WO2011071069A1 - Procédé de nettoyage d'un appareil de formation de film, procédé de formation de film et appareil de formation de film - Google Patents

Procédé de nettoyage d'un appareil de formation de film, procédé de formation de film et appareil de formation de film Download PDF

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Publication number
WO2011071069A1
WO2011071069A1 PCT/JP2010/071995 JP2010071995W WO2011071069A1 WO 2011071069 A1 WO2011071069 A1 WO 2011071069A1 JP 2010071995 W JP2010071995 W JP 2010071995W WO 2011071069 A1 WO2011071069 A1 WO 2011071069A1
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WO
WIPO (PCT)
Prior art keywords
condition
film forming
forming apparatus
electrodes
pair
Prior art date
Application number
PCT/JP2010/071995
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English (en)
Japanese (ja)
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WO2011071069A9 (fr
Inventor
克史 岸本
和彦 一色
Original Assignee
シャープ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to EP10835989A priority Critical patent/EP2511946A1/fr
Priority to CN2010800555414A priority patent/CN102656664A/zh
Priority to US13/514,851 priority patent/US20120251723A1/en
Publication of WO2011071069A1 publication Critical patent/WO2011071069A1/fr
Publication of WO2011071069A9 publication Critical patent/WO2011071069A9/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like

Definitions

  • the present invention relates to a film forming apparatus cleaning method, a film forming method, and a film forming apparatus, and more particularly to a film forming apparatus cleaning method, a film forming method, and a film forming apparatus for performing film formation using plasma. is there.
  • a silicon-based thin film may be formed.
  • This film formation is performed by, for example, a plasma CVD (Chemical Vapor Deposition) apparatus.
  • a plasma CVD Chemical Vapor Deposition
  • silicon deposits accumulate in the film formation chamber of the film formation apparatus. Since this deposit leads to an increase in particles in the film forming chamber, it needs to be removed periodically. That is, the film forming apparatus needs to be periodically cleaned.
  • Patent Document 1 Japanese Patent Laid-Open No. 6-318580 (Patent Document 1), the plasma for performing the cleaning is generated using a mixed gas of NF 3 gas and Ar gas.
  • the adhering matter described above adheres not only on the electrode for generating plasma but also on a member provided near the outer periphery of the electrode.
  • Examples of such members include wiring for controlling the electrode potential, wiring for supplying power to the heater built in the electrode, and piping for supplying process gas to the electrode.
  • the deposit on the electrode is removed relatively quickly, but there is a problem that it takes a long time to remove the deposit on the member provided near the outer periphery of the electrode.
  • an object of the present invention is to provide a method for cleaning a film forming apparatus that can quickly remove deposits on a member provided near the outer periphery of an electrode in addition to deposits on an electrode, It is another object of the present invention to provide a film forming method using this cleaning method and to provide a film forming apparatus suitable for performing this cleaning method.
  • the film forming apparatus cleaning method of the present invention includes a film forming apparatus for forming a silicon-based thin film using plasma generated by applying an alternating voltage between a first pair of electrodes. This is a film forming apparatus cleaning method for removing silicon-based deposits adhering to the film chamber, and includes the following steps.
  • the plasma is generated under the first condition between the first pair of electrodes.
  • plasma is generated under a second condition different from the first condition.
  • the second condition is a condition for expanding the plasma in the outer peripheral direction between the first pair of electrodes as compared with the first condition.
  • the cleaning method further includes a step of detecting a change in plasma state between the first pair of electrodes.
  • a transition is made from the step of generating plasma under the first condition to the step of generating plasma under the second condition.
  • the step of detecting the change in the plasma state includes the step of detecting the absolute value of the self-bias between the first pair of electrodes.
  • a transition is made from the step of generating plasma under the first condition to the step of generating plasma under the second condition.
  • the step of detecting a change in plasma state includes a step of detecting the intensity of light from the outer periphery between the first pair of electrodes.
  • a transition is made from the step of generating plasma under the first condition to the step of generating plasma under the second condition.
  • a second pair of electrodes is provided in the film forming chamber.
  • the film forming method of the present invention includes a step of removing silicon deposits by the above-described cleaning method of the film forming apparatus, and a step of forming a silicon thin film using the film forming apparatus after this step. .
  • the film forming apparatus of the present invention is for forming a silicon-based thin film, and includes a film forming chamber, a power source for generating an alternating voltage, a first pair of electrodes, and a detector.
  • the first pair of electrodes is provided in the film formation chamber and connected to a power source.
  • the first pair of electrodes is for generating plasma between the first pair of electrodes.
  • a detection part detects the change of the plasma state between 1st pairs.
  • FIG. 2 is a circuit diagram schematically showing an impedance matching circuit in FIG. 1. It is sectional drawing which shows roughly the mode of the film-forming method using the film-forming apparatus of FIG. It is a figure which shows roughly the relationship between the mixing ratio of the process gas introduced into the film-forming apparatus of FIG. 1, and distribution of plasma.
  • FIG. 5 is a cross-sectional view schematically showing plasma distribution in a flow rate region R1 of FIG.
  • FIG. 5 is a cross-sectional view schematically showing plasma distribution in a flow rate region R2 of FIG.
  • FIG. 5 is a cross-sectional view schematically showing the plasma distribution in the vicinity of a broken line La in the flow rate region R3 of FIG.
  • FIG. 5 is a cross-sectional view schematically showing plasma distribution in the vicinity of a broken line Lb in the flow rate region R3 of FIG.
  • FIG. 5 is a cross-sectional view schematically showing plasma distribution in the vicinity of a broken line Lc in the flow rate region R3 of FIG.
  • FIG. 5 is a cross-sectional view schematically showing plasma distribution in a flow rate region R4 of FIG. It is a graph which shows roughly the time change of the absolute value of the self-bias between the 1st electrodes in the cleaning method in Embodiment 1 of this invention.
  • the film forming chamber 10 is a vacuum chamber for performing a film forming process.
  • the cathode electrode 11 and the anode electrode 12 are arranged to face each other, thereby forming a pair of electrodes (first pair of electrodes).
  • first pair of electrodes first pair of electrodes.
  • the central portion is shown as the central region SC and the outer peripheral portion is shown as the outer peripheral region SE.
  • Each of the NF 3 gas cylinder 61 and the Ar gas cylinder 62 can supply a mixed gas of NF 3 gas and Ar gas whose mixing ratio is controlled by the flow rate controllers 51 and 52 as indicated by an arrow G in the figure. It is connected.
  • the feedthrough 34 and the gas pipe 24 are connected so as to supply this mixed gas to the cathode electrode 11.
  • the voltmeter 42 has one end connected between the cathode electrode 11 and the impedance matching circuit 41 and the other end grounded. Thereby, the absolute value of the self-bias between the cathode electrode 11 and the anode electrode 12 can be detected.
  • the emission spectroscopic device 43 is capable of measuring the intensity of light from the outer peripheral region SE through the feedthrough 35 as indicated by a broken line arrow in the figure.
  • substrate 91 is placed on anode electrode 12.
  • a process gas for forming the silicon-based thin film 92 is introduced into the film forming chamber 10 through a gas system (not shown) for that purpose.
  • This process gas is, for example, a mixed gas of silane gas and hydrogen gas.
  • an AC voltage is supplied between the cathode electrode 11 and the anode electrode 12 from the RF power source 71 via the impedance matching circuit 41.
  • a plasma is generated between the cathode electrode 11 and the anode electrode 12, whereby the silicon-based thin film 92 is formed by plasma CVD.
  • cleaning is performed by generating plasma while introducing a mixed gas of Ar gas and NF 3 gas as indicated by the arrow G (FIG. 1) as the above mixed gas.
  • each of the vertical axis and the horizontal axis indicates the flow rate of Ar gas and NF 3 gas using an arbitrary unit common between the vertical axis and the horizontal axis.
  • the plasma when the flow rate condition is in flow rate region R1 (FIG. 4), the plasma has distribution PL1.
  • the distribution PL1 is concentrated in the central area SC, and the electrodes are easily damaged. Therefore, it is preferable to avoid using the distribution PL1.
  • the plasma when the flow rate condition is in flow rate region R2 (FIG. 4), the plasma has distribution PL2. Distribution PL2 is slightly concentrated in central region SC.
  • the plasma has distribution PL3a.
  • the distribution PL3a spreads over the entire region S, but the plasma discharge in the outer peripheral region SE is somewhat weak.
  • Distribution PL3b extends over the entire region S.
  • the plasma has distribution PL3c.
  • the distribution PL3c spreads over the entire region S, but the plasma discharge in the outer peripheral region SE is slightly stronger.
  • the plasma has distribution PL4.
  • Distribution PL4 is concentrated in outer peripheral region SE, and abnormal discharge is likely to occur. Therefore, it is preferable to avoid the use of distribution PL4.
  • plasma is generated between the cathode electrode 11 and the anode electrode 12 under a flow rate condition (first condition) indicated by a broken line La or Lb in the flow rate region R3 (FIG. 4). That is, plasma having a distribution PL3a or PL3b is generated.
  • first condition a flow rate condition indicated by a broken line La or Lb in the flow rate region R3 (FIG. 4). That is, plasma having a distribution PL3a or PL3b is generated.
  • the deposits on the cathode electrode 11 and the anode electrode 12 are removed.
  • members located near the outer peripheral region SE that is, wiring The deposits 21 to 24 and the gas pipe 24 are not so much removed at this point.
  • the plasma state changes. This change can be detected by any of the following first to third detection methods.
  • the circuit constant of the impedance matching circuit (second detection unit) 41 changes. That is, the capacitances C1 and C2 change. Therefore, this change can be detected by monitoring the circuit constant (second detection method).
  • a change occurs in which the plasma intensity in the outer peripheral region SE decreases and the plasma distribution contracts to the central region SC.
  • This change can be detected by the emission spectroscopic device (third detection unit) 43 (FIG. 1) (third detection method).
  • the flow rate condition in response to detection by at least one of the first to third detection methods, is changed to a condition (second condition) located in the vicinity of the broken line Lc (FIG. 4). And migrated. That is, the plasma is expanded in the outer circumferential direction in the region S. As a result, a plasma having a distribution PL3c is generated.
  • this plasma is maintained for a certain period of time, the intensity of the plasma in the outer peripheral region SE is high, so that the members located in the vicinity of the outer peripheral region SE, that is, the deposits on the wirings 21 to 24 and the gas pipe 24 are efficiently Removed.
  • the cleaning method of the present embodiment is performed.
  • the cathode electrode is generated by the plasma having the distribution PL3a (FIG. 7) or PL3b (FIG. 8) generated under the flow rate condition near the broken line La or Lb (FIG. 4). 11 and the deposits on the anode electrode 12 (FIG. 1) are quickly removed.
  • the flow rate condition is switched to the flow rate condition in the vicinity of the broken line Lc (FIG. 4), so that the plasma is expanded in the outer circumferential direction in the region S.
  • the members provided in the vicinity of the outer peripheral region SE, that is, the deposits on the wires 21 to 24 and the gas pipe 24 are quickly removed.
  • the film forming apparatus of the present embodiment can simultaneously form films on a plurality of substrates.
  • a pair of electrodes (second pair of electrodes) including a cathode electrode 11a and an anode electrode 12a are further provided.
  • the second pair of electrodes in the same manner as the first pair of electrodes of the first embodiment (FIG.
  • the same effect as in the first embodiment can be obtained.
  • the present invention can be applied particularly advantageously to a cleaning method and a film forming method for a film forming apparatus for performing film formation using plasma.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Du plasma est généré entre une électrode de cathode (11) et une électrode d'anode (12) dans une première condition. Après cette étape, du plasma est généré dans une seconde condition qui est différente de la première condition. Dans la seconde condition, le plasma se répand davantage vers l'extérieur entre l'électrode de cathode (11) et l'électrode d'anode (12) par rapport à la première condition. En conséquence, les matières collant aux éléments situés à proximité des périphéries extérieures des électrodes peuvent être rapidement retirées avec les matières collant aux électrodes.
PCT/JP2010/071995 2009-12-11 2010-12-08 Procédé de nettoyage d'un appareil de formation de film, procédé de formation de film et appareil de formation de film WO2011071069A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP10835989A EP2511946A1 (fr) 2009-12-11 2010-12-08 Procédé de nettoyage d'un appareil de formation de film, procédé de formation de film et appareil de formation de film
CN2010800555414A CN102656664A (zh) 2009-12-11 2010-12-08 成膜装置的清洁方法、成膜方法以及成膜装置
US13/514,851 US20120251723A1 (en) 2009-12-11 2010-12-08 Method of cleaning film forming apparatus, film forming method, and film forming apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009281328A JP4738528B2 (ja) 2009-12-11 2009-12-11 成膜装置のクリーニング方法および成膜方法
JP2009-281328 2009-12-11

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WO2011071069A1 true WO2011071069A1 (fr) 2011-06-16
WO2011071069A9 WO2011071069A9 (fr) 2012-05-03

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US (1) US20120251723A1 (fr)
EP (1) EP2511946A1 (fr)
JP (1) JP4738528B2 (fr)
CN (1) CN102656664A (fr)
WO (1) WO2011071069A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014050979A1 (fr) * 2012-09-26 2014-04-03 株式会社日立国際電気 Procédé de fabrication de dispositif semi-conducteur, dispositif de traitement de substrat, et support d'enregistrement
CN104741340B (zh) * 2013-12-31 2018-01-09 北京北方华创微电子装备有限公司 反应腔室的清洗方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6314422A (ja) * 1986-07-07 1988-01-21 Matsushita Electric Ind Co Ltd プラズマｃｖｄ方法
JPH06318580A (ja) 1993-05-07 1994-11-15 Fuji Electric Co Ltd ドライクリーニング方法
JPH07201832A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 半導体製造装置
JPH08176828A (ja) * 1994-12-22 1996-07-09 Matsushita Electric Ind Co Ltd プラズマクリーニング方法
JPH08288223A (ja) * 1995-04-13 1996-11-01 Toshiba Corp 薄膜の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7988816B2 (en) * 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6314422A (ja) * 1986-07-07 1988-01-21 Matsushita Electric Ind Co Ltd プラズマｃｖｄ方法
JPH06318580A (ja) 1993-05-07 1994-11-15 Fuji Electric Co Ltd ドライクリーニング方法
JPH07201832A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 半導体製造装置
JPH08176828A (ja) * 1994-12-22 1996-07-09 Matsushita Electric Ind Co Ltd プラズマクリーニング方法
JPH08288223A (ja) * 1995-04-13 1996-11-01 Toshiba Corp 薄膜の製造方法

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Publication number Publication date
WO2011071069A9 (fr) 2012-05-03
JP2011124408A (ja) 2011-06-23
US20120251723A1 (en) 2012-10-04
JP4738528B2 (ja) 2011-08-03
EP2511946A1 (fr) 2012-10-17
CN102656664A (zh) 2012-09-05

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