JP5925460B2 - Film adhesive and method for manufacturing semiconductor device using the same - Google Patents
Film adhesive and method for manufacturing semiconductor device using the same Download PDFInfo
- Publication number
- JP5925460B2 JP5925460B2 JP2011213099A JP2011213099A JP5925460B2 JP 5925460 B2 JP5925460 B2 JP 5925460B2 JP 2011213099 A JP2011213099 A JP 2011213099A JP 2011213099 A JP2011213099 A JP 2011213099A JP 5925460 B2 JP5925460 B2 JP 5925460B2
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- weight
- substrate
- semiconductor chip
- wiring pattern
- connection terminal
- Prior art date
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- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 79
- 239000000853 adhesive Substances 0.000 title claims description 71
- 230000001070 adhesive effect Effects 0.000 title claims description 70
- 238000000034 method Methods 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 56
- 229920005989 resin Polymers 0.000 claims description 43
- 239000011347 resin Substances 0.000 claims description 43
- 229920000647 polyepoxide Polymers 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 40
- 239000003822 epoxy resin Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 239000003795 chemical substances by application Substances 0.000 claims description 24
- 239000007787 solid Substances 0.000 claims description 18
- 238000002156 mixing Methods 0.000 claims description 16
- 239000011256 inorganic filler Substances 0.000 claims description 15
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 15
- 238000003825 pressing Methods 0.000 claims description 11
- 238000000354 decomposition reaction Methods 0.000 claims description 6
- 150000002460 imidazoles Chemical class 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 239000000047 product Substances 0.000 description 25
- 238000005259 measurement Methods 0.000 description 22
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 17
- 239000011521 glass Substances 0.000 description 13
- 239000010931 gold Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229920001187 thermosetting polymer Polymers 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000005304 joining Methods 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000004840 adhesive resin Substances 0.000 description 4
- 229920006223 adhesive resin Polymers 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000002966 varnish Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 241000132023 Bellis perennis Species 0.000 description 2
- 235000005633 Chrysanthemum balsamita Nutrition 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004643 cyanate ester Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- OAMZXMDZZWGPMH-UHFFFAOYSA-N ethyl acetate;toluene Chemical compound CCOC(C)=O.CC1=CC=CC=C1 OAMZXMDZZWGPMH-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000003094 microcapsule Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011354 acetal resin Substances 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
- Dicing (AREA)
Description
本発明は、フィルム状接着剤およびこれを用いた半導体装置の製造方法に関する。 The present invention relates to a film adhesive and a method for manufacturing a semiconductor device using the same.
近年の電子機器の小型化および機能複合化の進展に伴って、１つの半導体パッケージ内に複数の半導体チップを搭載した形態が広く用いられるようになってきている。搭載する形態としては、基板上に２次元的に複数のチップを配置する方法よりも、チップを３次元的に積層してワイヤボンディングで電気的に接続することによって半導体パッケージの小型化が可能となるいわゆるチップスタック技術が広く適用されている。このチップスタックでは上側のチップと下側のチップを接着剤によって接着しており、ペースト状またはフィルム状の接着剤が使用されている。しかし、ペースト状の接着剤は高流動性であるために、接着時にはみ出した接着剤によってチップ電極が汚染される可能性があることから、フィルム状の接着剤を使用するほうが一般的である。 With the recent progress in downsizing and functional compounding of electronic devices, a form in which a plurality of semiconductor chips are mounted in one semiconductor package has been widely used. As a mounting form, it is possible to reduce the size of a semiconductor package by stacking chips three-dimensionally and electrically connecting them by wire bonding, rather than a method of arranging a plurality of chips two-dimensionally on a substrate. The so-called chip stack technology is widely applied. In this chip stack, an upper chip and a lower chip are bonded with an adhesive, and a paste or film adhesive is used. However, since the paste adhesive has a high fluidity, the chip electrode may be contaminated by the adhesive that protrudes at the time of bonding. Therefore, it is more common to use a film adhesive.
一方、更なる小型化、薄型化および高速伝送に対応した半導体チップ接続技術として、突出した接続端子(バンプ)を有する半導体チップと基板電極とを直接電気的に接続するフリップチップ接続技術が注目されている。フリップチップ接続技術を用いると、１）ワイヤボンディングのようにワイヤのループ高さを考慮する必要がなくなること、２）基板電極をチップ搭載領域にも配置できること、といった特徴から半導体パッケージの小型化、薄型化が可能になり、先に述べたチップスタック技術への適用が検討されている。フリップチップ接続技術としては、半導体チップに形成されたはんだバンプと基板側の配線パターンを電気的に接続するＣ４方式（例えば非特許文献１参照）、異方導電性接着樹脂を用いて、半導体チップに形成されたバンプと基板側の配線パターンを導電粒子を介して電気的に接続する方法（例えば非特許文献２参照）、半導体チップに形成されたバンプと基板側の配線パターンを接触させた状態で熱硬化性接着樹脂を硬化させ、その収縮力によって接触状態を保つ方法(例えば非特許文献３参照)、半導体チップに形成されたバンプと基板側の配線パターンを位置合わせした後、半導体チップ側から超音波振動を印加して金属接合させる方法（例えば非特許文献４参照）などが知られている。これらの中で、超音波振動を利用した金属接合によるフリップチップ接続方式は、１）低温(常温〜２００℃)でバンプと配線パターンを金属接合させることが可能であること、２）接続に要する時間が１秒以下であること、といった特徴を有しており、接続温度の低温化による熱応力の低減、金属接合部の形成による高接続信頼性および短時間接続による高生産性を実現する方式として注目されている。これまでにＳＡＷ（ＳｕｒｆａｃｅＡｃｏｕｓｔｉｃ Ｗａｖｅ）フィルタなどの小チップをセラミック基板にフリップチップ接続する際に適用された例はあるが（例えば特許文献１参照）、半導体チップと基板の間を樹脂で充填するアンダーフィルが不要な場合に限られていた。一方、上記の利点を活かして、より大型のチップと樹脂基板の接続への適用も検討されているが、接続信頼性確保のためにはアンダーフィルが必須である。しかし、チップと基板を接続した後に、液状樹脂を充填する方式では長時間を要することから、生産性の低下につながるおそれがあった。 On the other hand, flip chip connection technology that directly connects a semiconductor chip having protruding connection terminals (bumps) and a substrate electrode as a semiconductor chip connection technology corresponding to further miniaturization, thinning, and high-speed transmission has attracted attention. ing. Using flip chip connection technology, 1) it is not necessary to consider the wire loop height as in wire bonding, and 2) the size of the semiconductor package can be reduced due to the fact that the substrate electrode can also be arranged in the chip mounting area. Thinning is possible, and application to the above-described chip stack technology is being studied. As a flip chip connection technique, a semiconductor chip is formed by using a C4 method (for example, see Non-Patent Document 1) for electrically connecting a solder bump formed on a semiconductor chip and a wiring pattern on the substrate side, and using an anisotropic conductive adhesive resin. A method of electrically connecting the bumps formed on the substrate and the wiring pattern on the substrate side via conductive particles (see, for example, Non-Patent Document 2), a state in which the bumps formed on the semiconductor chip and the wiring pattern on the substrate side are in contact with each other The method of curing the thermosetting adhesive resin and maintaining the contact state by the shrinkage force (for example, see Non-Patent Document 3), after aligning the bump formed on the semiconductor chip and the wiring pattern on the substrate side, There is known a method of applying ultrasonic vibration from a metal and joining the metal (for example, see Non-Patent Document 4). Among these, the flip chip connection method by metal bonding using ultrasonic vibration is 1) that bumps and wiring patterns can be metal bonded at low temperature (room temperature to 200 ° C.), and 2) connection is required. Features that the time is 1 second or less, a method that realizes high thermal reliability by reducing the thermal stress by reducing the connection temperature, high connection reliability by forming metal joints, and high productivity by short-time connection It is attracting attention as. Although there has been an example applied to flip chip connection of a small chip such as a SAW (Surface Acoustic Wave) filter to a ceramic substrate (see, for example, Patent Document 1), an underfill that fills a space between the semiconductor chip and the substrate with resin. It was limited to cases where no fill was required. On the other hand, taking advantage of the above-described advantages, application to the connection of a larger chip and a resin substrate is also being studied, but underfill is essential for ensuring connection reliability. However, the method of filling the liquid resin after the chip and the substrate are connected requires a long time, which may lead to a decrease in productivity.
薄型パッケージ内に複数のチップを積層するために、チップの厚みが薄くなっており、１００μｍ以下のチップを用いる必要が出てきている。しかし、熱硬化性接着剤を用いて樹脂基板上に加熱・加圧してチップを搭載するために、常温に戻した時にチップの反りが発生し、チップをさらに積層できなくなるという課題があった。この課題を解決するためにチップ搭載温度の低温化が要求されている。しかし、一般にフィルム状接着剤では加熱時の溶融粘度がペーストまたは液状の接着剤よりも高くなるために、低温ではチップ表面に樹脂が充分なじまず(濡れ性が低く)、接着力が低下するという課題があった。また、フリップチップ接続方式にフィルム状接着剤を用いることによって、チップと基板を接続する工程において、アンダーフィルも形成できることから工程の簡略化が可能であるが、超音波振動を利用したフリップチップ接続方式における低温・短時間接続条件では、バンプと基板電極間からの樹脂排除が不充分となって、接続できない場合があった。 In order to stack a plurality of chips in a thin package, the thickness of the chip is reduced, and it is necessary to use a chip of 100 μm or less. However, since a chip is mounted by heating and pressing on a resin substrate using a thermosetting adhesive, there is a problem that the chip is warped when the temperature is returned to room temperature, and the chip cannot be further laminated. In order to solve this problem, it is required to lower the chip mounting temperature. However, film adhesives generally have a higher melt viscosity when heated than pastes or liquid adhesives, so at low temperatures the resin does not sufficiently adhere to the chip surface (low wettability) and adhesive strength decreases. There was a problem. In addition, by using a film adhesive for the flip chip connection method, it is possible to simplify the process because an underfill can be formed in the process of connecting the chip and the substrate, but flip chip connection using ultrasonic vibration is possible. Under low temperature and short time connection conditions in the system, the resin could not be removed from between the bump and the substrate electrode, and connection could not be made.
これらの課題を解決するためにはフィルム状接着剤の溶融粘度を低減することが有効である。しかし、半導体用接着剤として広く用いられているエポキシ樹脂などの熱硬化性接着剤の溶融粘度をずり粘弾性によって測定する場合、測定時の昇温過程において硬化反応が開始してしまい、設定温度での溶融粘度を正確に測定することが困難であった。また、超音波振動を使用したフリップチップ接続方式などでは接続時間が１ｓ以下と短いために、測定に数分を要するずり粘弾性測定では、実際のチップ接続時の樹脂粘度挙動を正確に把握することが困難であった。 In order to solve these problems, it is effective to reduce the melt viscosity of the film adhesive. However, when the melt viscosity of thermosetting adhesives such as epoxy resins that are widely used as adhesives for semiconductors is measured by shear viscoelasticity, the curing reaction starts during the temperature rising process during measurement, and the set temperature It was difficult to accurately measure the melt viscosity at In addition, since the connection time is as short as 1 s or less in the flip chip connection method using ultrasonic vibration, the resin viscosity behavior during actual chip connection is accurately grasped in shear viscoelasticity measurement that requires several minutes for measurement. It was difficult.
そこで、本発明では粘度評価基準として、平行板間にはさんだフィルム状接着剤の初期面積と加熱・加圧後の面積の比を流れ量として定義し、この流れ量を増大させることによって、チップ搭載温度の低温化への対応および超音波振動を利用したフリップチップ接続方式への対応が可能となるフィルム状接着剤およびそれを用いた半導体装置の製造方法を提供することを目的としている。 Therefore, in the present invention, as a viscosity evaluation standard, the ratio of the initial area of the film adhesive sandwiched between parallel plates and the area after heating and pressurization is defined as the flow rate, and by increasing this flow rate, the chip It is an object of the present invention to provide a film adhesive that can cope with a reduction in mounting temperature and a flip chip connection method using ultrasonic vibration, and a method of manufacturing a semiconductor device using the same.
請求項１に記載の本発明は、（ａ）重量平均分子量１００００以下で常温（２５℃）において固形である樹脂と、（ｂ）絶縁性球状無機フィラーと、（ｃ）エポキシ樹脂（但し、（ａ）成分がエポキシ樹脂の場合、（ｃ）成分は（ａ）成分とは異なるエポキシ樹脂である）と、（ｄ）硬化剤とを含有し、５０〜１５０℃のいずれかの温度において加熱・加圧した場合の平行板間にはさんだフィルム状接着剤の初期面積と加熱・加圧後の面積との比である流れ量が１．５以上であり、（ｄ）硬化剤は、１５０℃以上の融点または分解点を有するイミダゾール類と、マイクロカプセル化された硬化剤とを含有し、（ａ）重量平均分子量１００００以下で常温(２５℃)において固形である樹脂の配合量が（ａ）成分、（ｂ）成分及び（ｃ）成分の総量１００重量部に対して５〜５０重量部であり、（ｂ）絶縁性球状無機フィラーの配合量が当該総量１００重量部に対して２５〜８０重量％であり、（ｃ）エポキシ樹脂の配合量が当該総量１００重量部に対して１０〜７０重量であり、１５０℃以上の融点または分解点を有するイミダゾール類及びマイクロカプセル化された硬化剤の配合量がそれぞれ（ｃ）エポキシ樹脂１００重量部に対して０．１〜４０重量部であることを特徴とするフィルム状接着剤である。
請求項２に記載の本発明は、請求項１に記載のフィルム状接着剤を配線パターンの形成された基板に貼り付ける工程、突出した接続端子を有する半導体チップの接続端子と基板の配線パターンとを位置合わせする工程、加熱・加圧した状態で超音波振動を印加することによって半導体チップの突出した接続端子と基板の配線パターンを金属接合によって電気的に接続する工程、フィルム状接着剤の硬化反応率を８０％以上にするために加熱処理を行なう工程を備えることを特徴とする半導体装置の製造方法である。
請求項３に記載の本発明は、請求項１に記載のフィルム状接着剤を突出した接続端子を有する半導体チップの接続端子が形成された面に貼り付ける工程、半導体チップの接続端子と基板の配線パターンとを位置合わせする工程、加熱・加圧した状態で超音波振動を印加することによって半導体チップの突出した接続端子と基板の配線パターンを金属接合によって電気的に接続する工程、フィルム状接着剤の硬化反応率を８０％以上にするために加熱処理を行なう工程を備えることを特徴とする半導体装置の製造方法である。
請求項４に記載の本発明は、請求項１に記載のフィルム状接着剤を突出した接続端子を有する半導体ウエハに貼り付ける工程、ダイシングによって個片の半導体チップに分割する工程、半導体チップの接続端子と基板の配線パターンとを位置合わせする工程、加熱・加圧した状態で超音波振動を印加することによって半導体チップの突出した接続端子と基板の配線パターンを金属接合によって電気的に接続する工程、フィルム状接着剤の硬化反応率を８０％以上にするために加熱処理を行なう工程を備えることを特徴とする半導体装置の製造方法である。
The present invention described in claim 1 includes (a) a resin having a weight average molecular weight of 10,000 or less and a solid at room temperature (25 ° C.), (b) an insulating spherical inorganic filler, (c) an epoxy resin (provided that ( a) If the component is an epoxy resin, and component (c) is a different epoxy resin as component (a)), containing the (d) a curing agent, heating at any temperature 5 0 to 150 ° C. The flow rate, which is the ratio of the initial area of the film adhesive sandwiched between the parallel plates when pressed and the area after heating and pressing, is 1.5 or more, and ( d) the curing agent is 150 (A) The blending amount of the resin containing a imidazole having a melting point or decomposition point of not less than 0 ° C. and a microencapsulated curing agent and having a weight average molecular weight of 10,000 or less and being solid at room temperature (25 ° C.) is (a ) Component, (b) component and (c) component total 5 to 50 parts by weight with respect to 100 parts by weight, (b) the blending amount of the insulating spherical inorganic filler is 25 to 80% by weight with respect to 100 parts by weight of the total amount, and (c) the blending of the epoxy resin The amount of the imidazole having a melting point or decomposition point of 150 ° C. or higher and a microencapsulated curing agent is 100 parts by weight of (c) epoxy resin with respect to 100 parts by weight of the total amount. It is 0.1-40 weight part with respect to a film-like adhesive agent characterized by the above-mentioned .
The present invention described in 請 Motomeko 2, step of attaching a film-like adhesive according to claim 1 on a substrate formed of a wiring pattern, the connection terminals and the substrate of the semiconductor chip having connection terminals projecting wiring pattern A step of electrically connecting the protruding connection terminal of the semiconductor chip and the wiring pattern of the substrate by metal bonding by applying ultrasonic vibration in a heated / pressurized state, of the film adhesive A method for manufacturing a semiconductor device, comprising a step of performing a heat treatment so that a curing reaction rate is 80% or more.
According to a third aspect of the present invention, there is provided a process of attaching the film-like adhesive according to the first aspect to a surface on which a connection terminal of a semiconductor chip having a connection terminal projecting is formed; The process of aligning the wiring pattern, the process of electrically connecting the protruding connection terminal of the semiconductor chip to the wiring pattern of the substrate by applying ultrasonic vibration in a heated and pressurized state, film-like bonding A method for manufacturing a semiconductor device, comprising a step of performing a heat treatment in order to increase the curing reaction rate of the agent to 80% or more.
According to a fourth aspect of the present invention, there is provided a step of attaching the film adhesive according to the first aspect to a semiconductor wafer having a protruding connection terminal, a step of dicing into individual semiconductor chips, and a connection of semiconductor chips A step of aligning the terminal and the wiring pattern of the substrate, a step of electrically connecting the protruding connection terminal of the semiconductor chip and the wiring pattern of the substrate by metal bonding by applying ultrasonic vibration in a heated and pressurized state A method for manufacturing a semiconductor device, comprising a step of performing a heat treatment so that the curing reaction rate of the film adhesive is 80% or more.
本発明のフィルム状接着剤を用いることによって、超音波振動を利用したフリップチップ接続方式のような低温・短時間接続条件においても、良好な金属接合部の形成が可能であり、良好な接続信頼性を実現できる。 By using the film adhesive of the present invention, it is possible to form a good metal joint even under low temperature and short time connection conditions such as a flip chip connection method using ultrasonic vibration, and good connection reliability. Can be realized.
本発明のフィルム状接着剤は、（ａ）重量平均分子量が１００００以下で常温（２５℃）において固形である樹脂、（ｂ）絶縁性球状無機フィラー、（ｃ）エポキシ樹脂、（ｄ）硬化剤を必須成分として含有することが好ましい。 The film-like adhesive of the present invention includes (a) a resin having a weight average molecular weight of 10,000 or less and a solid at room temperature (25 ° C.), (b) an insulating spherical inorganic filler, (c) an epoxy resin, and (d) a curing agent. It is preferable to contain as an essential component.
フィルム状接着剤の最低溶融粘度を示す温度は５０〜２５０℃の範囲内であることが望ましく、半導体チップへの熱履歴を低減するために、５０〜２００℃の範囲内であることがより望ましく、５０〜１６０℃の範囲内であることが特に好ましい。最低溶融粘度が２００Ｐａ・ｓ未満の場合、半導体チップを接続した後、硬化反応率を８０％以上にするためのアフターキュア処理工程において、接着剤が液状化していまい、チップと基板の間隙から流れ出してしまう恐れがある。このため、最低溶融粘度は２００Ｐａ・ｓより高いことが必要で、５００Ｐａ・ｓより高いことが望ましい。フィルム状接着剤の最低溶融粘度は市販の動的粘弾性測定装置を用いて測定することが可能であり、測定は全自動で行なわれる。所定の温度に加熱した恒温槽内で、試料を２枚の平行プレートにはさみ、片方のプレートに微小な正弦波状のひねり歪みを付加した時、他方のプレートに発生する応力と歪から弾性率および粘度を算出する。一般に測定周波数は０．５〜１０Ｈｚであり、高分子材料は粘弾性体として挙動するため、弾性成分に由来する貯蔵弾性率Ｇ’と粘性成分に由来する損失弾性率Ｇ”が得られる。この二つの値から複素弾性率Ｇ＊が（数１）で与えられる。さらに粘度をη（Ｐａ・ｓ）、測定周波数をｆ（Ｈｚ）、複素弾性率Ｇ＊（Ｐａ）とすると、粘度は（数２）で与えられる。 The temperature indicating the minimum melt viscosity of the film adhesive is preferably in the range of 50 to 250 ° C., and more preferably in the range of 50 to 200 ° C. in order to reduce the thermal history of the semiconductor chip. It is particularly preferable that the temperature be in the range of 50 to 160 ° C. When the minimum melt viscosity is less than 200 Pa · s, the adhesive is not liquefied and flows out from the gap between the chip and the substrate in the after-curing process to make the curing reaction rate 80% or more after connecting the semiconductor chips. There is a risk that. For this reason, the minimum melt viscosity needs to be higher than 200 Pa · s, and preferably higher than 500 Pa · s. The minimum melt viscosity of the film adhesive can be measured using a commercially available dynamic viscoelasticity measuring apparatus, and the measurement is performed fully automatically. When a sample is sandwiched between two parallel plates in a thermostatic chamber heated to a predetermined temperature, and a minute sinusoidal twist distortion is applied to one plate, the elastic modulus and strain are determined from the stress and strain generated on the other plate. Calculate the viscosity. Generally, the measurement frequency is 0.5 to 10 Hz, and the polymer material behaves as a viscoelastic body, so that a storage elastic modulus G ′ derived from an elastic component and a loss elastic modulus G ″ derived from a viscous component are obtained. From the two values, the complex elastic modulus G * is given by (Equation 1). Further, when the viscosity is η (Pa · s), the measurement frequency is f (Hz), and the complex elastic modulus G * (Pa), the viscosity is ( It is given by equation 2).
本発明において、粘度の評価基準として流れ量を設定する。流れ量Ａは初期フィルム面積Ｂに対して所定の圧力、温度で加熱・加圧した後のフィルム面積Ｃの比であり、（数３）で計算される。 In the present invention, the flow rate is set as a viscosity evaluation standard. The flow amount A is the ratio of the film area C after being heated and pressurized at a predetermined pressure and temperature with respect to the initial film area B, and is calculated by (Equation 3).
図１に示したように流れ量の測定は以下の手順に従って行なう。１５ｍｍ×１５ｍｍの大きさに切り出した厚さ７００μｍのガラスチップ（＃１７３７ガラス）の表面に、５ｍｍ×５ｍｍに切り出した厚さ５０μｍのフィルム状接着剤を貼り付け、さらに表面に窒化ケイ素膜が形成された厚さ５５０μｍ、大きさ１２ｍｍ×１２ｍｍのＳｉチップの窒化ケイ素膜がフィルム状接着剤に接するように重ね、加熱・加圧装置に配置する。加熱・加圧装置のステージ温度を５０℃に、ツール温度を所定の温度に設定し、５ｍｍ×５ｍｍのフィルムに対して圧力１．０ＭＰａとなる荷重（２５Ｎ）および加圧時間１．０ｓに設定して加熱・加圧する。ガラスチップを透過して観察できる加熱・加圧前のフィルム面積と加熱・加圧後のフィルム面積を画像処理によってそれぞれ測定し、流れ量を（数３）に従って算出する。ここで、例えば１００℃での流れ量という場合、ツール温度を１００℃に設定して測定したことを示す。加熱・加圧装置としては株式会社アルテクス製超音波フリップチップボンダーＳＨ−５０ＭＰを用いて、加熱・加圧時に超音波振動を印加しないで加熱・加圧を行なった。加熱・加圧時の加熱プロファイルおよび加圧プロファイルを図２に示した。加熱プロファイルは流れ量評価サンプルのガラスチップとＳｉチップの間に熱伝対を挿入して、ツール１００℃、ステージ５０℃に設定し、荷重２５Ｎ、加圧時間１．０ｓに設定して測定した。また、加圧プロファイルは株式会社昭和測器製ロードセルＭＲＤ−１ｋＮ（製品名）をステージ上に固定し荷重２５Ｎ、加圧時間１．０ｓに設定して測定した。 As shown in FIG. 1, the flow rate is measured according to the following procedure. A film adhesive of 50 μm thickness cut to 5 mm × 5 mm is pasted on the surface of a 700 μm thick glass chip (# 1737 glass) cut to a size of 15 mm × 15 mm, and a silicon nitride film is formed on the surface. The silicon nitride film of the Si chip having a thickness of 550 μm and a size of 12 mm × 12 mm is stacked so as to be in contact with the film adhesive and placed in a heating / pressurizing apparatus. The stage temperature of the heating / pressurizing device is set to 50 ° C., the tool temperature is set to a predetermined temperature, and the load (25 N) at a pressure of 1.0 MPa is applied to a 5 mm × 5 mm film and the pressing time is set to 1.0 s Then heat and pressurize. The film area before heating / pressing and the film area after heating / pressing that can be observed through the glass chip are respectively measured by image processing, and the flow amount is calculated according to (Equation 3). Here, for example, the flow rate at 100 ° C. indicates that the tool temperature was set to 100 ° C. and measured. As a heating / pressurizing apparatus, an ultrasonic flip chip bonder SH-50MP manufactured by ALTECHS Co., Ltd. was used, and heating / pressurization was performed without applying ultrasonic vibration during heating / pressurization. A heating profile and a pressing profile at the time of heating and pressing are shown in FIG. The heating profile was measured by inserting a thermocouple between the glass chip and Si chip of the flow rate evaluation sample, setting the tool at 100 ° C. and the stage at 50 ° C., setting the load to 25 N, and the pressurization time to 1.0 s. . The pressurization profile was measured with a load cell MRD-1kN (product name) manufactured by Showa Keiki Co., Ltd. fixed on the stage and set to a load of 25 N and a pressurization time of 1.0 s.
流れ量が５０〜１２５℃のいずれかの温度で１．５以上であることが必要であり、１．７以上であることがより好ましく、１．８以上であることが特に望ましい。流れ量が１．５未満の場合には、超音波振動を利用したフリップチップ接続方式における低温・短時間接続条件において、バンプと基板電極間からの樹脂排除が不充分となって、接続できなくなる恐れがある。また、３．０以上になると流れすぎてしまいボイドが生じるおそれがあるので３．０以下とすることが好ましい。 The flow rate needs to be 1.5 or more at any temperature of 50 to 125 ° C., more preferably 1.7 or more, and particularly preferably 1.8 or more. When the flow rate is less than 1.5, the resin cannot be removed between the bump and the substrate electrode under the low temperature and short time connection conditions in the flip chip connection method using ultrasonic vibration, making it impossible to connect. There is a fear. Moreover, since it will flow too much and a void may arise when it becomes 3.0 or more, it is preferable to set it as 3.0 or less.
フィルム状接着剤の硬化物の２５〜２６０℃における平均線膨張係数は２００×１０−６／℃以下であることが必要で、１５０×１０−６／℃以下であることが望ましく、１００×１０−６／℃以下であることがより望ましい。２００×１０−６／℃を超えて大きいと接続信頼性が低下する恐れがある。 The average linear expansion coefficient at 25 to 260 ° C. of the cured product of the film adhesive is required to be 200 × 10 −6 / ° C. or less, desirably 150 × 10 −6 / ° C. or less, and 100 × 10 6. More preferably, it is −6 / ° C. or lower. If it exceeds 200 × 10 −6 / ° C., the connection reliability may be reduced.
本発明において使用する（ａ）重量平均分子量が１００００以下で常温(２５℃)において固形である樹脂としては、例えばエポキシ樹脂、ポリイミド樹脂、ポリアミド樹脂、ポリカルボジイミド樹脂、フェノール樹脂、シアネートエステル樹脂、アクリル樹脂、ポリエステル樹脂、ポリエチレン樹脂、ポリエーテルスルホン樹脂、ポリエーテルイミド樹脂、ポリビニルアセタール樹脂、ウレタン樹脂、アクリルゴム等が挙げられ、その中でも耐熱性およびフィルム形成性に優れるエポキシ樹脂、ポリイミド樹脂、シアネートエステル樹脂、ポリカルボジイミド樹脂等が望ましく、エポキシ樹脂、ポリイミド樹脂がより好ましい。これらは単独または２種以上の混合体や共重合体として使用することもできる。 Examples of the resin (a) having a weight average molecular weight of 10,000 or less and solid at room temperature (25 ° C.) used in the present invention include, for example, epoxy resins, polyimide resins, polyamide resins, polycarbodiimide resins, phenol resins, cyanate ester resins, acrylic resins. Resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal resin, urethane resin, acrylic rubber, etc. Among them, epoxy resin, polyimide resin, cyanate ester excellent in heat resistance and film formability Resins and polycarbodiimide resins are desirable, and epoxy resins and polyimide resins are more preferable. These may be used alone or as a mixture or copolymer of two or more.
本発明において使用する（ｂ）絶縁性球状無機フィラーとしては、例えば、ガラス、シリカ、アルミナ、酸化チタン、カーボンブラック、マイカ等が挙げられ、その中でも、ガラス、シリカ、アルミナ、酸化チタン等が好ましく、ガラス、シリカ、アルミナがより好ましい。これらは単独または２種以上の混合体として使用することもできる。同種の絶縁性球状無機フィラーを同重量部配合した場合、粒径の大きいものほど溶融粘度が低くなるが、本発明のフィルム状接着剤をフリップチップ接続方式に適用する場合、絶縁性球状無機フィラーが電極間に捕捉されて電気的な接続を阻害することを防止するため、粒径は１０μｍ以下であることが望ましい。 Examples of the insulating spherical inorganic filler (b) used in the present invention include glass, silica, alumina, titanium oxide, carbon black, mica, etc. Among them, glass, silica, alumina, titanium oxide and the like are preferable. Glass, silica, and alumina are more preferable. These can be used alone or as a mixture of two or more. When the same kind of insulating spherical inorganic filler is blended in the same part by weight, the larger the particle size, the lower the melt viscosity. However, when the film adhesive of the present invention is applied to the flip chip connection method, the insulating spherical inorganic filler Is preferably 10 μm or less in order to prevent the metal from being trapped between the electrodes and hindering electrical connection.
本発明において使用する（ｃ）エポキシ樹脂としては、２官能以上のビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、ナフタレン型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、各種多官能エポキシ樹脂などを用いることができる。これらは単独または２種以上を混合して使用することができる。また、エポキシ樹脂は２５℃において液状、固形のいずれでも使用することができる。 The (c) epoxy resin used in the present invention is a bifunctional or higher bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy. Resin, naphthalene type epoxy resin, phenol aralkyl type epoxy resin, dicyclopentadiene type epoxy resin, various polyfunctional epoxy resins, and the like can be used. These can be used individually or in mixture of 2 or more types. The epoxy resin can be used in a liquid state or a solid state at 25 ° C.
本発明において使用する（ｄ）硬化剤としては、イミダゾール類、多価フェノール類、酸無水物類、アミン類、ヒドラジド類、ポリメルカプタン、ルイス酸-アミン錯体などを用いることができる。その中でも、保存安定性と硬化物の耐熱性に優れるイミダゾール類、多価フェノール類、酸無水物等が望ましく、イミダゾール類、多価フェノール類がより望ましい。これらは単独または２種以上の混合体として使用することもできる。また、これら硬化剤をポリウレタン系、ポリエステル系の高分子物質等で被覆してマイクロカプセル化したものは、高い反応性を有する硬化剤を用いても保存安定性に優れていることから好ましい。本発明では、少なくとも２種類の硬化剤を含んでいると好ましい。高い反応性の硬化剤をマイクロカプセル化したものを用いることによって、超音波振動を利用したフリップチップ接続方式などのような低温かつ短時間接続条件においても硬化反応を完全ではないが開始させることができ、接続部の補強によって、チップ接続後の取扱い性が向上したり、樹脂の粘度上昇によってアフターキュア時のボイドの発生を抑制できることから好ましい。しかし、接続信頼性を確保するためには樹脂を充分硬化させる必要があるが、低温かつ短時間接続条件ではカプセルの除去が不充分で硬化剤が充分に反応できず、アフターキュア処理を行なった場合でも硬化が不充分になる恐れがある。そこで、アフターキュア処理によって硬化が充分に進行するように１５０℃以上の融点または分解点を有するカプセル化されていないイミダゾール類とマイクロカプセル化された硬化剤を併用することがより好ましい。１５０℃以上の融点または分解点を有するイミダゾール類としては、例えば２Ｐ４ＭＨＺ、２ＰＨＺ、２ＭＡ−ＯＫ(四国化成工業株式会社製商品名)などが挙げられる。 As the curing agent (d) used in the present invention, imidazoles, polyhydric phenols, acid anhydrides, amines, hydrazides, polymercaptan, Lewis acid-amine complexes and the like can be used. Among them, imidazoles, polyhydric phenols, acid anhydrides and the like that are excellent in storage stability and heat resistance of the cured product are desirable, and imidazoles and polyhydric phenols are more desirable. These can be used alone or as a mixture of two or more. In addition, those obtained by coating these curing agents with polyurethane-based or polyester-based polymer substances and making them microencapsulated are preferable because they have excellent storage stability even when a highly reactive curing agent is used. In the present invention, it is preferable that at least two kinds of curing agents are included. By using a microencapsulated highly reactive curing agent, it is possible to start the curing reaction, although not completely, even under low temperature and short time connection conditions such as flip chip connection method using ultrasonic vibration. It is possible to reinforce the connection part and improve the handleability after chip connection and to suppress the occurrence of voids during after-curing by increasing the viscosity of the resin. However, in order to ensure the connection reliability, it is necessary to sufficiently cure the resin, but under low temperature and short time connection conditions, the capsule removal is insufficient and the curing agent cannot sufficiently react, and the after cure treatment was performed. In some cases, curing may be insufficient. Therefore, it is more preferable to use an unencapsulated imidazole having a melting point or decomposition point of 150 ° C. or higher and a microencapsulated curing agent so that curing can proceed sufficiently by the after-curing treatment. Examples of imidazoles having a melting point or decomposition point of 150 ° C. or higher include 2P4MHZ, 2PHZ, 2MA-OK (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd.) and the like.
本発明における（ａ）重量平均分子量が１００００以下で常温（２５℃）において固形である樹脂の配合量は、（ａ）重量平均分子量が１００００以下で常温（２５℃）において固形である樹脂、（ｂ）絶縁性球状無機フィラー、（ｃ）エポキシ樹脂の総量１００重量部に対して、５〜５０重量部とすることが望ましく、５〜３５重量部とすることがより好ましく、５〜２０重量部とすることが特に好ましい。この配合量が５重量部未満ではフィルム形成が困難となる傾向があり、５０重量部を超えると流れ量が低下し接続が困難になる恐れがある。 The blending amount of the resin (a) having a weight average molecular weight of 10,000 or less and solid at normal temperature (25 ° C.) in the present invention is (a) a resin having a weight average molecular weight of 10,000 or less and solid at normal temperature (25 ° C.), ( b) Insulating spherical inorganic filler, (c) The total amount of epoxy resin is preferably 5 to 50 parts by weight, more preferably 5 to 35 parts by weight, and more preferably 5 to 20 parts by weight. It is particularly preferable that If the blending amount is less than 5 parts by weight, film formation tends to be difficult. If the blending amount exceeds 50 parts by weight, the flow rate may decrease and connection may be difficult.
本発明における（ｂ）絶縁性球状無機フィラーの配合量は、（ａ）重量平均分子量が１００００以下で常温（２５℃）において固形である樹脂、（ｂ）絶縁性球状無機フィラー、（ｃ）エポキシ樹脂の総量１００重量部に対して、２５〜８０重量部とすることが望ましく、４０〜６５重量部とすることがより望ましい。この配合量が２５重量部未満では硬化後の熱膨張係数が大きくなる傾向があり、８０重量部を超えると流れ量が低下して接続が困難になったり、またフィルムの可とう性が低下して脆くなる傾向がある。 The blending amount of the (b) insulating spherical inorganic filler in the present invention is as follows: (a) resin having a weight average molecular weight of 10,000 or less and solid at room temperature (25 ° C.), (b) insulating spherical inorganic filler, (c) epoxy The amount is preferably 25 to 80 parts by weight and more preferably 40 to 65 parts by weight with respect to 100 parts by weight of the total resin. If the blending amount is less than 25 parts by weight, the coefficient of thermal expansion after curing tends to increase. If the blending amount exceeds 80 parts by weight, the flow rate decreases and connection becomes difficult, and the flexibility of the film decreases. Tend to be brittle.
本発明における（ｃ）エポキシ樹脂の配合量は、（ａ）重量平均分子量が１００００以下で常温（２５℃）において固形である樹脂、（ｂ）絶縁性球状無機フィラー、（ｃ）エポキシ樹脂の総量１００重量部に対して、１０〜７０重量部とすることが望ましく、２０〜５０重量部とすることがより望ましい。この配合量が１０重量部未満では硬化物の耐熱性が低下する傾向があり、７０重量部を超えると硬化物の熱膨張係数が大きくなる傾向がある。なお、（ａ）重量平均分子量が１００００以下であって常温（２５℃）において固形である樹脂がエポキシ樹脂の場合、その配合量は（ｃ）エポキシ樹脂として計算する。 The blending amount of (c) epoxy resin in the present invention is as follows: (a) resin having a weight average molecular weight of 10,000 or less and solid at room temperature (25 ° C.), (b) insulating spherical inorganic filler, (c) total amount of epoxy resin The amount is preferably 10 to 70 parts by weight and more preferably 20 to 50 parts by weight with respect to 100 parts by weight. If the blending amount is less than 10 parts by weight, the heat resistance of the cured product tends to decrease, and if it exceeds 70 parts by weight, the thermal expansion coefficient of the cured product tends to increase. In addition, when the resin (a) whose weight average molecular weight is 10,000 or less and is solid at normal temperature (25 ° C.) is an epoxy resin, the blending amount is calculated as (c) an epoxy resin.
本発明における（ｄ）硬化剤の配合量は、硬化剤の種類によって異なるが、硬化剤がイミダゾール類の場合には、（ｃ）エポキシ樹脂１００重量部に対して０．１〜４０重量部とすることが望ましく、１〜３０重量部とすることがより望ましい。この配合量が０．１重量部未満では、硬化が不充分となる。また４０重量部を超えて多いと硬化物物性が低下する場合がある。２種以上の硬化剤を用いた場合には、それぞれの配合量が上記範囲内であることが望ましい。 The blending amount of (d) curing agent in the present invention varies depending on the type of curing agent, but when the curing agent is an imidazole, it is 0.1 to 40 parts by weight with respect to 100 parts by weight of (c) epoxy resin. It is desirable to use 1 to 30 parts by weight. If this amount is less than 0.1 parts by weight, curing will be insufficient. Moreover, when it exceeds 40 weight part, hardened | cured material physical property may fall. When two or more kinds of curing agents are used, it is desirable that the amount of each is within the above range.
本発明のフィルム状接着剤には上記必須成分以外に、シラン系またはチタン系のカップリング剤を使用することができる。この使用量としては、（ｂ）絶縁性球状無機フィラー１００重量部に対して、０．１〜１０重量部であることが好ましい。 In addition to the above essential components, a silane-based or titanium-based coupling agent can be used for the film adhesive of the present invention. As this usage-amount, it is preferable that it is 0.1-10 weight part with respect to 100 weight part of (b) insulating spherical inorganic fillers.
半導体チップと電気的に接続される基板は、通常の回路基板でもよく、また半導体チップでもよい。回路基板の場合、配線パターンは、ガラスエポキシ、ポリイミド、ポリエステル、セラミックなどの絶縁基板表面に形成された銅などの金属層の不要な個所をエッチング除去して形成したもの、絶縁基板表面にめっきによって形成したもの、絶縁基板表面に導電性物質を印刷して形成したものを用いることができる。また、配線パターンは単一の金属で構成されている必要はなく、金、銀、銅、ニッケル、インジウム、パラジウム、スズ、鉛、ビスマスなど複数の金属成分を含んでいてもよいし、これらの金属層が積層された構造をしていてもよい。
また、基板が、半導体チップの場合、配線パターンは通常アルミニウムで構成されるが、その表面に、金、銀、銅、ニッケル、インジウム、パラジウム、スズ、鉛、ビスマスなどの金属層をめっきによって形成してもよい。
The substrate electrically connected to the semiconductor chip may be a normal circuit substrate or a semiconductor chip. In the case of a circuit board, the wiring pattern is formed by etching away unnecessary portions of a metal layer such as copper formed on the surface of an insulating substrate such as glass epoxy, polyimide, polyester, and ceramic. Those formed and those formed by printing a conductive substance on the surface of the insulating substrate can be used. Moreover, the wiring pattern does not need to be composed of a single metal, and may contain a plurality of metal components such as gold, silver, copper, nickel, indium, palladium, tin, lead, and bismuth. You may have the structure where the metal layer was laminated | stacked.
When the substrate is a semiconductor chip, the wiring pattern is usually made of aluminum, but a metal layer such as gold, silver, copper, nickel, indium, palladium, tin, lead, or bismuth is formed on the surface by plating. May be.
半導体チップの突出した接続端子は、金属ワイヤを用いて形成されるスタッドバンプや金属ボールを半導体チップの電極に熱加熱・加圧や超音波併用熱加熱・加圧によって固定したものやめっき、蒸着によって形成されたものでもよい。突出した接続端子は金、銀、銅、ニッケル、インジウム、パラジウム、スズ、鉛、ビスマスなどの単一の金属で構成されてもよいし、複数の金属成分を含んでいてもよいし、これらの金属層が積層された構造をしていても良い。また、突出した接続端子は導電性ペーストを印刷することによって形成したものでもよい。 The protruding connection terminals of the semiconductor chip are the ones in which stud bumps or metal balls formed using metal wires are fixed to the electrodes of the semiconductor chip by thermal heating / pressurization or ultrasonic heating / pressurization, plating, vapor deposition It may be formed by. The protruding connection terminal may be composed of a single metal such as gold, silver, copper, nickel, indium, palladium, tin, lead, bismuth, or may include a plurality of metal components. You may have the structure where the metal layer was laminated | stacked. The protruding connection terminal may be formed by printing a conductive paste.
フィルム状接着剤を基板表面の半導体チップが搭載される領域に貼り付けるには、個片に切り出した接着フィルムを貼り付け領域に配置し、加熱・加圧によって貼り付けてもよい。
フィルム状接着剤を貼り付ける位置や面積は半導体チップが搭載される領域内では任意であるが、半導体チップの突出した接続端子と電気的に接続される配線パターンの少なくとも一部を覆うように貼り付けることが好ましい。
In order to affix the film adhesive to the region on the substrate surface where the semiconductor chip is mounted, the adhesive film cut into individual pieces may be disposed in the affixing region and adhered by heating and pressing.
The position and area for applying the film adhesive is arbitrary within the region where the semiconductor chip is mounted, but it is attached so as to cover at least part of the wiring pattern electrically connected to the protruding connection terminal of the semiconductor chip. It is preferable to attach.
突出した接続端子を有する半導体チップにフィルム状接着剤を貼り付けるには、個片に切り出した接着フィルムを加熱・加圧によって貼り付けても良い。また、半導体ウエハの状態でフィルム状接着剤をロールラミネータなどで貼り付けた後、ダイシングすることによってフィルム状接着剤が貼り付けられた半導体チップとして個片に切り出しても良い。 In order to affix the film adhesive to the semiconductor chip having the protruding connection terminals, the adhesive film cut out into individual pieces may be affixed by heating and pressing. Moreover, after sticking a film adhesive in the state of a semiconductor wafer with a roll laminator etc., you may cut out into a piece as a semiconductor chip to which the film adhesive was stuck by dicing.
フィルム状接着剤を基板表面の半導体チップが搭載される領域あるいは半導体チップの突出した接続端子が形成された面に貼り付けた後、そのまま半導体チップと基板を接続してもよいが、フィルム状接着剤および回路基板中の揮発成分を減少させて、半導体チップと基板の間にボイドと呼ばれる気泡が発生するのを抑制するために、フィルム状接着剤を貼り付けた状態で加熱処理することが好ましい。また、加熱処理することによってフィルム状接着剤の粘度が低下するために配線パターンへの埋め込み性が改善され、気泡巻き込みによるボイド発生を低減することができる。
加熱処理を行なう際には、使用するフィルム状接着剤の硬化反応開始温度より低い温度あるいは反応開始時間よりも短い時間で処理することが望ましい。
硬化反応開始温度は、ＤＳＣ（Ｄｉｆｆｅｒｅｎｔｉａｌ Ｓｃａｎｎｉｎｇ Ｃａｌｏｒｉｍｅｔｅｒ、示差走査熱分析）で得られるチャートにおいて、発熱ピークに到達する前の発熱曲線の接線とベースラインの交点から求めてもよいし、粘度と加熱温度の関係をプロットして粘度が上昇し始める温度を求めてもよい。
硬化反応開始時間は、所定の温度で加熱処理した試料の処理時間とＤＳＣで得られる発熱量の関係をプロットして、発熱量が減少し始めるまでの時間を求めてもよいし、粘度と処理時間の関係をプロットして、粘度が上昇し始めるまでの時間を求めてもよい。
After the film adhesive is applied to the surface of the substrate on which the semiconductor chip is mounted or the surface on which the protruding connection terminal of the semiconductor chip is formed, the semiconductor chip and the substrate may be connected as they are. In order to reduce the volatile components in the agent and the circuit board and suppress the generation of bubbles called voids between the semiconductor chip and the substrate, it is preferable to heat-treat with the film adhesive applied. . Moreover, since the viscosity of a film adhesive falls by heat-processing, the embedding property to a wiring pattern is improved and the void generation by bubble entrainment can be reduced.
When performing the heat treatment, it is desirable to perform the treatment at a temperature lower than the curing reaction start temperature of the film adhesive used or shorter than the reaction start time.
The curing reaction start temperature may be obtained from the intersection of the tangent line and the baseline of the exothermic curve before reaching the exothermic peak in the chart obtained by DSC (Differential Scanning Calorimeter), or the viscosity and the heating temperature. The temperature at which the viscosity starts to rise may be obtained by plotting the above relationship.
The curing reaction start time may be obtained by plotting the relationship between the processing time of the sample heat-treated at a predetermined temperature and the calorific value obtained by DSC, and obtaining the time until the calorific value starts decreasing, or the viscosity and processing The time until the viscosity starts to rise may be obtained by plotting the time relationship.
半導体チップと基板を電気的に接続するには、基板をステージに固定し、半導体チップを超音波振動方向に平行に取り付ける接合ヘッドに固定し、その接合ヘッドを上から押し付ける機構を有する装置を用いる。このような装置は市販されており、例えば株式会社アルテクス製超音波フリップチップボンダーＳＨ−５０ＭＰ（製品名）を用いることができる。
半導体チップと基板を接続する際の条件は、接続温度：５０〜２５０℃、圧力：０．１〜１０ＭＰａ、超音波の周波数：２０〜２００ｋＨｚ、振動の振幅：０．０１μｍ以上、加圧時間：０．１秒以上、超音波の印加時間：０．０５秒以上の範囲内であり、加圧と超音波印加のタイミングは加圧時間内に超音波印加を開始し、加圧時間内に超音波印加を終了することを満たしていれば、任意のタイミングで印加すればよい。
接続温度が５０℃未満であると、バンプと配線パターンの間に接着樹脂が残存し、未接続となったり、接続抵抗が高くなるおそれがある。接続温度が２５０℃を超えると、半導体チップと基板との熱膨張係数差に由来する熱応力が増大し、接続部にダメージが発生するおそれがある。また樹脂基板の場合、基板が軟化して、超音波振動が吸収されてしまい金属接合できなくなるおそれがある。より好ましくは５０〜２００℃の範囲である。
圧力が０．１ＭＰａ未満であると、対向する接続端子間に樹脂が残存し、未接続となったり、あるいは接続抵抗が高くなるおそれがあり、圧力が１０ＭＰａを超えると、接続端子や配線が破壊されるおそれがある。より好ましくは、０．３〜４．０ＭＰａの範囲である。
超音波の周波数が２０ｋＨｚ未満であると、接続端子や配線が破壊されるおそれがあり、周波数が２００ｋＨｚを超えると、接続部に超音波振動が伝達されず、対向する接続端子間に樹脂が残存し、未接続となったり、あるいは金属接合が不充分なために接続抵抗が高くなるおそれがある。より好ましくは、４０〜１００ｋＨｚの範囲である。
超音波振動の振幅が０．０１μｍ未満であると、対向する接続端子間に樹脂が残存し、未接続となったり、あるいは金属の拡散が不充分なために接続抵抗が高くなったり、接続信頼性が低下するおそれがある。より好ましくは、０．１〜１０μｍの範囲である。
加圧時間が０．１秒未満であると、対向する接続端子間に樹脂が残存し、未接続となったり、あるいは接続抵抗が高くなったり、接続信頼性が低下するおそれがあり、加圧時間が長くなると生産性が低下することから、加圧時間の短縮が必要である。好ましくは１０秒以内がよい。
超音波の印加時間が０．０５秒未満であると、金属表面の有機物や酸化物の除去が不充分のため、金属接合が不充分であり、接続抵抗が高くなったり、接続信頼性が低下する場合がある。また、振幅を大きくした場合や周波数を低くした場合、印加時間を長くすると、接続端子や配線が破壊されるおそれがある。より好ましくは５秒以内であり、さらに５秒を超えると生産性が低下するおそれもある。
In order to electrically connect the semiconductor chip and the substrate, an apparatus having a mechanism for fixing the substrate to the stage, fixing the semiconductor chip to a bonding head attached in parallel with the ultrasonic vibration direction, and pressing the bonding head from above is used. . Such an apparatus is commercially available, and for example, an ultrasonic flip chip bonder SH-50MP (product name) manufactured by Altex Co., Ltd. can be used.
The conditions for connecting the semiconductor chip and the substrate are as follows: connection temperature: 50 to 250 ° C., pressure: 0.1 to 10 MPa, ultrasonic frequency: 20 to 200 kHz, vibration amplitude: 0.01 μm or more, pressurization time: The application time of ultrasonic waves is within a range of 0.1 seconds or more and 0.05 seconds or more, and the timing of pressurization and ultrasonic application starts ultrasonic application within the pressurization time, If it is satisfied that the application of the sound wave is completed, it may be applied at an arbitrary timing.
If the connection temperature is less than 50 ° C., the adhesive resin remains between the bump and the wiring pattern, and there is a possibility that the connection is not connected or the connection resistance is increased. When the connection temperature exceeds 250 ° C., the thermal stress derived from the difference in thermal expansion coefficient between the semiconductor chip and the substrate increases, and the connection portion may be damaged. In the case of a resin substrate, the substrate may be softened and ultrasonic vibrations may be absorbed, preventing metal bonding. More preferably, it is the range of 50-200 degreeC.
If the pressure is less than 0.1 MPa, the resin may remain between the connecting terminals facing each other, which may result in disconnection or increase in connection resistance. If the pressure exceeds 10 MPa, the connection terminals and wiring are destroyed. There is a risk of being. More preferably, it is the range of 0.3-4.0 MPa.
If the frequency of the ultrasonic wave is less than 20 kHz, the connection terminals and wiring may be destroyed. If the frequency exceeds 200 kHz, ultrasonic vibrations are not transmitted to the connection part, and the resin remains between the connection terminals facing each other. However, there is a possibility that the connection resistance becomes high due to the lack of connection or insufficient metal bonding. More preferably, it is the range of 40-100 kHz.
If the amplitude of the ultrasonic vibration is less than 0.01 μm, the resin remains between the connecting terminals facing each other and is not connected, or the diffusion resistance of the metal is insufficient, resulting in an increase in connection resistance or connection reliability. May decrease. More preferably, it is the range of 0.1-10 micrometers.
If the pressurization time is less than 0.1 seconds, resin may remain between the opposing connection terminals, which may result in disconnection or increase in connection resistance, or decrease in connection reliability. Since the productivity decreases as the time increases, it is necessary to shorten the pressurization time. Preferably it is within 10 seconds.
If the application time of the ultrasonic wave is less than 0.05 seconds, the metal surface is insufficiently removed due to insufficient removal of organic substances and oxides on the metal surface, resulting in insufficient metal bonding, high connection resistance, and low connection reliability. There is a case. Further, when the amplitude is increased or the frequency is decreased, if the application time is lengthened, the connection terminal or the wiring may be destroyed. More preferably, it is within 5 seconds, and if it exceeds 5 seconds, the productivity may be lowered.
半導体チップの突出した接続端子と基板表面の配線パターンを電気的に接続した後、フィルム状接着剤の硬化反応率が８０％以上になるように加熱処理することによって、高い接続信頼性を確保することができる。硬化反応率が９０％以上になるように加熱処理することがより好ましい。
硬化反応率が８０％以上になるように加熱処理するには、ヒートステージ上に放置してもよいし、加熱オーブン中に放置してもよい。この加熱処理工程は複数の半導体装置について一括で行なうことが可能である。
加熱処理は硬化開始温度よりも高い温度で行なうことが好ましいが、半導体チップと基板を接続した直後ではフィルム状接着剤の硬化反応率が８０％以下であるために、高温雰囲気下に急激に放置すると、半導体チップと基板との熱膨張係数差に由来する熱応力が接続部に集中して接続部にダメージが発生する恐れがある。硬化開始温度よりも低い温度から加熱を開始して、少なくとも２段階以上の加熱温度で処理することがより好ましい。
熱硬化性樹脂の硬化反応率は、ＤＳＣ（示差走査熱分析）による測定方法を用いることができる。ＤＳＣは測定温度範囲内で、発熱、吸熱のない標準試料との温度差を打ち消すように熱量を供給または除去するゼロ位法を測定原理とするものであり、測定装置が市販されており、全自動で測定を行なうことができる。エポキシ樹脂などの熱硬化性樹脂の硬化反応は発熱反応であり、一定の昇温速度で試料を加熱していくと、試料が反応し反応熱が発生する。その発熱量をチャートに出力し、ベースラインを基準として発熱曲線とベースラインで囲まれた領域の面積を発熱量とする。測定は室温から硬化反応が完了する温度を充分カバーする範囲で行なう。例えば、エポキシ樹脂の場合、室温から２５０℃まで５〜２０℃／分の昇温速度で測定し、上記した発熱量を求める。熱硬化性樹脂の硬化反応率は次のようにして求める。まず、未硬化試料の全発熱量を測定し、これをＡ（Ｊ／ｇ）とする。次に、測定試料の発熱量を測定し、これをＢとする。測定試料の硬化度Ｃ（％）は次の（数３）で与えられる。
After electrically connecting the protruding connection terminals of the semiconductor chip and the wiring pattern on the substrate surface, heat treatment is performed so that the curing reaction rate of the film adhesive is 80% or more, thereby ensuring high connection reliability. be able to. It is more preferable to perform heat treatment so that the curing reaction rate is 90% or more.
In order to perform the heat treatment so that the curing reaction rate becomes 80% or more, it may be left on a heat stage or in a heating oven. This heat treatment process can be performed on a plurality of semiconductor devices at once.
The heat treatment is preferably performed at a temperature higher than the curing start temperature, but immediately after the semiconductor chip and the substrate are connected, the curing reaction rate of the film adhesive is 80% or less, so it is left in a high temperature atmosphere rapidly. As a result, thermal stress derived from the difference in thermal expansion coefficient between the semiconductor chip and the substrate may be concentrated on the connection portion and damage to the connection portion may occur. More preferably, heating is started from a temperature lower than the curing start temperature, and the treatment is performed at a heating temperature of at least two stages.
The measuring method by DSC (differential scanning calorimetry) can be used for the curing reaction rate of the thermosetting resin. DSC is based on the zero principle method of supplying or removing the amount of heat so as to cancel out the temperature difference from the standard sample that does not generate heat or endotherm within the measurement temperature range. Measurement can be performed automatically. The curing reaction of a thermosetting resin such as an epoxy resin is an exothermic reaction, and when the sample is heated at a constant temperature increase rate, the sample reacts to generate reaction heat. The amount of heat generation is output to a chart, and the area of the region surrounded by the heat generation curve and the base line is defined as the amount of heat generation based on the baseline. The measurement is performed in a range that sufficiently covers the temperature at which the curing reaction is completed from room temperature. For example, in the case of an epoxy resin, measurement is performed at a temperature increase rate of 5 to 20 ° C./min from room temperature to 250 ° C., and the above-described calorific value is obtained. The curing reaction rate of the thermosetting resin is determined as follows. First, the total calorific value of the uncured sample is measured, and this is defined as A (J / g). Next, the calorific value of the measurement sample is measured, and this is defined as B. The degree of cure C (%) of the measurement sample is given by the following (Equation 3).
また、熱硬化性樹脂としてエポキシ樹脂を用いた場合には、可視レーザ励起のラマン分光計や近赤外レーザ励起のラマン分光計等で測定したエポキシ基のラマンスペクトルのピーク強度や面積強度を用いて反応硬化率を評価することもできる（例えば、特開２０００−１７８５２２公報参照）。
In addition, when an epoxy resin is used as the thermosetting resin, the peak intensity or area intensity of the Raman spectrum of the epoxy group measured with a visible laser-excited Raman spectrometer or near-infrared laser-excited Raman spectrometer is used. The reaction curing rate can also be evaluated (see, for example, JP 2000-178522 A).
（実施例）
重量平均分子量が１００００以下であり常温（２５℃）で固形である樹脂としてビスフェノールＡ型固形樹脂ＥＰ１０１０（重量平均分子量５５００）、ＥＰ１００９（重量平均分子量３７００）、ＥＰ１００７（重量平均分子量２９００）（いずれもジャパンエポキシレジン株式会社製製品名）、エポキシ樹脂として多官能エポキシ樹脂ＥＰ１０３２Ｈ６０（ジャパンエポキシレジン株式会社製 製品名）、ビスフェノールＡ型液状エポキシ樹脂ＥＰ８２８（ジャパンエポキシレジン株式会社製製品名）、固形イミダゾールとして２ＰＨＺ（四国化成工業株式会社製 製品名）、マイクロカプセル型硬化剤としてＨＸ−３９４１ＨＰ（旭化成株式会社製 製品名）、絶縁性球状無機フィラーとしてシリカフィラーＳＥ２０５０（株式会社アドマテックス製製品名 平均粒径０．４〜０．６μｍ）を用いて、表１に示す組成でトルエン−酢酸エチル混合溶媒中に溶解ないし分散してワニスを作製し、このワニスをセパレータフィルム（ＰＥＴフィルム）上にロールコータを用いて塗布した後、７０℃のオーブンで１０分間乾燥させることによって、フィルム状接着剤を作製した。
(Example)
Bisphenol A type solid resin EP1010 (weight average molecular weight 5500), EP1009 (weight average molecular weight 3700), EP1007 (weight average molecular weight 2900) (all are resins having a weight average molecular weight of 10,000 or less and solid at room temperature (25 ° C.)) Japan Epoxy Resin Co., Ltd. product name), epoxy resin multi-functional epoxy resin EP1032H60 (Japan Epoxy Resin Co., Ltd. product name), bisphenol A type liquid epoxy resin EP828 (Japan Epoxy Resin Co., Ltd. product name), solid imidazole 2PHZ (product name manufactured by Shikoku Kasei Kogyo Co., Ltd.), HX-3941HP (product name manufactured by Asahi Kasei Co., Ltd.) as a microcapsule type curing agent, and silica filler SE2050 (Adma Co., Ltd.) as an insulating spherical inorganic filler Product name average particle size 0.4 to 0.6 μm), and varnish was prepared by dissolving or dispersing in a toluene-ethyl acetate mixed solvent with the composition shown in Table 1, and this varnish was separated into a separator film (PET) A film adhesive was prepared by applying a roll coater on the film) and drying it in an oven at 70 ° C. for 10 minutes.
（比較例）
重量平均分子量が１００００より大きく常温（２５℃）で固形である樹脂として、フェノキシ樹脂ＦＸ２９３Ｓ（東都化成工業株式会社製製品名）、ビスフェノールＡ型固形樹脂ＥＰ１０１０（重量平均分子量５５００ ジャパンエポキシレジン株式会社製 製品名）、ビスフェノールＡ型液状エポキシ樹脂ＥＰ８２８（ジャパンエポキシレジン株式会社製製品名）、固形イミダゾールとして２ＰＨＺ（四国化成工業株式会社製 製品名）、マイクロカプセル型硬化剤としてＨＸ−３９４１ＨＰ（旭化成株式会社製 製品名）、絶縁性球状無機フィラーとしてシリカフィラーＳＥ２０５０（株式会社アドマテックス社製製品名 平均粒径０．４〜０．６μｍ）を用いて、表１に示す組成でトルエン−酢酸エチル混合溶媒中に溶解ないし分散してワニスを作製し、このワニスをセパレータフィルム（ＰＥＴフィルム）上にロールコータを用いて塗布した後、７０℃のオーブンで１０分間乾燥させることによって、フィルム状接着剤を作製した。
(Comparative example)
As resins having a weight average molecular weight greater than 10,000 and solid at room temperature (25 ° C.), phenoxy resin FX293S (product name, manufactured by Tohto Kasei Kogyo Co., Ltd.), bisphenol A type solid resin EP1010 (weight average molecular weight 5500, manufactured by Japan Epoxy Resin Co., Ltd.) Product name), bisphenol A liquid epoxy resin EP828 (product name manufactured by Japan Epoxy Resin Co., Ltd.), 2PHZ (product name manufactured by Shikoku Kasei Kogyo Co., Ltd.) as solid imidazole, and HX-3941HP (Asahi Kasei Corporation) as microcapsule type curing agent Product name), silica filler SE2050 (product name manufactured by Admatechs Co., Ltd., average particle size 0.4 to 0.6 μm) as an insulating spherical inorganic filler, and a toluene-ethyl acetate mixed solvent having the composition shown in Table 1 Dissolve or disperse in varnish After applying this varnish on a separator film (PET film) using a roll coater, it was dried in an oven at 70 ° C. for 10 minutes to prepare a film adhesive.
溶融粘度測定はレオメトリックス・サイエンティフィック・エフ・イー株式会社製粘弾性測定装置ＡＲＥＳを用いて測定した。測定プレートは直径８ｍｍの平行プレート、フィルム状接着剤はラミネートして厚み５００〜６００μｍものを９ｍｍ×９ｍｍの大きさに切り出して用いた。測定条件は温度１５０℃、周波数１０Ｈｚに設定した。 The melt viscosity was measured using a viscoelasticity measuring device ARES manufactured by Rheometrics Scientific F.E. The measurement plate was a parallel plate having a diameter of 8 mm, the film adhesive was laminated, and a 500 to 600 μm thick plate was cut into a size of 9 mm × 9 mm. Measurement conditions were set to a temperature of 150 ° C. and a frequency of 10 Hz.
フィルム状接着剤の硬化サンプルとして、２００℃−１ｈの加熱条件で処理したものを準備した（厚み５０μｍ）。平均線膨張係数の測定は、セイコーインスツルメント社製ＴＭＡ／ＳＳ６０００（製品名）を用いて、硬化物サンプルを２ｍｍ×２５ｍｍの大きさに切り出し、チャック間距離１５ｍｍ、測定温度範囲２０〜３００℃、昇温速度５℃／ｍｉｎ、フィルム断面積に対して０．５ＭＰａとなる引っ張り荷重の条件で行なった。Ｔｇ（ｔａｎδピーク）の測定は、セイコーインスツルメント社製ＤＭＳ６１００（製品名）を用いて、硬化物サンプルを０．５ｍｍ×４５ｍｍの大きさに切り出し、チャック間距離２０ｍｍ、周波数１Ｈｚ、測定温度範囲２０〜３００℃、昇温速度５．０℃／ｍｉｎの条件で行なった。 As a cured sample of the film adhesive, a sample processed under heating conditions of 200 ° C. to 1 h was prepared (thickness 50 μm). The average linear expansion coefficient was measured using a TMA / SS6000 (product name) manufactured by Seiko Instruments Inc., and a cured product sample was cut into a size of 2 mm × 25 mm, the distance between chucks was 15 mm, and the measurement temperature range was 20 to 300 ° C. The heating rate was 5 ° C./min, and the tensile load was 0.5 MPa with respect to the film cross-sectional area. Tg (tan δ peak) is measured using a DMS6100 (product name) manufactured by Seiko Instruments Inc., and a cured product sample is cut into a size of 0.5 mm × 45 mm, a distance between chucks of 20 mm, a frequency of 1 Hz, and a measurement temperature range. It carried out on the conditions of 20-300 degreeC and the temperature increase rate of 5.0 degree-C / min.
図３に示したように接合性を評価するために以下の評価を行なった。Ｎｉ／Ａｕめっき処理された配線パターンを有するガラスエポキシ基板に上記フィルム状接着剤を貼り付けてセパレータフィルムを剥離した後、金スタッドバンプが形成された半導体チップを超音波振動を利用したフリップチップ接続方式によって基板に接続した。半導体チップとしては１０．２ｍｍ×１０．２ｍｍの大きさで１８４個の金スタッドバンプがペリフェラル配置で形成されているものを用いて、ヘッド温度１００℃、ステージ温度５０℃、振幅２．０μｍ、周波数５０ｋＨｚ、印加時間０．５ｓ、荷重１．０Ｎ／バンプ（半導体チップに対して１．７７ＭＰａの圧力）の接続条件に設定し、株式会社アルテクス製超音波フリップチップボンダーＳＨ−５０ＭＰ（製品名）を用いて接続を行なった。接続サンプルについて、初期接続抵抗を測定した後、２−ブタノン中に浸漬してフィルム状接着樹脂を溶解し、再度接続抵抗を測定した。さらに、塩酸または水酸化ナトリウム水溶液中に浸漬して半導体チップのアルミ電極を溶解して半導体チップを除去した後、配線パターン上に残った金バンプの数を計測し、接合率を算出した。（接合率＝配線パターン上に残った金バンプの数／全バンプ数１８４）。次いで、シェアツールを用いて配線パターン上に残った金バンプのシェア試験を行なった。シェア試験はデイジ社製デイジ２４００を用いて行い、常温（２５℃）、シェア速度２００μｍ／ｓの条件で行なった。 As shown in FIG. 3, the following evaluation was performed in order to evaluate the bondability. Flip chip connection using ultrasonic vibration to a semiconductor chip on which gold stud bumps are formed after the film adhesive is pasted on a glass epoxy substrate having a wiring pattern that has been subjected to Ni / Au plating treatment and the separator film is peeled off It was connected to the substrate by the method. A semiconductor chip having a size of 10.2 mm × 10.2 mm and 184 gold stud bumps formed in a peripheral arrangement is used. The head temperature is 100 ° C., the stage temperature is 50 ° C., the amplitude is 2.0 μm, and the frequency. The connection conditions of 50 kHz, application time 0.5 s, load 1.0 N / bump (pressure of 1.77 MPa with respect to the semiconductor chip) were set, and an ultrasonic flip chip bonder SH-50MP (product name) manufactured by Altex Co., Ltd. was used. Connected. About the connection sample, after measuring initial connection resistance, it immersed in 2-butanone, the film adhesive resin was melt | dissolved, and connection resistance was measured again. Furthermore, after immersing in hydrochloric acid or sodium hydroxide aqueous solution, the aluminum electrode of the semiconductor chip was dissolved and the semiconductor chip was removed, the number of gold bumps remaining on the wiring pattern was measured, and the bonding rate was calculated. (Joint rate = number of gold bumps remaining on the wiring pattern / total number of bumps 184). Next, a shear test of the gold bumps remaining on the wiring pattern was performed using a shear tool. The shear test was performed using Daisy 2400 manufactured by Daisy, and was performed under conditions of room temperature (25 ° C.) and a shear rate of 200 μm / s.
接続信頼性の評価は以下の手順で行なった。上記フィルム状接着剤を用いて、Ｎｉ／Ａｕめっき処理された配線パターンを有するガラスエポキシ基板に貼り付けた後、金スタッドバンプが形成された半導体チップを超音波振動を利用したフリップチップ接続方式によって基板に接続した。半導体チップとしては１０．２ｍｍ×１０．２ｍｍの大きさで１８４個の金スタッドバンプがペリフェラル配置で形成されているものを用いて、ヘッド温度１００℃、ステージ温度５０℃、振幅２．０μｍ、周波数５０ｋＨｚ、印加時間０．５ｓ、荷重１．０Ｎ／バンプ（半導体チップに対して１．７７ＭＰａの圧力）の接続条件に設定し、株式会社アルテクス製超音波フリップチップボンダーＳＨ−５０ＭＰ（製品名）を用いて接続を行なった。さらに、接続サンプルを１５０℃に加熱したオーブン中に２時間放置することによってアフターキュア処理を行なった後、接続抵抗を測定した。この時、フィルム状接着剤の硬化反応率は全て９０％以上であった。次に、接続サンプルを１２５℃に加熱したオーブン中に２４時間放置し、引き続き３０℃、相対湿度６０％に調整した恒温恒湿槽に１９２時間放置した後、ＩＲリフロ処理（２６５℃ｍａｘ）を３回行なった。リフロ処理後の接続サンプルの接続抵抗を測定し、抵抗上昇が初期抵抗の１０％以下であるものを合格とした。 Connection reliability was evaluated according to the following procedure. Using the above film adhesive, after affixing to a glass epoxy substrate having a wiring pattern plated with Ni / Au, a semiconductor chip on which gold stud bumps are formed is formed by a flip chip connection method using ultrasonic vibration. Connected to the substrate. A semiconductor chip having a size of 10.2 mm × 10.2 mm and 184 gold stud bumps formed in a peripheral arrangement is used. The head temperature is 100 ° C., the stage temperature is 50 ° C., the amplitude is 2.0 μm, and the frequency. The connection conditions of 50 kHz, application time 0.5 s, load 1.0 N / bump (pressure of 1.77 MPa with respect to the semiconductor chip) were set, and an ultrasonic flip chip bonder SH-50MP (product name) manufactured by Altex Co., Ltd. was used. Connected. Further, the connection resistance was measured after performing the after-curing treatment by leaving the connection sample in an oven heated to 150 ° C. for 2 hours. At this time, the curing reaction rates of the film adhesives were all 90% or more. Next, the connection sample is left in an oven heated to 125 ° C. for 24 hours, and then left in a constant temperature and humidity chamber adjusted to 30 ° C. and a relative humidity of 60% for 192 hours, and then IR reflow treatment (265 ° C. max) is performed. Performed 3 times. The connection resistance of the connection sample after the reflow treatment was measured, and a resistance increase of 10% or less of the initial resistance was regarded as acceptable.
最低溶融粘度測定結果、流れ量測定結果、硬化物の熱膨張係数測定結果、超音波方式によるチップ接続試験の結果を纏めて表２に示した。 Table 2 summarizes the results of the minimum melt viscosity measurement, flow rate measurement, cured product thermal expansion coefficient measurement, and ultrasonic chip connection test.
１００℃での流れ量が１．５以上である実施例１〜４のフィルム状接着剤では、１）チップ接続後の初期抵抗が２ｍΩ／バンプ以下となっていること、２）接着剤溶解後にオープン不良は発生していないこと、３）バンプのシェア強度が高いこと、４）吸湿リフロ処理によって不良が発生していないといった結果から、超音波振動を利用したフリップチップ接続方式において、良好な金属接合部が形成されており、良好な接続信頼性を示すことが分かる。一方、最低溶融粘度が２００Ｐａ・ｓ未満で、流れ量が１．５未満である比較例１は、チップ接続後の初期抵抗がやや高く、接着剤溶解後にオープン不良が発生し、接合率８０％と悪く、また、シェア強度が低い。また、最低溶融粘度が２００Ｐａ・ｓ未満で、流れ量が１．５以上である比較例２は、比較例１の特性が改善されるものの接続信頼性に劣る。最低溶融粘度が２００Ｐａ・ｓ以上で、流れ量が１．５未満である比較例３は、比較例１と同様、チップ接続後の初期抵抗がやや高く、接着剤溶解後にオープン不良が発生し、接合率８０％と悪く、また、シェア強度が低い。 In the film adhesives of Examples 1 to 4 having a flow rate at 100 ° C. of 1.5 or more, 1) the initial resistance after chip connection is 2 mΩ / bump or less, and 2) after the adhesive is dissolved Good metal in the flip chip connection method using ultrasonic vibration from the result that there is no open defect, 3) the shear strength of the bump is high, and 4) the defect is not generated by moisture absorption reflow treatment. It can be seen that the joint is formed and shows good connection reliability. On the other hand, in Comparative Example 1 having a minimum melt viscosity of less than 200 Pa · s and a flow rate of less than 1.5, the initial resistance after chip connection is slightly high, an open failure occurs after the adhesive is dissolved, and the joining rate is 80%. In addition, the share strength is low. Further, Comparative Example 2 having a minimum melt viscosity of less than 200 Pa · s and a flow rate of 1.5 or more is inferior in connection reliability although the characteristics of Comparative Example 1 are improved. In Comparative Example 3 where the minimum melt viscosity is 200 Pa · s or more and the flow rate is less than 1.5, the initial resistance after chip connection is slightly high as in Comparative Example 1, and an open failure occurs after the adhesive is dissolved. The bonding rate is bad at 80% and the shear strength is low.
本発明におけるフィルム状接着剤は半導体チップの突出した接続端子と基板の配線パターンを直接電気的に接続するフリップチップ接続方式におけるアンダーフィル材として使用できるだけでなく、半導体チップの回路形成面を上に向けて基板表面に接着固定し、金ワイヤーなどで半導体チップの電極と基板の配線パターンを電気的に接続するワイヤーボンディング方式において、チップと基板を接着するための接着剤としても用いることができる。また、半導体チップを多段に積層するスタックドパッケージにおいて、半導体チップと半導体チップを接着固定するための接着剤としても用いることができる。 The film adhesive in the present invention can be used not only as an underfill material in a flip chip connection method for directly connecting a protruding connection terminal of a semiconductor chip and a wiring pattern of a substrate, but also on a circuit forming surface of the semiconductor chip. In the wire bonding method in which the electrode of the semiconductor chip and the wiring pattern of the substrate are electrically connected with a gold wire or the like, and can be used as an adhesive for bonding the chip and the substrate. Further, in a stacked package in which semiconductor chips are stacked in multiple stages, it can also be used as an adhesive for bonding and fixing the semiconductor chip and the semiconductor chip.
１．ガラスチップ
２．フィルム状接着剤
３．Ｓｉチップ
４．窒化ケイ素膜
５．ステージ
６．接合ヘッド
７．加熱・加圧後のフィルム状接着剤
８．ガラスエポキシ基板
９．配線パターン
１０．フィルム状接着剤
１１．接合ヘッド
１２．ステージ
１３．半導体チップ
１４．アルミ電極
１５．金スタッドバンプ
１６．シェアツール
1. 1. Glass chip 2. Film adhesive Si chip4. 4. Silicon nitride film Stage 6. 6. Joining head 7. Film adhesive after heating / pressurization 8. Glass epoxy substrate Wiring pattern 10. 10. Film adhesive Joining head 12. Stage 13. Semiconductor chip 14. Aluminum electrode 15. Gold stud bump 16. Share tool
Claims (4)
５０〜１５０℃のいずれかの温度において加熱・加圧した場合の平行板間にはさんだフィルム状接着剤の初期面積と加熱・加圧後の面積との比である流れ量が１．５以上であり、
前記（ｄ）硬化剤は、１５０℃以上の融点または分解点を有するイミダゾール類と、マイクロカプセル化された硬化剤とを含有し、
前記（ａ）重量平均分子量１００００以下で常温(２５℃)において固形である樹脂の配合量が前記（ａ）成分、前記（ｂ）成分及び前記（ｃ）成分の総量１００重量部に対して５〜５０重量部であり、前記（ｂ）絶縁性球状無機フィラーの配合量が当該総量１００重量部に対して２５〜８０重量部であり、前記（ｃ）エポキシ樹脂の配合量が当該総量１００重量部に対して１０〜７０重量部であり、前記１５０℃以上の融点または分解点を有するイミダゾール類及びマイクロカプセル化された硬化剤の配合量がそれぞれ前記（ｃ）エポキシ樹脂１００重量部に対して０．１〜４０重量部であることを特徴とするフィルム状接着剤。 (A) a resin having a weight average molecular weight of 10,000 or less and a solid at normal temperature (25 ° C.), (b) an insulating spherical inorganic filler, (c) an epoxy resin (provided that the component (a) is an epoxy resin, c) component is an epoxy resin different from component (a)), and (d) a curing agent,
The flow rate, which is the ratio of the initial area of the film adhesive sandwiched between parallel plates when heated and pressed at any temperature of 50 to 150 ° C. and the area after heating and pressing, is 1.5 or more. And
The (d) curing agent contains imidazoles having a melting point or decomposition point of 150 ° C. or higher, and a microencapsulated curing agent,
The blending amount of the resin (a) having a weight average molecular weight of 10,000 or less and solid at normal temperature (25 ° C.) is 5 with respect to 100 parts by weight of the total amount of the component (a), the component (b) and the component (c). To 50 parts by weight, the blending amount of the (b) insulating spherical inorganic filler is 25 to 80 parts by weight with respect to the total amount of 100 parts by weight , and the blending amount of the epoxy resin (c) is 100 parts by weight. a 10 to 70 parts by weight per part, the amount of imidazoles and micro-encapsulated curing agent has a melting point or decomposition point above the 0.99 ° C. is for each said (c) an epoxy resin 100 parts by weight A film-like adhesive characterized by being 0.1 to 40 parts by weight.
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