WO2011089862A1 - Mounted body production method and mounting device - Google Patents

Mounted body production method and mounting device Download PDF

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Publication number
WO2011089862A1
WO2011089862A1 PCT/JP2011/000071 JP2011000071W WO2011089862A1 WO 2011089862 A1 WO2011089862 A1 WO 2011089862A1 JP 2011000071 W JP2011000071 W JP 2011000071W WO 2011089862 A1 WO2011089862 A1 WO 2011089862A1
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WIPO (PCT)
Prior art keywords
electronic component
substrate
electrode
solder
metal bonding
Prior art date
Application number
PCT/JP2011/000071
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French (fr)
Japanese (ja)
Inventor
孝 ▲松▼村
崇之 齋藤
Original Assignee
ソニーケミカル＆インフォメーションデバイス株式会社
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Publication of WO2011089862A1 publication Critical patent/WO2011089862A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
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    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10674—Flip chip
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954—Other details of electrical connections
    • H05K2201/10977—Encapsulated connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1189—Pressing leads, bumps or a die through an insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
    • H05K3/305—Affixing by adhesive
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494—Heating methods for reflowing of solder
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method for manufacturing a mounting body and a mounting apparatus.
  • Patent Document 1 Japanese Patent Laid-Open No. 9-260421
  • Patent Document 2 Japanese Patent No. 2823012
  • Patent Document 3 Japanese Patent No. 3921459
  • solder is provided on at least one surface of the electrode of the substrate and the electrode of the electronic component, and the substrate, the insulating adhesive layer, and the electronic component are provided.
  • a method of manufacturing a mounting body including a coupling step.
  • the pressing step may include a step of pressing the electronic component against the substrate with an elastic body held by the head.
  • the pressing step may include a step of simultaneously pressing a plurality of electronic components against the substrate with an elastic body.
  • the manufacturing method may further include a step of pre-coating solder on at least one of the substrate electrode and the electronic component electrode.
  • solder is provided on at least one surface of the electrode of the substrate and the electrode of the electronic component, and after the substrate, the insulating adhesive layer, and the electronic component are laminated in this order, By pressing the electronic component against the substrate, the insulating adhesive layer is penetrated, and the pressing portion that contacts the electrode of the electronic component and the electrode of the substrate, and the insulating adhesive layer is heated to the first temperature
  • a heating controller that heats the insulating adhesive layer and then heats the solder to a second temperature to form a metal bonding layer containing solder between the electrode of the substrate and the electrode of the electronic component;
  • a mounting apparatus is provided.
  • the pressing portion may have an elastic body, and the electronic component may be pressed against the substrate with the elastic body.
  • the pressing unit may be an elastic body that simultaneously presses a plurality of electronic components against the substrate.
  • An example of a sectional view of mounting body 100 is shown roughly.
  • An example of the flowchart of the manufacturing method of the mounting body 100 is shown.
  • An example of sectional drawing in the process of laminating substrate 110, adhesive film 320, electronic component 140, and electronic component 160 is shown roughly.
  • An example of sectional drawing in the process of thermosetting adhesive film 320 is shown roughly.
  • An example of mounting device 510 is shown roughly.
  • FIG. 1 schematically shows an example of a cross-sectional view of the mounting body 100.
  • the mounting body 100 may include a substrate 110, an insulating layer 120, an electronic component 140, and an electronic component 160.
  • the substrate 110 include a printed wiring board, a multilayer wiring substrate, a flexible substrate, and a glass substrate.
  • the insulating layer 120 has an insulating property.
  • the insulating layer 120 may bond the substrate 110 to the electronic component 140 and the electronic component 160.
  • the insulating layer 120 is obtained, for example, by curing a thermosetting resin.
  • the electronic component 140 and the electronic component 160 may have a bump 142 and a bump 162, respectively.
  • the bump 142 and the bump 162 are electrically connected to the electrode pad 114 and the electrode pad 116 of the substrate 110, respectively.
  • Examples of the electronic component 140 and the electronic component 160 include ICs, LSIs, resistors, and other substrates.
  • the bump 142 and the bump 162 may be an example of an electrode of an electronic component.
  • the electrode pad 114 and the electrode pad 116 may be an example of a substrate electrode.
  • the metal bonding layer 154 may bond the bump 142 and the electrode pad 114.
  • the metal bonding layer 154 may electrically connect the bump 142 and the electrode pad 114.
  • the metal bonding layer 154 may include a metal having a lower melting point than the bump 142 and the electrode pad 114.
  • the metal bonding layer 154 may include an alloy of a metal having a lower melting point than the bump 142 and the electrode pad 114 and at least one of the bump 142 and the electrode pad 114.
  • the metal bonding layer 156 may bond the bump 162 and the electrode pad 116.
  • the metal bonding layer 156 may electrically connect the bump 162 and the electrode pad 116.
  • the metal bonding layer 156 may include a metal having a melting point lower than that of the bump 162 and the electrode pad 116.
  • the metal bonding layer 156 may include an alloy of a metal having a lower melting point than the bump 162 and the electrode pad 116 and at least one of the bump 162 and the electrode pad 116.
  • FIG. 2 shows an example of a flowchart of a method for manufacturing the mounting body 100.
  • the substrate 110, the electronic component 140, and the electronic component 160 are prepared in S202.
  • solder is precoated on the surface of the electrode pad 116 of the substrate 110. Also, solder is precoated on the surface of the bump 142 of the electronic component 140.
  • the substrate 110, the electronic component 140, and the electronic component 160 are aligned, and the electronic component 140 and the electronic component 160 are disposed on the substrate 110.
  • An adhesive layer is disposed between the substrate 110 and the electronic component 140 and the electronic component 160. The adhesive layer bonds the substrate 110 to the electronic component 140 and the electronic component 160.
  • S204 may be an example of a stacking stage.
  • the adhesive layer preferably has an insulating property when the substrate 110 and the electronic component 140 and the electronic component 160 are electrically connected.
  • the insulating layer 120 may be formed by thermosetting the adhesive layer.
  • the adhesive layer is a temperature at which the solder pre-coated on the surface of the bump 142 forms the metal bonding layer 154 with the electrode pad 114, or the solder pre-coated on the surface of the electrode pad 116 is metal with the bump 162.
  • the thermosetting is preferably performed at a temperature lower than the temperature at which the bonding layer 156 is formed.
  • the adhesive layer may include at least one of a thermosetting resin and a thermoplastic resin.
  • the adhesive layer may include a film-forming resin, a liquid curable component, and a curing agent.
  • the film forming resin include phenoxy resin, polyester resin, polyamide resin, and polyimide resin. It is preferable to include a phenoxy resin from the viewpoint of easy availability of materials and connection reliability.
  • liquid curing component examples include liquid epoxy resins and acrylates. It is preferable to have two or more functional groups from the viewpoints of connection reliability and cured product stability.
  • the curing agent examples include imidazole, amines, sulfonium salts, and onium salts when the liquid curing component is a liquid epoxy resin.
  • the liquid curing component is an acrylate, an organic peroxide can be exemplified as the curing agent.
  • the adhesive layer may contain additives such as various rubber components, softeners and various fillers.
  • the adhesive layer may be a paste-like adhesive or a sheet-like adhesive film.
  • the adhesive layer may be NCF (Non Conductive Film).
  • the electronic component 140 and the electronic component 160 may be arranged on the substrate 110 after the adhesive layer is arranged on the substrate 110.
  • the electronic component 140 and the electronic component 160 may be disposed on the substrate 110 after an adhesive layer is attached to the bump-side surfaces of the electronic component 140 and the electronic component 160. Thereby, it is possible to prepare a work in which the substrate 110, the adhesive layer, the electronic component 140, and the electronic component 160 are stacked in this order.
  • the workpiece prepared in S204 is pressed, and the electronic component 140 and the electronic component 160 are pressed against the substrate 110.
  • the bump 142 pre-coated with solder penetrates the adhesive layer, and the bump 142 pre-coated with solder and the electrode pad 114 come into contact with each other.
  • the bump 162 penetrates the adhesive layer, and the bump 162 and the electrode pad 116 pre-coated with solder come into contact with each other.
  • S206 may be an example of a pressing step.
  • the electronic component 140 and the electronic component 160 may be pressed against the substrate 110 with an elastic body.
  • the elastic body include elastomers such as natural rubber, synthetic rubber, and silicone rubber. Thereby, the position shift of the electronic component 140 and the electronic component 160 can be prevented. Further, even when a plurality of types of electronic components having different heights are mounted on a substrate, all the electronic components can be pressed against the substrate by pressing the electronic components with an elastic body. Thereby, a several electronic component can be pressed simultaneously and a tact time can be shortened.
  • the adhesive layer disposed between the substrate 110, the electronic component 140, and the electronic component 160 is heated to thermally cure the adhesive layer.
  • S208 may be an example of a thermosetting stage.
  • the adhesive layer is heated to a temperature at which the adhesive layer is thermally cured and the substrate 110 and the electronic component 140 and electronic component 160 are bonded.
  • the adhesive layer has a temperature at which the solder pre-coated on the surface of the bump 142 forms the metal bonding layer 154 with the electrode pad 114, or the solder pre-coated on the surface of the electrode pad 116 and the bump 162. The temperature is lower than the temperature at which the metal bonding layer 156 is formed.
  • the pressing step and the thermosetting step are not limited to this.
  • the pressing step and the thermosetting step may be performed in the same process.
  • the workpiece may be heated while pressing the workpiece, or the workpiece may be pressed while heating the workpiece.
  • the workpiece is heated to form a metal bonding layer 154 between the electrode pad 114 and the bump 142.
  • a metal bonding layer 156 is formed between the electrode pad 116 and the bump 162.
  • S210 may be an example of a metal bonding step.
  • the temperature at which the metal bonding layer 154 and the metal bonding layer 156 are formed in S210 is different from the temperature at which the adhesive layer is thermally cured in S208.
  • the temperature at which the metal bonding layer 154 and the metal bonding layer 156 are formed in S210 may be higher than the temperature at which the adhesive layer is thermally cured in S208.
  • the temperature when the adhesive layer is thermally cured in S208 may be 100 ° C. to 180 ° C.
  • the temperature when forming the metal bonding layer 154 and the metal bonding layer 156 in S210 may be 200 ° C. to 265 ° C.
  • the metal bonding layer 154 may be formed by melting the solder pre-coated on the surface of the bump 142. Alternatively, the metal bonding layer 154 may be formed by fusing the solder pre-coated on the surface of the bump 142 and the electrode pad 114 to form an alloy. Similarly, the metal bonding layer 156 may be formed by melting solder precoated on the surface of the electrode pad 116. Alternatively, the metal bonding layer 156 may be formed by fusing the solder pre-coated on the surface of the electrode pad 116 and the bump 162 to form an alloy.
  • the steps S206, S208, and S210 may be performed using the same apparatus.
  • the steps S206 and S208 may be performed using the same device, and the step S210 may be performed using a device different from the device that performs S206 and S208.
  • the metal bonding layer 154 and the metal bonding layer 156 can be formed between the substrate 110 and the electronic component 140 and the electronic component 160. Thereby, the connection reliability of the board
  • the metal bonding layer 154 and the metal bonding layer 156 are formed after the adhesive layer is thermally cured. Thereby, it can suppress that a solder spreads to the space
  • the substrate 110, the electronic component 140, and the electronic component 160 it is not necessary to press the substrate 110, the electronic component 140, and the electronic component 160 in the step of forming the metal bonding layer 154 and the metal bonding layer 156.
  • elastomers such as a natural rubber used for an elastic body, synthetic rubber, and silicone rubber, can be controlled.
  • the insulating layer 120 is formed between the substrate 110 and the electronic component 140 and the electronic component 160.
  • FIG. 3 schematically shows an example of a cross-sectional view in the step of laminating the substrate 110, the adhesive film 320, the electronic component 140, and the electronic component 160.
  • FIG. 3 schematically shows an example of a cross-sectional view of the workpiece 300.
  • the workpiece 300 includes a substrate 110, an adhesive film 320, an electronic component 140, and an electronic component 160.
  • the substrate 110, the adhesive film 320, the electronic component 140, and the electronic component 160 are laminated in this order.
  • the bump 142 has a precoat layer 342 on the surface of the bump 142.
  • the precoat layer 342 may be a metal having a lower melting point than the bump 142 and the electrode pad 114. Examples of the precoat layer 342 include solder or solder that has been subjected to rust prevention treatment.
  • the precoat layer 342 may be formed by reflow.
  • the bump 142 and the electrode pad 114 may include at least one metal selected from the group consisting of gold, silver, copper, nickel, and solder.
  • the precoat layer 342 may use solder having a melting point lower than that of the solder included in the bump 142 or electrode pad 114.
  • the electrode pad 116 has a precoat layer 316 on the surface of the electrode pad 116.
  • the precoat layer 316 may be a metal having a lower melting point than the bump 162 and the electrode pad 116. Examples of the precoat layer 316 include solder or solder subjected to rust prevention treatment.
  • the precoat layer 342 may be formed by reflow.
  • the bump 162 and the electrode pad 116 may include at least one metal selected from the group consisting of gold, silver, copper, nickel, and solder.
  • the precoat layer 316 may use solder having a melting point lower than that of the solder included in the bump 162 or electrode pad 116.
  • the adhesive film 320 includes a thermosetting resin, and is thermally cured at a temperature lower than the temperature at which the precoat layer 342 and the precoat layer 316 form the metal bonding layer 154 and the metal bonding layer 156.
  • the adhesive film 320 may be an example of an insulating adhesive layer and the adhesive layer described in connection with S204.
  • FIG. 4 schematically shows an example of a cross-sectional view in the step of thermosetting the adhesive film 320.
  • the bump 142 penetrates the adhesive film 320, and the precoat layer 342 formed on the surface of the bump 142 and the electrode pad 114 come into contact with each other.
  • the bump 162 penetrates the adhesive film 320, and the bump 162 and the precoat layer 316 formed on the surface of the electrode pad 116 come into contact with each other.
  • the oxide film can be physically destroyed.
  • the metal bonding layer 154 and the metal bonding layer 156 can be formed without flux.
  • the adhesive film 320 is thermally cured, and the insulating layer 120 is formed. Thereby, it can suppress that the electrodes which are not intended are electrically connected.
  • the precoat layer 342 and the precoat layer 316 have not yet formed the metal bonding layer 154 and the metal bonding layer 156.
  • the adhesive film 320 is thermally cured at a temperature lower than the temperature at which the precoat layer 342 and the precoat layer 316 form the metal bonding layer 154 and the metal bonding layer 156. Therefore, the adhesive film 320 can be thermally cured before forming the metal bonding layer 154 and the metal bonding layer 156.
  • the metal bonding layer 154 and the metal bonding layer 156 can be formed by heating the workpiece 300 and melting the precoat layer 342 and the precoat layer 316. As described above, the mounting body 100 can be manufactured.
  • FIG. 5 schematically shows an example of the mounting apparatus 510.
  • the mounting apparatus 510 may include a stage 520, a head 530, a drive unit 540, and a control unit 550.
  • FIG. 5 schematically shows an example of the mounting apparatus 510 in a state where the workpiece 300 is held between the stage 520 and the head 530.
  • Stage 520 holds work 300.
  • the stage 520 may heat the workpiece 300.
  • the stage 520 may include a heating unit 522.
  • the heating unit 522 may heat the stage 520 based on an instruction from the control unit 550.
  • the head 530 sandwiches the workpiece 300 between the head 530 and the stage 520.
  • the head 530 may include a head main body 532, a pressing member 534, and a holding member 536.
  • the head 530 and the pressing member 534 may be an example of a pressing unit.
  • the head main body 532 presses the pressing member 534 toward the stage 520.
  • the head body 532 may be a highly rigid metal such as iron or stainless steel.
  • the pressing member 534 is disposed between the head main body 532 and the stage 520.
  • the pressing member 534 presses the workpiece 300 toward the stage 520.
  • the electronic component 140 is pressed against the substrate 110, and the bump 142 on which the precoat layer 342 is formed penetrates the adhesive film 320.
  • the electronic component 160 is pressed against the substrate 110, and the bump 162 penetrates the adhesive film 320.
  • the precoat layer 342 of the bump 142 and the electrode pad 114 come into contact with each other.
  • the bump 162 and the precoat layer 316 of the electrode pad 116 are in contact with each other.
  • the pressing member 534 may be a material that is more elastic than the head body 532.
  • the pressing member 534 may be an elastomer such as natural rubber, synthetic rubber, or silicone rubber. Thereby, a some electronic component can be pressed simultaneously with respect to a board
  • the pressing member 534 may be an example of an elastic body.
  • the holding member 536 holds the pressing member 534 on the surface of the head main body 532 facing the stage 520.
  • the holding member 536 may hold the peripheral edge portion of the pressing member 534.
  • the driving unit 540 moves the head 530 toward the stage 520 based on an instruction from the control unit 550. Accordingly, the head 530 presses the electronic component 140 and the electronic component 160 against the substrate 110 with the pressing member 534. In addition, the driving unit 540 separates the head 530 from the stage 520 based on an instruction from the control unit 550. Examples of the drive unit 540 include an air cylinder, a hydraulic cylinder, and a servo motor.
  • the drive unit 540 moves the head 530 toward the stage 520
  • the drive unit 540 is not limited to this.
  • the driving unit 540 may move the stage 520 toward the head 530.
  • the control unit 550 may control the heating unit 522 to heat the stage 520.
  • the controller 550 may control the drive unit 540 to raise and lower the head 530.
  • the control unit 550 may be an example of a heating control unit.
  • the control unit 550 may control the driving unit 540 to move the head 530 toward the stage 520 and press the workpiece 300. At this time, the control unit 550 may heat the workpiece 300 to thermally cure the adhesive film 320.
  • the control unit 550 may control the heating unit 522 so that the temperature of the workpiece 300 falls within a predetermined temperature range. At this time, the control unit 550 may control the heating unit 522 so that the temperature of the adhesive film 320 is higher than the thermosetting temperature of the adhesive film 320. Control unit 550 may control heating unit 522 such that the temperature of precoat layer 342 and precoat layer 316 is lower than the temperature at which metal bonding layer 154 and metal bonding layer 156 are formed.
  • control unit 550 controls the driving unit 540 to raise the head 530. As a result, the pressing member 534 is separated from the stage 520.
  • the controller 550 separates the pressing member 534 and the stage 520 and then heats the workpiece 300 on which the insulating film 120 is formed by the thermosetting of the adhesive film 320, so that the gap between the electrode pad 114 and the bump 142 is increased.
  • a metal bonding layer 154 may be formed.
  • a metal bonding layer 156 may be formed between the electrode pad 116 and the bump 162.
  • the control unit 550 may control the heating unit 522 so that the temperature of the stage 520 is different between the step of forming the metal bonding layer 154 and the metal bonding layer 156 and the step of thermosetting the adhesive film 320.
  • the control unit 550 may control the heating unit 522 so that the temperature of the workpiece 300 is within a predetermined temperature range. At this time, the control unit 550 may control the heating unit 522 so that the temperature of the precoat layer 342 and the precoat layer 316 is higher than the temperature at which the metal bonding layer 154 and the metal bonding layer 156 are formed.
  • the mounting apparatus 510 can manufacture the mounting body 100. Further, the metal bonding layer 154 and the metal bonding layer 156 can be formed in a state where the pressing member 534 is separated from the stage 520. As a result, deterioration of the pressing member 534 can be suppressed.
  • the mounting apparatus 510 performs the process of thermally curing the adhesive film 320 and the process of forming the metal bonding layer 154 and the metal bonding layer 156 has been described.
  • the mounting apparatus 510 is not limited to this.
  • the mounting apparatus 510 may perform the process of thermally curing the adhesive film 320, and the apparatus different from the mounting apparatus 510 may perform the process of forming the metal bonding layer 154 and the metal bonding layer 156.
  • a reflow apparatus can be exemplified as an apparatus for performing the step of forming the metal bonding layer 154 and the metal bonding layer 156.
  • An IC having a bump pitch of 85 ⁇ m was prepared as an evaluation element (TEG).
  • the size of the IC was 6.3 mm ⁇ 6.3 mm.
  • Three ICs were prepared.
  • the bump of the evaluation element was prepared by pre-coating 15 ⁇ m Sn-2.5Ag on the surface of a 20 ⁇ m Cu electrode by reflow. 272 bumps were produced per IC.
  • a circuit board having an electrode pad pitch of 85 ⁇ m was prepared as an evaluation element (TEG).
  • the electrode pad of the evaluation element was produced by plating Au on the surface of the Ni electrode.
  • the size of the circuit board was 38 mm ⁇ 38 mm.
  • B14-4 (Sony Chemical & Information Device Co., Ltd.) was prepared as an example of NCF (Non Conductive Film).
  • B14-4 was cut into a size of 7 mm ⁇ 7 mm to prepare three NCFs.
  • Three NCFs were attached to the surface of the circuit board where the electrode pads were formed.
  • the IC and the circuit board were aligned, and the IC was placed on each of the three NCFs.
  • the circuit board and the three ICs were heated while being pressed to temporarily press-bond the three ICs to the circuit board.
  • Temporary pressure bonding conditions were set to a temperature of 100 ° C. and a pressure of 3 kgf.
  • the crimping time was set to 1 second.
  • the circuit board after provisional pressure bonding was heated while pressing, and three ICs were finally pressure bonded to the circuit board.
  • the conditions for the main pressure bonding were set to a temperature of 180 ° C. and a pressure of 2 MPa.
  • the crimping time was set to 20 seconds.
  • B14-4 was thermoset by main compression.
  • the circuit board after the main pressure bonding was reflowed under the condition of a peak temperature of 265 ° C. to melt Sn-2.5Ag.
  • the reflow time was set to 300 seconds.
  • a moisture absorption reflow test For the purpose of confirming connection reliability, a moisture absorption reflow test, a pressure cooker test (PCT), and a temperature cycle test (TCT) were conducted. After each test, a continuity test was performed on 40 bumps per IC. The continuity test was carried out by a four-terminal method.
  • the moisture absorption reflow test was conducted under the condition of Level 2a of JEDEC (Joint Electron Engineering Engineering Council). As a result of the moisture absorption reflow test, no connection failure occurred.
  • the pressure cooker test was performed under the conditions of a pressure of 0.23 Mpa, a temperature of 130 ° C., and a humidity of 85% RH. The pressure cooker test was conducted for up to 200 hours, but no connection failure occurred.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

In order to produce a mounted body with a high degree of connection reliability, a layering step in which a solder is disposed upon the surface of at least either the electrode of a substrate or the electrode of an electronic component, and in which the substrate, an insulated adhesion layer, and the electronic component are layered in that order; a pressing step in which the electrode of the electronic component and the electrode of the substrate are brought into contact through the insulated adhesion layer by pressing the electronic component to the substrate; a thermal curing step in which the insulated adhesion layer is thermally cured by heating the insulated adhesion layer to a first temperature; and a metallic bonding step in which a metallic bonding layer comprising the solder is formed between the electrode of the substrate and the electrode of the electronic component by heating the solder to a second temperature, are provided.

Description

実装体の製造方法および実装装置Mounting body manufacturing method and mounting apparatus
　本発明は、実装体の製造方法および実装装置に関する。 The present invention relates to a method for manufacturing a mounting body and a mounting apparatus.
　近年、基板の小型化、高集積化に伴い、バンプを有する電子部品を基板に実装することが行われている。電子部品は、半田または熱硬化性樹脂により基板に固着される（例えば、特許文献１～３を参照。）。
　特許文献１　特開平９－２６０４２１号公報
　特許文献２　特許第２８２３０１２号明細書
　特許文献３　特許第３９２１４５９号明細書 2. Description of the Related Art In recent years, electronic components having bumps have been mounted on a substrate with the miniaturization and high integration of the substrate. The electronic component is fixed to the substrate with solder or a thermosetting resin (see, for example, Patent Documents 1 to 3).
Patent Document 1 Japanese Patent Laid-Open No. 9-260421 Patent Document 2 Japanese Patent No. 2823012 Patent Document 3 Japanese Patent No. 3921459
　半田により電子部品を基板に実装する場合には、溶融した半田が電子部品と基板との間に広がり、電子部品の電極同士を電気的に接続してしまう場合がある。一方、熱硬化性樹脂により電子部品を基板に実装する場合には、半田により電子部品を基板に実装する場合と比較して、電子部品の電極と基板の電極との間の固着力が弱い。本発明の１つの側面においては、上記の課題を解決することのできる実装体の製造方法および実装装置を提供することを目的とする。この目的は請求の範囲における独立項に記載の特徴の組み合わせにより達成される。また従属項は本発明の更なる有利な具体例を規定する。 When an electronic component is mounted on a substrate by solder, the molten solder spreads between the electronic component and the substrate, and the electrodes of the electronic component may be electrically connected. On the other hand, when the electronic component is mounted on the substrate with the thermosetting resin, the adhesion force between the electrode of the electronic component and the electrode of the substrate is weaker than when the electronic component is mounted on the substrate with the solder. In one side of this invention, it aims at providing the manufacturing method and mounting apparatus of a mounting body which can solve said subject. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous specific examples of the present invention.
　上記課題を解決するために、本発明の第１の態様においては、基板の電極および電子部品の電極の少なくとも一方の表面に半田が設けられており、基板、絶縁性接着層、および電子部品をこの順で積層させる積層段階と、基板に対して電子部品を押圧することにより、電子部品の電極と基板の電極とを接触させる押圧段階と、絶縁性接着層を第１の温度に加熱することにより、絶縁性接着層を熱硬化させる熱硬化段階と、半田を第２の温度に加熱することにより、基板の電極と電子部品の電極との間に、半田を含む金属結合層を形成する金属結合段階とを備える実装体の製造方法が提供される。 In order to solve the above problems, in the first aspect of the present invention, solder is provided on at least one surface of the electrode of the substrate and the electrode of the electronic component, and the substrate, the insulating adhesive layer, and the electronic component are provided. A lamination step of laminating in this order, a pressing step of bringing the electrode of the electronic component and the electrode of the substrate into contact with each other by pressing the electronic component against the substrate, and heating the insulating adhesive layer to the first temperature A metal that forms a metal bonding layer containing solder between the electrode of the substrate and the electrode of the electronic component by heating the solder to a second temperature by thermally curing the insulating adhesive layer; There is provided a method of manufacturing a mounting body including a coupling step.
　上記の製造方法において、押圧段階は、ヘッドに保持されている弾性体で、電子部品を基板に対して押圧する段階を有してよい。上記の製造方法において、押圧段階は、弾性体で、複数の電子部品を基板に対して同時に押圧する段階を有してよい。上記の製造方法において、基板の電極および電子部品の電極の少なくとも一方に、半田をプリコートする段階をさらに備えてよい。 In the above manufacturing method, the pressing step may include a step of pressing the electronic component against the substrate with an elastic body held by the head. In the above manufacturing method, the pressing step may include a step of simultaneously pressing a plurality of electronic components against the substrate with an elastic body. The manufacturing method may further include a step of pre-coating solder on at least one of the substrate electrode and the electronic component electrode.
　本発明の第２の態様においては、基板の電極および電子部品の電極の少なくとも一方の表面に半田が設けられており、基板、絶縁性接着層、および電子部品がこの順で積層された後、基板に対して電子部品を押圧することにより、絶縁性接着層を貫通させて電子部品の電極と基板の電極とを接触させる押圧部と、絶縁性接着層を第１の温度に加熱することにより、絶縁性接着層を熱硬化させた後、半田を第２の温度に加熱することにより、基板の電極と電子部品の電極との間に、半田を含む金属結合層を形成させる加熱制御部とを備える実装装置が提供される。 In the second aspect of the present invention, solder is provided on at least one surface of the electrode of the substrate and the electrode of the electronic component, and after the substrate, the insulating adhesive layer, and the electronic component are laminated in this order, By pressing the electronic component against the substrate, the insulating adhesive layer is penetrated, and the pressing portion that contacts the electrode of the electronic component and the electrode of the substrate, and the insulating adhesive layer is heated to the first temperature A heating controller that heats the insulating adhesive layer and then heats the solder to a second temperature to form a metal bonding layer containing solder between the electrode of the substrate and the electrode of the electronic component; A mounting apparatus is provided.
　上記の実装装置において、押圧部は、弾性体を有し、弾性体で電子部品を基板に対して押圧してよい。上記の実装装置において、押圧部は、弾性体で複数の電子部品を基板に対して同時に押圧してよい。 In the above mounting apparatus, the pressing portion may have an elastic body, and the electronic component may be pressed against the substrate with the elastic body. In the mounting apparatus, the pressing unit may be an elastic body that simultaneously presses a plurality of electronic components against the substrate.
　なお、上記の発明の概要は、本発明の必要な特徴の全てを列挙したものではない。また、これらの特徴群のサブコンビネーションもまた、発明となりうる。 Note that the above summary of the invention does not enumerate all the necessary features of the present invention. Also, a sub-combination of these feature groups can be an invention.
実装体１００の断面図の一例を概略的に示す。An example of a sectional view of mounting body 100 is shown roughly. 実装体１００の製造方法のフローチャートの一例を示す。An example of the flowchart of the manufacturing method of the mounting body 100 is shown. 基板１１０、接着フィルム３２０、電子部品１４０および電子部品１６０を積層する工程における断面図の一例を概略的に示す。An example of sectional drawing in the process of laminating substrate 110, adhesive film 320, electronic component 140, and electronic component 160 is shown roughly. 接着フィルム３２０を熱硬化させる工程における断面図の一例を概略的に示す。An example of sectional drawing in the process of thermosetting adhesive film 320 is shown roughly. 実装装置５１０の一例を概略的に示す。An example of mounting device 510 is shown roughly.
　以下、発明の実施の形態を通じて本発明を説明するが、以下の実施形態は請求の範囲にかかる発明を限定するものではない。また、実施形態の中で説明されている特徴の組み合わせの全てが発明の解決手段に必須であるとは限らない。 Hereinafter, the present invention will be described through embodiments of the invention. However, the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.
　以下、図面を参照して、実施形態について説明するが、図面の記載において、同一または類似の部分には同一の参照番号を付して重複する説明を省く場合がある。なお、図面は模式的なものであり、厚みと平面寸法との関係、比率等は現実のものとは異なる場合がある。また、説明の都合上、図面相互間においても互いの寸法の関係又は比率が異なる部分が含まれる場合がある。 Hereinafter, embodiments will be described with reference to the drawings. In the description of the drawings, the same or similar parts may be denoted by the same reference numerals, and redundant description may be omitted. The drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio, and the like may be different from the actual ones. In addition, for convenience of explanation, there may be a case where the drawings have different dimensional relationships or ratios.
　図１は、実装体１００の断面図の一例を概略的に示す。実装体１００は、基板１１０と、絶縁層１２０と、電子部品１４０と、電子部品１６０とを備えてよい。基板１１０としては、プリント配線板、多層配線基板、フレキシブル基板、ガラス基板などを例示できる。絶縁層１２０は、絶縁性を有する。絶縁層１２０は、基板１１０と、電子部品１４０および電子部品１６０とを接着してよい。絶縁層１２０は、例えば、熱硬化性樹脂を硬化させて得られる。 FIG. 1 schematically shows an example of a cross-sectional view of the mounting body 100. The mounting body 100 may include a substrate 110, an insulating layer 120, an electronic component 140, and an electronic component 160. Examples of the substrate 110 include a printed wiring board, a multilayer wiring substrate, a flexible substrate, and a glass substrate. The insulating layer 120 has an insulating property. The insulating layer 120 may bond the substrate 110 to the electronic component 140 and the electronic component 160. The insulating layer 120 is obtained, for example, by curing a thermosetting resin.
　電子部品１４０および電子部品１６０は、それぞれ、バンプ１４２およびバンプ１６２を有してよい。バンプ１４２およびバンプ１６２は、それぞれ、基板１１０の電極パッド１１４および電極パッド１１６と電気的に接続される。電子部品１４０および電子部品１６０としては、ＩＣ、ＬＳＩ、抵抗器、他の基板などを例示できる。バンプ１４２およびバンプ１６２は、電子部品の電極の一例であってよい。電極パッド１１４および電極パッド１１６は、基板の電極の一例であってよい。 The electronic component 140 and the electronic component 160 may have a bump 142 and a bump 162, respectively. The bump 142 and the bump 162 are electrically connected to the electrode pad 114 and the electrode pad 116 of the substrate 110, respectively. Examples of the electronic component 140 and the electronic component 160 include ICs, LSIs, resistors, and other substrates. The bump 142 and the bump 162 may be an example of an electrode of an electronic component. The electrode pad 114 and the electrode pad 116 may be an example of a substrate electrode.
　金属結合層１５４は、バンプ１４２と電極パッド１１４とを結合してよい。金属結合層１５４は、バンプ１４２と電極パッド１１４とを電気的に接続してよい。金属結合層１５４は、バンプ１４２および電極パッド１１４より融点の低い金属を含んでよい。金属結合層１５４は、バンプ１４２および電極パッド１１４より融点の低い金属と、バンプ１４２および電極パッド１１４の少なくとも一方との合金を含んでもよい。 The metal bonding layer 154 may bond the bump 142 and the electrode pad 114. The metal bonding layer 154 may electrically connect the bump 142 and the electrode pad 114. The metal bonding layer 154 may include a metal having a lower melting point than the bump 142 and the electrode pad 114. The metal bonding layer 154 may include an alloy of a metal having a lower melting point than the bump 142 and the electrode pad 114 and at least one of the bump 142 and the electrode pad 114.
　金属結合層１５６は、バンプ１６２と電極パッド１１６とを結合してよい。金属結合層１５６は、バンプ１６２と電極パッド１１６とを電気的に接続してよい。金属結合層１５６は、バンプ１６２および電極パッド１１６より融点の低い金属を含んでよい。金属結合層１５６は、バンプ１６２および電極パッド１１６より融点の低い金属と、バンプ１６２および電極パッド１１６の少なくとも一方との合金を含んでもよい。 The metal bonding layer 156 may bond the bump 162 and the electrode pad 116. The metal bonding layer 156 may electrically connect the bump 162 and the electrode pad 116. The metal bonding layer 156 may include a metal having a melting point lower than that of the bump 162 and the electrode pad 116. The metal bonding layer 156 may include an alloy of a metal having a lower melting point than the bump 162 and the electrode pad 116 and at least one of the bump 162 and the electrode pad 116.
　図２は、実装体１００の製造方法のフローチャートの一例を示す。本実施形態においては、Ｓ２０２において、基板１１０と、電子部品１４０および電子部品１６０とを準備する。本実施形態では、基板１１０の電極パッド１１６の表面に半田をプリコートする。また、電子部品１４０のバンプ１４２の表面に半田をプリコートする。 FIG. 2 shows an example of a flowchart of a method for manufacturing the mounting body 100. In the present embodiment, the substrate 110, the electronic component 140, and the electronic component 160 are prepared in S202. In this embodiment, solder is precoated on the surface of the electrode pad 116 of the substrate 110. Also, solder is precoated on the surface of the bump 142 of the electronic component 140.
　Ｓ２０４において、基板１１０と電子部品１４０および電子部品１６０とを位置合わせして、基板１１０の上に、電子部品１４０および電子部品１６０を配置する。基板１１０と電子部品１４０および電子部品１６０との間には、接着層が配される。接着層は、基板１１０と電子部品１４０および電子部品１６０とを接着する。Ｓ２０４は、積層段階の一例であってよい。 In S204, the substrate 110, the electronic component 140, and the electronic component 160 are aligned, and the electronic component 140 and the electronic component 160 are disposed on the substrate 110. An adhesive layer is disposed between the substrate 110 and the electronic component 140 and the electronic component 160. The adhesive layer bonds the substrate 110 to the electronic component 140 and the electronic component 160. S204 may be an example of a stacking stage.
　接着層は、基板１１０と電子部品１４０および電子部品１６０とが電気的に接続されたときに、絶縁性を有することが好ましい。接着層は、熱硬化することで、絶縁層１２０を形成してよい。接着層は、バンプ１４２の表面にプリコートされた半田が電極パッド１１４との間で金属結合層１５４を形成する温度、または、電極パッド１１６の表面にプリコートされた半田がバンプ１６２との間で金属結合層１５６を形成する温度よりも低い温度で熱硬化することが好ましい。 The adhesive layer preferably has an insulating property when the substrate 110 and the electronic component 140 and the electronic component 160 are electrically connected. The insulating layer 120 may be formed by thermosetting the adhesive layer. The adhesive layer is a temperature at which the solder pre-coated on the surface of the bump 142 forms the metal bonding layer 154 with the electrode pad 114, or the solder pre-coated on the surface of the electrode pad 116 is metal with the bump 162. The thermosetting is preferably performed at a temperature lower than the temperature at which the bonding layer 156 is formed.
　接着層は、熱硬化性樹脂および熱可塑性樹脂の少なくとも一方を含んでよい。接着層は、膜形成樹脂、液状硬化成分および硬化剤を含んでよい。膜形成樹脂としては、フェノキシ樹脂、ポリエステル樹脂、ポリアミド樹脂、ポリイミド樹脂を例示できる。材料の入手の容易さおよび接続信頼性の観点からフェノキシ樹脂を含むことが好ましい。 The adhesive layer may include at least one of a thermosetting resin and a thermoplastic resin. The adhesive layer may include a film-forming resin, a liquid curable component, and a curing agent. Examples of the film forming resin include phenoxy resin, polyester resin, polyamide resin, and polyimide resin. It is preferable to include a phenoxy resin from the viewpoint of easy availability of materials and connection reliability.
　液状硬化成分としては、液状エポキシ樹脂、アクリレートを例示できる。接続信頼性および硬化物の安定性の観点から２以上の官能基を有することが好ましい。硬化剤としては、液状硬化成分が液状エポキシ樹脂の場合は、イミダゾール、アミン類、スルホニウム塩、オニウム塩を例示できる。液状硬化成分がアクリレートの場合には、硬化剤として有機過酸化物を例示できる。 Examples of the liquid curing component include liquid epoxy resins and acrylates. It is preferable to have two or more functional groups from the viewpoints of connection reliability and cured product stability. Examples of the curing agent include imidazole, amines, sulfonium salts, and onium salts when the liquid curing component is a liquid epoxy resin. When the liquid curing component is an acrylate, an organic peroxide can be exemplified as the curing agent.
　接着層は、各種ゴム成分、柔軟剤、各種フィラー類等の添加剤を含んでよい。接着層は、ペースト状の接着剤であってもよく、シート状の接着フィルムであってもよい。接着層は、ＮＣＦ（Ｎｏｎ　Ｃｏｎｄｕｃｔｉｖｅ　Ｆｉｌｍ）であってよい。 The adhesive layer may contain additives such as various rubber components, softeners and various fillers. The adhesive layer may be a paste-like adhesive or a sheet-like adhesive film. The adhesive layer may be NCF (Non Conductive Film).
　接着層の配置方法は特に限定されないが、基板１１０の上に接着層を配置した後、基板１１０の上に電子部品１４０および電子部品１６０を配置してよい。また、電子部品１４０および電子部品１６０のバンプ側の面に接着層を貼り付けた後、基板１１０の上に電子部品１４０および電子部品１６０を配置してもよい。これにより、基板１１０と、接着層と、電子部品１４０および電子部品１６０とがこの順に積層されたワークを準備することができる。 Although the arrangement method of the adhesive layer is not particularly limited, the electronic component 140 and the electronic component 160 may be arranged on the substrate 110 after the adhesive layer is arranged on the substrate 110. Alternatively, the electronic component 140 and the electronic component 160 may be disposed on the substrate 110 after an adhesive layer is attached to the bump-side surfaces of the electronic component 140 and the electronic component 160. Thereby, it is possible to prepare a work in which the substrate 110, the adhesive layer, the electronic component 140, and the electronic component 160 are stacked in this order.
　Ｓ２０６において、Ｓ２０４で準備したワークを押圧して、基板１１０に対して、電子部品１４０および電子部品１６０を押圧する。これにより、半田がプリコートされたバンプ１４２が接着層を貫通して、半田がプリコートされたバンプ１４２と、電極パッド１１４とが接触する。また、バンプ１６２が接着層を貫通して、バンプ１６２と、半田がプリコートされた電極パッド１１６とが接触する。Ｓ２０６は、押圧段階の一例であってよい。 In S206, the workpiece prepared in S204 is pressed, and the electronic component 140 and the electronic component 160 are pressed against the substrate 110. As a result, the bump 142 pre-coated with solder penetrates the adhesive layer, and the bump 142 pre-coated with solder and the electrode pad 114 come into contact with each other. Further, the bump 162 penetrates the adhesive layer, and the bump 162 and the electrode pad 116 pre-coated with solder come into contact with each other. S206 may be an example of a pressing step.
　Ｓ２０６において、弾性体で、電子部品１４０および電子部品１６０を基板１１０に対して押圧してよい。弾性体としては、天然ゴム、合成ゴム、シリコーンゴムなどのエラストマーを例示できる。これにより、電子部品１４０および電子部品１６０の位置ずれを防止できる。また、高さの異なる複数の種類の電子部品を基板に実装する場合であっても、電子部品を弾性体で押圧することで、全ての電子部品を基板に対して押圧することができる。これにより、複数の電子部品を同時に押圧することができ、タクトタイムを短縮することができる。 In S206, the electronic component 140 and the electronic component 160 may be pressed against the substrate 110 with an elastic body. Examples of the elastic body include elastomers such as natural rubber, synthetic rubber, and silicone rubber. Thereby, the position shift of the electronic component 140 and the electronic component 160 can be prevented. Further, even when a plurality of types of electronic components having different heights are mounted on a substrate, all the electronic components can be pressed against the substrate by pressing the electronic components with an elastic body. Thereby, a several electronic component can be pressed simultaneously and a tact time can be shortened.
　Ｓ２０８において、基板１１０と電子部品１４０および電子部品１６０との間に配された接着層を加熱して、接着層を熱硬化させる。Ｓ２０８は、熱硬化段階の一例であってよい。Ｓ２０８において、接着層は、接着層が熱硬化して、基板１１０と電子部品１４０および電子部品１６０とが接着される温度に加熱される。Ｓ２０８において、接着層は、バンプ１４２の表面にプリコートされた半田が電極パッド１１４との間で金属結合層１５４を形成する温度、または、電極パッド１１６の表面にプリコートされた半田がバンプ１６２との間で金属結合層１５６を形成する温度よりも低い温度に維持される。 In S208, the adhesive layer disposed between the substrate 110, the electronic component 140, and the electronic component 160 is heated to thermally cure the adhesive layer. S208 may be an example of a thermosetting stage. In S <b> 208, the adhesive layer is heated to a temperature at which the adhesive layer is thermally cured and the substrate 110 and the electronic component 140 and electronic component 160 are bonded. In S <b> 208, the adhesive layer has a temperature at which the solder pre-coated on the surface of the bump 142 forms the metal bonding layer 154 with the electrode pad 114, or the solder pre-coated on the surface of the electrode pad 116 and the bump 162. The temperature is lower than the temperature at which the metal bonding layer 156 is formed.
　なお、本実施形態において、Ｓ２０６においてワークを押圧して、Ｓ２０８においてワークを加熱して接着層を熱硬化させる場合について説明した。しかし、押圧段階および熱硬化段階はこれに限定されない。例えば、押圧段階と熱硬化段階とが同一の工程で実施されてもよい。この場合、ワークを押圧しながらワークを加熱してもよく、ワークを加熱しながらワークを押圧してもよい。 In the present embodiment, the case where the workpiece is pressed in S206 and the workpiece is heated in S208 to thermally cure the adhesive layer has been described. However, the pressing step and the thermosetting step are not limited to this. For example, the pressing step and the thermosetting step may be performed in the same process. In this case, the workpiece may be heated while pressing the workpiece, or the workpiece may be pressed while heating the workpiece.
　Ｓ２１０において、ワークを加熱して、電極パッド１１４とバンプ１４２の間に金属結合層１５４を形成する。また、電極パッド１１６とバンプ１６２との間に金属結合層１５６を形成する。Ｓ２１０は、金属結合段階の一例であってよい。 In S210, the workpiece is heated to form a metal bonding layer 154 between the electrode pad 114 and the bump 142. A metal bonding layer 156 is formed between the electrode pad 116 and the bump 162. S210 may be an example of a metal bonding step.
　Ｓ２１０において金属結合層１５４および金属結合層１５６を形成するときの温度は、Ｓ２０８において接着層を熱硬化させるときの温度とは異なる。Ｓ２１０において金属結合層１５４および金属結合層１５６を形成するときの温度は、Ｓ２０８において接着層を熱硬化させるときの温度より高くてよい。例えば、Ｓ２０８において接着層を熱硬化させるときの温度が１００℃～１８０℃であり、Ｓ２１０において金属結合層１５４および金属結合層１５６を形成するときの温度が２００℃～２６５℃であってよい。 The temperature at which the metal bonding layer 154 and the metal bonding layer 156 are formed in S210 is different from the temperature at which the adhesive layer is thermally cured in S208. The temperature at which the metal bonding layer 154 and the metal bonding layer 156 are formed in S210 may be higher than the temperature at which the adhesive layer is thermally cured in S208. For example, the temperature when the adhesive layer is thermally cured in S208 may be 100 ° C. to 180 ° C., and the temperature when forming the metal bonding layer 154 and the metal bonding layer 156 in S210 may be 200 ° C. to 265 ° C.
　Ｓ２１０においては、バンプ１４２の表面にプリコートされた半田を溶融させることで、金属結合層１５４を形成してよい。また、バンプ１４２の表面にプリコートされた半田と電極パッド１１４とを融合させて合金を形成させることで、金属結合層１５４を形成してもよい。同様に、電極パッド１１６の表面にプリコートされた半田を溶融させることで、金属結合層１５６を形成してよい。また、電極パッド１１６の表面にプリコートされた半田とバンプ１６２とを融合させて合金を形成させることで、金属結合層１５６を形成してもよい。 In S210, the metal bonding layer 154 may be formed by melting the solder pre-coated on the surface of the bump 142. Alternatively, the metal bonding layer 154 may be formed by fusing the solder pre-coated on the surface of the bump 142 and the electrode pad 114 to form an alloy. Similarly, the metal bonding layer 156 may be formed by melting solder precoated on the surface of the electrode pad 116. Alternatively, the metal bonding layer 156 may be formed by fusing the solder pre-coated on the surface of the electrode pad 116 and the bump 162 to form an alloy.
　Ｓ２０６、Ｓ２０８およびＳ２１０の工程は、同一の装置を用いて実施されてもよい。また、Ｓ２０６およびＳ２０８の工程は、同一の装置を用いて実施され、Ｓ２１０の工程は、Ｓ２０６およびＳ２０８を実施する装置とは異なる装置を用いて実施されてもよい。 The steps S206, S208, and S210 may be performed using the same apparatus. The steps S206 and S208 may be performed using the same device, and the step S210 may be performed using a device different from the device that performs S206 and S208.
　本実施形態によれば、基板１１０と電子部品１４０および電子部品１６０との間に金属結合層１５４および金属結合層１５６を形成することができる。これにより、基板１１０と電子部品１４０および電子部品１６０との接続信頼性を向上することができる。 According to this embodiment, the metal bonding layer 154 and the metal bonding layer 156 can be formed between the substrate 110 and the electronic component 140 and the electronic component 160. Thereby, the connection reliability of the board | substrate 110, the electronic component 140, and the electronic component 160 can be improved.
　本実施形態によれば、接着層を熱硬化させた後で、金属結合層１５４および金属結合層１５６を形成する。これにより、基板１１０と電子部品１４０または電子部品１６０との間の空隙に半田が広がることを抑制することができる。その結果、意図しない電極同士が電気的に接続されることを抑制することができる。 According to the present embodiment, the metal bonding layer 154 and the metal bonding layer 156 are formed after the adhesive layer is thermally cured. Thereby, it can suppress that a solder spreads to the space | gap between the board | substrate 110 and the electronic component 140 or the electronic component 160. FIG. As a result, it is possible to suppress unintended electrodes from being electrically connected to each other.
　本実施形態によれば、金属結合層１５４および金属結合層１５６を形成する工程において、基板１１０と電子部品１４０および電子部品１６０とを押圧しなくてよい。これにより、弾性体に用いられる天然ゴム、合成ゴム、シリコーンゴムなどのエラストマーの劣化を抑制することができる。 According to the present embodiment, it is not necessary to press the substrate 110, the electronic component 140, and the electronic component 160 in the step of forming the metal bonding layer 154 and the metal bonding layer 156. Thereby, degradation of elastomers, such as a natural rubber used for an elastic body, synthetic rubber, and silicone rubber, can be controlled.
　本実施形態によれば、金属結合層１５４および金属結合層１５６が形成されたときには、基板１１０と電子部品１４０および電子部品１６０との間に絶縁層１２０が形成されている。これにより、金属結合層１５４および金属結合層１５６を形成した後、基板１１０と電子部品１４０および電子部品１６０との間にアンダーフィルを充填する工程が不要になる。 According to the present embodiment, when the metal bonding layer 154 and the metal bonding layer 156 are formed, the insulating layer 120 is formed between the substrate 110 and the electronic component 140 and the electronic component 160. Thereby, after forming the metal bonding layer 154 and the metal bonding layer 156, a step of filling an underfill between the substrate 110 and the electronic component 140 and the electronic component 160 becomes unnecessary.
　図３は、基板１１０、接着フィルム３２０、電子部品１４０および電子部品１６０を積層する工程における断面図の一例を概略的に示す。図３は、ワーク３００の断面図の一例を概略的に示す。ワーク３００は、基板１１０と、接着フィルム３２０と、電子部品１４０および電子部品１６０とを有する。基板１１０と、接着フィルム３２０と、電子部品１４０および電子部品１６０とは、この順に積層される。 FIG. 3 schematically shows an example of a cross-sectional view in the step of laminating the substrate 110, the adhesive film 320, the electronic component 140, and the electronic component 160. FIG. 3 schematically shows an example of a cross-sectional view of the workpiece 300. The workpiece 300 includes a substrate 110, an adhesive film 320, an electronic component 140, and an electronic component 160. The substrate 110, the adhesive film 320, the electronic component 140, and the electronic component 160 are laminated in this order.
　バンプ１４２は、バンプ１４２の表面にプリコート層３４２を有する。プリコート層３４２は、バンプ１４２および電極パッド１１４よりも融点の低い金属であってよい。プリコート層３４２としては、半田または防錆処理が施された半田を例示できる。プリコート層３４２は、リフローにより形成してよい。 The bump 142 has a precoat layer 342 on the surface of the bump 142. The precoat layer 342 may be a metal having a lower melting point than the bump 142 and the electrode pad 114. Examples of the precoat layer 342 include solder or solder that has been subjected to rust prevention treatment. The precoat layer 342 may be formed by reflow.
　バンプ１４２および電極パッド１１４は、金、銀、銅、ニッケルおよび半田からなる群から選択される少なくとも１つの金属を含んでよい。バンプ１４２または電極パッド１１４が半田を含む場合には、プリコート層３４２はバンプ１４２または電極パッド１１４に含まれる半田よりも融点の低い半田を用いてよい。 The bump 142 and the electrode pad 114 may include at least one metal selected from the group consisting of gold, silver, copper, nickel, and solder. When the bump 142 or the electrode pad 114 includes solder, the precoat layer 342 may use solder having a melting point lower than that of the solder included in the bump 142 or electrode pad 114.
　電極パッド１１６は、電極パッド１１６の表面にプリコート層３１６を有する。プリコート層３１６は、バンプ１６２および電極パッド１１６よりも融点の低い金属であってよい。プリコート層３１６としては、半田または防錆処理が施された半田を例示できる。プリコート層３４２は、リフローにより形成してよい。 The electrode pad 116 has a precoat layer 316 on the surface of the electrode pad 116. The precoat layer 316 may be a metal having a lower melting point than the bump 162 and the electrode pad 116. Examples of the precoat layer 316 include solder or solder subjected to rust prevention treatment. The precoat layer 342 may be formed by reflow.
　バンプ１６２および電極パッド１１６は、金、銀、銅、ニッケルおよび半田からなる群から選択される少なくとも１つの金属を含んでよい。バンプ１６２または電極パッド１１６が半田を含む場合には、プリコート層３１６はバンプ１６２または電極パッド１１６に含まれる半田よりも融点の低い半田を用いてよい。 The bump 162 and the electrode pad 116 may include at least one metal selected from the group consisting of gold, silver, copper, nickel, and solder. When the bump 162 or the electrode pad 116 includes solder, the precoat layer 316 may use solder having a melting point lower than that of the solder included in the bump 162 or electrode pad 116.
　接着フィルム３２０は、熱硬化性樹脂を含み、プリコート層３４２およびプリコート層３１６が金属結合層１５４および金属結合層１５６を形成する温度よりも低い温度で熱硬化する。接着フィルム３２０は、絶縁性接着層およびＳ２０４に関連して説明した接着層の一例であってよい。 The adhesive film 320 includes a thermosetting resin, and is thermally cured at a temperature lower than the temperature at which the precoat layer 342 and the precoat layer 316 form the metal bonding layer 154 and the metal bonding layer 156. The adhesive film 320 may be an example of an insulating adhesive layer and the adhesive layer described in connection with S204.
　図４は、接着フィルム３２０を熱硬化させる工程における断面図の一例を概略的に示す。図４に示すとおり、ワーク３００が押圧されることで、バンプ１４２が接着フィルム３２０を貫通して、バンプ１４２の表面に形成されたプリコート層３４２と、電極パッド１１４とが接触する。また、バンプ１６２が接着フィルム３２０を貫通して、バンプ１６２と電極パッド１１６の表面に形成されたプリコート層３１６とが接触する。 FIG. 4 schematically shows an example of a cross-sectional view in the step of thermosetting the adhesive film 320. As shown in FIG. 4, when the workpiece 300 is pressed, the bump 142 penetrates the adhesive film 320, and the precoat layer 342 formed on the surface of the bump 142 and the electrode pad 114 come into contact with each other. Further, the bump 162 penetrates the adhesive film 320, and the bump 162 and the precoat layer 316 formed on the surface of the electrode pad 116 come into contact with each other.
　これにより、プリコート層３４２およびプリコート層３１６の表面に酸化膜が形成されている場合であっても、酸化膜を物理的に破壊することができる。その結果、プリコート層３１６およびプリコート層３４２を加熱することで、フラックスがなくても、金属結合層１５４および金属結合層１５６を形成することができる。 Thereby, even if an oxide film is formed on the surfaces of the precoat layer 342 and the precoat layer 316, the oxide film can be physically destroyed. As a result, by heating the precoat layer 316 and the precoat layer 342, the metal bonding layer 154 and the metal bonding layer 156 can be formed without flux.
　電子部品１４０および電子部品１６０が基板１１０に対して押圧された状態で、ワーク３００が加熱されることで、接着フィルム３２０が熱硬化して、絶縁層１２０が形成される。これにより、意図しない電極同士が電気的に接続されることを抑制することができる。 When the workpiece 300 is heated while the electronic component 140 and the electronic component 160 are pressed against the substrate 110, the adhesive film 320 is thermally cured, and the insulating layer 120 is formed. Thereby, it can suppress that the electrodes which are not intended are electrically connected.
　図４に示すとおり、プリコート層３４２およびプリコート層３１６は、まだ、金属結合層１５４および金属結合層１５６を形成していない。接着フィルム３２０は、プリコート層３４２およびプリコート層３１６が金属結合層１５４および金属結合層１５６を形成する温度よりも低い温度で熱硬化する。よって、金属結合層１５４および金属結合層１５６を形成する前に、接着フィルム３２０を熱硬化することができる。 As shown in FIG. 4, the precoat layer 342 and the precoat layer 316 have not yet formed the metal bonding layer 154 and the metal bonding layer 156. The adhesive film 320 is thermally cured at a temperature lower than the temperature at which the precoat layer 342 and the precoat layer 316 form the metal bonding layer 154 and the metal bonding layer 156. Therefore, the adhesive film 320 can be thermally cured before forming the metal bonding layer 154 and the metal bonding layer 156.
　この後、例えば、ワーク３００を加熱して、プリコート層３４２およびプリコート層３１６を溶融させることで、金属結合層１５４および金属結合層１５６を形成することができる。以上により、実装体１００を製造することができる。 Thereafter, for example, the metal bonding layer 154 and the metal bonding layer 156 can be formed by heating the workpiece 300 and melting the precoat layer 342 and the precoat layer 316. As described above, the mounting body 100 can be manufactured.
　図５は、実装装置５１０の一例を概略的に示す。実装装置５１０は、ステージ５２０と、ヘッド５３０と、駆動部５４０と、制御部５５０とを備えてよい。図５は、ステージ５２０とヘッド５３０との間にワーク３００を保持した状態における実装装置５１０の一例を概略的に示す。 FIG. 5 schematically shows an example of the mounting apparatus 510. The mounting apparatus 510 may include a stage 520, a head 530, a drive unit 540, and a control unit 550. FIG. 5 schematically shows an example of the mounting apparatus 510 in a state where the workpiece 300 is held between the stage 520 and the head 530.
　ステージ５２０は、ワーク３００を保持する。ステージ５２０はワーク３００を加熱してよい。ステージ５２０は、加熱部５２２を有してよい。加熱部５２２は、制御部５５０の指示に基づいて、ステージ５２０を加熱してよい。 Stage 520 holds work 300. The stage 520 may heat the workpiece 300. The stage 520 may include a heating unit 522. The heating unit 522 may heat the stage 520 based on an instruction from the control unit 550.
　ヘッド５３０は、ステージ５２０との間にワーク３００を挟む。ヘッド５３０は、ヘッド本体５３２と、押圧部材５３４と、保持部材５３６とを有してよい。ヘッド５３０および押圧部材５３４は、押圧部の一例であってよい。ヘッド本体５３２は、押圧部材５３４をステージ５２０に向かって押圧する。ヘッド本体５３２は、鉄、ステンレス鋼などの剛性の大きな金属であってよい。 The head 530 sandwiches the workpiece 300 between the head 530 and the stage 520. The head 530 may include a head main body 532, a pressing member 534, and a holding member 536. The head 530 and the pressing member 534 may be an example of a pressing unit. The head main body 532 presses the pressing member 534 toward the stage 520. The head body 532 may be a highly rigid metal such as iron or stainless steel.
　押圧部材５３４は、ヘッド本体５３２とステージ５２０との間に配される。押圧部材５３４は、ワーク３００をステージ５２０に向かって押圧する。これにより、電子部品１４０が基板１１０に対して押圧され、プリコート層３４２が形成されたバンプ１４２が、接着フィルム３２０を貫通する。電子部品１６０が基板１１０に対して押圧され、バンプ１６２が、接着フィルム３２０を貫通する。その結果、バンプ１４２のプリコート層３４２と電極パッド１１４とが接触する。バンプ１６２と電極パッド１１６のプリコート層３１６とが接触する。 The pressing member 534 is disposed between the head main body 532 and the stage 520. The pressing member 534 presses the workpiece 300 toward the stage 520. Thereby, the electronic component 140 is pressed against the substrate 110, and the bump 142 on which the precoat layer 342 is formed penetrates the adhesive film 320. The electronic component 160 is pressed against the substrate 110, and the bump 162 penetrates the adhesive film 320. As a result, the precoat layer 342 of the bump 142 and the electrode pad 114 come into contact with each other. The bump 162 and the precoat layer 316 of the electrode pad 116 are in contact with each other.
　押圧部材５３４は、ヘッド本体５３２より弾性の大きな材料であってよい。押圧部材５３４は、天然ゴム、合成ゴム、シリコーンゴムなどのエラストマーであってよい。これにより、複数の電子部品を基板に対して同時に押圧することができる。押圧部材５３４は、弾性体の一例であってよい。保持部材５３６は、ヘッド本体５３２のステージ５２０と対向する側の面に、押圧部材５３４を保持する。保持部材５３６は、押圧部材５３４の周縁部を保持してよい。 The pressing member 534 may be a material that is more elastic than the head body 532. The pressing member 534 may be an elastomer such as natural rubber, synthetic rubber, or silicone rubber. Thereby, a some electronic component can be pressed simultaneously with respect to a board | substrate. The pressing member 534 may be an example of an elastic body. The holding member 536 holds the pressing member 534 on the surface of the head main body 532 facing the stage 520. The holding member 536 may hold the peripheral edge portion of the pressing member 534.
　駆動部５４０は、制御部５５０の指示に基づいて、ヘッド５３０をステージ５２０に向かって移動させる。これにより、ヘッド５３０が、押圧部材５３４で、電子部品１４０および電子部品１６０を基板１１０に対して押圧する。また、駆動部５４０は、制御部５５０の指示に基づいて、ヘッド５３０をステージ５２０から離隔させる。駆動部５４０としては、エアシリンダ、油圧シリンダ、サーボモータを例示できる。 The driving unit 540 moves the head 530 toward the stage 520 based on an instruction from the control unit 550. Accordingly, the head 530 presses the electronic component 140 and the electronic component 160 against the substrate 110 with the pressing member 534. In addition, the driving unit 540 separates the head 530 from the stage 520 based on an instruction from the control unit 550. Examples of the drive unit 540 include an air cylinder, a hydraulic cylinder, and a servo motor.
　なお、本実施形態において、駆動部５４０がヘッド５３０をステージ５２０に向かって移動させる場合について説明したが、駆動部５４０はこれに限定されない。駆動部５４０は、ステージ５２０をヘッド５３０に向かって移動させてよい。 In the present embodiment, the case where the drive unit 540 moves the head 530 toward the stage 520 has been described, but the drive unit 540 is not limited to this. The driving unit 540 may move the stage 520 toward the head 530.
　制御部５５０は、加熱部５２２を制御して、ステージ５２０を加熱してよい。制御部５５０は、駆動部５４０を制御して、ヘッド５３０を昇降させてよい。制御部５５０は、加熱制御部の一例であってよい。 The control unit 550 may control the heating unit 522 to heat the stage 520. The controller 550 may control the drive unit 540 to raise and lower the head 530. The control unit 550 may be an example of a heating control unit.
　制御部５５０は、駆動部５４０を制御して、ヘッド５３０をステージ５２０に向かって移動させて、ワーク３００を押圧してよい。このとき、制御部５５０は、ワーク３００を加熱して、接着フィルム３２０を熱硬化させてよい。 The control unit 550 may control the driving unit 540 to move the head 530 toward the stage 520 and press the workpiece 300. At this time, the control unit 550 may heat the workpiece 300 to thermally cure the adhesive film 320.
　制御部５５０は、ワーク３００の温度が所定の温度範囲に収まるように、加熱部５２２を制御してよい。このとき、制御部５５０は、接着フィルム３２０の温度が接着フィルム３２０の熱硬化温度よりも高くなるように、加熱部５２２を制御してよい。また、制御部５５０は、プリコート層３４２およびプリコート層３１６の温度が、金属結合層１５４および金属結合層１５６が形成される温度より低くなるように、加熱部５２２を制御してよい。 The control unit 550 may control the heating unit 522 so that the temperature of the workpiece 300 falls within a predetermined temperature range. At this time, the control unit 550 may control the heating unit 522 so that the temperature of the adhesive film 320 is higher than the thermosetting temperature of the adhesive film 320. Control unit 550 may control heating unit 522 such that the temperature of precoat layer 342 and precoat layer 316 is lower than the temperature at which metal bonding layer 154 and metal bonding layer 156 are formed.
　制御部５５０は、接着フィルム３２０が熱硬化して絶縁層１２０が形成されると、駆動部５４０を制御して、ヘッド５３０を上昇させる。これにより、押圧部材５３４がステージ５２０から離間する。 When the adhesive film 320 is thermally cured and the insulating layer 120 is formed, the control unit 550 controls the driving unit 540 to raise the head 530. As a result, the pressing member 534 is separated from the stage 520.
　制御部５５０は、押圧部材５３４とステージ５２０とを離間させた後、接着フィルム３２０が熱硬化して絶縁層１２０が形成されたワーク３００を加熱して、電極パッド１１４とバンプ１４２との間に金属結合層１５４を形成してよい。また、電極パッド１１６とバンプ１６２との間に金属結合層１５６を形成してよい。 The controller 550 separates the pressing member 534 and the stage 520 and then heats the workpiece 300 on which the insulating film 120 is formed by the thermosetting of the adhesive film 320, so that the gap between the electrode pad 114 and the bump 142 is increased. A metal bonding layer 154 may be formed. Further, a metal bonding layer 156 may be formed between the electrode pad 116 and the bump 162.
　制御部５５０は、金属結合層１５４および金属結合層１５６を形成する工程と、接着フィルム３２０を熱硬化させる工程とで、ステージ５２０の温度が異なるように、加熱部５２２を制御してよい。制御部５５０は、ワーク３００の温度が所定の温度範囲に収まるように、加熱部５２２を制御してよい。このとき、制御部５５０は、プリコート層３４２およびプリコート層３１６の温度が、金属結合層１５４および金属結合層１５６が形成される温度より高くなるように、加熱部５２２を制御してよい。 The control unit 550 may control the heating unit 522 so that the temperature of the stage 520 is different between the step of forming the metal bonding layer 154 and the metal bonding layer 156 and the step of thermosetting the adhesive film 320. The control unit 550 may control the heating unit 522 so that the temperature of the workpiece 300 is within a predetermined temperature range. At this time, the control unit 550 may control the heating unit 522 so that the temperature of the precoat layer 342 and the precoat layer 316 is higher than the temperature at which the metal bonding layer 154 and the metal bonding layer 156 are formed.
　これにより、実装装置５１０は、実装体１００を製造することができる。また、押圧部材５３４がステージ５２０から離間した状態で、金属結合層１５４および金属結合層１５６を形成することができる。その結果、押圧部材５３４の劣化を抑制することができる。 Thereby, the mounting apparatus 510 can manufacture the mounting body 100. Further, the metal bonding layer 154 and the metal bonding layer 156 can be formed in a state where the pressing member 534 is separated from the stage 520. As a result, deterioration of the pressing member 534 can be suppressed.
　なお、本実施形態において、実装装置５１０が、接着フィルム３２０を熱硬化する工程と、金属結合層１５４および金属結合層１５６を形成する工程とを実施する場合について説明した。しかし、実装装置５１０は、これに限定されない。例えば、実装装置５１０が、接着フィルム３２０を熱硬化する工程を実施して、実装装置５１０とは異なる装置が、金属結合層１５４および金属結合層１５６を形成する工程を実施してもよい。金属結合層１５４および金属結合層１５６を形成する工程を実施する装置としては、リフロー装置を例示できる。 In the present embodiment, the case where the mounting apparatus 510 performs the process of thermally curing the adhesive film 320 and the process of forming the metal bonding layer 154 and the metal bonding layer 156 has been described. However, the mounting apparatus 510 is not limited to this. For example, the mounting apparatus 510 may perform the process of thermally curing the adhesive film 320, and the apparatus different from the mounting apparatus 510 may perform the process of forming the metal bonding layer 154 and the metal bonding layer 156. As an apparatus for performing the step of forming the metal bonding layer 154 and the metal bonding layer 156, a reflow apparatus can be exemplified.
　バンプのピッチが８５μｍであるＩＣを、評価用素子（ＴＥＧ）として用意した。ＩＣの大きさは６．３ｍｍ×６．３ｍｍであった。ＩＣは、３個用意した。評価用素子のバンプは、２０μｍのＣｕ電極の表面に、リフローにより１５μｍのＳｎ－２．５Ａｇをプリコートして作製した。ＩＣ１個あたり２７２個のバンプを作製した。電極パッドのピッチが８５μｍである回路基板を、評価用素子（ＴＥＧ）として用意した。評価用素子の電極パッドは、Ｎｉ電極の表面にＡｕをめっきして作製した。回路基板の大きさは３８ｍｍ×３８ｍｍであった。ＮＣＦ（Ｎｏｎ　Ｃｏｎｄｕｃｔｉｖｅ　Ｆｉｌｍ）の一例として、Ｂ１４－４（ソニーケミカル＆インフォメーションデバイス株式会社）を用意した。 An IC having a bump pitch of 85 μm was prepared as an evaluation element (TEG). The size of the IC was 6.3 mm × 6.3 mm. Three ICs were prepared. The bump of the evaluation element was prepared by pre-coating 15 μm Sn-2.5Ag on the surface of a 20 μm Cu electrode by reflow. 272 bumps were produced per IC. A circuit board having an electrode pad pitch of 85 μm was prepared as an evaluation element (TEG). The electrode pad of the evaluation element was produced by plating Au on the surface of the Ni electrode. The size of the circuit board was 38 mm × 38 mm. B14-4 (Sony Chemical & Information Device Co., Ltd.) was prepared as an example of NCF (Non Conductive Film).
　Ｂ１４－４を７ｍｍ×７ｍｍの大きさに切断して、３枚のＮＣＦを用意した。３枚のＮＣＦを回路基板の電極パッドが形成された面に貼り付けた。ＩＣと回路基板とを位置合わせして、３枚のＮＣＦのそれぞれの上にＩＣを配置した。回路基板と３個のＩＣとを押圧しながら加熱して、回路基板に３個のＩＣを仮圧着した。仮圧着の条件は、温度が１００℃、圧力が３ｋｇｆに設定した。圧着時間は、１秒間に設定した。 B14-4 was cut into a size of 7 mm × 7 mm to prepare three NCFs. Three NCFs were attached to the surface of the circuit board where the electrode pads were formed. The IC and the circuit board were aligned, and the IC was placed on each of the three NCFs. The circuit board and the three ICs were heated while being pressed to temporarily press-bond the three ICs to the circuit board. Temporary pressure bonding conditions were set to a temperature of 100 ° C. and a pressure of 3 kgf. The crimping time was set to 1 second.
　仮圧着後の回路基板を押圧しながら加熱して、回路基板に３個のＩＣを本圧着した。本圧着の条件は、温度が１８０℃、圧力が２ＭＰａに設定した。圧着時間は、２０秒に設定した。本圧着によりＢ１４－４を熱硬化させた。本圧着後の回路基板をピーク温度が２６５℃の条件でリフローして、Ｓｎ－２．５Ａｇを溶融させた。リフローの時間は、３００秒に設定した。以上の工程により、回路基板に３個のＩＣを実装した。 The circuit board after provisional pressure bonding was heated while pressing, and three ICs were finally pressure bonded to the circuit board. The conditions for the main pressure bonding were set to a temperature of 180 ° C. and a pressure of 2 MPa. The crimping time was set to 20 seconds. B14-4 was thermoset by main compression. The circuit board after the main pressure bonding was reflowed under the condition of a peak temperature of 265 ° C. to melt Sn-2.5Ag. The reflow time was set to 300 seconds. Through the above steps, three ICs were mounted on the circuit board.
　実装されたＩＣのバンプと、回路基板の電極パッドとの導通試験を実施した。導通試験は、ＩＣ１個当り４０個のバンプについて実施した。導通試験は、４端子方法で実施した。３個のＩＣのすべてにおいて、接続不良は発生しなかった。 ¡Continuity test between mounted IC bump and circuit board electrode pad. The continuity test was performed on 40 bumps per IC. The continuity test was carried out by a four-terminal method. In all three ICs, connection failure did not occur.
　接続信頼性を確認する目的で、吸湿リフロー試験、プレッシャクッカ試験（ＰＣＴ）および温度サイクル試験（ＴＣＴ）を実施した。各試験後、ＩＣ１個当り４０個のバンプについて、導通試験を実施した。導通試験は、４端子方法で実施した。 For the purpose of confirming connection reliability, a moisture absorption reflow test, a pressure cooker test (PCT), and a temperature cycle test (TCT) were conducted. After each test, a continuity test was performed on 40 bumps per IC. The continuity test was carried out by a four-terminal method.
　吸湿リフロー試験は、ＪＥＤＥＣ（Ｊｏｉｎｔ　Ｅｌｅｃｔｒｏｎ　Ｄｅｖｉｃｅ　Ｅｎｇｉｎｅｅｒｉｎｇ　Ｃｏｕｎｃｉｌ）のＬｅｖｅｌ２ａの条件で実施した。吸湿リフロー試験の結果、接続不良は発生しなかった。 The moisture absorption reflow test was conducted under the condition of Level 2a of JEDEC (Joint Electron Engineering Engineering Council). As a result of the moisture absorption reflow test, no connection failure occurred.
　プレッシャクッカ試験は、圧力が０．２３Ｍｐａ、温度が１３０℃、湿度が８５％ＲＨの条件で実施した。プレッシャクッカ試験は２００時間まで試験したが、接続不良は発生しなかった。 The pressure cooker test was performed under the conditions of a pressure of 0.23 Mpa, a temperature of 130 ° C., and a humidity of 85% RH. The pressure cooker test was conducted for up to 200 hours, but no connection failure occurred.
　温度サイクル試験は、－５５℃の低温条件と、１２５℃の高温条件とを１５分間隔で繰り返し実施した。温度サイクル試験は１０００サイクルまで試験したが、接続不良は発生しなかった。 In the temperature cycle test, a low temperature condition of −55 ° C. and a high temperature condition of 125 ° C. were repeated at 15-minute intervals. The temperature cycle test was conducted up to 1000 cycles, but no connection failure occurred.
　以上、本発明を実施の形態を用いて説明したが、本発明の技術的範囲は上記実施の形態に記載の範囲には限定されない。上記実施の形態に、多様な変更または改良を加えることが可能であることが当業者に明らかである。その様な変更または改良を加えた形態も本発明の技術的範囲に含まれ得ることが、請求の範囲の記載から明らかである。 As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.
　請求の範囲、明細書、および図面中において示した装置、システム、プログラム、および方法における動作、手順、ステップ、および段階等の各処理の実行順序は、特段「より前に」、「先立って」等と明示しておらず、また、前の処理の出力を後の処理で用いるのでない限り、任意の順序で実現しうることに留意すべきである。請求の範囲、明細書、および図面中の動作フローに関して、便宜上「まず、」、「次に、」等を用いて説明したとしても、この順で実施することが必須であることを意味するものではない。 The execution order of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior”. It should be noted that they can be implemented in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for the sake of convenience, it means that it is essential to carry out in this order. is not.
　１００　実装体、　１１０　基板、　１１４　電極パッド、　１１６　電極パッド、　１２０　絶縁層、　１４０　電子部品、　１４２　バンプ、　１５４　金属結合層、　１５６　金属結合層、　１６０　電子部品、　１６２　バンプ、　３００　ワーク、　３２０　接着フィルム、　３４２　プリコート層、　３１６　プリコート層、　５１０　実装装置、　５２０　ステージ、　５２２　加熱部、　５３０　ヘッド、　５３２　ヘッド本体、　５３４　押圧部材、　５３６　保持部材、　５４０　駆動部、　５５０　制御部 100 mounting body, 110 substrate, 114 electrode pad, 116 electrode pad, 120 insulating layer, 140 electronic component, 142 bump, 154 metal bonding layer, 156 metal bonding layer, 160 electronic component, 162 bump, 300 work, 320 adhesive film, 342 precoat layer, 316 precoat layer, 510 mounting device, 520 stage, 522 heating unit, 530 head, 532 head body, 534 pressing member, 536 holding member, 540 drive unit, 550 control unit

Claims (7)

  1. 　基板の電極および電子部品の電極の少なくとも一方の表面に半田が設けられており、前記基板、絶縁性接着層、および前記電子部品をこの順で積層させる積層段階と、
    　前記基板に対して前記電子部品を押圧することにより、前記電子部品の前記電極と前記基板の前記電極とを接触させる押圧段階と、
    　前記絶縁性接着層を第１の温度に加熱することにより、前記絶縁性接着層を熱硬化させる熱硬化段階と、
    　前記半田を第２の温度に加熱することにより、前記基板の前記電極と前記電子部品の前記電極との間に、前記半田を含む金属結合層を形成する金属結合段階と
    　を備える実装体の製造方法。     Solder is provided on at least one surface of the electrode of the substrate and the electrode of the electronic component, and a laminating step of laminating the substrate, the insulating adhesive layer, and the electronic component in this order,
    A pressing step of bringing the electrode of the electronic component into contact with the electrode of the substrate by pressing the electronic component against the substrate;
    A thermosetting step of thermosetting the insulating adhesive layer by heating the insulating adhesive layer to a first temperature;
    Manufacturing a mounting body comprising: a metal bonding step of forming a metal bonding layer including the solder between the electrode of the substrate and the electrode of the electronic component by heating the solder to a second temperature. Method.
  2. 　前記押圧段階は、ヘッドに保持されている弾性体で、前記電子部品を前記基板に対して押圧する段階を有する
    　請求項１に記載の実装体の製造方法。     The method of manufacturing a mounting body according to claim 1, wherein the pressing step includes a step of pressing the electronic component against the substrate with an elastic body held by a head.
  3. 　前記押圧段階は、前記弾性体で、複数の前記電子部品を前記基板に対して同時に押圧する段階を有する
    　請求項２に記載の実装体の製造方法。     The manufacturing method of the mounting body according to claim 2, wherein the pressing step includes a step of simultaneously pressing the plurality of electronic components against the substrate with the elastic body.
  4. 　前記基板の前記電極および前記電子部品の前記電極の少なくとも一方に、半田をプリコートする段階をさらに備える
    　請求項１から３の何れか一項に記載の実装体の製造方法。     The manufacturing method of the mounting body as described in any one of Claim 1 to 3 further equipped with the step which precoats the solder to at least one of the said electrode of the said board | substrate, and the said electrode of the said electronic component.
  5. 　基板の電極および電子部品の電極の少なくとも一方の表面に半田が設けられており、前記基板、絶縁性接着層、および前記電子部品がこの順で積層された後、前記基板に対して前記電子部品を押圧することにより、前記絶縁性接着層を貫通させて前記電子部品の前記電極と前記基板の前記電極とを接触させる押圧部と、
    　前記絶縁性接着層を第１の温度に加熱することにより、前記絶縁性接着層を熱硬化させた後、前記半田を第２の温度に加熱することにより、前記基板の前記電極と前記電子部品の前記電極との間に、前記半田を含む金属結合層を形成させる加熱制御部と
    を備える実装装置。     Solder is provided on at least one surface of the electrode of the substrate and the electrode of the electronic component, and after the substrate, the insulating adhesive layer, and the electronic component are laminated in this order, the electronic component is applied to the substrate A pressing portion that penetrates the insulating adhesive layer to contact the electrode of the electronic component and the electrode of the substrate;
    By heating the insulating adhesive layer to a first temperature to thermally cure the insulating adhesive layer, and then heating the solder to a second temperature, the electrode of the substrate and the electronic component And a heating control unit for forming a metal bonding layer containing the solder between the electrodes.
  6. 　前記押圧部は、弾性体を有し、前記弾性体で前記電子部品を前記基板に対して押圧する請求項５に記載の実装装置。 The mounting device according to claim 5, wherein the pressing portion includes an elastic body and presses the electronic component against the substrate with the elastic body.
  7. 　前記押圧部は、前記弾性体で複数の前記電子部品を前記基板に対して同時に押圧する請求項６に記載の実装装置。 The mounting device according to claim 6, wherein the pressing portion simultaneously presses the plurality of electronic components against the substrate with the elastic body.
PCT/JP2011/000071 2010-01-22 2011-01-11 Mounted body production method and mounting device WO2011089862A1 (en)

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JP2010012275A JP2011151259A (en) 2010-01-22 2010-01-22 Method of manufacturing packaging body and device of packaging

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2675252A1 (en) * 2012-06-13 2013-12-18 Polska Wytwornia Papierow Wartosciowych S.A. A method for mounting an electronic element on a substrate with conductive paths sensitive to high temperature

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013048496A1 (en) 2011-09-30 2013-04-04 Intel Corporation Method for handling very thin device wafers
JP6140531B2 (en) * 2013-05-30 2017-05-31 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． Semiconductor chip bonding apparatus and semiconductor chip bonding method
US9996788B2 (en) 2014-08-13 2018-06-12 R.R. Donnelley & Sons Company Method and apparatus for producing an electronic device
CN106575392B (en) 2014-08-19 2021-01-26 克里奥瓦克有限公司 Apparatus and method for monitoring packages during transit
WO2017120226A1 (en) 2016-01-04 2017-07-13 R.R. Donnelley & Sons Company Multiple detector apparatus and method for monitoring an environment
US20170203558A1 (en) * 2016-01-15 2017-07-20 R.R. Donnelley & Sons Company Apparatus and method for placing components on an electronic circuit
US9785881B2 (en) 2016-02-15 2017-10-10 R.R. Donnelley & Sons Company System and method for producing an electronic device
JP6690308B2 (en) * 2016-03-08 2020-04-28 日立化成株式会社 Method for manufacturing semiconductor device
US10342136B2 (en) 2016-09-23 2019-07-02 R.R. Donnelley & Sons Company Monitoring device
US10445692B2 (en) 2017-03-06 2019-10-15 Cryovac, Llc Monitoring device and method of operating a monitoring device to transmit data
US11240916B2 (en) 2017-05-31 2022-02-01 Cryovac, Llc Electronic device, method and apparatus for producing an electronic device, and composition therefor
WO2022113186A1 (en) * 2020-11-25 2022-06-02 株式会社Fuji Electric circuit forming method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10112478A (en) * 1996-10-04 1998-04-28 Denso Corp Ball grid array semiconductor device and its mounting method
JP2004047773A (en) * 2002-07-12 2004-02-12 Matsushita Electric Ind Co Ltd Method of manufacturing mounting board
WO2007080956A1 (en) * 2006-01-13 2007-07-19 Sony Chemical & Information Device Corporation Pressure bonding device and mounting method
JP2008135410A (en) * 2005-03-14 2008-06-12 Matsushita Electric Ind Co Ltd Method for mounting electronic component, circuit board having electronic component mounted thereon, and electronic equipment having circuit board mounted thereon

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10112478A (en) * 1996-10-04 1998-04-28 Denso Corp Ball grid array semiconductor device and its mounting method
JP2004047773A (en) * 2002-07-12 2004-02-12 Matsushita Electric Ind Co Ltd Method of manufacturing mounting board
JP2008135410A (en) * 2005-03-14 2008-06-12 Matsushita Electric Ind Co Ltd Method for mounting electronic component, circuit board having electronic component mounted thereon, and electronic equipment having circuit board mounted thereon
WO2007080956A1 (en) * 2006-01-13 2007-07-19 Sony Chemical & Information Device Corporation Pressure bonding device and mounting method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2675252A1 (en) * 2012-06-13 2013-12-18 Polska Wytwornia Papierow Wartosciowych S.A. A method for mounting an electronic element on a substrate with conductive paths sensitive to high temperature

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