WO2011150397A3 - Traitement laser pour fabrication de cellules solaires en silicium cristallin mince à efficacité élevée - Google Patents

Traitement laser pour fabrication de cellules solaires en silicium cristallin mince à efficacité élevée Download PDF

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Publication number
WO2011150397A3
WO2011150397A3 PCT/US2011/038444 US2011038444W WO2011150397A3 WO 2011150397 A3 WO2011150397 A3 WO 2011150397A3 US 2011038444 W US2011038444 W US 2011038444W WO 2011150397 A3 WO2011150397 A3 WO 2011150397A3
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WO
WIPO (PCT)
Prior art keywords
laser processing
crystalline silicon
thin crystalline
solar cell
silicon solar
Prior art date
Application number
PCT/US2011/038444
Other languages
English (en)
Other versions
WO2011150397A2 (fr
Inventor
Virendra V. Rana
Jian Jun Liang
Pranav Anbalagan
Mehrdad M. Moslehi
Original Assignee
Solexel, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel, Inc. filed Critical Solexel, Inc.
Priority to KR1020127033876A priority Critical patent/KR101289787B1/ko
Priority to EP11787543.5A priority patent/EP2577750A4/fr
Publication of WO2011150397A2 publication Critical patent/WO2011150397A2/fr
Publication of WO2011150397A3 publication Critical patent/WO2011150397A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic material
    • B23K2103/40—Paper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne des techniques de traitement laser pour produire des types variés de cellules solaires à hétérojonction et à homojonction. Les procédés consistent à ouvrir une base et un contact d'émetteur, à réaliser un dopage sélectif et à effectuer une ablation de métal. Les techniques de traitement laser sont également appropriées pour effectuer une ablation sélective de silicium amorphe et un dopage sélectif pour des cellules solaires à hétérojonction. Les techniques de traitement laser peuvent être appliquées sur des substrats à semi-conducteurs, notamment des substrats en silicium cristallin, et d'autres substrats en silicium cristallin qui sont produits au moyen de procédés de découpage en tranches par une scie à fil ou de procédés de dépôt épitaxial, qui sont plats ou texturés/tridimensionnels. Ces techniques sont hautement appropriées pour un semi-conducteur à silicium cristallin comprenant les films en silicium cristallin mince.
PCT/US2011/038444 2010-05-27 2011-05-27 Traitement laser pour fabrication de cellules solaires en silicium cristallin mince à efficacité élevée WO2011150397A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020127033876A KR101289787B1 (ko) 2010-05-27 2011-05-27 고효율 박형 결정질 실리콘 태양전지 제조를 위한 레이저 가공방법
EP11787543.5A EP2577750A4 (fr) 2010-05-27 2011-05-27 Traitement laser pour fabrication de cellules solaires en silicium cristallin mince à efficacité élevée

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US34912010P 2010-05-27 2010-05-27
US61/349,120 2010-05-27
US201113057104A 2011-02-01 2011-02-01
US13/057,104 2011-02-01

Publications (2)

Publication Number Publication Date
WO2011150397A2 WO2011150397A2 (fr) 2011-12-01
WO2011150397A3 true WO2011150397A3 (fr) 2012-04-05

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PCT/US2011/038444 WO2011150397A2 (fr) 2010-05-27 2011-05-27 Traitement laser pour fabrication de cellules solaires en silicium cristallin mince à efficacité élevée

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Country Link
EP (1) EP2577750A4 (fr)
KR (1) KR101289787B1 (fr)
WO (1) WO2011150397A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8637340B2 (en) 2004-11-30 2014-01-28 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US9455362B2 (en) 2007-10-06 2016-09-27 Solexel, Inc. Laser irradiation aluminum doping for monocrystalline silicon substrates
KR101654548B1 (ko) * 2011-12-26 2016-09-06 솔렉셀, 인크. 태양 전지에서 향상된 광 포획을 위한 시스템 및 방법
GB2499192A (en) * 2012-02-02 2013-08-14 Rec Cells Pte Ltd Method for producing a solar cell with a selective emitter
AU2013289151A1 (en) * 2012-04-02 2014-11-13 Solexel, Inc. High efficiency solar cell structures and manufacturing methods
CN105122463A (zh) * 2013-02-12 2015-12-02 索莱克赛尔公司 使用体晶片的单片岛型背接触背结太阳能电池
US10553738B2 (en) 2013-08-21 2020-02-04 Sunpower Corporation Interconnection of solar cells in a solar cell module
KR20170025098A (ko) 2015-08-27 2017-03-08 삼성전자주식회사 펄스 레이저를 이용한 그래핀 홀 패터닝 방법 및 그래핀 투명전극 제조방법

Citations (3)

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US20070157965A1 (en) * 2006-01-06 2007-07-12 Sang-Wook Park Solar cell and method of manufacturing the same
US20100059109A1 (en) * 2008-09-09 2010-03-11 Palo Alto Research Center Incorporated Interdigitated Back Contact Silicon Solar Cells With Laser Ablated Grooves
WO2010057060A2 (fr) * 2008-11-13 2010-05-20 Solexel, Inc. Procédés et systèmes de fabrication de cellules solaires à couche mince

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AUPR719701A0 (en) * 2001-08-23 2001-09-13 Pacific Solar Pty Limited Chain link metal interconnect structure
US20060088984A1 (en) * 2004-10-21 2006-04-27 Intel Corporation Laser ablation method
EP2654089A3 (fr) * 2007-02-16 2015-08-12 Nanogram Corporation Structures de cellules solaires, modules photovoltaïques et procédés correspondants
US20090017292A1 (en) * 2007-06-15 2009-01-15 Henry Hieslmair Reactive flow deposition and synthesis of inorganic foils
US20100294349A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Back contact solar cells with effective and efficient designs and corresponding patterning processes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070157965A1 (en) * 2006-01-06 2007-07-12 Sang-Wook Park Solar cell and method of manufacturing the same
US20100059109A1 (en) * 2008-09-09 2010-03-11 Palo Alto Research Center Incorporated Interdigitated Back Contact Silicon Solar Cells With Laser Ablated Grooves
WO2010057060A2 (fr) * 2008-11-13 2010-05-20 Solexel, Inc. Procédés et systèmes de fabrication de cellules solaires à couche mince

Non-Patent Citations (1)

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Title
See also references of EP2577750A4 *

Also Published As

Publication number Publication date
KR20130027535A (ko) 2013-03-15
EP2577750A2 (fr) 2013-04-10
KR101289787B1 (ko) 2013-07-26
EP2577750A4 (fr) 2014-04-09
WO2011150397A2 (fr) 2011-12-01

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