WO2011087310A3 - Group iii nitride semiconductor light-emitting device - Google Patents

Group iii nitride semiconductor light-emitting device Download PDF

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Publication number
WO2011087310A3
WO2011087310A3 PCT/KR2011/000281 KR2011000281W WO2011087310A3 WO 2011087310 A3 WO2011087310 A3 WO 2011087310A3 KR 2011000281 W KR2011000281 W KR 2011000281W WO 2011087310 A3 WO2011087310 A3 WO 2011087310A3
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
group iii
iii nitride
semiconductor layer
emitting device
Prior art date
Application number
PCT/KR2011/000281
Other languages
French (fr)
Korean (ko)
Other versions
WO2011087310A2 (en
Inventor
김창태
이태희
Original Assignee
주식회사 에피밸리
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 에피밸리 filed Critical 주식회사 에피밸리
Publication of WO2011087310A2 publication Critical patent/WO2011087310A2/en
Publication of WO2011087310A3 publication Critical patent/WO2011087310A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

The present disclosure relates to a group III nitride semiconductor light-emitting device, comprising a plurality of group III nitride semiconductor layers including a first group III nitride semiconductor layer having a first conductivity, a second group III nitride semiconductor layer having a second conductivity different from the first conductivity, and an activation layer interposed between the first group III nitride semiconductor layer and the second group III-nitride semiconductor layer, so as to generate light through the recombination of electrons and holes; a bonding pad electrically connected to the plurality of group III nitride semiconductor layers; a light-transmitting electrode which is formed on the second group III nitride semiconductor layer, and which has a plurality of openings for exposing the second group III nitride semiconductor layer; a first electrode formed to fill at least a portion of the plurality of openings; and a second electrode formed on the first group III nitride semiconductor layer, wherein said bonding pad and the first electrode are electrically connected together.
PCT/KR2011/000281 2010-01-14 2011-01-14 Group iii nitride semiconductor light-emitting device WO2011087310A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0003453 2010-01-14
KR1020100003453A KR20110083292A (en) 2010-01-14 2010-01-14 Iii-nitride semiconductor light emitting device

Publications (2)

Publication Number Publication Date
WO2011087310A2 WO2011087310A2 (en) 2011-07-21
WO2011087310A3 true WO2011087310A3 (en) 2011-10-20

Family

ID=44304830

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/000281 WO2011087310A2 (en) 2010-01-14 2011-01-14 Group iii nitride semiconductor light-emitting device

Country Status (2)

Country Link
KR (1) KR20110083292A (en)
WO (1) WO2011087310A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101223226B1 (en) * 2011-01-20 2013-01-31 갤럭시아포토닉스 주식회사 Light Emitting Diode having an open part and its Light Emitting Diode package
KR101883842B1 (en) 2011-12-26 2018-08-01 엘지이노텍 주식회사 Light emitting device and illuminating system including the same
KR101969307B1 (en) * 2012-09-07 2019-04-17 삼성전자주식회사 Semiconductor light emitting device
KR102070088B1 (en) 2013-06-17 2020-01-29 삼성전자주식회사 Semiconductor light emitting device
JP6285573B2 (en) * 2014-05-08 2018-02-28 エルジー イノテック カンパニー リミテッド Light emitting element

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100452751B1 (en) * 2003-06-03 2004-10-15 삼성전기주식회사 III-Nitride compound semiconductor light emitting device with mesh type electrode
KR20050076140A (en) * 2004-01-19 2005-07-26 삼성전기주식회사 Flip chip type nitride semiconductor light emitting diode
JP2006128227A (en) * 2004-10-26 2006-05-18 Mitsubishi Cable Ind Ltd Nitride semiconductor light emitting element
JP2006237574A (en) * 2005-01-31 2006-09-07 Mitsubishi Cable Ind Ltd GaN-BASED LIGHT EMITTING DIODE
KR20090044311A (en) * 2007-10-31 2009-05-07 한국광기술원 Light emitting diode and its manufacturing method
KR20090119258A (en) * 2008-05-15 2009-11-19 주식회사 에피밸리 Semiconductor light emitting device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100452751B1 (en) * 2003-06-03 2004-10-15 삼성전기주식회사 III-Nitride compound semiconductor light emitting device with mesh type electrode
KR20050076140A (en) * 2004-01-19 2005-07-26 삼성전기주식회사 Flip chip type nitride semiconductor light emitting diode
JP2006128227A (en) * 2004-10-26 2006-05-18 Mitsubishi Cable Ind Ltd Nitride semiconductor light emitting element
JP2006237574A (en) * 2005-01-31 2006-09-07 Mitsubishi Cable Ind Ltd GaN-BASED LIGHT EMITTING DIODE
KR20090044311A (en) * 2007-10-31 2009-05-07 한국광기술원 Light emitting diode and its manufacturing method
KR20090119258A (en) * 2008-05-15 2009-11-19 주식회사 에피밸리 Semiconductor light emitting device

Also Published As

Publication number Publication date
WO2011087310A2 (en) 2011-07-21
KR20110083292A (en) 2011-07-20

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