WO2012044281A1 - Pâte conductrice pour électrode de cellule solaire - Google Patents

Pâte conductrice pour électrode de cellule solaire Download PDF

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Publication number
WO2012044281A1
WO2012044281A1 PCT/US2010/050515 US2010050515W WO2012044281A1 WO 2012044281 A1 WO2012044281 A1 WO 2012044281A1 US 2010050515 W US2010050515 W US 2010050515W WO 2012044281 A1 WO2012044281 A1 WO 2012044281A1
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WO
WIPO (PCT)
Prior art keywords
electrode
fiber
paste
conductive paste
carbon fiber
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Application number
PCT/US2010/050515
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English (en)
Inventor
Ryoichiro Takahashi
Original Assignee
E. I. Du Pont De Nemours And Company
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Publication date
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Priority to PCT/US2010/050515 priority Critical patent/WO2012044281A1/fr
Publication of WO2012044281A1 publication Critical patent/WO2012044281A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • This invention relates to photovoltaic cell, and in particular, relates to improvement of conductive paste for electrode.
  • the manufacturing process of the silicon solar cells typically includes the formation of electrode by use of conductive paste.
  • the conductive paste includes a conductive particle such as silver, inorganic binder such as glass frit, organic medium and optional other additives.
  • the front electrode formed on the Iight-receiving area it is preferable for the front electrode formed on the Iight-receiving area to have a narrow line width.
  • the line width is merely narrowed, a decrease in cross-sectional area of the electrode will end up increasing electrode resistance and will thus end up decreasing optical conversion efficiency. Therefore, there is a need to increase the height, that is, to increase the aspect ratio, while narrowing the line width.
  • JP2006-054374 discloses a method for forming an electrode having a high aspect ratio by forming a groove for electrode formation on a substrate and applying the aforementioned conductive paste under reduced pressure into this groove for electrode formation, thereby forming the electrode.
  • JP2007-019106 discloses a method for forming an electrode having a high aspect ratio by using a conductive paste containing an adjusted quantity of organic matter and silver powder and having suitable viscosity and thixotropy. There is a need in the industry to improve conductive pastes that enable the production of an electrode with high aspect ratio.
  • An aspect of the present invention is the production of a conductive paste with a high aspect ratio.
  • Another aspect of the present invention is an electrode formed on the
  • Iight-receiving side of photovoltaic cell comprising conductive component, glass binder, and carbon fiber or metal fiber.
  • Another aspect of the present invention is a method for forming an electrode of photovoltaic cell, comprising steps of: applying a conductive paste on the Iight-receiving side of a silicon wafer, the conductive paste comprising conductive powder, glass frit, carbon fiber or metal fiber, and organic medium; drying the applied paste; and firing the dried paste.
  • an electrode having a large aspect ratio can be formed, and improvement of optical conversion efficiency through an increase in the Iight-receiving area can be expected.
  • Figure 1 is a process flow diagram illustrating the fabrication of an electrode of solar cell.
  • Figure 2 is a boxplot of the relationship between the fiber content and the height of the formed electrode.
  • FIG. 1A shows a p-type silicon substrate, 10.
  • an n-type diffusion layer, 20, of the reverse conductivity type is formed by the thermal diffusion of phosphorus (P) or the like.
  • Phosphorus oxychloride (POCI 3 ) is commonly used as the phosphorus diffusion source.
  • the diffusion layer, 20, is formed over the entire surface of the silicon substrate, 10.
  • This diffusion layer typically has a sheet resistivity on the order of several tens of ohms per square, and a thickness of about 0.3 to 0.5 ⁇ .
  • the diffusion layer, 20 is removed from most surfaces by etching so that it remains only on one main surface.
  • the resist is then removed using an organic solvent or the like.
  • a silicon nitride film, 30, is formed as an anti-reflection coating on the n-type diffusion layer, 20, to a thickness of typically about 700 to 900A in the manner shown in FIG. 1 D by a process such as plasma chemical vapor deposition (CVD).
  • a conductive paste (typically silver paste), 50, for the front (light-receiving side) electrode is screen printed then dried over the silicon nitride film, 30.
  • a backside silver or silver/aluminum paste, 70, and an aluminum paste, 60 are then screen printed and successively dried on the backside of the substrate. Firing is then carried out in a furnace at a temperature of approximately less than 1000°C for several seconds or for several minutes.
  • FIG. 1 F aluminum diffuses from the aluminum paste into the silicon substrate, 10, as a dopant during firing, forming a p+ layer, 40, containing a high concentration of aluminum dopant.
  • This layer is generally called the back surface field (BSF) layer, and helps to improve the energy conversion efficiency of the solar cell.
  • BSF back surface field
  • the aluminum paste is transformed by firing from a dried state, 60, to an aluminum back electrode, 61 .
  • the backside silver or silver/aluminum paste, 70 is fired at the same time, becoming a silver or silver/aluminum back electrode, 71 .
  • the aluminum electrode accounts for most areas of the back electrode, owing in part to the need to form a p+ layer, 40. Because soldering to an aluminum electrode is impossible, a silver back electrode is formed over portions of the back side as an electrode for interconnecting solar cells by means of copper ribbon or the like.
  • the front electrode-forming silver paste, 50 sinters and penetrates through the silicon nitride film, 30, during firing, and is thereby able to electrically contact the n-type layer, 20.
  • This type of process is generally called "fire through.” This fired through state is apparent in layer 51 of FIG 1 F.
  • the present invention provides an improved conductive paste for the light-receiving electrode, which enables the formation of an electrode with high aspect ratio.
  • One characteristic modification of the present invention resides in the addition of carbon fiber or metal fiber into the conductive paste.
  • the electrode can be manufactured by applying a conductive paste onto the silicon-based substrate.
  • the components of the conductive paste are discussed herein below.
  • Conductive powder is dispersed in an organic medium that acts as a carrier for the functional phase.
  • the conductive powder includes one or more of metal powder(s) selected from the group consisting of Ag, Pd, Ir, Cu, Ni, Al, Au, Su, Zn, Pt, Ru, Ti, and Co. Given the conductivity and the metal price, silver is preferable at present.
  • the conductive powder may preferably be coated or uncoated silver particles which are electrically conductive. When the silver particles are coated, they may be partially coated with a surfactant.
  • the surfactant may be selected from, but is not limited to, stearic acid, palmitic acid, a salt of stearate, a salt of palmitate and mixtures thereof. Other surfactants may be utilized including lauric acid, palmitic acid, oleic acid, stearic acid, capric acid, myristic acid and linolic acid.
  • the counter ion can be, but is not limited to, hydrogen, ammonium, sodium, potassium and mixtures thereof.
  • the particle shape of the conductive powder can be spherical or flake type. It is not especially limited in this present invention.
  • the particle size of the conductive powder is not subject to any particular limitation, although the average particle size [d50] of no more than 10 ⁇ , and preferably no more than 3 ⁇ , is desirable.
  • the conductive powder preferably accounts for, but not limited to, 70 to 96 wt % of the conductive paste.
  • the conductive paste of the present invention preferably contains an inorganic binder in the form of glass frit. Since the chemical composition of the glass frit is not important in the present invention, any glass frit can be used provided it is a glass frit used in electrically conductive pastes for electronic materials.
  • lead borosilicate glass is used preferably.
  • Lead borosilicate glass is a superior material in the present invention from the standpoint of both the range of the softening point and glass adhesion.
  • lead-free glass such as a bismuth silicate lead-free glass, can also be used from a viewpoint of environment.
  • the content of the inorganic binder in the form of the glass frit provided it is an amount that allows the object of the present invention to be achieved, it is 0.5 to
  • the inorganic binder 15.0wt% and preferably 1 .0 to 10.0wt% based on the weight of the paste. If the amount of the inorganic binder is less than 0.5wt%, adhesive strength may become inadequate. If the amount of the inorganic binder exceeds 15.0wt%, problems may be caused in the subsequent soldering step due to floating glass and so on. In addition, the resistance value as a conductor also increases.
  • An average particle size of the glass frit (d50) in the range of 0.5 -4.0 ⁇ is preferred, and in the range of 0.7 - 3.0 ⁇ is more preferred.
  • An average surface area of the glass frit (SA) in the range of 5.4 - 7.0 m 2 /g is preferred.
  • the softening point of the glass frit (Ts: second transition point of DTA) is preferred to be in the range of 450-650°C for glass containing at least PbO. For glass containing at least B12O3, the Ts is prefered to be in the range of 450-650°C. (3) Carbon Fiber and/or Metal Fiber
  • Carbon fiber and metal fiber contribute to preservation of the shape of the conductive paste before drying or firing.
  • the shape of a conventional paste not containing these inorganic fibers and only containing dispersed conductive powder and glass frit can be preserved to some extent, the shape breaks down and the aspect ratio decreases during the period from application or printing until drying or firing, or during firing. Since the paste containing the inorganic fiber maintains a high aspect ratio after application, the aspect ratio of the formed electrode can be improved.
  • the carbon fiber or the metal fiber is added with careful consideration given to the additive amount thereof, the resistance of the electrode itself will not increase as much.
  • the high conductivity of the fiber itself prevents a decrease in power generation efficiency resulting from the addition.
  • Another advantage of adding the inorganic fiber is that its presence inhibits excessive contraction during firing, and therefore avoids detachment of the electrode, Damage to the substrate can also be expected to decrease.
  • metal fiber As a metal fiber, one type or two or more types of metal fiber from the group consisting of silver (Ag), gold (Au), platinum (Pt), palladium (Pd), titanium (Ti), alloys thereof can be mentioned.
  • a commercially available metal fiber can be used, and a metal fiber having a shape and length adjusted with consideration given to applications for solar cell electrodes can also be used.
  • the metal fiber can be a fiber coated on a surface thereof with metal.
  • the concept of metal fiber in the present application includes not only a fiber consisting entirely of metal, but also includes a fiber coated on a surface thereof with metal.
  • a type of fiber comprising an inexpensive component such as polyester, polyamide, and polyolefin and coated with a metal on a surface thereof is more profitable than a type of fiber consisting entirely of expensive metal.
  • the method for manufacturing the fiber coated with the metal or on the material used inside For example, art mentioned in JP H1 1 (1999)-1 17179 can be applied.
  • carbon fiber there are no particular limitations on the carbon fiber, but use of the following fiber diameter or fiber length is preferred.
  • a carbon fiber manufactured by a vapor-phase growth method is
  • Such a fiber has the advantage that firing progresses easily because thermal conductivity is high, and such a fiber contributes to reduction of the manufacturing cost of solar cells .
  • VGCF manufactured by Showa Denko K. K., can be used as the carbon fiber.
  • the inorganic fiber can have a shape comprising a trunk and a branch. Such a configuration further improves toughness of the electrode because a sintered metal layer and the inorganic fiber are more complexly intertwined, and contact area of the sintered metal layer and the inorganic fiber is thus increased.
  • the amount of the inorganic fiber contained is preferably
  • the amount of the inorganic fiber is less than 0.01 wt%, the shape- preservation effect after printing is poor.
  • the amount of the inorganic fiber exceeds 2.0 wt%, power generation is greatly reduced, and furthermore, an opening in the screen easily becomes clogged with paste, and print performance deteriorates.
  • the metal fiber and the carbon fiber can be used together, and in such a case it is preferable to prepare the fibers such that the total content thereof falls within the aforementioned range.
  • the mean fiber diameter of the inorganic fiber used is preferably 50-500 nm, and is more preferably 100-200 nm. Furthermore, the average fiber length is preferably 1 -50 ⁇ and is more preferably 3-20 ⁇ . If the fiber length is less than 1 ⁇ , the ability to retain the silver powder and the glass frit, which are also contained materials, and the ability to retain a shape having a high aspect ratio deteriorates. Moreover, if 50 ⁇ is exceeded, a mesh portion of the screen easily becomes clogged with paste, and consequently print performance deteriorates.
  • the addives can be added to the conductive paste.
  • the conductive paste of the present invention could preferably further contain a metal oxide of one or more of the metals selected from Zn, Ag, Gd, Ce, Zr, Ti, Mn, Sn, Ru, Co, Fe, Cu and Cr.
  • the conductive paste contains more preferably ZnO as an additive.
  • the present invention of conductive paste could contain more preferably Ag 2 O as an additive as well as ZnO.
  • the particle size of the additional metal oxide additive is not subject to any particular limitation, although an average particle size of no more than 5 ⁇ , and preferably no more than 2 ⁇ , is desirable. (5) Organic Medium
  • the components of the paste are typically spread in an organic medium by mechanical mixing to form viscous compositions called
  • organic medium A wide variety of inert viscous materials can be used as organic medium.
  • the organic medium is desired to be one in which the inorganic components are dispersible with an adequate degree of stability.
  • the rheological properties of the medium is prefered to be such that they lend good application properties to the composition, including: stable
  • dispersion of solids appropriate viscosity and thixotropy for screen printing, appropriate wettability of the substrate and the paste solids, a good drying rate, and good firing properties.
  • the organic medium used in the conductive paste of the present invention is preferably a nonaqueous inert liquid.
  • the organic medium may or may not contain thickeners, stabilizers and/or other common additives.
  • the organic medium is typically a solution of polymer(s) in solvent(s). Additionally, a small amount of additives, such as surfactants, may be a part of the organic medium.
  • the most frequently used polymer for this purpose is ethyl cellulose.
  • polymers include ethylhydroxyethyl cellulose, wood rosin, mixtures of ethyl cellulose and phenolic resins, polymethacrylates of lower alcohols, and monobutyl ether of ethylene glycol monoacetate can also be used.
  • the most widely used solvents found in conductive pastes are ester alcohols and terpenes such as alpha or beta terpineol or mixtures thereof with other solvents such as kerosene, dibutylphthalate, butyl carbitol, butyl carbitol acetate, hexylene glycol and high boiling alcohols and alcohol esters.
  • volatile liquids for promoting rapid hardening after application on the substrate can be included in the medium.
  • the polymer present is preferably in the range of 2 to 25 wt% of the organic medium.
  • the solvent is preferably in the range of 70 to 98 wt% of the organic medium.
  • the ratio of organic medium in the conductive paste to the inorganic components in the dispersion is dependent on the method of applying the paste and the kind of organic medium used, and it can vary. Usually, the dispersion will contain 70-90 wt% of inorganic components and 10-30 wt% of organic medium in order to obtain good wetting.
  • An electrode having a high aspect ratio can be formed according to the present invention.
  • the specific aspect ratio (width: thickness) of the electrode is not particularly limited, but is preferably 1 :0.25 or more and is more preferably 1 :0.30 or more.
  • the maximum is not particularly limited, but about 1 :1 is practical.
  • FIG. 1A shows a step in which a substrate of single-crystal silicon or of multicrystalline silicon is provided typically, with a textured surface which reduces light reflection.
  • substrates are often used as sliced from ingots which have been formed from pulling or casting processes.
  • Substrate surface damage caused by tools such as a wire saw used for slicing and contamination from the wafer slicing step are typically removed by etching away about 10 to 20 ⁇ of the substrate surface using an aqueous alkali solution such as aqueous potassium hydroxide or aqueous sodium hydroxide, or using a mixture of hydrofluoric acid and nitric acid.
  • a step in which the substrate is washed with a mixture of hydrochloric acid and hydrogen peroxide may be added to remove heavy metals such as iron adhering to the substrate surface.
  • An antireflective textured surface is sometimes formed thereafter using, for example, an aqueous alkali solution such as aqueous potassium hydroxide or aqueous sodium hydroxide.
  • an aqueous alkali solution such as aqueous potassium hydroxide or aqueous sodium hydroxide.
  • the depth of the diffusion layer in this case can be varied by controlling the diffusion temperature and time, and is generally formed within a thickness range of about from 0.1 to 0.5 ⁇ . Especially when the emitter junction depth is from 0.1 ⁇ to 0.3 ⁇ , it is called Shallow-emitter type Solar cell.
  • the n-type layer formed in this way is represented in the diagram by reference numeral 20.
  • p-n separation on the front and backsides may be carried out by the method described in the background of the invention. These steps are not always necessary when a phosphorus-containing liquid coating material such as phosphosilicate glass (PSG) is applied onto only one surface of the substrate by a process, such as spin coating, and diffusion is effected by annealing under suitable conditions.
  • PSG phosphosilicate glass
  • the degree of completeness can be increased by employing the steps detailed in the background of the invention.
  • the diffusion layer, 20 is removed from most surfaces by etching so that it remains only on one main surface.
  • the resist is then removed using an organic solvent or the like.
  • a silicon nitride film or other insulating films including SiNx:H i.e., the insulating film comprises hydrogen for
  • silicon oxide film, 30, which functions as an antireflection coating is formed on the above-described n-type diffusion layer, 20.
  • This silicon nitride film, 30, lowers the surface reflectance of the solar cell to incident light, making it possible to greatly increase the electrical current generated.
  • the thickness of the silicon nitride film, 30, depends on its refractive index, although a thickness of about 700 to 900A is suitable for a refractive index of about 1 .9 to 2.0.
  • This silicon nitride film may be formed by a process such as low- pressure CVD, plasma CVD, or thermal CVD.
  • the starting materials are often dichlorosilane (S1CI2H2) and ammonia (NH 3 ) gas, and film formation is carried out at a temperature of at least 700°C.
  • thermal CVD pyrolysis of the starting gases at the high temperature results in the presence of substantially no hydrogen in the silicon nitride film, giving a compositional ratio between the silicon and the nitrogen of Si3N which is substantially stoichiometric.
  • the refractive index falls within a range of substantially 1 .96 to 1 .98.
  • this type of silicon nitride film is a very dense film whose characteristics, such as thickness and refractive index, remain unchanged even when subjected to heat treatment in a later step.
  • a titanium oxide film may be formed on the n-type diffusion layer, 20, instead of the silicon nitride film, 30, functioning as an antireflection coating.
  • the titanium oxide film is formed by coating a titanium-containing organic liquid material onto the n-type diffusion layer, 20, and firing, or by thermal CVD. It is also possible, in FIG. 1 D, to form a silicon oxide film on the n-type diffusion layer, 20, instead of the silicon nitride film 30 functioning as an antireflection layer.
  • the silicon oxide film is formed by thermal oxidation, thermal CVD or plasma CVD.
  • electrodes are formed by steps similar to those shown in
  • FIG. 1 E and FIG. 1 F That is, as shown in FIG. 1 E, aluminum paste, 60, and back side silver paste, 70, are screen printed onto the back side of the substrate, 10, as shown in FIG. 1 E and successively dried.
  • a front electrode-forming conductive paste is screen printed onto the silicon nitride film, 30, in the same way as on the back side of the substrate, 10, following which drying and firing are carried out in an infrared furnace typically at a set point temperature range of 580 to 975°C for a period of from one minute to more than ten minutes while passing through the furnace a mixed gas stream of oxygen and nitrogen.
  • the front electrode, 500 is made of the conductive paste of the present invention, and is capable of reacting and penetrating through the silicon nitride film, 30, during firing to achieve electrical contact with the n-type layer, 20 (fire through).
  • This fired-through state i.e., the extent to which the conductive paste on the front melts and passes through the silicon nitride film, 30, depends on the quality and thickness of the silicon nitride film, 30, the composition of the front electrode, and on the firing conditions.
  • the conversion efficiency and moisture resistance reliability of the solar cell clearly depend, to a large degree, on this fired- through state.
  • a conductive paste for solar cell electrode of this present invention can be used on not only p-type base solar cell but also any type of silicon solar cell such as n-type base solar cell.
  • I. Electrically functional conductive powder A mixture of 24 % of spherical silver powder [d50 2.3 ⁇ as determined with a laser scattering-type particle size distribution measuring apparatus] and 56 % of flake silver powder [d502.9 ⁇ ] were used. The total content of the silver powder was 80 wt% of the conductive paste.
  • Glass Frit Si-Pb-B based glass frit was used. The total content of the glass frit was adjusted depending on the content of the inorganic fiber as shown in Table 1 .
  • Organic Medium An organic medium consisting of mainly Ethyl cellulose resin and texanol was used. The content of the organic medium was 10 wt% of the conductive paste.
  • Inorganic fiber A carbon fiber (VGCF-H, Showa Denko K. K.) having a diameter of 150 nm, a length of 6 ⁇ , and a bulk density 0.08 g/cm3 was used. The amount of carbon fiber contained in the paste is shown in Table 1 .
  • every conductive paste contained 5.8wt% of ZnO as an additive.
  • Paste preparations were, in general, accomplished with the following procedure: The appropriate amount of solvent and the organic medium described above were weighed then mixed in a mixing can for 15 minutes, then silver powder, glass frit, and carbon fiber described above and ZnO as a metal additive were added and mixed for another 5 minutes. When well mixed, the paste was repeatedly passed through a 3-roll mill for at progressively increasing pressures from 0 to 400 psi. The gap of the rolls was adjusted to 1 mil.
  • Si wafers p-doped base and n-doped emitter with SiNx antireflection coatings
  • the sizes of the Si wafers were 38 mm square and 0.2 mm thickness.
  • Aluminum paste (PV322, E.I. Dupont de Nemours and Company) was screen printed on the back side of these Si wafers and then dried at the temperature of 150°C for 5 minutes. The printed pattern of alminium paste was
  • the electrode height ( ⁇ ) was measured after firing with Confocal laser scanning microscopy, Model OPTELICS C130, Lasertec Corporation.
  • FIG. 1 shows a box plot showing the relationship between the amount of fiber contained and the height of the formed electrode.

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Abstract

L'invention concerne une électrode formée sur la face de réception de lumière d'une cellule photovoltaïque, comprenant un composant conducteur, un liant de verre et une fibre de carbone ou une fibre métallique. Grâce à l'inclusion d'une fibre de carbone et d'une fibre métallique, il est possible de former une électrode ayant un facteur de forme élevé et d'obtenir une amélioration de l'efficacité de la conversion optique grâce à une augmentation de la surface de réception de lumière.
PCT/US2010/050515 2010-09-28 2010-09-28 Pâte conductrice pour électrode de cellule solaire WO2012044281A1 (fr)

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EP0421881A1 (fr) * 1989-10-05 1991-04-10 Electricite De France Matériau conducteur pour électrode, composant électrique et leur procédé de fabrication
JPH11117179A (ja) 1997-10-08 1999-04-27 Toho Rayon Co Ltd 金属被覆炭素繊維チョップドストランド、その製造方法、それを用いた繊維強化熱可塑性樹脂組成物、及び成形品
WO2002005294A1 (fr) * 2000-07-08 2002-01-17 Johnson Matthey Public Limited Company Encre electriquement conductrice
JP2006054374A (ja) 2004-08-13 2006-02-23 Shin Etsu Handotai Co Ltd 太陽電池の製造方法および太陽電池
JP2007019106A (ja) 2005-07-05 2007-01-25 Kyocera Chemical Corp 電極形成用導電性ペースト及び太陽電池セル
EP1873790A1 (fr) * 2005-03-29 2008-01-02 Toyo Aluminium Kabushiki Kaisha Composition de pate, electrode et dispositif de cellule solaire les comprenant
EP1993144A1 (fr) * 2006-03-07 2008-11-19 Murata Manufacturing Co. Ltd. Pate conductrice et cellule solaire
US20090104457A1 (en) * 2007-10-18 2009-04-23 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices: flux materials
WO2009146398A1 (fr) * 2008-05-30 2009-12-03 E. I. Du Pont De Nemours And Company Compositions conductrices et procédés d'utilisation dans la fabrication de dispositifs à semi-conducteurs
WO2009146356A1 (fr) * 2008-05-28 2009-12-03 E. I. Du Pont De Nemours And Company Conducteurs pour cellules photovoltaïques : compositions contenant des particules submicroniques

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0421881A1 (fr) * 1989-10-05 1991-04-10 Electricite De France Matériau conducteur pour électrode, composant électrique et leur procédé de fabrication
JPH11117179A (ja) 1997-10-08 1999-04-27 Toho Rayon Co Ltd 金属被覆炭素繊維チョップドストランド、その製造方法、それを用いた繊維強化熱可塑性樹脂組成物、及び成形品
WO2002005294A1 (fr) * 2000-07-08 2002-01-17 Johnson Matthey Public Limited Company Encre electriquement conductrice
JP2006054374A (ja) 2004-08-13 2006-02-23 Shin Etsu Handotai Co Ltd 太陽電池の製造方法および太陽電池
EP1873790A1 (fr) * 2005-03-29 2008-01-02 Toyo Aluminium Kabushiki Kaisha Composition de pate, electrode et dispositif de cellule solaire les comprenant
JP2007019106A (ja) 2005-07-05 2007-01-25 Kyocera Chemical Corp 電極形成用導電性ペースト及び太陽電池セル
EP1993144A1 (fr) * 2006-03-07 2008-11-19 Murata Manufacturing Co. Ltd. Pate conductrice et cellule solaire
US20090104457A1 (en) * 2007-10-18 2009-04-23 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices: flux materials
WO2009146356A1 (fr) * 2008-05-28 2009-12-03 E. I. Du Pont De Nemours And Company Conducteurs pour cellules photovoltaïques : compositions contenant des particules submicroniques
WO2009146398A1 (fr) * 2008-05-30 2009-12-03 E. I. Du Pont De Nemours And Company Compositions conductrices et procédés d'utilisation dans la fabrication de dispositifs à semi-conducteurs

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