WO2011136603A3 - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

Info

Publication number
WO2011136603A3
WO2011136603A3 PCT/KR2011/003191 KR2011003191W WO2011136603A3 WO 2011136603 A3 WO2011136603 A3 WO 2011136603A3 KR 2011003191 W KR2011003191 W KR 2011003191W WO 2011136603 A3 WO2011136603 A3 WO 2011136603A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing apparatus
plasma
plasma processing
chambers
unit
Prior art date
Application number
PCT/KR2011/003191
Other languages
French (fr)
Korean (ko)
Other versions
WO2011136603A2 (en
Inventor
이경호
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to JP2013507889A priority Critical patent/JP2013529358A/en
Priority to CN2011800204056A priority patent/CN102859665A/en
Publication of WO2011136603A2 publication Critical patent/WO2011136603A2/en
Publication of WO2011136603A3 publication Critical patent/WO2011136603A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treatment Of Fiber Materials (AREA)

Abstract

Disclosed is a plasma processing apparatus. The plasma processing apparatus (1) according to one embodiment of the present invention comprises: first and second chambers (110, 120) which are independently disposed from each other; a unit chamber assembly (100) for plasma-processing a substrate (10) to be inserted therein; and a unit plasma electrode (200) which has a curved shape and generates the plasma to the first and second chambers (110, 120).
PCT/KR2011/003191 2010-04-30 2011-04-29 Plasma processing apparatus WO2011136603A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013507889A JP2013529358A (en) 2010-04-30 2011-04-29 Plasma processing equipment
CN2011800204056A CN102859665A (en) 2010-04-30 2011-04-29 Plasma processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0041048 2010-04-30
KR1020100041048A KR101205242B1 (en) 2010-04-30 2010-04-30 Plasma processing apparatus

Publications (2)

Publication Number Publication Date
WO2011136603A2 WO2011136603A2 (en) 2011-11-03
WO2011136603A3 true WO2011136603A3 (en) 2012-03-08

Family

ID=44862081

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/003191 WO2011136603A2 (en) 2010-04-30 2011-04-29 Plasma processing apparatus

Country Status (5)

Country Link
JP (1) JP2013529358A (en)
KR (1) KR101205242B1 (en)
CN (1) CN102859665A (en)
TW (1) TW201201246A (en)
WO (1) WO2011136603A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013214445A (en) * 2012-04-03 2013-10-17 Ihi Corp Plasma processing apparatus
CN105990080B (en) * 2015-02-02 2019-02-22 苏州爱特维电子科技有限公司 Plasma processing apparatus
CN110828273B (en) * 2018-08-09 2022-07-22 北京北方华创微电子装备有限公司 Plasma apparatus and plasma system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050093951A (en) * 2004-03-17 2005-09-26 주성엔지니어링(주) Manufacturing apparatus for liquid crystal display comprising process chambers which are vertically piled up
KR100576093B1 (en) * 2004-03-15 2006-05-03 주식회사 뉴파워 프라즈마 Plasma reaction chamber having multi arrayed vacuum chamber
KR100757717B1 (en) * 2000-04-13 2007-09-11 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 Thin film forming method, thin film forming apparatus and solar cell
US20090286010A1 (en) * 2008-05-16 2009-11-19 General Electric Company High throughput processes and systems for barrier film deposition and/or encapsulation of optoelectronic devices

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Publication number Priority date Publication date Assignee Title
JPH0745599A (en) * 1993-07-30 1995-02-14 Kokusai Electric Co Ltd Plasma generating device
JPH0745598A (en) * 1993-07-30 1995-02-14 Kokusai Electric Co Ltd Plasma generating device
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US6176667B1 (en) * 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
JPH11317299A (en) * 1998-02-17 1999-11-16 Toshiba Corp High frequency discharge method, its device, and high frequency processing device
JP3541359B2 (en) * 2001-09-19 2004-07-07 独立行政法人 科学技術振興機構 Substrate mounting table incorporating part of ultrasonic probe and sealing device for ultrasonic probe through hole
JP3957549B2 (en) * 2002-04-05 2007-08-15 株式会社日立国際電気 Substrate processing equipment
JP2004055600A (en) * 2002-07-16 2004-02-19 Tokyo Electron Ltd Plasma processing apparatus
KR100798355B1 (en) * 2005-05-23 2008-01-28 주식회사 뉴파워 프라즈마 Plasma processing apparatus having external winding coil for large area processing
KR100720989B1 (en) * 2005-07-15 2007-05-28 주식회사 뉴파워 프라즈마 Multi chamber plasma process system
US7845310B2 (en) * 2006-12-06 2010-12-07 Axcelis Technologies, Inc. Wide area radio frequency plasma apparatus for processing multiple substrates
KR100796980B1 (en) * 2007-01-17 2008-01-22 피에스케이 주식회사 Apparatus and methed for treating substrates
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
KR101117670B1 (en) * 2009-02-02 2012-03-07 주식회사 테라세미콘 Inductively coupled plasma generation source electrode and substrate processing apparatus comprising the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100757717B1 (en) * 2000-04-13 2007-09-11 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 Thin film forming method, thin film forming apparatus and solar cell
KR100576093B1 (en) * 2004-03-15 2006-05-03 주식회사 뉴파워 프라즈마 Plasma reaction chamber having multi arrayed vacuum chamber
KR20050093951A (en) * 2004-03-17 2005-09-26 주성엔지니어링(주) Manufacturing apparatus for liquid crystal display comprising process chambers which are vertically piled up
US20090286010A1 (en) * 2008-05-16 2009-11-19 General Electric Company High throughput processes and systems for barrier film deposition and/or encapsulation of optoelectronic devices

Also Published As

Publication number Publication date
TW201201246A (en) 2012-01-01
WO2011136603A2 (en) 2011-11-03
CN102859665A (en) 2013-01-02
KR101205242B1 (en) 2012-11-27
JP2013529358A (en) 2013-07-18
KR20110121448A (en) 2011-11-07

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