WO2011023441A3 - Halbleiter-schichtmaterial und heteroübergangs-solarzelle - Google Patents

Halbleiter-schichtmaterial und heteroübergangs-solarzelle Download PDF

Info

Publication number
WO2011023441A3
WO2011023441A3 PCT/EP2010/059695 EP2010059695W WO2011023441A3 WO 2011023441 A3 WO2011023441 A3 WO 2011023441A3 EP 2010059695 W EP2010059695 W EP 2010059695W WO 2011023441 A3 WO2011023441 A3 WO 2011023441A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
layers
semiconductor layer
heterojunction solar
layer material
Prior art date
Application number
PCT/EP2010/059695
Other languages
English (en)
French (fr)
Other versions
WO2011023441A2 (de
Inventor
Thomas Wagner
Robert Roelver
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to CN201080038231.1A priority Critical patent/CN102576744B/zh
Priority to EP10728700A priority patent/EP2474041A2/de
Priority to US13/392,345 priority patent/US20120211064A1/en
Publication of WO2011023441A2 publication Critical patent/WO2011023441A2/de
Publication of WO2011023441A3 publication Critical patent/WO2011023441A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Halbleiter-Schichtmaterial, insbesondere zur Verwend ng als Emittermaterial für eine Heteroübergangs-Solarzelle, gebildet als Stapel aus jeweils einer Mehrzahl alternierend übereinander angeordneter erster und zweiter Schichten, wobei die ersten Schichten aus einem elementaren, polykristallinen Halbleiter und die zweite Schicht aus einer substöchiometrischen elektrisch isolierenden Verbindung, insbesondere einem Oxid, Carbid oder Nitrid, des Halbleiters bestehen und wobei durch eine Temperung die Grenzflächen zwischen den ersten und zweiten Schichten derart irregulär strukturiert sind, dass zwischen benachbarten, durch eine zweite Schicht voneinander getrennten ersten Schichten Mikrokontaktbereiche ausgebildet sind.
PCT/EP2010/059695 2009-08-31 2010-07-07 Halbleiter-schichtmaterial und heteroübergangs-solarzelle WO2011023441A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201080038231.1A CN102576744B (zh) 2009-08-31 2010-07-07 半导体层材料和异质结太阳能电池
EP10728700A EP2474041A2 (de) 2009-08-31 2010-07-07 Halbleiter-schichtmaterial und heteroübergangs-solarzelle
US13/392,345 US20120211064A1 (en) 2009-08-31 2010-07-07 Semiconductor Layer Material and Heterojunction Solar Cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009029017A DE102009029017A1 (de) 2009-08-31 2009-08-31 Halbleiter-Schichtmaterial und Heteroübergangs-Solarzelle
DE102009029017.6 2009-08-31

Publications (2)

Publication Number Publication Date
WO2011023441A2 WO2011023441A2 (de) 2011-03-03
WO2011023441A3 true WO2011023441A3 (de) 2012-03-29

Family

ID=43524809

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/059695 WO2011023441A2 (de) 2009-08-31 2010-07-07 Halbleiter-schichtmaterial und heteroübergangs-solarzelle

Country Status (5)

Country Link
US (1) US20120211064A1 (de)
EP (1) EP2474041A2 (de)
CN (1) CN102576744B (de)
DE (1) DE102009029017A1 (de)
WO (1) WO2011023441A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120318336A1 (en) * 2011-06-17 2012-12-20 International Business Machines Corporation Contact for silicon heterojunction solar cells
EP2595193A1 (de) * 2011-11-16 2013-05-22 Hitachi, Ltd. Mehrfach-Quantentopfstruktur
JP2014027119A (ja) * 2012-07-27 2014-02-06 Nippon Telegr & Teleph Corp <Ntt> 太陽電池

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080251116A1 (en) * 2004-04-30 2008-10-16 Martin Andrew Green Artificial Amorphous Semiconductors and Applications to Solar Cells

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080110486A1 (en) * 2006-11-15 2008-05-15 General Electric Company Amorphous-crystalline tandem nanostructured solar cells
US20080135089A1 (en) * 2006-11-15 2008-06-12 General Electric Company Graded hybrid amorphous silicon nanowire solar cells

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080251116A1 (en) * 2004-04-30 2008-10-16 Martin Andrew Green Artificial Amorphous Semiconductors and Applications to Solar Cells

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BERGHOFF BIRGER ET AL: "Improved charge transport through Si based multiple quantum wells with substoichiometric SiOx barrier layers", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 106, no. 8, 21 October 2009 (2009-10-21), pages 83706 - 83706, XP012127677, ISSN: 0021-8979, DOI: 10.1063/1.3238294 *
EUN-CHEL CHO ET AL: "Silicon quantum dot/crystalline silicon solar cells", NANOTECHNOLOGY, IOP, BRISTOL, GB, vol. 19, no. 24, 18 June 2008 (2008-06-18), pages 245201, XP020136613, ISSN: 0957-4484 *
ROLVER R ET AL: "Si/SiO2 multiple quantum wells for all silicon tandem cells: Conductivity and photocurrent measurements", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 516, no. 20, 30 August 2008 (2008-08-30), pages 6763 - 6766, XP022777850, ISSN: 0040-6090, [retrieved on 20071215], DOI: 10.1016/J.TSF.2007.12.087 *
SONG ET AL: "Structural, electrical and photovoltaic characterization of Si nanocrystals embedded SiC matrix and Si nanocrystals/c-Si heterojunction devices", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 92, no. 4, 30 January 2008 (2008-01-30), pages 474 - 481, XP022440288, ISSN: 0927-0248, DOI: 10.1016/J.SOLMAT.2007.11.002 *

Also Published As

Publication number Publication date
EP2474041A2 (de) 2012-07-11
CN102576744B (zh) 2016-02-10
CN102576744A (zh) 2012-07-11
WO2011023441A2 (de) 2011-03-03
US20120211064A1 (en) 2012-08-23
DE102009029017A1 (de) 2011-03-03

Similar Documents

Publication Publication Date Title
WO2011109146A3 (en) Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
JP2011066400A5 (de)
JP2016541114A5 (ja) 半導体構造、集積回路構造、及びそれらの製造方法
WO2010104758A3 (en) Methods for forming three-dimensional memory devices, and related structures
GB2493238A (en) Graphene channel-based devices and methods for fabrication thereof
TW200744218A (en) Semiconductor device and method of manufacturing the same
WO2012143784A3 (en) Semiconductor device and manufacturing method thereof
WO2010015310A3 (de) Solarzelle und verfahren zur herstellung einer solarzelle
WO2010094533A3 (de) Thermoelektrische vorrichtung
WO2010056479A3 (en) Flexible and stackable semiconductor die packages, systems using the same, and methods of making the same
WO2011028581A3 (en) Charge-trap based memory
WO2011072027A3 (en) Reverse side engineered iii-nitride devices
WO2013028685A3 (en) Semiconductor device structures including vertical transistor devices, arrays of vertical transistor devices, and methods of fabrication
WO2010114250A3 (en) Light emitting device having plurality of light emitting cells and method of fabricating the same
WO2009134095A3 (ko) 발광 소자 및 그 제조방법
WO2007053339A3 (en) Method for forming a semiconductor structure and structure thereof
WO2010093177A3 (en) Solar cell and method for manufacturing the same
TW200727497A (en) Dielectric isolation type semiconductor device and manufacturing method therefor
TW200701371A (en) Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same
WO2010078340A3 (en) Semiconductor devices including dual gate structures and methods of forming such semiconductor devices
WO2013105031A3 (fr) Procede pour realiser un module photovoltaïque avec deux etapes de gravure p2 et p3 et module photovoltaïque correspondant
WO2011091959A3 (de) Verfahren zur lokalen hochdotierung und kontaktierung einer halbleiterstruktur, welche eine solarzelle oder eine vorstufe einer solarzelle ist
WO2010142880A3 (fr) Micro-structure pour générateur thermoélectrique à effet seebeck et procédé de fabrication d&#39;une telle micro-structure
WO2012165903A3 (ko) 반도체 발광 소자，그 제조 방법，이를 포함하는 반도체 발광 소자 패키지 및 레이저 가공 장치
WO2008106284A3 (en) Microelectronic assembly with improved isolation voltage performance and a method for forming the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080038231.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10728700

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2010728700

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 13392345

Country of ref document: US