WO2011105837A3 - 연성 전극소재 및 그 제조방법 - Google Patents

연성 전극소재 및 그 제조방법 Download PDF

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Publication number
WO2011105837A3
WO2011105837A3 PCT/KR2011/001305 KR2011001305W WO2011105837A3 WO 2011105837 A3 WO2011105837 A3 WO 2011105837A3 KR 2011001305 W KR2011001305 W KR 2011001305W WO 2011105837 A3 WO2011105837 A3 WO 2011105837A3
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WO
WIPO (PCT)
Prior art keywords
electric
electrode material
electrodes
soft
mechanical energy
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Application number
PCT/KR2011/001305
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English (en)
French (fr)
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WO2011105837A2 (ko
Inventor
백종태
박문평
박형호
김현철
이진석
Original Assignee
(주) 씨아이제이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by (주) 씨아이제이 filed Critical (주) 씨아이제이
Priority to US13/580,796 priority Critical patent/US20120312585A1/en
Publication of WO2011105837A2 publication Critical patent/WO2011105837A2/ko
Publication of WO2011105837A3 publication Critical patent/WO2011105837A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/206—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using only longitudinal or thickness displacement, e.g. d33 or d31 type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Conductive Materials (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

본 발명은 카본 블랙과 탄소나노튜브 및 그래핀 중에서 선택되는 적어도 1종의 것과의 혼합물을 함유하는 전극층을 포함하는 연성 전극소재를 개시하는바, 이는 휨 또는 신장 등 전극의 물리적 변형에 대하여 다양한 변형이 용이하고, 또한 이러한 변형시 유연성 내지 신축성이 유지되면서도 전극의 급격한 전기전도도 저하가 방지되며 신뢰성이 우수하여 이를 포함하는 액추에이터 등과 같은 연성 전자부품의 전기적-기계적 에너지 변환 효율이 증가함과 동시에, 전기적-기계적 에너지 변환 효율이 증가할수록 오히려 전극층의 전기전도도가 향상될 수 있다.
PCT/KR2011/001305 2010-02-24 2011-02-24 연성 전극소재 및 그 제조방법 WO2011105837A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/580,796 US20120312585A1 (en) 2010-02-24 2011-02-24 Soft Electrode Material and Manufacturing Method Thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0016628 2010-02-24
KR20100016628 2010-02-24
KR1020110016279A KR101225143B1 (ko) 2010-02-24 2011-02-24 연성 전극소재 및 그 제조방법
KR10-2011-0016279 2011-02-24

Publications (2)

Publication Number Publication Date
WO2011105837A2 WO2011105837A2 (ko) 2011-09-01
WO2011105837A3 true WO2011105837A3 (ko) 2011-12-08

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ID=44507449

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PCT/KR2011/001305 WO2011105837A2 (ko) 2010-02-24 2011-02-24 연성 전극소재 및 그 제조방법

Country Status (3)

Country Link
US (1) US20120312585A1 (ko)
KR (2) KR101225143B1 (ko)
WO (1) WO2011105837A2 (ko)

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CN102543473A (zh) * 2012-02-08 2012-07-04 黑龙江大学 石墨烯与导电炭黑复合材料对电极的制备方法
KR101903053B1 (ko) * 2012-07-10 2018-11-23 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
KR102041525B1 (ko) * 2012-11-20 2019-11-07 삼성디스플레이 주식회사 연신 성능 시험장치
KR102048922B1 (ko) 2013-02-13 2020-01-09 삼성디스플레이 주식회사 플렉시블 디스플레이 장치
CN103199134A (zh) * 2013-03-11 2013-07-10 辽宁德菲格瑞特新型节能材料有限公司 石墨烯电极复合太阳能发电玻璃
JP6207331B2 (ja) * 2013-10-02 2017-10-04 Ｊｆｅエンジニアリング株式会社 太陽電池及びそのカーボン電極の製造方法
US10401240B2 (en) 2014-02-06 2019-09-03 Japan Science And Technology Agency Sheet for pressure sensor, pressure sensor, and method for producing sheet for pressure sensor
CN105336846B (zh) * 2014-07-23 2018-11-09 清华大学 电热致动复合材料及电热致动器
CN105336841B (zh) * 2014-07-23 2018-08-17 清华大学 电热致动器
KR102034002B1 (ko) * 2014-08-26 2019-10-21 한국전자통신연구원 디스플레이 장치 및 그 제조 방법
CN104536162B (zh) * 2015-01-19 2018-08-21 昆山国显光电有限公司 透明显示控制结构及透明显示装置
US10770734B2 (en) 2015-08-14 2020-09-08 Lg Chem, Ltd. Lithium air battery and manufacturing method therefor
CN107562235A (zh) * 2016-07-01 2018-01-09 南昌欧菲光科技有限公司 压力感应器件及触摸显示装置
KR102006831B1 (ko) 2016-08-01 2019-10-08 한국생산기술연구원 탄소나노튜브 방적사를 구비하는 유연 전극 장치, 이의 제조방법 및 이를 이용한 발열 장치
US11176918B2 (en) 2016-11-30 2021-11-16 Yupo Corporation Piezoelectric element and musical instrument
CN108963003B (zh) * 2017-05-24 2020-06-09 清华大学 太阳能电池
KR102014133B1 (ko) * 2018-06-15 2019-08-26 (주)프로템 전도성 기판 제조장치
KR102051762B1 (ko) * 2018-11-30 2019-12-04 주식회사 누리비스타 신축성 페이스트 조성물
KR102429923B1 (ko) 2020-03-25 2022-08-04 고려대학교 산학협력단 탄성 전극 및 이의 제조방법
KR102428349B1 (ko) * 2020-05-18 2022-08-03 피에스케이 주식회사 지지 유닛, 이를 포함하는 기판 처리 장치 및 지지 유닛 제조 방법

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KR20050088192A (ko) * 2002-12-20 2005-09-02 어드밴스드 에너지 테크놀로지 인코포레이티드 가요성 그라파이트 물질 상의 탄소질 코팅
KR20050097711A (ko) * 2004-04-02 2005-10-10 주식회사 디피아이 솔루션스 고농도 탄소나노튜브 수분산액 및 이의 제조방법
KR20060058918A (ko) * 2004-11-26 2006-06-01 삼성에스디아이 주식회사 연료전지용 전극, 이를 포함하는 연료전지 및 연료전지용전극의 제조방법
KR20070024127A (ko) * 2005-08-26 2007-03-02 삼성에스디아이 주식회사 연료 전지용 전극, 이의 제조 방법 및 이를 포함하는 연료전지용 막-전극 어셈블리

Also Published As

Publication number Publication date
WO2011105837A2 (ko) 2011-09-01
KR20120112307A (ko) 2012-10-11
KR101225143B1 (ko) 2013-01-25
KR20110097708A (ko) 2011-08-31
US20120312585A1 (en) 2012-12-13

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