WO2011115369A3 - 배면광 적외선 이미지 센서 - Google Patents

배면광 적외선 이미지 센서 Download PDF

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Publication number
WO2011115369A3
WO2011115369A3 PCT/KR2011/000996 KR2011000996W WO2011115369A3 WO 2011115369 A3 WO2011115369 A3 WO 2011115369A3 KR 2011000996 W KR2011000996 W KR 2011000996W WO 2011115369 A3 WO2011115369 A3 WO 2011115369A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon layer
backlight
image sensor
infrared image
bulk
Prior art date
Application number
PCT/KR2011/000996
Other languages
English (en)
French (fr)
Other versions
WO2011115369A2 (ko
Inventor
이병수
Original Assignee
(주)실리콘화일
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)실리콘화일 filed Critical (주)실리콘화일
Publication of WO2011115369A2 publication Critical patent/WO2011115369A2/ko
Publication of WO2011115369A3 publication Critical patent/WO2011115369A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

본 발명에 따른 배면광 적외선 이미지 센서는, 벌크 실리콘(bulk silicon) 으로 형성된 벌크 실리콘층, 상기 벌크 실리콘 층의 하부에 복수의 포토 다이오드를 포함하는 에피택셜 실리콘(epitaxial silicon)이 형성된 에피 실리콘층 및 상기 에피 실리콘층의 하부에 산화물(Oxide) 및 금속(metal) 층이 형성되는 배선 형성층을 구비하되, 상기 벌크 실리콘 층의 두께(tbulk )를 조절함으로써 특정 대역의 빛을 통과(pass) 시키는 것을 특징으로 한다.
PCT/KR2011/000996 2010-03-16 2011-02-16 배면광 적외선 이미지 센서 WO2011115369A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0023281 2010-03-16
KR20100023281 2010-03-16

Publications (2)

Publication Number Publication Date
WO2011115369A2 WO2011115369A2 (ko) 2011-09-22
WO2011115369A3 true WO2011115369A3 (ko) 2011-12-15

Family

ID=44649686

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/000996 WO2011115369A2 (ko) 2010-03-16 2011-02-16 배면광 적외선 이미지 센서

Country Status (1)

Country Link
WO (1) WO2011115369A2 (ko)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005175430A (ja) * 2003-11-18 2005-06-30 Matsushita Electric Ind Co Ltd 受光素子
KR20060010899A (ko) * 2004-07-29 2006-02-03 매그나칩 반도체 유한회사 칼라필터를 제거한 이미지센서 및 그 제조 방법
KR100660714B1 (ko) * 2005-12-29 2006-12-21 매그나칩 반도체 유한회사 백사이드 조명 구조의 씨모스 이미지 센서 및 그의 제조방법
KR20070061530A (ko) * 2004-09-09 2007-06-13 마츠시타 덴끼 산교 가부시키가이샤 고체촬상소자
JP2008041779A (ja) * 2006-08-02 2008-02-21 Matsushita Electric Ind Co Ltd 固体撮像装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005175430A (ja) * 2003-11-18 2005-06-30 Matsushita Electric Ind Co Ltd 受光素子
KR20060010899A (ko) * 2004-07-29 2006-02-03 매그나칩 반도체 유한회사 칼라필터를 제거한 이미지센서 및 그 제조 방법
KR20070061530A (ko) * 2004-09-09 2007-06-13 마츠시타 덴끼 산교 가부시키가이샤 고체촬상소자
KR100660714B1 (ko) * 2005-12-29 2006-12-21 매그나칩 반도체 유한회사 백사이드 조명 구조의 씨모스 이미지 센서 및 그의 제조방법
JP2008041779A (ja) * 2006-08-02 2008-02-21 Matsushita Electric Ind Co Ltd 固体撮像装置

Also Published As

Publication number Publication date
WO2011115369A2 (ko) 2011-09-22

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