WO2012043907A1 - Appareil de détection de rayonnement et procédé de détection de rayonnement - Google Patents

Appareil de détection de rayonnement et procédé de détection de rayonnement Download PDF

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Publication number
WO2012043907A1
WO2012043907A1 PCT/KR2010/006690 KR2010006690W WO2012043907A1 WO 2012043907 A1 WO2012043907 A1 WO 2012043907A1 KR 2010006690 W KR2010006690 W KR 2010006690W WO 2012043907 A1 WO2012043907 A1 WO 2012043907A1
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layer
electrode
charge
bottom electrode
radiation
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PCT/KR2010/006690
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English (en)
Korean (ko)
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김중석
고병훈
문범진
윤정기
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(주)디알텍
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Priority to PCT/KR2010/006690 priority Critical patent/WO2012043907A1/fr
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/246—Measuring radiation intensity with semiconductor detectors utilizing latent read-out, e.g. charge stored and read-out later
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Definitions

  • the present invention relates to a radiation detection device and a detection method for detecting radiation such as X-rays to generate image data.
  • the digital radiation detection apparatus is a device for acquiring a digital image by detecting information in a human body as an electrical image signal by an image detection sensor by direct X-ray irradiation without a film.
  • the digital radiation detection apparatus is largely divided into a direct method and an indirect method according to a method of detecting a radiographic image.
  • the direct method is a method of directly detecting an electrical signal generated by radiation transmitted through the human body using amorphous selenium (or amorphous silicon) and TFT (Thin Film Transistor).
  • the indirect method uses a fluorescent material such as CsI, which converts radiation into visible light, and acquires a radiographic image by using a light receiving device such as a CCD or a photodiode. .
  • the radiation detector using a conventional TFT generates a large amount of noise, and also decreases the detectable quantum efficiency (DQE) because the noise tends to increase together with a large area. Since one thin film transistor is required for each pixel in the panel, the large area is difficult and the cost is increased.
  • DQE detectable quantum efficiency
  • a radiation detection apparatus and a radiation detection method capable of increasing the resolution of an image.
  • a radiation detection apparatus and a radiation detection method capable of increasing the resolution of a radiographic image and improving a complicated manufacturing process by reading a radiographic image using plasma light may be provided.
  • a radiation image may be generated using a simple electrode structure for plasma generation.
  • the plasma light may be used to achieve not only radiographic image reading but also initialization of the light conductive layer.
  • FIG. 1 is a view showing a cross section of the radiation detection apparatus according to an embodiment.
  • FIG. 2A to 2C are diagrams illustrating a radiation detection operation of the radiation detection apparatus of FIG. 1.
  • FIG. 3 is a flow chart illustrating a radiation detection method according to an embodiment.
  • FIG. 4 is a cross-sectional view of a radiation detection apparatus according to another embodiment.
  • 5A to 5D are diagrams illustrating a radiation detection operation of the radiation detection apparatus of FIG. 4.
  • FIG. 6 is a flowchart illustrating a radiation detection method according to another embodiment.
  • FIG. 7 is a diagram for explaining a read operation of the radiation detection apparatus.
  • a radiation detection apparatus includes an upper electrode layer for transmitting radiation, a first insulating layer for blocking charge flowing from the upper electrode layer, a photoconductive layer exhibiting photoconductivity by radiation, and a photoconductive layer from plasma discharge.
  • a second insulating layer to be protected a lower substrate formed to face the second insulating layer, a partition wall forming a cell structure inside the second insulating layer and the lower substrate, and an inner chamber of the cell structure formed by the partition wall.
  • a gas layer for generating plasma light emission a bottom electrode formed on the lower substrate, a first RF electrode formed on the bottom electrode, connected to ground, a second RF electrode configured to apply RF power for plasma generation, and a first RF And a third insulating layer formed to surround the electrode and the second RF electrode to insulate the first and second RF electrodes from the gas layer and the bottom electrode.
  • a radiation detection method of a radiation detection apparatus comprising: generating a pair of positive and negative charges in a photoconductive layer by irradiation, and a positive or negative charge is caused by a high voltage applied to an upper electrode layer, and the second insulating layer
  • the cations or anions generated by the plasma generation in the gas layer are formed by the steps of stacking the layers, generating plasma in the gas layer according to the application of RF power, and positive or negative charges accumulated between the photoconductive layer and the second insulating layer. Accumulating to the bottom electrode and reading the density of cations or anions accumulated at the bottom electrode.
  • a radiation detection apparatus includes an upper electrode layer that transmits radiation, a first photoconductive layer that exhibits photoconductivity by radiation, and a charge collection layer that collects charges generated by photoconductivity in the first photoconductive layer. And a second photoconductive layer that exhibits photoconductivity by back light, and a charge that is charged by the charge collected by the charge collection layer and corresponds to the amount of charged charge, and is generated by photoconductivity in the second photoconductive layer.
  • a lower transparent electrode layer that reads the first insulating layer, a first insulating layer for protecting the lower transparent electrode layer from plasma discharge, a lower substrate facing the first insulating layer, and a partition wall forming a cell structure inside the first insulating layer and the lower substrate.
  • a gas layer included in an inner chamber of the cell structure formed by the partition wall to generate plasma light a bottom electrode formed on the lower substrate, and a top of the bottom electrode.
  • a method of detecting radiation of a radiation detection apparatus including generating positive and negative charge pairs in a first photoconductive layer in response to irradiation with a high voltage applied to an upper electrode layer, and generating the positive and negative charge pairs, respectively. Separating the electrode layer and the charge collection layer, collecting positive or negative charge in the charge collection layer, applying RF power to the second RF electrode to generate plasma light, and generating the second light by the plasma light. Generating a positive and negative charge pair in the conductive layer, reading a signal corresponding to the charge collected from the lower transparent electrode layer to the charge collection layer and corresponding to the charge transferred from the second photoconductive layer, and reading the signal Generating a radiographic image using the.
  • FIG. 1 is a view showing a cross section of the radiation detection apparatus according to an embodiment.
  • the radiation detection apparatus 10 of FIG. 1 includes an upper electrode layer 101, a second insulating layer 102, a photoconductive layer 103, a second insulating layer 104, and a plasma generating unit 111, 112, 113, and 114. , 115, 116, 117, 118, 119).
  • the upper electrode layer 101 transmits radiation.
  • X-ray, alpha-ray, gamma-ray, and the like may be used as the radiation.
  • the first insulating layer 102 prevents charge from flowing from the upper electrode layer 101 to the photoconductive layer 103 when a high voltage is applied to the upper electrode layer 101.
  • the photoconductive layer 103 exhibits photoconductivity by radiation transmitted through the upper electrode layer 101.
  • the photoconductive layer 103 generates a pair of positive charges (or holes) and negative charges (or electrons) upon irradiation.
  • the photoconductive layer 103 generates a pair of positive and negative charges in proportion to the signal strength of the transmitted radiation.
  • the amount of radiation transmitted to the photoconductive layer 103 may vary according to the component of the object.
  • the photoconductive layer 103 may be an amorphous selenium compound containing amorphous selenium (a-Se, amorphous selenium), As 2 Se 3 or As.
  • the second insulating layer 104 protects the photoconductive layer 103 from plasma discharge.
  • the plasma generating units 111, 112, 113, 114, 115, 116, 117, 118, and 119 include a partition wall 111, a gas layer 112, two RF electrodes 114, 116, and a third insulating layer 113. 115, a bottom electrode 117, a lower substrate 118, and a fluorescent layer 119.
  • the lower substrate 118 is formed to face the second insulating layer 104.
  • the gas layer 112 is included in the inner chamber of the cell structure formed by the partition wall 111 to generate plasma light emission.
  • the plasma light is transmitted to the light conductive layer 103 through the second insulating layer 104.
  • the partition wall 111 forms a cell structure in the second insulating layer 104 and the lower substrate 118. Specifically, the partition wall 111 is formed between the second insulating layer 104 and the third insulating layers 113 and 115 to form a sealed cell structure.
  • the partition wall 111 is formed to distinguish pixels of the radiation detection apparatus 10.
  • the partition wall 111 prevents cross talk between pixels and may be surrounded in two directions or have various shapes such as two directions, six directions, and eight directions according to a desired pixel shape, and determine a resolution of the substrate.
  • the partition wall 111 may be manufactured by a conventional PDP manufacturing method, and the area and height may be adjusted to increase the response area of the radiation in each pixel.
  • the bottom electrode 117 is formed on the lower substrate 118.
  • the bottom electrode 117 may include a quartz layer 117-1 and an electrode layer 117-2.
  • the quartz layer 117-1 is in contact with the gas layer 112.
  • the electrode layer 117-2 is disposed to contact the lower substrate 118 and to be connected to the data processor 200.
  • the RF electrodes 114 and 116 are formed on the bottom electrode 117.
  • the first RF electrode 114 is grounded, and the second RF electrode 116 is formed to receive RF power from the RF power supply 300.
  • the plasma is generated in the gas layer 112 by the RF power supplied from the second RF electrode 116.
  • the plasma can be efficiently generated by the two RF electrodes 114 and 116 per pixel.
  • the third insulating layers 113 and 115 are formed to surround the two RF electrodes 114 and 116, respectively, to insulate the two RF electrodes 114 and 116 from the gas layer 112 and the bottom electrode 117.
  • the fluorescent layer 119 is formed to surround the gas layer 112 along the partition wall 111 to the third insulating layers 113 and 115.
  • the fluorescent layer 119 is formed so that the plasma light generated by the gas layer 112 is reflected to generate plasma light of higher illuminance.
  • the fluorescent layer 119 may be optionally included.
  • the data processor 200 is connected to the bottom electrode 117.
  • the data processor 200 may calculate a cation or anion density accumulated in the bottom electrode 117, and generate a radiographic image using the calculated density.
  • the data processor 200 calculates the density of the cations or anions accumulated in the bottom electrode 117 using the vibration period of the resonance frequency generated in the quartz layer 117-1, and based on the calculated density of the cations or anions. To generate a radiographic image.
  • the natural vibration frequency (resonance frequency) of the quartz layer 117-1 can be known in advance, and the vibration period, which is a time interval between vibration peaks of the natural vibration frequency of the quartz layer 117-1, is the quartz layer 117-1.
  • the vibration frequency transmitted from the quartz layer 117-1 for a predetermined sensing period is transmitted to the data processor 200 through the electrode layer 117-2, and the data processor 200 uses the transmitted vibration frequency.
  • the vibration period may be determined, and the density of the ions collided with the quartz layer 117-1 may be calculated using the determined vibration period.
  • the time taken for the initialization of the radiation detection apparatus 10 to retake the image using the back light device is approximately several seconds to several tens of seconds or more. This delays the time for acquiring the medical image, causing inconvenience to both the patient and the photographer.
  • the photoconductive material included in the radiation detection apparatus 10 is irradiated with more than necessary light and neutralized electrically, the electrical performance of the photoconductive material itself decreases when used for a long time, and the radiation detection device ( 10) There is a risk of shortening the service life.
  • the RF power supply 300 is connected at the second RF electrode 116 so that the photoconductivity is electrically neutralized in the photoconductive layer 103.
  • An RF power source for initializing the photoconductive layer 102 may be applied.
  • the RF power supply 300 supplies RF power to the second RF electrode 116.
  • the RF power supply unit 300 may supply RF power of 13.56 MHz and 2 GHz, for example.
  • the RF power supply unit 300 may supply RF power to the second RF electrode 116 during the image sensing period for detecting the radiographic image.
  • the RF power supply unit 300 may supply RF power to initialize the photoconductive layer 103 after sensing the radiographic image. Through this, the initialization of the light conducting layer 103 as well as the radiographic image reading may be achieved using the plasma light.
  • the RF power supply 300 may control the intensity of the back light, that is, the plasma light, by adjusting the size of the RF power.
  • the RF power supply unit 300 may control the exposure time of the plasma light according to the supply of the RF power. Therefore, the RF power supply 300 may control the amount of plasma light generated by adjusting the intensity and exposure time of the plasma light.
  • FIG. 1 illustrates the structure of the radiation detection apparatus 10 corresponding to one pixel.
  • the data processing unit 200 has a high radiation absorption amount in the dark portion and a high radiation absorption amount in the bright portion for each pixel. Can be determined. In this case, the amount of back light irradiation required for the initialization of the photoconductive layer 103 for each pixel is different.
  • the RF power supply 300 may adjust the size of the RF power and the plasma light exposure time so that the back light irradiation amount is relatively low in the pixel of the portion where the brightness value of the pixel obtained from the data processor 200 is relatively low.
  • the RF power supply 300 may adjust the size of the RF power and the plasma light exposure time so that the back light irradiation amount is relatively high in the pixel of the portion where the brightness value of the pixel obtained from the data processor 210 is relatively high.
  • the photoconductive layer 103 of the radiation detection apparatus 10 may be exposed to more than necessary light, thereby improving the occurrence of problems of fatigue accumulation and shortening of life.
  • the voltage supply unit 400 may apply a high voltage to the upper electrode layer 101 or ground the upper electrode layer 101 according to the operation of the radiation detection apparatus 10.
  • FIG. 2A to 2C are diagrams illustrating a radiation detection operation of the radiation detection apparatus of FIG. 1.
  • radiation is irradiated to the radiation detecting apparatus 10.
  • the radiation reaches the photoconductive layer 103 via the upper electrode layer 101 and the first insulating layer 102.
  • a pair of positive and negative charges are generated by radiation, and the positive and negative charges are directed toward the upper electrode layer 101 and the second insulating layer 104 by the high voltage applied to the upper electrode layer 101, respectively.
  • the data processor 200 may calculate an ion density accumulated in the bottom electrode 117, that is, a density of a cation or an anion, and generate a radiographic image using the calculated ion density.
  • the radiographic image corresponds to the ion density of the bottom electrode 117 that accumulates in correspondence with the charge accumulated and moved between the photoconductive layer 103 and the second insulating layer 104.
  • FIG. 3 is a flow chart illustrating a radiation detection method according to an embodiment.
  • Positive or negative charges are separated by the high voltage applied to the upper electrode layer 101, and the separated positive or negative charges are accumulated between the photoconductive layer 103 and the second insulating layer 104 (330). For example, when a high voltage of negative potential is applied to the upper electrode layer 101, negative charge is accumulated between the photoconductive layer 103 and the second insulating layer 104.
  • plasma is generated in the gas layer 112 by applying RF power to the second RF electrode 116 (340).
  • Cations or anions generated by plasma generation corresponding to the positive or negative charges accumulated between the photoconductive layer 130 and the second insulating layer 104, move to the bottom electrode 117 (350).
  • negative charges accumulate between the photoconductive layer 103 and the second insulating layer 104, negative ions will move to the bottom electrode 117.
  • the density of the cations or anions moved from the bottom electrode 117 may be read to generate a radiographic image (360).
  • FIG. 4 is a cross-sectional view of a radiation detection apparatus according to another embodiment.
  • the radiation detecting apparatus 20 of FIG. 4 includes an upper electrode layer 121, a first photoconductive layer 122, a charge collection layer 123, a second photoconductive layer 124, a lower transparent electrode layer 125, and a first electrode.
  • the insulating layer 126 and the plasma generator 111, 112, 113, 114, 115, 116, 117, 118, and 119 are included.
  • the upper electrode layer 121 transfers radiation to the first photoconductive layer 122.
  • the first photoconductive layer 122 exhibits photoconductivity by radiation. That is, the first photoconductive layer 122 generates a pair of positive charges (or holes) and negative charges (or electrons) in response to irradiation. The first photoconductive layer 122 generates positive and negative pairs in proportion to the signal strength of the transmitted radiation. When there is an object such as a human body or an object requiring irradiation by radiation on the upper electrode layer 101, the amount of radiation transmitted to the first photoconductive layer 122 may vary according to the component of the object.
  • the first photoconductive layer 122 may be an amorphous selenium compound containing amorphous selenium (a-Se, amorphous selenium), As 2 Se 3 or As.
  • the charge collection layer 123 collects charges due to photoconductivity in the first photoconductive layer 122 to operate as a floating electrode. Collecting the charge by the charge collection layer 123 includes blocking the charge accumulated between the first photoconductive layer 122 and the charge collection layer 123 by the charge collection layer 123. Blocked electrons allow electrons to cross the barrier when the energy barrier is lowered by an external electric field or temperature change.
  • the thickness d 1 of the first photoconductive layer 102 is formed to be much thicker than the thickness d 2 of the second photoconductive layer 104, so that an electric field applied to the first photoconductive layer 122 is relatively.
  • the charge collection layer 123 may be formed of a metal layer, a dielectric layer, or a combination of a metal layer and a dielectric layer in order to collect charges corresponding to an image according to radiation to the charge collection layer 123.
  • the charge collection layer 123 is a metal layer
  • silver, copper, gold, aluminum, calcium, tungsten, zinc, nickel, iron, platinum, tin, lead, manganese, constantan, mercury, and nichrome , Carbon, germanium, silicon, glass, quartz, polyethylene terephthalate (PET), teflon, and the like may be used.
  • organic dielectric materials such as BCB, parylene, aC: H (F), polyimide (PI), polyarylene ether (Farorinated Amorphous Carbon), SiO 2 , Si 3 Inorganic dielectric materials such as N 4 , Polysilsequioxane, Methyl silane and the like, porous dielectric materials such as Xetogel / Aerogel, PCL (Polycaprolactone) and the like may be used.
  • the charge collection layer 123 is composed of a metal layer, a dielectric layer, or a combination of the metal layer and the dielectric layer, the charge generated in the first photoconductive layer 122 can be efficiently transferred, the manufacturing is simple, and the short time
  • the radiation detection apparatus can be manufactured at low cost. In particular, compared to the case of using the doped semiconductor in the charge collection layer 123, the manufacturing cost can be reduced and easily manufactured.
  • the second photoconductive layer 124 exhibits photoconductivity by back light for reading. That is, the second photoconductive layer 124 generates a pair of positive and negative charges in proportion to the signal intensity of the transmitted back light.
  • the second photoconductive layer 124 may be an amorphous selenium compound containing amorphous selenium (a-Se, amorphous selenium), As 2 Se 3 or As.
  • the lower transparent electrode layer 125 is charged by the charge collected by the charge collection layer 123.
  • the lower transparent electrode layer 105 is formed of a transparent material so that back light (here, plasma light) can reach the second photoconductive layer 124.
  • the lower transparent electrode layer 105 may be formed of a material such as indium tin oxide (ITO) and indium zinc oxide (IZO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • the data processor 200 generates a radiographic image by reading a signal corresponding to a charged charge from the lower transparent electrode layer 125.
  • the radiation detection apparatus 10 of FIG. 1 shows a cross section of a structure corresponding to one pixel of a radiation detection apparatus that is actually used, and includes a lower transparent electrode layer on a pixel array or pixel row or pixel column basis in a pixel array constituting a radiographic image. The entire radiographic image can be obtained using the signal read out at 105.
  • the first insulating layer 126 protects the lower transparent electrode layer 125 from plasma discharge.
  • the configuration of the plasma generators 111, 112, 113, 114, 115, 116, 117, 118, and 119 is the plasma generators 111, 112, 113, 114, 115, 116, 117, 118, and 119 of FIG. 1. Perform the same configuration and operation as.
  • the lower substrate 118 is formed to face the first insulating layer 126.
  • the partition wall 111 forms a cell structure inside the first insulating layer 126 and the lower substrate 118.
  • the gas layer 112 is included in the inner chamber of the cell structure formed by the partition wall 111 to generate plasma light emission.
  • the bottom electrode 117 is disposed on the lower substrate 118.
  • the third insulating layers 113 and 115 are formed to surround the two RF electrodes 114 and 116, respectively, to insulate the gas layer 112 and the bottom electrode 117.
  • the RF electrodes 114 and 116 are formed on the bottom electrode 117.
  • the first RF electrode 114 is connected to the ground, and the second RF electrode 116 is formed such that an RF power source for generating plasma is applied to the gas layer 112.
  • the fluorescent layer 119 is formed to surround the gas layer up to the third insulating layers 113 and 115 along the partition wall 111.
  • the fluorescent layer 119 may be optionally included.
  • the data processor 210 is connected to the lower transparent electrode layer 125 to generate a radiographic image using a signal corresponding to the read electric charge.
  • the RF power supply 300 supplies RF power to the second RF electrode 116.
  • the RF power supply unit 300 may supply RF power of 13.56 MHz and 2 GHz, for example.
  • the RF power supply 300 may supply RF power to the second RF electrode 116 during the image sensing period to read the radiographic image.
  • the RF power supply unit 300 may supply RF power to initialize the second photoconductive layer 124 after sensing the radiographic image. Through this, the initialization of the second light conductive layer 124 as well as the radiographic image reading may be achieved using the plasma light.
  • the RF power supply 300 may control the intensity of the back light, that is, the plasma light, by adjusting the size of the RF power.
  • the RF power supply unit 300 may control the exposure time of the plasma light according to the supply of the RF power. Therefore, the RF power supply 300 may control the amount of plasma light generated by adjusting the intensity and exposure time of the plasma light.
  • the voltage supply unit 400 may apply a high voltage to the upper electrode layer 101 or ground the upper electrode layer 101 according to the operation of the radiation detection apparatus 10.
  • the RF power supply 300 supplies RF power to the second RF electrode 116.
  • the detector 500 is connected to the bottom electrode 117 to measure the density of cations or anions generated by plasma generation in the gas layer 112.
  • the sensing unit 500 as in the operation of the data processing unit 200 in the radiation detection apparatus 10 of FIGS. 1 to 2C, has an oscillation frequency transmitted from the quartz layer 117-1 for a predetermined sensing period, and the electrode layer 117. -2) is transmitted to the data processing unit 200, the data processing unit 200 determines the vibration period by using the transmitted vibration frequency, and hit the quartz layer 117-1 using the determined vibration period The density of the ions can be calculated.
  • the data processor 200 calculates the density of positive or negative ions accumulated in the bottom electrode 117, whereas the ion density detected by the detector 500 is independent of the polarity of plasma ions. There is a difference in the density of both positive and negative ions impinging on the bottom electrode in one gas layer 112.
  • the RF power supply 300 electrically neutralizes the photoconductivity of the second photoconductive layer 124, that is, based on the brightness value of the image obtained by the data processor 210 to initialize the second photoconductive layer 124.
  • RF power may be adjusted and applied to the second RF electrode 116.
  • the RF power supply 300 and the data processor 210 may be configured to communicate with each other.
  • the data processor 210 may determine that the dark portion has a high radiation absorption amount and the bright portion has a high radiation absorption amount for each pixel. In this case, the amount of back light irradiation required for the initialization of the second photoconductive layer 124 is different for each pixel.
  • the RF power supply 300 may adjust the size of the RF power and the plasma light exposure time so that the back light irradiation amount is relatively low in the pixel of the portion where the brightness value obtained from the data processor 210 is relatively low.
  • the RF power supply 300 may adjust the size of the RF power and the plasma light exposure time so that the back light irradiation amount is relatively high in the pixel of the portion where the brightness value obtained from the data processor 210 is relatively high.
  • the second photoconductive layer 124 of the radiation detection apparatus 20 may be exposed to more than necessary light, thereby improving the occurrence of problems of fatigue accumulation and shortening of life.
  • 5A to 5D are diagrams illustrating a radiation detection operation of the radiation detection apparatus of FIG. 4.
  • the negative charge generated in the first photoconductive layer 122 is moved to the charge collection layer 123, and the charge collection layer 123 collects the negative charge of the first photoconductive layer 122.
  • the operation of collecting charges by the charge collection layer 123 means that charges are accumulated at an interface between the first photoconductive layer 122 and the charge collection layer 123.
  • the negative charge accumulated at the interface between the charge collection layer 123 and the first photoconductive layer 122 may be blocked by an electric field applied to the first photoconductive layer 122.
  • the charge collection layer 123 is described as an example of a metal layer.
  • the positive and negative charge pairs and the charge collection layer generated in the upper electrode layer 121 will vary depending on the composition and shape of the object.
  • the amount of negative charge collected in 123 will also vary.
  • the negative charge collected by the charge collection layer 123 corresponds to the detected image.
  • the second photoconductive layer 124 functions as a capacitor. As shown in FIG. 5B, positive charges are charged to the lower transparent electrode layer 125. The lower transparent electrode layer 125 is charged with positive charges corresponding to the number of negative charges collected by the charge collection layer 123.
  • the radiographic imaging step is completed, the application of the high voltage to the upper electrode layer 121 is stopped and grounded.
  • the RF power supply unit 300 supplies RF power to the second RF electrode 116, plasma light is generated in the gas layer 112.
  • the generated plasma light passes through the lower transparent electrode layer 125 as back light and reaches the second photoconductive layer 124.
  • the RF power supply unit 300 supplies RF power to the second RF electrode 116 while the first RF electrode 114 is grounded, an electric field E is generated between the RF electrodes 114 and 116. As a result, plasma is generated in the gas layer 112, and cations and anions are generated in the gas layer 112. In addition, the second photoconductive layer 124 generates a pair of positive and negative charges due to the plasma light arriving from the gas layer 112.
  • negative charges generated by the second photoconductive layer 114 may be read by the image processor 200 by positive charges charged on the lower transparent electrode layer 115, and image signals may be processed.
  • the positive charge generated in the second photoconductive layer 124 moves to the charge collection layer 123 by the negative charge collected by the charge collection layer 123, so that the charge collection layer 123 is neutralized.
  • FIG. 6 is a flowchart illustrating a radiation detection method according to another embodiment.
  • a high voltage is applied to the upper electrode layer 121 (610) and is irradiated with the high voltage (620).
  • a pair of positive and negative charges is generated in the first photoconductive layer 122 according to the irradiation (630).
  • the generated positive and negative charge pairs are separated toward the upper electrode layer 121 and the charge collection layer 123, respectively, so that positive or negative charges are accumulated and collected in the charge collection layer 103 (640).
  • the radiographic image is captured by the radiation detecting apparatus 20, and the radiographic image reading process is performed.
  • the radiographic imaging step ends, the application of the high voltage to the upper electrode layer 121 is stopped, and is grounded. In a state where the first RF electrode 114 is grounded, plasma light generated by applying RF power to the second RF electrode 116 is irradiated as the back light toward the second photoconductive layer 124 (650).
  • a pair of positive and negative charges is generated in the second photoconductive layer 124 by the plasma light (660).
  • a signal corresponding to the charge collected from the lower transparent electrode layer 125 to the charge collection layer 123 and corresponding to the charge transferred from the second photoconductive layer 124 is read 670.
  • the data processor 210 generates a radiographic image using the read signal (680).
  • FIG. 7 is a diagram for explaining a read operation of the radiation detection apparatus.
  • the radiation detection apparatus 30 is a figure which shows the whole structure of the radiation detection apparatus 20 of FIG.
  • the circular region 700 represents a plasma discharge region.
  • Two horizontal lines connected to the plasma discharge region 700 represent lines of the first RF electrode 114 and the second RF electrode 116, respectively. Since the RF power supply unit 300 supplies RF power for each column of the pixel array 720, a radiographic image may be read for each column of the pixel array 720, and a radiographic image of the entire pixel array 720 may be obtained. .
  • RF power when RF power is supplied to the pixels 710 of the first row and turned on, light is emitted from the pixels 710 of the first row, and the lower transparent electrode layer 125 of FIG. 3 is emitted by the emitted plasma light. Radiation images can be read from. Next, the RF power supply of the pixels 710 of the first column is stopped, and the RF power is supplied to the pixels of the second column. By repeating such an operation, a radiographic image may be read for the entire pixel array 720.
  • the data processor 200 corresponding to the data processor 210 is connected to the bottom electrode 117 of FIG. 1. Connected, the sensing unit 500 will not be included.
  • Computer-readable recording media include all kinds of recording devices that store data that can be read by a computer system. Examples of computer-readable recording media include ROM, RAM, CD-ROM, magnetic tape, floppy disk, optical disk, and the like.
  • the computer readable recording medium can also be distributed over network coupled computer systems so that the computer readable code is stored and executed in a distributed fashion.

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  • Measurement Of Radiation (AREA)

Abstract

L'invention concerne un appareil de détection de rayonnement susceptible d'augmenter la résolution d'image et un procédé de détection de rayonnement. L'appareil de détection de rayonnement selon un mode de réalisation comprend : une couche d'électrode supérieure permettant de transférer le rayonnement ; une première couche d'isolation permettant de bloquer les charges appliquées à partir de la couche d'électrode supérieure ; une couche photoconductrice permettant d'indiquer la photoconductivité par le rayonnement ; une deuxième couche d'isolation permettant de protéger la couche photoconductrice de la décharge de plasma ; un substrat inférieur qui est formé pour faire face à la deuxième couche d'isolation ; une nervure de barrière permettant de former une structure de pile à l'intérieur de la deuxième couche d'isolation et du substrat inférieur ; une couche de gaz qui est comprise dans une chambre interne de la structure de pile formée par la nervure de barrière pour provoquer l'émission de plasma ; une électrode de fond formée au niveau du substrat inférieur ; une première électrode RF qui est formée au niveau d'une partie supérieure de l'électrode de fond et est raccordée à la masse ; une seconde électrode RF qui est formée pour recevoir la puissance RF permettant de générer le plasma ; et une troisième couche d'isolation qui est formée pour entourer la première électrode RF et la seconde électrode RF et pour isoler la première électrode RF et la seconde électrode RF de la couche de gaz et de l'électrode de fond.
PCT/KR2010/006690 2010-09-30 2010-09-30 Appareil de détection de rayonnement et procédé de détection de rayonnement WO2012043907A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/KR2010/006690 WO2012043907A1 (fr) 2010-09-30 2010-09-30 Appareil de détection de rayonnement et procédé de détection de rayonnement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2010/006690 WO2012043907A1 (fr) 2010-09-30 2010-09-30 Appareil de détection de rayonnement et procédé de détection de rayonnement

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WO2012043907A1 true WO2012043907A1 (fr) 2012-04-05

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033002A (ja) * 2003-07-14 2005-02-03 Toshiba Corp 放射線検出器およびその製造方法
JP2005268722A (ja) * 2004-03-22 2005-09-29 Toshiba Corp 放射線検出器およびその製造方法
JP2007059798A (ja) * 2005-08-26 2007-03-08 Toshiba Corp 放射線検出器
KR20080056641A (ko) * 2006-12-18 2008-06-23 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 방사선 검출기

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033002A (ja) * 2003-07-14 2005-02-03 Toshiba Corp 放射線検出器およびその製造方法
JP2005268722A (ja) * 2004-03-22 2005-09-29 Toshiba Corp 放射線検出器およびその製造方法
JP2007059798A (ja) * 2005-08-26 2007-03-08 Toshiba Corp 放射線検出器
KR20080056641A (ko) * 2006-12-18 2008-06-23 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 방사선 검출기

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