WO2011062678A1 - Système de moulage comprenant un composant de système de moulage définissant un chenal de coulée doté d'un revêtement obtenu par dépôt de vapeur chimique assisté par plasma - Google Patents

Système de moulage comprenant un composant de système de moulage définissant un chenal de coulée doté d'un revêtement obtenu par dépôt de vapeur chimique assisté par plasma Download PDF

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Publication number
WO2011062678A1
WO2011062678A1 PCT/US2010/049550 US2010049550W WO2011062678A1 WO 2011062678 A1 WO2011062678 A1 WO 2011062678A1 US 2010049550 W US2010049550 W US 2010049550W WO 2011062678 A1 WO2011062678 A1 WO 2011062678A1
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WO
WIPO (PCT)
Prior art keywords
molding
component
melt channel
hot
vapor deposition
Prior art date
Application number
PCT/US2010/049550
Other languages
English (en)
Inventor
Daniel Wayne Barnett
Original Assignee
Husky Injection Molding Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Husky Injection Molding Systems Ltd filed Critical Husky Injection Molding Systems Ltd
Publication of WO2011062678A1 publication Critical patent/WO2011062678A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/17—Component parts, details or accessories; Auxiliary operations
    • B29C45/26—Moulds
    • B29C45/27—Sprue channels ; Runner channels or runner nozzles
    • B29C45/2701—Details not specific to hot or cold runner channels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/17—Component parts, details or accessories; Auxiliary operations
    • B29C45/26—Moulds
    • B29C45/27—Sprue channels ; Runner channels or runner nozzles
    • B29C45/2701—Details not specific to hot or cold runner channels
    • B29C2045/272—Part of the nozzle, bushing or runner in contact with the injected material being made from ceramic material

Definitions

  • An aspect of the present invention generally relates to (by example, but is not limited to) molding systems, and more specifically to a molding system including a molding- system component defining a melt channel having a Plasma Enhanced Chemical Vapor Deposition coating.
  • the first man-made plastic was invented in England in 1851 by Alexander PARKES. He publicly demonstrated it at the 1862 International Exhibition in London, calling the material Parkesine. Derived from cellulose, Parkesine could be heated, molded, and retain its shape when cooled. It was, however, expensive to produce, prone to cracking, and highly flammable.
  • American inventor John Wesley HYATT developed a plastic material he named Celluloid, improving on PARKES' invention so that it could be processed into finished form.
  • HYATT patented the first injection molding machine in 1872. It worked like a large hypodermic needle, using a plunger to inject plastic through a heated cylinder into a mold.
  • Injection molding machines consist of a material hopper, an injection ram or screw-type plunger, and a heating unit. They are also known as presses, they hold the molds in which the components are shaped. Presses are rated by tonnage, which expresses the amount of clamping force that the machine can exert. This force keeps the mold closed during the injection process. Tonnage can vary from less than 5 tons to 6000 tons, with the higher figures used in comparatively few manufacturing operations. The total clamp force needed is determined by the projected area of the part being molded. This projected area is multiplied by a clamp force of from 2 to 8 tons for each square inch of the projected areas. As a rule of thumb, 4 or 5 tons per square inch can be used for most products.
  • the plastic material is very stiff, it will require more injection pressure to fill the mold, thus more clamp tonnage to hold the mold closed.
  • the required force can also be determined by the material used and the size of the part, larger parts require higher clamping force.
  • Injection Molding granular plastic is fed by gravity from a hopper into a heated barrel. As the granules are slowly moved forward by a screw-type plunger, the plastic is forced into a heated chamber, where it is melted. As the plunger advances, the melted plastic is forced through a nozzle that rests against the mold, allowing it to enter the mold cavity through a gate and runner system. The mold remains cold so the plastic solidifies almost as soon as the mold is filled.
  • Mold assembly or die are terms used to describe the tooling used to produce plastic parts in molding.
  • the mold assembly are used in mass production where thousands of parts are produced. Molds are typically constructed from hardened steel, etc.
  • Hot-runner systems are used in molding systems, along with mold assemblies, for the manufacture of plastic articles. Usually, hot-runners systems and mold assemblies are treated as tools that may be sold and supplied separately from molding systems.
  • United States Patent Publication Number 2009/0236774 discloses a melt distribution apparatus which includes a plurality of chokes with each choke of the plurality of chokes being associated with a corresponding one of a drop of a plurality of drops.
  • the choke body is one of a diamond body, a ceramic body, or a carbide body.
  • the wear material of the choke body may include, for example, wear resistant materials such as a ruby body, a diamond body, a ceramic body, or a carbide body.
  • a molding system comprising: a molding- system component (902; 908; 101; 998) defining a melt channel (999), the melt channel (999) including a surface having, at least in part, a Plasma Enhanced Chemical Vapor Deposition (hereafter referred to, from time to time, as "PECVD”) coating (998).
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • an application operation including applying, at least in part, a Plasma Enhanced Chemical Vapor Deposition coating (998) to a surface of a melt channel (999) defined by the molding- system component (902; 908; 101; 998) of the molding system (100).
  • the present invention would provide for coated melt channel surfaces with a PECVD coating.
  • a PECVD coating has: high hardness from approximately 2000 to 3000 Hardness Units (Hv), lower friction from approximately 0.03 to 0.1, excellent adhesion, high corrosion resistance, and low processing temperature from approximately 200 to approximately 400 degrees Centigrade (approximately 392 to approximately 752 degree Fahrenheit). These coatings may reduce flow resistance, reduce wear and to reduce corrosion.
  • the PECVD coating provides lower flow resistance that may (i) improve system balance by reducing shear induced imbalance, and/or lower flow resistance may also improve color change (that is, changing melts having different coloring), and/or (ii) reduce plastic degradation of shear sensitive resins.
  • FIG. 1 depicts a schematic representation of a molding system (100).
  • FIG. 2A depicts a schematic representation of a molding- system component (902; 908; 101; 998) used in the molding system (100) of FIG. 1;
  • FIG. 2B depicts a process for manufacturing the molding-system component (902; 908; 101; 998) used in the molding system (100) of FIG. 1;
  • FIG. 3 depicts a schematic representation of a hot-runner component ((102; 103; 104) used in a hot-runner system (101) of the molding system (100) of FIG. 1
  • FIG. 1 depicts the schematic representation of the molding system (100).
  • FIG. 2A depicts the schematic representation of the molding-system component (902; 908; 101; 998) used in the molding system (100) of FIG. 1.
  • the molding system (100) may include components that are known to persons skilled in the art, and these known components will not be described here; these known components are described, at least in part, in the following reference books (for example): (i) "Injection Molding Handbook” authored by OSSWALD/TURNG/GRAMANN (ISBN: 3-446- 21669-2), (ii) "Injection Molding Handbook” authored by ROSATO AND ROSATO (ISBN: 0- 412-99381-3), (iii) "Injection Molding Systems” 3rd Edition authored by JOHANNABER (ISBN 3-446-17733-7) and/or (iv) "Runner and Gating Design Handbook” authored by BEAUMONT (ISBN 1-446-22672-9).
  • the molding system (100) is used to
  • the extruder assembly (997) includes (but is not limited to): an extruder assembly (997), a clamp assembly (996), a mold assembly (998), and a hot-runner system (101).
  • the clamp assembly (996) includes (but is not limited to): a moving platen (912), a stationary platen (914), tie bars (916), clamp units (918), and lock units (920).
  • the mold assembly (998) includes (but is not limited to): a stationary mold portion (917) and a moving mold portion (919).
  • the hot-runner system (101) connects the machine nozzle (908) to the mold assembly (998).
  • the molding system (100) includes (but is not limited to) a molding-system component (902; 908; 101; 998) defining a melt channel (999), and the melt channel (999) has a Plasma Enhanced Chemical Vapor Deposition coating (994) deposited on the surface of the melt channel (999).
  • the molding-system component (902; 908; 101; 998) includes (but is not limited to): (i) the barrel assembly (902), (ii) the mold assembly (998), (iii) the machine nozzle (908), (iv) a hot- runner component (102; 103; 104), which is depicted in FIG. 3, of the hot-runner system (101).
  • PECVD Plasma enhanced chemical vapor deposition
  • RF radio frequency
  • AC alternating current
  • DC direct current
  • Plasma is any gas in which a significant percentage of the atoms or molecules are ionized.
  • Fractional ionization in plasmas used for deposition and related materials processing varies from about 10-4 in typical capacitive discharges to as high as 5-10% in high density inductive plasmas. Processing plasmas are typically operated at pressures of a few milliTorr to a few Torr, although arc discharges and inductive plasmas can be ignited at atmospheric pressure. Plasmas with low fractional ionization are of great interest for materials processing because electrons are so light, compared to atoms and molecules, that energy exchange between the electrons and neutral gas is very inefficient. Therefore, the electrons can be maintained at very high equivalent temperatures (tens of thousands of K, equivalent to several eV (electron volt) average energy) while the neutral atoms remain at the ambient temperature.
  • the potential across the sheath surrounding an electrically isolated object is typically only 10-20 V, but much higher sheath potentials are achievable by adjustments in reactor geometry and configuration.
  • films can be exposed to energetic ion bombardment during deposition. This bombardment can lead to increases in density of the film, and help remove contaminants, improving the film's electrical and mechanical properties.
  • the ion density can be high enough that significant sputtering of the deposited film occurs; this sputtering can be employed to help planarize the film and fill trenches or holes.
  • a simple direct current (DC) discharge can be readily created at a few Torr between two conductive electrodes, and may be suitable for deposition of conductive materials.
  • insulating films will quickly extinguish this discharge as they are deposited. It is more common to excite a capacitive discharge by applying an alternating current (AC) or radio frequency (RF) signal between an electrode and the conductive walls of a reactor chamber, or between two cylindrical conductive electrodes facing one another.
  • AC alternating current
  • RF radio frequency
  • the latter configuration is known as a parallel plate reactor.
  • Frequencies of a few tens of Hz to a few thousand Hz will produce time varying plasmas that are repeatedly initiated and extinguished; frequencies of tens of kilohertz to tens of megahertz result in reasonably time independent discharges.
  • Excitation frequencies in the low frequency (LF) range usually around 100 kHz, require several hundred volts to sustain the discharge.
  • High frequency plasmas are often excited at the standard 13.56 MHz frequency widely available for industrial use; at high frequencies, the displacement current from sheath movement and scattering from the sheath assist in ionization, and thus lower voltages are sufficient to achieve higher plasma densities.
  • Excitation power of tens to hundreds of watts is typical for an electrode with a diameter of approximately 200 to approximately 300 mm (millimeters, which approximately 7.874 to 11.81 inches).
  • Capacitive plasmas are usually very lightly ionized, resulting in limited dissociation of precursors and low deposition rates.
  • Much denser plasmas can be created using inductive discharges, in which an inductive coil excited with a high frequency signal induces an electric field within the discharge, accelerating electrons in the plasma itself rather than just at the sheath edge.
  • Electron cyclotron resonance reactors and helicon wave antennas have also been used to create high density discharges. Excitation powers of 10 kW (Watts) or more are often used in modern reactors.
  • Plasma deposition may be used to deposit films onto wafers containing metal layers or other temperature sensitive structures. Silicon dioxide can be deposited from
  • Plasma deposited silicon nitride formed from silane and ammonia or nitrogen, is also widely used, although it is important to note that it is not possible to deposit a pure nitride in this fashion.
  • Plasma nitrides always contain a large amount of hydrogen, which can be bonded to silicon (Si-H) or nitrogen (Si-NH); this hydrogen has an important influence on UV absorption, stability, mechanical stress, and electrical conductivity.
  • Oxide can also be deposited from
  • FIG. 2B depicts the process (200) for manufacturing the molding- system component (902; 908; 101; 998) used in the molding system (100) of FIG. 1.
  • the process (200) is used for making the molding- system component (902; 908; 101; 998) of the molding system (100) of FIG. 1.
  • the process (200) includes (but is not limited to): an application operation (202), including applying the Plasma Enhanced Chemical Vapor Deposition coating (994) to (either all and/or part of ) a melt channel (999) defined by the molding-system component (902; 908; 101; 998) of the molding system (100).
  • the process 200 is used to apply, at least in part, PECVD (Plasma Enhanced Chemical Vapor Deposition) coatings to the surface of the melt channel 999.
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • a PECVD coating is made by inserting parts into a chamber, and the external features of the part are coated.
  • the process 200 enables PECVD coatings to be applied to the walls of the melt channels by inserting gas, for example, into the sprue 103, applying a pulsed DC voltage to the manifold 102 which creates a plasma enhanced chemical reaction at the melt channel 999 surface.
  • the byproducts would then be evacuated through the drop locations (also known as the nozzle 104).
  • the PECVD coating reduces wear when molding abrasive resins, reduce flow resistance for molding shear sensitive resins and improve corrosion resistance for molding corrosive resins.
  • PECVD is also sometimes referred to as Plasma Assisted Chemical Vapor Deposition.
  • the process 200 may be adapted to apply the PECVD coating to internal geometries of the molding- system components which are in direct contact with the melt.
  • the process 200 includes, for example, inserting an item to be coated into a chamber.
  • the item to be coated to is heated to approximately 300 degrees Centigrade (approximately 572 degree
  • the process (200) is used to apply PECVD to the manifold (102), by inserting the manifold (102) into the coating chamber.
  • the manifold (102) would be heated with the manifold (102) heaters to a temperature of approximately less than 300 degrees Centigrade (approximately 572 degree Fahrenheit).
  • DC (direct current) electrical current would be pulsed on the manifold (102) to turn the melt channel (999) into hollow cathodes.
  • FIG. 3 depicts the schematic representation of the hot-runner component (102; 103; 104) used in the hot-runner system (101) of the molding system (100) of FIG. 1.
  • the hot-runner component (102; 103; 104) includes (but is not limited to): (i) a manifold (102), (ii) a nozzle (104), (iii) a sprue (103).

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

L'invention concerne un système (100) de moulage comprenant un composant (902 ; 908 ; 101 ; 998) de système de moulage définissant un chenal (999) de coulée, ledit chenal (999) de coulée comprenant une surface dotée au moins en partie d'un revêtement (994) obtenu par dépôt de vapeur chimique assisté par plasma. L'invention concerne également un processus (200) de fabrication du composant (902 ; 908 ; 101 ; 998) de système de moulage du système (100) de moulage, ledit processus (200) comportant une opération (202) d'application comportant une étape consistant à appliquer au moins partiellement un revêtement (994) obtenu par dépôt de vapeur chimique assisté par plasma à la surface du chenal (999) de coulée défini par le composant (902 ; 908 ; 101 ; 998) de système de moulage du système (100) de moulage.
PCT/US2010/049550 2009-11-23 2010-09-21 Système de moulage comprenant un composant de système de moulage définissant un chenal de coulée doté d'un revêtement obtenu par dépôt de vapeur chimique assisté par plasma WO2011062678A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26345809P 2009-11-23 2009-11-23
US61/263,458 2009-11-23

Publications (1)

Publication Number Publication Date
WO2011062678A1 true WO2011062678A1 (fr) 2011-05-26

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PCT/US2010/049550 WO2011062678A1 (fr) 2009-11-23 2010-09-21 Système de moulage comprenant un composant de système de moulage définissant un chenal de coulée doté d'un revêtement obtenu par dépôt de vapeur chimique assisté par plasma

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050053739A1 (en) * 1999-04-21 2005-03-10 Lee Robert A. Multilayer containers and preforms having barrier properties utilizing recycled material
US20050104242A1 (en) * 2002-11-06 2005-05-19 Mold-Masters Limited Injection nozzle with a removable heater device having one or more heating elements
US20080241298A1 (en) * 2007-03-27 2008-10-02 Mold-Masters (2007) Limited Hot Runner Nozzle Having Thermal Insert At Downstream End

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050053739A1 (en) * 1999-04-21 2005-03-10 Lee Robert A. Multilayer containers and preforms having barrier properties utilizing recycled material
US20050104242A1 (en) * 2002-11-06 2005-05-19 Mold-Masters Limited Injection nozzle with a removable heater device having one or more heating elements
US20080241298A1 (en) * 2007-03-27 2008-10-02 Mold-Masters (2007) Limited Hot Runner Nozzle Having Thermal Insert At Downstream End

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