WO2011051256A2 - Système de couches en face arrière pour modules solaires à couches minces, module solaire à couches minces et procédé de fabrication d'un système de couches en face arrière - Google Patents

Système de couches en face arrière pour modules solaires à couches minces, module solaire à couches minces et procédé de fabrication d'un système de couches en face arrière Download PDF

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Publication number
WO2011051256A2
WO2011051256A2 PCT/EP2010/066114 EP2010066114W WO2011051256A2 WO 2011051256 A2 WO2011051256 A2 WO 2011051256A2 EP 2010066114 W EP2010066114 W EP 2010066114W WO 2011051256 A2 WO2011051256 A2 WO 2011051256A2
Authority
WO
WIPO (PCT)
Prior art keywords
layer
film solar
thin
backing layer
rear side
Prior art date
Application number
PCT/EP2010/066114
Other languages
German (de)
English (en)
Other versions
WO2011051256A3 (fr
Inventor
Andre Hedler
Christian Koitzsch
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to EP10771096A priority Critical patent/EP2494609A2/fr
Publication of WO2011051256A2 publication Critical patent/WO2011051256A2/fr
Publication of WO2011051256A3 publication Critical patent/WO2011051256A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to a backsheet system for thin film solar modules, a thin film solar module, and a method of making a backsheet system for thin film solar modules.
  • Dünn Anlagensoiarmodu are known from the prior art. As a rule, they consist of monolithically interconnected solar cells.
  • FIG. 1 shows schematically a cross-sectional view of an embodiment of a thin-film solar module.
  • the thin-film solar module comprises a front contact 102, a back contact 104 and an absorber 103. These layers were applied to a glass substrate 101 by means of large-area coating processes and patterned by laser process. Reference numerals 111, 112 and 113 illustrate the paths (patterns) formed by laser structuring.
  • the back contact 104 must meet certain requirements. On the one hand, the generated photocurrent should be dissipated as low as possible via the highest possible electrical transverse conductivity and made available to the consumer. On the other hand, it must be ensured that non-absorbed photons have as high an optical density as possible
  • FIG. 1 The light strikes the solar cell through a front glass 201.
  • the front glass is followed by a transparent, electrically conductive (TCO) front contact layer 202, which mostly consists of SnO 2 or ZnO.
  • TCO transparent, electrically conductive
  • aSi amorphous silicon 203
  • pc-Si microcrystalline silicon 204
  • absorbed light is reflected so as to once again pass through the absorber and be converted into a part of electrical energy.
  • zinc oxide is used as the back contact layer 205 by default.
  • ZnO zinc oxide
  • boron-doped ZnO is favored with a
  • Layer thickness of about 1.5 pm which is deposited by a chemical vapor deposition at low pressures (LPCVD) on the absorber.
  • LPCVD chemical vapor deposition at low pressures
  • ZnO aluminum-doped zinc oxide
  • PVD sputtering process
  • Variant B is illustrated in FIG.
  • the light hits through the front glass 301 on a TCO front contact layer 302, which consists mostly of Sn0 2 or ZnO.
  • a-Si, 303 amorphous silicon
  • pc-Si, 304 microcrystalline silicon
  • This is followed by a thin zinc oxide layer 305 of about 100 nm thickness, which was sputtered on.
  • This ZnO layer acts as a diffusion barrier and with a suitable choice of refractive index and layer thickness as optical element (interference layer, reduced plasmon absorption of the back contact).
  • the back contact 306 is made of highly reflective metals and additional adhesion and protection layers.
  • the reflecting metal is usually aluminum, for an absorber layer of a silicon ion
  • Tandem cells with absorber layers a amorphous silicon and microcrystalline silicon are usually provided with a silver back contact. The segmentation of the back contacts is then done by laser structuring.
  • there is an electrically conductive, highly reflecting metallic rear contact layer system 306 behind a thin reflection-enhancing TCO layer 305 (TCO transparent conductive oxide).
  • variant A has disadvantages.
  • the main disadvantage of variant A is the separation of electrical and optical requirements into two layers, with the reflective layer 206 behind the electrically conductive TCO layer 205.
  • the reflective layer 206 behind the electrically conductive TCO layer 205.
  • high doping and a high layer thickness of the TCO layer 205 are desirable.
  • the main disadvantage of a thin-film solar module according to variation B is the high susceptibility of the back contact for short circuits between the cells, which due to the high metallic conductivity lead to parallel leakage currents between the cells and finally adversely affect the module efficiency or the electric power that can be converted at the consumer.
  • the open trenches of the laser structuring of the metallic layer system lead to optical losses, since oblique light, which is transmitted in the region of the trench, can not be laterally reflected back into the absorber, except in the case of total reflection, but leaves the thin-film solar module. These open trenches can continue through subsequent process steps such. B. sandblasting edge stripping
  • metallic tinsel which arise through the laser structuring, can be used in further process steps, such.
  • the first object is achieved by a backsheet system according to claim 1.
  • the further objects are achieved by the subject matter of claims 4 and 5.
  • the dependent claims indicate preferred embodiments.
  • the invention provides a backsheet system for thin film solar modules having a back contact, the back contact having a conductive, light reflective, metallic backing layer for carrying electrical power.
  • a back-reflecting dielectric layer for improving the cell efficiency and for mechanically protecting the metallic backing layer is applied to the metallic backing layer, which layer does not necessarily have to be closed, but covers at least all laser structure trenches.
  • the retroreflective dielectric layer is made of a material having light-reflecting properties or particles, e.g. B. a white color.
  • This backing layer system has the advantage that the handling during subsequent process steps, such. As the edge deletion, transport and lamination, is improved. Ethylene vinyl acetate encapsulation films can be used with less risk because sensitive absorber layers are no longer exposed to the acids produced during vacuum lamination.
  • existing laser trenches in the metallic backing layer are filled by the retroreflective dielectric layer.
  • the invention comprises a thin-film solar module which comprises a back-side layer system according to the invention.
  • the invention includes a method of making a backsheet system for thin film solar modules having a back contact, the back contact comprising a conductive, light reflective, metallic backing layer for transporting electrical power.
  • the method according to the invention is characterized by the step of applying a retroreflective dielectric layer to the metallic backing layer for the optical and mechanical reinforcement of the metallic backing layer.
  • the step of applying a retroreflective dielectric layer comprises applying a white color to the metallic backing layer.
  • the step of applying a retroreflective dielectric layer or the step of applying a white color may be effected by means of a screen printing process.
  • the step of depositing fills trenches in the metallic backing layer. This allows back contact shorts
  • FIG. 4 shows a cross-sectional representation of an embodiment of a thin-film solar module according to the invention.
  • the layers largely correspond to the thin-film solar module according to FIG. 1 and have been provided with identical reference symbols.
  • a planar, not necessarily closed covering and filling layer 401 was applied to the metallic backing layer 104, which closes at least the laser trenches 113.
  • the covering and filling layer has optical properties
  • FIG. 5 illustrates an embodiment of the thin-film solar module according to the invention from a different perspective.
  • FIG. 5 comprises the layers of a thin-film solar module according to FIG. 3. If a layer in FIG. 5 bears the same reference number as in FIG. 3, it is the same or equivalent layer.
  • a retroreflective dielectric layer 501 has been applied to the metallic back layer 306 so as to optically optimize and mechanically protect the metallic backing layer 306.
  • the covering and filling layer is a material which corresponds to a white or light color
  • this retroreflective covering layer having insulating properties contains materials or particles which also reflect radiation outside the visible spectrum in order to increase the overall efficiency of the respective solar cell.
  • Another idea of the invention is that the applied supplementary layer, which existing structure trenches, in particular
  • the retroreflective layer also performs the function of a protective cover with respect to the conductive back layer underneath.

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un système de couches en face arrière pour modules solaires à couches minces comprenant un contact arrière. Le contact arrière présente une couche arrière conductrice, réfléchissante et structurée pour le transport du courant électrique. Selon l'invention, une couche diélectrique, rétrofléchissante, est appliquée sur la couche arrière métallique. L'invention porte également sur un module solaire à couches minces comprenant un système de couches en face arrière selon l'invention ainsi qu'un procédé de fabrication d'un système de couches en face arrière selon l'invention.
PCT/EP2010/066114 2009-10-27 2010-10-26 Système de couches en face arrière pour modules solaires à couches minces, module solaire à couches minces et procédé de fabrication d'un système de couches en face arrière WO2011051256A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10771096A EP2494609A2 (fr) 2009-10-27 2010-10-26 Système de couches en face arrière pour modules solaires à couches minces, module solaire à couches minces et procédé de fabrication d'un système de couches en face arrière

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102009050790 2009-10-27
DE102009050790.6 2009-10-27
DE102009056128.5 2009-11-27
DE102009056128A DE102009056128A1 (de) 2009-10-27 2009-11-27 Rückseitenschichtsystem für Dünnschichtsolarmodule, Dünnschichtsolarmodul und Verfahren zur Herstellung eines Rückseitenschichtsystems

Publications (2)

Publication Number Publication Date
WO2011051256A2 true WO2011051256A2 (fr) 2011-05-05
WO2011051256A3 WO2011051256A3 (fr) 2011-11-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/066114 WO2011051256A2 (fr) 2009-10-27 2010-10-26 Système de couches en face arrière pour modules solaires à couches minces, module solaire à couches minces et procédé de fabrication d'un système de couches en face arrière

Country Status (3)

Country Link
EP (1) EP2494609A2 (fr)
DE (1) DE102009056128A1 (fr)
WO (1) WO2011051256A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2348538A2 (fr) * 2010-01-22 2011-07-27 Jusung Engineering Co. Ltd. Cellule solaire et son procédé de fabrication

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011115659A1 (de) * 2011-09-28 2013-03-28 Osram Opto Semiconductors Gmbh Photovoltaischer Halbleiterchip
EP2922100A1 (fr) * 2014-03-21 2015-09-23 Hemain, Christopher Structure d'amélioration de l'absorption

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
US644189A (en) * 1899-02-27 1900-02-27 Paul Siefeldt Drying apparatus.
NL1013900C2 (nl) * 1999-12-21 2001-06-25 Akzo Nobel Nv Werkwijze voor de vervaardiging van een zonnecelfolie met in serie geschakelde zonnecellen.
JP2001345460A (ja) * 2000-03-29 2001-12-14 Sanyo Electric Co Ltd 太陽電池装置
US20050172997A1 (en) * 2004-02-06 2005-08-11 Johannes Meier Back contact and back reflector for thin film silicon solar cells
DE102004032810B4 (de) * 2004-07-07 2009-01-08 Saint-Gobain Glass Deutschland Gmbh Photovoltaische Solarzelle mit einer Schicht mit Licht streuenden Eigenschaften und Solarmodul
DE102007055733A1 (de) * 2007-12-07 2009-06-10 Kuraray Europe Gmbh Photovoltaikmodule mit reflektierenden Klebefolien

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2348538A2 (fr) * 2010-01-22 2011-07-27 Jusung Engineering Co. Ltd. Cellule solaire et son procédé de fabrication

Also Published As

Publication number Publication date
WO2011051256A3 (fr) 2011-11-24
DE102009056128A1 (de) 2011-04-28
EP2494609A2 (fr) 2012-09-05

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