WO2011031024A3 - 대면적 기판용 마그네트론 스퍼터링 타겟 장치 - Google Patents

대면적 기판용 마그네트론 스퍼터링 타겟 장치 Download PDF

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Publication number
WO2011031024A3
WO2011031024A3 PCT/KR2010/005780 KR2010005780W WO2011031024A3 WO 2011031024 A3 WO2011031024 A3 WO 2011031024A3 KR 2010005780 W KR2010005780 W KR 2010005780W WO 2011031024 A3 WO2011031024 A3 WO 2011031024A3
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering target
sized substrate
target device
magnetron sputtering
magnet
Prior art date
Application number
PCT/KR2010/005780
Other languages
English (en)
French (fr)
Other versions
WO2011031024A2 (ko
Inventor
이춘수
강원구
이대종
Original Assignee
에이피시스템 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이피시스템 주식회사 filed Critical 에이피시스템 주식회사
Publication of WO2011031024A2 publication Critical patent/WO2011031024A2/ko
Publication of WO2011031024A3 publication Critical patent/WO2011031024A3/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

대면적 기판용 마그네트론 스퍼터링 타겟 장치에 관해 개시한다. 본 발명의 대면적 기판용 마그네트론 스퍼터링 타겟 장치는: 대면적 기판으로부터 이격되게 위치하며, 상기 대면적 기판의 박막 형성 부위를 모두 커버하는 형상을 갖는 스퍼터링 타겟과; 이동가능하게 상기 스퍼터링 타겟 부근에 위치한 마그네트와; 상기 마그네트를 이동시켜서 상기 스퍼터링 타겟의 전체 면을 스캔할 수 있도록 해주는 마그네트 이동수단을 구비하는 것을 특징으로 한다. 본 발명에 따르면, 챔버의 사이즈를 크게 늘릴 필요가 없어서 장비가 차지하는 면적의 측면에서 유리하다. 또한, 대면적 기판 또는 스퍼터링 타겟을 움직이지 않을 경우에 발생할 수도 있는 박막형성의 불균일, 비효율성을 마그네트 이동수단으로 해결할 수 있어서 형성된 박막의 질을 높이는 동시에 박막을 효율적으로 형성할 수 있다.
PCT/KR2010/005780 2009-09-10 2010-08-27 대면적 기판용 마그네트론 스퍼터링 타겟 장치 WO2011031024A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090085172A KR20110027187A (ko) 2009-09-10 2009-09-10 대면적 기판용 마그네트론 스퍼터링 타겟 장치
KR10-2009-0085172 2009-09-10

Publications (2)

Publication Number Publication Date
WO2011031024A2 WO2011031024A2 (ko) 2011-03-17
WO2011031024A3 true WO2011031024A3 (ko) 2011-07-07

Family

ID=43732911

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005780 WO2011031024A2 (ko) 2009-09-10 2010-08-27 대면적 기판용 마그네트론 스퍼터링 타겟 장치

Country Status (2)

Country Link
KR (1) KR20110027187A (ko)
WO (1) WO2011031024A2 (ko)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000014681A (ko) * 1998-08-24 2000-03-15 구자홍 스퍼터링 장치의 자석 이송장치
JP2000239841A (ja) * 1999-02-24 2000-09-05 Ulvac Japan Ltd スパッタリング方法と装置
KR20010076022A (ko) * 2000-01-24 2001-08-11 한전건 평판 마그네트론 스퍼터링 장치
KR20050018716A (ko) * 2003-08-12 2005-02-24 엘지전자 주식회사 마그네트론 스퍼터링 장치 및 그 동작방법
KR20050046170A (ko) * 2003-11-13 2005-05-18 엘지전자 주식회사 스퍼터링 장치
KR20090007795A (ko) * 2006-06-08 2009-01-20 시바우라 메카트로닉스 가부시키가이샤 마그네트론 스퍼터용 자석 장치, 마그네트론 스퍼터 장치 및 마그네트론 스퍼터 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000014681A (ko) * 1998-08-24 2000-03-15 구자홍 스퍼터링 장치의 자석 이송장치
JP2000239841A (ja) * 1999-02-24 2000-09-05 Ulvac Japan Ltd スパッタリング方法と装置
KR20010076022A (ko) * 2000-01-24 2001-08-11 한전건 평판 마그네트론 스퍼터링 장치
KR20050018716A (ko) * 2003-08-12 2005-02-24 엘지전자 주식회사 마그네트론 스퍼터링 장치 및 그 동작방법
KR20050046170A (ko) * 2003-11-13 2005-05-18 엘지전자 주식회사 스퍼터링 장치
KR20090007795A (ko) * 2006-06-08 2009-01-20 시바우라 메카트로닉스 가부시키가이샤 마그네트론 스퍼터용 자석 장치, 마그네트론 스퍼터 장치 및 마그네트론 스퍼터 방법

Also Published As

Publication number Publication date
WO2011031024A2 (ko) 2011-03-17
KR20110027187A (ko) 2011-03-16

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