds 19 Millimeter (mm) results in an increase in the process time required to raise the surface temperature of the top plate 124 to the proper temperature. At this time, according to the embodiment of the present invention, when there is a gap 170 between the main body 122 and the top plate 124, heat transferred from the heating element no to the main body 122 passes through the gap Π0, generating radiant heat, and the heat can be uniformly transmitted to The entire area of the top plate 12〇. In the "Fig. 1", an example in which a void 17 is formed is shown, but in addition to a pure void, a metal or ceramic material capable of uniformly transferring heat to the void can be filled. The top plate 124 is separated from the main body 122 to form a gap 17〇, and surrounds the upper portion and the side surface of the main body 122, and has an RF electrode 14〇 embedded therein. Such a top plate is preferably formed of a material having a thermal conductivity superior to that of quartz aluminum nitride (A1N) when quartz is used as the material of the main body 122 at 201216394. The bottom plate 126 is formed to surround the lower portion and the side surface of the main body 122 and is combined with the top plate 124. At this time, the top plate 124 and the bottom plate 126 are preferably stacked in a dome structure surrounding the outer front surface of the main body 122. The top plate 124 and the bottom plate 126 may be made of a ceramic material such as Oxygen (A1203), A1N, and Pyrolytic Boron Nitrid (PBN), and aluminum nitride (A1N) excellent in thermal conductivity is preferable. Further, as the top plate 124 and the bottom plate 126, in addition to aluminum nitride, a ceramic material having excellent thermal conductivity can be used. The top plate 124 and the bottom plate 126 and the main body 122' may be combined, for example, by welding or the like. At this time, preferably, the top plate 124 and the bottom plate 126 are unloadably coupled to the main body 122. As described above, the susceptor 120 can be easily separated from the stacking type grading heater 1 formed by the unloadable dome structure, and therefore, the plurality of heat generating bodies 11 located in the susceptor 120 can be easily repaired. . For example, when it is necessary to repair a plurality of heat generating bodies 110, one or more of the top plate 124 and the bottom plate 126 are separated from the main body 122, and the repair and re-bonding can be performed. Therefore, the maintenance process can be easily performed. At this time, the diameter (L1) of the top plate 124 is 307 to 313 mm (-), and has a groove having a diameter (L2) of 303 to 306 mm (mm). Thus, when the diameter of the top plate is 307 to 313 mm (mm), a millimeter (mm) large-diameter semiconductor wafer can be accommodated in the center. Unlike this, the top plate 124 has a diameter of 457 to 463 mm (a), and the 201216394 can also have a groove of 453 to 456 mm (mm) in diameter (10). Similarly, when the diameter of the top plate 124 is 357 to 363 millimeters (mm), a large-diameter semiconductor wafer of 4500 millimeters (mm) can be accommodated in the center. ▲ When the groove of the top plate 124 is viewed in a plane, it may have a circular, rounded shape of '4' and may also be formed to have a polygonal shape such as a three-Shaw shape, a quadrangle shape, and a pentagon shape.
形態。此種頂板m的凹槽之形狀並不限於此，可以變更或變形 為多種形狀。 V 支撐構件13G支撐基座12()。支_件13G由圓筒形的電介質 材質組成。雖然圖式中沒有詳細表示，此種支撐構件13〇之内部 還可以具有-升降單元（圖未示）’透過雜升降單元控制基座12〇 之升降作業。 —方Φ第6圖」及「第7圖」係為本發明一實施例的用於 半導體工藝的堆放式分級加熱器的發熱體之平面圖及電路圖。「第 8圖」及「第9圖」係為本發明另一實施例的用於半導體工藝的堆 放式分級加熱器之平面圖及電路圖。 • 請參閱「第6圖」及「第7圖」，本發明一實施例的用於半導 體工藝的堆放式分級加熱器可以利用劃分爲2健域的2__發 熱體，此時，發熱體100可以具備第一發熱體112及第二發熱體 114 〇 這些發熱體100可包含有一第一發熱體112及一第二發熱體 114,第一發熱體112連接於高頻加熱負載與接地電源之間，其中 高頻加熱負載作爲供應高頻電源的高頻電源部（圖未示）之輸出 私子，第一發熱體114在尚頻加熱負載與接地電壓之間，與第一 11 201216394 發熱體112並列相連接。 此時’第一發熱體112及第二發熱體114可組成爲圓形或螺 旋形，並自加熱功率電源部170接收220V的功率電源以産生磁 場’其結果成爲與通過第一發熱體112及第二發熱體114的電流 分別電氣結合的變壓器形態，而能夠選擇性的驅動第一發熱體112 及第二發熱體114。 一方面’請參閱「第8圖」及「第9圖」，本發明另一實施例 的用於半導體工藝的堆放式分級加熱器還可以利用劃分爲3個區 域的3_z〇ne發熱體，此時，發熱體110可以具有一第一發熱體112、 φ 一第二發熱體114以及一第三發熱體116。 這些發熱體100可包含有一第一發熱體U2、一第二發熱體 114以及一第三發熱體116，第一發熱體112連接於高頻加熱負載 與接地電源之間，其中高頻加熱負載作爲供應高頻電源的高頻電 源部（圖未示）之輸出端子；第二發熱體114及第三發熱體116 在高頻加熱負載與接地電壓之間，與第一發熱體112並列相連接。 此時，這些發熱體110可組成爲圓形或螺旋形，並自加熱功 修 率電源部接收功率電源以産生磁場，其結果成爲與通過第一發熱 體112、第二發熱體114及第三發熱體116的電流分別電氣結合的 變壓器形態，從而能夠選擇性的驅動第一發熱體112、第二發熱體 114及第三發熱體116。 如上所述，本發明的用於半導體工藝的堆放式分級加熱器具 有由熱膨脹系數相對低的石英材質組成之主體外側與由導熱率相 對咼的氮化鋁（A1N)材質組成的頂板及底板以穹隆構造結合之結 12 201216394 構，因此，自加熱器的發熱體輻射出之輻射熱很容易傳輸至頂板。 特別地，本發明的用於半導體工藝的堆放式分級加熱器與現 有的一體型陶瓷加熱器不相同，本發明的用於半導體工藝的堆放 式分級加熱器構造爲複數個發熱體分離成2個區域或3個區域， 因此具有提高基座的中央部和邊緣部的溫度均勻性之優點。並且 基座之主體由熱膨脹系數例如氮化銘（Ain)等陶究相對小的石英 材質組成，由此可預先防止緊固部份因熱應力而破壞引發不良。 本發明的用於半導體工藝的堆放式分級加熱器的頂板由導熱 籲報高的氮化紹（A1N)材質組成，並具有與主體分離配設的空隙 結構，因此可以將自加熱器的發熱體輻射出的輻射熱均勻的分散 至頂板。 最後應說明的是：雖然本發明以前述之較佳實施例揭露如 上，然其並非用以限定本發明。本領域之技術人員應當意識到在 不脫離本發明所附之申請專利範圍所揭示之本發明之精神和範圍 的情况下，所作之更動與潤飾，均屬本發明之專利保護範圍之内。 φ 關於本發明所界定之保護範圍請參照所附之申請專利範圍。 【圖式簡單說明】 第1圖係為本發明實施例的用於半導體工藝的堆放式分級加 熱器之剖面圖； 第2圖係為本發明另一實施例的用於半導體工藝的堆放式分 級加熱器之剖面圖； 第3圖係為放大第2圖的一部份之剖面圖； 第4圖及第5圖係分別為放大顯示第1圖的a及b部份之剖 13 201216394 面圖； 第6圖及第7圖係為本發明一實施例的用 放式分級加熱器的發熱體之平面圖及電路圖；以及的堆 第8圖及第9圖係為本發明另一實施例的用於半導體工藝的 堆放式分級加熱器之平面圖及電路圖。 【主要元件符號說明】 100 110 112 114 Π6 120 122 124 126 130 140 150 160 162 164 170 分級加熱器 發熱體 第一發熱體 第二發熱體 第三發熱體 基座 主體 頂板 底板 支撐構件 射頻電極 射頻接地負载 加熱功率負載 第一加熱功率負載 第二加熱功率負载 空隙 14 201216394 t 厚度 LI 直徑 L2 直徑form. The shape of the groove of the top plate m is not limited thereto, and may be changed or deformed into various shapes. The V support member 13G supports the base 12 (). The support member 13G is composed of a cylindrical dielectric material. Although not shown in detail in the drawings, the inside of the support member 13 may have a lifting unit (not shown) that controls the lifting operation of the base 12 through the miscellaneous lifting unit. Fig. 6 and Fig. 7 are a plan view and a circuit diagram of a heat generating body of a stacked type classification heater for a semiconductor process according to an embodiment of the present invention. Fig. 8 and Fig. 9 are plan views and circuit diagrams of a stacked classifying heater for a semiconductor process according to another embodiment of the present invention. • Referring to FIG. 6 and FIG. 7 , a stacked type classification heater for a semiconductor process according to an embodiment of the present invention may utilize a 2__heat generating body divided into 2 health domains, and at this time, the heating element 100 The first heating element 112 and the second heating element 114 may be provided. The heating element 100 may include a first heating element 112 and a second heating element 114. The first heating element 112 is connected between the high frequency heating load and the ground power source. The high-frequency heating load is used as an output of a high-frequency power supply unit (not shown) for supplying a high-frequency power source, and the first heating element 114 is between the frequency-heated load and the ground voltage, and the first 11 201216394 heating element 112 Parallel connection. At this time, the first heating element 112 and the second heating element 114 may be formed in a circular or spiral shape, and receive a 220V power supply from the heating power supply unit 170 to generate a magnetic field. The result is that the first heating element 112 and the first heating element 112 The current of the second heating element 114 is electrically coupled to each other, and the first heating element 112 and the second heating element 114 can be selectively driven. On the one hand, please refer to FIG. 8 and FIG. 9, and the stacked type classification heater for semiconductor process according to another embodiment of the present invention can also utilize a 3_z〇ne heating element divided into three regions. The heating element 110 may have a first heating element 112, a second heating element 114, and a third heating element 116. The heating element 100 may include a first heating element U2, a second heating element 114, and a third heating element 116. The first heating element 112 is connected between the high-frequency heating load and the grounding power source, wherein the high-frequency heating load is used as the high-frequency heating load. An output terminal of a high-frequency power supply unit (not shown) for supplying a high-frequency power source; the second heating element 114 and the third heating element 116 are connected in parallel with the first heating element 112 between the high-frequency heating load and the ground voltage. At this time, the heating elements 110 may be formed in a circular or spiral shape, and receive a power source from the heating power rate power supply unit to generate a magnetic field, and as a result, pass through the first heating element 112, the second heating element 114, and the third heat generation. The current of the body 116 is electrically coupled to the transformer, so that the first heating element 112, the second heating element 114, and the third heating element 116 can be selectively driven. As described above, the stacked type classification heater for a semiconductor process of the present invention has a top plate and a bottom plate which are composed of a quartz material having a relatively low thermal expansion coefficient and an aluminum nitride (A1N) material having a relatively high thermal conductivity. The structure of the Qianlong structure is combined with the 201216394 structure. Therefore, the radiant heat radiated from the heating element of the heater is easily transmitted to the top plate. In particular, the stacked type classification heater for a semiconductor process of the present invention is different from the conventional integrated type ceramic heater, and the stacked type classification heater for a semiconductor process of the present invention is configured to separate a plurality of heating elements into two The area or the three areas have the advantage of increasing the temperature uniformity of the central portion and the edge portion of the susceptor. Further, the main body of the susceptor is composed of a relatively small quartz material such as a thermal expansion coefficient such as nitriding (Ain), whereby the fastening portion can be prevented from being damaged by thermal stress in advance. The top plate of the stacked type grading heater for semiconductor process of the present invention is composed of a material having a high heat-conducting nitriding (A1N) material, and has a gap structure which is disposed separately from the main body, so that the heating body of the self-heating device can be The radiated radiant heat is uniformly dispersed to the top plate. It should be noted that the invention is not limited to the invention, but is not intended to limit the invention. It will be appreciated by those skilled in the art that modifications and modifications may be made without departing from the spirit and scope of the invention as disclosed in the appended claims. φ For the scope of protection defined by the present invention, please refer to the attached patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a stacked grading heater for a semiconductor process according to an embodiment of the present invention; and FIG. 2 is a stacked grading for a semiconductor process according to another embodiment of the present invention. Sectional view of the heater; Fig. 3 is a cross-sectional view of a portion of Fig. 2; Fig. 4 and Fig. 5 are enlarged views showing the sections a and b of Fig. 1 respectively. 6 and 7 are a plan view and a circuit diagram of a heat generating body using a discharge classifying heater according to an embodiment of the present invention; and a stack of Figs. 8 and 9 are for use in another embodiment of the present invention. Plan and circuit diagram of a stacked graded heater in a semiconductor process. [Main component symbol description] 100 110 112 114 Π6 120 122 124 126 130 140 150 160 162 164 170 grading heater heating element first heating element second heating element third heating element pedestal body top plate bottom plate support member RF electrode RF grounding Load heating power load first heating power load second heating power load gap 14 201216394 t thickness LI diameter L2 diameter
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