WO2011076917A1 - Procédé et dispositif d'identification d'une tranche - Google Patents

Procédé et dispositif d'identification d'une tranche Download PDF

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Publication number
WO2011076917A1
WO2011076917A1 PCT/EP2010/070638 EP2010070638W WO2011076917A1 WO 2011076917 A1 WO2011076917 A1 WO 2011076917A1 EP 2010070638 W EP2010070638 W EP 2010070638W WO 2011076917 A1 WO2011076917 A1 WO 2011076917A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
feature
recognition feature
identifying
image
Prior art date
Application number
PCT/EP2010/070638
Other languages
German (de)
English (en)
Inventor
Manfred Prantl
Stefan Scherer
Original Assignee
Alicona Imaging Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alicona Imaging Gmbh filed Critical Alicona Imaging Gmbh
Publication of WO2011076917A1 publication Critical patent/WO2011076917A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to a method and a device for identifying a wafer.
  • a wafer is a substantially circular or square, about 1 mm thick disc and forms z.
  • Tracing a wafer across the various process steps - often called product tracking - is typically accomplished in the industry by applying special markings to the wafer.
  • a wafer e.g. a bar code, an OCR readable text, and / or a double dot matrix code are applied to a location of the wafer as a recognition feature.
  • an artificially applied identification feature proves to be problematic, especially in the manufacture of solar cells. Since the surface of the wafer is often etched or coated when passing through the process steps, such artificial markings are not sufficiently durable or recognizable.
  • the application of such an artificial identifier is associated with a loss of usable area of the wafer, which in turn increases the cost per wafer.
  • the document DE 10 2007 010 516 A1 discloses a method for identifying the origin of a polycrystalline product and a device with an image acquisition unit for the production of product images of a polycrystalline product.
  • the known method serves to enable identification of the origin of the solar module or of a precursor product in the production of a polycrystalline solar module.
  • a product image with comparison images is created using image analysis Agreement of polycrystalline structure studied.
  • DE 10 2007 010 516 A1 relates exclusively to polycrystalline products, in particular polycrystalline wafers.
  • the method and apparatus described therein are only suitable for identifying such polycrystalline products, but not for the identification of monocrystalline products, since the only characteristic structures for identifying the polycrystalline products disclosed in this document are the grain boundaries of the polycrystalline structure and / or Crystal orientation within a study area.
  • monocrystalline wafers have no such crystal structures, which is why the known method for image evaluation and comparison of images in monocrystalline wafers must inevitably fail.
  • the present invention is therefore based on the specific object of providing a method and a device for identifying a wafer with which the wafer having a monocrystalline crystal structure can be identified.
  • the method of identifying a wafer in accordance with the present invention comprises detecting an identifying feature of the wafer and associating the identifying feature with the wafer, wherein the identifying feature is an optically detectable pattern of a three-dimensional structure of the surface of the wafer, the identifying feature being a scattering pattern of light which is reflected or scattered on a texture of the surface of the wafer generated during processing of the wafer.
  • the device according to the invention for identifying a wafer has a reading station for detecting a recognition feature of a wafer, and an evaluation unit for assigning the recognition feature to the wafer.
  • the reading station detects as a recognition feature an optically detectable pattern of a three-dimensional structure of the surface of the wafer, wherein the reading station detects as a recognition feature a reflection or scattering pattern of light, which reflects on a generated in the course of processing of the wafer texture of the surface of the wafer or is scattered.
  • the invention is based on the idea to use a recognition feature based on the texture or the three-dimensional structure of the surface of the wafer for unambiguously identifying this wafer.
  • this characteristic structure is already generated during the first step of wafer processing, namely the so-called "texturing”.
  • the surface of the raw wafer is chemically modified in such a way that microscopically small pyramids form on the wafer surface.
  • pyramids are a few microns in size and are distributed unevenly across the surface.
  • the pyramidal structure of the surface performs the important function of enlarging the active area in order to reflect as little as possible of the incident light.
  • the distribution and variation of the size of the micropyramids is like a fingerprint of the wafer, which makes each wafer uniquely identifiable.
  • the pyramidal structure is retained throughout the various process steps.
  • the specific teaching of the present invention is that this pyramidal structuring of the surface of the wafer, in addition to its actual function of area enlargement, can be used in addition to identifying each individual wafer across different process steps.
  • the reflection pattern can basically have many different configurations depending on the respective texture. It has proved particularly advantageous if the reflection pattern is a dot pattern which is caused by a surface of the wafer structured with said micropyramides. The peculiar characteristic of the surface of the wafer is transferred to the reflection pattern upon reflection of light at the surface. Such a dot pattern is relatively easy to detect. The detection can be done, for example, with a camera in an opto-electronic manner. However, such a camera can be much simpler and less expensive to equip than a camera that would capture a high resolution image of the microstructure itself as an identifying feature. The evaluation of such a dot pattern is also simpler than if a high-resolution image of the microscopically structured surface had to be evaluated directly.
  • the digital storage of a Such dot pattern which has essentially only light and dark spots, much less storage space than if a high-resolution image of the surface would be stored.
  • the entire surface of the wafer may be taken into account.
  • detecting the recognition feature to reduce the data to be processed is limited to a portion of the surface of the wafer.
  • This area may for example have an extension of a few square millimeters, in particular less than or equal to 1 cm.
  • the extent may be significantly smaller or larger depending on the camera resolution or the selected optics of the camera.
  • the choice of the appropriate size of the area of the surface also affects the recognition speed or recognition accuracy and ultimately the amount of data required for the digital representation or storage of the recognition feature.
  • the detection of the identification feature of the wafer can in principle be done with ambient light, as prevails in a factory hall, for example.
  • at least the relevant area of the surface of the wafer is specifically irradiated with light, that is to say it is additionally illuminated or illuminated in addition to the ambient light. This ensures that the desired light reflections with the required intensity occur in the relevant area in order to ensure the recognition of the wafer during the subsequent processing of the identification feature.
  • a light source for illuminating the relevant area of the surface of the wafer can be formed for example by an LED, a laser or another white light source. Also, a different color or a special polarization of the light can be used.
  • the illumination direction of the surface of the wafer may basically be the same as the direction of detection of the detection feature.
  • the capture of the image is from a different direction than the surface is illuminated because it provides higher contrast images.
  • the camera may be located in a normal direction above the surface of the wafer and its lens may be aligned with the surface.
  • the light source may then be oriented at approximately 45 ° to and oriented towards the surface, more specifically, that area of the surface in which the reflection or scattering of the light takes place.
  • the surface of the wafer is then slanted above illuminated. Often, the oblique incidence of light promotes the formation of richly pronounced light reflections in the reflection or dot pattern.
  • the position of the camera and the light source can be reversed so that the recognition feature is detected obliquely above the surface and the light source illuminates the surface of the wafer head-on in a normal direction to the surface. It may also be the camera and the light source at different locations above the surface and obliquely aligned to the surface to be aligned. Due to the three-dimensional structuring of the wafer surface, an image formed e.g. taken with the aid of the camera, characteristic light reflections as the distinguishing feature forming a characteristic dot pattern of light and dark dots corresponding to the three-dimensional structure of the wafer surface. This dot pattern is thus characteristic of the wafer and allows its unique identification because it de facto forms its "fingerprint".
  • the wafer is identified by comparing the detected detection feature with reference images of wafers matched earlier, and associated with wafers. This is preferably done digitally, e.g. Data sets representing the reference images are compared with a data set which represents the recognition feature detected as an image to be tested.
  • the comparison is performed at least in two stages, wherein in a first evaluation step a coarse selection of the reference images and in a second and optionally further evaluation steps a fine selection of the previously determined coarsely selected reference images.
  • this method does not test for the absolute identity of two dot patterns, but instead counts the number of dot matches, and upon reaching a threshold of dot matches, the corresponding dot patterns are selected as potential match candidates Use of this method significantly speeds up the coarse selection process and thus the entire comparison process. The remaining, generally only very small, number of match candidates can then be further investigated with a more complex fine-selection procedure.
  • fine selection is performed using computational geometry techniques, which are used to find a more accurate match between the image and the remaining number of reference images, again without the need for complete matching of the dot patterns, rather than a sufficient match a detected match between a reference image and the recognition feature a Waferkennung already assigned to or associated with the reference image to a higher-level system, such as a control and / or control system sent there, the Waferkennung can be further processed
  • a higher-level system such as a control and / or control system sent there
  • the Waferkennung can be further processed
  • it has proved to be particularly advantageous if, during the processing of the wafer, the identification feature of the wafer is detected as a reference image and a he is assigned Waferkennung. In subsequent processing steps, it is then possible at any time to identify the wafers referenced in this way.
  • the reference image is taken, for example, with a first reading station (also called detection station because there the wafer is first detected via its characteristic recognition feature) at an early (often first) process step, digitized and e.g. sent to a server.
  • the server stores this reference image.
  • each reading station is assigned to a process step
  • an image is taken which represents the identification feature, digitized and likewise transmitted to the server.
  • the identification of the wafer then runs on the server via which an association between the reference image taken with the first detection station and the dot pattern of the image taken with the respective reading station during subsequent process steps is performed.
  • the server in the present case is a powerful computer equipped with the appropriate hardware and software to receive the images that Store reference image to associate with a Waferkennung and carry out the multi-stage evaluation to the identification of the wafer.
  • a detection station generally called a pick-up device, comprises in a preferred example a camera for picking up the image of the light reflection and said light source for illuminating the surface to produce the light reflection or light scattering at the surface.
  • the camera is equipped with a lens that is designed and oriented accordingly.
  • color or polarizing filters can be used, e.g. Hide background light.
  • the light source can be equipped with a corresponding optics.
  • a setting of the lens of the detection station may differ from the setting of the lens of the reading station.
  • the light source or the light intensity may differ.
  • FIG. 1 shows a production plant for solar cells with a device for identifying a wafer
  • FIG. 2 shows a reading station of the device according to FIG. 1;
  • Fig. 3 is a read in with the reading station of FIG. 2 dot pattern.
  • FIG. 1 shows a detail of a production plant 1 for the production of solar cells.
  • the production plant 1 has a first processing station 2, a second processing station 3 and a third processing station 4.
  • At the three processing stations 2, 3 and 4 different process steps in the production of solar cells are performed. In these process steps, a monocrystalline wafer 5 is processed in each case.
  • the wafer 5 is moved according to the arrows A from the first processing station 2 to the second processing station 3 and then to the third processing station 4.
  • the production plant 1 comprises a device 6 as a system for identifying the wafer 5 throughout the process steps.
  • Each of the Processing stations 2, 3 and 4 has a device 6 associated reading station, namely a first reading station 7, a second reading station 8 and a third reading station 9.
  • the three reading stations 7, 8 and 9 are essentially identical in design and shown in detail in FIG.
  • the reading station 7, 8 or 9 shown in FIG. 2 has a light source 10 and a camera 11 with an objective 12.
  • the camera 11 and its lens 12 are aligned in a receiving direction AR, which is aligned parallel to a normal direction N on a surface 13 of the wafer 5.
  • the wafer 5 is shown viewed from its narrow side and the surface 13 extends normal to the drawing surface.
  • An illumination direction BR which corresponds to the orientation of the light source 10 or the light rays generated by it with respect to the surface of the wafer 5, is oriented at an angle of 45 ° inclined to the normal direction N.
  • the light source 10 illuminates with its light L a region 14 on the surface 13 of the wafer 5, which corresponds approximately to the area detected with the aid of the objective 12.
  • the light L is reflected or scattered in the region 14 of the surface 13 or, more precisely, in a three-dimensional microstructure of the surface 13 formed by micropyramids.
  • the reflection or scatter pattern is a dot pattern with bright spots on a dark background.
  • the camera 11 detects this dot pattern via its optoelectronic sensor elements and creates a digital image from it, as it is schematically illustrated in FIG. 3.
  • This dot pattern is a unique identifier EM for the wafer 5 and is caused by the pyramidal microstructure. This dot pattern is therefore the unique identifier EM of the wafer because it reflects the nature of the texture of the surface 13 of the wafer 5. The cause of the identification feature EM is therefore inherently contained in the structure of the surface 13 of the wafer 5. A dot pattern caused by another wafer looks different.
  • the image is output in the form of image data BD from the camera 11 to a server 15, which forms an evaluation unit of the device 6 for evaluating the recognition feature EM for the purpose of identifying the wafer 5.
  • a first image of the dot pattern-that is, the recognition feature EM- is first recorded with the first reading station 7.
  • This image serves as a reference image in subsequent process steps in order to recognize the wafer 5.
  • the reference image is digitized and transmitted as the first image data BDI to the server 15.
  • the first reading station 7 is also referred to as a detection station because it detects the identification feature EM for the first time and is made available for the subsequent identification of the wafer 5 in the subsequent process steps.
  • this reference image for the wafer 5 is stored. With this reference image, a unique Waferkennung is linked in the form of a serial number. After completion of the first process step, the wafer 5 is moved from the first processing station 2 according to the arrow A to the second processing station 3 on.
  • a second image is taken and digitized by means of the second reading station 8 from a dot pattern generated there, that is to say the identification feature EM.
  • This second image is also transmitted to the server 15 in the form of second image data BD2.
  • the dot pattern When creating the second image, it is not necessary for the dot pattern to be 100% caused by the same area 14 of the surface 13 previously used for the reference image. Rather, it is sufficient if the area 14 of the surface 13 covered by the objective 12 of the second reading station 8 has a sufficiently large overlap with the area 14 detected at the first reading station 7.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

L'invention concerne un procédé d'identification d'une tranche (5) comprenant la détection d'une caractéristique d'identification (EM) de la tranche (5) et l'association de la caractéristique d'identification (EM) à la tranche (5). La caractéristique d'identification (EM) est un modèle détectable optiquement d'une structure tridimensionnelle de la surface (13) de la tranche (5) et est un modèle de réflexion ou de dispersion de lumière (L) qui est réfléchi ou dispersé sur une texture de la surface (13) de la tranche produite au cours de l'usinage de la tranche (5).
PCT/EP2010/070638 2009-12-23 2010-12-23 Procédé et dispositif d'identification d'une tranche WO2011076917A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT0203109A AT509398A1 (de) 2009-12-23 2009-12-23 Verfahren und vorrichtung zur identifizierung eines wafers
ATA2031/2009 2009-12-23

Publications (1)

Publication Number Publication Date
WO2011076917A1 true WO2011076917A1 (fr) 2011-06-30

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PCT/EP2010/070638 WO2011076917A1 (fr) 2009-12-23 2010-12-23 Procédé et dispositif d'identification d'une tranche

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AT (1) AT509398A1 (fr)
WO (1) WO2011076917A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018217582A1 (de) * 2018-10-15 2020-04-16 Trumpf Werkzeugmaschinen Gmbh + Co. Kg Verfahren und System zum Identifizieren eines Werkstücks

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1073097A2 (fr) * 1999-07-26 2001-01-31 Komatsu Ltd Dispositif de lecture de marque en forme de point et procédé de lecture
GB2361086A (en) * 2000-04-07 2001-10-10 Nec Corp ID recognition apparatus and ID recognition sorter system for semiconductor wafer
JP2006309718A (ja) * 2005-03-29 2006-11-09 Fast:Kk 高速画像探索方法
DE102007010516A1 (de) 2007-03-05 2008-09-18 Intego Gmbh Verfahren zur Identifizierung der Herkunft eines polykristallinen Produkts sowie Vorrichtung mit einer Bilderfassungseinheit zur Erstellung von Produktbildern eines polykristallinen Produkts

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1073097A2 (fr) * 1999-07-26 2001-01-31 Komatsu Ltd Dispositif de lecture de marque en forme de point et procédé de lecture
GB2361086A (en) * 2000-04-07 2001-10-10 Nec Corp ID recognition apparatus and ID recognition sorter system for semiconductor wafer
JP2006309718A (ja) * 2005-03-29 2006-11-09 Fast:Kk 高速画像探索方法
DE102007010516A1 (de) 2007-03-05 2008-09-18 Intego Gmbh Verfahren zur Identifizierung der Herkunft eines polykristallinen Produkts sowie Vorrichtung mit einer Bilderfassungseinheit zur Erstellung von Produktbildern eines polykristallinen Produkts

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Publication number Publication date
AT509398A1 (de) 2011-08-15

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