WO2011094311A2 - Ensemble pont rf d'équilibrage - Google Patents

Ensemble pont rf d'équilibrage Download PDF

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Publication number
WO2011094311A2
WO2011094311A2 PCT/US2011/022577 US2011022577W WO2011094311A2 WO 2011094311 A2 WO2011094311 A2 WO 2011094311A2 US 2011022577 W US2011022577 W US 2011022577W WO 2011094311 A2 WO2011094311 A2 WO 2011094311A2
Authority
WO
WIPO (PCT)
Prior art keywords
coupled
backing plate
bracket
bridge assembly
brackets
Prior art date
Application number
PCT/US2011/022577
Other languages
English (en)
Other versions
WO2011094311A3 (fr
Inventor
Jonghoon Baek
Sam H. Kim
Beom Soo Park
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN201190000231.2U priority Critical patent/CN202671648U/zh
Publication of WO2011094311A2 publication Critical patent/WO2011094311A2/fr
Publication of WO2011094311A3 publication Critical patent/WO2011094311A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges

Definitions

  • Embodiments disclosed herein generally relate to a plasma enhanced chemical vapor deposition (PECVD) apparatus.
  • PECVD plasma enhanced chemical vapor deposition
  • PECVD is a process whereby a gas is introduced into an apparatus, the gas is ignited into a plasma and a material layer is deposited onto a substrate.
  • FPD flat panel display
  • OLED organic light emitting display
  • the PECVD chamber size has increased over the years to accommodate the consumer demand for larger FPDs. As the chamber size has increased, so has the power applied to generate the plasma. These larger chambers encounter numerous problems that smaller chambers, typically used to process semiconductor substrates, may experience such as RF grounding and plasma distribution to name only a few. However, the magnitude of the problems for large chambers is significantly greater than for smaller chambers, and the solutions to the problems are not necessarily the same for small chambers and large chambers.
  • slit valve openings One of the problems faced by large area processing chambers is the effect of slit valve openings.
  • the slit valve opening through one of the chamber walls affects the RF return path and may lead to plasma asymmetry within the processing chamber. As the slit valve opening becomes larger to accommodate even larger substrates, the asymmetry can increase. The asymmetry affects the film thickness and the film properties.
  • FIG. 1 is a cross sectional view of a prior art large area PECVD apparatus.
  • the apparatus includes a chamber 100 in which one or more films may be deposited onto a substrate 120.
  • the chamber 100 generally includes walls 102, a bottom 104, a showerhead 106, and substrate support 1 18 which define a process volume.
  • the process volume is accessed through a slit valve opening 108 such that the substrate 120 may be transferred in and out of the chamber 100.
  • the substrate support 1 18 may be coupled to an actuator 1 16 to raise and lower the substrate support 1 18.
  • Lift pins 122 are moveably disposed through the substrate support 1 18 to move a substrate to and from the substrate receiving surface.
  • the substrate support 1 18 may also include heating and/or cooling elements 124 to maintain the substrate support 1 18 at a desired temperature.
  • the substrate support 1 18 may also include RF return straps 126 to provide an RF return path at the periphery of the substrate support 1 18.
  • the showerhead 106 is coupled to a backing plate 1 12 by a fastening mechanism 150.
  • the showerhead 106 and the backing plate 1 12, because they are coupled to the RF power source 128 are considered to be electrodes.
  • the showerhead 106 may be coupled to the backing plate 1 12 by one or more fastening mechanisms 150 to help prevent sag and/or control the straightness/curvature of the showerhead 106.
  • twelve fastening mechanisms 150 may be used to couple the showerhead 106 to the backing plate 1 12.
  • the fastening mechanisms 150 may include a nut and bolt assembly.
  • a gas source 132 is coupled to the backing plate 1 12 to provide gas through gas passages in the showerhead 106 to the substrate 120.
  • a vacuum pump 1 10 is coupled to the chamber 100 to control the process volume 106 at a desired pressure.
  • a RF power source 128 is coupled to the backing plate 1 12 and/or to the showerhead 106 to provide a RF current to the showerhead 106.
  • the RF current creates an electric field between the showerhead 106 and the substrate support 1 18 so that a plasma may be generated from the gases between the showerhead 106 and the substrate support 1 18.
  • Various frequencies may be used, such as a frequency between about 0.3 MHz and about 200 MHz. In one embodiment, the RF current is provided at a frequency of 13.56 MHz.
  • the RF current is supplied to the chamber 100 through a match network 160.
  • the match network 160 is coupled to the gas feed through 170 by an electrically conductive strap 162 and a connection plate 164.
  • the RF current travels from the match network 160 along a path shown by arrows 166 and returns along the path shown by arrows 168.
  • a remote plasma source 130 such as an inductively coupled remote plasma source 130, may also be coupled between the gas source 132 and the backing plate 1 12. Between processing substrates, a cleaning gas may be provided to the remote plasma source 130 so that a remote plasma is generated. The radicals from the remote plasma may be provided to chamber 100 to clean chamber 100 components. The processing gas or remotely generated radicals travel through a gas feed through 170 before entering the area between the backing plate 1 12 and the showerhead 106.
  • the backing plate 1 12 may be supported by a support assembly 138.
  • One or more anchor bolts 140 may extend down from the support assembly 138 to a support ring 144.
  • the support ring 144 may be coupled with the backing plate 1 12 by one or more fastening mechanisms 142.
  • the fastening mechanisms 142 may comprise a nut and bolt assembly.
  • the support ring 144 may be coupled with the backing plate 1 12 substantially in the center of the backing plate 1 12.
  • the center of the backing plate 1 12 is the area of the backing plate 1 12 with the least amount of support in absence of the support ring 144. Therefore, supporting the center area of the backing plate 1 12 may reduce and/or prevent sagging of the backing plate 1 12.
  • the showerhead 106 may be coupled to the backing plate 1 12 by a bracket 134.
  • the bracket 134 may have a ledge 136 upon which the showerhead 106 may rest.
  • the backing plate 1 12 may rest on a ledge 1 14 coupled with the chamber walls 102 to seal the chamber 100.
  • a chamber lid 152 may be coupled with the chamber walls 102 and spaced from the backing plate 1 12 by area 154.
  • the chamber lid 152 may have an opening therethrough to permit the one or more fastening mechanisms 142 to couple with the backing plate 1 12 and the gas feed conduit 156 to supply processing gas to the chamber 100.
  • An RF return plate 146 may be coupled with the ring 144 and the chamber lid 152.
  • the RF return plate 146 may be coupled with the chamber lid 152 by a fastening mechanism 148.
  • the RF return plate 146 may be coupled between the fastening mechanism 142 and the ring 144.
  • the RF return plate 146 provides a path for the RF current to flow back down to the chamber lid 152 and then to the RF power source 128.
  • Figure 2 is a schematic isometric view of a prior art center feed RF coupling. As shown in Figure 2, it is quite crowded in the center area.
  • Figure 2 shows the matching network 160 coupled to an end block 210.
  • the electrically conductive strap 162 is coupled to the match network 160 and the connection plate 164 is coupled to the end block 210.
  • Gas is fed to the chamber from a gas source through the gas feed through 170 into the end block 210 and into the chamber.
  • the end block 210 is surrounded by the support ring 144 that couples the backing plate to the support structure.
  • the processing chamber 100 may have an asymmetry due to the slit valve that causes an asymmetry in film thickness and properties.
  • the asymmetry may be controlled. The location may be moved closer to the slit valve opening and thus, counteract the slit valve opening.
  • Another manner of cancelling the slit valve opening effect on the plasma is to utilize multiple feeding points for the RF power to couple to the electrode.
  • multiple feeding points may lead to reliability problems even with a small variation in the configuration.
  • the impedance of both feeding extensions in a dual feeding system can be changed easily by stray capacitance to the grounding wall.
  • the stray capacitance will cause current change and affect the process results.
  • capacitors installed in the middle of the RF feeding strap could be different within manufacture's error range. In other words, the process is not consistent even with a small variation from chamber to chamber.
  • a single feed has typically been used because it provides greater consistency as opposed to a multiple feed that will have an unbalanced current.
  • the sensitivity of the film profile by the feeding location is a function of the chamber size and the process gases among other things. Therefore, the feeding point is usually different based on the chamber configuration and process. In other words, some cases utilize a feeding point that is very close to the center of the electrode while others utilize a feeding point quite far from the center. Thus, even though a single feed location closer to the slit valve opening may be used to counteract the effects of the slit valve opening, there are situations where there is a competing interest in maintaining the single feed location as close to the center of the electrode as possible. A single feed location that is closer to the slit valve opening and also at the substantial center of the electrode is not possible. A multiple feed option is attractive; however, the multiple feed could be inconsistent as discussed above.
  • Embodiments disclosed herein generally relate to an RF bridge assembly used in a PECVD apparatus.
  • an RF bridge assembly may be coupled between the multiple locations at a location just before connection to the backing plate.
  • the RF bridge assembly substantially equalizes the voltage distribution and current distribution between the multiple locations. Therefore, a substantially identical current and voltage is applied to the backing plate at the multiple locations.
  • an apparatus is disclosed.
  • the apparatus includes a processing chamber having a backing plate having a first electrical connection and a second electrical connection separate from the first electrical connection.
  • the apparatus also includes an RF power source and a match network coupled to the RF power source.
  • the apparatus also includes a first electrically conductive component having a first end coupled to the match network, a second end coupled to one or more first brackets that are coupled to the first electrical connection.
  • the first electrically conductive component also has a third end that is coupled to one or more second brackets that are coupled to the second electrical connection.
  • the apparatus also includes an RF bridge assembly having one or more discrete elements coupled between the first electrical connection and the second electrical connection at a location spaced from the backing plate.
  • an apparatus in another embodiment, includes a processing chamber having a backing plate and a support structure disposed outside of the processing chamber above the backing plate. The support structure is coupled to the backing plate at a substantial center thereof.
  • the apparatus also includes a power source and a matching network coupled to the power source.
  • the apparatus also includes an electrically conductive strap coupled to the matching network, a first bracket coupled to the electrically conductive strap, a second bracket coupled to the first bracket, a third bracket coupled to the first bracket, a fourth bracket coupled to the second bracket and the backing plate, a fifth bracket coupled to the third bracket and the backing plate, and an RF bridge assembly coupled between the fourth and fifth brackets.
  • the RF bridge assembly has one or more discrete elements.
  • a plasma enhanced chemical vapor deposition apparatus in another embodiment, includes a processing chamber and a backing plate disposed in the processing chamber.
  • the backing plate has a first electrical coupling disposed adjacent the substantial center of the backing plate and a second electrical coupling disposed adjacent the substantial center of the backing plate.
  • the second electrical coupling is separate from the first electrical coupling.
  • the apparatus also includes a support ring coupled to the backing plate around the substantial center of the backing plate, a lid disposed above the backing plate and a support structure coupled through the lid to the support ring.
  • the apparatus also includes an RF power source and a matching network disposed on the lid and coupled to the RF power source.
  • the apparatus also includes a gas feed through coupled to the backing plate at the substantial center of the backing plate, the gas feed through extending through the support ring and a first electrically conductive member having a first end, a second end and a third end, the first end coupled to the matching network.
  • the apparatus also includes one or more first brackets coupled between the first electrical coupling and the matching network, one or more second brackets coupled between the second electrical coupling and the matching network, and an RF bridge assembly coupled between the one or more first brackets and the one or more second brackets.
  • the RF bridge assembly has one or more discrete elements.
  • Figure 1 is a cross sectional view of a prior art PECVD apparatus.
  • Figure 2 is a schematic isometric view of a prior art center feed RF coupling that may be utilized on the PECVD apparatus of Figure 1 .
  • Figure 3 is a schematic view of an electrical layout of a dual RF feed coupling to an electrode where an RF bridge assembly is used according to one embodiment.
  • Figures 4A-4D are schematic views of the RF feed coupling to the chamber where an RF bridge assembly is used to balance the voltage according to one embodiment.
  • Embodiments disclosed herein generally relate to an RF bridge assembly used in a PECVD apparatus.
  • an RF bridge assembly may be coupled between the multiple locations at a location just before connection to the backing plate.
  • the RF bridge assembly substantially equalizes the voltage distribution and current distribution between the multiple locations. Therefore, a substantially identical current and voltage is applied to the backing plate at the multiple locations.
  • PECVD apparatus which may be used is available from AKT America, Inc., a subsidiary of Applied Materials, Inc., located in Santa Clara, CA. While the description below will be made in reference to a PECVD apparatus, it is to be understood that the invention is equally applicable to other processing chambers as well, including those made by other manufacturers.
  • FIG. 3 is a schematic view of an electrical layout 300 of a dual RF feed coupling to an electrode 318 where an RF bridge assembly 320 is used to ensure substantially the same voltage is applied at two separate points 314, 316.
  • the RF power source 302 is coupled to a match network.
  • the match network has at least two capacitors 306, 308 therein.
  • the match network is then split to couple to the electrode 318.
  • the RF power is then coupled to the electrode 318 at two separate points 314, 316. It is to be understood that while two connection points 314, 316 have been shown, numerous connection points may be utilized.
  • the split RF feed Prior to connecting to the electrode 318, the split RF feed is coupled together by the RF bridge assembly 320 that electrically couples the two lines together.
  • the RF bridge assembly 320 is represented by inductors 322, 326 and one or more capacitors 324.
  • the RF bridge assembly 320 functions to balance the RF power between the two feed points 314, 316 such that the RF power at the two feed points 314, 316 is substantially identical.
  • the voltage at point 314 may be greater than the voltage at point 316.
  • the excess current that normally would flow to point 314 will flow to point 316 to evenly distribute the voltage.
  • the current is equal to the difference in voltage divided by the impedance of the RF bridge assembly 320. Therefore, a capacitive coupling (such as capacitor 324) in the middle of the RF bridge assembly 320 creates a resonant circuit because an electrical connection has inductance by itself and impedes the current. In other words, impedance should be zero or very small to allow enough current for equalizing the voltage between two different points 314, 316. Accordingly, the RF bridge assembly 320 will increase the voltage and current at point 316. The current will continue to flow and the RF bridge assembly 320 will compensate for the voltage difference between two points.
  • Figures 4A-4D are schematic views of the RF feed coupling to the chamber 100 where an RF bridge assembly 400 is used to balance the voltage.
  • the gas is delivered through the gas feed through 170 through an end block 402.
  • the RF current is initially fed from the match box 160 through electrically conductive strap 162 to a first bracket 406.
  • the first bracket 406 comprises an electrically conductive material.
  • the first bracket 406 has two ends to enable the current to ultimately flow to two different locations.
  • a second bracket 408A is coupled to the first end of the first bracket 406, and a third bracket 408B is coupled to the second end of the first bracket 406. Both the second bracket 408A and the third bracket 408B comprise an electrically conductive material.
  • RF current travels along both the second bracket 408A and the third bracket 408B from the first bracket 406.
  • a fourth bracket 41 OA is coupled to the second bracket 408A
  • a fifth bracket 41 OA is coupled to the third bracket 408B.
  • Both the fourth bracket 41 OA and the fifth bracket 41 OB comprise an electrically conductive material.
  • RF current travels along both the fourth bracket 41 OA and the fifth bracket 41 OB.
  • Both the fourth bracket 41 OA and the fifth bracket 41 OB are coupled to the backing plate 1 12 to deliver the RF current to the backing plate 1 12.
  • the RF bridge assembly 400 couples the fourth and fifth brackets 41 OA, 41 OB together at a location that is close to the backing plate 1 12.
  • the RF bridge assembly 400 includes a sixth bracket 412A that is coupled to the fourth bracket 41 OA.
  • the RF bridge assembly 400 also includes a seventh bracket 412B that is coupled to the fifth bracket 41 OA.
  • the sixth and seventh brackets 412A, 412B are coupled together by an eighth bracket 414.
  • the sixth, seventh and eighth brackets 412A, 412B, 414 each comprise an electrically conductive material.
  • One or more discrete elements 416 are coupled between the eighth bracket 414 and the seventh bracket 412B.
  • the discrete elements 416 may be coupled between the eighth bracket 414 and the sixth bracket 412A or at any location along the RF bridge assembly 400 between the fourth and fifth brackets 41 OA, 41 OB.
  • the discrete elements 416 may comprise resonance capacitors.
  • a single capacitor is present.
  • a plurality of capacitors are present.
  • the plurality of capacitors comprise at least one capacitor that has a different capacity than another capacitor of the plurality of capacitors.
  • the plurality of capacitors have the same capacity.
  • the RF bridge assembly 400 is disposed at a location that is closer to the backing plate 1 12 then to the match network 160. Additionally, the RF bridge assembly 400 is disposed just before where the RF current couples to the electrode.
  • the RF bridge assembly 400 is an electrical resonant connection.
  • the RF bridge assembly 400 functions to evenly distribute the power between the electrical connections so that substantially the same voltage and current is delivered to the backing plate at all RF feed locations. For example, if the voltage and current at one electrical connection is greater than the voltage and current at the other electrical connection, the voltage will evenly distribute using the bridge so that at the location where the electrical connections couple to the backing plate, the current and voltage in final feeding locations are substantially identical. Thus, multiple feeds may be used that are spaced from the substantial center of the electrode. In absence of the RF bridge assembly 400, the current and voltage imbalance may lead to an unbalanced plasma profile in the chamber 100.
  • the RF bridge assembly 400 is connected to the multiple feeding points at a location just before the final RF feeding connection to the electrode.
  • the RF bridge assembly may comprise a metal wire or plate or other electrical connection together with capacitive elements. The closer to the final feeding location the RF bridge assembly 400 is located, the better the effect it will have for minimizing the difference between the multiple feeds because it will compensate for all current and voltage differences just before the RF bridge assembly 400. Accordingly, in a PECVD chamber, the RF bridge assembly 400 should be close to the backing plate 1 12. Even when the current and voltage is different between multiple points, the RF bridge assembly 400 always compensates for the difference by adding more current to the lower voltage point. Accordingly, the voltage and current difference can be minimized at two or more points. It is to be understood that while two connection points to the backing plate have been discussed, additional connection points to the backing plate are contemplated.
  • the voltage and current may be substantially identical at the multiple feed locations.
  • the RF bridge assembly By utilizing the RF bridge assembly, it is possible to compensate for current unbalance which can be caused by off-center split RF feeding for canceling the slit valve effect by disposing the RF feed locations closer to the slit valve opening and spaced from the center.
  • the RF bridge assembly makes it possible to provide the electrical connection as close to the center of the electrode as possible while ensuring the voltage and current at the multiple locations that are close to the center of the electrode are substantially identical.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)

Abstract

Les modes de réalisation selon la présente invention ont en règle générale trait à un appareil de dépôt chimique en phase vapeur assisté par plasma. Lorsque le bloc d'alimentation RF est couplé à l'électrode à de multiples emplacements, le courant et la tension peuvent être différents aux multiples emplacements. Afin de garantir que le courant et la tension sont tous deux sensiblement identiques aux multiples emplacements, un ensemble pont RF peut être couplé entre les multiples emplacements à un emplacement se trouvant juste avant la connexion à l'électrode. L'ensemble pont RF égalise sensiblement la répartition de la tension ainsi que la répartition du courant entre les multiples emplacements. Par conséquent, un courant et une tension sensiblement identiques sont appliqués à l'électrode aux multiples emplacements.
PCT/US2011/022577 2010-01-26 2011-01-26 Ensemble pont rf d'équilibrage WO2011094311A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201190000231.2U CN202671648U (zh) 2010-01-26 2011-01-26 平衡rf电桥组件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29839410P 2010-01-26 2010-01-26
US61/298,394 2010-01-26

Publications (2)

Publication Number Publication Date
WO2011094311A2 true WO2011094311A2 (fr) 2011-08-04
WO2011094311A3 WO2011094311A3 (fr) 2011-10-20

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PCT/US2011/022577 WO2011094311A2 (fr) 2010-01-26 2011-01-26 Ensemble pont rf d'équilibrage

Country Status (4)

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US (1) US8875657B2 (fr)
CN (1) CN202671648U (fr)
TW (1) TWI511446B (fr)
WO (1) WO2011094311A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US10536130B2 (en) * 2017-08-29 2020-01-14 Mks Instruments, Inc. Balancing RF circuit and control for a cross-coupled SIMO distribution network
US11443921B2 (en) * 2020-06-11 2022-09-13 Applied Materials, Inc. Radio frequency ground system and method

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US6359250B1 (en) * 1998-07-13 2002-03-19 Applied Komatsu Technology, Inc. RF matching network with distributed outputs
US20020125223A1 (en) * 1999-07-13 2002-09-12 Johnson Wayne L. Radio frequency power source for generating an inductively coupled plasma
US20070051388A1 (en) * 2005-09-06 2007-03-08 Applied Materials, Inc. Apparatus and methods for using high frequency chokes in a substrate deposition apparatus
US20090022905A1 (en) * 2007-07-20 2009-01-22 Jozef Kudela Rf choke for gas delivery to an rf driven electrode in a plasma processing apparatus
US20090101069A1 (en) * 2007-10-12 2009-04-23 Suhail Anwar Rf return plates for backing plate support

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JP3966669B2 (ja) * 2000-03-24 2007-08-29 株式会社日立国際電気 プラズマ処理装置
DE10306347A1 (de) * 2003-02-15 2004-08-26 Hüttinger Elektronik GmbH & Co. KG Leistungszufuhrregeleinheit
JP5118354B2 (ja) * 2007-02-19 2013-01-16 三菱重工業株式会社 真空処理装置および真空処理装置を用いた製膜方法
EP2232958A4 (fr) * 2007-12-25 2011-01-19 Applied Materials Inc Excitation rf asymétrique pour électrode de chambre à plasma
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Publication number Priority date Publication date Assignee Title
US6359250B1 (en) * 1998-07-13 2002-03-19 Applied Komatsu Technology, Inc. RF matching network with distributed outputs
US20020125223A1 (en) * 1999-07-13 2002-09-12 Johnson Wayne L. Radio frequency power source for generating an inductively coupled plasma
US20070051388A1 (en) * 2005-09-06 2007-03-08 Applied Materials, Inc. Apparatus and methods for using high frequency chokes in a substrate deposition apparatus
US20090022905A1 (en) * 2007-07-20 2009-01-22 Jozef Kudela Rf choke for gas delivery to an rf driven electrode in a plasma processing apparatus
US20090101069A1 (en) * 2007-10-12 2009-04-23 Suhail Anwar Rf return plates for backing plate support

Also Published As

Publication number Publication date
US20110185972A1 (en) 2011-08-04
WO2011094311A3 (fr) 2011-10-20
CN202671648U (zh) 2013-01-16
TW201203850A (en) 2012-01-16
TWI511446B (zh) 2015-12-01
US8875657B2 (en) 2014-11-04

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