WO2011117161A2 - Capteur de lumière à structure semi-conductrice photosensible - Google Patents

Capteur de lumière à structure semi-conductrice photosensible Download PDF

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Publication number
WO2011117161A2
WO2011117161A2 PCT/EP2011/054173 EP2011054173W WO2011117161A2 WO 2011117161 A2 WO2011117161 A2 WO 2011117161A2 EP 2011054173 W EP2011054173 W EP 2011054173W WO 2011117161 A2 WO2011117161 A2 WO 2011117161A2
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WO
WIPO (PCT)
Prior art keywords
light
substrate
epitaxial layer
node
light sensor
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PCT/EP2011/054173
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German (de)
English (en)
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WO2011117161A3 (fr
Inventor
Michael Franke
Lars Lehmann
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Iee International Electronics & Engineering S.A.
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Publication of WO2011117161A2 publication Critical patent/WO2011117161A2/fr
Publication of WO2011117161A3 publication Critical patent/WO2011117161A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4913—Circuits for detection, sampling, integration or read-out
    • G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar

Definitions

  • the present invention generally relates to a sensor for receiving electromagnetic radiation, in particular a light sensor.
  • sensors can be used, for example, in ToF (Time of Flight) sensors or ToF cameras.
  • ToF Time of Flight
  • the present invention falls within the field of phase information acquisition sensors, from which, with the aid of basic physical quantities, e.g. Propagation speed, e.g. Distance information can be obtained.
  • the smallest unit of such a sensor is often referred to as a pixel.
  • Document EP 1 513 202 A1 describes a pixel in which a lateral electric field (i.e., a field substantially parallel to the layer structure) is used to collect the generated charge carriers between highly doped regions. This approach seems less suitable for small pixels or pixels in an epitaxial layer, because the field strength of the collection field decreases rapidly with increasing depth and therefore minority carriers generated by incident light in depth can only be collected with lower yield.
  • a lateral electric field i.e., a field substantially parallel to the layer structure
  • the document EP 1 777 747 A1 describes a pixel which uses gate structures in the form of a "SNos."
  • the gate structures mainly produce a lateral field component near the surface A vertical component can only act to medium depths With two diffusion regions, the lateral field component between the two also predominantly acts to accumulate the generated charge carriers.
  • EP 1 624 490 A1 describes a pixel in which the gate structures of several fingers in part emboss a field gradient into the substrate. It will be a field volume constructed below the structure, wherein the lateral field component near the surface acts and the vertical component only to medium depths.
  • the gate structure itself serves to collect the charge carriers.
  • the object of the present invention is to propose a pixel with an improved architecture.
  • the light sensor according to the invention comprises a photosensitive semiconductor structure having a moderately to highly doped semiconductor substrate and an epitaxial semiconductor layer applied thereon, which has a weaker doping of the same type as the substrate, wherein on the side facing away from the substrate side of the epitaxial layer, a collecting node in the In turn, the shape of an area of high doping is again of the same type, such that by applying a voltage between the collecting node and the substrate, an electric field passing through the epitaxial layer is formed, which generates minority carriers generated by incident light in the epitaxial layer at the collecting node attracts.
  • Substrate materials may i.a. Si, GaAs, Ge, InP, InGaAs, InGaAsP.
  • the present invention thus utilizes a substantially vertical electric field in an epitaxial layer, which acts even at small pixels to great depth.
  • the depth effect is achieved by the rear side connection on the substrate.
  • vertical and lateral are always referred to with respect to the layer structure of the light sensor. If we speak of a vertical or lateral field, this always means the predominant direction of expansion of the field lines. If, on the other hand, a lateral or vertical field component is mentioned, this refers to the field strength in the vertical or lateral direction.
  • the substrate, the epitaxial layer and the collecting node are p-doped.
  • the substrate preferably has a p or p + doping
  • the epitaxial layer preferably has a p " doping
  • the collecting node preferably has a p + doping.
  • the substrate, the epitaxial layer and the collecting node may also be n-doped.
  • the substrate preferably has an n or n + doping
  • the epitaxial layer preferably has an n " -doping
  • the collecting node preferably has an n + -doping.
  • the substrate may be higher, equal but also weaker doped than the collecting nodes.
  • the substrate is preferably a silicon substrate.
  • the epitaxial layer is preferably an epitaxial silicon layer.
  • a high doping p + or n +
  • a moderate doping means a dopant concentration in the range of 10 16 cm -3 to 10 19 cm "3.
  • a weak doping p " or n " ) means a dopant concentration of at most 10 16 cm -3 . In the case of other substrate materials, the above values may be different.
  • the transition from the collecting node to the epitaxial layer is preferably abrupt (i.e., preferably over a distance of up to 500 nm).
  • the dopant concentration of the epitaxial layer gradually increases from the substrate, e.g. over a distance of at least 1 ⁇ , from.
  • the thickness of the epitaxial layer is preferably not more than 100 ⁇ .
  • the light sensor comprises on the side facing away from the substrate side of the epitaxial layer one or more storage nodes for at least temporary storage of light-generated charge carriers, wherein the storage nodes are designed as regions of high doping other type than the substrate (for example, the storage nodes may be n + regions in a p " -doped epitaxial layer).
  • the light sensor according to the invention comprises at least one transfer gate for deriving applied to the one or more collecting nodes generated by light charge carriers in the one or more storage nodes.
  • the at least one transfer gate has at least two, each a storage node associated webs, each of which extends from its associated storage node to the collecting node and each of which has a connection for docking a control voltage, via which the derivation of light carriers generated in the associated storage nodes used by the collecting node can be controlled.
  • a transfer gate with a plurality of webs and a plurality of separate transfer gates can be provided.
  • a transfer gate is in each case assigned to a storage node, wherein each of the transfer gates extends from the storage node assigned to it to the collecting node, and wherein each of the transfer gates has a connection for applying a control voltage, via which the derivation of the voltage applied to the collecting node Light generated charge carriers can be controlled in the associated storage node.
  • the one or more transfer gates may be made of polysilicon, for example.
  • the transfer gate (s) are / are arranged in a ring around the collection node.
  • the one or more transfer gates may be covered with an optical cover.
  • the light sensor according to the invention can be used, for example, in a distance image sensor, for example a ToF camera chip.
  • a plurality of light sensors are arranged in a one- or two-dimensional matrix.
  • a particularly preferred example of application of the light sensor according to the invention is a ToF distance measuring device, for example a ToF camera or a ToF scanning device.
  • Such a device comprises a light source for emitting amplitude-modulated light into a spatial region and one or more light sensors for detecting amplitude-modulated light reflected back or scattered back from the spatial region.
  • the one or more light sensors are operatively connected to the light source such that the charge carriers generated by the light reflected back or backscattered are diverted into different storage nodes depending on the phase position of the emitted light.
  • a light sensor As pixels, various types of sensors can accordingly be constructed (individual pixels, line or area sensors). In each pixel, charges which are generated by electromagnetic radiation can be collected and, depending on the design of the pixel, also demodulated.
  • Figure 1 is a schematic representation of the semiconductor structure of a possible embodiment of the light sensor according to the invention (cross section).
  • FIG. 2 shows a separate illustration of the collecting structure of the light sensor of FIG. 1 (cross section);
  • FIG. 3 shows the course of the electrostatic potential of the photosensitive structure from FIG. 1 (cross section);
  • FIG. 3 shows the course of the electrostatic potential of the photosensitive structure from FIG. 1 (cross section);
  • FIG. 4 shows a schematic representation of a semiconductor structure of an alternative embodiment of the light sensor according to the invention, wherein the dopings are inverse to those shown in FIG. 1 (cross section);
  • FIG. 5 shows a plan view of a 2-tap demodulation pixel (top) and the course of the modulation potential (bottom); 6 shows a plan view of a 2-tap demodulation pixel with bias connections (top), as well as the course of the modulation potential (bottom);
  • Fig. 7 shows possible control signals for a 2-tap demodulation pixel with bias connections as shown in Fig. 6;
  • Fig. 8 is a plan view of a 4-tap demodulation pixel
  • Fig. 9 is a plan view of a 2-tap pixel wherein the transfer gates do not form a ring around the collection node;
  • Fig. 10 is a 2-tap pixel wherein the transfer gates form a ring with a gap around the collection node;
  • FIG. 1 shows an illustration of the field profile in the semiconductor structure when a plurality of collecting nodes are present
  • Fig. 12 is a plan view of a 2-tap pixel having a plurality of collecting nodes
  • Fig. 13 is a plan view of a 4-tap pixel having a plurality of collecting nodes
  • Fig. 14 is a plan view of a 2-tap pixel having a plurality of collecting nodes and bias terminals.
  • a 3D sensor provides a phase image as the basis for calculating a distance image. Furthermore, he can also output intensity information in the form of a gray value image. These two pieces of information can only be obtained by using a suitable sensor element. Such an element receives electromagnetic radiation (eg light) and converts it into an electrical signal.
  • the smallest functional unit is also called a pixel or pixel cell.
  • pixels are arranged in a matrix form (ie row and column wise).
  • using a light source which emits modulated light detects the phase displacement between transmitted and received light signal that results from the path of the light source-object receiver / sensor.
  • the pixel cell scans the incoming light signal depending on the phase position.
  • the distance value is then extracted from the phase information by means of Speed of light and the modulation frequency of the light source calculated.
  • Such pixel cells are referred to as "demodulation pixels”.
  • each of these pixels can be conceptually subdivided into a collection structure and a demodulator structure.
  • the collection structure charge carriers generated by incident electromagnetic radiation are collected around a collection node.
  • the demodulator structure the collected charge carriers are separated depending on the phase position of the modulation signal.
  • the collecting structure is located in a semiconductor material which consists of at least two layers (Figure 1: 2, 3).
  • a semiconductor material which consists of at least two layers (Figure 1: 2, 3).
  • At the top of the upper layer 2 is a highly doped area, which acts as a collecting node 1.
  • Voltages can be applied to the collecting node and the rear side of the lower semiconductor layer via contacts (FIG. 1: V1, V2).
  • a potential difference between these two contacts and the doping of the layers and the collecting node 1 build up a vertical electric field.
  • Incident electromagnetic radiation e.g., light
  • the electric field acts orienting and accelerating on these charges and forces them to accumulate around the collecting node 1. Here they are now available for further processing.
  • the demodulator structure separates the collected charges depending on the phase position of a modulation signal.
  • a modulated source eg light
  • electrical charges accumulate around the area. So that the charges can be separated depending on the phase position of the modulation frequency, a demodulator is necessary.
  • the demodulation is explained here by means of two phase positions (0 ° and 180 °).
  • a gate structure FOG. 1: transfer gates 5
  • an electric field is generated at the upper semiconductor layer. Due to the geometric shape of the gate structure, it is possible to shift the collected charges into two storage nodes 4 (hereinafter also referred to as "storage pots”) by connecting control signals to the gate structure and to a particular time regime subjects.
  • the control signals generate a field gradient below the transfer gate or gates and thus have an orienting and accelerating effect on the generated charges.
  • the charges pass under the gate in the right or left storage tank.
  • the gate potential, the design of the gate (doping, oxide, etc.) and the properties of the upper semiconductor layer affect the charge transport.
  • the collection area of the demodulator is located in monocrystalline silicon (Si), which is designed as an epitaxial Si wafer.
  • Si monocrystalline silicon
  • the upper layer ( Figure 2: 2) has a higher resistance than the underlying bulk-wafer material, also called substrate ( Figure 2: 3).
  • the upper layer is also called an epitaxial layer because it is less heavily doped (p " ) than the underlying moderately to highly doped (p) material, and at the surface of the epitaxial layer is a highly p + doped region (p +, p + ).
  • this area can be made very small (lateral extent eg ⁇ 2 ⁇ m, vertical extension eg in the range of 10-500 nm), which offers advantages for a small pixel construction
  • the common node is also referred to as p + node
  • V1 the voltage
  • V2 the backside of the substrate
  • V2 Figure 2: V2
  • the electric field strength is therefore very low in the substrate.
  • the p + node ( Figures 1 and 6: 1) is preferably in the middle of a pixel.
  • Another p + terminal ( Figures 1 and 6: 6) can be designed as a guard ring, it is typically located at the edge of a pixel.
  • the voltage at this node should correspond to the voltage of the rear side terminal V2.
  • the photosensitivity of a semiconductor is based on the photon absorption and charge carrier pair generation within the semiconductor material.
  • the electric field acts mainly in the vertical direction and consists of several parts. Essentially, there are three, which are dependent on various influences (Figure 3):
  • Figure 3 In the transition region between bulk and epitaxial layer ( Figure 2: 2, 3), the electric field is also determined mainly by the gradient of the dopant concentration. It is rectified to the field (I).
  • the field strength in the field (I) depends on the applied potential. If you want to collect the generated electrons faster, you have to apply a higher voltage to create a stronger "collection field".
  • the field reversal point between field (II) and field (I) spans approximately as a hemisphere surface around the p + node. If the potential difference (V1 -V2) is changed, the radius of this hemisphere surface changes.
  • FIG. 11 An application example for a 2-tap pixel is shown in FIG. 12.
  • FIG. 13 shows an example of an application for a 4-pixel pixel equipped ( Figure 12 or 13: 1) to limit the lateral Field component is a substrate connection (for example, a so-called "guard ring" 6, see Figure 1 1) within a pixel of advantage.
  • the epitaxial layer is weakly n-doped (n " )
  • the substrate is moderately to highly n-doped (n)
  • the collecting node has a high n-type doping (n + )
  • the mechanism of action can be used with the generated holes explain (instead of electrons in the above text), and a reaction with a quasi-intrinsic epitaxial layer is possible.
  • the demodulator consists of a gate structure (one or more transfer gates) on top of the epitaxial layer ( Figure 1: 5), which is required for electron removal.
  • Two areas serve as storage nodes ( Figure 1: 4) which can accommodate the charge carriers accumulated around the collection node. Both are necessary so that they can store the electron components separately depending on the phase position of the modulation frequency.
  • the gate structure may be embodied as a poly gate and have various geometric shapes.
  • An isolation of the gate structure from the semiconductor material is achieved by the gate oxide, which is located between the gate bottom and the top of the epitaxial layer.
  • the storage nodes are designed as highly n-doped (n + ) regions.
  • V m0 do, V m0 di8) results in the formation of a potential gradient below the gate, which determines the direction of the electrons to be read. This gradient runs between the two gate connections over the webs and each over a semicircle of the poly ring. If the applied voltage V m0 do or V m0 di8 exceeds a certain threshold value, a channel is formed locally below the gate, via which the electrons can flow into one or the other storage cup.
  • the gate doping determines the resistance of the gate and thus the current determined by the applied voltages.
  • the voltage drop across this gate resistor determines the field component under the gate.
  • the threshold voltage is determined by the gate doping. This, in turn, must be taken into account in the choice of electrical potential, since both readout directions should be separated as best as possible, i. that the electron transport in one direction is prevented and optimally designed in the other direction.
  • the gate oxide and its thickness also determines the field strength under the gate. For the overall design of the system, it is important to consider the power consumption. One possibility is to reduce the voltage difference between the applied voltages. But with the lower voltages, the effective field strength decreases. An increase in field strength can now be achieved again with a thinner oxide.
  • the demodulator can be operated with different drive signals.
  • One possibility is the use of only two modulation signals to the polygons (Figure 5).
  • the webs are connected next to the poly ring to two modulation signals (Figure 5: V m0 do, V m0 di8) -
  • the potentials are chosen so that the generated electrons are accelerated in each phase only in the desired readout direction. It is to consider the threshold voltage of the gate construction, so that the channel under the gate into a Direction locks.
  • the threshold voltage U t h is the voltage that has to be applied to the gate in order for a channel to form (no channel forms below this voltage).
  • the demodulation contrast increases with the amount of the difference between V m0 do and V m0 di8-
  • V b i as o and V b i as i 8 is typically to be chosen to be above the threshold voltage of the channel.
  • the potential of V m odo or V m0 di 8 on the reverse side is well below U t h, the potential on the forward side between the blocking potential and the V b i as potential.
  • the demodulation contrast also increases with the magnitude of the difference between V m0 do and V m0 di8-
  • account is to be taken of the gate currents which vary between V mod o & V mod i 8, V bi aso & V mod o and V bias i Set 8 & V mod i8.
  • the time sequence is composed of the three phases “reset”, “integration” and “readout.”
  • the descriptions refer to the "integration”.
  • the two modulation voltages are in each case inverse to each other in this phase ( Figure 7: V m0 do, V m0 di8) -
  • the bias voltage can be modulated.
  • Figure 7: V bias o, V bias i 8 dashed line.
  • the system overhead is increased by this measure.
  • the electrons enter the right or left storage cup below the gate. There they unload the storage pot capacity and set a voltage representing a measure of the generated charge carriers (Figure 7: V S i, V S 2) - this is just one example when integrating directly on the storage well capacitance.
  • further forms such as a capacitively fed-back amplifier are possible (voltage at V S i, V S 2 constant).
  • the demodulator structure can also be designed without a poly ring.
  • One possibility is, for example, a construction only with polystyrene (FIG. 9: 5). The result is a constant field below the respective ridge in the epitaxial layer. This is only a short distance to the storage pot possible ie the webs fall from the construction rather short. This is necessary because there is no gradient accelerating the electrons towards the storage pot.
  • a static current flow between the two modulation signals (Figure 5: V m0 do, V m0 di 8) is no longer within a modulation phase .
  • the poly ring can be interrupted (Figure 10: 5).
  • the entire gate structure then consists of two parts. At the collecting node, the resulting two ring halves are located at the two webs. This is important in this design so that the described field reversal region is covered around the p + node and the field strength of the gate is acting in this region.
  • the functionality corresponds to the structure of FIG. 9 described above.
  • demodulators with two storage nodes.
  • the demodulators of Figures 5 and 6 are expandable with further webs and thus for use z. B. suitable as 4-tap pixels (Figure 8: 5).
  • Figure 8: 5 At the end of each bar there is a storage pot in which the electrons belonging to the phase position 0 °, 90 °, 180 ° or 270 ° of the modulation frequency of the light source are read (FIG. 8: 4).
  • Demodulator structures for 2-tap pixels (FIG. 12: 5) and 4-tap pixels (FIG. 13: 5) can also be implemented for these variants.
  • 2-tap pixel in FIG. 12 respective opposite storage pots are used for a phase position of the modulation frequency.
  • a storage node can receive the expected charge from two p + nodes. Since the opposite storage pots are also connected to each other, this corresponds to the amount of electrons from all four p + nodes ( Figure 12).
  • the storage nodes are designed as highly doped p regions (p +) (see Figure 4).

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

L'invention concerne un capteur de lumière comportant une structure semi-conductrice photosensible comprenant un substrat semi-conducteur modérément à hautement dopé et une couche semi-conductrice épitaxique qui est appliquée sur celui-ci et présente un dopage plus faible du même type que celui du substrat. Un nœud de collecte sous la forme d'une zone à dopage élevé de nouveau du même type est disposé sur le côté de la couche épitaxique opposé au substrat de telle manière que soit formé, par application d'une tension entre le nœud de collecte et le substrat, un champ électrique s'étendant à travers la couche épitaxique, lequel attire sur le nœud de collecte des porteurs de charge minoritaires générés par la lumière incidente sur la couche épitaxique.
PCT/EP2011/054173 2010-03-26 2011-03-21 Capteur de lumière à structure semi-conductrice photosensible WO2011117161A2 (fr)

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EP1624490A1 (fr) 2004-08-04 2006-02-08 C.S.E.M. Centre Suisse D'electronique Et De Microtechnique Sa Pixel à grand surface pour l'usage dans un capteur d'image
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108020845A (zh) * 2016-11-04 2018-05-11 埃斯普罗光电股份公司 接收装置、传感器装置以及用于确定距离的方法
CN108020845B (zh) * 2016-11-04 2022-11-01 埃斯普罗光电股份公司 接收装置、传感器装置以及用于确定距离的方法
DE102016123258A1 (de) 2016-12-01 2018-06-07 Leica Microsystems Cms Gmbh Lumineszenzdetektoranordnung, Fluoreszenzmikroskop und Verfahren zum Detektieren eines Lumineszenzsignals
DE102016123258B4 (de) 2016-12-01 2018-07-19 Leica Microsystems Cms Gmbh Lumineszenzdetektoranordnung, Fluoreszenzmikroskop und Verfahren zum Detektieren eines Lumineszenzsignals

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