WO2012002045A1 - Dispositif à semi-conducteurs et procédé de fabrication associé, substrat intégré, module optique, et dispositif de communication optique - Google Patents

Dispositif à semi-conducteurs et procédé de fabrication associé, substrat intégré, module optique, et dispositif de communication optique Download PDF

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WO2012002045A1
WO2012002045A1 PCT/JP2011/060909 JP2011060909W WO2012002045A1 WO 2012002045 A1 WO2012002045 A1 WO 2012002045A1 JP 2011060909 W JP2011060909 W JP 2011060909W WO 2012002045 A1 WO2012002045 A1 WO 2012002045A1
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layer
semiconductor
substrate
bonding
semiconductor device
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PCT/JP2011/060909
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English (en)
Japanese (ja)
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西研一
影山健生
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株式会社Ｑｄレーザ
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0236—Fixing laser chips on mounts using an adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Definitions

  • the present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly, a semiconductor device for bonding a surface of a semiconductor layer made of a group III-V compound semiconductor not containing In and a Si surface of a substrate, a method for manufacturing the semiconductor device, and the semiconductor
  • the present invention relates to an integrated substrate including the device, an optical module, and an optical communication device.
  • Non-Patent Document 1 discloses a semiconductor device having a structure in which an InP (indium phosphide) light emitting element is bonded to the surface of an SOI substrate.
  • light emitting elements include light emitting elements made of III-V group compound semiconductors that do not contain In (indium), such as GaAs (gallium arsenide) light emitting elements.
  • III-V group compound semiconductors that do not contain In (indium), such as GaAs (gallium arsenide) light emitting elements.
  • GaAs gallium arsenide
  • the semiconductor layer made of a group III-V compound semiconductor not containing In and the Si surface of the substrate are bonded, the semiconductor layer made of a group III-V compound semiconductor not containing In is peeled off from the substrate. There is a problem that will occur.
  • the present invention has been made in view of the above problems, and has a structure in which the surface of a semiconductor layer made of a group III-V compound semiconductor containing no In and the Si surface of the substrate are joined together. It is an object of the present invention to provide a semiconductor device capable of suppressing peeling between a semiconductor layer made of a compound semiconductor and a substrate, a manufacturing method thereof, an integrated substrate including the semiconductor device, an optical module, and an optical communication device.
  • the present invention includes a step of forming a bonding layer containing In on a surface of a semiconductor layer made of a group III-V compound semiconductor not containing In, and the surface of the semiconductor layer is bonded to the Si of the substrate via the bonding layer.
  • a method of manufacturing a semiconductor device comprising: bonding to a surface. According to the present invention, it is possible to suppress the peeling of the III-V group compound semiconductor layer not containing In and the substrate.
  • the semiconductor layer is an outermost semiconductor layer of a laminated semiconductor layer including an active layer that oscillates light and is formed on a main surface of a group III-V compound semiconductor substrate, and the substrate includes:
  • the active layer may have a waveguide for guiding light oscillated. According to this configuration, light oscillated by the active layer can be guided by the waveguide provided on the substrate.
  • the step of forming the bonding layer has a band gap energy larger than the energy of light oscillated by the active layer after bonding the surface of the semiconductor layer and the Si surface of the substrate.
  • the bonding layer can be formed. According to this configuration, since light oscillated by the active layer can be suppressed from being absorbed by the bonding layer, light having high light intensity can be guided through the waveguide provided on the substrate.
  • the step of forming the bonding layer may be configured to form the bonding layer including a plurality of quantum dots that are III-V group compound semiconductors containing In.
  • the bonding layer is larger than the energy of light oscillated by the active layer. Having a band gap energy can be easily realized.
  • the step of forming the bonding layer may be configured to form the bonding layer composed of a plurality of InAs quantum dots.
  • the step of forming the bonding layer is performed after bonding the surface of the semiconductor layer and the Si surface of the substrate when the wavelength of light oscillated by the active layer is in the 1.3 ⁇ m band.
  • the bonding layer can be formed by supplying an amount of InAs such that the bonding layer has a thickness of 5 atomic layers or less. According to this configuration, it is possible to obtain a bonding layer in which absorption of light having a wavelength in the 1.3 ⁇ m band in which the active layer oscillates is suppressed.
  • the present invention relates to a III-V group compound semiconductor that is the outermost layer of a laminated semiconductor layer including an active layer that oscillates light and is provided on the main surface of a III-V group compound semiconductor substrate, and does not contain In.
  • light oscillated by the active layer can be suppressed from being absorbed by the bonding layer, light with high light intensity can be guided through the waveguide provided on the substrate.
  • the bonding layer may be an InAs thin film layer, the wavelength of light oscillated by the active layer is in a 1.3 ⁇ m band, and the thickness of the bonding layer may be 5 atomic layers or less. . According to this structure, it can suppress that a joining layer absorbs the light of the wavelength of 1.3 micrometer band oscillated by the active layer.
  • the present invention is an integrated substrate including the semiconductor device.
  • the present invention also provides an optical module including the semiconductor device.
  • the present invention is an optical communication device including the semiconductor device.
  • the group III-V compound semiconductor layer not containing In is peeled off from the substrate. This can be suppressed.
  • FIG. 1 is an example of a schematic cross-sectional view of a semiconductor device according to the first embodiment.
  • FIG. 2 is an example of a schematic cross-sectional view showing a dot layer for one active layer.
  • FIG. 3 is an example of an energy band diagram from the p-type GaAs substrate to the Si layer in the semiconductor device according to the first embodiment.
  • FIG. 4A to FIG. 4C are examples of schematic cross-sectional views illustrating a method for manufacturing a semiconductor device according to the first embodiment.
  • FIG. 5A is an example of an energy band diagram in a structure in which an InAs thin film layer is sandwiched between GaAs layers
  • FIG. 5B is a diagram showing a calculation result of band gap energy with respect to the thickness of the InAs thin film layer. It is.
  • FIG. 6 is an example of a schematic perspective view of an integrated substrate according to the second embodiment.
  • FIG. 7 is an example of a block diagram of an optical module according to the third embodiment.
  • FIG. 8A is an example of a block diagram of an optical communication apparatus according to the fourth embodiment, and
  • FIG. 8B is an example of a block diagram of an optical communication system including the optical communication apparatus according to the fourth embodiment. is there.
  • the Si surface of the SOI substrate and the group III-V compound semiconductor layer surface not containing In must be joined. become.
  • a GaAs light emitting element is used as an example of a light emitting element made of a III-V group compound semiconductor not containing In
  • the Si surface of the SOI substrate and the GaAs semiconductor layer surface are bonded.
  • Si atoms contained in the Si surface and Ga atoms contained in the GaAs semiconductor layer are combined.
  • FIG. 1 is an example of a schematic cross-sectional view of a semiconductor device according to the first embodiment.
  • the semiconductor device 100 according to the first embodiment has a structure in which a light emitting element 30 is bonded to the surface of a substrate 10.
  • the substrate 10 is, for example, an SOI (Silicon on Insulator) substrate, and has a structure in which an embedded SiO 2 (silicon oxide) film 14 and a Si thin film layer 16 are sequentially formed on a Si support substrate 12. That is, the Si surface of the Si thin film layer 16 is exposed on the surface of the substrate 10.
  • SOI Silicon on Insulator
  • the Si thin film layer 16 is formed with a cavity 18 that is removed until the embedded SiO 2 film 14 is exposed, and a part of the Si thin film layer 16 is sandwiched between the cavity 18. That is, a part of the Si thin film layer 16 is surrounded by the cavity 18 and the embedded SiO 2 film 14.
  • Si has a larger refractive index than that of SiO 2 or air with respect to light wavelengths in the 1.3 ⁇ m band and 1.55 ⁇ m band that are generally used for optical communication. Therefore, a part of the Si thin film layer 16 surrounded by the cavity 18 and the buried SiO 2 film 14 can be used as the waveguide 20 having a function of guiding light.
  • the light emitting element 30 is, for example, a GaAs light emitting element having a quantum dot active layer that oscillates light having a wavelength of 1.3 ⁇ m band.
  • the light emitting element 30 includes, for example, a lower clad layer 34 made of p-type AlGaAs, a spacer layer 36 made of undoped GaAs, an active layer 38 having a plurality of quantum dots, and a spacer made of undoped GaAs on the main surface of a p-type GaAs substrate 32.
  • the structure includes a laminated semiconductor layer 46 in which a layer 40, an upper cladding layer 42 made of n-type AlGaAs, and a contact layer 44 made of n-type GaAs are sequentially laminated.
  • the outermost layer of the laminated semiconductor layer 46 is the contact layer 44.
  • a p-electrode 48 is formed on the surface opposite to the main surface of the p-type GaAs substrate 32.
  • An n electrode 50 is formed in contact with the contact layer 44.
  • FIG. 2 is an example of a schematic cross-sectional view showing one dot layer 52 of the active layer 38.
  • the quantum dots 54 are formed of InAs.
  • An InGaAs layer 56 is formed between the quantum dots 54.
  • An undoped GaAs layer 58 is formed so as to cover the quantum dots 54 and the InGaAs layer 56.
  • a p-type GaAs layer 60 and an undoped GaAs layer 62 are sequentially formed on the surface of the undoped GaAs layer 58.
  • the undoped GaAs layer 58, the p-type GaAs layer 60, and the undoped GaAs layer 62 constitute a barrier layer 64.
  • a bonding layer 22 made of, for example, an InAs thin film layer and having a thickness of two atomic layers is interposed between the substrate 10 and the light emitting element 30. That is, the bonding layer 22 is provided between the Si thin film layer 16 and the contact layer 44.
  • the Si thin film layer 16 and the bonding layer 22 are bonded to each other by Si atoms having a strong bond strength. As a result, the Si thin film layer 16 and the contact layer 44 do not easily peel off.
  • the semiconductor device 100 according to Example 1 has a structure in which a light emitting element 30 is bonded to the surface of a substrate 10 as shown in FIG. Therefore, the light oscillated in the active layer 38 propagates to the substrate 10 and can be guided in the waveguide 20 provided on the substrate 10. Therefore, the semiconductor device 100 can be used as an optical circuit, and can be used as, for example, an optical modulator, multiplexer, or duplexer.
  • FIG. 3 is an example of an energy band diagram from the p-type GaAs substrate 32 to the Si thin film layer 16 in the semiconductor device 100 according to the first embodiment.
  • the band gap energy Ega of the bonding layer 22 made of InAs is larger than the band gap energy Egb of the active layer 38.
  • the light oscillated by the active layer 38 can be suppressed from being absorbed by the bonding layer 22. That is, the light oscillated by the active layer 38 is hardly absorbed by the bonding layer 22 but propagates to the substrate 10 and can be guided in the waveguide 20.
  • FIG. 4A to FIG. 4C are examples of schematic cross-sectional views illustrating a method for manufacturing the semiconductor device 100 according to the first embodiment.
  • 4A first, on the main surface of the p-type GaAs substrate 32, for example, an MBE (Molecular-Beam-Epitaxy) method is used to form a lower cladding layer 34, a spacer layer 36, and an active layer having a plurality of quantum dots. 38, the spacer layer 40, the upper cladding layer 42, and the contact layer 44 are sequentially laminated to form a laminated semiconductor layer 46.
  • MBE Molecular-Beam-Epitaxy
  • the bonding layer 22 composed of a plurality of InAs quantum dots is formed on the surface of the contact layer 44 which is the outermost layer of the laminated semiconductor layer 46.
  • the bonding layer 22 is formed such that, after bonding the surface of the contact layer 44 and the Si surface of the Si thin film layer 16, the bonding layer 22 has a band gap energy larger than the energy of light oscillated by the active layer 38.
  • the bonding layer 22 is formed by supplying, for example, an amount of InAs corresponding to the growth of a 2.5 molecular layer thickness.
  • the bonding layer 22 made of InAs quantum dots having a height of 10 nm is formed.
  • a substrate 10 having a waveguide 20 is prepared.
  • the waveguide 20 is formed by selectively etching the Si thin film layer 16 by, for example, a dry etching method. Then, after cleaning the Si surface of the Si thin film layer 16 using, for example, hydrofluoric acid, a pressure of 10 kPa is applied at a temperature of 250 ° C., for example, and the surface of the contact layer 44 and the Si surface of the Si thin film layer 16 are Are bonded with the bonding layer 22 interposed therebetween. As a result, the bonding layer 22 that is a quantum dot becomes, for example, a thin film layer of InAs having a thickness of two atomic layers.
  • an amount of InAs corresponding to the growth of 2.5 molecular layer thickness is supplied to form the bonding layer 22 made of InAs quantum dots, whereas the surface of the contact layer 44 and Si
  • the reason why the bonding layer 22 after bonding the Si surface of the thin film layer 16 is an InAs thin film layer having a thickness of two atomic layers is that In diffuses into the contact layer 44 and the like.
  • the p-type GaAs substrate 32, the lower cladding layer 34, the spacer layer 36, the active layer 38, the spacer layer 40, and the like are formed by dry etching, for example, so that a part of the contact layer 44 is exposed.
  • the upper cladding layer 42 is selectively etched. Thereafter, the p electrode 48 and the n electrode 50 are formed. Thereby, the semiconductor device 100 according to the first embodiment is completed.
  • the bonding layer 22 made of a plurality of InAs quantum dots is formed on the surface of the contact layer 44 made of an n-type GaAs layer. Then, as shown in FIG. 4B, the surface of the contact layer 44 is bonded to the Si surface of the Si thin film layer 16 via the bonding layer 22.
  • the bonding strength between Si atoms and Ga atoms is weak, and therefore, they are easily peeled off.
  • the bonding strength between Si atoms and In atoms is strong by bonding the GaAs surface of the contact layer 44 and the Si surface of the Si thin film layer 16 through the InAs bonding layer 22. For this reason, the bonding force between the contact layer 44 and the Si thin film layer 16 is increased, and peeling is less likely to occur. That is, the contact layer 44 and the substrate 10 can be prevented from being peeled off by forming a bond structure of Si atoms and In atoms having high bond strength.
  • the contact layer 44 which is the outermost layer of the laminated semiconductor layer 46 including the active layer 38 that oscillates light formed on the main surface of the p-type GaAs substrate 32, is the contact layer 44.
  • the substrate is bonded to the surface of the substrate 10 having the waveguide 20 for guiding light through the bonding layer 22 formed on the surface of the substrate.
  • the bonding layer 22 is light that the active layer 38 oscillates after the surface of the contact layer 44 and the Si surface of the Si thin film layer 16 are bonded.
  • the bonding layer 22 have a band gap larger than the energy of. As a result, the light oscillated by the active layer 38 can be suppressed from being absorbed by the bonding layer 22, and light having high light intensity can be guided through the waveguide 20 provided in the substrate 10. .
  • FIG. 5A is an example of an energy band diagram in the case of an InAs quantum well structure in which an InAs thin film layer is sandwiched between GaAs layers.
  • FIG. 5B is a diagram showing a calculation result of the band gap energy at the ground level with respect to the thickness of the InAs thin film layer in the InAs quantum well structure of FIG. 5A, and the horizontal axis represents the InAs thin film layer.
  • the thickness is represented by atomic layer thickness, and the vertical axis represents the band gap energy of the InAs thin film layer.
  • the electrons confined in the quantum well are quantized, the energy level thereof is increased, and the effective band gap energy is increased.
  • the band gap energy at the ground level increases as the thickness of the InAs thin film layer decreases.
  • the larger the band gap energy the narrower the wavelength range of the light absorbed by the InAs thin film layer. From the viewpoint of suppressing the light absorption in the InAs thin film layer, it is preferable that the thickness of the InAs thin film layer is thinner.
  • FIG. 5B shows the band gap energy with respect to the thickness of the InAs thin film layer in the InAs quantum well structure in which the InAs thin film layer is sandwiched between the GaAs layers.
  • FIG. Even if the InAs quantum well structure in which the InAs thin film layer (bonding layer 22) is sandwiched between the GaAs layer (contact layer 44) and the Si layer (Si thin film layer 16), the same relationship as in FIG. Can be obtained.
  • the bonding layer 22 is a thin InAs thin film layer. Some cases are preferred. For example, when the active layer 38 oscillates light having a wavelength of 1.3 ⁇ m band used for general optical communication, the energy of light having a wavelength of 1.3 ⁇ m band is about 0.97 eV.
  • the thickness of the bonding layer 22 which is an InAs thin film layer is preferably 5 atomic layer thickness or less, more preferably 3 atomic layer thickness or less, and 2 atomic layer thickness or less. Is more preferable.
  • the wavelength of light oscillated by the active layer 38 is in the 1.3 ⁇ m band
  • the bonding layer 22 described with reference to FIG. are preferably supplied to form the bonding layer 22 by supplying InAs in an amount such that the thickness of the bonding layer 22 is 5 atomic layers or less.
  • the case where the bonding layer 22 is formed by supplying InAs is more preferable, and the case where the bonding layer 22 is formed by supplying an amount of InAs that is less than the thickness of two atomic layers is more preferable.
  • the bonding layer 22 formed on the surface of the contact layer 44 is preferably a plurality of InAs quantum dots.
  • the surface of the contact layer 44 and the Si surface of the Si thin film layer 16 are adjusted by adjusting the temperature and pressure when the surface of the contact layer 44 is bonded to the Si surface of the Si thin film layer 16.
  • the bonding layer 22 can be easily realized as a thin InAs thin film layer having a band gap energy larger than the energy of light oscillated by the active layer 38.
  • the bonding layer 22 formed on the surface of the contact layer 44 has been described as an example of a layer made of InAs quantum dots.
  • an InAs thin film layer, an InGaAs thin film layer, or the like is used.
  • a thin film layer of a group III-V compound semiconductor containing In may also be used. Even in this case, when the surface of the contact layer 44 and the Si surface of the Si thin film layer 16 are bonded, the contact layer 44 and the Si thin film layer 16 can be prevented from being peeled off, and the active layer 38 can oscillate. Absorption can also be suppressed.
  • the bonding layer 22 formed on the surface of the contact layer 44 is a thin film layer such as InAs or InGaAs, the surface of the thin film layer is uneven, and it may be difficult to bond the contact layer 44 and the Si thin film layer 16. is there. Therefore, it is preferable that the bonding layer 22 formed on the surface of the contact layer 44 is composed of a plurality of quantum dots of III-V group compound semiconductor containing In such as InAs or InGaAs.
  • the active layer 38 has been shown as an example in which light having a wavelength of 1.3 ⁇ m band is oscillated.
  • the active layer 38 has a low absorption coefficient in Si.
  • light in other wavelength bands may be oscillated.
  • the active layer 38 oscillates light having a wavelength of 1.55 ⁇ m, in order to suppress the light having a wavelength of 1.55 ⁇ m that oscillates in the active layer 38 from being absorbed by the bonding layer 22, 1.55 ⁇ m. Since the energy of the light having the band wavelength is about 0.8 eV, the thickness of the bonding layer 22 is preferably 7 atomic layers or less, as shown in FIG. Is more preferable, and it is further more preferable that it is 3 atomic layer thickness or less.
  • the active layer 38 has a quantum dot structure has been described as an example, but may be a quantum well structure, for example.
  • the characteristics deteriorate when exposed to a temperature of 450 ° C., for example.
  • the bonding layer 22 containing In is interposed as in the first embodiment. Accordingly, since the melting point of In is relatively low, the contact layer 44 and the Si thin film layer 16 can be bonded with a strong force even when a low temperature is used. Suppression can also be realized.
  • the light emitting element 30 is a GaAs light emitting element is shown as an example, but is not limited thereto.
  • a light emitting element having another structure may be used as long as it is a light emitting element made of a group III-V compound semiconductor not containing In. Even in this case, by applying the invention of Example 1, it is possible to prevent the semiconductor layer made of a III-V group compound semiconductor not containing In from peeling off from the substrate.
  • the present invention is not limited to this. If the surface of the semiconductor layer made of a group III-V compound semiconductor not containing In is bonded to the Si surface of the substrate, the invention according to Example 1 can be applied to the group III-V not containing In. Peeling between the semiconductor layer made of a compound semiconductor and the substrate can be suppressed.
  • Example 2 is an example of an integrated substrate including the semiconductor device 100 according to Example 1.
  • FIG. FIG. 6 is an example of a schematic perspective view of an integrated substrate according to the second embodiment. As shown in FIG. 6, an electronic circuit (not shown) including Si transistors is integrated on the integrated substrate 200 according to the second embodiment, and the semiconductor device 100 according to the first embodiment is further integrated. As a result, the optical circuit formed by the semiconductor device 100 and the electronic circuit formed by a transistor are merged.
  • Example 3 is an example of an optical module including the semiconductor device 100 according to Example 1.
  • FIG. FIG. 7 is an example of a block diagram of an optical module according to the third embodiment.
  • the optical module 300 according to the third embodiment includes the semiconductor device 100 according to the first embodiment, the optical waveguide unit 310, and the light modulation unit 320.
  • Light emitted from the semiconductor device 100 is guided to the light modulation unit 320 through the optical waveguide unit 310.
  • the light modulator 320 modulates incident light.
  • the modulated light is incident on the single mode fiber optically coupled by the optical fiber coupling unit 330 through the optical waveguide unit 310 and is transmitted through the single mode fiber.
  • Example 4 is an example of an optical communication apparatus including the optical module 300 according to Example 3.
  • FIG. 8A is an example of a block diagram of an optical communication apparatus according to the fourth embodiment.
  • the optical communication device 400 according to the fourth embodiment includes the optical module 300 according to the third embodiment that functions as a transmission unit, a reception unit 410, and a control unit 420.
  • the optical module 300 converts the transmission data signal from the control unit 420 into light and emits it.
  • the emitted light enters the single mode fiber and is transmitted through the single mode fiber.
  • the receiving unit 410 receives light transmitted through the single mode fiber and outputs the received data to the control unit 420 as received data.
  • FIG. 8B is an example of a block diagram of an optical communication system including the optical communication apparatus 400 according to the fourth embodiment.
  • the optical communication system 500 includes a first optical communication device 400a and a second optical communication device 400b.
  • the first optical communication device 400a includes an optical module 300a, a receiving unit 410a, and a control unit 420a.
  • the second optical communication device 400b includes an optical module 300b, a receiving unit 410b, and a control unit 420b.
  • the optical module 300a of the first optical communication apparatus 400a converts the transmission data signal from the control unit 420a into light and emits the light
  • the emitted light is transmitted through the single mode fiber 510
  • the second light Light is received by the receiving unit 410b of the communication device 400b.
  • reception data is output to the control unit 420b.
  • the optical module 300b of the second optical communication device 400b converts the transmission data signal from the control unit 420b into light and emits it
  • the emitted light is transmitted through the single mode fiber 510
  • the first Light is received by the receiving unit 410a of the optical communication device 400a.
  • reception data is output to the control unit 420a.
  • data communication can be performed between the first optical communication device 400a and the second optical communication device 400b.
  • the optical communication system 500 that performs data communication using the single mode fiber 510 between the first optical communication device 400a and the second optical communication device 400b is an FTTH (Fiber To The Home) and an optical communication backbone network are preferable.
  • the first optical communication device 400a and the second optical communication device 400b may perform data communication by receiving light emitted into the space without using the single mode fiber 510.
  • the first optical communication device 400a and the second optical communication device 400b can be personal computers, for example, and one of the first optical communication device 400a and the second optical communication device 400b is A personal computer may be used, and the other may be an electronic device such as a mobile phone, a digital camera, or a video camera, or a projector.

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Abstract

L'invention concerne un procédé de fabrication de dispositif à semi-conducteurs qui comporte : une étape de formation d'une couche de liaison (22) constituée d'une pluralité de points quantiques de InAs à la surface d'une couche de contact (44) qui est la couche la plus en surface d'une couche semi-conductrice stratifiée (46) contenant une couche active (38) dans laquelle oscille une lumière formée sur la face principale d'un substrat de GaAs (32), et laquelle couche de contact (44) est constituée de GaAs qui est un semi-conducteur composé des groupes III-V exempt de In; et une étape de liaison de la surface de la couche de contact (44) sur une face de Si d'une couche mince de Si (16) contenue dans un substrat (10), par l'intermédiaire de la couche de liaison (22).
PCT/JP2011/060909 2010-07-01 2011-05-12 Dispositif à semi-conducteurs et procédé de fabrication associé, substrat intégré, module optique, et dispositif de communication optique WO2012002045A1 (fr)

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JP2010-151244 2010-07-01
JP2010151244A JP2012014002A (ja) 2010-07-01 2010-07-01 半導体装置およびその製造方法、集積基板、光モジュール、光通信装置

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WO2012002045A1 true WO2012002045A1 (fr) 2012-01-05

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