WO2012020930A3 - 정전용량형 압력센서 및 그의 제조방법 - Google Patents

정전용량형 압력센서 및 그의 제조방법 Download PDF

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Publication number
WO2012020930A3
WO2012020930A3 PCT/KR2011/005364 KR2011005364W WO2012020930A3 WO 2012020930 A3 WO2012020930 A3 WO 2012020930A3 KR 2011005364 W KR2011005364 W KR 2011005364W WO 2012020930 A3 WO2012020930 A3 WO 2012020930A3
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WO
WIPO (PCT)
Prior art keywords
hollow
insulating film
disposed
pressure sensor
sealing film
Prior art date
Application number
PCT/KR2011/005364
Other languages
English (en)
French (fr)
Other versions
WO2012020930A2 (ko
Inventor
황학인
이대성
신규식
Original Assignee
전자부품연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 전자부품연구원 filed Critical 전자부품연구원
Priority to US13/814,304 priority Critical patent/US8754453B2/en
Publication of WO2012020930A2 publication Critical patent/WO2012020930A2/ko
Publication of WO2012020930A3 publication Critical patent/WO2012020930A3/ko

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0069—Electrical connection means from the sensor to its support
    • G01L19/0076—Electrical connection means from the sensor to its support using buried connections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

본 발명은 압력 검출시 공동 이외의 영역에서 잡음으로 작용하는 기생 정전용량을 최소화하여 미소 센서를 구현할 수 있는 정전용량형 압력센서 및 그의 제조방법을 제공하는데 그 목적이 있다. 이를 위해, 본 발명은 하부전극으로 기능하는 기판과, 상기 기판 상에 형성된 제1 절연막과, 상기 제1 절연막 상에 형성된 공동과, 상기 공동과 연통하는 개구부를 가지며, 상기 공동을 덮도록 상기 제1 절연막 상에 형성된 제2 절연막과, 상기 개구부를 매개로 상기 개구부와 상기 공동의 일부가 매립되도록 전도성 재질로 형성된 밀봉막과, 상기 공동과 중첩되도록 상기 제2 절연막 상에 형성된 상부전극을 포함하는 정전용량형 압력센서를 제공한다. 따라서, 본 발명에 의하면, 공동을 형성한 후 상기 공동의 양측부에 전도성 재질로 밀봉막을 앵커(anchor) 형상으로 형성하고, 상기 밀봉막과 전기적으로 분리되어 상기 공동과 중첩되는 상부전극을 형성하여 압력 검출시 실질적으로 영향을 미치는 공동 영역을 상기 밀봉막을 통해 특정 영역으로 제한함으로써 압력 검출시 공동 이외의 영역에서 잡음으로 작용하는 기생 정전용량을 최소화하여 미소 센서를 구현할 수 있다.
PCT/KR2011/005364 2010-08-13 2011-07-21 정전용량형 압력센서 및 그의 제조방법 WO2012020930A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/814,304 US8754453B2 (en) 2010-08-13 2011-07-21 Capacitive pressure sensor and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0078321 2010-08-13
KR1020100078321A KR101215919B1 (ko) 2010-08-13 2010-08-13 정전용량형 압력센서 및 그의 제조방법

Publications (2)

Publication Number Publication Date
WO2012020930A2 WO2012020930A2 (ko) 2012-02-16
WO2012020930A3 true WO2012020930A3 (ko) 2012-05-03

Family

ID=45568005

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/005364 WO2012020930A2 (ko) 2010-08-13 2011-07-21 정전용량형 압력센서 및 그의 제조방법

Country Status (3)

Country Link
US (1) US8754453B2 (ko)
KR (1) KR101215919B1 (ko)
WO (1) WO2012020930A2 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102472678B (zh) * 2009-07-24 2014-04-23 罗姆股份有限公司 半导体压力传感器、压力传感器装置、电子设备以及半导体压力传感器的制造方法
US8368152B2 (en) * 2011-04-18 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS device etch stop
US8900975B2 (en) 2013-01-03 2014-12-02 International Business Machines Corporation Nanopore sensor device
US9347840B2 (en) * 2013-07-18 2016-05-24 Xulite Semiconductor Products, Inc. Two dimensional material-based pressure sensor
US10444104B2 (en) * 2016-11-30 2019-10-15 Texas Instruments Incorporated Methods and apparatus to calibrate micro-electromechanical systems
US10197466B2 (en) 2016-11-30 2019-02-05 Texas Instruments Incorporated Methods and apparatus to calibrate micro-electromechanical systems
US10386256B2 (en) 2016-11-30 2019-08-20 Texas Instruments Incorporated Methods and apparatus to calibrate micro-electromechanical systems
KR102529493B1 (ko) 2017-11-23 2023-05-04 현대자동차주식회사 연료전지 시스템용 압력 센서

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63250865A (ja) * 1987-04-08 1988-10-18 Nippon Denso Co Ltd 圧力検出素子及びその製造方法
JPH11223569A (ja) * 1998-02-04 1999-08-17 Denso Corp 半導体圧力センサの製造方法
JP2009296569A (ja) * 2008-05-02 2009-12-17 Canon Inc 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子

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DE3310643C2 (de) * 1983-03-24 1986-04-10 Karlheinz Dr. 7801 Schallstadt Ziegler Drucksensor
DE69922727T2 (de) * 1998-03-31 2005-12-15 Hitachi, Ltd. Kapazitiver Druckwandler
JP4296731B2 (ja) * 2001-07-18 2009-07-15 株式会社デンソー 静電容量型圧力センサの製造方法
JP3778128B2 (ja) * 2002-05-14 2006-05-24 株式会社デンソー メンブレンを有する半導体装置の製造方法
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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPS63250865A (ja) * 1987-04-08 1988-10-18 Nippon Denso Co Ltd 圧力検出素子及びその製造方法
JPH11223569A (ja) * 1998-02-04 1999-08-17 Denso Corp 半導体圧力センサの製造方法
JP2009296569A (ja) * 2008-05-02 2009-12-17 Canon Inc 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子

Also Published As

Publication number Publication date
US20130126994A1 (en) 2013-05-23
KR20120015845A (ko) 2012-02-22
WO2012020930A2 (ko) 2012-02-16
KR101215919B1 (ko) 2012-12-27
US8754453B2 (en) 2014-06-17

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