WO2011073937A3 - Dispositif et procédé de dopage de matériaux semi-conducteurs - Google Patents

Dispositif et procédé de dopage de matériaux semi-conducteurs Download PDF

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Publication number
WO2011073937A3
WO2011073937A3 PCT/IB2010/055871 IB2010055871W WO2011073937A3 WO 2011073937 A3 WO2011073937 A3 WO 2011073937A3 IB 2010055871 W IB2010055871 W IB 2010055871W WO 2011073937 A3 WO2011073937 A3 WO 2011073937A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate surface
laser
doping
substrates
laser beam
Prior art date
Application number
PCT/IB2010/055871
Other languages
German (de)
English (en)
Other versions
WO2011073937A2 (fr
WO2011073937A9 (fr
Inventor
Rico Böhme
Lars Hartwig
Robby Ebert
Mathias Müller
Original Assignee
Roth & Rau Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth & Rau Ag filed Critical Roth & Rau Ag
Priority to CN2010800640879A priority Critical patent/CN102763194A/zh
Publication of WO2011073937A2 publication Critical patent/WO2011073937A2/fr
Publication of WO2011073937A3 publication Critical patent/WO2011073937A3/fr
Publication of WO2011073937A9 publication Critical patent/WO2011073937A9/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B23K26/0821—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)

Abstract

L'invention concerne un dispositif et un procédé de dopage de substrats au laser, selon lequel au moins un dopant est en contact avec la surface du substrat et un échauffement local de la surface du substrat est produit par un faisceau laser. La présente invention vise à mettre au point un procédé de dopage au laser qui permette de doper des substrats à grande vitesse, tout en produisant une faible densité de dislocation à la surface du substrat, d'obtenir une bonne activation électrique des dopants et d'offrir la possibilité de doper certaines zones plus ciblées. Ce but est atteint grâce à un dispositif de dopage de substrats au laser qui comprend au moins un laser à fibre présentant un faisceau laser de section transversale circulaire et une unité de balayage par l'intermédiaire de laquelle la surface du substrat d'être au contact d'un faisceau laser, la lumière du laser à fibre émise présentant une longueur d'onde comprise entre 750 nm et 3 000 nm. Ce but est atteint également grâce à un procédé de dopage de substrats, selon lequel au moins un dopant est en contact avec la surface du substrat et un échauffement local de la surface du substrat est effectué par un faisceau laser, un laser à fibre présentant un faisceau laser de section transversale circulaire étant produit, lequel est guidé au moyen d'une unité de balayage sur la surface du substrat, la lumière du laser à fibre émettant à une longueur d'onde comprise entre 750 nm et 3 000 nm.
PCT/IB2010/055871 2009-12-17 2010-12-16 Dispositif et procédé de dopage de matériaux semi-conducteurs WO2011073937A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010800640879A CN102763194A (zh) 2009-12-17 2010-12-16 掺杂半导体材料的系统和方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009059193.1A DE102009059193B4 (de) 2009-12-17 2009-12-17 Verfahren zur Dotierung von Halbleitermaterialien
DEDE102009059193.1 2009-12-17

Publications (3)

Publication Number Publication Date
WO2011073937A2 WO2011073937A2 (fr) 2011-06-23
WO2011073937A3 true WO2011073937A3 (fr) 2012-01-05
WO2011073937A9 WO2011073937A9 (fr) 2012-10-11

Family

ID=44167778

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2010/055871 WO2011073937A2 (fr) 2009-12-17 2010-12-16 Dispositif et procédé de dopage de matériaux semi-conducteurs

Country Status (5)

Country Link
KR (1) KR20120112586A (fr)
CN (1) CN102763194A (fr)
DE (1) DE102009059193B4 (fr)
TW (1) TW201137952A (fr)
WO (1) WO2011073937A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011107605A1 (de) 2011-06-30 2013-01-03 Iai Industrial Systems B.V. Verfahren zur Herstellung mono- oder polykristalliner Solarzellen basierend auf n-Silizium
JP6028849B2 (ja) 2013-03-07 2016-11-24 三菱電機株式会社 レーザアニール装置、半導体装置の製造方法
CN103219421B (zh) * 2013-03-27 2015-05-13 中国科学院上海光学精密机械研究所 利用激光制作垂直多结太阳能电池片的方法
DE102016121462A1 (de) * 2016-11-09 2018-05-09 Aixtron Se Strukturierte Keimschicht
CN111029648B (zh) * 2019-12-26 2021-07-02 中国科学院过程工程研究所 一种表面掺杂全固态电解质膜、其制备方法和用途

Citations (3)

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Publication number Priority date Publication date Assignee Title
US20070087488A1 (en) * 2005-10-18 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP1783824A1 (fr) * 2004-08-06 2007-05-09 Sumitomo Electric Industries, Ltd. Methode pour fabriquer des semi-conducteurs de type p et des element semi-conducteur
US20070272555A1 (en) * 2006-05-24 2007-11-29 Baird Brian W Laser processing of workpieces containing low-k dielectric material

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US4309225A (en) 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
DE10046170A1 (de) * 2000-09-19 2002-04-04 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht
AU2003274671A1 (en) 2002-10-28 2004-05-13 Orbotech Ltd. Selectable area laser assisted processing of substrates
JP2005260040A (ja) 2004-02-12 2005-09-22 Sony Corp ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法
DE102004036220B4 (de) 2004-07-26 2009-04-02 Jürgen H. Werner Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl
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DE102007035068A1 (de) 2007-07-26 2009-01-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Fertigen einer Silizium-Solarzelle mit einem selektiven Emitter sowie entsprechende Solarzelle
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Publication number Priority date Publication date Assignee Title
EP1783824A1 (fr) * 2004-08-06 2007-05-09 Sumitomo Electric Industries, Ltd. Methode pour fabriquer des semi-conducteurs de type p et des element semi-conducteur
US20070087488A1 (en) * 2005-10-18 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20070272555A1 (en) * 2006-05-24 2007-11-29 Baird Brian W Laser processing of workpieces containing low-k dielectric material

Also Published As

Publication number Publication date
DE102009059193B4 (de) 2024-02-15
DE102009059193A1 (de) 2011-06-22
CN102763194A (zh) 2012-10-31
KR20120112586A (ko) 2012-10-11
WO2011073937A2 (fr) 2011-06-23
TW201137952A (en) 2011-11-01
WO2011073937A9 (fr) 2012-10-11

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