201216337 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種在降低壓力大氣下對受處理基板進 行處理之基板處理方法及基板處理系統，特別是一種使受處理 基板於降低壓力大氣下之裝載鎖室内待命之基板處理方法及 基板處理系統。 【先前技術】 已知則述基板處理系統為一項揭示於特開2〇〇7_35874號 公報之習知技術。 該基板處理系統包含有：裝載鎖室，係收納有匡部者；處 f室，係用以處理受處理基板者；傳送室，係設置成與裝載鎖 室及處理室相連者；降低裝載鎖室大氣壓力裝置，係排出裝載 鎖室内之氣體並降低該裝載鎖室内之大氣壓力者；沖洗氣體供 應裝置係將冲洗氣體供應至裝載鎖室内者；降低傳送室大氣 壓力裝置，係排出傳送室内之氣體並降低該傳送室内之大氣麗 力者，及降低處理至大氣壓力襄置，係排出處理 降低該處理室内之从壓力者。 前舰部侧以收納複數片呈平板狀之受處理基板，且該 複數片受f理基祕定直方向㈣缝層狀。 ^讀傳送以設有傳魏置，藉由該傳送裝置取出前 ，裝載鎖室内之£部所收納的受處理基板，並傳送至前述處理 至内’接著，反而為之，自處理室内取出業經處理之受處理基 板，並收納於前述裝載鎖室内之匣部。 再者㈣’t洗氣體供麟置將沖洗氣雜應至裝載鎖室 201216337 内之供氣位置會設定在前述g部之上方位置，且前述降低裝載 鎖室大氣壓力裝置自裝載鎖室排出氣體之排氣位置會設定在 前述E部之下方位置’又，前述匣部會裝載於前述供氣位置及 排氣位置之間。 因此’藉由該基板處理系統先利用降低處理室大氣壓力裝 置來降低處理室内之大氣壓力，並利用降低傳送室大氣壓力裝 置來降低傳送室内之大氣壓力，而使該處理室及該傳送室達到 大致相同之減壓狀態。 在這同時或是其後，在處於大氣壓力下之裝賴室内裝載 有具備複數受處理基板之㈣’並藉由降低輯鎖室大氣壓 力裝置來降低該裝載鎖室内之大氣壓力。 尸此時’藉由沖洗氣體供應裝置自設定於匠部上方位置之供 氣位置將沖洗氣體供應至裝載鎖室内，另—方面，藉由降低裝 大氣壓力裝置自設定_部下方位置之排氣位置將裝 鎖室内之氣體排出，藉此，該裝载鎖室會-面供應沖洗氣體 一面降低大氣壓力。 會暴露在由賴氣位置及職錄間之前述匣部 為㈣氣位置流向前述排氣位置之沖洗氣流中。 '裝載鎖至内與前述傳送室及處理室之大氣壓力大致相 同時，藉由靖送裝置取„ === 處理後，藉由前述傳送/置==受===定 納於前述顏顧之&處理基板，再收 其後，以_麵_部⑽有受處縣板進行處理後， 4 201216337201216337 VI. Description of the Invention: [Technical Field] The present invention relates to a substrate processing method and a substrate processing system for processing a substrate to be processed under a reduced pressure atmosphere, and more particularly to a substrate subjected to a reduced pressure atmosphere The underlying load lock indoor standby substrate processing method and substrate processing system. [Prior Art] It is known that the substrate processing system is a conventional technique disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. The substrate processing system includes: a loading lock chamber for storing a scorpion; a chamber f for processing the substrate to be processed; and a transfer chamber for being connected to the load lock chamber and the processing chamber; and reducing the load lock The chamber atmospheric pressure device is for discharging the gas in the load lock chamber and reducing the atmospheric pressure in the load lock chamber; the flushing gas supply device supplies the flushing gas to the load lock chamber; and the transfer chamber atmospheric pressure device is discharged from the transfer chamber. The gas reduces the atmospheric force in the transfer chamber, and reduces the treatment to atmospheric pressure. The discharge process reduces the pressure from the chamber. The front side of the front side of the ship is provided with a plurality of processed substrates which are in the form of a flat plate, and the plurality of pieces are subjected to a straight direction (four) slit layer shape. ^ Read transfer to provide the transfer device, before the transfer device is taken out, load the processed substrate contained in the portion of the lock chamber, and transfer it to the inside of the process. Then, instead, take it out of the process chamber. The processed substrate to be processed is housed in a crotch portion of the load lock chamber. Furthermore, (4) 't wash gas supply for the lining, the gas supply position to the load lock chamber 201216337 will be set above the g portion, and the aforesaid lower load lock chamber atmospheric pressure device discharges gas from the lock chamber The exhaust position is set to a position below the E portion. Further, the crotch portion is placed between the air supply position and the exhaust position. Therefore, the substrate processing system first reduces the atmospheric pressure in the processing chamber by reducing the atmospheric pressure device in the processing chamber, and reduces the atmospheric pressure in the transfer chamber by lowering the atmospheric pressure device in the transfer chamber, so that the processing chamber and the transfer chamber are attained. The same decompression state. At the same time or thereafter, (4) with a plurality of substrates to be processed is loaded in the equipment chamber under atmospheric pressure and the atmospheric pressure in the load lock chamber is lowered by lowering the lock chamber atmospheric pressure device. At this time, the urinary body supplies the flushing gas to the load lock chamber by the flushing gas supply device from the air supply position set at the upper position of the smithing department, and on the other hand, by lowering the exhaust gas at the lower position of the atmospheric pressure device The position discharges the gas in the lock chamber, whereby the load lock chamber supplies the flushing gas to reduce the atmospheric pressure. It will be exposed to the flushing airflow flowing from the aforementioned position to the aforementioned exhaust position by the (4) gas position between the gas position and the job record. 'When the loading lock is almost the same as the atmospheric pressure of the transfer chamber and the processing chamber, the 靖 delivery device takes „ === after the treatment, and the above transmission/set == accept === is specified in the above-mentioned Yan Gu & processing the substrate, and then processing it, after the _ surface _ part (10) has been treated by the county plate, 4 201216337
裝载鎖室内恢復為大氣壓力，並將已處理g部與待處理 換後，再採用相同方法進行處理。 。朁 再者，在降低壓力大氣(真空)下處理基板之系統中 現由裝載鎖㈣之獨部、_料產生錢㈣，或 物質由前獅低裝侧室錢壓力裝置逆流之縣，若是 機物質附著於在該裝載鎖室内待命之受處理基板上，所附著Λ 有機物質則會對前述處理室内所進行之触產生不良影響。 因此’在前述基板處理系統中，將沖洗氣體供應至前述 麵室’域前舰縣露在該核驗巾，觀，該沖 流會預防有機物質人紐勒，且可積極地财機物質隨著沖 洗，體-併排出室體外部，並藉由該等作用預防有機物質附著 於受處理基板上。 [習知技術文獻] [專利文獻] [專利文獻1]特開2007-35874號公報 【發明内容】 [發明欲解決之課題] 在前述基域知技射，妓處理基板放置於 裝載鎖室⑽命時’會_料洗碰供應至裝健室内並排 出裝戴鎖室内之氣體’就減少沖洗氣體使时、節_電量 降低製造成本之觀點而言，尚有改善的空間。 若是特別重視減輕或預防有機物質污染，而供應大量之沖 洗氣體’並將該裝載鎖室内之壓力維持得較高，這樣一來，雖 對縮短有機物質之平均自由行程(職free_有所助益，但 201216337 部會因沖洗氣體使用1：增加’而出現如上述般增加製 問題。 又’在前述基板處理系統之習知技術中，收納於£部最上 層^受處理基板亦有容紐生㈣有機物f污染的問題，即， 如則述般’在前絲板處料統之習知技術巾，會將沖洗氣體 供應至裝載駐，並使H部暴露在断洗氣流中，藉此預防有 機物質附著於受處理基板上，但是魏納練勒最上層之受 處理基板而言’由於自E部露出之部分較多，故該露出；分ς 然會有可能與有齡質接觸，且該露出部分㈣受到有 的污垫。 貝 特別是採用氟化氫氣體等處理氣體之非電裝製程 process)來敎處理基板妨處理時，其處理賴大多會比電 賴程花費更多_，錢處理基板在裝載魅内待命的時間 也會拉長’因此，前述各項問題會更為顯著。 又，在該非電漿製程中，由於不會進行在電浆製程會有之 以分子程度(molecuiar level)對受處理基板表面附著物 物質)進行物雌的清潔化動作，因此，若是受處理基板上附 著有機物質，财漏質會_受處理基板與處理氣體之接 觸’並造成_速率降低、_平均性劣化制題，其結果會 導致受處理基板之成品率降低、製造成本提高等問題° 有鏗於前述狀況，本發明之目的在於可預防受處理基板受 到有機物質污染，骑_造成本，域供—種可完全預防裝 =鎖，内之受處理基板受到有機物f污染之基板處理方祕 基板處理系統。 201216337 f用以解決問題之方法j 納為處理频題之本方法發日祕—種在㈣鎖室内收 =i板後’供應沖洗氣體至該裝軸室内並由該裝載鎖 ί 雖低職_室内之錢勤板處理方 法，且該基板處理方法係包含有·· 之間；及 典驟’係分別將前述沖洗氣體之供氣位置設定在前述 ^土板之上方位置、排氣位置設定麵述受處理基板之下 方位置，前較處縣減餅_供錄置及排氣位置 處理步驟’_由連接設置贿财鋪室並處於降低壓 大氣狀態下之傳送室内的傳送裝置來取出前述裝載鎖室内 =處理f板’並傳送至連麟置於該傳送室並處於相同減壓 上:的祕處理至内，並在該處理奸處理受處理基板後， 藉由f述傳送襄置自處理室取出業經處理之受處理基板並收 納於前述裝載鎖室内， 产又’在前述準備步驟中，進行前述沖洗氣體之供應及排 風’並在裝載鎖室岐氣壓力達到前述第1基準壓力時停止供 應沖洗氣體，並在此時或是微停止自前述裝載鎖室哺出氣 體，在排祕止後’讀魏_室岐紐力高於前述第i 基準壓力而達到第2基準壓力時，重新開始沖洗氣體之供應及 排氣。 又’本裝置發·—種基板處理祕，係包含有： 裝載鎖室，係收納有受處理基板者； 處理至’ 處理前述受處理基板者； 201216337 傳送室，係設置成與前述裝载鎖室及處理室相連者. 置’係設置於前述傳送室内，狀取崎述裝載鎖 =内之线理基板並傳送至前述處理室内，接著，自前述處理 至内取出受處理基板’並收納於前述裝載鎖室内者， 降低裝_室大氣壓力裝置，係排出錢裝_室内之氣 體並降低該裝載鎖室内之大氣壓力者； 沖洗氣體供應裝置，係將沖洗氣體供應至前述裝載鎖室内 者； 壓力檢測裝置，係檢顺述襄載鎖室内之大氣壓力者， 控制裝置，係控幡麟低裝細室錢壓力I置及沖洗 氣體供應裝置之運作者， 降低傳送至大氣壓力裝置，係排出前述傳送室内之氣體並 降低該傳送室内之大氣壓力者；及 降低處理至大氣壓力裝置，係排出前述處理室内之氣體並 降低該處理室内之大氣壓力者， 此又’則述沖洗氣體供應裝置中用以將前述沖洗氣體供應至 别述農載鎖室内之供氣位置係設定在前述受纽絲之上方 位置者， 剛述降低裝載鎖室大氣壓力裝置中用以自前述裝載鎖室 排出氣體之排氣位置係設定在前述受處理基板之下方位置者， 且前述受處理基板裝.前祕氣位置及誠位置之間， 又’在前述控制裝置中， 在前述受處理基板收納在前述裝载鎖室内時， 藉由前述沖洗氣體供縣置料洗氣顏應至前述震載 201216337 鎖室内，並藉由前述降低襞_室大氣壓力裝置自裝載鎖室内 排出氣體鱗低職载鎖室内之大氣壓力，當前述壓力檢測裝 置所檢測之前述裝細室岐氣壓力達邮i基準壓力時，前 述沖洗氣舰驗置铸止供應前述沖洗纽，且前述降低裝 載鎖室大氣壓力|置會在啊或是稍後停止自驗裝載鎖室 内排出氣體， 在則述停止動作後，當前賴力檢職置所檢測之裝載鎖 至内大氣壓力向於前述第丨基準壓力而制第2基準壓力時， 前述沖洗紐供絲置會重糊雜餅洗氣體，且前述降低 裝載鎖室大氣壓力裝置會重糊始自前述裝載鎖室内排出氣 體。 藉由本發明’先_降低處理室大紐力裝置來降低處理 室内之大氣壓力，並细降⑽送室錢壓力裝置來降低傳送 室内之大氣壓力，*使鱗理室及傳送室制大致相同之減壓 狀態。 另外，處於大氣壓力下之裝載鎖室内收納有受處理基板， 又’該受處理基板賴於前賴氣位置及減位置之間。 又’在預定位置裝载受處理基板後，且該受處理基板在裝 載鎖室内待命時，在前魅繼置之控制下進行下列處理 驟。 即’首先藉由降低裝載鎖室大氣壓力裝置自設定於下方位 置之排氣位置排出裝載鎖室内之氣體，另外，藉由沖洗氣體供 應裝置自設定於受處理基板上方位置之供氣位置將沖洗氣體 供應至裝軸室内，並―面供應沖洗氣體-©降低大氣壓力。 9 201216337 又’比方說可使職化缝體來作騎洗鐘，但不受限於此。 如此來，裝載於前述供氣位置與排氣位置間之受處理芙 板會暴露在由供氣位置流向排氣位置之沖洗氣流中。^ 如前述般，在降碰力大氣下之裝載魅財可能會存在 ί機物f ’但與f知技_同，藉由使钱縣縣露在沖洗 軋抓中，可預防有機物質附著於受處理基板上。 再者’在本發日种，當壓力檢測裝置所檢測之震載鎖室内 壓力時，沖洗氣體供應裝置會停止將沖洗氣 體供應至震載鎖室内，且降低裝載鎖室大氣壓讀置會在 或是稍後停止自裝載鎖室内排出氣體。 6又，在前述停止動作後，#壓力檢職置所檢測之裝 室内大氣壓力S於第丨基準壓力而_第2鱗壓力時，降低 褒載鎖室大氣壓力裝置會重新開始自裝載鎖室内排出氣體，且 沖洗氣體供應I置會重新開始將沖洗氣體供應至I載鎖室 内並會再度降低震載鎖室内之大氣壓力。 之後，#受處理基板於裳載鎖室内待命L複地持續 進行停止、錄開始沖洗氣體供應以及排氣動作。 、 經過本發明人等就前述_之解決方法竭盡心力研究的 結果’推知出若是—面將沖洗驢供應至裝載鎖室内並—面將 裝載鎖室内之域壓力較財壓力時，之齡使停止供應沖 洗氣體並停止由«_室⑽域體，仍可_驗有機 附著於受處板±，並可較處理絲上錢㈣附著 度縮減至容許範圍内。 根據前述習知例，已知若要預防有機物質附著在受處理基 201216337 ί二=氣!為一項不可或缺之要件，但是，經過本發明人 梦伽〜研九^絲’得知即使停止供應沖洗紐並停止由 理廄在^排出氣體’仍可持續前述作用，此處持續作用的原 =應tr停止供應沖洗氣體並停止域載鎖㈣排出氣 =沖^體仍會殘留於賴鎖室内，並藉此抑制有機 平均自由行程。 、fM W 轉完钱錄g，故若是停止前 ㈣，外部氣體會因滲漏而人侵裝載鎖室内，並導致該 '至内之大碰力上昇，但是在取出受處理基板時，會因 内揭回復至等同於相鄰之傳送室、處 ”、、而’右魏鎖室内之壓力太高，會因為需花 費時間使其降低大氣壓力故不適用。 广基此，在本發明中，當壓力檢測震置所檢測之裝載鎖室内 大乳壓力高於第丨基賴力而_第2基準壓力時，降低裝載 鎖室大力裝置會麵_自裝_室_岐體，且沖洗 乳體供應裝置會重酬始將沖洗氣體供應至裝載鎖室内。 根據本發明人等考量前述各點所得出之推論，前述第i 準壓力以設定在10Pa〜30Pa之範圍内者為佳，又，前述第 基準壓力以奴在咖〜3〇咖之範咖者為佳。 基 2 再者，若是在降低壓力大氣下，聚载鎖室内之設定壓力極 低時’有時-面供應沖洗氣體一面排出氣體之 裝載鎖室内之錢壓力降低至該蚊壓力，鱗，料止^ 氣體供應以及職動作時，最好是先停止供鱗洗氣體，在預 定時間後才停止魏，藉由在停止供齡洗氣體之狀態下降低 201216337 大氣壓力’可使裝載鎖室内之大氣壓力達_設定壓力。 如前述般，當受處理基板在襄載鎖室内待命時 ==傳送裝置自狨_室_㈣受處理基板並傳送至 室内，並在該處理室内進行預定處理後，藉由前述傳 送裝置再送回裝載鎖室内。 2此一來，根據本發明，當受處理基板在農载鎖室内待命 夺，由於該文處理基板會暴露在沖洗氣體之氣流範圍内， 預防有機物質附著於該受處理基板上。 y在可有效地獅受處理基板之有機物f污染的範圍 叹有収止沖洗氣體供應以及停止由裝_室内排出氣 體之時間’因此’可降低沖洗氣體使用量、節約用電，更可達 到降低製造成本的效果。 ^者·，在本發明之較佳構造態樣中，前述沖洗氣體供應裝 置包含有：-端連接至前述裝載鎖室供氣位置之供氣管，緊挟 在該供氣管上之沖洗關關，及連接至前述供氣管另一端之 沖1氣體供氣部。又’前述降絲_室域壓力健包含有 一端連接至前雜賴室職位置之聽管，緊挾在該排氣管 上之排氣用開_，及連接至前述排氣管另-端之排氣栗， 卜該基板處理系統更具有配管及供氣· _，該配管係— ，連接至位於前述沖洗_ _上游位置之前述供氣管、另一 知連接至位於則述排氣用卩棚閥下游位置之前述排氣管者，且 該供氣用卿閱係緊挾在該配管間者。 二述控制I置在前述核氣體供氣部之運作狀態下，藉由 賴則述沖相開卿，贿止财紐舰應对述裝載鎖 12 201216337 室内’並在前述排_之驅動狀態下，藉 關閥，以停止由前述裳載鎖室内排出氣體。】摘氣用開 前述控制裝置在㈣沖洗氣體供氣部進行 閉前述沖洗關_，崎止料洗氣體供紅前關 内’同時’在前^排氣泵進行驅動時’藉由關閉前述排氣用： 關閥，以停止由刚述裝载鎖室内排出氣體。 、汗 啟前=載Γ排氣後，最好在此同時或是稍後開 啟别祕-錢财述崎將前料洗氣體供摩至 刖述排d ’且财缝體會朝該排氣奸之下游位置流動通 過’並在進彳丁前述重啟處理後，最好在此同喊是猶後關閉前 述供氣用開關’以停止將前述沖洗氣體供應至前述排氣管。 當停止沖洗氣體供應並停止由裝載鎖奸排出氣體時，藉 由將沖洗氣體供應至魏管並雛谓位奴動触，可預防 有機物質自排氣栗逆流’並且當開啟排氣用開_重新進行排 氣時’可預防該有機物質入侵裝載鎖室内，因此， 防有機物質附著於受處理基板上。 又’用以供應至停止_下之賊管㈣洗氣體供應量 (流齡遠餘絲至賴齡之供歸，其㈣在於可較以 往大幅降低沖洗氣體之使用量。 再者’將沖錢雜紅魏管晴機料—定要是在由 裝載鎖㈣排出氣_同時，可在較其觸之預定時間後供 應:同樣地，停止將雜氣體供應至職管之_亦並不一定 要疋在進彳了前述纽處理的啊，可在較其觀之歡時間後 停止。 13 又，在本發明中’前述複數片受處理基板係以預定間隔呈 垂直方向收納概勒，且業敝_受處理基板之g部亦可 裝載於前職健室内的前述供氣位置及魏位置之間。 再者，刖述E部最好設置有包覆體，雌包覆體係、配置於 業經收納之受處理基板巾’錄於最上層之受處理基板的上 方’並至少可包覆触於最上層之受處理紐的上面整面者。 如前述般’在H部内收納有複數片受處理基板之態樣中， 雖然會產纽於最上層之受處理基板會比位於其下方之受處 理基板來得更容易受到有機物質污染之問題，但藉由設置前述 包覆體’即使疋位於最上層之受處理基板，仍可藉由包覆體來 預防接觸到有祕質’並驗附著該有機物質。 如此-來’可有效地預防收納於_内所有的受處理基板 受到有機物質之污染。 又’本發明之前述包最好與受處理基板之形狀相同， 如此來’則可以與受處理基板一併收納於匿部内，且該包覆 體收納在£部_位置會是最上層之受處理基板的上方位置。 前述包覆體亦可部之頂板，此時，該包覆體至少可包 覆業經收納且位於最上層之受處理紐的上面整面。 [發明效果] …根據本發明，由於在可有效地麵受處理基板之有機物質 巧染的範_ ’設有用以停止沖洗氣體供應及停止由裝載鎖室 内排出氣體之時間，因此，可降低沖洗氣體使用量、節約用電， 更可達到降低製造成本的效果。 又在複數片受處理基板收納於匣部内並進行供給之態樣 201216337 中，即使是收納於匣部内最上層之受處理基板，仍可預防其受 至J有機物質之污染，並可有效地預防收納於匣部内所有的受處 理基板受到有機物質之污染。 【實施方式】 p 食狀園式說明本發明之一種具體實施態樣。 如第1圖〜第3圖所示，本實施例之基板處理系統1包含 有其平面形狀呈四角形之傳送室，配置於該傳送室4〇内之 f送震置45 ’用崎轉送室㈣大賴力之降低傳送室大 氣壓力裝置41 ’經由門閥U連接設置於前述傳送室40的四 個外周面巾其中—面之裝載鎖室1()，分職由⑽5卜6卜 ^接置於其餘三個外周面之處理室5G、6G、7G，用以降 ^述裝賴至10内大紐力之降低魏鎖室大氣壓力裝置 將’t洗H體供應至裝載鎖室1()狀沖洗氣體供應裝置 μ H制降域賴室械壓姐置25及沖洗氣體供應 ^述卢ί 置之運作的輯鎖室控卿15，及用时別降低 ==。、:=1?壓力之_理室大氣壓力裝 40 #、、 會藉由其他控制部(未圖示)來控制傳送室 送褒置45’降低傳送室大氣壓力裝置41，門閥11、51、 伽應力裝置52、 如第3圖所示，右俞 知猶_室1G内設有用崎载匣部 載鎖室㈣贈向貫穿通過裝 _〜昇 ==::: 15 201216337 又，可適當烟密封構件來_前述昇降桿22貫穿通過裝載 鎖室1〇上之貫通部’且位於裝载鎖室1G内之昇降桿22中， 上端會=設置於前述裝載台2〇下部表面，而下端會藉 定設置於裝_室1G喊面之筒狀觸軟管23加以包覆。 再者’ 載鎖室10之底面形成有排氣口 12，且該排氣 口 I2連接有讀降低裝載鎖室大氣壓力裝置Μ ;在裝載鎖室The load lock chamber is restored to atmospheric pressure, and the processed g portion is replaced with the pending treatment, and then processed in the same manner. . Furthermore, in the system for processing substrates under reduced pressure atmosphere (vacuum), the singularity of the load lock (4), the money generated by the material (4), or the material that is backflowed by the lion's low-load side chamber money pressure device, if it is a machine substance Adhering to the substrate to be treated which is placed in the load lock chamber, the organic substance adhering thereto adversely affects the touch in the processing chamber. Therefore, in the foregoing substrate processing system, the flushing gas is supplied to the aforementioned chambers, and the pre-ship county is exposed to the nuclear test towel, and the flushing will prevent the organic substance human Newle, and the active financial substance may The rinsing, the body - and the outside of the chamber are discharged, and by these actions, the organic substance is prevented from adhering to the substrate to be treated. [PRIOR ART DOCUMENT] [Patent Document 1] JP-A-2007-35874 SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] In the above-described basic domain, the substrate is placed in a lock chamber (10). At the time of life, there is room for improvement in terms of reducing the amount of flushing gas and reducing the manufacturing cost of the flushing gas. If special attention is paid to reducing or preventing the contamination of organic substances, and a large amount of flushing gas is supplied, and the pressure in the load lock chamber is maintained high, so that the average free travel of organic substances is shortened. Benefits, but the 201216337 department will increase the use of flushing gas by 1: increasing the problem as described above. In addition, in the conventional technique of the substrate processing system, the top substrate of the substrate is also accommodated. The problem of contamination of the organic matter f, that is, the conventional technical towel at the front wire plate, as described above, supplies the flushing gas to the loading station and exposes the H portion to the blown air stream. Preventing the adhesion of organic substances to the substrate to be treated, but the substrate to be treated in the uppermost layer of Weinerer is 'exposed because there are more parts exposed from the E part; the branching may be in contact with the aged, and the The exposed part (4) is subjected to some stains. In particular, the non-electrical process process using a treatment gas such as hydrogen fluoride gas to process the substrate may be more expensive than the electric levitation process. More _, the time for the money processing substrate to stand by in the loading charm will also be lengthened. Therefore, the above problems will be more significant. Further, in the non-plasma process, since the cleaning process of the material on the surface of the substrate to be processed is not performed at the molecular level (molecuiar level) in the non-plasma process, the substrate to be processed is treated. When organic substances are attached to the surface, the contact between the substrate and the processing gas is caused by the contact between the substrate and the processing gas, and the problem is that the yield of the substrate to be processed is lowered and the manufacturing cost is increased. In view of the foregoing, the object of the present invention is to prevent the substrate to be treated from being contaminated by organic substances, and to ride the substrate, the domain can be completely prevented from being loaded, and the substrate to be treated is contaminated by the organic substance f. Secret substrate processing system. 201216337 f The method used to solve the problem is to use the method of dealing with the frequency problem. The species is secreted in the (four) lock room after receiving the i-plate. The supply of flushing gas to the shaft chamber is controlled by the load ί. The method of processing the indoor board, and the method of processing the substrate includes: and the step of setting the air supply position of the flushing gas to the upper position of the soil plate and the exhaust position setting surface The lower position of the substrate to be processed, the pre-counter county minus cake _ for recording and exhausting position processing steps'_ the above-mentioned loading is taken out by a conveyor that connects the bribe chamber and is in a transfer chamber under reduced atmospheric conditions The lock chamber=processes the f-plate' and transfers it to the secret chamber in which the lining is placed in the transfer chamber and is at the same decompression: and after the processing of the treated substrate, the self-processing is performed by the transfer The processed substrate to be processed is taken out and stored in the load lock chamber, and the production and the exhaust gas are supplied in the preparation step, and the helium gas pressure at the load lock chamber reaches the first reference pressure. Stop supplying the flushing gas, and at this time, or slightly stop feeding the gas from the loading lock chamber, after the deficiencies, the reading of the Wei_ventricular force is higher than the aforementioned i-th reference pressure to reach the second reference pressure. The supply of the flushing gas and the exhaust are restarted. Further, the present invention relates to a substrate processing method, which includes: loading a lock chamber and storing a substrate to be processed; processing to 'processing the substrate to be processed; 201216337 transfer chamber is provided with the aforementioned load lock The room and the processing room are connected to each other. The device is placed in the transfer chamber, and the wire substrate is loaded into the processing chamber, and then the processed substrate is taken out from the processing to the inside. In the foregoing load locker, the device is installed to reduce the atmospheric pressure of the device, and the gas in the room is discharged and the atmospheric pressure in the load lock chamber is lowered; the flushing gas supply device supplies the flushing gas to the loading lock chamber; The pressure detecting device is for checking the atmospheric pressure in the load lock chamber, the control device, controlling the Kirin low-loading room pressure pressure I and the operator of the flushing gas supply device, reducing the transmission to the atmospheric pressure device, discharging Passing the gas in the chamber and reducing the atmospheric pressure in the transfer chamber; and reducing the treatment to the atmospheric pressure device, discharging the gas in the processing chamber And reducing the atmospheric pressure in the processing chamber, wherein the air supply position in the flushing gas supply device for supplying the flushing gas to the other agricultural lock chamber is set at a position above the receiving wire. The exhaust position for reducing the gas discharged from the lock chamber in the atmospheric pressure device of the load lock chamber is set to be lower than the position of the substrate to be processed, and the front substrate and the position of the front substrate are installed. In the control device, when the substrate to be processed is housed in the load lock chamber, the flushing gas is supplied to the lock chamber in the lock chamber 201216337 by the flushing gas, and is lowered by the foregoing The 大气_room atmospheric pressure device discharges the atmospheric pressure of the gas scale in the low-load lock chamber from the load lock chamber. When the pressure of the above-mentioned chamber is detected by the pressure detecting device, the pressure of the flushing gas ship is verified. Casting the supply of the aforementioned flushing button, and the above-mentioned reduction of the atmospheric pressure of the load lock chamber|position will stop or discharge the gas in the self-test load lock chamber at a later time, and then stop After the operation, when the load lock detected by the current Lai Li inspection position reaches the second reference pressure and the second reference pressure is set to the first reference pressure, the flushing wire supply device will re-stick the cake washing gas, and the foregoing reduction The load lock chamber atmospheric pressure device will gradually discharge the gas from the aforementioned lock lock chamber. By reducing the atmospheric pressure in the processing chamber by the first method of reducing the processing chamber, and reducing the atmospheric pressure in the transfer chamber by reducing the pressure on the chamber, * making the scale chamber and the transfer chamber substantially the same. Decompressed state. Further, the substrate to be processed is housed in the load lock chamber under atmospheric pressure, and the substrate to be processed depends on the position of the front and the lower position. Further, after the substrate to be processed is loaded at a predetermined position, and the substrate to be processed is placed in the loading lock chamber, the following processing is performed under the control of the pre-magic relay. That is, first, the gas in the load lock chamber is discharged from the exhaust position set at the lower position by lowering the load lock chamber atmospheric pressure device, and the flushing gas supply device is flushed from the air supply position set at the position above the substrate to be processed. Gas is supplied to the shaft housing and the flushing gas is supplied to the surface -© to reduce atmospheric pressure. 9 201216337 Also, for example, it is possible to use the sewing body as a washing clock, but it is not limited to this. As a result, the processed panel loaded between the aforementioned air supply position and the exhaust position is exposed to the flushing airflow flowing from the air supply position to the exhaust position. ^ As mentioned above, the charm of the load in the atmosphere of the touchdown force may exist. The same thing as the f-technical _, by preventing the money county from being exposed to the washing and rolling, can prevent the attachment of organic substances to On the substrate being processed. Furthermore, in the current day, when the pressure detecting device detects the pressure in the shock lock chamber, the flushing gas supply device stops supplying the flushing gas into the shock lock chamber, and lowers the load lock chamber atmospheric reading. It is later stopped to discharge gas from the load lock chamber. 6、After the stop operation, the pressure inside the installation room detected by the #pressure inspection position is at the third reference pressure _ the second scale pressure, the device lowers the atmospheric pressure of the load lock chamber and restarts the self-loading lock chamber. The gas is exhausted, and the flushing gas supply I will restart to supply the flushing gas into the I-load lock chamber and will again reduce the atmospheric pressure in the shock-lock chamber. Thereafter, the #processed substrate is continuously stopped in the load lock chamber, and the flushing gas supply and the exhausting operation are started. After the inventors of the present invention have exhausted their efforts to study the results of the foregoing method, it is inferred that if the surface is supplied to the loading lock chamber and the surface pressure of the load lock chamber is higher than the financial pressure, the age is stopped. Supply of flushing gas and stop by «_ room (10) domain body, still can be organically attached to the receiving plate ±, and can be reduced to the allowable range compared with the wire (4). According to the conventional example described above, it is known that it is an indispensable element to prevent the attachment of organic substances to the treated substrate, but it is known by the present inventor Mengjia~Jianjiu^' Stop supplying the flushing nucleus and stop the venting of the gas in the 'supply gas'. The original function of the continuous action here should stop supplying the flushing gas and stop the domain load lock. (4) Exhaust gas = the body will remain in the lock Indoor, and thereby suppress the organic mean free travel. , fM W is transferred to the money record g, so if it is before the stop (four), the external gas will invade the lock chamber due to leakage, and cause the 'inward impact force to rise, but when the substrate is taken out, it will be caused The internal pressure is restored to be equal to the adjacent transfer chamber, and the pressure in the right Wei lock chamber is too high, which may not be applicable because it takes time to lower the atmospheric pressure. In the present invention, When the pressure in the load lock chamber detected by the pressure detection is higher than the second base pressure, the second reference pressure is lowered, the load lock chamber is lowered, the device is covered, and the body is washed. The supply device may recharge the supply of the flushing gas into the load lock chamber. According to the inference by the inventors of the present invention, it is preferable that the first i-th pressure is set within a range of 10 Pa to 30 Pa. The first benchmark pressure is better for the slaves in the cafes. The base 2 is better. If the set pressure in the load lock chamber is extremely low under the reduced pressure atmosphere, the surface is supplied with flushing gas. Gas load locks indoors with reduced pressure on the money The mosquito pressure, scale, material stop ^ gas supply and occupational action, it is best to stop the supply of scaled gas first, stop the Wei after a predetermined time, by reducing the atmospheric pressure of 201216337 in the state of stopping the supply of washing gas The atmospheric pressure in the load lock chamber can be set to _ set pressure. As described above, when the substrate to be processed is in standby in the load lock chamber == the transfer device is self-twisted_room_(4) processed substrate and transferred to the room, and in the process After the indoor processing is performed, it is sent back to the loading lock chamber by the aforementioned conveying device. 2 In this way, according to the present invention, when the processed substrate is in standby in the agricultural load lock chamber, the processing substrate is exposed to the airflow of the flushing gas. In the range, it is possible to prevent the organic substances from adhering to the substrate to be treated. y In the range of the organic matter f contamination of the substrate which can be effectively treated by the lion, it is possible to stop the supply of the flushing gas and stop the discharge of the gas from the chamber. The use of the flushing gas is reduced, the power consumption is saved, and the manufacturing cost is reduced. Further, in the preferred embodiment of the present invention, the flushing gas is used. The device comprises: a gas supply pipe connected to the gas supply position of the load lock chamber at the end, a flushing shutoff on the gas supply pipe, and a gas supply portion connected to the other end of the gas supply pipe. The aforementioned descending wire-room pressure pressure comprises an earpiece having one end connected to the front miscellaneous chamber position, the exhaust gas immediately adjacent to the exhaust pipe, and the row connected to the other end of the exhaust pipe The base plate processing system further has a pipe and a gas supply _, the pipe system is connected to the gas supply pipe located at the upstream position of the rinsing__, and the other is connected to the venting valve located at the venting The exhaust pipe in the downstream position, and the air supply system is next to the pipe. The control I is placed in the operating state of the nuclear gas supply unit, and is opened by Qing, the bribe and the financial ship should respond to the load lock 12 201216337 indoor 'and in the driving state of the aforementioned row _, the valve is closed to stop the gas exhausted from the aforementioned lock lock chamber. 】Opening the above-mentioned control device in (4) flushing gas supply section to close the flushing off_, and stopping the feed gas supply in the red front pass 'while' when the front exhaust pump is driven' by closing the aforementioned row Gas use: Close the valve to stop the gas exhausted from the lock lock chamber. Sweat before the start = after the exhaust, it is best to open the secret at the same time or later - Qiancai Qiqi will wash the gas before the supply to the arranging d' and the financial seam will face the exhaust The downstream position flows through 'and after the aforementioned restarting process, it is preferable to turn off the aforementioned air supply switch to stop supplying the aforementioned flushing gas to the exhaust pipe. When the flushing gas supply is stopped and the gas is stopped by the loading and unloading, by supplying the flushing gas to the Wei pipe and preventing the slave from being touched, it is possible to prevent the organic matter from flowing back from the exhausting chest and to open the exhaust gas. When re-exhausting, the organic substance can be prevented from intruding into the lock chamber, so that organic substances are prevented from adhering to the substrate to be processed. In addition, the supply of gas to the thief tube (4) is used to supply the supply to the thief (4). The (4) is that the amount of flushing gas can be greatly reduced compared with the previous one. Miscellaneous Wei Weiqing machine material - it must be discharged by the load lock (4) _ at the same time, it can be supplied after a predetermined time of contact: in the same way, stop supplying the gas to the service tube is not necessarily 疋In addition, in the present invention, the plurality of processed substrates are stored in a vertical direction at predetermined intervals, and the industry is _ The g portion of the substrate to be processed may be placed between the gas supply position and the Wei position in the front working room. Further, it is preferable that the E portion is provided with a covering body, and the female coating system is disposed and stored. The substrate to be treated 'recorded on the uppermost substrate to be processed' and at least covered with the upper surface of the uppermost processed layer. As described above, a plurality of processed substrates are accommodated in the H portion. In the aspect, although the uppermost processed substrate is produced It is more susceptible to contamination by organic substances than the substrate to be processed underneath, but by providing the above-mentioned coating body, even if the crucible is located on the uppermost substrate, the coating can be used to prevent contact with the secret. The quality of the organic substance is adhered to. Therefore, it is effective to prevent all the substrates to be processed contained in the substrate from being contaminated by the organic substance. Further, the aforementioned package of the present invention is preferably the same shape as the substrate to be processed, The cover can be stored in the concealed portion together with the substrate to be processed, and the cover is stored at the upper position of the uppermost substrate to be processed. The cover can also be the top plate of the cover. The coating body may at least cover the entire upper surface of the processed processing core which is accommodated and located at the uppermost layer. [Effect of the Invention] According to the present invention, due to the sensible dyeing of organic substances which can be effectively treated on the substrate 'There is a time to stop the supply of flushing gas and stop the gas exhausted from the load lock chamber. Therefore, the flushing gas usage can be reduced, electricity can be saved, and the manufacturing cost can be reduced. In addition, in the case of the processed substrate in which the plurality of substrates to be processed are stored in the crotch portion and supplied, the substrate can be prevented from being contaminated by J organic substances even if it is stored in the uppermost substrate in the crotch portion. It is possible to prevent all the substrates to be processed contained in the crotch portion from being contaminated by organic substances. [Embodiment] A specific embodiment of the present invention is described in the p-food form. As shown in Figs. 1 to 3, the present embodiment The substrate processing system 1 includes a transfer chamber having a quadrangular planar shape, and the f-transmission chamber 45 disposed in the transfer chamber 4' is lowered by the transfer chamber (4). The transfer chamber atmospheric pressure device 41' is passed through the gate valve. The U is connected to the four outer peripheral tissues of the transfer chamber 40, and the load lock chamber 1 () is placed in the processing chamber 5G, 6G, 7G of the remaining three outer peripheral surfaces by (10) 5 b 6 In order to reduce the atmospheric pressure of the Wei lock chamber, the device is supplied to the load lock chamber 1 (). The flushing gas supply device is used to reduce the pressure. And flushing gas supply Series lock chamber 15 controls the operation of the State, and do not decrease with time ==. ,: = 1? Pressure of the room atmospheric pressure device 40 #, will control the transfer chamber delivery device 45' by other control units (not shown) to lower the transfer chamber atmospheric pressure device 41, the gate valve 11, 51, The gamma stress device 52, as shown in Fig. 3, the right Yu Zhiju _ room 1G is equipped with a shackle-loaded shackle-loaded lock chamber (4) gift through the installation _~ liter ==::: 15 201216337 The sealing member _ the lifting rod 22 penetrates through the through portion of the loading lock chamber 1 and is located in the lifting rod 22 in the loading lock chamber 1G, and the upper end is disposed on the lower surface of the loading table 2, and the lower end is It is covered by a tubular contact hose 23 provided in the squirting chamber 1G. Further, the bottom surface of the load lock chamber 10 is formed with an exhaust port 12, and the exhaust port I2 is connected with a reading and lowering lock chamber atmospheric pressure device;
氣：：供氣:13連接有前述沖洗氣 供瑕•口 13位於前述裝載台2〇上之匣部 80的上方且ϋ部8〇位於連繫供氣口 13及排 位置上。 丁 J ㈣=第<!圖所不，前述E部8G具有以預定間隔呈垂直方向 來固持焚處理基板K之複數條固持溝S卜在本實施例中除 二^層者外’在各_持溝81皆分別插人受處理基板κ， 靜QO^之目持溝81插入其雜較處理基板W同之包 覆體90，且可自兩卹〇Λ 及包覆體90。° G之開口方向取出並放人受處理基板Κ 連接^^鎖室大氣壓力裝置25包含有：排聽26，一端 27 ~氣$ 26且另—端連接至前述排氣口 12之排氣管 Μ田配置於該排氣管27中間部之排氣關關28，又，當 排^^關閱28開啟時’會藉由排氣栗26經由排氣口 12及 排氣3來排岭載鎖室Η)内之氣體並降低大氣壓力。 氣體供應部沖洗氣體供應裝置30包含有：沖洗 „ 丄. 供乳s 32、分氣器(diffiiSer)33、通氣用開關 閥4、沖洗用_閥35、及流量調整部36。 201216337 、皇垃：供氣S 32其一端連結至沖洗氣體供應部31，另-端 接至前述裝载鎖室10之供氣 支歧管32a、32b，A中一去心”又其中間部分歧成兩 34，另一支歧其咖 設有前述通氣用開關閱 部36。 則設有前述沖洗用開關閥35及流量調整 ⑴述77絲33係—呈杯狀之構件，©定設置於穿截 的二10之内壁面’以阻塞設置於該内壁面上之前述供氣口^ 的開口，且其平面穿過設置有多數個貫通孔。 、十.^此:來，藉由該沖洗氣體供應裝置3〇將沖洗氣體自前 ，核讀供應部31供應至供網2，且断錢體經由供 耽口 3及分氣器33之貫通孔流入裝載鎖室10内。 此，’當通氣用開關閥34開啟，且沖洗用開關闕35酬 時，大量的沖洗氣體會經由該通氣用開關間34供應至裝載鎖 ，10内，並使該域鎖室㈣達到域壓力又，當裝載鎖 室1〇内達到大氣壓力後，該通氣用開關閥34則會關閉^ 另外’當通氣用開關閥Μ關閉，且沖洗用開 時，業經流量調整部36調整流量之沖洗氣體會經由該沖洗用 開關閥35供應至裝載鎖室⑴内。 前述降低傳送室大缝力裝置41包含有：排氣㈣，一 端連接至該職泵42且另-端連接至前述傳送室⑽之排氣管 43 ’及配置於該排氣管43中間部之開關閥料，又，當開關閥 44開啟時’會藉由排氣果42經由排氣管a來排出傳 =室仞 內之氣體並將大氣壓力降低至預定壓力。 、 前述傳送裝置45包含有：支樓台46，藉由前述支揮台勑 201216337 =使$線呈垂直方向並可沿縣直方向上下微動之支樓 ^艇財卿147 «使#斜方岐可在水平面上 伸縮^橫桿48，及設於雜桿48前端狀拾取臂49。 ，述降低處理室大氣壓力裝置52、62、72分別包含有： 53、63、73 ’ -端連接至該排氣泵53、63、73且另一 端連接^各處理室5〇、6G、7G之排氣t M、&、％，及配置 於各排氣管54、64、74中間部之開關閥55、65、乃，又，舍 開關閥55、65、75開啟時，會藉由排㈣3、63、73經‘ 氣g 54 64 74來翻各處理室5G、6G、7()内之氣體並將大 氣壓力降低至預定壓力。 又，别述處理室5〇、60、70係用以處理前述受處理基板 =之處理t，雖省略了其具體構造之說明，但其中會利用例如 乱化氫氣體、峨⑺醇、甲醇稱氣及亞俩氣體之混合氣 體等對受處理基板K上之二氧化賴蹄綱等各種處理。 再者，前述裝載鎖室控制部15侧以控制前述沖洗氣體 供應裝置3G之沖洗氣體供應部31，職關_ %，沖洗用 開關閥35及流量調整部30，祕降低輯魅大氣壓力裝置 25之排氣泵26及排氣用開關閥28，以及前述昇降驅動部21 之運作。 又，前述裝載鎖室10附設有用以檢測其内部大氣壓力之 壓力檢測H Π，且利職壓力檢測n π所檢測出之壓力相關 檢測訊號會傳送至前述裝載鎖室控制部15。 根據具有刖述構造之本基板處理糸統1的實施例可知：首 先，在前述其他控制部(未圖示)之控制下，藉由降低處理室大 201216337 氣壓力裝置52、62、72來降低各處理室5〇、6〇、7〇内之大氣 壓力，同時藉由降低傳送室大氣壓力裝置41來降低傳送室4〇 内之大氣壓力，以使該等處理室50、60、7〇内及傳送室4〇内 達到大致相同之減壓(真空账態，X，在其後運作之說明，係 以該其他控制部(未圖示)來控制傳送室4〇，傳送裝置45，降 低傳送室大氣壓力裝置41，門閥U、5卜61、71，處理室5〇、 60、70 ’及降低處理室大氣壓力裝置52、幻、72之運作。 另外，在大氣壓力下之裝載鎖室10内設置有匣部8〇，且 該匣部80可收納複數片受處理基板κ。 如第4圖所示，£部80中收納有複數片受處理基板κ， 更在位於壯狀受歧純Κ的上純納有做與受處理 基板Κ相同之包覆體90，且該狀態係呈包覆於該位於最上層 之=處理基板Κ的上面整面。再者’前述g部8G裝載於裝載 鎖室10内之裝載台20上，且其開口側82會設置於傳送室4〇 之對面方向。 當E部80裝載於裝載台2〇±時，在前述裝載鎖室控制部 15之控制下進行下列運作，又，在其後運作之說明中，係以 裝載鎖室控御I5來控斷洗氣體供應部3卜通氣關關閥 34、沖洗關_ 35及流量調整部％、排氣泵％及排氣用 開關閥28、以及昇降驅動部21。 "即’首先，t降低襄載鎖室大氣壓力裝置μ之排氣果進 灯，動時’排氣用開關閥Μ會開啟以藉此排出裝載鎖室⑺内 之孔體此外’切洗氣體供應裝置巾之沖洗氣體供應部 進行驅動時’通制開剩％會呈酬狀態且沖洗用開關 19 201216337 閥35舍呈開啟狀態，藉此，業經流量調整部36調整流量之沖 洗氣體會經由沖洗用開關閥35供應至裝載鎖室1〇内。基上， 裝載鎖室10會在供應沖洗氣體時一面減壓。又，例如可採用 亞石肖酸氣體作為沖洗氣體，但並不受限於此。 如此一來，裝載於裝載台20上之匣部80會暴露在由前述 分氣器33之貫通孔喷出並流向前述排氣口 12之沖洗氣流中。 因此’若裝載鎖室10内之大氣壓力與前述傳送室4〇及處 理室50、60、70大致相同時，會藉由前述傳送裝置45自前述 匣部80内取出受處理基板κ。 即’首先’在傳送裝置45中，拾取臂49會以支撐軸47 為軸旋轉並移至裝載鎖室1G之對面方向，接著門閥11開 啟’傳送奸45會伸出橫桿48並通過⑽11使拾取臂49 : 入裝載鎖室10内。 錯垂線方_聽健，歧前述拾取臂49 以使前述拾取臂49之位罟弒$從&Gas:: Air supply: 13 is connected to the flushing gas supply port 13 is located above the top portion 80 of the loading platform 2, and the crotch portion 8 is located at the connecting gas supply port 13 and the row position. D (J) = the first <! figure, the E portion 8G has a plurality of holding grooves S for holding the incinerated substrate K in a vertical direction at a predetermined interval. Each of the holding grooves 81 is inserted into the substrate κ, and the meshing groove 81 of the static QO^ is inserted into the covering body 90 of the miscellaneous processing substrate W, and is detachable from the two frames and the covering body 90. ° G is taken out in the direction of the opening and placed on the substrate to be processed. The connection chamber atmospheric pressure device 25 includes: an exhaust pipe having an exhaust 26, an end 27 to a gas 26 and an other end connected to the exhaust port 12 Putian is disposed in the exhaust shutoff 28 of the middle portion of the exhaust pipe 27, and when the exhaust switch 28 is opened, it will be exhausted through the exhaust port 12 and the exhaust gas 3 by the exhaust pump 26 Lock the gas inside the chamber and reduce atmospheric pressure. The gas supply unit flushing gas supply device 30 includes a flushing device 供, a milk supply s 32, a gas distributor (diffiiSer) 33, a ventilating switch valve 4, a flushing valve 35, and a flow rate adjusting unit 36. 201216337 The gas supply S 32 has one end connected to the flushing gas supply portion 31, and the other end is connected to the gas supply manifolds 32a, 32b of the load lock chamber 10, and the center of the center is "disengaged" and the middle portion thereof is divided into two. The other coffee maker is provided with the ventilation switch portion 36. The flushing on-off valve 35 and the flow rate adjustment (1) are described as 77-wire 33-cup-shaped members, and the thickness is set to the inner wall surface of the piercing two 10 to block the supply of air on the inner wall surface. The opening of the mouth ^, and its plane passes through a plurality of through holes. 10. This: By the flushing gas supply device 3, the flushing gas is supplied from the front, the nuclear read supply unit 31 to the supply net 2, and the money is passed through the through hole of the supply port 3 and the distributor 33 It flows into the load lock chamber 10. Therefore, when the venting switch valve 34 is opened and the flushing switch 阙 35 is paid, a large amount of flushing gas is supplied to the load lock 10 through the venting switch chamber 34, and the domain lock chamber (4) reaches the domain pressure. Further, when the atmospheric pressure is reached in the load lock chamber 1 ,, the ventilating switch valve 34 is closed. In addition, when the ventilating switch valve Μ is closed, and the flushing is opened, the flow rate adjusting unit 36 adjusts the flow rate of the flushing gas. It is supplied to the load lock chamber (1) via the flushing on-off valve 35. The lower transfer chamber large force device 41 includes: exhaust gas (four), one end connected to the duty pump 42 and the other end connected to the exhaust pipe 43' of the transfer chamber (10) and disposed at the middle portion of the exhaust pipe 43 The valve material is switched, and when the switching valve 44 is opened, the gas in the chamber is discharged by the exhaust gas 42 via the exhaust pipe a and the atmospheric pressure is lowered to a predetermined pressure. The conveying device 45 includes: a support tower 46, by the aforementioned support platform 201216337 = a line that makes the $ line vertical and can be moved up and down along the county direction. ^船财卿 147 «使#斜方岐The crossbar 48 is telescoped on the horizontal surface, and the pick-up arm 49 is provided at the front end of the miscellaneous rod 48. The lowering process chamber atmospheric pressure devices 52, 62, 72 respectively include: 53, 63, 73 ' - the end is connected to the exhaust pumps 53, 63, 73 and the other end is connected to each of the processing chambers 5, 6G, 7G The exhaust gas t M, &, %, and the on-off valves 55, 65 disposed at the intermediate portions of the exhaust pipes 54, 64, 74, and, when the switch valves 55, 65, 75 are opened, Rows (4) 3, 63, and 73 are used to turn the gas in each of the processing chambers 5G, 6G, 7 () by gas g 54 64 74 and reduce the atmospheric pressure to a predetermined pressure. Further, the processing chambers 5A, 60, and 70 are used to process the processed substrate = the processing t, and the description of the specific structure is omitted, but the hydrogen gas, the ruthenium (7) alcohol, and the methanol are used, for example. Various treatments such as a gas mixture and a gas mixture of the two gases on the substrate K on the substrate K are treated. Further, the loading lock chamber control unit 15 side controls the flushing gas supply unit 31 of the flushing gas supply unit 3G, the duty switch _%, the flushing switch valve 35, and the flow rate adjusting unit 30, and the sacred atmospheric pressure device 25 is lowered. The exhaust pump 26 and the exhaust switching valve 28 and the operation of the above-described elevation drive unit 21 are provided. Further, the load lock chamber 10 is provided with a pressure detection H 用以 for detecting the internal atmospheric pressure thereof, and the pressure-related detection signal detected by the profit pressure detection n π is transmitted to the load lock chamber control unit 15. According to the embodiment of the substrate processing system 1 having the structure described above, first, under the control of the other control unit (not shown), the processing chamber is reduced by the 201216337 gas pressure devices 52, 62, 72. The atmospheric pressure in each of the processing chambers 5〇, 6〇, 7〇, while reducing the atmospheric pressure in the transfer chamber 4〇 by lowering the transfer chamber atmospheric pressure device 41, so that the processing chambers 50, 60, 7 And the transfer chamber 4〇 reaches substantially the same decompression (vacuum mode, X, after the operation of the operation, the other control unit (not shown) controls the transfer chamber 4〇, the transfer device 45, reduces the transfer The chamber atmospheric pressure device 41, the gate valves U, 5, 61, 71, the processing chambers 5〇, 60, 70' and the operation of reducing the atmospheric pressure devices 52, illusion, 72 of the processing chamber. In addition, the load lock chamber 10 under atmospheric pressure The crotch portion 8 is provided inside, and the crotch portion 80 can accommodate a plurality of substrates to be processed κ. As shown in Fig. 4, a plurality of processed substrates κ are accommodated in the portion 80, and are located in a strong shape. The upper pure nano of the crucible has the same coating body 90 as the substrate to be processed, and the shape is The entire surface of the upper surface of the processing substrate Κ is covered. Further, the g portion 8G is mounted on the loading table 20 in the loading lock chamber 10, and the opening side 82 thereof is disposed in the transfer chamber 4. When the E portion 80 is loaded on the loading table 2〇±, the following operations are performed under the control of the loading lock chamber control unit 15, and in the description of the subsequent operation, the loading lock chamber is controlled. I5 controls the purge gas supply unit 3, the vent shutoff valve 34, the flushing switch _35 and the flow rate adjusting unit %, the exhaust pump % and the exhaust switching valve 28, and the lift drive unit 21. " tReducing the exhaust gas of the atmospheric pressure device of the load lock chamber into the lamp, and the 'exhaust switch valve Μ will be opened to discharge the hole in the load lock chamber (7) and the rinse of the cut gas supply device When the gas supply unit is driven, the throughput is increased and the flushing switch 19 201216337 is opened to the valve 35, whereby the flushing gas whose flow rate is adjusted by the flow rate adjusting unit 36 is supplied via the flushing on-off valve 35. Up to the inside of the lock chamber 1 . On the base, the lock chamber 10 is loaded. When the flushing gas is supplied, the pressure is reduced. Further, for example, sulfite gas can be used as the flushing gas, but it is not limited thereto. Thus, the flange 80 loaded on the loading table 20 is exposed by the foregoing. The through hole of the distributor 33 is ejected and flows into the flushing airflow of the exhaust port 12. Therefore, if the atmospheric pressure in the loading lock chamber 10 is substantially the same as that of the transfer chamber 4 and the processing chambers 50, 60, 70, The substrate to be processed κ is taken out from the above-mentioned crotch portion 80 by the above-described conveying device 45. That is, 'first' in the conveying device 45, the pickup arm 49 is rotated about the support shaft 47 and moved to the opposite direction of the load lock chamber 1G. Then, the gate valve 11 is opened. 'Transfer 45 will extend the crossbar 48 and pass the pickup arm 49 through the (10) 11 into the lock chamber 10. The wrong side of the pick-up arm 49 to distinguish the aforementioned pick-up arm 49 from &
L此時，前述襄載台20之位置會藉由前述昇降驅動部朝 20 201216337 不同處理步驟’亦可依序使受處理基板κ通過各 處理^0,、70，並對該受處理基板κ進行一連串處理。 裝置rut縣板κ輯狀敢處賴錢，前述傳送 ㈣詩處理室5G、6G、7G取出受處理基板κ，並再度收 納於裝載鎖室10之匣部80内。 考j此」、料對收納㈣部⑽内之所有受處理基板K完成 别述冲洗氣體供應裝置3〇會關閉沖洗用開關閥％並 開啟通氣__ 34 ’靖大量沖洗氣體供應至職鎖室⑺ 内’且使該裝載鎖室10恢復為大氣壓力，又，此時，前述降 低裝載鎖至大乳壓力裝置25會關閉其排氣用開關闕28。排氣 用開關閥28之關閉時機可與前述通氣用開關閥34之開啟動作 同步，亦可早於該開啟動作。 田裳載鎖至10内恢復為大驗力之後，會將業經處理之 匿部8〇替換^未處理之£部8〇，之後進行相同之處理步驟。 再者’在«Γ述處理步驟中，當匿部8〇在裝載鎖室1〇内待 命時，裝載鎖室控制部15會進行下列運作。 即’裝載鎖室控制部15會監視以壓力檢測器17所檢測出 之裝載鎖至ίο内部錢壓力，並賴錢壓力設為預定第1 基準壓力’此時’關閉沖洗用開關閥35並停止將沖洗氣體供 應至裝載鎖至K)内’在此同時或是稍後麵前述排氣用開關 閥28 ’並停止排出裝載鎖室1〇内之氣體，又，可在此時停止 排氣栗26及沖洗氣舰卿Ή之運作，柯使其驅動狀 續不斷。 一 心 然而^開始供應沖洗氣體並停止排氣後當以壓力檢測 21 201216337 達到第鎖室内部大氣壓力高於第1基準壓力而 開關閱觸氣二會開啟前述排氣用 開始自裝麵㈣嶋__26)而重新 沖洗氣體供舰_關閥35(若 將沖洗氣舰應线_^=職翔鑛作)㈣新開始 進行it後料1鲜勤及第2鮮動絲準，重複 r止/重啟冲洗氣體供應及排出氣體。 fit述内容已詳細說明本實施形態之基板處理系統1的具 =及其運作，由魏咖料知，勤本實郷態之基板 =系統1 ’當受處理基板K在裝載鎖室K)内待命時，利用 ^洗氣體供應裝置30將沖洗氣體供應至裝載鎖室ι〇内，因 ㈣Γ納有讀理基板部8G會暴露在該沖洗氣流中， 二 =洗氣流來預防有機物質入紐部内，或是使有機物 質迎者冲洗乳體一併排出裝載鎖室1〇外，藉由該等作用，會 預防有機物質附著於受處理基板κ上。 再者’在本實卿態之基域理祕丨+，當裝載鎖室 10内大氣壓力達到第丨基準壓力時，會停止自該絲鎖室1〇 内排出氣體並停止將沖洗氣體供應至該裝載鎖室10内；當裝 載鎖室1G内壓力達到第2基準壓力時，會重新開始前述:陳 及供氣’妖減树明人#讀論：若是料喊體供應至 襄載鎖室10内並降低該裝載鎖室10内之大氣壓力至預定壓力 時，之後即使停止沖洗氣體供應並停止排氣，仍可持續預防有 機物質附著於受處理紐Κ上之侧，並可將受處理基板κ 22 201216337 上有機物質附著的程度縮減至容許範圍内。 根據前述習知例，已知要預防有機物質附著於受處理基板 κ上，沖洗氣流為—項不可或缺之要件，但是，經過本發明人 等竭盡心力研究之結果，得知即使停止沖洗魏供應並停止自 裝载鎖室U)崎出氣體，仍可持續前述伽。此處持續作用 之原理應在於即使停止沖洗氣體供應並停止自裝載鎖室10内 排出氣體’沖洗氣體仍會前於裝載鎖室1G内，藉此抑制有 機物質之平均自由行程。 又，由於裝載鎖室10難以維持完全氣密狀態，故若是停 止前述排氣動作，外部氣齡因滲漏而人侵魏鎖室10内， 並導致該裝載鎖室K)内之大_力上昇，但是在取出受處理 基板K時’會因為必須使該裝載鎖室1G内之勤回復至等同 於相鄰之傳送室4G、處理室5G、6G、7G等之壓力然而，若 裝載鎖室10内之壓力上昇得太高，會_需花費時間使其降 低大氣壓力故不適用。 基此，在本實施例中，當壓力檢測器17所檢測出之裝载 鎖室10内部大力高於第丨基準壓力喊到第2基準壓力 時，則會重新開始前述排氣及沖洗氣體供應。 根據本發明人等之推論，前述第i基準壓力以設定在 10Pa〜3〇Pa之範關者為佳’又’前述第2基準壓力以設定在 15Pa〜300Pa之範圍内者為佳。 (實驗例1) 基上’在前述第1基準壓力設定為1GPa，第2基準壓力 設定為1奶’且ϋ部8〇内之最上層的受處理基板〖未受包覆 23 201216337 體90覆盖之狀態下，將該.g部收納於褒載鎖室内，並 利用氟化氫氣體、乙醇蒸氣及亞硝酸氣體之混合氣體對受處理 基板K上之二氧化矽膜進行蝕刻處理，針對處於初始狀態之 受處瑝基板K(位於匣部80内最下層之受處理基板尺)，以及在 裝載鎖室10内待命3小時之受處理基板κ(位於匣部8〇内最 上層之受處理基板Κ)，就其姓刻速率及钱刻平均性進行比較 後，得出兩者相等之結果。 又，在本實施形態中，收納於匣部8〇内之受處理基板κ 中，位於其最上層之受處理基板Κ會因為配置於其上方之包 覆體90包覆了其上面整面，因此，可藉由該包覆體9〇預防與 有機物質之接觸，即使是前述最上層之受處理基板κ，同樣可 預防有機物質附著。 如則述般，當利用氟化氫氣體、酒精(乙醇、甲醇等)蒸氣 及亞硝酸氣體之混合氣體，對受處理基板κ上之二氧化矽膜 進行蝕刻等處理時，若處理時間拉得愈長則受處理基板κ受 到有機物質污染之危險性則會愈高，但根據本實施形態之基板 處理系統1，即使在該狀況下，仍可有效地預防有機物質附著 在受處理基板κ上。 (實驗例2) 基上，如前述般，在前述第1基準壓力設定為10Pa，第2 基準壓力设疋為15Pa，且匣部80内之最上層的受處理基板κ 党包覆體90覆蓋之狀態下，將該匣部收納於裝載鎖室 内，並利用氟化氫氣體、乙醇蒸氣及亞硝酸氣體之混合氣體對 受處理基板K上之二氧化矽膜進行钱刻處理，針對處於初始 24 201216337 狀態之讀理基板K(位於£部8〇内最下層之受處理基板κ)， 以及在裝載鎖室1G畴命14小時之受處理基板κ(位練部 80内最上層之受處理基板κ)，就其働彳速率及働丨平均性進 行比較後，得出兩者相等之結果。 (實驗例3) 另外’在不以包覆體90來保護最上層之受處理基板Κ， 並進行與實施例2相同之處理的條件·f，針對處於初始狀態之 受處理基板κ以及在裝_室1G内待命M】、時之最上層受 處理基板K ’麟侧速率及侧平均_行比紐，最上層 之受處理基板κ的侧辭會比初錄態之受處理基板κ還 要晚10%，且钱刻平均性會劣化％%。 根據本#施_之基域理祕丨，即使是㈣於匡部80 内最上層之受處理基板!〇仍可纽地倾而不會使其受到有 機物質之污染’並可有效地獅㈣概部⑽崎有受處理 基板K等受到有機物質之污染。 再者’若是在降低壓力大氣τ，職鎖室1G内之設定壓 力極低時，有時-面供應沖洗氣體一面排出氣體之動作會I法 將該裝載鎖室10内之勤降低至該設定壓力，鱗當停止 沖洗氣體供應及聽動⑽，最好是先停止供應沖洗氣二y在 預定時間後才停止職，藉由在停止供鱗洗氣體之狀態 低大氣壓力’可使裝載鎖室1()内之壓力達到該設定壓力。 如上所言，在可有效地預防受處理基板κ之有機物 染的範關，設錢以停止沖洗氣體供應及排氣之時間，因 此，可降低沖洗氣體使用量、節約用電，更可達到降低製造成 25 201216337 本的效果。 以上為本發明之具體實施形態的說明’但本發明可採用之 ' 態樣並不受限於此。 例如，如第5圖所示，前述基板處理系統丨亦可採用配管 38及供氣關關39,該崎38係-端連接至位於前述沖洗 用開關閥35上游位置之前述供氣管32b、另一端連接至位於 前述排氣闕_ 28下游位置之前述職f 27者，且該供氣 用開關閥39係緊挾在該配管38間者。 ，J 口丨八机！刀運判珩述第1基準壓 力時’前述裝載鎖室控制部15會進行下列控制··在前述沖洗 氣體供應部31之運作狀態下，藉由_前述沖洗用開關閥 5:以停止將沖洗㈣供應至前述裝_室10内，並在前述 排:::6二驅動狀態下’藉由關閉前述排氣用開關閥28，以 室10内排出氣體，又，在停止排氣之同時 =====—概氣體供 =該=::::洗氣體供應至前述心 前述供氣用開_ 39 讀，翔時或是稍後關閉 再者，在具有前述構造聽管27。 洗氣體供應至前魏_ 土板處理系統1中，在停止將沖 氣時，會通過配管38將 内’並停止由裝載鎖室内排 氣體會朝其下游方向流動通J1。體供應至排氣管27，且該沖洗 如此一來’可預防有^質自排氣㈣逆流，並且當開 26 201216337 啟排氣用開關閥28重新進行排氣時，可預防該有機物質入侵 裝載鎖至10内’因此’可有效地偷錢物質附著於受處理 基板K上。 又，用以供應至停錄態下之減管27的沖洗氣體供應 量(流量)會雜於供應絲鋪室1G之供應量，其意義在於 可較以往大幅降低沖洗氣體之使用量。 再者，前述包覆體90可與受處理基板尺之形狀相同，但 不受限於此，只要是可以與受處理基板κ 一起收納於匣部8〇 内，且至少可包覆受處理基板κ之上面整面的話，使用任何 形狀皆可。 又，包覆體90不一定必須自匣部8〇獨立出來，如第6圖 所示，包覆體亦可是匣部80之頂板85，此時，頂板85則須 包覆業經收納且位於最上層之受處理基板κ的至少上面整面。 【圖式簡單說明】 第1圖係顯示本發明一種實施形態之基板處理系統俯視圖。 第2圖係第1圖之箭號示意Α_Α線方向截面圖。 第3圖係第1圖之箭號示意β-Β線方向截面圖。 第4圖係顯示本實施形態之匣部立體圖。 第5圖係顯示本發明其他實施形態之裝載鎖室部位截面圖。 第6圖係顯示本發明其他實施形態之匣部立體圖。 【主要元件符號說明】 1.. .基板處理系統 10…裝載鎖室 η·..門閥 12...排氣口 13.. ·供氣口 15…裝載鎖室控制部 27 201216337 17...壓力檢測器 20...裝載台 21...昇降驅動部 22...昇降桿 23...伸縮軟管 25...降低裝載鎖室大氣壓力裝置 26...排氣泵 27...排氣管 28...排氣用開關閥 30...沖洗氣體供應裝置 31...沖洗氣體供應部 32...供氣管 32a...歧管 32b...歧管 33...分氣器 34...通氣用開關閥 35...沖洗用開關閥 36...流量調整部 38...配管 39...供氣用開關閥 40...傳送室 41...降低傳送室大氣壓力裝置 42...排氣泵 43...排氣管 44...開關閥 45...傳送裝置 46...支撐台 47...支撐軸 48...橫桿 49…拾取臂、 50...處理室 51...門閥 52...降低處理室大氣壓力裝置 53...排氣泵 54...排氣管 55...開關閥 60...處理室 61…門閥 62...降低處理室大氣壓力裝置 63...排氣泵 64...排氣管 65...開關閥 70...處理室 71...門閥 72...降低處理室大氣壓力裝置 73...排氣泵 74...排氣管 75...開關閥 28 201216337 80.. .匣部 82.. .開口側 90.. .包覆體 B...不意前3虎 81...固持溝 85…頂板 A...示意箭號 K...受處理基板 29In this case, the position of the cymbal stage 20 may be passed through the respective processing steps κ to 20 201216337 by the lifting and lowering driving unit, and the processed substrate κ may be sequentially passed through the respective processes 0, 70, and the substrate to be processed κ Perform a series of processing. The device rut county board κ 状 敢 , , , , , , , , , , , , , , , , , , , , , , 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四This is to complete the flushing gas supply device 3 for all the processed substrates K in the storage (4) part (10), and close the flushing switch valve % and turn on the ventilation __ 34 'Jing large flushing gas supply to the lock room (7) Inside and returning the load lock chamber 10 to atmospheric pressure, and at this time, the lowering of the load lock to the large breast pressure device 25 closes the exhaust switch 阙28. The closing timing of the exhaust switching valve 28 can be synchronized with the opening operation of the above-described ventilation switching valve 34, or earlier than the opening operation. After Tian Shang's lock is restored to a large test force within 10, the unprocessed part 8 will be replaced by the unprocessed part 8 and the same processing steps will be performed. Further, in the «description processing step, when the concealing portion 8 is in the loading lock chamber 1 ,, the loading lock chamber control portion 15 performs the following operations. That is, the 'load lock chamber control unit 15 monitors the load lock detected by the pressure detector 17 to the internal money pressure, and the pressure is set to the predetermined first reference pressure 'At this time', the flushing switch valve 35 is closed and stopped. Supplying the flushing gas to the load lock to K) 'At the same time or later, the aforementioned exhaust switching valve 28' and stopping the discharge of the gas in the load lock chamber 1 ,, and at this time, the exhaust pump can be stopped at this time. 26 and the operation of the flushing gas ship Qing Yu, Ke made its driving style continue. At the same time, when the supply of flushing gas is started and the exhaust gas is stopped, when the pressure is detected 21 201216337, the atmospheric pressure inside the lock chamber is higher than the first reference pressure, and the gas is turned on and off, and the exhaust gas starts to open the self-loading surface (4) 嶋 _ _26) and re-rinse the gas for the ship _ off the valve 35 (if the flushing gas ship should be lined _ ^ = job Xiang mine) (four) new start after the material 1 fresh and the second fresh wire, repeat r / Restart the flushing gas supply and exhaust gas. The contents of the substrate processing system 1 of the present embodiment have been described in detail with reference to the contents of the substrate processing system 1 of the present embodiment, and it is known from Wei Ga that the substrate of the physical system = system 1 'when the substrate K to be processed is in the loading lock chamber K) When standing by, the flushing gas supply device 30 supplies the flushing gas into the loading lock chamber ι, because (4) the read substrate portion 8G is exposed to the flushing airflow, and the second = washing airflow prevents the organic matter from entering the button. Or, the organic substance is washed out and discharged out of the lock chamber, and the organic substance is prevented from adhering to the substrate κ by the action. In addition, in the basic state of the real state, when the atmospheric pressure in the load lock chamber 10 reaches the third reference pressure, the gas is stopped from the wire lock chamber 1 and the supply of the flushing gas is stopped. The loading lock chamber 10; when the pressure in the load lock chamber 1G reaches the second reference pressure, the above will be restarted: Chen and gas supply 'Xie Jian Shu Mingren# reading theory: If the material is supplied to the lock room When the atmospheric pressure in the load lock chamber 10 is lowered to a predetermined pressure within 10, even if the flushing gas supply is stopped and the exhaust gas is stopped, the organic substance is continuously prevented from adhering to the side of the treated button and can be treated. The degree of adhesion of the organic substance on the substrate κ 22 201216337 is reduced to the allowable range. According to the conventional example described above, it is known that it is necessary to prevent the organic substance from adhering to the substrate to be processed, and the flushing airflow is an indispensable element. However, after the inventors of the present invention have exhausted their efforts, it is known that even if the flushing is stopped, Supply and stop the self-loading lock chamber U) to exfoliate the gas, still sustaining the aforementioned gamma. The principle of the continuous action here should be that even if the supply of the flushing gas is stopped and the discharge of the gas from the load lock chamber 10 is stopped, the flushing gas is still in the load lock chamber 1G, thereby suppressing the average free path of the organic substance. Further, since it is difficult to maintain the fully airtight state of the load lock chamber 10, if the exhaust operation is stopped, the external air age is invaded by the inside of the Wei lock chamber 10 due to the leakage, and the large force in the load lock chamber K) is caused. Rising, but when the substrate K to be processed is taken out, 'there is a pressure that must be restored in the load lock chamber 1G to be equivalent to the pressure of the adjacent transfer chamber 4G, the processing chambers 5G, 6G, 7G, etc. However, if the lock chamber is loaded The pressure within 10 rises too high, and it will take time to reduce the atmospheric pressure, so it does not apply. Therefore, in the present embodiment, when the inside of the load lock chamber 10 detected by the pressure detector 17 is strongly higher than the second reference pressure and the second reference pressure is reached, the exhaust gas and the flushing gas supply are restarted. . According to the inference of the inventors of the present invention, it is preferable that the ith reference pressure is set to be 10 Pa to 3 〇 Pa, and the second reference pressure is set to be in the range of 15 Pa to 300 Pa. (Experimental Example 1) The uppermost substrate to be processed in the first reference pressure is set to 1 GPa, the second reference pressure is set to 1 milk, and the uppermost layer in the crotch portion 8 is not covered by the cover 23 201216337 body 90 In this state, the .g portion is housed in the load lock chamber, and the ruthenium dioxide film on the substrate K to be processed is etched by a mixed gas of hydrogen fluoride gas, ethanol vapor, and nitrous acid gas, and is in an initial state. The substrate K (the substrate to be processed in the lowermost layer in the crotch portion 80) and the substrate κ to be processed for 3 hours in the lock chamber 10 (the uppermost substrate to be processed in the top 8〇) After comparing the rate of the surname and the average of the money, the results of the two are equal. Further, in the present embodiment, the substrate to be processed κ stored in the uppermost portion of the substrate 8 is covered with the entire surface of the substrate 90 disposed thereon. Therefore, the coating body 9 can prevent contact with the organic substance, and even the uppermost substrate to be processed κ can prevent the adhesion of the organic substance. As described above, when the cerium oxide film on the substrate κ is etched by a mixed gas of hydrogen fluoride gas, alcohol (ethanol, methanol, etc.) vapor and nitrous acid gas, the processing time is longer. In the substrate processing system 1 of the present embodiment, the substrate processing system 1 according to the present embodiment can effectively prevent the organic substance from adhering to the substrate to be processed κ even if the substrate processing system 1 of the present embodiment is more likely to be contaminated. (Experimental Example 2) As described above, the first reference pressure is set to 10 Pa, the second reference pressure is set to 15 Pa, and the uppermost processed substrate κ party covering 90 in the crotch portion 80 is covered. In this state, the crotch portion is housed in the load lock chamber, and the ceria film on the substrate K to be processed is processed by a mixed gas of hydrogen fluoride gas, ethanol vapor, and nitrous acid gas, and is in the state of initial 24 201216337. The processing substrate K (the processing substrate κ located at the lowermost layer in the top 8 £), and the substrate κ to be processed in the lock chamber 1G for 14 hours (the uppermost processed substrate κ in the training unit 80) After comparing the rate of enthalpy and the average of 働丨, the results of the two are equal. (Experimental Example 3) In addition, the condition of the same processing as that of the second embodiment is performed in the case where the uppermost substrate is not protected by the coating body 90, and the substrate κ in the initial state is loaded and loaded. _ room 1G standby M], the uppermost layer of the treated substrate K 'the lining rate and the side average _ row ratio, the upper layer of the treated substrate κ side will be more than the initial recorded substrate κ 10% late, and the average of money will be degraded by %%. According to the basic theory of this #施_, even if it is (4) the uppermost processed substrate in the scorpion 80! 〇 can still be tilted to the ground without being contaminated by organic matter' and can effectively lion (4) General (10) The substrate K and the like to be treated are contaminated by organic substances. Furthermore, if the pressure of the atmospheric pressure τ is lowered and the set pressure in the lock chamber 1G is extremely low, the operation of discharging the gas while supplying the flushing gas may be reduced to the setting in the load lock chamber 10. Pressure, scale when stopping the flushing gas supply and listening (10), it is best to stop supplying the flushing gas first. After the predetermined time, the job is stopped. By stopping the supply of the gas in the state of the flue gas, the load lock chamber can be made. The pressure in 1() reaches the set pressure. As described above, in the case of effectively preventing the dyeing of the organic substance to be processed κ, money is set to stop the supply of the flushing gas and the time of exhausting, thereby reducing the amount of flushing gas used, saving electricity, and lowering. Made into the effect of 25 201216337. The above is a description of the specific embodiment of the present invention, but the invention is not limited thereto. For example, as shown in FIG. 5, the substrate processing system 丨 can also be provided with a pipe 38 and an air supply shutoff 39, which is connected to the aforementioned air supply pipe 32b located at a position upstream of the flushing on-off valve 35, and another One end is connected to the aforementioned position f 27 located downstream of the exhaust port _ 28, and the air supply switching valve 39 is immediately adjacent to the pipe 38. , J mouth 丨 eight machine! When the first reference pressure is described in the knives, the load lock chamber control unit 15 performs the following control. In the operating state of the flushing gas supply unit 31, the flushing switch valve 5 is used to stop flushing. (4) supplying to the above-mentioned device 10, and in the above-mentioned row:::6 driving state, 'by closing the aforementioned exhausting on-off valve 28, the gas is exhausted in the chamber 10, and at the same time, the exhaust is stopped. ====—General gas supply=This =:::: The supply of the purge gas to the aforementioned heart is read by the above-mentioned gas supply, and is closed or later, and has the above-described structure. The purge gas is supplied to the pre-Wei-soil treatment system 1, and when the flushing is stopped, the gas is discharged through the pipe 38 and the gas discharged from the load lock chamber is stopped to flow J1 in the downstream direction. The body is supplied to the exhaust pipe 27, and the flushing is such as to prevent the self-exhaust (four) countercurrent, and prevent the organic matter from invading when the opening and closing valve 28 is re-exhausted. Loading the lock into the 10th 'so' can effectively steal the money attached to the substrate K to be processed. Further, the supply amount (flow rate) of the flushing gas supplied to the reduction pipe 27 in the stopped state may be mixed with the supply amount of the supply wire laying chamber 1G, which means that the amount of flushing gas used can be greatly reduced as compared with the prior art. Further, the coating body 90 may have the same shape as the substrate to be processed, but is not limited thereto, and may be housed in the crotch portion 8 与 together with the substrate to be processed κ, and at least coat the substrate to be processed. If you use the entire surface of κ, you can use any shape. Moreover, the covering body 90 does not necessarily have to be separated from the crotch portion 8〇. As shown in Fig. 6, the covering body may also be the top plate 85 of the crotch portion 80. At this time, the top plate 85 is required to be wrapped and placed at the most At least the entire upper surface of the upper substrate to be processed κ. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a substrate processing system according to an embodiment of the present invention. Fig. 2 is a cross-sectional view of the arrow of Fig. 1 showing the direction of the Α_Α line. Fig. 3 is a cross-sectional view showing the direction of the β-Β line by the arrow of Fig. 1. Fig. 4 is a perspective view showing the crotch portion of the embodiment. Fig. 5 is a cross-sectional view showing a portion of a load lock chamber according to another embodiment of the present invention. Fig. 6 is a perspective view showing a crotch portion of another embodiment of the present invention. [Description of main component symbols] 1.. Substrate processing system 10...Load lock chamber η·..Door valve 12...Exhaust port 13: Air supply port 15...Load lock chamber control unit 27 201216337 17... Pressure detector 20...loading table 21...lifting drive unit 22...lifting rod 23...retractable hose 25...reducing load lock chamber atmospheric pressure device 26...exhaust pump 27... Exhaust pipe 28...Exhaust gas switching valve 30... Flush gas supply device 31... Flush gas supply unit 32... Air supply pipe 32a... Manifold 32b... Manifold 33.. Deaerator 34... Ventilation on-off valve 35... Flushing on-off valve 36... Flow rate adjustment unit 38: Piping 39... Air supply on-off valve 40... Transfer chamber 41.. Lowering the transfer chamber atmospheric pressure device 42...Exhaust pump 43...Exhaust pipe 44...Switch valve 45...Transport device 46...Support table 47...Support shaft 48...Horizontal Rod 49... pickup arm, 50...processing chamber 51...gate valve 52...reduction chamber atmospheric pressure device 53...exhaust pump 54...exhaust tube 55...switch valve 60.. Process chamber 61...gate valve 62...reduction chamber atmospheric pressure device 63...exhaust pump 64...exhaust pipe 65...switch valve 70...processing chamber 71. .. Gate valve 72...Reducing process chamber Atmospheric pressure device 73...Exhaust pump 74...Exhaust pipe 75...Switch valve 28 201216337 80.. .匣82.. .Open side 90.. Covering body B... Unintentional front 3 Tiger 81... Holding groove 85... Top plate A... Schematic arrow K... Treated substrate 29