WO2011071706A1 - Procédé et appareil permettant de réguler la pression dans de multiples zones d'un outil de traitement - Google Patents

Procédé et appareil permettant de réguler la pression dans de multiples zones d'un outil de traitement Download PDF

Info

Publication number
WO2011071706A1
WO2011071706A1 PCT/US2010/058156 US2010058156W WO2011071706A1 WO 2011071706 A1 WO2011071706 A1 WO 2011071706A1 US 2010058156 W US2010058156 W US 2010058156W WO 2011071706 A1 WO2011071706 A1 WO 2011071706A1
Authority
WO
WIPO (PCT)
Prior art keywords
pressure
flow
channel
orifice
controller
Prior art date
Application number
PCT/US2010/058156
Other languages
English (en)
Inventor
Junhua Ding
Original Assignee
Mks Instruments, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mks Instruments, Inc. filed Critical Mks Instruments, Inc.
Priority to KR1020147032950A priority Critical patent/KR101633266B1/ko
Priority to JP2012542109A priority patent/JP5764570B2/ja
Priority to GB1209918.0A priority patent/GB2487703B/en
Priority to DE201011004710 priority patent/DE112010004710T5/de
Publication of WO2011071706A1 publication Critical patent/WO2011071706A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/02—Modifications to reduce the effects of instability, e.g. due to vibrations, friction, abnormal temperature, overloading or imbalance
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
    • G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
    • G05D16/2026—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means
    • G05D16/206—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means the plurality of throttling means being arranged for the control of a plurality of diverging pressures from a single pressure

Definitions

  • the disclosure is directed to multiple zone pressure controllers, and more particularly to an improved method of and apparatus for controlling pressure in multiple zones of a process tool such as a vacuum deposition chamber.
  • the wafer is positioned on a wafer support and held in place by a vacuum.
  • the wafer may not form a complete seal around the contact areas between the wafer and the wafer support.
  • a needle valve (called a "leakby" valve) is employed for partially diverting some of the flow of each channel from the inlet flow into a corresponding zone so that the inlet flow pressure of the gas or vapor into each zone can be adjusted so as to maintain the desired pressure of the inlet flow to each zone despite leakage at the contact areas between the wafer support and the wafer.
  • leakby needle valves can be used to tweak each channel so as to ensure that the inlet flow to each zone are match from channel to channel for a given same pressure setpoint. This way the flow rates into the various zones of a chamber can be equalized by tweaking the various needle valves. Needle valves, however, are expensive and physically take up space usually in a confined manufacturing area.
  • the system comprises: at least two channels configured and arranged so as to provide the flow of the gas or vapor to corresponding zones of the process tool, each channel including a pressure controller configured and arranged to control the pressure of gas or vapor in each channel, a leakby orifice or nozzle configured to provide a leak rate of gas or vapor from the channel; and a controller configured and arrange to determine the true flow information to each zone of the process tool so that the true leak rate in the chamber can be determined.
  • FIG. 1 is a partial schematic, partial block diagram of one embodiment of a multiple zone controller for controlling the pressure of inlet flow of a gas or vapor into multiple zones of a vacuum deposition chamber;
  • Fig. 2 is a partial schematic, partial block diagram of one channel of the multiple zone controller of Fig. 1 ;
  • FIG. 3 is a partial schematic, partial block diagram of a second embodiment of a multiple zone controller for controlling the pressure of inlet flow of a gas or vapor into multiple zones of a vacuum deposition chamber..
  • embodiments of the present disclosure are directed to a system for and method of providing an improved solution for multiple zone pressure control.
  • the system and method provide improved pressure control performance in response to upstream pressure disturbances.
  • the system is configured and arranged and the method is performed so as to provide true flow information to multiple zones of a process tool such as a vacuum deposition chamber, while reducing the material and manufacturing and performance costs of that of the dual zone pressure controller described above.
  • each needle valve is replaced by an orifice or a nozzle to provide a leakby line for pressure control in each channel.
  • Such orifice/nozzle configuration reduces costs, material and space, which is desirable to purchasers and users of multiple zone pressure controllers.
  • Employing orifice/nozzles alone however, would require extremely tight tolerances when machining the orifice/nozzles in order to match the existing needle valve set up of the current devices. This would add significant costs to the system, defeating the purpose of reducing costs by replacing each needle valve with a simpler device.
  • the multiple zone pressure controller is arranged and configured to provide the substitution of the orifice/nozzles for the needle valves with permissible manufacturing tolerances when constructing and employing the orifice/nozzles as replacements for the corresponding needle valves.
  • the system is constructed and arranged so as to sense any upstream pressure disturbances. This is preferably accomplished by employing a pressure transducer or sensor to monitor the upstream pressure.
  • the pressure transducer provides information that can be used by the multiple zone pressure controller so as to provide pressure insensitive (PI) flow control. If there is an upstream pressure disturbance and a false flow signal in the sensor of the mass flow controller, the system will know it by virtue of the output of the upstream pressure transducer and cancel the false flow signal.
  • the multiple zone pressure controller can also use the upstream pressure information to do a proactive control before the upstream pressure disturbance affects the downstream pressure control.
  • the system and method described provide better control performance, at reduced cost for manufacturers and customers alike.
  • one embodiment of the multiple zone pressure controller system 10 includes an inlet 12 receiving a gas or vapor from a gas source 14. The rate of flow into the system is indicated as Qt.
  • Pu 16 is connected to sense the pressure of the gas or vapor flowing into the system, and provide a signal to the controller 26 representative of the upstream pressure measurement.
  • the system receives the flow from the inlet and divides the flow among a plurality of (two or more) channels 18a, 18b ... 18n.
  • Each channel includes a mass flow controller (designated 20a, 20b ...20n).
  • Each mass flow controller 20 includes a mass flow sensor 22 and a control valve 24.
  • the sensor 22 of each mass flow controller 20 is constructed and arranged to sense the flow rate of gas or vapor through the corresponding channel 18, and provide a signal representative of the sensed flow to the controller 26.
  • Controller 26 is arranged and configured to receive and send data from and to a user through a user interface (UI).
  • Each channel 18 is also provided with a pressure transducer (designated 28a, 28b ... 28n) for sensing the pressure in the corresponding channel.
  • a signal is provided to the controller 26 representative of the pressure measured by each transducer
  • needle valves are expensive and take up significant space. Accordingly, it is desirable to replace each needle valve with an orifice/nozzle which is substantially cheaper, and takes up less space than the corresponding needle valve. But elimination of the needle valve eliminates the ability to tweak the individual channels in order to fine tune the system. This results in a high requirement that the orifices and the valves are identical in performance, within tight tolerances so that the flow through each channel is matched. Such tight tolerances drives up the costs, and results in the loss of savings that are gained from eliminating the needle valves.
  • each channel can be provided with an orifice/nozzle 32a, 32b ... 32n for providing leakby from the corresponding channel, without concern of tight tolerances that otherwise would be required.
  • the leakby lines including leakby orifice/nozzle 32 are all connected to a vacuum pump 34 for drawing gas or vapor from the channel for pressure control.
  • Each downstream transducer 28 provides a measurement of the pressure within a corresponding channel, and generates a signal as a function of the measured pressure to the controller 26.
  • the controller 26 compares the measured pressure with that of a set point, and provides a signal to the control valve 24 associated with the channel to make any adjustments to the flow so the measured pressure and the set point remain the same.
  • each channel includes a mass flow controller 20 for controlling the rate of flow through each corresponding channel.
  • the raw flow sensor signal of sensor 20 of each mass flow controller 20 is typically used for process tool diagnosis. However, any upstream pressure disturbance will generate a false flow signal in the flow sensor, which causes a false alarm during the process tool diagnosis at least in some applications. Further, the raw flow sensor signal is not a good indicator of the leaking around the wafer in the chamber.
  • controller 26 of the system 10 is configured and arranged to use data from each sensor 22, the upstream pressure transducer 16 and each downstream pressure transducer 28 to measure and control the true flow through each channel into the process tool 36, according to the following relationship:
  • Q mpc,i i s trie A° w rate measured by the flow sensor 22 of the mass flow controller 20. It can be further compensated by the upstream pressure transducer 16 in channel i such that it is a pressure insensitive flow rate;
  • each nozzle/orifice 32 is constructed so that choke flow conditions exist through each nozzle/orifice-this can be either measured or calculated based on the properties of the nozzle/orifice); while the last term:
  • T slp is the standard temperature which is 273.15K, and is the standard pressure which is 1.01325e5 Pa.
  • C is the discharge coefficient for the orifice (typical values are from 0.7 to 1.0)
  • a / is the cross section size of the orifice; is the downstream pressure measured with the transducer 28 in channel i, and
  • ,M is a gas function, which is a function of the specific heat ratio of the gas ⁇ , the molecular weight M of the gas, and the temperature T of the gas.
  • Qchamber indicates the true leaking around the wafer in the processing chamber in zone i. It is more accurate and meaningful than the previously used variable Q mp cr , h for process tool diagnosis. Acceptance of using Qchamber for diagnosing the leaking rate around the wafer will result in eliminating the need for tight tolerance requirements on the leak-by orifice/nozzle, thus reducing the costs of each orifice/nozzle.
  • the system and method provide (a) good control performance for multiple zone pressure control applications, (b) pressure insensitive flow output information form the multiple zone pressure controller, and (c) true flow information to process tools, such as chambers, for process tool diagnosis, while eliminating the need for needle valves.
  • the result is a good solution for multiple zone pressure control applications, improving the control performance in response to upstream pressure disturbances, as well as providing true flow information to the process chambers for process tool diagnosis.
  • each nozzle/orifice 32 be constructed so that choke flow conditions exist through each nozzle/orifice-this can be either measured or calculated based on the properties of the nozzle/orifice.
  • the multiple zone pressure controller system 40 which can be constructed arranged so that each nozzle/orifice 42a, 42b ...42n can operate under both chock and non-choke flow conditions.
  • a pressure transducer 44 can be connected and arranged so as to measure the downstream pressure of the leakby line so that the leakby flow rate can be calculated even if the flow through the leakby orifice/nozzle is not choked.
  • the leakby flow through each orifice/nozzle can be calculated by either one of two methods: (1) a mathematical formula or (2) a lookup table having the various values of ieakby , as function of the upstream pressure of the nozzle which is measured by the pressure transducer 28 and the downstream pressure of the nozzle which is measured by the downstream pressure transducer 44.
  • control algorithms/software/signals for controlling electrolysis can be implemented in hardware, software, firmware, or any combinations of such, and over one or more networks.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Flow Control (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention a trait à un procédé et à un système de régulateur de pression à zones multiples permettant de réguler la pression d'un gaz ou l'écoulement de la vapeur vers au moins deux zones d'un outil de traitement tel qu'une chambre de dépôt par évaporation sous vide. Le système comprend : au moins deux canaux configurés et conçus de manière à fournir l'écoulement du gaz ou de la vapeur vers des zones correspondantes de l'outil de traitement, chaque canal incluant un régulateur de pression configuré et conçu de manière à réguler la pression du gaz ou de la vapeur dans chaque canal, un orifice ou une buse de fuite configuré de manière à fournir des pertes de gaz ou de vapeur à partir du canal ; et un régulateur configuré et conçu de manière à déterminer les informations du véritable écoulement de chaque zone de l'outil de traitement de sorte que les véritables fuites de gaz dans la chambre peuvent être déterminées.
PCT/US2010/058156 2009-12-07 2010-11-29 Procédé et appareil permettant de réguler la pression dans de multiples zones d'un outil de traitement WO2011071706A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020147032950A KR101633266B1 (ko) 2009-12-07 2010-11-29 다중 구역 압력 제어기 및 제어 방법
JP2012542109A JP5764570B2 (ja) 2009-12-07 2010-11-29 プロセス工具の多帯域の圧力を制御する方法及び制御するための装置
GB1209918.0A GB2487703B (en) 2009-12-07 2010-11-29 Methods of and apparatus for controlling pressure in multiple zones of a process tool
DE201011004710 DE112010004710T5 (de) 2009-12-07 2010-11-29 Verfahren und Vorrichtung zum Steuern bzw. Regeln des Druckes in mehreren Zonen eines Prozesswekzeuges

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/632,514 US9127361B2 (en) 2009-12-07 2009-12-07 Methods of and apparatus for controlling pressure in multiple zones of a process tool
US12/632,514 2009-12-07

Publications (1)

Publication Number Publication Date
WO2011071706A1 true WO2011071706A1 (fr) 2011-06-16

Family

ID=43629304

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/058156 WO2011071706A1 (fr) 2009-12-07 2010-11-29 Procédé et appareil permettant de réguler la pression dans de multiples zones d'un outil de traitement

Country Status (7)

Country Link
US (1) US9127361B2 (fr)
JP (1) JP5764570B2 (fr)
KR (2) KR101633266B1 (fr)
DE (1) DE112010004710T5 (fr)
GB (1) GB2487703B (fr)
TW (1) TWI537418B (fr)
WO (1) WO2011071706A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10472717B2 (en) 2014-08-20 2019-11-12 Tokyo Electron Limited Gas supply system, plasma processing apparatus, and operation method for plasma processing apparatus

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5562712B2 (ja) * 2010-04-30 2014-07-30 東京エレクトロン株式会社 半導体製造装置用のガス供給装置
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US9934956B2 (en) * 2015-07-27 2018-04-03 Lam Research Corporation Time multiplexed chemical delivery system
JP6502779B2 (ja) * 2015-07-29 2019-04-17 東京エレクトロン株式会社 ガス供給系のバルブのリークを検査する方法
US10957561B2 (en) * 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
EP3174071B1 (fr) * 2015-11-30 2018-11-14 General Electric Technology GmbH Procédé et installation de remplissage d'un appareillage électrique à isolation gazeuse comprenant un mélange de (cf3)2cfcn et de co2
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US11314375B2 (en) 2018-10-01 2022-04-26 Precigenome, LLC Multichannel pressure control system with user friendly interface
KR20210018762A (ko) * 2019-08-09 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 온도 제어된 화학물질 전달 시스템 및 이를 포함하는 반응기 시스템
CN111855113A (zh) * 2020-07-23 2020-10-30 上海华力微电子有限公司 退火机台、漏率检测装置及检测方法
US20220260084A1 (en) * 2021-02-17 2022-08-18 Michael Antonio Mariano Artificial Intelligent Variable Speed Valves with Sensors and a Network controller
CN113311881B (zh) * 2021-05-28 2022-12-13 北京七星华创流量计有限公司 一种质量流量控制器和流量控制方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
WO2004055855A2 (fr) * 2002-12-13 2004-07-01 Lam Research Corporation Systeme de gravure uniforme
US20080000530A1 (en) * 2006-06-02 2008-01-03 Applied Materials, Inc. Gas flow control by differential pressure measurements

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441076A (en) * 1992-12-11 1995-08-15 Tokyo Electron Limited Processing apparatus using gas
US5968588A (en) 1997-03-17 1999-10-19 Applied Materials, Inc. In-situ liquid flow rate estimation and verification by sonic flow method
EP0903577A3 (fr) 1997-07-29 2003-03-05 Leybold Inficon, Inc. Surveillance acoustique de consomation
US6022483A (en) * 1998-03-10 2000-02-08 Intergrated Systems, Inc. System and method for controlling pressure
US6016611A (en) * 1998-07-13 2000-01-25 Applied Komatsu Technology, Inc. Gas flow control in a substrate processing system
JP2002530770A (ja) * 1998-11-20 2002-09-17 セピアテック ジーエムビーエイチ 流動媒体の送出システムの個々の部分流を調節する方法および装置
EP1096351A4 (fr) * 1999-04-16 2004-12-15 Fujikin Kk Dispositif d'alimentation en fluide du type derivation parallele, et procede et dispositif de commande du debit d'un systeme de pression du type a fluide variable utilise dans ledit dispositif
US6752166B2 (en) * 2001-05-24 2004-06-22 Celerity Group, Inc. Method and apparatus for providing a determined ratio of process fluids
US6766260B2 (en) * 2002-01-04 2004-07-20 Mks Instruments, Inc. Mass flow ratio system and method
US6907904B2 (en) * 2003-03-03 2005-06-21 Redwood Microsystems, Inc. Fluid delivery system and mounting panel therefor
JP4224492B2 (ja) * 2003-06-09 2009-02-12 シーケーディ株式会社 圧力制御システム及び流量制御システム
US20050120805A1 (en) * 2003-12-04 2005-06-09 John Lane Method and apparatus for substrate temperature control
US6986359B2 (en) * 2004-03-09 2006-01-17 Mks Instruments, Inc. System and method for controlling pressure in remote zones
US8037896B2 (en) 2004-03-09 2011-10-18 Mks Instruments, Inc. Pressure regulation in remote zones
US7072743B2 (en) 2004-03-09 2006-07-04 Mks Instruments, Inc. Semiconductor manufacturing gas flow divider system and method
US20060060139A1 (en) * 2004-04-12 2006-03-23 Mks Instruments, Inc. Precursor gas delivery with carrier gas mixing
US7174263B2 (en) * 2005-03-25 2007-02-06 Mks Instruments, Inc. External volume insensitive flow verification
US7474968B2 (en) * 2005-03-25 2009-01-06 Mks Instruments, Inc. Critical flow based mass flow verifier
US7621290B2 (en) 2005-04-21 2009-11-24 Mks Instruments, Inc. Gas delivery method and system including a flow ratio controller using antisymmetric optimal control
US20070177985A1 (en) * 2005-07-21 2007-08-02 Walls James C Integral sensor and control for dry run and flow fault protection of a pump
US7456881B2 (en) 2006-01-12 2008-11-25 Aptina Imaging Corporation Method and apparatus for producing Bayer color mosaic interpolation for imagers
JP5123485B2 (ja) * 2006-03-10 2013-01-23 株式会社日立国際電気 基板処理装置及び基板処理方法及び半導体デバイスの製造方法
JP5372353B2 (ja) * 2007-09-25 2013-12-18 株式会社フジキン 半導体製造装置用ガス供給装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
WO2004055855A2 (fr) * 2002-12-13 2004-07-01 Lam Research Corporation Systeme de gravure uniforme
US20080000530A1 (en) * 2006-06-02 2008-01-03 Applied Materials, Inc. Gas flow control by differential pressure measurements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10472717B2 (en) 2014-08-20 2019-11-12 Tokyo Electron Limited Gas supply system, plasma processing apparatus, and operation method for plasma processing apparatus

Also Published As

Publication number Publication date
DE112010004710T5 (de) 2012-10-31
US20110135821A1 (en) 2011-06-09
JP2013513028A (ja) 2013-04-18
TWI537418B (zh) 2016-06-11
GB201209918D0 (en) 2012-07-18
TW201144477A (en) 2011-12-16
KR20120101490A (ko) 2012-09-13
KR20140148499A (ko) 2014-12-31
JP5764570B2 (ja) 2015-08-19
GB2487703A (en) 2012-08-01
US9127361B2 (en) 2015-09-08
KR101633266B1 (ko) 2016-06-27
GB2487703B (en) 2015-09-02

Similar Documents

Publication Publication Date Title
US9127361B2 (en) Methods of and apparatus for controlling pressure in multiple zones of a process tool
JP6892687B2 (ja) 流量制御装置および流量制御装置を用いる異常検知方法
CN111579013B (zh) 气体质量流量控制器及其流量标定方法
US20140216339A1 (en) Raw material vaporizing and supplying apparatus
TW201433897A (zh) 用於壓力式質流控制器之自驗證的方法及裝置
TW201346227A (zh) 即時監測流經質流控制器的流量之系統及方法
KR20160043060A (ko) 유량계 및 그것을 구비한 유량 제어 장치
KR20140105623A (ko) 차압식 매스 플로우 컨트롤러에 있어서 진단 기구
CN110073181B (zh) 用于大范围质量流量检验的方法和设备
KR102187959B1 (ko) 과도 가스 흐름의 계측 방법
US20080250854A1 (en) Mass flow device using a flow equalizer for improving the output response
US20180188700A1 (en) Apparatus for controlling flow and method of calibrating same
JP2006012872A (ja) 基板処理装置
EP3105647B1 (fr) Système et procédé permettant de produire un régulateur de débit massique autocontrôlé insensible à la pression
WO2019217078A1 (fr) Procédés et appareil destinés à des systèmes de régulation du rapport et du débit massique à canaux multiples
KR102473921B1 (ko) 폐색 검출 기능이 있는 비접촉식 지지 플랫폼
JP2022160437A (ja) 圧力減衰速度に基づく質量流量点検の方法、システム、及び装置
US20020193911A1 (en) Mass flow rate-measuring method and mass flow rate control apparatus
CN114354062B (zh) 一种上升速率法真空计校准装置及方法
KR20120041291A (ko) 정적형 유량계를 이용한 소닉 노즐 유출계수 교정 장치 및 방법
CN221260038U (zh) 一种对比系统
US11644852B2 (en) Flow rate ratio control system, film forming system, abnormality diagnosis method, and abnormality diagnosis program medium
CN117948612A (zh) 炉膛的氧气含量控制系统和方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10787965

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2012542109

Country of ref document: JP

ENP Entry into the national phase

Ref document number: 1209918

Country of ref document: GB

Kind code of ref document: A

Free format text: PCT FILING DATE = 20101129

WWE Wipo information: entry into national phase

Ref document number: 1209918.0

Country of ref document: GB

WWE Wipo information: entry into national phase

Ref document number: 112010004710

Country of ref document: DE

Ref document number: 1120100047103

Country of ref document: DE

ENP Entry into the national phase

Ref document number: 20127017188

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 10787965

Country of ref document: EP

Kind code of ref document: A1