CN116420218A - Heated substrate support with minimized heat loss and increased uniformity - Google Patents

Heated substrate support with minimized heat loss and increased uniformity Download PDF

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Publication number
CN116420218A
CN116420218A CN202180065288.9A CN202180065288A CN116420218A CN 116420218 A CN116420218 A CN 116420218A CN 202180065288 A CN202180065288 A CN 202180065288A CN 116420218 A CN116420218 A CN 116420218A
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China
Prior art keywords
heating plate
substrate support
thermal conductivity
hollow shaft
processing chamber
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Pending
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CN202180065288.9A
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Chinese (zh)
Inventor
帕万库马尔·拉马南德·哈拉帕霍利
甘加达尔·希拉瓦特
苏希尔·R·冈德哈勒卡尔
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN116420218A publication Critical patent/CN116420218A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Resistance Heating (AREA)

Abstract

Various embodiments of substrate supports for use in a processing chamber are provided herein. In some embodiments, a substrate support for use in a processing chamber includes: a heating plate having an upper surface for supporting the substrate and a lower surface opposite the upper surface, wherein the heating plate comprises a first material having a first thermal conductivity, and wherein the sidewall of the heating plate and the lower surface of the heating plate are covered with a cover plate comprising a second material having a second thermal conductivity less than the first thermal conductivity; a hollow shaft coupled to the heating plate, wherein the hollow shaft comprises a third material having a third thermal conductivity, the third thermal conductivity being less than the first thermal conductivity; and one or more heating elements disposed in the heating plate.

Description

Heated substrate support with minimized heat loss and increased uniformity
FIELD
Embodiments of the present disclosure generally relate to substrate processing equipment.
Background
Substrate processing equipment typically includes a process chamber configured to perform certain processes on a substrate, such as chemical vapor deposition, atomic layer deposition, annealing, and the like. A substrate support for use in a process chamber typically includes a base coupled to a hollow shaft that supports a substrate, the hollow shaft base providing conduits for fluids, power, gases, and the like. The susceptor may also include a heater embedded in the susceptor to provide heat to the substrate for certain substrate processes. For conventional susceptors, the inventors have observed that heat from the heater is transferred away from the substrate, resulting in heat loss to the bottom surface of the susceptor and the shaft. Furthermore, with conventional susceptors, the inventors have observed a change in the upper surface of the temperature across (across) susceptor.
Accordingly, the inventors have provided a number of embodiments of improved substrate supports.
Disclosure of Invention
Provided herein are methods of making in a processing chamber embodiments of substrate supports for use therewith. In some embodiments, a substrate support for use in a processing chamber includes: a heating plate having an upper surface supporting the substrate and a lower surface opposite the upper surface, wherein the heating plate comprises a first material having a first thermal conductivity, and wherein the sidewall of the heating plate and the lower surface of the heating plate are covered with a cover plate comprising a second material having a second thermal conductivity less than the first thermal conductivity; a hollow shaft coupled to the heating plate, wherein the hollow shaft comprises a third material having a third thermal conductivity, the third thermal conductivity being less than the first thermal conductivity; and one or more heating elements disposed in the heating plate.
In some embodiments, a substrate support for a processing chamber includes: a heating plate having an upper surface for supporting a substrate and a lower surface opposite the upper surface, wherein the heating plate comprises a first material having a first thermal conductivity greater than 100 watts/meter kelvin (W/(m-K)), and wherein the sidewall of the heating plate and the lower surface of the heating plate are covered with a cover plate comprising a second material having a second thermal conductivity less than the first thermal conductivity; a hollow shaft coupled to the heating plate, wherein the hollow shaft comprises a second material; and one or more heating elements disposed in the heating plate.
In some embodiments, a processing chamber includes: a chamber body defining an interior space; and a substrate support at least partially disposed in the interior space, wherein the substrate support comprises: a heating plate comprising one or more heating elements disposed in the heating plate and comprising an upper surface for supporting a substrate, wherein the heating plate comprises a first material having a first thermal conductivity, and wherein a sidewall of the heating plate and a lower surface of the heating plate are covered with a cover plate comprising a second material having a second thermal conductivity less than the first thermal conductivity; and a hollow shaft coupled to the heating plate, wherein the hollow shaft comprises a third material having a third thermal conductivity, the third thermal conductivity being less than the first thermal conductivity.
Other and further embodiments of the present disclosure are described below.
Brief description of the drawings
The various embodiments of the present disclosure briefly summarized above and discussed in more detail below may be understood by reference to the various illustrative embodiments of the present disclosure that are illustrated in the appended drawings. However, the drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.
Fig. 1 is a schematic side view of a processing chamber in accordance with at least some embodiments of the present disclosure.
Fig. 2 is a schematic cross-sectional side view of a substrate support in accordance with one or more embodiments of the present disclosure.
Fig. 3 is a schematic cross-sectional side view of a substrate support in accordance with at least some embodiments of the present disclosure.
Fig. 4 is a schematic cross-sectional side view of a substrate support in accordance with at least some embodiments of the present disclosure.
Fig. 5 is a schematic cross-sectional side view of a substrate support in accordance with at least some embodiments of the present disclosure.
Fig. 6 is a partially schematic cross-sectional side view of a heating plate in accordance with at least some embodiments of the present disclosure.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. The drawings are not to scale and may be simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further recitation.
Detailed Description
Various embodiments of substrate supports are provided herein. The substrate support typically includes a heating plate coupled to a hollow shaft. The inventors have observed that radiant and conductive heat losses from the heater plate adversely affect substrate processing uniformity and power consumption. Various embodiments of substrate supports provided herein include a heating plate made of a material having a first thermal conductivity. The heating plate is covered on the side walls and the lower surface of the heating plate with a second material having a second thermal conductivity lower than the first thermal conductivity to advantageously reduce heat loss from the heating plate. The reduced heat loss from the heating plate advantageously improves the uniformity of heat provided to the substrate disposed on the substrate support.
Fig. 1 is a schematic side view of a process chamber 100 in accordance with at least some embodiments of the present disclosure. The configuration and arrangement of the components of the process chamber 100 shown in fig. 1 is merely exemplary and is not intended to be limiting. Furthermore, well-known components or other details not necessary for an understanding of the present disclosure are omitted from the drawings in order not to obscure the present disclosure. Furthermore, the upper, lower, top and bottom as used in this disclosure are relative to the orientation in the drawings and are not intended to be limiting. As shown in fig. 1, the processing chamber 100 includes a chamber body 138 having an interior space 132. The substrate support 150 is disposed in the inner space 132. The substrate support 150 may generally comprise a heating plate 140, or susceptor, and a hollow shaft 134 for supporting the heating plate 140. In some embodiments, the shape of the heating plate 140 is circular. In some embodiments, the heating plate 140 comprises a ceramic material. Hollow shaft 134 provides a conduit to provide, for example, backside gas, process gas, vacuum clamping, fluid, coolant, power, or the like to heating plate 140.
The base plate 102 is illustrated as being disposed on a heating plate 140. In some embodiments, the substrate support 150 is coupled to the gas component 110. In some embodiments, the substrate support 150 is a vacuum chuck and the gas component 110 is a vacuum pump or other suitable vacuum source. In these embodiments, the vacuum region 104 is formed between the upper surface of the heating plate 140 and the substrate 102. In some embodiments, a pressure sensor, such as a pressure gauge 130, is operatively coupled to the vacuum region 104 to measure the backside pressure in the vacuum region 104. In some embodiments, the gas component 100 is a gas supply configured to provide backside gas to the upper surface of the heating plate 140. In some embodiments, the heating plate 140 includes a first gas channel 108 to provide at least one of vacuum pressure or backside gas to an upper surface of the heating plate 140. The heating plate 140 includes one or more heating elements 112, such as resistive heating elements, coupled to a heater power supply 114.
The chamber body 138 includes an opening, such as the slit valve 106, that selectively opens the chamber body 138 to facilitate moving substrates into and out of the interior space 132 of the chamber body 138, for example, via the substrate transfer robot 142. In some embodiments, control of the substrate transfer robot 142 facilitates control of the position of the substrate 102 above the substrate support 150 and ultimately the position of the substrate 102 above the substrate support 150 as the substrate 102 is transferred from the substrate transfer robot 142 to the substrate support 1500. A plurality of lift pins 128 may be provided to assist in transferring the substrate 102 between the substrate transfer robot 142 and the substrate support 150.
The process chamber 100 is configured for performing one or more of a variety of processes, such as, for example, a deposition process such as chemical vapor deposition (chemical vapor deposition; CVD) or plasma-enhanced chemical vapor deposition (plasma enhanced chemical vapor deposition; PECVD). The gas source 116 is coupled to the interior volume 132 of the chamber body 138 to provide process gases for substrate processing (e.g., deposition). In some embodiments, the gas source 116 provides at least one inert gas, such as nitrogen or a noble gas (e.g., argon or the like). The pump 126 is coupled to the interior space 132 to maintain a desired pressure within the chamber body 138 and to remove process gases and process byproducts during processing.
In some embodiments, to facilitate control of the process chamber 100, the controller 118 is coupled to various components of the process chamber 100, including the pressure gauge 130, the substrate transfer robot 142, and the like. The controller 118 may be any form of general purpose computer processor that may be used in an industrial environment to control various chambers and sub-processors. The controller includes a central processing unit (Central Processing Unit; CPU) 120, a memory 122, and a support circuit 124. The memory 122 of the CPU 120, or computer readable medium, may be one or more readily available memories, such as random access memory (random access memory; RAM), read Only Memory (ROM), floppy disks, hard disks, or any other form of digital storage, local or remote. Support circuits 124 are coupled to the CPU 120 for supporting the processor.
Fig. 2 is a schematic cross-sectional side view of a substrate support 150 in accordance with at least some embodiments of the present disclosure. The substrate support 150 includes a heating plate 140 having an upper surface 210 supporting the substrate 102 and a lower surface 212 opposite the upper surface 210. The heating plate 140 includes a first material having a first thermal conductivity. In some embodiments, the first thermal conductivity is greater than 130 watts/meter kelvin (W/(m·k)). In some embodiments, the first thermal conductivity is between about 130 watts/meter kelvin (W/(m·k)) and about 190 watts/meter kelvin (W/(m·k)).
At least one of the sidewall 214 of the heating plate 140 and the lower surface 212 of the heating plate 140 is covered with a cover plate 220 comprising a second material having a second thermal conductivity that is less than the first thermal conductivity. In some embodiments, the upper surface of the cover plate 220 is coplanar with the upper surface 210 of the heating plate 140. In some embodiments, the second thermal conductivity is less than 100 watts/meter kelvin (W/(m·k)). In some embodiments, the second thermal conductivity is about 20% to about 70% of the first thermal conductivity.
In some embodiments, the hollow shaft 206 is coupled to the heating plate 140. In some embodiments, hollow shaft 206 may be hollow shaft 134. The hollow shaft 206 comprises a third material having a third thermal conductivity that is less than the first thermal conductivity. In some embodiments, the third thermal conductivity is less than 100 watts/meter kelvin (W/(m·k)). In some embodiments, the third material of the hollow shaft 206 comprises the second material. In some embodiments, the hollow shaft 206 is coupled to the heating plate 140 vertically below the heating plate 140. The substrate support may include one or more lift pin openings 230 that extend through the heater plate 140 and the cover plate 220 to receive lift pins, such as the lift pins 128. In some embodiments, one or more lift pin openings 230 are disposed radially outward of the hollow shaft 206.
In some embodiments, the heating plate 140 is made of aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ) Beryllium oxide (BeO), boron Nitride (BN), silicon nitride (Si) 3 N 4 ) Or silicon carbide (SiC). In some embodiments, the second material of the cover plate 220 comprises aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ) Beryllium oxide (BeO), boron Nitride (BN), silicon nitride (Si) 3 N 4 ) Or silicon carbide (SiC). In some embodiments, the heating plate 140 and the cover plate 220 are made of the same material, but have different thermal conductivities (i.e., the material of the heating plate 140 has a first thermal conductivity and the cover plate 220 has a second thermal conductivity). For example, inIn some embodiments, the heating plate 140 is made of aluminum nitride having a first thermal conductivity, and the cover plate 220 is made of aluminum nitride having a second thermal conductivity.
Fig. 3 is a schematic cross-sectional side view of a substrate support 150 in accordance with at least some embodiments of the present disclosure. In some embodiments, the substrate support 150 includes a hollow shaft 306. In some embodiments, hollow shaft 306 is hollow shaft 134. In some embodiments, hollow shaft 306 comprises the same material as hollow shaft 206. The hollow shaft 306 has a lower portion 308 and an upper portion 310 coupled to the heating plate 140. In some embodiments, the upper portion 310 extends radially outward from the lower portion 308 and then extends vertically upward to the heating plate 140. In some embodiments, hollow shaft 306 is coupled to heating plate 140 along an outer periphery 316 of heating plate 140. In some embodiments, upper portion 310 is coupled to cover plate 220 at a location radially outward of heating plate 140 to advantageously reduce heat transfer from heating plate 140 to hollow shaft 206. In some embodiments, one or more lift pin openings 230 extend through the heater plate 140, the hollow shaft 306, and the cover plate 220 to receive lift pins, such as the lift pins 128.
Fig. 4 is a schematic cross-sectional side view of a substrate support 150 in accordance with at least some embodiments of the present disclosure. In some embodiments, the substrate support 150 includes a hollow shaft 406. In some embodiments, hollow shaft 406 is hollow shaft 134. In some embodiments, hollow shaft 406 comprises the same material as hollow shaft 206. In some embodiments, hollow shaft 406 has a lower portion 408 and an upper portion 410 coupled to heating plate 140. In some embodiments, upper portion 410 extends substantially linearly radially outward and upward from lower portion 408 to heating plate 140. In some embodiments, the upper portion 410 has a conical shape. In some embodiments, upper portion 410 is coupled to cover plate 220 at a location radially outward of heating plate 140 to advantageously reduce heat transfer from heating plate 140 to hollow shaft 406. In some embodiments, one or more lift pin openings 230 extend through the heater plate 140, the hollow shaft 406, and the cover plate 220 to receive lift pins, such as the lift pins 128.
Fig. 5 is a schematic cross-sectional side view of a substrate support 150 in accordance with at least some embodiments of the present disclosure. In some embodiments, the substrate support 150 includes a hollow shaft 506. In some embodiments, hollow shaft 506 is hollow shaft 134. In some embodiments, hollow shaft 506 comprises the same material as hollow shaft 206. In some embodiments, hollow shaft 506 has a lower portion 508 and an upper portion 510 coupled to heating plate 140. In some embodiments, upper portion 510 extends radially outward and upward from lower portion 508 to heating plate 140. In some embodiments, the upper portion 510 extends radially outward and upward in a non-linear or circular manner. In some embodiments, upper portion 510 is coupled to cover plate 220 at a location radially outward of heating plate 140 to advantageously reduce heat transfer from heating plate 140 to hollow shaft 506. In some embodiments, one or more lift pin openings 230 extend through the heater plate 140, the hollow shaft 506, and the cover plate 220 to receive lift pins, such as the lift pins 128.
Fig. 6 is a partially schematic cross-sectional side view of a heater plate 140 in accordance with at least some embodiments of the present disclosure. In some embodiments, the heating plate 140 includes an electrode 644 disposed or embedded within the heating plate 140 for generating a plasma in the interior space 132. The electrode 644 may comprise a Radio Frequency (RF) network and is coupled to a radio frequency power supply 650. In some embodiments, the heater plate 140 includes a plurality of plates 602 glued, fastened, or otherwise coupled together. For example, in some embodiments, one or more heating elements 112 may be sandwiched between two of the plurality of plates 602. In some embodiments, the electrode 112 may be sandwiched between two of the plurality of plates 602. In some embodiments, one or more heating elements 112 are disposed between a first plate 610 and a second plate 620 of the plurality of plates 602. In some embodiments, the electrode 644 is disposed between the second plate 620 and the third plate 630 of the plurality of plates 602.
While the foregoing is directed to embodiments of the present disclosure, various other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.

Claims (20)

1. A substrate support for use in a processing chamber, comprising:
a heating plate having an upper surface supporting a substrate and a lower surface opposite the upper surface, wherein the heating plate comprises a first material having a first thermal conductivity, and wherein a sidewall of the heating plate and the lower surface of the heating plate are covered with a cover plate comprising a second material having a second thermal conductivity less than the first thermal conductivity;
a hollow shaft coupled to the heating plate, wherein the hollow shaft comprises a third material having a third thermal conductivity, the third thermal conductivity being less than the first thermal conductivity; and
one or more heating elements disposed in the heating plate.
2. The substrate support of claim 1, wherein the hollow shaft is coupled to the heating plate vertically below the heating plate.
3. The substrate support of claim 1, wherein the hollow shaft is coupled to the heating plate along an outer periphery of the heating plate.
4. The substrate support of claim 1, wherein the hollow shaft has a lower portion and an upper portion coupled to the heating plate, wherein the upper portion extends radially outward from the lower portion and then extends vertically upward to the heating plate.
5. The substrate support of claim 1, wherein the hollow shaft has a lower portion and an upper portion coupled to the heating plate, wherein the upper portion extends radially outward and upward from the lower portion to the heating plate.
6. The substrate support of any one of claims 1 to 5, wherein the first thermal conductivity is greater than 130 watts/meter kelvin (W/(m-K)).
7. The substrate support of any one of claims 1 to 5, wherein the heating plate comprises one or more lift pin openings.
8. The substrate support of any one of claims 1 to 5, wherein the heating plate is composed of aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ) Beryllium oxide (BeO), boron Nitride (BN), silicon nitride (Si) 3 N 4 ) Or silicon carbide (SiC).
9. The substrate support of any one of claims 1 to 5, wherein the second material comprises aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ) Beryllium oxide (BeO), boron Nitride (BN), silicon nitride (Si) 3 N 4 ) Or silicon carbide (SiC).
10. The substrate support of any one of claims 1 to 5, wherein the first material and the second material comprise the same material.
11. The substrate support of any one of claims 1 to 5, wherein the first thermal conductivity is greater than 100 watts/meter kelvin (W/(m-K)).
12. The substrate support of any one of claims 1 to 5, wherein the second and third thermal conductivities are less than 100 watts/meter kelvin (W/(m-K)).
13. The substrate support of any one of claims 1 to 5, wherein the second material is the same material as the third material.
14. The substrate support of any one of claims 1 to 5, wherein the heating plate is made of aluminum nitride having the first thermal conductivity and the cover plate is made of aluminum nitride having the second thermal conductivity.
15. A processing chamber, comprising:
a chamber body defining an interior space; and
the substrate support of any one of claims 1 to 5, disposed in the interior space.
16. The processing chamber of claim 15, wherein the first thermal conductivity is greater than 100 watts/meter kelvin (W/(m-K)).
17. The processing chamber of claim 15, wherein the second thermal conductivity and the third thermal conductivity are less than 100 watts/meter kelvin (W/(m-K)).
18. The processing chamber of claim 15, wherein at least one of the first material and the second material comprises aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ) Beryllium oxide (BeO), boron Nitride (BN), silicon nitride (Si) 3 N 4 ) Or silicon carbide (SiC).
19. The processing chamber of claim 15, further comprising one or more lift pins disposed in the interior volume and configured to extend through one or more lift pin openings in the heating plate.
20. The processing chamber of claim 15, wherein the substrate support is a vacuum chuck.
CN202180065288.9A 2020-10-09 2021-10-07 Heated substrate support with minimized heat loss and increased uniformity Pending CN116420218A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063089688P 2020-10-09 2020-10-09
US63/089,688 2020-10-09
PCT/US2021/054047 WO2022076740A1 (en) 2020-10-09 2021-10-07 Heated substrate support to minimize heat loss and improve uniformity

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CN116420218A true CN116420218A (en) 2023-07-11

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KR (1) KR20230079218A (en)
CN (1) CN116420218A (en)
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US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
JP3092801B2 (en) * 1998-04-28 2000-09-25 信越半導体株式会社 Thin film growth equipment
WO2012050255A1 (en) * 2010-10-15 2012-04-19 주식회사 썬닉스 Stack-type heating stage having excellent temperature uniformity for a semiconductor process
JP6697363B2 (en) * 2015-10-30 2020-05-20 日本碍子株式会社 Semiconductor manufacturing equipment member, manufacturing method thereof, and heater with shaft
JP2018073613A (en) * 2016-10-28 2018-05-10 京セラ株式会社 heater

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WO2022076740A1 (en) 2022-04-14
TW202226413A (en) 2022-07-01
JP2023545067A (en) 2023-10-26

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