WO2011052909A2 - Composition d'attaque chimique - Google Patents

Composition d'attaque chimique Download PDF

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Publication number
WO2011052909A2
WO2011052909A2 PCT/KR2010/006953 KR2010006953W WO2011052909A2 WO 2011052909 A2 WO2011052909 A2 WO 2011052909A2 KR 2010006953 W KR2010006953 W KR 2010006953W WO 2011052909 A2 WO2011052909 A2 WO 2011052909A2
Authority
WO
WIPO (PCT)
Prior art keywords
metal film
aluminum
film
lanthanum
titanium
Prior art date
Application number
PCT/KR2010/006953
Other languages
English (en)
Korean (ko)
Other versions
WO2011052909A3 (fr
Inventor
이석준
신혜라
권오병
이유진
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to CN201080049723.0A priority Critical patent/CN102753652B/zh
Priority to JP2012536649A priority patent/JP5706434B2/ja
Publication of WO2011052909A2 publication Critical patent/WO2011052909A2/fr
Publication of WO2011052909A3 publication Critical patent/WO2011052909A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound

Definitions

  • the present invention relates to an etchant composition of a triple layer composed of an indium metal film, an aluminum-lanthanum alloy film, and a titanium metal film.
  • a process of forming a metal wiring on a substrate is typically a process of forming a metal film by sputtering, a process of forming a photoresist in a selective region by applying a photoresist on a metal film, exposing and developing the metal film, and a metal. It consists of a process of etching the film. Moreover, the washing
  • This etching process refers to a process of leaving a metal film in a selective region using a photoresist as a mask. As an etching process, dry etching using a plasma or the like, or wet etching using an etching solution is generally used.
  • a transparent conductive film which is an indium metal film, is mainly used as a pixel electrode.
  • a metal film including titanium is mainly used under the source / drain electrodes to bond the source / drain electrodes to the insulating film.
  • An object of the present invention is to provide an etchant composition capable of efficiently collectively etching a triple film made of an indium metal film, an aluminum-lanthanum alloy film, and a titanium metal film.
  • the present invention is 1 to 15% by weight of hydrogen peroxide, based on the total weight of the composition; 0.1 wt% to 10 wt% of an inorganic acid; 0.01 wt% to 5 wt% of a fluorine-containing compound; And an indium metal film, an aluminum-lanthanum alloy film, and a titanium metal film including an amount of water remaining therein.
  • the present invention comprises 2 to 12% by weight of hydrogen peroxide; 1 to 7 weight percent of inorganic acid; 0.1 wt% to 2 wt% of a fluorine-containing compound; And an indium metal film, an aluminum-lanthanum alloy film, and a titanium metal film including an amount of water remaining therein.
  • the etchant composition of the present invention is excellent in etching characteristics for each of the indium-based metal film, aluminum-lanthanum-based alloy film and titanium-based metal film.
  • the etching liquid composition of the present invention is excellent in etching characteristics of the aluminum-lanthanum-based alloy film, so that curling does not occur on the Al-La-based alloy film. It is possible to efficiently etch a triple layer consisting of.
  • the use of the etchant composition of the present invention can greatly increase the yield since the etching process is significantly simplified.
  • the etchant composition of the present invention includes hydrogen peroxide, an inorganic acid, a fluorine-containing compound, and water.
  • hydrogen peroxide plays a role of main oxidation.
  • the hydrogen peroxide is preferably included in an amount of 1 wt% to 15 wt%, more preferably 2 wt% to 12 wt%, based on the total weight of the composition. If the above range is satisfied, the surfaces of the indium metal film, the aluminum-lanthanum alloy film and the titanium metal film can be easily oxidized.
  • the inorganic acid in the present invention serves as a secondary oxidant.
  • the inorganic acid is preferably included in an amount of 0.1% to 10% by weight, more preferably 1% to 7% by weight based on the total weight of the composition.
  • the surfaces of the indium metal film, the aluminum-lanthanum alloy film, and the titanium metal film together with the hydrogen peroxide can be more easily oxidized. It also makes it easier to adjust the etch rate, side etch and taper angle.
  • the inorganic acid is preferably, but not limited to, one selected from nitric acid, sulfuric acid and mixtures thereof.
  • the fluorine-containing compound serves to etch the surfaces of the indium metal film, the aluminum-lanthanum alloy film, and the titanium metal film.
  • the fluorine-containing compound is preferably included in an amount of 0.01 wt% to 5 wt%, more preferably 0.1 wt% to 2 wt%, based on the total weight of the composition.
  • the fluorine-containing compound is preferably a compound capable of dissociating into fluorine ions or polyatomic fluorine ions in the dissolved state.
  • the fluorine-containing compound may be one or two or more selected from the group consisting of ammonium fluoride, sodium fluoride, potassium fluoride, ammonium bifluoride, sodium bifluoride, and potassium bifluoride.
  • Water included in the etchant composition of the present invention means deionized water.
  • a semiconductor process is used, Preferably water of 18 kPa / cm or more is used.
  • the water is included in the balance so that the total weight of the etchant composition of the present invention to 100% by weight relative to the total weight of the composition.
  • the etchant composition of the present invention may further include one or two or more selected from the group consisting of known additives, for example, an etching control agent, a surfactant, and a pH adjusting agent, in addition to the above-mentioned components.
  • the indium metal film means a transparent conductive film, which is an indium zinc oxide film (IZO) or an indium tin oxide film (ITO).
  • the aluminum-lanthanum-based alloy film means that the aluminum-lanthanum alloy film containing aluminum as a main component. More specifically, the aluminum-lanthanum-based alloy film refers to Al-La or Al-La-X including 90 atomic% or more of aluminum, 10 atomic% or less of La, and the remaining amount of other metals (X).
  • the other metal (X) is made of Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt and C It is preferable that it is 1 type, or 2 or more types selected from the group.
  • the titanium-based metal film means a titanium film or a titanium alloy film containing titanium as a main component.
  • an a-ITO / Al-La-Ni / Ti triple layer was deposited on a SiNx layer, and a photoresist patterned in a uniform shape was used.
  • etching liquid composition of Examples 1 to 7, Comparative Examples 1 to 6 was placed in an experimental equipment of a spray etching method (manufactured by SEMES, model name: ETCHER (TFT)), and warmed by setting the temperature to 30 ° C. Then, after the temperature reached 30 ⁇ 0.1 °C, the etching process was performed. Total etch time was given at 30% based on EPD. Insert the specimen, start spraying, and when the etching is complete, taken out, washed with deionized water, dried using a hot air drying apparatus, and removed the photoresist using a photoresist stripper (PR) stripper.
  • PR photoresist stripper
  • the etchant composition of Examples 1 to 7 has an excellent etching profile, no damage to the lower layer and no residue, resulting in excellent etching characteristics for the a-ITO / Al-La-Ni / Ti triple layer. It could be confirmed that.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

La présente invention concerne une composition d'attaque chimique pour attaquer chimiquement un film à trois couches constitué d'un film métallique à base d'indium, d'un film d'alliage à base d'aluminium-lanthane et d'un film métallique à base de titane, la composition d'attaque chimique comprenant de 1 à 15% en poids de peroxyde d'hydrogène; de 0,1 à 10% en poids d'acide inorganique; et de 0,01 à 5 % en poids d'un composé fluoré, le reste étant constitué d'eau.
PCT/KR2010/006953 2009-10-29 2010-10-12 Composition d'attaque chimique WO2011052909A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201080049723.0A CN102753652B (zh) 2009-10-29 2010-10-12 蚀刻液组成物
JP2012536649A JP5706434B2 (ja) 2009-10-29 2010-10-12 エッチング液組成物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20090103732 2009-10-29
KR10-2009-0103732 2009-10-29
KR1020100098368A KR101804573B1 (ko) 2009-10-29 2010-10-08 식각액 조성물
KR10-2010-0098368 2010-10-08

Publications (2)

Publication Number Publication Date
WO2011052909A2 true WO2011052909A2 (fr) 2011-05-05
WO2011052909A3 WO2011052909A3 (fr) 2011-09-01

Family

ID=43922758

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006953 WO2011052909A2 (fr) 2009-10-29 2010-10-12 Composition d'attaque chimique

Country Status (4)

Country Link
JP (1) JP5706434B2 (fr)
KR (1) KR101804573B1 (fr)
CN (1) CN102753652B (fr)
WO (1) WO2011052909A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102092687B1 (ko) * 2014-03-21 2020-03-24 동우 화인켐 주식회사 액정 표시 장치용 어레이 기판의 제조방법
KR102092352B1 (ko) * 2014-03-31 2020-03-23 동우 화인켐 주식회사 액정 표시 장치용 어레이 기판의 제조방법
CN114305069A (zh) * 2020-10-09 2022-04-12 武汉苏泊尔炊具有限公司 一种烹饪器具及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000028119A (ko) * 1998-10-30 2000-05-25 윤종용 반도체 제조장비 세정액
KR20060042738A (ko) * 2004-11-10 2006-05-15 삼성전자주식회사 저유전율 유전막을 제거하기 위한 식각 용액 및 이를이용한 저유전율 유전막 식각 방법
KR20060050581A (ko) * 2004-08-25 2006-05-19 삼성전자주식회사 인듐 산화막의 식각액 조성물 및 이를 이용한 식각 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001339072A (ja) * 2000-03-15 2001-12-07 Advanced Display Inc 液晶表示装置
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
JP5010873B2 (ja) * 2006-08-23 2012-08-29 関東化学株式会社 チタン、アルミニウム金属積層膜エッチング液組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000028119A (ko) * 1998-10-30 2000-05-25 윤종용 반도체 제조장비 세정액
KR20060050581A (ko) * 2004-08-25 2006-05-19 삼성전자주식회사 인듐 산화막의 식각액 조성물 및 이를 이용한 식각 방법
KR20060042738A (ko) * 2004-11-10 2006-05-15 삼성전자주식회사 저유전율 유전막을 제거하기 위한 식각 용액 및 이를이용한 저유전율 유전막 식각 방법

Also Published As

Publication number Publication date
CN102753652B (zh) 2014-12-10
KR20110047130A (ko) 2011-05-06
KR101804573B1 (ko) 2017-12-06
CN102753652A (zh) 2012-10-24
JP5706434B2 (ja) 2015-04-22
WO2011052909A3 (fr) 2011-09-01
JP2013509702A (ja) 2013-03-14

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