WO2011152973A1 - Texturation de substrats en silicium multicristallin - Google Patents

Texturation de substrats en silicium multicristallin Download PDF

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Publication number
WO2011152973A1
WO2011152973A1 PCT/US2011/036163 US2011036163W WO2011152973A1 WO 2011152973 A1 WO2011152973 A1 WO 2011152973A1 US 2011036163 W US2011036163 W US 2011036163W WO 2011152973 A1 WO2011152973 A1 WO 2011152973A1
Authority
WO
WIPO (PCT)
Prior art keywords
etching
texturing
crystalline silicon
silicon
solution
Prior art date
Application number
PCT/US2011/036163
Other languages
English (en)
Inventor
Curtis Dove
Baljit Singh
Greg Bauer
Jackson Hu
Mehdi Balooch
Original Assignee
Asia Union Electronic Chemical Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asia Union Electronic Chemical Corporation filed Critical Asia Union Electronic Chemical Corporation
Publication of WO2011152973A1 publication Critical patent/WO2011152973A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to improves chemistries and methods for texturing of multi-crystalline silicon substrates, particularly for use as solar cells or photovoltaic cells.
  • ARC anti-reflective coating
  • silicon oxide silicon oxide
  • silicon nitride silicon dioxide
  • titanium dioxide an anti-reflective coating
  • Another method of reducing reflectance and improving device efficiency is to texture the silicon wafer surface using a wet-chemical etch to from small structures, often having a pyramidal shape. These structures provide higher levels of light trapping due to multiple scattering. Based on geometrical optics, the texturing should be on a scale equal to or greater than optical wavelengths of the incident light to cause the incident light to reflect multiple times and thereby enhance the amount of absorption.
  • the texturing process is generally carried out using a mixture of potassium hydroxide (KOH) or sodium hydroxide (NaOH) and isopropyl alcohol (IP A) in deionized (DI) water as the etchant.
  • KOH potassium hydroxide
  • NaOH sodium hydroxide
  • IP A isopropyl alcohol
  • DI deionized
  • alkaline etch solutions are not generally useful for the etching of multi-crystalline silicon substrates. This is because the etch rate for silicon using alkaline solutions depends strongly on the orientation of the crystal faces exposed to the etching solution. For example, the alkaline etch rate of a Si (111) orientation is one to two orders of magnitude smaller than that of other orientations, so that when the substrate is a (100) single crystalline wafer, the resulting structures appear as four- sided pyramids having (111) orientation sidewalls. This is not true for multi- crystalline silicon substrates because the orientation varies from grain to grain within the substrate and adequate reduction of reflectance can not be easily obtained with alkaline etching.
  • the present invention provides chemicals and methods for texturing of multi- crystalline silicon substrates, particularly for use as solar cells or photovoltaic devices.
  • the solutions of the present invention provide more consistent and uniform texturing over the entire life of the solution, with a resultant decrease in the number of discarded wafers and therefore increased reliability and yield at lower cost.
  • the present invention relates to improved chemical solutions for texturing of multi-crystalline silicon substrates, particularly for use as solar cells or photovoltaic devices.
  • the solutions of the present invention provide more consistent and uniform texturing over the entire life of the solution.
  • Si containing ions are made part of the etching solution prior to first use to improve the isotropic etch that creates the texturing of multi-crystalline silicon.
  • the present invention provides a higher concentration of Si containing ions in the fresh etching solution by dissolving silicon in HF/HN0 3 .
  • hexafluorosilicate acid may be added to the HF/HNO3 to increase stability and consistency.
  • the concentration of silicon is maintained within a range of 4 to 30 g 1 of etch solution.
  • the effects of dissolving silicon into the etching solution for multi- crystalline silicon substrates according to the present invention are improved uniformity and consistency. In particular, superior results are achieved over the use of etching solutions that do not have the dissolved silicon.
  • the etching solutions of the present invention provide more consistent and uniform texturing of multi - crystalline silicon substrates over the entire life of the etching solution, resulting in fewer discarded wafers. Therefore, increases in reliability and yield and a lower cost are obtained by the present invention.
  • the structures formed using the etching solutions of the present invention are uniform and consistent with the textured substrates formed being particularly useful for solar cells and photovoltaic devices.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne des solutions de gravure et de texturation destinées à graver et à texturer des substrats en silicium multicristallin, destinés en particulier à être utilisés comme photopiles ou dispositifs photovoltaïques. Les solutions de la présente invention fournissent une texturation plus stable et uniforme pendant toute la durée de vie de la solution, ce qui entraîne moins de rejets de tranche, une fiabilité et un rendement accrus et des coûts moins élevés. Du silicium est dissous dans les solutions de gravure HF/HN03/H20.
PCT/US2011/036163 2010-06-01 2011-05-12 Texturation de substrats en silicium multicristallin WO2011152973A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35012510P 2010-06-01 2010-06-01
US61/350,125 2010-06-01

Publications (1)

Publication Number Publication Date
WO2011152973A1 true WO2011152973A1 (fr) 2011-12-08

Family

ID=45067023

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/036163 WO2011152973A1 (fr) 2010-06-01 2011-05-12 Texturation de substrats en silicium multicristallin

Country Status (2)

Country Link
TW (1) TW201214548A (fr)
WO (1) WO2011152973A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130078750A1 (en) * 2010-08-02 2013-03-28 Gwangju Institute Of Science And Technology Fabricating method of nano structure for antireflection and fabricating method of photo device integrated with antireflection nano structure
CN109853036A (zh) * 2019-03-05 2019-06-07 常州工程职业技术学院 一种金刚线切割多晶硅片的制绒方法
CN114267751A (zh) * 2021-12-22 2022-04-01 晋能清洁能源科技股份公司 用于太阳能电池的多晶硅片湿法制绒方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060138539A1 (en) * 2004-12-23 2006-06-29 Siltronic Ag Process for treating a semiconductor wafer with a gaseous medium, and semiconductor wafer treated by this process
US20080053815A1 (en) * 2006-08-31 2008-03-06 Wacker Chemie Ag Method for processing an etching mixture which is formed during the production of highly pure silicon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060138539A1 (en) * 2004-12-23 2006-06-29 Siltronic Ag Process for treating a semiconductor wafer with a gaseous medium, and semiconductor wafer treated by this process
US20080053815A1 (en) * 2006-08-31 2008-03-06 Wacker Chemie Ag Method for processing an etching mixture which is formed during the production of highly pure silicon

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
STEINERT ET AL.: "Study on the Mechanism of Silicon Etching in HN03-Rich HF/HNO3 Mixtures.", JOURNAL OF PHYSICAL CHEMISTRY, C, vol. 111, no. 5, 12 January 2007 (2007-01-12), pages 2133 - 2140 *
WEINREICH ET AL.: "The effect of H2SiF6 on the surface morphology of textured multi-crystalline silicon.", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 21, 24 July 2006 (2006-07-24), pages 1278 - 1286 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130078750A1 (en) * 2010-08-02 2013-03-28 Gwangju Institute Of Science And Technology Fabricating method of nano structure for antireflection and fabricating method of photo device integrated with antireflection nano structure
US9123832B2 (en) * 2010-08-02 2015-09-01 Gwangju Institute Of Science And Technology Fabricating method of nano structure for antireflection and fabricating method of photo device integrated with antireflection nano structure
CN109853036A (zh) * 2019-03-05 2019-06-07 常州工程职业技术学院 一种金刚线切割多晶硅片的制绒方法
CN114267751A (zh) * 2021-12-22 2022-04-01 晋能清洁能源科技股份公司 用于太阳能电池的多晶硅片湿法制绒方法

Also Published As

Publication number Publication date
TW201214548A (en) 2012-04-01

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