WO2011043550A3 - 실리콘 잉곳 제조장치에 사용되는 냉각 제어 시스템 및 수냉로드 - Google Patents

실리콘 잉곳 제조장치에 사용되는 냉각 제어 시스템 및 수냉로드 Download PDF

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Publication number
WO2011043550A3
WO2011043550A3 PCT/KR2010/006495 KR2010006495W WO2011043550A3 WO 2011043550 A3 WO2011043550 A3 WO 2011043550A3 KR 2010006495 W KR2010006495 W KR 2010006495W WO 2011043550 A3 WO2011043550 A3 WO 2011043550A3
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WO
WIPO (PCT)
Prior art keywords
cooling
water
control system
water supply
manufacturing silicon
Prior art date
Application number
PCT/KR2010/006495
Other languages
English (en)
French (fr)
Other versions
WO2011043550A2 (ko
Inventor
이근택
박성은
박종훈
Original Assignee
주식회사 세미머티리얼즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 세미머티리얼즈 filed Critical 주식회사 세미머티리얼즈
Publication of WO2011043550A2 publication Critical patent/WO2011043550A2/ko
Publication of WO2011043550A3 publication Critical patent/WO2011043550A3/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

본 발명은 실리콘 잉곳 제조장치에 사용되는 냉각 제어 시스템 및 수냉로드에 관한 것으로, 본 발명의 냉각 제어 시스템은 도가니 탑재부 하부면의 중심으로부터 외측 방향으로 서로 이격되게 설치되는 적어도 2개의 수냉로드군과, 수냉로드군에 물 공급관을 통해 냉각수를 공급하는 냉각수 공급부와, 냉각수 공급부와 수냉로드군 사이에 연결된 물 공급관을 개폐시키는 밸브와, 제1, 제2 열감지부에서 감지된 발열온도에 따라 밸브의 개폐동작을 제어하는 밸브 제어기를 포함한다.
PCT/KR2010/006495 2009-10-06 2010-09-20 실리콘 잉곳 제조장치에 사용되는 냉각 제어 시스템 및 수냉로드 WO2011043550A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0094534 2009-10-06
KR1020090094534A KR100947835B1 (ko) 2009-10-06 2009-10-06 실리콘 잉곳 제조장치에 사용되는 냉각 제어 시스템 및 수냉로드

Publications (2)

Publication Number Publication Date
WO2011043550A2 WO2011043550A2 (ko) 2011-04-14
WO2011043550A3 true WO2011043550A3 (ko) 2011-07-14

Family

ID=42183376

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006495 WO2011043550A2 (ko) 2009-10-06 2010-09-20 실리콘 잉곳 제조장치에 사용되는 냉각 제어 시스템 및 수냉로드

Country Status (2)

Country Link
KR (1) KR100947835B1 (ko)
WO (1) WO2011043550A2 (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10182137A (ja) * 1996-12-26 1998-07-07 Kawasaki Steel Corp 太陽電池用シリコンの凝固精製方法及び装置
US6027563A (en) * 1996-02-24 2000-02-22 Ald Vacuum Technologies Gmbh Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber
JP2000290096A (ja) * 1999-04-08 2000-10-17 Mitsubishi Materials Corp 結晶シリコン製造装置
JP2007332022A (ja) * 2006-06-13 2007-12-27 Young Sang Cho 多結晶シリコンインゴット製造装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100445191B1 (ko) * 2001-11-15 2004-08-21 주식회사 실트론 단결정 잉곳 냉각용 수냉관 및 이를 이용한 단결정 잉곳성장장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6027563A (en) * 1996-02-24 2000-02-22 Ald Vacuum Technologies Gmbh Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber
JPH10182137A (ja) * 1996-12-26 1998-07-07 Kawasaki Steel Corp 太陽電池用シリコンの凝固精製方法及び装置
JP2000290096A (ja) * 1999-04-08 2000-10-17 Mitsubishi Materials Corp 結晶シリコン製造装置
JP2007332022A (ja) * 2006-06-13 2007-12-27 Young Sang Cho 多結晶シリコンインゴット製造装置

Also Published As

Publication number Publication date
WO2011043550A2 (ko) 2011-04-14
KR100947835B1 (ko) 2010-03-18

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