WO2012018684A1 - Encapsulating resin composition - Google Patents
Encapsulating resin composition Download PDFInfo
- Publication number
- WO2012018684A1 WO2012018684A1 PCT/US2011/045894 US2011045894W WO2012018684A1 WO 2012018684 A1 WO2012018684 A1 WO 2012018684A1 US 2011045894 W US2011045894 W US 2011045894W WO 2012018684 A1 WO2012018684 A1 WO 2012018684A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resin composition
- encapsulating resin
- percent
- inorganic particles
- mass
- Prior art date
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 109
- 239000010954 inorganic particle Substances 0.000 claims abstract description 49
- 239000002245 particle Substances 0.000 claims abstract description 38
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 37
- 239000003822 epoxy resin Substances 0.000 claims abstract description 36
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 22
- 150000003014 phosphoric acid esters Chemical class 0.000 claims abstract description 18
- 150000003609 titanium compounds Chemical class 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 abstract description 18
- 150000001875 compounds Chemical class 0.000 description 35
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 34
- -1 siloxane anhydride Chemical class 0.000 description 30
- 239000004593 Epoxy Substances 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 19
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 239000000047 product Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 11
- 125000004432 carbon atom Chemical group C* 0.000 description 11
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 11
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 11
- 229920003986 novolac Polymers 0.000 description 11
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 10
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 10
- 125000000217 alkyl group Chemical group 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 125000003118 aryl group Chemical group 0.000 description 7
- 230000035515 penetration Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000007822 coupling agent Substances 0.000 description 6
- 125000003700 epoxy group Chemical group 0.000 description 6
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 6
- 150000002989 phenols Chemical class 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- UMHKOAYRTRADAT-UHFFFAOYSA-N [hydroxy(octoxy)phosphoryl] octyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OP(O)(=O)OCCCCCCCC UMHKOAYRTRADAT-UHFFFAOYSA-N 0.000 description 5
- 125000001931 aliphatic group Chemical group 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- FKBMTBAXDISZGN-UHFFFAOYSA-N 5-methyl-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1C(C)CCC2C(=O)OC(=O)C12 FKBMTBAXDISZGN-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 150000008065 acid anhydrides Chemical class 0.000 description 4
- 125000002723 alicyclic group Chemical group 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 230000009477 glass transition Effects 0.000 description 4
- MUTGBJKUEZFXGO-UHFFFAOYSA-N hexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21 MUTGBJKUEZFXGO-UHFFFAOYSA-N 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- HTDKEJXHILZNPP-UHFFFAOYSA-N dioctyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OCCCCCCCC HTDKEJXHILZNPP-UHFFFAOYSA-N 0.000 description 3
- XMQYIPNJVLNWOE-UHFFFAOYSA-N dioctyl hydrogen phosphite Chemical compound CCCCCCCCOP(O)OCCCCCCCC XMQYIPNJVLNWOE-UHFFFAOYSA-N 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 125000001165 hydrophobic group Chemical group 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920001610 polycaprolactone Polymers 0.000 description 3
- 239000004632 polycaprolactone Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- IEKHISJGRIEHRE-UHFFFAOYSA-N 16-methylheptadecanoic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O IEKHISJGRIEHRE-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- FLROJJGKUKLCAE-UHFFFAOYSA-N 3-amino-2-methylphenol Chemical class CC1=C(N)C=CC=C1O FLROJJGKUKLCAE-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- QXBYUPMEYVDXIQ-UHFFFAOYSA-N 4-methyl-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound CC1CCCC2C(=O)OC(=O)C12 QXBYUPMEYVDXIQ-UHFFFAOYSA-N 0.000 description 2
- LQOPXMZSGSTGMF-UHFFFAOYSA-N 6004-79-1 Chemical compound C1CC2C3C(=O)OC(=O)C3C1C2 LQOPXMZSGSTGMF-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- 150000001638 boron Chemical class 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 150000007973 cyanuric acids Chemical class 0.000 description 2
- ZWAJLVLEBYIOTI-UHFFFAOYSA-N cyclohexene oxide Chemical group C1CCCC2OC21 ZWAJLVLEBYIOTI-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 2
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 150000003505 terpenes Chemical group 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- KNDQHSIWLOJIGP-UMRXKNAASA-N (3ar,4s,7r,7as)-rel-3a,4,7,7a-tetrahydro-4,7-methanoisobenzofuran-1,3-dione Chemical compound O=C1OC(=O)[C@@H]2[C@H]1[C@]1([H])C=C[C@@]2([H])C1 KNDQHSIWLOJIGP-UMRXKNAASA-N 0.000 description 1
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 description 1
- KMOUUZVZFBCRAM-UHFFFAOYSA-N 1,2,3,6-tetrahydrophthalic anhydride Chemical compound C1C=CCC2C(=O)OC(=O)C21 KMOUUZVZFBCRAM-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- UWFRVQVNYNPBEF-UHFFFAOYSA-N 1-(2,4-dimethylphenyl)propan-1-one Chemical compound CCC(=O)C1=CC=C(C)C=C1C UWFRVQVNYNPBEF-UHFFFAOYSA-N 0.000 description 1
- HIQAWCBKWSQMRQ-UHFFFAOYSA-N 16-methylheptadecanoic acid;2-methylprop-2-enoic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(=C)C(O)=O.CC(=C)C(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O HIQAWCBKWSQMRQ-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical group C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- NPKDKOFJAUBGLT-UHFFFAOYSA-N 2,2-bis(2-methylprop-2-enoyloxy)acetic acid Chemical compound CC(=C)C(=O)OC(C(O)=O)OC(=O)C(C)=C NPKDKOFJAUBGLT-UHFFFAOYSA-N 0.000 description 1
- JTINZFQXZLCHNS-UHFFFAOYSA-N 2,2-bis(oxiran-2-ylmethoxymethyl)butan-1-ol Chemical compound C1OC1COCC(CO)(CC)COCC1CO1 JTINZFQXZLCHNS-UHFFFAOYSA-N 0.000 description 1
- IXQGCWUGDFDQMF-UHFFFAOYSA-N 2-Ethylphenol Chemical class CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 1
- HDPLHDGYGLENEI-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)propan-2-yloxymethyl]oxirane Chemical compound C1OC1COC(C)COCC1CO1 HDPLHDGYGLENEI-UHFFFAOYSA-N 0.000 description 1
- SHKUUQIDMUMQQK-UHFFFAOYSA-N 2-[4-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COCCCCOCC1CO1 SHKUUQIDMUMQQK-UHFFFAOYSA-N 0.000 description 1
- WTYYGFLRBWMFRY-UHFFFAOYSA-N 2-[6-(oxiran-2-ylmethoxy)hexoxymethyl]oxirane Chemical compound C1OC1COCCCCCCOCC1CO1 WTYYGFLRBWMFRY-UHFFFAOYSA-N 0.000 description 1
- KUAUJXBLDYVELT-UHFFFAOYSA-N 2-[[2,2-dimethyl-3-(oxiran-2-ylmethoxy)propoxy]methyl]oxirane Chemical compound C1OC1COCC(C)(C)COCC1CO1 KUAUJXBLDYVELT-UHFFFAOYSA-N 0.000 description 1
- FEDLEBCVFZMHBP-UHFFFAOYSA-N 2-amino-3-methylphenol Chemical compound CC1=CC=CC(O)=C1N FEDLEBCVFZMHBP-UHFFFAOYSA-N 0.000 description 1
- HCPJEHJGFKWRFM-UHFFFAOYSA-N 2-amino-5-methylphenol Chemical compound CC1=CC=C(N)C(O)=C1 HCPJEHJGFKWRFM-UHFFFAOYSA-N 0.000 description 1
- ZMXYNJXDULEQCK-UHFFFAOYSA-N 2-amino-p-cresol Chemical compound CC1=CC=C(O)C(N)=C1 ZMXYNJXDULEQCK-UHFFFAOYSA-N 0.000 description 1
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical class CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 1
- LJKDOMVGKKPJBH-UHFFFAOYSA-N 2-ethylhexyl dihydrogen phosphate Chemical compound CCCCC(CC)COP(O)(O)=O LJKDOMVGKKPJBH-UHFFFAOYSA-N 0.000 description 1
- YIKVZDICBNEEOZ-UHFFFAOYSA-N 2-ethylhexyl dihydrogen phosphite Chemical compound CCCCC(CC)COP(O)O YIKVZDICBNEEOZ-UHFFFAOYSA-N 0.000 description 1
- PFANXOISJYKQRP-UHFFFAOYSA-N 2-tert-butyl-4-[1-(5-tert-butyl-4-hydroxy-2-methylphenyl)butyl]-5-methylphenol Chemical compound C=1C(C(C)(C)C)=C(O)C=C(C)C=1C(CCC)C1=CC(C(C)(C)C)=C(O)C=C1C PFANXOISJYKQRP-UHFFFAOYSA-N 0.000 description 1
- WVRNUXJQQFPNMN-VAWYXSNFSA-N 3-[(e)-dodec-1-enyl]oxolane-2,5-dione Chemical compound CCCCCCCCCC\C=C\C1CC(=O)OC1=O WVRNUXJQQFPNMN-VAWYXSNFSA-N 0.000 description 1
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 1
- 229940018563 3-aminophenol Drugs 0.000 description 1
- MECNWXGGNCJFQJ-UHFFFAOYSA-N 3-piperidin-1-ylpropane-1,2-diol Chemical compound OCC(O)CN1CCCCC1 MECNWXGGNCJFQJ-UHFFFAOYSA-N 0.000 description 1
- ZFEQSERZJMLTHK-UHFFFAOYSA-N 4-(4-hydroxyphenyl)-2,3,5,6-tetramethylphenol Chemical compound CC1=C(O)C(C)=C(C)C(C=2C=CC(O)=CC=2)=C1C ZFEQSERZJMLTHK-UHFFFAOYSA-N 0.000 description 1
- VESRBMGDECAMNH-UHFFFAOYSA-N 4-[2-(4-hydroxyphenyl)propan-2-yl]-2,3,5,6-tetramethylphenol Chemical compound CC1=C(C(=C(C(=C1O)C)C)C(C)(C)C1=CC=C(C=C1)O)C VESRBMGDECAMNH-UHFFFAOYSA-N 0.000 description 1
- RPJFWRZEEKJTGN-UHFFFAOYSA-N 4-[2-(4-hydroxyphenyl)propan-2-yl]-2,6-dimethylphenol Chemical compound CC1=C(O)C(C)=CC(C(C)(C)C=2C=CC(O)=CC=2)=C1 RPJFWRZEEKJTGN-UHFFFAOYSA-N 0.000 description 1
- QGNGOGOOPUYKMC-UHFFFAOYSA-N 4-hydroxy-6-methylaniline Chemical compound CC1=CC(O)=CC=C1N QGNGOGOOPUYKMC-UHFFFAOYSA-N 0.000 description 1
- DBVYWVYKOMMBGY-UHFFFAOYSA-N 5,6-di(propan-2-ylidene)cyclohexa-1,3-dien-1-ol Chemical class CC(C)=C1C=CC=C(O)C1=C(C)C DBVYWVYKOMMBGY-UHFFFAOYSA-N 0.000 description 1
- UXQFGCIAJSWBTO-UHFFFAOYSA-N 5-methyl-4-[(5-methyl-7-oxabicyclo[4.1.0]heptan-4-yl)methyl]-7-oxabicyclo[4.1.0]heptane-4-carboxylic acid Chemical compound C1CC2OC2C(C)C1(C(O)=O)CC1CCC2OC2C1C UXQFGCIAJSWBTO-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- XAYDWGMOPRHLEP-UHFFFAOYSA-N 6-ethenyl-7-oxabicyclo[4.1.0]heptane Chemical compound C1CCCC2OC21C=C XAYDWGMOPRHLEP-UHFFFAOYSA-N 0.000 description 1
- MNMYUIQDDJHUNG-UHFFFAOYSA-N 8-methyl-4-oxatricyclo[5.2.1.02,6]decane-3,5-dione Chemical compound O=C1OC(=O)C2C1C1CC(C)C2C1 MNMYUIQDDJHUNG-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- CETBWLDEMDGRDR-UHFFFAOYSA-N C(C1CO1)C=1C(C(C(C(C1)(N)CC1CO1)(N)CC1CO1)(N)CC1CO1)(CC1CO1)CC1CO1 Chemical compound C(C1CO1)C=1C(C(C(C(C1)(N)CC1CO1)(N)CC1CO1)(N)CC1CO1)(CC1CO1)CC1CO1 CETBWLDEMDGRDR-UHFFFAOYSA-N 0.000 description 1
- NDSXSCFKIAPKJG-UHFFFAOYSA-N CC(C)O[Ti] Chemical compound CC(C)O[Ti] NDSXSCFKIAPKJG-UHFFFAOYSA-N 0.000 description 1
- XOLINEAWXJYFNE-UHFFFAOYSA-K CC(C)[Ti+3].CC(=C)C([O-])=O.CC(=C)C([O-])=O.CC(=C)C([O-])=O Chemical compound CC(C)[Ti+3].CC(=C)C([O-])=O.CC(=C)C([O-])=O.CC(=C)C([O-])=O XOLINEAWXJYFNE-UHFFFAOYSA-K 0.000 description 1
- CVTVBVFXZDGZOB-UHFFFAOYSA-K CC(C)[Ti+3].[O-]C(=O)C=C.[O-]C(=O)C=C.[O-]C(=O)C=C Chemical compound CC(C)[Ti+3].[O-]C(=O)C=C.[O-]C(=O)C=C.[O-]C(=O)C=C CVTVBVFXZDGZOB-UHFFFAOYSA-K 0.000 description 1
- SRORDPCXIPXEAX-UHFFFAOYSA-N CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC.CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC Chemical compound CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC.CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC SRORDPCXIPXEAX-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- JYFHYPJRHGVZDY-UHFFFAOYSA-N Dibutyl phosphate Chemical compound CCCCOP(O)(=O)OCCCC JYFHYPJRHGVZDY-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- KKUKTXOBAWVSHC-UHFFFAOYSA-N Dimethylphosphate Chemical compound COP(O)(=O)OC KKUKTXOBAWVSHC-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical group C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- CTKINSOISVBQLD-UHFFFAOYSA-N Glycidol Chemical compound OCC1CO1 CTKINSOISVBQLD-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000004110 Zinc silicate Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- YUWBVKYVJWNVLE-UHFFFAOYSA-N [N].[P] Chemical compound [N].[P] YUWBVKYVJWNVLE-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical group C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 1
- LMMDJMWIHPEQSJ-UHFFFAOYSA-N bis[(3-methyl-7-oxabicyclo[4.1.0]heptan-4-yl)methyl] hexanedioate Chemical compound C1C2OC2CC(C)C1COC(=O)CCCCC(=O)OCC1CC2OC2CC1C LMMDJMWIHPEQSJ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- BNMJSBUIDQYHIN-UHFFFAOYSA-N butyl dihydrogen phosphate Chemical compound CCCCOP(O)(O)=O BNMJSBUIDQYHIN-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- XENVCRGQTABGKY-ZHACJKMWSA-N chlorohydrin Chemical compound CC#CC#CC#CC#C\C=C\C(Cl)CO XENVCRGQTABGKY-ZHACJKMWSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- QBCOASQOMILNBN-UHFFFAOYSA-N didodecoxy(oxo)phosphanium Chemical compound CCCCCCCCCCCCO[P+](=O)OCCCCCCCCCCCC QBCOASQOMILNBN-UHFFFAOYSA-N 0.000 description 1
- UCQFCFPECQILOL-UHFFFAOYSA-N diethyl hydrogen phosphate Chemical compound CCOP(O)(=O)OCC UCQFCFPECQILOL-UHFFFAOYSA-N 0.000 description 1
- AXDCOWAMLFDLEP-UHFFFAOYSA-N dimethoxyphosphoryl dimethyl phosphate Chemical compound COP(=O)(OC)OP(=O)(OC)OC AXDCOWAMLFDLEP-UHFFFAOYSA-N 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- ASMQGLCHMVWBQR-UHFFFAOYSA-M diphenyl phosphate Chemical compound C=1C=CC=CC=1OP(=O)([O-])OC1=CC=CC=C1 ASMQGLCHMVWBQR-UHFFFAOYSA-M 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- QVKQJEWZVQFGIY-UHFFFAOYSA-N dipropyl hydrogen phosphate Chemical compound CCCOP(O)(=O)OCCC QVKQJEWZVQFGIY-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- VTIXMGZYGRZMAW-UHFFFAOYSA-N ditridecyl hydrogen phosphite Chemical compound CCCCCCCCCCCCCOP(O)OCCCCCCCCCCCCC VTIXMGZYGRZMAW-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000006735 epoxidation reaction Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- XGZNHFPFJRZBBT-UHFFFAOYSA-N ethanol;titanium Chemical compound [Ti].CCO.CCO.CCO.CCO XGZNHFPFJRZBBT-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 150000002357 guanidines Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- GQZXNSPRSGFJLY-UHFFFAOYSA-N hydroxyphosphanone Chemical compound OP=O GQZXNSPRSGFJLY-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 150000004780 naphthols Chemical class 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- BQZVDHLPECSTCE-UHFFFAOYSA-K octanoate propan-2-olate titanium(4+) Chemical compound CC(C)O[Ti+3].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O.CCCCCCCC([O-])=O BQZVDHLPECSTCE-UHFFFAOYSA-K 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- YPNZYYWORCABPU-UHFFFAOYSA-N oxiran-2-ylmethyl 2-methylprop-2-enoate;styrene Chemical compound C=CC1=CC=CC=C1.CC(=C)C(=O)OCC1CO1 YPNZYYWORCABPU-UHFFFAOYSA-N 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical class [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- CMPQUABWPXYYSH-UHFFFAOYSA-N phenyl phosphate Chemical compound OP(O)(=O)OC1=CC=CC=C1 CMPQUABWPXYYSH-UHFFFAOYSA-N 0.000 description 1
- IGALFTFNPPBUDN-UHFFFAOYSA-N phenyl-[2,3,4,5-tetrakis(oxiran-2-ylmethyl)phenyl]methanediamine Chemical compound C=1C(CC2OC2)=C(CC2OC2)C(CC2OC2)=C(CC2OC2)C=1C(N)(N)C1=CC=CC=C1 IGALFTFNPPBUDN-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920000962 poly(amidoamine) Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical group [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- XSMMCTCMFDWXIX-UHFFFAOYSA-N zinc silicate Chemical compound [Zn+2].[O-][Si]([O-])=O XSMMCTCMFDWXIX-UHFFFAOYSA-N 0.000 description 1
- 235000019352 zinc silicate Nutrition 0.000 description 1
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01067—Holmium [Ho]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Definitions
- the present invention relates to an encapsulating resin composition and also to a semiconductor device encapsulated using the encapsulating resin composition.
- U.S. Patent Application Publication No. 2005/0129956 describes an underfill composition comprising at least one epoxy resin in combination with at least one epoxy hardener, the at least one epoxy hardener comprising at least one difunctional siloxane anhydride.
- Japanese Unexamined Patent Application Publication No. 2004-256646 describes a resin composition for underfilling, which contains an epoxy resin, a curing agent, a curing accelerator and an inorganic filler, wherein the content of a polyfunctional epoxy resin is from 5 to 20 percent by mass relative to the total quantity of epoxy resin, a phenolic compound and an acid anhydride are used as the curing agent, and the content of the phenolic compound relative to the total quantity of curing agent is from 3 to 20 percent by mass.
- encapsulating resin compositions are generally highly filled with inorganic particles.
- inorganic particles having a relatively large average particle diameter are used in encapsulating resin compositions in order to lower a viscosity of the composition.
- the present invention is an encapsulating resin composition containing an epoxy resin, a curing agent, inorganic particles, an organic titanium compound and a phosphoric acid ester.
- the average particle diameter of the inorganic particles is about 10 ⁇ or less.
- the amount of inorganic particles relative to a total amount of the encapsulating resin composition is about 60 percent by mass or more.
- the amount of organic titanium compound relative to the total quantity of the encapsulating resin composition is about 1 percent by mass or more and about 5 percent by mass or less.
- the amount of phosphoric acid ester relative to the total quantity of the encapsulating resin composition is about 0.5 percent by mass or more and about 3 percent by mass or less.
- an encapsulating resin composition is provided that is excellent in terms of thermal expansion coefficient and flowability and that can easily penetrate into a narrow gap.
- Epoxy resins that can be used in the encapsulating resin composition of the present invention include aliphatic, alicyclic, aromatic or heterocyclic monomeric or oligomeric epoxy compounds. These materials generally have, on average, at least one polymerizable epoxy group per molecule, and may have at least 1.5 or at least 2 polymerizable epoxy groups per molecule. In certain modes, it is possible to use a polyfunctional epoxy compound having three or four polymerizable epoxy groups per molecule.
- the epoxy compound may be a pure compound or may be a mixture of compounds containing one, two, or more epoxy groups per molecule.
- the epoxy compounds mentioned above may have any type of main chain and may contain substituent groups.
- allowable substituent groups include, but are not limited to: halogens, ester groups, ethers, sulfonate groups, siloxane groups, nitro groups, phosphate groups and the like.
- the epoxy equivalent value of the epoxy compound can generally be altered within a range of from 50 to 2,000.
- oligomeric epoxy compounds include, but are not limited to: linear oligomers having terminal epoxy groups (i.e., a diglycidyl ether of a polyoxyalkylene glycol), oligomers having skeletal epoxy units (i.e., polybutadiene polyepoxide), and oligomers having pendant epoxy groups (i.e., a glycidyl methacrylate oligomer or co-oligomer).
- R is a radical having a valency of n, n being an integer between 1 and 6.
- R can be an aromatic group, an alicyclic group, an aliphatic group or a combination thereof.
- Typical epoxy compounds include glycidyl ethers of polyhydric phenols obtained by reacting a polyhydric phenol with an excess of a chlorohydrin such as epichlorohydrin (for example, 2,2-bis-(2,3-epoxypropoxyphenol)-propane).
- epichlorohydrin for example, 2,2-bis-(2,3-epoxypropoxyphenol)-propane.
- aromatic epoxy compounds examples include, but are not limited to: a diglycidyl ether of bisphenol A (bisphenol A type epoxy resin), a diglycidyl ether of bisphenol F
- bisphenol F type epoxy resin bisphenol F type epoxy resin
- a diglycidyl ether of 4,4'-dihydroxybiphenyl oligomers of these diglycidyl ethers
- polyglycidyl ethers of cresol novolac resins cresol novolac type epoxy resins
- polyglycidyl ethers of phenol novolac resins phenol novolac type epoxy resins
- Examples of the alicyclic epoxy compounds include, but are not limited to: compounds obtained by hydrogenating the aromatic epoxy compounds mentioned above, such as hydrogenated bisphenol A type epoxy compounds and hydrogenated bisphenol F type epoxy compounds.
- compounds containing a cyclohexene oxide group such as vinyl cyclohexene monoxide, l ,2-epoxy-4-vinyl cyclohexane, l ,2:8,9-diepoxylimonene, and epoxy cyclohexane carboxylates such as 3,4-epoxycyclohexenylmethyl-3',4'- epoxycyclohexene carboxylate, 3,4-epoxycyclohexenylmethyI-3,4-epoxycyclohexane carboxylate, 3,4-epoxy-2-methylcyclohexylmethyl-3,4-epoxy-2-methylcyclohexane carboxylate and bis(3,4-epoxy-6-methylcyclohex
- the aliphatic epoxy compounds include glycidyl ethers of aliphatic polyhydric alcohols or alkylene oxide adducts thereof. Examples include, but are not limited to: ethylene glycol diglycidyl ether, di(ethylene glycol) diglycidyl ether, propylene glycol diglycidyl ether, tri(propylene glycol) diglycidyl ether, neopentyl glycol diglycidyl ether, 1 ,4-butane diol diglycidyl ether, 1,6-hexane diol diglycidyl ether, trimethylolpropane triglycidyl ether, trimethylolpropane diglycidyl ether, poly(ethylene glycol) diglycidyl ether and the like.
- Epoxy compounds having a glycidylamino group are epoxy compounds (epoxy resins) obtained by epoxidation by reacting amines and an epihalohydrin, and examples thereof include aminophenol type epoxy resins, triglycidyl isocyanurates, tetraglycidyl diaminodiphenylmethane, tetraglycidyl meta-xylenediamine and hexaglycidyl triaminobenzene.
- aminophenol type epoxy resins are obtained by epoxidizing aminophenols using publicly known methods.
- aminophenols include, but are not limited to:
- aminophenols and aminocresols such as 2-aminophenol, 3-aminophenol, 4-aminophenol, 2- amino-m-cresol, 2-amino-p-cresol, 3-amino-o-cresol, 4-amino-m-cresol and 6-amino-m-cresol.
- epoxy resins able to be used include, but are not limited to, copolymers of acrylic acid esters of glycidol (such as glycidyl acrylate and glycidyl methacrylate) with one or more copolymerizable vinyl compounds.
- This type of copolymer includes styrene-glycidyl methacrylate and methyl methacrylate-glycidyl acrylate copolymers.
- an epoxy-functional silicon which is a polydimethyl siloxane in which silicon atoms have been substituted with epoxyalkyl groups.
- epoxy resins mentioned above it is particularly suitable to use a bisphenol A type epoxy resin, a bisphenol F type epoxy resin or an aminophenol type epoxy resin from the perspective of characteristics after curing the encapsulating resin composition.
- a bisphenol A type epoxy resin and a bisphenol F type epoxy resin or a three-component system obtained by further adding an aminophenol type epoxy resin to a bisphenol A type epoxy resin and a bisphenol F type epoxy resin it is preferable to use both a bisphenol A type epoxy resin and a bisphenol F type epoxy resin or a three-component system obtained by further adding an aminophenol type epoxy resin to a bisphenol A type epoxy resin and a bisphenol F type epoxy resin.
- An amount of the epoxy resin is generally 20 percent by mass or less, and from 10 to 20 percent by mass in some embodiments, relative to a total amount of the encapsulating resin composition.
- the curing agent contained in the encapsulating resin composition of the present invention can be a routine curing agent used to cure epoxy compounds. Specific examples thereof include, but are not limited to: amino compounds, acid anhydride compounds, amide compounds, phenolic compounds, trifluorinated boron complex compounds such as BF3- monoethanolamine, imidazoles such as 2-ethyl-4-methylimidazole, hydrazides such as aminodihydrazide, guanidines such as tetramethylguanidine, and dicyandiamide.
- the curing agent can be a single curing agent or a mixture of different curing agents. From the perspective of viscosity, an acid anhydride compound is particularly suitable.
- non-aromatic acid anhydride compound it is possible to use a non-aromatic acid anhydride compound.
- 3-methylhexahydrophthalic acid anhydride 4-methylhexahydrophthalic acid anhydride, l-methylnorbornane-2,3-dicarboxylic acid anhydride, 5-methylnorbornane-2,3-dicarboxyiic acid anhydride or norbornane-2,3-dicarboxylic acid anhydride, which do not have a double bond in the compound.
- a mixture of 4-methylhexahydrophthalic acid anhydride and hexahydrophthalic acid anhydride (such as Rikacid MH-700 produced by New Japan Chemical Co., Ltd.
- Bisphenol A bisphenol F, bisphenol S, 4,4'-biphenylphenol, tetramethyl bisphenol A, dimethyl bisphenol A, tetramethyl bisphenol F, dimethyl bisphenol F, tetramethyl bisphenol S, dimethyl bisphenol S, tetramethyl-4,4'-biphenol, dimethyl-4,4'-biphenylphenol, l-(4- hydroxyphenyl)-2-[4- ⁇ l ,l-bis-(4-hydroxyphenyl)ethyl ⁇ phenyl]propane, 2,2'-methylene-bis(4- methyl-6-tert-butylphenol), 4,4'-butylidene-bis(3-methyl-6-tert-butylphenol),
- Aliphatic amines such as diethylenetriamine, triethylenetetramine or
- aromatic amines such as diaminodiphenylmethane
- diaminodiphenylsulfone, meta-xylenediamine and condensation products of aromatic amines and aldehydes, polyamidoamines and the like can be used as amino-based curing agents.
- an amount of the curing agent is particularly approximately equal to the quantity of the epoxy resin.
- the quantity of the curing agent is from 5 to 15 percent by mass relative to total weight of the encapsulating resin composition.
- Inorganic particles are dispersed substantially homogeneously in the encapsulating resin composition of the present invention.
- the inorganic particles are used in order to impart the encapsulating resin composition with a high modulus of elasticity and a low thermal expansion coefficient, and it is possible to use a single type or a combination of two or more types of inorganic particles.
- these inorganic particles can be a powder such as silica (molten silica, crystalline silica), alumina, calcium silicate, calcium carbonate, potassium titanate, silicon carbide, silicon nitride, aluminum nitride, boron nitride, beryllia, zirconia, zircon, fosterite, steatite, spinel, mullite or titania, or beads, glass fibers and the like obtained by conglobating these powders. It is possible to use a single type or a combination of two or more types of these inorganic particles.
- molten silica is particularly suitable from the perspective of thermal expansion properties and crystalline silica and alumina are particularly suitable from the perspective of having high thermal conductivity.
- silica particles when producing silica particles as inorganic particles from an organic sol, because the particle size distribution thereof is narrow, it is possible to effectively distribute the particles in the resin composition.
- the shape of the primary particles of the inorganic particles is not particularly important, but spherical particles are particularly suitable from the perspective of being able to flow and penetrate into fine gaps.
- the inorganic particles are particularly suitable for the inorganic particles to have a small average particle diameter and a narrow particle size distribution. Because the inorganic particles are prone to stacking when the encapsulating resin composition is forced into a narrow gap, the inorganic particles used in the present invention have an average particle diameter of 10 um or less. In addition, the average particle diameter of the inorganic particles is particularly 5 um or less, more particularly 3 ⁇ or less, and even more particularly 2 ⁇ or less.
- the lower limit of the average particle diameter of the inorganic particles is not particularly restricted, but from the perspective of flowability, 0.5 ⁇ or higher is preferred in the case of silica particles, and 0.1 ⁇ or higher is preferred in the case of alumina particles.
- the particle diameter of the inorganic particles in the encapsulating resin composition is preferably within the range "average particle diameter ⁇ (average particle diameter x 0.3)" (for example, 1 ⁇ 0.3 ⁇ ).
- the average particle diameter and particle size distribution of the inorganic particles can be measured with an electron microscope or a laser scattering device.
- the inorganic particles may be surface treated to an extent that does not impair the dispersibility of the particles in the resin composition.
- Silica particles prepared by the sol-gel method and having a narrow particle size distribution are preferred as the inorganic particles, and molten silica having an average particle diameter of from 0.8 to 1.8 ⁇ , prepared by the sol-gel method and having a narrow particle size distribution (average particle diameter ⁇ (average particle diameter x 0.3)) are more preferred.
- Such inorganic particles are commercially available as, for example, Silica HPS- 1000 (produced by Toagosei Co., Ltd. by the sol-gel method) or Silica SS-07, SS-10 and SS-14 (produced by Tokuyama Corporation by the sol-gel method).
- An amount of inorganic particles in the encapsulating resin composition is preferably 60 percent by mass or more relative to the total quantity of the encapsulating resin composition from the perspective of the thermal expansion coefficient of the cured product, and is particularly 90 percent by mass or less relative to the total quantity of the encapsulating resin composition from the perspective of the viscosity of the resin composition. If the amount of inorganic particles falls within this range, it is generally possible to obtain a cured product having a thermal expansion coefficient of 35 ppm or less and also possible for the encapsulating resin composition of the present invention to be used as an encapsulating resin composition for a semiconductor.
- Organic titanium compounds able to be used in the encapsulating resin composition of the present invention include organic titanium compounds having a hydrolyzable group and a hydrophobic group in the compound. Such organic titanium compounds are generally known as titanium coupling agents.
- the organic titanium compound reacts with -OH groups on the surface of the inorganic particles and, for example, forms covalent bonds with the titanium by eliminating an alcohol by hydrolysis. It is thought that this makes the surface of the inorganic particles organic, which results in good dispersibility of the inorganic particles in the epoxy resin.
- R 1 can be a substituted or unsubstituted, straight chain or branched chain alkyl group, alkenyl group, aryl group or aralkyl group. Because R 1 is eliminated after the reaction with the inorganic particles (i.e., eliminated by forming an alcohol), it is particularly suitable for Rl to be a group having a somewhat lower boiling point following elimination. Therefore, R 1 is particularly a group having few carbon atoms, and preferably a substituted or unsubstituted, straight chain or branched chain alkyl group having 1 to 10 carbon atoms (and more particularly 1 to 8 carbon atoms).
- hydrophobic group in the organic titanium compound can be any hydrophobic group in the organic titanium compound.
- R 2 can be a substituted or unsubstituted, straight chain or branched chain alkyl group, alkenyl group, aryl group or aralkyl group.
- R 2 is particularly a group having many carbon atoms, and particularly a substituted or unsubstituted, straight chain or branched chain alkyl group having from 8 to 30 carbon atoms.
- R is a substituted or unsubstituted, straight chain or branched chain alkyl group having from 8 to 30 carbon atoms, and preferably 10 to 30 carbon atoms.
- the titanium coupling agent can be a tetraalkoxy titanium (such as tetraethoxy titanium, tetraisopropoxy titanium or tetrabutoxy titanium), tetra(ethylene glycol) titanate, di-n-butylbis(triethanolamine) titanate, di-isopropoxy bis(acetyl acetonate)titanium, isopropoxy titanium octanoate, isopropyl titanium trimethacrylate, isopropyl titanium triacrylate, isopropyl triisostearoyl titanate, isopropyl tridecylbenzenesulfonyl titanate, isopropyl (butyl, methylpyrophosphate) titanate, tetraisopropyl di(dilauryl phosphite) titanate,
- pyrophosphate)oxyacetate titanate tris(dioctyl pyrophosphate)ethylene titanate, isopropyl tri-n-dodecylbenzenesulfonyl titanate, isopropyl trioctanoyl titanate, isopropyl dimethacryloyl isostearoyl titanate, isopropyl isostearoyl diacrylic titanate, isopropyl tri(dioctyl phosphate) titanate, isopropyl tricumylphenyl titanate, isopropyl tri(N-aminoethyl-aminoethyl) titanate and the like.
- KRTTS isopropyltriisostearoyl titanate (CH 3 )2CHOTi[OCO(CH 2 )i4CH(CH 3 )2]3)
- R 46B tetraoctylbis(di-tridecylphosphite) titanate
- KR 55 tetra(2,2-diallyloxymethyl- l- butyl) bis(di-tridecyl) phosphite titanate
- KR 41B tetraisopropylbis(dioctylphosphite) titanate
- KR 38S isopropyltris(dioctylpyrophosphate) titanate
- KR 138S isopropyltris(dioctylpyrophosphate) titanate
- an amount of the organic titanium compound is 1 percent by mass or more, particularly 2 percent by mass or more, and more particularly 2.5 percent by mass or more, relative to the total quantity of the encapsulating resin composition.
- the quantity of the organic titanium compound is 5 percent by mass or less, particularly 4 percent by mass or less, and more particularly 3 percent by mass or less, relative to the total quantity of the encapsulating resin composition.
- phosphoric acid esters able to be used in the encapsulating resin composition of the present invention include esters obtained by subjecting phosphoric acid and an alcohol to dehydrocondensation.
- the phosphoric acid ester forms weak bonds, such as coordinate bonds, with the titanium.
- the organic layer on the surface of the inorganic particles, which is rendered organic by the organic titanium compound increases in depth.
- the phosphoric acid ester has a structure in which all or some of the hydrogen atoms in the phosphoric acid (OP(OH)3) are replaced by organic groups.
- Compounds in which 1 , 2 and 3 hydrogen atoms are replaced are known as a phosphoric acid monoester ((HO) 2 POZ) , a phosphoric acid diester (HOP(OZ) 2 ) and a phosphoric acid triester (P(OZ)3) respectively.
- Z denotes a substituted or unsubstituted alkyl group, phenyl group, polyester or polycaprolactone having from 10 to 50 carbon atoms and the like.
- Z From the perspective of increasing the thickness of the organic layer formed on the surface of the inorganic particles, it is preferable for Z to have a high molecular weight. Specifically, a weight average molecular weight of from 200 to 20,000 is suitable and a weight average molecular weight of from 300 to 10,000 is particularly suitable.
- dimethyl phosphate, diethyl phosphate, dipropyl phosphate, monobutyl phosphate, dibutyl phosphate, mono-2-ethylhexyl phosphate, di-2-ethylhexyl phosphate, monophenyl phosphate, mono-2-ethylhexyl phosphite, dioctyl phosphate, diphenyl phosphate and the like can be used as the compound mentioned above.
- commercially available products such as Disperbyk 1 1 1 produced by BYK Chemicals Japan can be obtained.
- phosphoric acid diesters are particularly suitable, and phosphoric acid diesters in which Z is a polycaprolactone are more particularly suitable, from the perspective of dispersion of the inorganic particles.
- an amount of the phosphoric acid ester is 0.5 percent by mass or more, particularly 1 percent by mass or more, and more particularly 1.2 percent by mass or more, relative to the total quantity of the encapsulating resin composition.
- the quantity of the phosphoric acid ester is 3 percent by mass or less, particularly 2 percent by mass or less, and more particularly 1.8 percent by mass or less, relative to the total quantity of the encapsulating resin composition.
- an organic titanium compound having a chemical structure represented by R 3 OTi(OCOR 4 H) 3 or (R 3 0) 4 Ti[HOP(OR 4 ) 2 ] (here, R 3 denotes a straight chain or branched chain alkyl group having from 3 to 8 carbon atoms and R 4 denotes a straight chain or branched chain alkyl group having from 10 to 20 carbon atoms.) and a phosphoric acid diester having a weight average molecular weight of from 200 to 20,000 and having a chemical structure represented by HOP(OZ) 2 (here, Z denotes a substituted or unsubstituted alkyl group, phenyl group, polyester or polycaprolactone having from 10 to 50 carbon atoms) is particularly
- the encapsulating resin composition of the present invention may also contain a reaction accelerator.
- the reaction accelerator used to accelerate the reaction between the epoxy resin and the curing agent can be a commonly used and publicly known reaction accelerator such as a cycloamidine compound, a tertiary amine, a quaternary ammonium salt, an imidazole, an organic metal compound that acts as a Lewis acid, a phosphorus-based compound such as an organic phosphine such as triphenyl phosphine, or a derivative or tetraphenyl boron salt thereof.
- a single reaction accelerator or a combination of two or more types thereof can be used.
- the quantity of the reaction accelerator is not particularly limited as long as a reaction acceleration effect is achieved.
- an ion trapping agent in the encapsulating resin composition of the present invention in order to improve the moisture resistance and high temperature exposure characteristics of a semiconductor device.
- the ion trapping agent is not particularly limited, and a publicly known ion trapping agent may be used. Specifically, it is possible to use hydrotalcite or a water-containing oxide of an element such as magnesium, aluminum, titanium, zirconium or bismuth.
- stress relaxing agents such as silicone rubber powders, dyes, colorants such as carbon black, leveling agents, anti-foaming agents and other inorganic fillers (for example, inorganic fillers having a flame retardant effect, such as aluminum hydroxide, magnesium hydroxide, zinc silicate or zinc molybdate) may be blended in the encapsulating resin composition of the present invention at levels that do not impair the object of the present invention.
- inorganic fillers having a flame retardant effect such as aluminum hydroxide, magnesium hydroxide, zinc silicate or zinc molybdate
- nitrogen-containing compounds such as cyanuric acid derivatives or isocyanuric acid derivatives
- phosphorus- and nitrogen-containing compounds such as cyclophosphazene
- metal compounds such as zinc oxide, iron oxide, molybdenum oxide and ferrocene
- antimony oxides such as antimony trioxide, antimony tetraoxide and antimony pentoxid
- a cured product of the encapsulating resin composition of the present invention has a thermal expansion coefficient of from 10 to 35 ppm. Because silicon has a low thermal expansion coefficient, it is preferable for a material used to seal silicon to also have a low thermal expansion coefficient when encapsulating a semiconductor. If the thermal expansion coefficient exceeds 35 ppm, there are concerns over cracks occurring due to thermal stress. Moreover, it is possible to use a TMA (Thermal Mechanical Analyzer) to measure the thermal expansion coefficient. Specifically, it is possible to measure the thermal expansion coefficient with a TMA 8310 thermomechanical analysis apparatus manufactured by Rigaku Corporation. A sample (size: 4 x 5 > ⁇ 10 mm 3 ) is heated at a rate of 20°C/minute in a nitrogen stream, a load of 10 mN is applied and measurements are carried out in compression mode.
- TMA Thermal Mechanical Analyzer
- the encapsulating resin composition of the present invention has good flowability.
- a viscosimeter can be used to measure the flowability, but it is sometimes not possible to determine whether or not the composition has actually penetrated into a narrow gap from viscosity values alone. Therefore, the most direct method is to measure the time taken for the resin composition to penetrate into a pair of plane parallel plates separated by a fixed gap. When measuring the penetration of this type of resin composition, two glass plates of different sizes are used.
- a large glass plate measuring 40 ⁇ 40 ⁇ 1 mm 3 and a small glass plate measuring 30 30 ⁇ 1 mm 3 are prepared, adhesive tape having a thickness of 40 ⁇ and dimensions of 30 5 mm 2 is applied to two of the edges of the small glass plate, and the large glass plate is applied thereto so as to form a gap of 40 ⁇ between the glass plates.
- the glass plates With the large glass plate on the bottom, the glass plates are placed on a hot plate adjusted to a temperature of 100°C, a resin is supplied to one edge of the small glass plate and the relationship between elapsed time and penetration distance of the resin is measured, thereby confirming the flowability of the encapsulating resin composition.
- the present invention it is possible to adjust the measured time required for penetration of the encapsulating resin composition within the range of from 10 to 1 ,000 seconds by using this measurement method. If the penetration time is 10 seconds or shorter, the viscosity of the resin composition is too low, meaning that it is easy for air bubbles to enter, and if the penetration time is 1 ,000 seconds or longer, workability is poor when actually using the resin composition as an encapsulating material.
- a cured product of the encapsulating resin composition of the present invention has a glass transition temperature (Tg) of from 60 to 120°C and modulus of elasticity (dynamic storage modulus; E') of from 5 to 40 GPa.
- Tg glass transition temperature
- E' modulus of elasticity
- the glass transition temperature and modulus of elasticity can be measured using a DMA (dynamic mechanical analysis) apparatus.
- the method of measurement involves the use of a solid analyzer (RSA-III) manufactured by Rheometric Scientific in a three point curve mode (strain: 0.05%, frequency: 1 Hz) and a sample (size: 2 10 ⁇ 35 mm 3 ) heated at a rate of 3°C/minute.
- RSA-III solid analyzer manufactured by Rheometric Scientific in a three point curve mode (strain: 0.05%, frequency: 1 Hz) and a sample (size: 2 10 ⁇ 35 mm 3 ) heated at a rate of 3°C/minute.
- the three point curve method to measure the modulus of elasticity (dynamic storage modulus) by placing the above-mentioned cuboid sample (size: 2 ⁇ 10 x 35 mm 3 ) on two knife edges (separated by 25 mm) and measuring the load used to push down on the central part of the sample, thereby deforming the sample.
- the strain is applied as a sine wave having a maximum value of 0.05%, and the load is also measured as a sine wave (the frequency of the sine wave is 1 Hz).
- the encapsulating resin composition of the present invention may be produced using any type of production method.
- a common production method is to blend the specified amounts of the raw materials either together or separately, stir, dissolve, mix and disperse these components in a mixing roller, extruder, planetary mixer and the like while, if necessary, heating and cooling, and then to cool and, if necessary, defoam and crush the resulting mixture.
- the encapsulating resin composition of the present invention can have a low viscosity even though inorganic particles having a low average particle diameter are filled at a high density. Therefore, the encapsulating resin composition of the present invention is excellent in terms of thermal expansion coefficient and flowability and can penetrate easily into a narrow gap.
- the encapsulating resin composition of the present invention can be used in a variety of applications, and can be used in any type of common electronic component application.
- the encapsulating resin composition of the present invention can be used in capacitors, resistors, semiconductor devices, integrated circuits, transistors, diodes, triodes, thyristers, coils, varistors, connectors, convenors, microswitches and composite parts obtained therefrom.
- the encapsulating resin composition of the present _ invention can be preferably used to seal a semiconductor device.
- the semiconductor device can be, for example, a flip chip mounted semiconductor device obtained by mounting an active element such as a semiconductor chip, a transistor, a diode or a thyristor or a passive element such as a capacitor, a resistor or a coil on a support member or a mounting board such as a wired tape carrier, a circuit board or a glass board and then encapsulating with an epoxy resin molding material for encapsulating.
- the encapsulating resin composition of the present invention is particularly suitable as a resin composition for underfilling (an underfill encapsulation material).
- a resin composition for underfilling an underfill encapsulation material
- the viscosity at 25°C is preferably 5,000 centipoise or lower, and more preferably from 500 to 3,000 centipoise, from the perspectives of workability and the properties of the obtained cured product.
- the encapsulating method when using the encapsulating resin composition of the present invention is not particularly limited, and can be low pressure transfer molding, injection molding, compression molding and so on.
- a dispensing method it is possible to use a casting method, a printing method and so on. From the perspective of filling properties, it is preferable to use a molding method that allows for molding under low pressure conditions.
- the encapsulating resin composition of the present invention has a low viscosity, it is possible to use a method other than injecting from a narrow gap.
- the encapsulating resin composition of the present invention has a low viscosity, and can therefore be effectively used in a method in which the resin composition is coated on a wafer using a variety of printing methods and this coated resin composition is then bonded while in a semi- cured state.
- a semiconductor device obtained by encapsulating an element with the encapsulating resin composition obtained in the present invention can be, for example, a BGA or CSP (Chip Size Package) obtained by mounting an element on the surface of an organic or inorganic substrate having circuit board connection terminals formed on the rear surface thereof, connecting a circuit formed on an organic substrate to the element by bump joining or wire bonding, and then encapsulating the element with the encapsulating resin composition of the present invention.
- BGA or CSP Chip Size Package
- a flip chip mounted semiconductor device by aligning the surface of an element on which a circuit is formed face-to- face with the surface on which a circuit is formed of an organic or inorganic substrate to which the element is to be connected, electrically connecting the electrodes of the element to the circuit on the substrate via bumps, and then impregnating the gap between the element and the substrate with the encapsulating resin composition of the present invention.
- This type of semiconductor device can be formed by connecting bump electrodes on a semiconductor chip to electrodes on the surface of a substrate, filling the above-mentioned encapsulating resin composition in the gap formed between the semiconductor chip and the substrate, and then curing the encapsulating resin composition so as to seal the above-mentioned gap.
- the encapsulating resin composition of the present invention it is possible to use the encapsulating resin composition of the present invention on a wafer obtained by forming a bump on an electrode on a silicon wafer or on a wafer having bumps on both surfaces having through silicon vias.
- the encapsulating resin composition of the present invention it is possible to form the encapsulating resin composition on the wafer using the various printing methods mentioned above and then leave the wafer to stand for from 5 to 120 minutes at from 10 to 120°C so as to obtain a B stage (semi-cured state).
- SFP-30M Si0 2 filler (average particle diameter: 0.7 um, maximum particle diameter: 10 ⁇ , minimum particle diameter: 0.2 ⁇ , produced by Denki Kagaku Kogyo Kabushiki Kaisha)
- HPS- 1000 Si0 2 filler (average particle diameter: 1 um, maximum particle diameter: 1.2 ⁇ , minimum particle diameter: 0.8 um, produced by Toagosei Co., Ltd.)
- Tg measurements by the DMA method involved the use of a solid analyzer (RSA-III) manufactured by Rheometric Scientific in a three point curve mode (strain: 0.05%, frequency: 1 Hz). The size of the samples was 2 * 10 ⁇ 35 mm 3 , and the samples were heated at a rate of 3°C/minute.
- Specific modulus of elasticity measurements used the three point curve method and involved placing the above-mentioned cuboid sample (size: 2 ⁇ 10 x 35 mm 3 ) on two knife edges (separated by 25 mm) and measuring the load used to push down on the central part of the sample, thereby deforming the sample.
- the strain was applied as a sine wave having a maximum value of 0.05%, and the load was also measured as a sine wave (the frequency of the sine wave was 1 Hz).
- thermal expansion coefficient was measured using a TMA 8310 thermomechanical analysis apparatus manufactured by Rigaku Corporation.
- the sample was heated at a rate of 20°C/minute in a nitrogen stream.
- the measurements were carried out in compression mode, and a load of 10 mN was applied during the measurements.
- the sample size was 4 x 5 x 10 mm 3 .
- the measurement results are shown in Table 4.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Sealing Material Composition (AREA)
- Epoxy Resins (AREA)
Abstract
The present invention provides an encapsulating resin composition that is excellent in terms of thermal expansion coefficient and flowability and that can easily penetrate into a narrow gap. The encapsulating resin composition includes an epoxy resin, a curing agent, inorganic particles, an organic titanium compound and a phosphoric acid ester. The average particle diameter of the inorganic particles is about 10 μm or less. The amount of inorganic particles relative to a total amount of the composition is about 60 percent by mass or more. The amount of organic titanium compound relative to the total quantity of the composition is about 1 percent by mass or more and about 5 percent by mass or less. The amount of phosphoric acid ester relative to the total quantity of the composition is about 0.5 percent by mass or more and about 3 percent by mass or less.
Description
ENCAPSULATING RESIN COMPOSITION
Field of Invention
The present invention relates to an encapsulating resin composition and also to a semiconductor device encapsulated using the encapsulating resin composition.
Background
Heretofore encapsulation with resins such as epoxy resins has been carried out in the fields of encapsulation of semiconductor devices and the like. In recent years, smaller and thinner packages have been developed due to the densification of semiconductor devices.
Therefore, distances (gaps) between chips and substrates in semiconductors have been reduced and are expected to be further reduced in the future. As a result, encapsulation materials that can be used in narrower gaps are required.
U.S. Patent Application Publication No. 2005/0129956 describes an underfill composition comprising at least one epoxy resin in combination with at least one epoxy hardener, the at least one epoxy hardener comprising at least one difunctional siloxane anhydride.
PCT International Publication No. WO/2005/080502 describes a liquid epoxy resin composition for use in underfilling that contains an epoxy resin, a curing agent, a curing accelerator, an inorganic filler and a coupling agent, wherein the coupling agent has two or more structures represented by -Si(OR)„H3.n (n = 1 to 3) in the molecule, and the content of the coupling agent in the resin composition is 0.05 to 1.5 wt.%.
Japanese Unexamined Patent Application Publication No. 2004-256646 describes a resin composition for underfilling, which contains an epoxy resin, a curing agent, a curing accelerator and an inorganic filler, wherein the content of a polyfunctional epoxy resin is from 5 to 20 percent by mass relative to the total quantity of epoxy resin, a phenolic compound and an acid anhydride are used as the curing agent, and the content of the phenolic compound relative to the total quantity of curing agent is from 3 to 20 percent by mass. Summary of the Invention
For reasons of thermal expansion properties, encapsulating resin compositions are generally highly filled with inorganic particles. In addition to the high filling of these inorganic particles, from the perspective of the flowability of the obtained resin composition, inorganic particles having a relatively large average particle diameter (from 15 to 30 μηι) are used in encapsulating resin compositions in order to lower a viscosity of the composition. However, if a
distance (gap) between a chip and a substrate in a semiconductor is reduced, in cases where the viscosity of an encapsulating resin composition is reduced through the use of inorganic particles having this sort of relatively large average particle diameter, a phenomenon can occur whereby the penetration of the encapsulating resin composition into the gap is inhibited due to the inorganic particles blocking the gap. Therefore, there is a need for an encapsulating resin composition that is excellent in terms of thermal expansion coefficient and flowability even if the average particle diameter of the inorganic particles is small and that can easily penetrate into a narrow gap.
In one embodiment, the present invention is an encapsulating resin composition containing an epoxy resin, a curing agent, inorganic particles, an organic titanium compound and a phosphoric acid ester. The average particle diameter of the inorganic particles is about 10 μπι or less. The amount of inorganic particles relative to a total amount of the encapsulating resin composition is about 60 percent by mass or more. The amount of organic titanium compound relative to the total quantity of the encapsulating resin composition is about 1 percent by mass or more and about 5 percent by mass or less. The amount of phosphoric acid ester relative to the total quantity of the encapsulating resin composition is about 0.5 percent by mass or more and about 3 percent by mass or less.
According to the present invention, an encapsulating resin composition is provided that is excellent in terms of thermal expansion coefficient and flowability and that can easily penetrate into a narrow gap.
Detailed Description of the Invention
Epoxy resins that can be used in the encapsulating resin composition of the present invention include aliphatic, alicyclic, aromatic or heterocyclic monomeric or oligomeric epoxy compounds. These materials generally have, on average, at least one polymerizable epoxy group per molecule, and may have at least 1.5 or at least 2 polymerizable epoxy groups per molecule. In certain modes, it is possible to use a polyfunctional epoxy compound having three or four polymerizable epoxy groups per molecule. The epoxy compound may be a pure compound or may be a mixture of compounds containing one, two, or more epoxy groups per molecule.
The epoxy compounds mentioned above may have any type of main chain and may contain substituent groups. Examples of allowable substituent groups include, but are not limited to: halogens, ester groups, ethers, sulfonate groups, siloxane groups, nitro groups,
phosphate groups and the like. The epoxy equivalent value of the epoxy compound can generally be altered within a range of from 50 to 2,000.
Examples of oligomeric epoxy compounds include, but are not limited to: linear oligomers having terminal epoxy groups (i.e., a diglycidyl ether of a polyoxyalkylene glycol), oligomers having skeletal epoxy units (i.e., polybutadiene polyepoxide), and oligomers having pendant epoxy groups (i.e., a glycidyl methacrylate oligomer or co-oligomer).
In certain modes, it is possible to use a glycidyl ether monomer represented by the following formula.
Formula I
r OCH2 CH-CH2
In the formula, R is a radical having a valency of n, n being an integer between 1 and 6. R can be an aromatic group, an alicyclic group, an aliphatic group or a combination thereof. Typical epoxy compounds include glycidyl ethers of polyhydric phenols obtained by reacting a polyhydric phenol with an excess of a chlorohydrin such as epichlorohydrin (for example, 2,2-bis-(2,3-epoxypropoxyphenol)-propane). Specifically, it is possible to use an aromatic epoxy compound, an alicyclic epoxy compound, an aliphatic epoxy compound and the like.
Examples of the aromatic epoxy compounds include, but are not limited to: a diglycidyl ether of bisphenol A (bisphenol A type epoxy resin), a diglycidyl ether of bisphenol F
(bisphenol F type epoxy resin), a diglycidyl ether of 4,4'-dihydroxybiphenyl, oligomers of these diglycidyl ethers, polyglycidyl ethers of cresol novolac resins (cresol novolac type epoxy resins) and polyglycidyl ethers of phenol novolac resins (phenol novolac type epoxy resins).
Examples of the alicyclic epoxy compounds include, but are not limited to: compounds obtained by hydrogenating the aromatic epoxy compounds mentioned above, such as hydrogenated bisphenol A type epoxy compounds and hydrogenated bisphenol F type epoxy compounds. In addition, it is possible to use compounds containing a cyclohexene oxide group, such as vinyl cyclohexene monoxide, l ,2-epoxy-4-vinyl cyclohexane, l ,2:8,9-diepoxylimonene, and epoxy cyclohexane carboxylates such as 3,4-epoxycyclohexenylmethyl-3',4'- epoxycyclohexene carboxylate, 3,4-epoxycyclohexenylmethyI-3,4-epoxycyclohexane carboxylate, 3,4-epoxy-2-methylcyclohexylmethyl-3,4-epoxy-2-methylcyclohexane carboxylate and bis(3,4-epoxy-6-methylcyclohexylmethyl) adipate.
The aliphatic epoxy compounds include glycidyl ethers of aliphatic polyhydric alcohols or alkylene oxide adducts thereof. Examples include, but are not limited to: ethylene glycol
diglycidyl ether, di(ethylene glycol) diglycidyl ether, propylene glycol diglycidyl ether, tri(propylene glycol) diglycidyl ether, neopentyl glycol diglycidyl ether, 1 ,4-butane diol diglycidyl ether, 1,6-hexane diol diglycidyl ether, trimethylolpropane triglycidyl ether, trimethylolpropane diglycidyl ether, poly(ethylene glycol) diglycidyl ether and the like.
In addition to the epoxy resins mentioned above, it is possible to use a halogenated epoxy resin (such as a brominated bisphenol type epoxy resin) or an epoxy compound having a glycidylamino group. Epoxy compounds having a glycidylamino group are epoxy compounds (epoxy resins) obtained by epoxidation by reacting amines and an epihalohydrin, and examples thereof include aminophenol type epoxy resins, triglycidyl isocyanurates, tetraglycidyl diaminodiphenylmethane, tetraglycidyl meta-xylenediamine and hexaglycidyl triaminobenzene.
The aminophenol type epoxy resins are obtained by epoxidizing aminophenols using publicly known methods. Examples of the aminophenols include, but are not limited to:
aminophenols and aminocresols such as 2-aminophenol, 3-aminophenol, 4-aminophenol, 2- amino-m-cresol, 2-amino-p-cresol, 3-amino-o-cresol, 4-amino-m-cresol and 6-amino-m-cresol.
Other epoxy resins able to be used include, but are not limited to, copolymers of acrylic acid esters of glycidol (such as glycidyl acrylate and glycidyl methacrylate) with one or more copolymerizable vinyl compounds. This type of copolymer includes styrene-glycidyl methacrylate and methyl methacrylate-glycidyl acrylate copolymers. In addition, it is also possible to use an epoxy-functional silicon, which is a polydimethyl siloxane in which silicon atoms have been substituted with epoxyalkyl groups.
Of the epoxy resins mentioned above, it is particularly suitable to use a bisphenol A type epoxy resin, a bisphenol F type epoxy resin or an aminophenol type epoxy resin from the perspective of characteristics after curing the encapsulating resin composition. In addition, from the perspective of obtaining a balance between the viscosity of the encapsulating resin composition and the characteristics after curing, it is preferable to use both a bisphenol A type epoxy resin and a bisphenol F type epoxy resin or a three-component system obtained by further adding an aminophenol type epoxy resin to a bisphenol A type epoxy resin and a bisphenol F type epoxy resin. Specifically, it is possible to use the product ZX1059 (produced by Tohto Kasei Co., Ltd., a mixture of bisphenol A and bisphenol F) or the aminophenol type epoxy jER (registered trademark) 630 (produced by Mitsubishi Chemical Corporation), both of which are commercially available.
An amount of the epoxy resin is generally 20 percent by mass or less, and from 10 to 20 percent by mass in some embodiments, relative to a total amount of the encapsulating resin composition.
The curing agent contained in the encapsulating resin composition of the present invention can be a routine curing agent used to cure epoxy compounds. Specific examples thereof include, but are not limited to: amino compounds, acid anhydride compounds, amide compounds, phenolic compounds, trifluorinated boron complex compounds such as BF3- monoethanolamine, imidazoles such as 2-ethyl-4-methylimidazole, hydrazides such as aminodihydrazide, guanidines such as tetramethylguanidine, and dicyandiamide. The curing agent can be a single curing agent or a mixture of different curing agents. From the perspective of viscosity, an acid anhydride compound is particularly suitable.
It is possible to use a non-aromatic acid anhydride compound. For example, it is possible to use hexahydrophthalic acid anhydride, 3-methylhexahydrophthalic acid anhydride, 4-methylhexahydrophthalic acid anhydride, l-methylnorbornane-2,3-dicarboxylic acid anhydride, 5-methylnorbornane-2,3-dicarboxylic acid anhydride, norbornane-2,3-dicarboxylic acid anhydride, 1-methylnadic acid anhydride, 5-methylnadic acid anhydride, nadic acid anhydride, tetrahydrophthalic acid anhydride, 3-methyltetraahydrophthalic acid anhydride, 4-methyltetrahydiophthalic acid anhydride, dodecenylsuccinic acid anhydride and the like.
Of these, it is particularly suitable to use hexahydrophthalic acid anhydride,
3-methylhexahydrophthalic acid anhydride, 4-methylhexahydrophthalic acid anhydride, l-methylnorbornane-2,3-dicarboxylic acid anhydride, 5-methylnorbornane-2,3-dicarboxyiic acid anhydride or norbornane-2,3-dicarboxylic acid anhydride, which do not have a double bond in the compound. A mixture of 4-methylhexahydrophthalic acid anhydride and hexahydrophthalic acid anhydride (such as Rikacid MH-700 produced by New Japan Chemical Co., Ltd.
(4-methylhexahydrophthalic acid anhydride/hexahydrophthalic acid anhydride ratio = 70/30) is particularly suitable due to an encapsulating resin composition that contains this mixture having a low viscosity and not being prone to crystallization.
Bisphenol A, bisphenol F, bisphenol S, 4,4'-biphenylphenol, tetramethyl bisphenol A, dimethyl bisphenol A, tetramethyl bisphenol F, dimethyl bisphenol F, tetramethyl bisphenol S, dimethyl bisphenol S, tetramethyl-4,4'-biphenol, dimethyl-4,4'-biphenylphenol, l-(4- hydroxyphenyl)-2-[4-{ l ,l-bis-(4-hydroxyphenyl)ethyl}phenyl]propane, 2,2'-methylene-bis(4- methyl-6-tert-butylphenol), 4,4'-butylidene-bis(3-methyl-6-tert-butylphenol),
trishydroxyphenylmethane, resorcinol, hydroquinone, pyrogallol, diisopropylidene, phenols having a terpene skeleton, phenols having a fluorene skeleton such as l,l-di-4- hydroxyphenylfluorene, phenolated polybutadienes, phenol, cresols, ethylphenols, butylphenols, octylphenoJs, and novolac resins such as novolac resins obtained using phenols such as bisphenol A, bisphenol F, bisphenol S, naphthols, terpene diphenols and the like as raw
materials, phenol novolac resins having a xylylene skeleton, phenol novolac resins having a dicyclopentadiene skeleton, phenol novolac resins having a biphenyl skeleton, phenol novolac resins having a fluorene skeleton and phenol novolac resins having a furan skeleton can be used as phenol-based curing agents.
Aliphatic amines such as diethylenetriamine, triethylenetetramine or
tetraethylenepentamine, aromatic amines such as diaminodiphenylmethane,
diaminodiphenylsulfone, meta-xylenediamine and condensation products of aromatic amines and aldehydes, polyamidoamines and the like can be used as amino-based curing agents.
From the perspective of the characteristics of the obtained cured product, an amount of the curing agent is particularly approximately equal to the quantity of the epoxy resin. In general, the quantity of the curing agent is from 5 to 15 percent by mass relative to total weight of the encapsulating resin composition.
Inorganic particles are dispersed substantially homogeneously in the encapsulating resin composition of the present invention. The inorganic particles are used in order to impart the encapsulating resin composition with a high modulus of elasticity and a low thermal expansion coefficient, and it is possible to use a single type or a combination of two or more types of inorganic particles. In general, these inorganic particles can be a powder such as silica (molten silica, crystalline silica), alumina, calcium silicate, calcium carbonate, potassium titanate, silicon carbide, silicon nitride, aluminum nitride, boron nitride, beryllia, zirconia, zircon, fosterite, steatite, spinel, mullite or titania, or beads, glass fibers and the like obtained by conglobating these powders. It is possible to use a single type or a combination of two or more types of these inorganic particles.
Of the inorganic particles mentioned above, molten silica is particularly suitable from the perspective of thermal expansion properties and crystalline silica and alumina are particularly suitable from the perspective of having high thermal conductivity. In addition, when producing silica particles as inorganic particles from an organic sol, because the particle size distribution thereof is narrow, it is possible to effectively distribute the particles in the resin composition. Moreover, the shape of the primary particles of the inorganic particles is not particularly important, but spherical particles are particularly suitable from the perspective of being able to flow and penetrate into fine gaps.
In addition, from the perspective of the flowability of the encapsulating resin composition, it is particularly suitable for the inorganic particles to have a small average particle diameter and a narrow particle size distribution. Because the inorganic particles are prone to stacking when the encapsulating resin composition is forced into a narrow gap, the inorganic
particles used in the present invention have an average particle diameter of 10 um or less. In addition, the average particle diameter of the inorganic particles is particularly 5 um or less, more particularly 3 μπι or less, and even more particularly 2 μπι or less. However, the lower limit of the average particle diameter of the inorganic particles is not particularly restricted, but from the perspective of flowability, 0.5 μπι or higher is preferred in the case of silica particles, and 0.1 μπι or higher is preferred in the case of alumina particles. In addition, the particle diameter of the inorganic particles in the encapsulating resin composition is preferably within the range "average particle diameter ± (average particle diameter x 0.3)" (for example, 1 ± 0.3 μπι). The average particle diameter and particle size distribution of the inorganic particles can be measured with an electron microscope or a laser scattering device. Moreover, the inorganic particles may be surface treated to an extent that does not impair the dispersibility of the particles in the resin composition.
Silica particles prepared by the sol-gel method and having a narrow particle size distribution are preferred as the inorganic particles, and molten silica having an average particle diameter of from 0.8 to 1.8 μπι, prepared by the sol-gel method and having a narrow particle size distribution (average particle diameter ± (average particle diameter x 0.3)) are more preferred. Such inorganic particles are commercially available as, for example, Silica HPS- 1000 (produced by Toagosei Co., Ltd. by the sol-gel method) or Silica SS-07, SS-10 and SS-14 (produced by Tokuyama Corporation by the sol-gel method).
An amount of inorganic particles in the encapsulating resin composition is preferably 60 percent by mass or more relative to the total quantity of the encapsulating resin composition from the perspective of the thermal expansion coefficient of the cured product, and is particularly 90 percent by mass or less relative to the total quantity of the encapsulating resin composition from the perspective of the viscosity of the resin composition. If the amount of inorganic particles falls within this range, it is generally possible to obtain a cured product having a thermal expansion coefficient of 35 ppm or less and also possible for the encapsulating resin composition of the present invention to be used as an encapsulating resin composition for a semiconductor.
Organic titanium compounds able to be used in the encapsulating resin composition of the present invention include organic titanium compounds having a hydrolyzable group and a hydrophobic group in the compound. Such organic titanium compounds are generally known as titanium coupling agents. The organic titanium compound reacts with -OH groups on the surface of the inorganic particles and, for example, forms covalent bonds with the titanium by eliminating an alcohol by hydrolysis. It is thought that this makes the surface of the inorganic
particles organic, which results in good dispersibility of the inorganic particles in the epoxy resin.
The hydrolyzable group in the organic compound can be R'O-, -O-CH2-CH2-O- or -0-CH2-C(=0)-0- and the like. Here, R1 can be a substituted or unsubstituted, straight chain or branched chain alkyl group, alkenyl group, aryl group or aralkyl group. Because R1 is eliminated after the reaction with the inorganic particles (i.e., eliminated by forming an alcohol), it is particularly suitable for Rl to be a group having a somewhat lower boiling point following elimination. Therefore, R1 is particularly a group having few carbon atoms, and preferably a substituted or unsubstituted, straight chain or branched chain alkyl group having 1 to 10 carbon atoms (and more particularly 1 to 8 carbon atoms).
[0037]
In addition, the hydrophobic group in the organic titanium compound can be
-0-C(=0)-R2, -0-S(=0)2-Ph-R2, -0-P(=0)(-OH)-0-P(=0)-(OR2)2, -0-P(=0)-(OR2)2,
HO-P-(OR2)2, -0-(CH2)m-NH-(CH2)n-NH2 and the like. Here, Ph denotes a phenyl group, m and n are each an integer from 1 to 10, and R2 can be a substituted or unsubstituted, straight chain or branched chain alkyl group, alkenyl group, aryl group or aralkyl group. In order to improve the efficiency with which the surface of the inorganic particles is covered, R2 is particularly a group having many carbon atoms, and particularly a substituted or unsubstituted, straight chain or branched chain alkyl group having from 8 to 30 carbon atoms.
Of these, -0-C(=0)-R2, HO-P-(OR )2 and -0-(CH2)m-NH-(CH2)n-NH2 are particularly suitable hydrophobic groups from the perspectives of reactivity with the inorganic particles in the encapsulating resin composition and reduced viscosity of the encapsulating resin
composition. From the perspective of flowability, -0-C(=0)-R2 or HO-P-(OR2)2 is particularly suitable, and from the perspective of the stability of the titanium coupling agent, -0-C(=0)-R2 is particularly suitable. Here, R is a substituted or unsubstituted, straight chain or branched chain alkyl group having from 8 to 30 carbon atoms, and preferably 10 to 30 carbon atoms.
Specifically, the titanium coupling agent can be a tetraalkoxy titanium (such as tetraethoxy titanium, tetraisopropoxy titanium or tetrabutoxy titanium), tetra(ethylene glycol) titanate, di-n-butylbis(triethanolamine) titanate, di-isopropoxy bis(acetyl acetonate)titanium, isopropoxy titanium octanoate, isopropyl titanium trimethacrylate, isopropyl titanium triacrylate, isopropyl triisostearoyl titanate, isopropyl tridecylbenzenesulfonyl titanate, isopropyl (butyl, methylpyrophosphate) titanate, tetraisopropyl di(dilauryl phosphite) titanate,
dimethacryloxyacetate titanate, diacryloxyacetate titanate, di(dioctyl phosphite)ethylene titanate, isopropoxy titanium tri(dioctyl phosphate), isopropyl tris(dioctyl pyrophosphate) titanate,
tetraisopropyl bis(dioctyl phosphite) titanate, tetraoctyl bis(di-tridecyl phosphite) titanate, tetra(2,2-diallyloxymethyl-l -butyl) bis(di-tridecyl)phosphite titanate, bis(dioctyl
pyrophosphate)oxyacetate titanate, tris(dioctyl pyrophosphate)ethylene titanate, isopropyl tri-n-dodecylbenzenesulfonyl titanate, isopropyl trioctanoyl titanate, isopropyl dimethacryloyl isostearoyl titanate, isopropyl isostearoyl diacrylic titanate, isopropyl tri(dioctyl phosphate) titanate, isopropyl tricumylphenyl titanate, isopropyl tri(N-aminoethyl-aminoethyl) titanate and the like.
KRTTS (isopropyltriisostearoyl titanate (CH3)2CHOTi[OCO(CH2)i4CH(CH3)2]3),
R 46B (tetraoctylbis(di-tridecylphosphite) titanate), KR 55 (tetra(2,2-diallyloxymethyl- l- butyl) bis(di-tridecyl) phosphite titanate), KR 41B (tetraisopropylbis(dioctylphosphite) titanate), KR 38S (isopropyltris(dioctylpyrophosphate) titanate), KR 138S
(bis(dioctylpyrophosphate)oxyacetate titanate), KR 238S (tris(dioctylpyrophosphate)ethylene titanate), 338X (isopropyldioctylpyrophosphate titanate), KR 44 (isopropyltri(N- aminoethylaminoethyl) titanate) and KR 9SA (isopropyltris(dodecylbenzylphenyl) titanate and the like of the Plenact (registered trademark) series, which is sold by Ajinomoto Fine-Techno Co., Inc., can be used. Plenact KR TTS, KR 46B and KR 9SA are preferred, and Plenact KR TTS and KR 46B are particularly suitable.
From the perspective of reducing the viscosity of the encapsulating resin composition, an amount of the organic titanium compound is 1 percent by mass or more, particularly 2 percent by mass or more, and more particularly 2.5 percent by mass or more, relative to the total quantity of the encapsulating resin composition. However, from the perspectives of reduced glass transition temperature and modulus of elasticity of the obtained cured product, the quantity of the organic titanium compound is 5 percent by mass or less, particularly 4 percent by mass or less, and more particularly 3 percent by mass or less, relative to the total quantity of the encapsulating resin composition.
Among organic phosphoric acid compounds, phosphoric acid esters able to be used in the encapsulating resin composition of the present invention include esters obtained by subjecting phosphoric acid and an alcohol to dehydrocondensation. By further adding a phosphoric acid ester to the above-mentioned organic titanium compound, the phosphoric acid ester forms weak bonds, such as coordinate bonds, with the titanium. As a result, the organic layer on the surface of the inorganic particles, which is rendered organic by the organic titanium compound, increases in depth.
Specifically, the phosphoric acid ester has a structure in which all or some of the hydrogen atoms in the phosphoric acid (OP(OH)3) are replaced by organic groups. Compounds
in which 1 , 2 and 3 hydrogen atoms are replaced are known as a phosphoric acid monoester ((HO)2POZ) , a phosphoric acid diester (HOP(OZ)2) and a phosphoric acid triester (P(OZ)3) respectively. Here, Z denotes a substituted or unsubstituted alkyl group, phenyl group, polyester or polycaprolactone having from 10 to 50 carbon atoms and the like. From the perspective of increasing the thickness of the organic layer formed on the surface of the inorganic particles, it is preferable for Z to have a high molecular weight. Specifically, a weight average molecular weight of from 200 to 20,000 is suitable and a weight average molecular weight of from 300 to 10,000 is particularly suitable.
For example, dimethyl phosphate, diethyl phosphate, dipropyl phosphate, monobutyl phosphate, dibutyl phosphate, mono-2-ethylhexyl phosphate, di-2-ethylhexyl phosphate, monophenyl phosphate, mono-2-ethylhexyl phosphite, dioctyl phosphate, diphenyl phosphate and the like can be used as the compound mentioned above. Specifically, commercially available products such as Disperbyk 1 1 1 produced by BYK Chemicals Japan can be obtained.
Of the phosphoric acid esters mentioned above, phosphoric acid diesters are particularly suitable, and phosphoric acid diesters in which Z is a polycaprolactone are more particularly suitable, from the perspective of dispersion of the inorganic particles.
From the perspective of reducing the viscosity of the encapsulating resin composition, an amount of the phosphoric acid ester is 0.5 percent by mass or more, particularly 1 percent by mass or more, and more particularly 1.2 percent by mass or more, relative to the total quantity of the encapsulating resin composition. However, from the perspective of the possibility of causing a reduction in the electrical properties (insulating properties) of the obtained cured product, the quantity of the phosphoric acid ester is 3 percent by mass or less, particularly 2 percent by mass or less, and more particularly 1.8 percent by mass or less, relative to the total quantity of the encapsulating resin composition.
As mentioned above, by combining an organic titanium compound with a phosphoric acid ester, it is possible to improve the dispersibility of the inorganic particles in the epoxy resin and to improve the flowability of the obtained encapsulating resin composition. In particular, a combination of an organic titanium compound having a chemical structure represented by R3OTi(OCOR4H)3 or (R30)4Ti[HOP(OR4)2] (here, R3 denotes a straight chain or branched chain alkyl group having from 3 to 8 carbon atoms and R4 denotes a straight chain or branched chain alkyl group having from 10 to 20 carbon atoms.) and a phosphoric acid diester having a weight average molecular weight of from 200 to 20,000 and having a chemical structure represented by HOP(OZ)2 (here, Z denotes a substituted or unsubstituted alkyl group, phenyl group, polyester or polycaprolactone having from 10 to 50 carbon atoms) is particularly suitable.
In addition to the components mentioned above, the encapsulating resin composition of the present invention may also contain a reaction accelerator. Here, the reaction accelerator used to accelerate the reaction between the epoxy resin and the curing agent can be a commonly used and publicly known reaction accelerator such as a cycloamidine compound, a tertiary amine, a quaternary ammonium salt, an imidazole, an organic metal compound that acts as a Lewis acid, a phosphorus-based compound such as an organic phosphine such as triphenyl phosphine, or a derivative or tetraphenyl boron salt thereof. A single reaction accelerator or a combination of two or more types thereof can be used. Moreover, the quantity of the reaction accelerator is not particularly limited as long as a reaction acceleration effect is achieved.
In addition, it is possible to blend an ion trapping agent in the encapsulating resin composition of the present invention in order to improve the moisture resistance and high temperature exposure characteristics of a semiconductor device. The ion trapping agent is not particularly limited, and a publicly known ion trapping agent may be used. Specifically, it is possible to use hydrotalcite or a water-containing oxide of an element such as magnesium, aluminum, titanium, zirconium or bismuth.
Furthermore, stress relaxing agents such as silicone rubber powders, dyes, colorants such as carbon black, leveling agents, anti-foaming agents and other inorganic fillers (for example, inorganic fillers having a flame retardant effect, such as aluminum hydroxide, magnesium hydroxide, zinc silicate or zinc molybdate) may be blended in the encapsulating resin composition of the present invention at levels that do not impair the object of the present invention. In addition, red phosphorus, phosphoric acid esters, melamine, melamine derivatiyes, compounds having a triazine ring, nitrogen-containing compounds such as cyanuric acid derivatives or isocyanuric acid derivatives, phosphorus- and nitrogen-containing compounds such as cyclophosphazene, metal compounds such as zinc oxide, iron oxide, molybdenum oxide and ferrocene, antimony oxides such as antimony trioxide, antimony tetraoxide and antimony pentoxide, and flame retardants such as brominated epoxy resins may also be blended in the encapsulating resin composition of the present invention.
A cured product of the encapsulating resin composition of the present invention has a thermal expansion coefficient of from 10 to 35 ppm. Because silicon has a low thermal expansion coefficient, it is preferable for a material used to seal silicon to also have a low thermal expansion coefficient when encapsulating a semiconductor. If the thermal expansion coefficient exceeds 35 ppm, there are concerns over cracks occurring due to thermal stress. Moreover, it is possible to use a TMA (Thermal Mechanical Analyzer) to measure the thermal expansion coefficient. Specifically, it is possible to measure the thermal expansion coefficient
with a TMA 8310 thermomechanical analysis apparatus manufactured by Rigaku Corporation. A sample (size: 4 x 5 >< 10 mm3) is heated at a rate of 20°C/minute in a nitrogen stream, a load of 10 mN is applied and measurements are carried out in compression mode.
In addition, the encapsulating resin composition of the present invention has good flowability. Here, a viscosimeter can be used to measure the flowability, but it is sometimes not possible to determine whether or not the composition has actually penetrated into a narrow gap from viscosity values alone. Therefore, the most direct method is to measure the time taken for the resin composition to penetrate into a pair of plane parallel plates separated by a fixed gap. When measuring the penetration of this type of resin composition, two glass plates of different sizes are used. For example, a large glass plate measuring 40 χ 40 χ 1 mm3 and a small glass plate measuring 30 30 χ 1 mm3 are prepared, adhesive tape having a thickness of 40 μπι and dimensions of 30 5 mm2 is applied to two of the edges of the small glass plate, and the large glass plate is applied thereto so as to form a gap of 40 μηι between the glass plates. With the large glass plate on the bottom, the glass plates are placed on a hot plate adjusted to a temperature of 100°C, a resin is supplied to one edge of the small glass plate and the relationship between elapsed time and penetration distance of the resin is measured, thereby confirming the flowability of the encapsulating resin composition. In the present invention, it is possible to adjust the measured time required for penetration of the encapsulating resin composition within the range of from 10 to 1 ,000 seconds by using this measurement method. If the penetration time is 10 seconds or shorter, the viscosity of the resin composition is too low, meaning that it is easy for air bubbles to enter, and if the penetration time is 1 ,000 seconds or longer, workability is poor when actually using the resin composition as an encapsulating material.
In addition, a cured product of the encapsulating resin composition of the present invention has a glass transition temperature (Tg) of from 60 to 120°C and modulus of elasticity (dynamic storage modulus; E') of from 5 to 40 GPa. Moreover, the glass transition temperature and modulus of elasticity can be measured using a DMA (dynamic mechanical analysis) apparatus. The method of measurement involves the use of a solid analyzer (RSA-III) manufactured by Rheometric Scientific in a three point curve mode (strain: 0.05%, frequency: 1 Hz) and a sample (size: 2 10 χ 35 mm3) heated at a rate of 3°C/minute.
Specifically, it is possible to use the three point curve method to measure the modulus of elasticity (dynamic storage modulus) by placing the above-mentioned cuboid sample (size: 2 χ 10 x 35 mm3) on two knife edges (separated by 25 mm) and measuring the load used to push down on the central part of the sample, thereby deforming the sample. In this case, the strain is
applied as a sine wave having a maximum value of 0.05%, and the load is also measured as a sine wave (the frequency of the sine wave is 1 Hz).
As long as the components mentioned above can be blended and dispersed uniformly, the encapsulating resin composition of the present invention may be produced using any type of production method. A common production method is to blend the specified amounts of the raw materials either together or separately, stir, dissolve, mix and disperse these components in a mixing roller, extruder, planetary mixer and the like while, if necessary, heating and cooling, and then to cool and, if necessary, defoam and crush the resulting mixture. Moreover, it is also possible firstly to prepare a mixture of all the components except the inorganic particles and then to add the inorganic particles to this mixture to obtain the encapsulating resin composition. In addition, it is also possible to form the encapsulating resin composition into tablets having dimensions and weights appropriate to the molding conditions if required.
As mentioned above, it is possible for the encapsulating resin composition of the present invention to have a low viscosity even though inorganic particles having a low average particle diameter are filled at a high density. Therefore, the encapsulating resin composition of the present invention is excellent in terms of thermal expansion coefficient and flowability and can penetrate easily into a narrow gap. The encapsulating resin composition of the present invention can be used in a variety of applications, and can be used in any type of common electronic component application. For example, the encapsulating resin composition of the present invention can be used in capacitors, resistors, semiconductor devices, integrated circuits, transistors, diodes, triodes, thyristers, coils, varistors, connectors, convenors, microswitches and composite parts obtained therefrom. The encapsulating resin composition of the present _ invention can be preferably used to seal a semiconductor device. The semiconductor device can be, for example, a flip chip mounted semiconductor device obtained by mounting an active element such as a semiconductor chip, a transistor, a diode or a thyristor or a passive element such as a capacitor, a resistor or a coil on a support member or a mounting board such as a wired tape carrier, a circuit board or a glass board and then encapsulating with an epoxy resin molding material for encapsulating.
The encapsulating resin composition of the present invention is particularly suitable as a resin composition for underfilling (an underfill encapsulation material). For example, it is possible to fill the encapsulating resin composition of the present invention in the gap between a polyimide substrate on which a copper circuit is formed and a semiconductor chip mounted on this substrate, and then cure by heating and drying to form a cured film of the encapsulating resin composition of the present invention in this gap. After forming this cured film of the
encapsulating resin composition, the surface of the copper circuit is protected by applying a coverlay. When using the encapsulating resin composition of the present invention as a underfill encapsulation material, the viscosity at 25°C is preferably 5,000 centipoise or lower, and more preferably from 500 to 3,000 centipoise, from the perspectives of workability and the properties of the obtained cured product.
The encapsulating method when using the encapsulating resin composition of the present invention is not particularly limited, and can be low pressure transfer molding, injection molding, compression molding and so on. In addition, it is possible to use a dispensing method, a casting method, a printing method and so on. From the perspective of filling properties, it is preferable to use a molding method that allows for molding under low pressure conditions. Moreover, because the encapsulating resin composition of the present invention has a low viscosity, it is possible to use a method other than injecting from a narrow gap. Specifically, it is possible to apply the resin composition to a substrate using a variety of methods, such as spin coating, stencil coating, jet dispensing, screen printing and pad coating. By crimping an adherend on a printed resin, it is possible to obtain a structure embedded between a substrate and the adherend.
As the pitch and height of semiconductor bumps has decreased in recent years, there has been a tendency for the gap between the semiconductor and the substrate following bump joining to become smaller, and an encapsulating resin composition which is able to penetrate into narrow gaps, such as that of the present invention, is therefore suitable. In addition, the encapsulating resin composition of the present invention has a low viscosity, and can therefore be effectively used in a method in which the resin composition is coated on a wafer using a variety of printing methods and this coated resin composition is then bonded while in a semi- cured state.
A semiconductor device obtained by encapsulating an element with the encapsulating resin composition obtained in the present invention can be, for example, a BGA or CSP (Chip Size Package) obtained by mounting an element on the surface of an organic or inorganic substrate having circuit board connection terminals formed on the rear surface thereof, connecting a circuit formed on an organic substrate to the element by bump joining or wire bonding, and then encapsulating the element with the encapsulating resin composition of the present invention. More specifically, it is possible to obtain, for example, a flip chip mounted semiconductor device by aligning the surface of an element on which a circuit is formed face-to- face with the surface on which a circuit is formed of an organic or inorganic substrate to which the element is to be connected, electrically connecting the electrodes of the element to the circuit
on the substrate via bumps, and then impregnating the gap between the element and the substrate with the encapsulating resin composition of the present invention. This type of semiconductor device can be formed by connecting bump electrodes on a semiconductor chip to electrodes on the surface of a substrate, filling the above-mentioned encapsulating resin composition in the gap formed between the semiconductor chip and the substrate, and then curing the encapsulating resin composition so as to seal the above-mentioned gap. In addition, it is possible to use the encapsulating resin composition of the present invention on a wafer obtained by forming a bump on an electrode on a silicon wafer or on a wafer having bumps on both surfaces having through silicon vias. When using the encapsulating resin composition of the present invention on a wafer, it is possible to form the encapsulating resin composition on the wafer using the various printing methods mentioned above and then leave the wafer to stand for from 5 to 120 minutes at from 10 to 120°C so as to obtain a B stage (semi-cured state).
Examples
Preparation of encapsulating resin compositions
Component used
The components used to prepare the encapsulating resin compositions are shown in
Table 1.
Table 1
DisperByk-1 1 1 Phosphoric acid ester (Mw=940) (product name DisperByk-1 1 1 , produced by BYK Chemicals Japan)
HOPOrO{(CH2)4COO}m{(CH2)s COO}„{(CH2)20}aCH3l2
DisperByk-145 Phosphoric acid ester (Mw=1700) (product name DisperByk- 145, produced by BYK Chemicals Japan) HOPO(OR)(OR)' (R and R' are both polyester chains)
TXP Trixylylene phosphate (Mw=410) (product name TXP, phosphoric acid ester, produced by Daihachi Chemical Industry Co., Ltd.)
SFP-30M Si02 filler (average particle diameter: 0.7 um, maximum particle diameter: 10 μπι, minimum particle diameter: 0.2 μπι, produced by Denki Kagaku Kogyo Kabushiki Kaisha)
HPS- 1000 Si02 filler (average particle diameter: 1 um, maximum particle diameter: 1.2 μπι, minimum particle diameter: 0.8 um, produced by Toagosei Co., Ltd.)
SS-10 Si02 filler (average particle diameter: 1 um, maximum particle diameter: 2 μπι, minimum particle diameter: 0.5 μηι, produced by Tokuyama Coφόration)
AA-3 A12C>3 filler (average particle diameter: 3 μπι, minimum particle diameter: 2.7 μπι, produced by Sumitomo Chemical Co., Ltd.)
Working examples 1-1 1 and comparative examples 1-4
(Preparation of encapsulating resin compositions)
In accordance with the compositions shown in Table 2, the components were added to a planetary mixer (Thinky Model AR250) and blended by stirring at 3000 rpm at room temperature so as to produce the encapsulating resin compositions of Working Examples 1-1 1 and Comparative Examples 1 -4.
Table 2
(Units: percent by mass)
Evaluation of the encapsulating resin compositions
Flowabiiitv (penetration time")
The time required for the encapsulating resin compositions obtained above to penetrate between glass plates (upper plate 30 mm χ 30 mm, lower plate 40 mm χ 40 mm) separated by a gap of 40 μπι was measured. The glass plates were placed on a hot plate at a temperature of 100°C and the encapsulating resin composition was applied to the edge of the upper plate. The time required for the encapsulating resin composition to penetrate 10 mm from the edge of the upper plate was measured, and the measurement results are shown in Table 3.
Measurement of Tg, modulus of elasticity and thermal expansion coefficient
A sample obtained by curing the encapsulating resin composition of Working Example 1 for 2 hours at 150°C and samples obtained by curing the encapsulating resin compositions of working examples 2 and 10 for 2 hours at 165°C were prepared and measured for glass transition temperature. (Tg), modulus of elasticity (dynamic storage modulus; E') (DMA method) and thermal expansion coefficient (CTE). The Tg measurements by the DMA method involved the use of a solid analyzer (RSA-III) manufactured by Rheometric Scientific in a three point curve mode (strain: 0.05%, frequency: 1 Hz). The size of the samples was 2 * 10 χ 35 mm3, and the samples were heated at a rate of 3°C/minute. Specific modulus of elasticity measurements used the three point curve method and involved placing the above-mentioned cuboid sample (size: 2 χ 10 x 35 mm3) on two knife edges (separated by 25 mm) and measuring the load used to push down on the central part of the sample, thereby deforming the sample. In this case, the strain was applied as a sine wave having a maximum value of 0.05%, and the load was also measured as a sine wave (the frequency of the sine wave was 1 Hz).
In addition, the thermal expansion coefficient was measured using a TMA 8310 thermomechanical analysis apparatus manufactured by Rigaku Corporation. The sample was heated at a rate of 20°C/minute in a nitrogen stream. The measurements were carried out in compression mode, and a load of 10 mN was applied during the measurements. The sample size was 4 x 5 x 10 mm3. The measurement results are shown in Table 4.
Table 4
Claims
1. An encapsulating resin composition comprising:
an epoxy resin;
a curing agent;
inorganic particles;
an organic titanium compound; and
a phosphoric acid ester;
wherein an average particle diameter of the inorganic particles is about 10 μιη or less, wherein an amount of the inorganic particles relative to a total amount of the
encapsulating resin composition is about 60 percent by mass or more, wherein an amount of the organic titanium compound relative to the total quantity of the encapsulating resin composition is about 1 percent by mass or more and about 5 percent by mass or less, and
wherein an amount of the phosphoric acid ester relative to the total quantity of the
encapsulating resin composition is about 0.5 percent by mass or more and about 3 percent by mass or less.
2. The encapsulating resin composition according to claim 1, wherein the average particle diameter of the inorganic particles is about 5 um or less.
3. The encapsulating resin composition according to claim 1 or claim 2, wherein the encapsulating resin composition is an underfill encapsulation material.
4. A semiconductor device encapsulated with the encapsulating resin composition according to any one of claims 1 to 3.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-174946 | 2010-08-04 | ||
JP2010174946A JP2012036240A (en) | 2010-08-04 | 2010-08-04 | Encapsulating resin composition |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012018684A1 true WO2012018684A1 (en) | 2012-02-09 |
Family
ID=44545903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2011/045894 WO2012018684A1 (en) | 2010-08-04 | 2011-07-29 | Encapsulating resin composition |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2012036240A (en) |
TW (1) | TW201211145A (en) |
WO (1) | WO2012018684A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10072195B2 (en) | 2014-03-14 | 2018-09-11 | Dainichiseika Color & Chemicals Mfg. Co., Ltd. | Thermally conductive complex oxide, production method therefor, thermally conductive complex oxide-containing composition, and use therefor |
US10079360B2 (en) | 2014-12-08 | 2018-09-18 | Furukawa Electric Co., Ltd. | Resin composition for sealing electronic devices, and electronic device |
CN117343455A (en) * | 2023-12-06 | 2024-01-05 | 广州市晶邦密封技术有限公司 | High-rebound-resilience polytetrafluoroethylene composite material and preparation method thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6051557B2 (en) * | 2012-03-26 | 2016-12-27 | 日立化成株式会社 | Epoxy resin liquid sealing material for underfill and electronic component device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004256646A (en) | 2003-02-25 | 2004-09-16 | Matsushita Electric Works Ltd | Resin composition for underfilling, and semiconductor device |
US20050129956A1 (en) | 2003-12-16 | 2005-06-16 | Slawomir Rubinsztajn | Novel underfill material having enhanced adhesion |
WO2005080502A1 (en) | 2004-02-24 | 2005-09-01 | Matsushita Electric Works, Ltd. | Liquid epoxy resin composition for underfill and semiconductor device encapsulated with the composition |
US20060214153A1 (en) * | 2003-04-07 | 2006-09-28 | Ryoichi Ikezawa | Epoxy resin molding material for sealing use and semiconductor device |
US20080234409A1 (en) * | 2004-03-03 | 2008-09-25 | Hitachi Chemical Co., Ltd. | Sealant Epoxy-Resin Molding Material, and Electronic Component Device |
-
2010
- 2010-08-04 JP JP2010174946A patent/JP2012036240A/en active Pending
-
2011
- 2011-07-29 WO PCT/US2011/045894 patent/WO2012018684A1/en active Application Filing
- 2011-08-03 TW TW100127641A patent/TW201211145A/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004256646A (en) | 2003-02-25 | 2004-09-16 | Matsushita Electric Works Ltd | Resin composition for underfilling, and semiconductor device |
US20060214153A1 (en) * | 2003-04-07 | 2006-09-28 | Ryoichi Ikezawa | Epoxy resin molding material for sealing use and semiconductor device |
US20050129956A1 (en) | 2003-12-16 | 2005-06-16 | Slawomir Rubinsztajn | Novel underfill material having enhanced adhesion |
WO2005080502A1 (en) | 2004-02-24 | 2005-09-01 | Matsushita Electric Works, Ltd. | Liquid epoxy resin composition for underfill and semiconductor device encapsulated with the composition |
US20080234409A1 (en) * | 2004-03-03 | 2008-09-25 | Hitachi Chemical Co., Ltd. | Sealant Epoxy-Resin Molding Material, and Electronic Component Device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10072195B2 (en) | 2014-03-14 | 2018-09-11 | Dainichiseika Color & Chemicals Mfg. Co., Ltd. | Thermally conductive complex oxide, production method therefor, thermally conductive complex oxide-containing composition, and use therefor |
US10079360B2 (en) | 2014-12-08 | 2018-09-18 | Furukawa Electric Co., Ltd. | Resin composition for sealing electronic devices, and electronic device |
CN117343455A (en) * | 2023-12-06 | 2024-01-05 | 广州市晶邦密封技术有限公司 | High-rebound-resilience polytetrafluoroethylene composite material and preparation method thereof |
CN117343455B (en) * | 2023-12-06 | 2024-04-26 | 广州市晶邦密封技术有限公司 | High-rebound-resilience polytetrafluoroethylene composite material and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
JP2012036240A (en) | 2012-02-23 |
TW201211145A (en) | 2012-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5354753B2 (en) | Underfill material and semiconductor device | |
US9773714B2 (en) | Semiconductor package resin composition and usage method thereof | |
JP4892164B2 (en) | Liquid epoxy resin composition and electronic component device | |
JP6233441B2 (en) | Liquid epoxy resin composition and electronic component device | |
JP2015193851A (en) | Liquid epoxy resin composition and electronic part device | |
WO2012018684A1 (en) | Encapsulating resin composition | |
JP4176619B2 (en) | Flip chip mounting side fill material and semiconductor device | |
US6372839B1 (en) | Flip-chip type semiconductor device underfill | |
KR20190133564A (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same | |
JP2009057575A (en) | Liquid epoxy resin composition and electronic component device | |
JP3925803B2 (en) | Flip chip mounting side fill material and semiconductor device | |
JP2018039992A (en) | Resin composition and three-dimensional laminated type semiconductor device using the resin composition | |
JP6657716B2 (en) | Liquid composition for sealing, sealing material, and electronic component device | |
JP7167912B2 (en) | Liquid encapsulating resin composition, electronic component device, and method for manufacturing electronic component device | |
JP5614022B2 (en) | Epoxy resin composition, semiconductor sealing resin composition, and semiconductor device | |
JP5708666B2 (en) | Liquid epoxy resin composition and electronic component device | |
JP2016040393A (en) | Liquid epoxy resin composition, and electronic component device | |
JP2015180760A (en) | Liquid epoxy resin composition and electronic part device | |
JP2015110803A (en) | Liquid epoxy resin composition and electronic part device | |
JP6388228B2 (en) | Liquid epoxy resin composition for semiconductor encapsulation and semiconductor device using the same | |
JP5924443B2 (en) | Liquid epoxy resin composition and electronic component device | |
JP5929977B2 (en) | Liquid epoxy resin composition and electronic component device | |
WO2022019184A1 (en) | Electronic device manufacturing method and electronic device | |
JP5804479B2 (en) | Manufacturing method of resin-encapsulated semiconductor device and resin-encapsulated semiconductor device | |
KR20090055397A (en) | Underfill hybrid epoxy compositions having improved moisture resistance and fluidity |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11751982 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11751982 Country of ref document: EP Kind code of ref document: A1 |