WO2011052989A3 - 식각액 조성물 - Google Patents

식각액 조성물 Download PDF

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Publication number
WO2011052989A3
WO2011052989A3 PCT/KR2010/007417 KR2010007417W WO2011052989A3 WO 2011052989 A3 WO2011052989 A3 WO 2011052989A3 KR 2010007417 W KR2010007417 W KR 2010007417W WO 2011052989 A3 WO2011052989 A3 WO 2011052989A3
Authority
WO
WIPO (PCT)
Prior art keywords
weight
etching solution
solution composition
composition
acid
Prior art date
Application number
PCT/KR2010/007417
Other languages
English (en)
French (fr)
Other versions
WO2011052989A2 (ko
Inventor
양승재
이석준
권오병
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to JP2012536673A priority Critical patent/JP5753180B2/ja
Priority to CN201080049609.8A priority patent/CN102597162B/zh
Publication of WO2011052989A2 publication Critical patent/WO2011052989A2/ko
Publication of WO2011052989A3 publication Critical patent/WO2011052989A3/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/135—Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Weting (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

본 발명은 조성물 총 중량에 대하여, 인산 45 내지 70 중량%; 질산 2 내지 10 중량%; 초산 5 내지 25 중량%; 함불소 화합물 0.01 내지 3 중량%; 인산염 0.1 내지 5 중량%; 및 물 잔량을 포함하는 것을 특징으로 하는 In, Al 및 Mo를 포함하는 삼중막용 식각액 조성물에 관한 것이다.
PCT/KR2010/007417 2009-10-30 2010-10-27 식각액 조성물 WO2011052989A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012536673A JP5753180B2 (ja) 2009-10-30 2010-10-27 エッチング液組成物
CN201080049609.8A CN102597162B (zh) 2009-10-30 2010-10-27 蚀刻液组合物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0104418 2009-10-30
KR20090104418 2009-10-30
KR10-2010-0104831 2010-10-26
KR1020100104831A KR101805187B1 (ko) 2009-10-30 2010-10-26 식각액 조성물

Publications (2)

Publication Number Publication Date
WO2011052989A2 WO2011052989A2 (ko) 2011-05-05
WO2011052989A3 true WO2011052989A3 (ko) 2011-09-15

Family

ID=43922822

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/007417 WO2011052989A2 (ko) 2009-10-30 2010-10-27 식각액 조성물

Country Status (4)

Country Link
JP (1) JP5753180B2 (ko)
KR (1) KR101805187B1 (ko)
CN (1) CN102597162B (ko)
WO (1) WO2011052989A2 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101361839B1 (ko) * 2011-10-27 2014-02-11 한국항공대학교산학협력단 식각액 조성물, 및 다중금속막 식각 방법
KR101394469B1 (ko) * 2012-07-20 2014-05-13 한국항공대학교산학협력단 식각액 조성물, 및 다중금속막 식각 방법
KR101404511B1 (ko) * 2012-07-24 2014-06-09 플란제 에스이 식각액 조성물, 및 다중금속막 식각 방법
KR102091541B1 (ko) * 2014-02-25 2020-03-20 동우 화인켐 주식회사 유기 발광 표시 장치의 제조 방법
JP2016025321A (ja) * 2014-07-24 2016-02-08 関東化學株式会社 エッチング液組成物およびエッチング方法
KR102254561B1 (ko) * 2014-09-30 2021-05-21 동우 화인켐 주식회사 은 나노 와이어의 식각액 조성물
CN105463463B (zh) * 2015-11-25 2018-04-24 江阴江化微电子材料股份有限公司 一种AMOLED用ITO-Ag-ITO蚀刻液
KR102384563B1 (ko) * 2016-03-24 2022-04-08 동우 화인켐 주식회사 인듐 산화막용 식각 조성물
CN107620066A (zh) * 2017-09-14 2018-01-23 合肥惠科金扬科技有限公司 一种显示屏用酸性蚀刻液
CN109439329A (zh) * 2018-10-29 2019-03-08 苏州博洋化学股份有限公司 平板显示阵列制程用新型igzo蚀刻液
CN110195229B (zh) * 2019-06-21 2021-05-14 湖北兴福电子材料有限公司 一种钨和氮化钛金属薄膜的蚀刻液及其使用方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030078208A (ko) * 2002-03-28 2003-10-08 테크노세미켐 주식회사 평판디스플레이의 박막트랜지스터 형성을 위한 금속전극용식각액 조성물
KR20070077113A (ko) * 2006-01-20 2007-07-25 간토 가가꾸 가부시키가이샤 알루미늄계 금속막 및 몰리브덴계 금속막의 적층막용에칭액
KR20080079999A (ko) * 2007-02-28 2008-09-02 토소가부시키가이샤 에칭 방법 및 그것에 이용되는 에칭용 조성물
KR20080096145A (ko) * 2007-04-27 2008-10-30 주식회사 동진쎄미켐 박막 트랜지스터 액정 표시 장치용 식각 조성물
KR20090030225A (ko) * 2007-09-19 2009-03-24 나가세케무텍쿠스가부시키가이샤 에칭 조성물

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005163070A (ja) * 2003-11-28 2005-06-23 Sharp Corp エッチング液およびエッチング方法
KR101216651B1 (ko) * 2005-05-30 2012-12-28 주식회사 동진쎄미켐 에칭 조성물
JP4864434B2 (ja) * 2005-11-29 2012-02-01 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ液晶表示装置用エッチング組成物
JP2007157755A (ja) * 2005-11-30 2007-06-21 Kobe Steel Ltd 配線膜の形成方法
KR101310310B1 (ko) * 2007-03-15 2013-09-23 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 식각액 조성물

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030078208A (ko) * 2002-03-28 2003-10-08 테크노세미켐 주식회사 평판디스플레이의 박막트랜지스터 형성을 위한 금속전극용식각액 조성물
KR20070077113A (ko) * 2006-01-20 2007-07-25 간토 가가꾸 가부시키가이샤 알루미늄계 금속막 및 몰리브덴계 금속막의 적층막용에칭액
KR20080079999A (ko) * 2007-02-28 2008-09-02 토소가부시키가이샤 에칭 방법 및 그것에 이용되는 에칭용 조성물
KR20080096145A (ko) * 2007-04-27 2008-10-30 주식회사 동진쎄미켐 박막 트랜지스터 액정 표시 장치용 식각 조성물
KR20090030225A (ko) * 2007-09-19 2009-03-24 나가세케무텍쿠스가부시키가이샤 에칭 조성물

Also Published As

Publication number Publication date
CN102597162A (zh) 2012-07-18
KR20110047983A (ko) 2011-05-09
CN102597162B (zh) 2014-10-01
WO2011052989A2 (ko) 2011-05-05
JP5753180B2 (ja) 2015-07-22
JP2013509703A (ja) 2013-03-14
KR101805187B1 (ko) 2017-12-06

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