WO2012008439A1 - Procédé et système de traitement de substrats - Google Patents

Procédé et système de traitement de substrats Download PDF

Info

Publication number
WO2012008439A1
WO2012008439A1 PCT/JP2011/065868 JP2011065868W WO2012008439A1 WO 2012008439 A1 WO2012008439 A1 WO 2012008439A1 JP 2011065868 W JP2011065868 W JP 2011065868W WO 2012008439 A1 WO2012008439 A1 WO 2012008439A1
Authority
WO
WIPO (PCT)
Prior art keywords
load lock
lock chamber
substrate
processed
purge gas
Prior art date
Application number
PCT/JP2011/065868
Other languages
English (en)
Japanese (ja)
Inventor
延幸 中筋
彰一 村上
俊彦 中瀬
Original Assignee
住友精密工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友精密工業株式会社 filed Critical 住友精密工業株式会社
Priority to JP2012524554A priority Critical patent/JPWO2012008439A1/ja
Priority to KR1020127031947A priority patent/KR20130016359A/ko
Publication of WO2012008439A1 publication Critical patent/WO2012008439A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/6773—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers

Definitions

  • the present invention relates to a substrate processing method and a substrate processing system for processing a substrate to be processed under reduced pressure, and more particularly, to a substrate processing method and a substrate processing system for waiting for a substrate to be processed in a load lock chamber under reduced pressure.
  • the substrate processing system includes a load lock chamber in which a cassette is stored, a processing chamber for processing a substrate to be processed, a transfer chamber connected to the load lock chamber and the processing chamber, and an exhaust gas in the load lock chamber.
  • a load lock chamber decompressing means for decompressing the load lock chamber a purge gas supplying means for supplying a purge gas into the load lock chamber, a transport chamber decompressing means for exhausting a gas in the transport chamber to decompress the transport chamber, and a processing And a processing chamber decompression means for exhausting the gas in the chamber and decompressing the processing chamber.
  • the cassette stores a plurality of flat substrates to be processed, and the plurality of substrates to be processed are stored in a stacked manner at predetermined intervals in the vertical direction.
  • the purge gas supply means is configured such that a supply position for supplying purge gas into the load lock chamber is set at an upper position of the cassette, and the load lock chamber decompression means has an exhaust position for exhausting gas from the load lock chamber.
  • the cassette is placed between the supply position and the exhaust position.
  • the processing chamber is depressurized by the processing chamber depressurizing means, and the transfer chamber is depressurized by the transfer chamber depressurizing means, so that the processing chamber and the transfer chamber are brought into substantially the same depressurized state. Is done.
  • a cassette storing a plurality of substrates to be processed is stored in the load lock chamber under atmospheric pressure, and the load lock chamber is depressurized by the load lock chamber decompression means.
  • the cassette placed between the supply position and the exhaust position is exposed to a purge gas flow from the supply position toward the exhaust position.
  • the substrate to be processed in the cassette is taken out by the transfer mechanism and introduced into the processing chamber. Then, a predetermined process is performed on the substrate to be processed in the processing chamber, and the processed substrate after processing is taken out by the transport mechanism and stored again in the cassette in the load lock chamber.
  • the load lock chamber is brought to atmospheric pressure, the processed cassette and the unprocessed cassette are exchanged, and the processing is performed in the same manner thereafter.
  • a purge gas is supplied to the load lock chamber, and the cassette is exposed to the purge gas flow, thereby preventing the organic matter from entering the cassette by the purge gas flow and removing the organic matter from the purge gas. At the same time, it is discharged to the outside of the room, and these actions prevent organic substances from adhering to the substrate to be processed.
  • the purge gas is always supplied to the load lock chamber and the gas is exhausted from the load lock chamber while the substrate to be processed is stored in the load lock chamber and in the standby state. Therefore, there is room for further improvement from the viewpoint of reducing manufacturing costs such as reducing the amount of purge gas used and reducing power consumption.
  • the mean free path of organic matter can be shortened by supplying a large amount of purge gas into the load lock chamber and maintaining the pressure in the load lock chamber high.
  • the amount of purge gas used is increased, there is a problem in that the manufacturing cost increases.
  • the present invention has been made in view of the above circumstances, and in preventing organic contamination of the substrate to be processed, it is possible to reduce the manufacturing cost, and to further prevent organic contamination of the substrate to be processed in the load lock chamber. It is an object of the present invention to provide a substrate processing method and a substrate processing system that can be completely prevented.
  • the present invention for solving the above problems is as follows.
  • the substrate to be processed in the load lock chamber is taken out by the transport mechanism in the transport chamber in the decompressed state connected to the load lock chamber, and transported to the processing chamber in the decompressed state connected to the transport chamber.
  • the present invention is A load lock chamber in which a substrate to be processed is stored; A processing chamber for processing the substrate to be processed; A transfer chamber connected to the load lock chamber and the processing chamber; A transfer mechanism provided in the transfer chamber, taking out the substrate to be processed in the load lock chamber and introducing it into the process chamber; and taking out the substrate to be processed in the process chamber and storing it in the load lock chamber; A load-lock chamber decompression means for exhausting the gas in the load-lock chamber to decompress the load-lock chamber; Purge gas supply means for supplying purge gas into the load lock chamber; Pressure detecting means for detecting the pressure in the load lock chamber; Control means for controlling the operation of the load lock chamber pressure reducing means and purge gas supply means; A transport chamber decompression means for exhausting the gas in the transport chamber to decompress the transport chamber; A processing chamber decompression means for exhausting the gas in the processing chamber to decompress the processing chamber; In the purge gas supply means, a supply position for supplying the purge gas into the load lock chamber
  • an exhaust position for exhausting gas from the load lock chamber is set at a position below the substrate to be processed,
  • the control means includes While the substrate to be processed is stored in the load lock chamber, While the purge gas is supplied into the load lock chamber by the purge gas supply means, the load lock chamber pressure reducing means exhausts the load lock chamber to depressurize the load lock chamber, and the load detection chamber detects the load lock.
  • the purge gas supply means stops the supply of the purge gas, and at the same time or later, the load lock chamber pressure reducing means exhausts the exhaust from the load lock chamber.
  • the processing chamber is depressurized by the processing chamber depressurizing means, and the conveying chamber is depressurized by the conveying chamber depressurizing means, so that the processing chamber and the conveying chamber are brought into substantially the same depressurized state.
  • the substrate to be processed is stored in the load lock chamber under atmospheric pressure.
  • the substrate to be processed is placed between the supply position and the exhaust position.
  • the following processing is performed under the control of the control means while the substrate to be processed is in a standby state in the load lock chamber.
  • the gas in the load lock chamber is exhausted from the exhaust position set at the lower position by the load lock chamber decompression means, while the gas is loaded by the purge gas supply means from the supply position set at the upper position of the substrate to be processed.
  • Purge gas is supplied into the lock chamber, and the load lock chamber is decompressed while the purge gas is supplied.
  • the purge gas can be exemplified by N 2 gas, but is not limited thereto.
  • organic substances may exist in the load lock chamber under reduced pressure, but the organic substances adhere to the substrate to be processed by exposing the substrate to be processed to the purge gas flow as in the conventional case. Is prevented.
  • the exhaust from the load lock chamber by the load lock chamber decompression means is resumed.
  • the supply of the purge gas into the load lock chamber by the purge gas supply means is resumed.
  • the first reference pressure is preferably set in the range of 10 Pa to 30 Pa, and the second reference pressure is in the range of 15 Pa to 300 Pa. It is preferable to set within.
  • the substrate to be processed that is in the standby state in the load lock chamber is appropriately taken out of the load lock chamber by the transfer mechanism and introduced into the processing chamber, and predetermined processing is performed in the processing chamber. After that, it is returned to the load lock chamber again by the transport mechanism.
  • the purge gas supply and the exhaust in the load lock chamber are stopped within a range that can effectively prevent organic contamination of the substrate to be processed, thus reducing the purge gas consumption and power consumption. As a result, the manufacturing cost can be reduced.
  • the purge gas supply means includes a supply pipe having one end connected to the supply position of the load lock chamber, a purge opening / closing valve interposed in the supply pipe, and the other end of the supply pipe
  • the load lock chamber pressure reducing means is connected to the exhaust pipe, one end of which is connected to the exhaust position of the load lock chamber, and the exhaust gas interposed in the exhaust pipe.
  • the purge gas is supplied to the exhaust pipe and circulated toward the downstream side, so that the organic matter flows backward from the exhaust pump.
  • the organic matter can be prevented from entering the load lock chamber. It can prevent more effectively.
  • the supply amount (flow rate) of the purge gas supplied to the exhaust pipe during the stop may be much smaller than the supply amount supplied to the load lock chamber. In this sense, the amount of purge gas used can be reduced compared to the conventional case. it can.
  • a plurality of the substrates to be processed are stored in a cassette at a predetermined interval in the vertical direction, and the stored cassette is placed between the supply position and the exhaust position in the load lock chamber. You may make it do.
  • the cassette includes a cover body that is disposed above the uppermost substrate to be processed among the stored substrates to be processed and covers at least the entire upper surface of the uppermost substrate to be processed. Is preferred.
  • the uppermost substrate to be processed is more easily contaminated by organic matter than the substrate to be processed therebelow.
  • contact with the organic substance is prevented by the cover body, and the organic substance can be prevented from adhering.
  • the said cover body in this invention may be the same shape as a to-be-processed substrate, In this case, it can be accommodated in a cassette similarly to a to-be-processed substrate, The said cover body is the highest-order to-be-processed. It is stored in the cassette so as to be positioned above the substrate.
  • the cover body may constitute a top plate of the cassette.
  • the cover body is configured to cover at least the entire upper surface of the uppermost substrate to be stored.
  • the purge gas supply and the exhaust in the load lock chamber are stopped within a range in which organic contamination of the substrate to be processed can be effectively prevented. Electricity can be saved, and as a result, the manufacturing cost can be reduced.
  • the contamination by organic substance can be prevented and it accommodated in the cassette.
  • the substrate processing system 1 of this example includes a transfer chamber 40 having a square planar shape, a transfer mechanism 45 disposed in the transfer chamber 40, and the transfer chamber 40.
  • a transfer chamber decompression mechanism 41 for reducing pressure a load lock chamber 10 connected to one of four outer peripheral surfaces of the transfer chamber 40 via a gate valve 11, and a gate on each of the other three outer peripheral surfaces.
  • Processing chambers 50, 60, 70 connected through valves 51, 61, 71, a load lock chamber decompression mechanism 25 for decompressing the inside of the load lock chamber 10, and a purge gas for supplying purge gas into the load lock chamber 10
  • the supply mechanism 30, the load lock chamber controller 15 for controlling the operation of the load lock chamber pressure reducing mechanism 25, the purge gas supply mechanism 30, and the like, and the processing chamber pressure reducing mechanism 5 for reducing the pressure in the processing chambers 50, 60, 70, respectively. , Consisting of 62, 72 Metropolitan.
  • the transfer chamber 40, the transfer mechanism 45, the transfer chamber decompression mechanism 41, the gate valves 11, 51, 61, 71, the process chambers 50, 60, 70, the process chamber decompression mechanisms 52, 62, 72, and the like are not shown.
  • the operation is controlled by the control unit.
  • a mounting table 20 for mounting the cassette 80 is provided in the load lock chamber 10.
  • the mounting table 20 is supported by an upper end portion of an elevating rod 22 that passes through the bottom surface of the load lock chamber 10 and is arranged in a vertical direction, and is moved by an elevating drive unit 21 connected to the lower end portion of the elevating rod 22. Moves up and down in the vertical direction.
  • the penetrating portion that is penetrated by the lift rod 22 of the load lock chamber 10 is appropriately sealed by a sealing member, and the lift rod 22 in the load lock chamber 10 has an upper end at the bottom surface of the mounting table 20 described above.
  • the lower end is covered with a cylindrical bellows 23 fixed to the bottom surface of the load lock chamber 10.
  • An exhaust hole 12 is formed in the bottom surface of the load lock chamber 10, the load lock chamber pressure reducing mechanism 25 is connected to the exhaust hole 12, and an air supply hole 13 is formed in the wall surface of the load lock chamber 10.
  • the purge gas supply mechanism 30 is connected to the air supply hole 13.
  • the air supply hole 13 is located above the cassette 80 on the mounting table 20, and the cassette 80 is located in the middle connecting the air supply hole 13 and the exhaust hole 12.
  • the cassette 80 has a structure in which a plurality of holding grooves 81 for holding the substrate to be processed K are provided in the vertical direction at predetermined intervals.
  • the substrate to be processed K is inserted into each holding groove 81, and the cover body 90 having the same shape as the substrate to be processed K is inserted into the uppermost holding groove 81.
  • the substrate to be processed K and the cover body 90 are taken in and out from the opening side 82 of the cassette 80.
  • the load lock chamber decompression mechanism 25 includes an exhaust pump 26, an exhaust pipe 27 having one end connected to the exhaust pump 26, and the other end connected to the exhaust hole 12, and an exhaust disposed in an intermediate portion of the exhaust pipe 27.
  • the exhaust pump 26 exhausts the gas in the load lock chamber 10 through the exhaust hole 12 and the exhaust pipe 27, and the pressure is reduced.
  • the purge gas supply mechanism 30 includes a purge gas supply unit 31, a supply pipe 32, a diffuser 33, a vent opening / closing valve 34, a purge opening / closing valve 35, and a flow rate adjusting unit 36, as shown in the figure.
  • One end of the supply pipe 32 is connected to the purge gas supply part 31, and the other end is connected to the air supply hole 13 of the load lock chamber 10, and the intermediate part branches into two branch pipes 32a and 32b. ing.
  • the vent opening / closing valve 34 is provided in one branch pipe 32a, and the purge opening / closing valve 35 and the flow rate adjusting unit 36 are provided in the other branch pipe 32b.
  • the diffuser 33 is a cup-like member fixed to the inner wall surface so as to close the air supply hole 13 opened on the inner wall surface of the load lock chamber 10, and a large number of through holes are formed in the plane. Has been.
  • the purge gas is supplied from the purge gas supply unit 31 to the supply pipe 32, and the purge gas flows into the load lock chamber 10 through the supply hole 13 and the through hole of the diffuser 33.
  • vent opening / closing valve 34 is opened and the purge opening / closing valve 35 is closed, a large amount of purge gas is supplied into the load lock chamber 10 through the vent opening / closing valve 34, and the inside of the load lock chamber 10 is large. Pressure. Note that the vent opening / closing valve 34 is closed after the inside of the load lock chamber 10 reaches atmospheric pressure.
  • the purge gas having a flow rate adjusted by the flow rate adjusting unit 36 is supplied into the load lock chamber 10 through the purge opening / closing valve 35.
  • the transfer chamber decompression mechanism 41 includes an exhaust pump 42, an exhaust pipe 43 having one end connected to the exhaust pump 42, and the other end connected to the transfer chamber 40, and an open / close disposed in an intermediate portion of the exhaust pipe 43.
  • the opening / closing valve 44 When the opening / closing valve 44 is in an open state, the gas in the transfer chamber 40 is exhausted through the exhaust pipe 43 by the exhaust pump 42, and the pressure is reduced to a predetermined pressure.
  • the transport mechanism 45 is supported by the support base 46 such that the axis is in the vertical direction, a support shaft 47 that is finely moved up and down in the vertical direction, and a horizontal surface that is horizontally supported by the support shaft 47.
  • the arm 48 extends and contracts inside, and a pickup hand 49 provided at the tip of the arm 48.
  • the processing chambers 50, 60, and 70 are processing chambers for processing the substrate to be processed K, and a detailed description thereof is omitted. For example, HF gas, alcohol (ethanol, methanol, etc.) are omitted. ) Various processes such as etching the SiO 2 film on the substrate to be processed K with a mixed gas of vapor and N 2 gas are performed.
  • the load lock chamber 10 is provided with a pressure detector 17 for detecting the pressure inside the load lock chamber 10, and a detection signal related to the pressure detected by the pressure detector 17 is sent to the load lock chamber control unit 15. It is supposed to be sent.
  • each processing chamber 50 is processed by the processing chamber decompression mechanism 52, 62, 72 under the control of the other control unit (not shown) described above.
  • 60 and 70 are depressurized, and the inside of the transfer chamber 40 is depressurized by the transfer chamber pressure reducing mechanism 41, and the inside of the processing chambers 50, 60 and 70 and the inside of the transfer chamber 40 are brought to substantially the same reduced pressure (vacuum) state. .
  • the transfer chamber 40, the transfer mechanism 45, the transfer chamber decompression mechanism 41, the gate valves 11, 51, 61, 71, the process chambers 50, 60, 70, the process chamber decompression mechanisms 52, 62, 72 The operation is executed under the control of the other control unit (not shown).
  • a plurality of substrates to be processed K are stored in the cassette 80, and a cover body 90 having the same shape is stored above the uppermost substrate to be processed K.
  • the entire upper surface of the substrate to be processed K is covered with the cover body 90.
  • the cassette 80 is placed on the mounting table 20 in the load lock chamber 10 such that the opening side 82 faces the transfer chamber 40.
  • the transport mechanism 45 rotates the support shaft 47 about the shaft center so that the pickup hand 49 faces the load lock chamber 10.
  • the gate valve 11 is opened, and the transport mechanism 45 extends the arm 48 and causes the pickup hand 49 to enter the load lock chamber 10 through the gate valve 11.
  • the position of the mounting table 20 is adjusted by the elevating mechanism 21 so that the position of the pickup hand 49 is slightly below the substrate K to be taken out in the vertical direction.
  • the hand 49 is inserted below the substrate K to be processed.
  • the transport mechanism 45 slightly raises the support shaft 47 to receive the substrate to be processed K on the pickup hand 49, and then contracts the arm 48 to remove the substrate to be processed K from the cassette 80. At the same time, it is removed from the load lock chamber 10. Thereafter, the gate valve 11 is closed.
  • the transport mechanism 45 introduces the substrate K to be processed thus taken out into a predetermined, for example, processing chamber 50. Although a specific description of the introduction operation is omitted, after that, in the processing chamber 50, a scheduled process is performed on the substrate.
  • the processing chambers 50, 60, and 70 may perform the same processing or different processing.
  • the processing chambers 50, 60, and 70 are sequentially passed through the substrate K to be processed. Thus, a series of processes may be performed on the target substrate K.
  • the transfer mechanism 45 takes out the substrate to be processed K from the processing chambers 50, 60, and 70 and stores it again in the cassette 80 in the load lock chamber 10. .
  • the purge gas supply mechanism 30 closes the purge open / close valve 35 and opens the vent open / close valve 34 to provide a large quantity.
  • the purge gas is supplied into the load lock chamber 10 to bring the load lock chamber 10 to atmospheric pressure.
  • the load lock chamber pressure reducing mechanism 25 closes the exhaust opening / closing valve 28.
  • the timing for closing the exhaust opening / closing valve 28 may be the same as the opening operation of the vent opening / closing valve 34 or may be before the opening operation.
  • the processed cassette 80 and the unprocessed cassette 80 are exchanged, and the processing is performed in the same manner thereafter.
  • the load lock chamber control unit 15 performs the following operation.
  • the load lock chamber control unit 15 monitors the pressure in the load lock chamber 10 detected by the pressure detector 17, and closes the purge opening / closing valve 35 when this pressure reaches a predetermined first reference pressure. Then, the supply of the purge gas to the load lock chamber 10 is stopped, and at the same time or later, the exhaust opening / closing valve 28 is closed to stop the exhaust from the load lock chamber 10. At this time, the exhaust pump 26 and the purge gas supply unit 31 may either stop their operation or continue the driven state.
  • the load lock chamber control unit 15 Opens the exhaust opening / closing valve 28 (if the exhaust pump 26 is stopped, the exhaust pump 26 is also driven) to restart the exhaust from the load lock chamber 10 and at the same time for purging
  • the opening / closing valve 35 is opened (when the operation of the purge gas supply unit 31 is stopped, it is operated), and the supply of the purge gas to the load lock chamber 10 is resumed.
  • the load lock chamber 10 has the inside. Since the purge gas supply mechanism 30 supplies the purge gas into the load lock chamber 10 while the substrate to be processed K is waiting, the cassette 80 in which the substrate K to be processed is exposed is exposed to the purge gas flow. The purge gas flow prevents the organic matter from entering the cassette. Further, the organic substance is discharged out of the load lock chamber 10 together with the purge gas, and these actions prevent the organic substance from adhering to the substrate K to be processed.
  • the exhaust from the load lock chamber 10 and the purge gas into the load lock chamber 10 are discharged.
  • the supply is stopped and the pressure in the load lock chamber 10 becomes the second reference pressure, the exhaust and supply are resumed. This is because the load lock chamber 10 is supplied with purge gas while the load gas is supplied.
  • the inside of the lock chamber 10 is depressurized to a predetermined pressure, even if the supply and exhaust of the purge gas are stopped thereafter, the action of preventing the organic matter from adhering to the substrate K to be processed is maintained, and the organic matter on the substrate K to be processed is maintained. This is based on the knowledge of the present inventors that the adhesion of water is within an allowable range.
  • the purge gas flow is indispensable for preventing the organic matter from adhering to the substrate K to be processed.
  • supply and load of the purge gas It has been found that the above action is maintained even when the exhaust from the lock chamber 10 is stopped.
  • the operation is continued because the purge gas remains in the load lock chamber 10 even when the supply of the purge gas and the exhaust from the load lock chamber 10 are stopped, thereby reducing the mean free path of the organic matter. It seems to be because it is suppressed.
  • the first reference pressure is preferably set within a range of 10 Pa to 30 Pa.
  • the second reference pressure is preferably set within a range of 15 Pa to 300 Pa.
  • the upper surface of the substrate to be processed K positioned in the uppermost layer among the substrates to be processed K stored in the cassette 80 is covered by the cover body 90 disposed above the substrate. Therefore, this cover body 90 prevents contact with organic matter, and it is possible to prevent the organic matter from adhering to the uppermost substrate to be processed K as well.
  • the substrate processing system 1 can effectively prevent the organic matter from adhering to the substrate K to be processed even in such a case.
  • the first reference pressure is set to 10 Pa
  • the second reference pressure is set to 15 Pa
  • the uppermost substrate K in the cassette 80 is covered with the cover body 90 in the load lock state. It is stored in the chamber 10, and a process of etching the SiO 2 film on the substrate K to be processed with a mixed gas of HF gas, ethanol vapor and N 2 gas is performed, and the first substrate K to be processed (the lowest level in the cassette 80).
  • the etching rate and the uniformity of etching of the substrate to be processed K) and the substrate to be processed K (the uppermost substrate to be processed K in the cassette 80) kept in the load lock chamber 10 for 14 hours are compared. Both were equivalent.
  • Example 3 On the other hand, the same processing as in Experimental Example 2 was performed without protecting the uppermost substrate to be processed K by the cover body 90, and the uppermost substrate K and the uppermost substrate that had been kept in the load lock chamber 10 for 14 hours. Comparing the etching rate and etching uniformity with the substrate to be processed K, the etching substrate has the etching rate of about 10% slower than that of the first substrate to be processed K, and the etching uniformity is 50%. % Worse.
  • the set pressure in the load lock chamber 10 at the time of depressurization is a considerably low pressure
  • one end is connected to the supply pipe 32 b upstream from the purge opening / closing valve 35, and the exhaust pipe downstream from the exhaust opening / closing valve 28.
  • a pipe 38 having the other end connected to the pipe 27 may be provided, and a supply opening / closing valve 39 may be interposed in the pipe 38.
  • the load lock chamber control unit 15 closes the purge opening / closing valve 35 with the purge gas supply unit 31 operated.
  • the supply of the purge gas into the load lock chamber 10 is stopped by the above, and the exhaust valve 28 is closed while the exhaust pump 26 is driven, thereby stopping the exhaust from the load lock chamber 10 and exhausting the exhaust gas.
  • the purge gas is supplied to the exhaust pipe 27 through the pipe 38 by opening the supply opening / closing valve 39 simultaneously with or after the stop of the engine, while the pressure in the load lock chamber 10 becomes the second reference pressure, The supply of the purge gas into the load lock chamber 10 and the exhaust from the load lock chamber 10 are restarted. Close the supplying on-off valve 39 behind which is configured so as to stop the supply of purge gas of the to the exhaust pipe 27.
  • the cover body 90 has the same shape as the substrate to be processed K, but is not limited to this, and can be stored in the cassette 80 similarly to the substrate to be processed K, and at least the substrate to be processed is processed. Any shape may be used as long as the entire upper surface of the substrate K can be covered.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention porte sur un procédé et un système de traitement de substrats qui permettent d'empêcher, pour un faible coût et de façon améliorée, la contamination de substrats (K) devant être traités à l'aide d'une matière organique dans un sas de chargement (10). Le procédé de traitement de substrats selon l'invention comprend : une étape de préparation lors de laquelle, une fois qu'une pluralité de substrats à traiter (K) ont été placés dans une cassette (80) et chargés dans le sas de chargement (10), on réduit la pression tout en introduisant un gaz de purge ; et une étape de traitement lors de laquelle un mécanisme de transport situé dans une chambre de transport reliée au sas de chargement (10) retire les substrats à traiter (K) placés dans la cassette (80), les transporte vers une chambre de traitement où ils seront traités, retire les substrats traités (K) de la chambre de traitement et place ensuite les substrats (K) placés dans la cassette (80) dans le sas de chargement (10). Lors de l'étape de préparation, la position d'alimentation du gaz de purge est réglée dans une position située au-dessus de la cassette (80), la position de décharge est réglée dans une position située en-dessous de la cassette (80), et la cassette (80) est montée entre la position d'alimentation et la position de décharge. Toute la surface supérieure du substrat du niveau supérieur à traiter (K) placé dans la cassette (80) est recouverte d'un couvercle déposé par-dessus ladite surface. En outre, lors de l'étape de préparation, lorsque la pression à l'intérieur du sas de chargement (10) atteint une première pression de référence, l'alimentation du sas de chargement (10) en gaz de purge et la décharge du gaz de purge depuis le sas de chargement (10) sont interrompues et lorsque la pression atteint une seconde pression de référence, l'alimentation du sas de chargement (10) en gaz de purge et la décharge du gaz de purge depuis le sas de chargement (10) redémarrent.
PCT/JP2011/065868 2010-07-13 2011-07-12 Procédé et système de traitement de substrats WO2012008439A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012524554A JPWO2012008439A1 (ja) 2010-07-13 2011-07-12 基板処理方法及び基板処理システム
KR1020127031947A KR20130016359A (ko) 2010-07-13 2011-07-12 기판 처리 방법 및 기판 처리 시스템

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-158370 2010-07-13
JP2010158370 2010-07-13

Publications (1)

Publication Number Publication Date
WO2012008439A1 true WO2012008439A1 (fr) 2012-01-19

Family

ID=45469437

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/065868 WO2012008439A1 (fr) 2010-07-13 2011-07-12 Procédé et système de traitement de substrats

Country Status (4)

Country Link
JP (1) JPWO2012008439A1 (fr)
KR (1) KR20130016359A (fr)
TW (1) TW201216337A (fr)
WO (1) WO2012008439A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110957238A (zh) * 2018-09-26 2020-04-03 株式会社国际电气 半导体器件的制造方法、衬底处理装置及记录介质
US10971382B2 (en) 2018-07-16 2021-04-06 Samsung Electronics Co., Ltd. Loadlock module and semiconductor manufacturing apparatus including the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11183404B2 (en) 2018-10-31 2021-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Diffuser and semiconductor processing system using same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211761A (ja) * 1994-01-21 1995-08-11 Tokyo Electron Ltd 処理装置内の被処理体の搬送方法
JP2007035874A (ja) * 2005-07-26 2007-02-08 Tokyo Electron Ltd 真空処理システム
JP2007149948A (ja) * 2005-11-28 2007-06-14 Tokyo Electron Ltd 真空処理装置
JP2009267220A (ja) * 2008-04-28 2009-11-12 Nec Electronics Corp 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211761A (ja) * 1994-01-21 1995-08-11 Tokyo Electron Ltd 処理装置内の被処理体の搬送方法
JP2007035874A (ja) * 2005-07-26 2007-02-08 Tokyo Electron Ltd 真空処理システム
JP2007149948A (ja) * 2005-11-28 2007-06-14 Tokyo Electron Ltd 真空処理装置
JP2009267220A (ja) * 2008-04-28 2009-11-12 Nec Electronics Corp 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10971382B2 (en) 2018-07-16 2021-04-06 Samsung Electronics Co., Ltd. Loadlock module and semiconductor manufacturing apparatus including the same
US11501987B2 (en) 2018-07-16 2022-11-15 Samsung Electronics Co., Ltd. Loadlock module and semiconductor manufacturing apparatus including the same
CN110957238A (zh) * 2018-09-26 2020-04-03 株式会社国际电气 半导体器件的制造方法、衬底处理装置及记录介质
CN110957238B (zh) * 2018-09-26 2024-01-09 株式会社国际电气 半导体器件的制造方法、衬底处理装置及记录介质

Also Published As

Publication number Publication date
TW201216337A (en) 2012-04-16
KR20130016359A (ko) 2013-02-14
JPWO2012008439A1 (ja) 2013-09-09

Similar Documents

Publication Publication Date Title
JP7165216B2 (ja) 基板キャリア及びパージチャンバの環境制御を伴う基板処理のシステム、装置、及び方法
JP4916140B2 (ja) 真空処理システム
JP5048352B2 (ja) 基板処理方法及び基板処理装置
JP5806827B2 (ja) ゲートバルブ装置及び基板処理装置並びにその基板処理方法
JP3486821B2 (ja) 処理装置及び処理装置内の被処理体の搬送方法
JP2009062604A (ja) 真空処理システムおよび基板搬送方法
US20190096702A1 (en) Substrate processing apparatus, substrate processing method, and computer storage medium
KR101669752B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
JP2007149948A (ja) 真空処理装置
WO2012008439A1 (fr) Procédé et système de traitement de substrats
JP5224567B2 (ja) 基板処理装置、基板処理方法および半導体装置の製造方法
US20180105933A1 (en) Substrate processing apparatus and method for cleaning chamber
JP2009267012A (ja) 真空処理装置及び真空処理方法
TWI462173B (zh) 基板處理方法及基板處理裝置
JP2005019739A (ja) 被処理体の搬送方法
JP2012138540A (ja) 真空処理装置
JP2003115519A (ja) 半導体装置の製造方法、半導体製造装置、ロードロック室、基板収納ケース、ストッカ
JP2003306771A (ja) グローブボックス付き成膜装置
JP2012129232A (ja) 基板処理装置及び半導体装置の製造方法
JP2010192513A (ja) プラズマ処理装置およびその運転方法
WO2006003880A1 (fr) Dispositif de traitement sous vide
JP7379042B2 (ja) 真空搬送装置および真空搬送装置の制御方法
CN113365747A (zh) 用于清洁真空系统的方法、用于真空处理基板的方法以及用于真空处理基板的设备
WO2002052638A1 (fr) Procede de regulation de pression, dispositif de transfert, et outil en grappe
KR100489638B1 (ko) 반도체장치제조설비의건식식각설비

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11806769

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2012524554

Country of ref document: JP

ENP Entry into the national phase

Ref document number: 20127031947

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11806769

Country of ref document: EP

Kind code of ref document: A1