WO2011021546A1 - カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法 - Google Patents

カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法 Download PDF

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Publication number
WO2011021546A1
WO2011021546A1 PCT/JP2010/063598 JP2010063598W WO2011021546A1 WO 2011021546 A1 WO2011021546 A1 WO 2011021546A1 JP 2010063598 W JP2010063598 W JP 2010063598W WO 2011021546 A1 WO2011021546 A1 WO 2011021546A1
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WO
WIPO (PCT)
Prior art keywords
chalcogen compound
powder
less
compound powder
chalcogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2010/063598
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English (en)
French (fr)
Japanese (ja)
Inventor
雄一 石川
剛聡 藤野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dowa Holdings Co Ltd
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Dowa Holdings Co Ltd
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Filing date
Publication date
Application filed by Dowa Holdings Co Ltd filed Critical Dowa Holdings Co Ltd
Publication of WO2011021546A1 publication Critical patent/WO2011021546A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • chalcogen compound powders containing chalcogen-based elements Cu (In) (Ga) .Se. (S) compound nanoparticles (nanocrystals) containing copper (Cu) and indium (In) and selenium (Se) are: It is expected to be used as a thin film to manufacture solar cells.
  • a paste containing nanoparticles (nanocrystals) of a Cu • In • (Ga) • Se • (S) compound can be applied onto a substrate and fired.
  • (Ga) and (S) in the notation of Cu ⁇ In ⁇ (Ga) ⁇ Se ⁇ (S) indicate that gallium (Ga) and sulfur (S) need not be included (hereinafter referred to as “Ga” and “S”). The same).
  • As a method for obtaining a powder of Cu • In • (Ga) • Se • (S) compound an ingot obtained by casting a Cu—In—Ga—Se quaternary alloy molten metal is pulverized, and Cu—In— A method for producing a Ga-Se quaternary alloy powder is known. (For example, refer to Patent Document 1).
  • the particle diameter of the Cu—In—Ga—Se quaternary alloy powder obtained by the method of Patent Document 1 is about 100 mesh under, and a powder having an average particle diameter of several ⁇ m or less cannot be obtained. Further, in a method obtained by a mechanical chemical process using a planetary ball mill, a powder having an average particle size of 0.5 ⁇ m or less has not been obtained.
  • the Cu ⁇ In ⁇ (Ga) ⁇ Se ⁇ (S) compound powder can be made into a paste, applied onto a substrate, and fired to obtain a thin film for solar cell use.
  • Cu ⁇ In ⁇ (Ga) ⁇ Se ⁇ (S) compound powder will be described as an example of the chalcogen compound powder, but Cu ⁇ In ⁇ (Ga) ⁇ (Se) ⁇ S compound powder may be used. It can be implemented similarly.
  • the metal source used as a raw material is a composite hydroxide of copper and indium or a powder of composite hydroxide of copper, indium and gallium.
  • the composite hydroxide powder can be produced by dissolving a metal salt constituting the composite hydroxide in a solvent and adding an alkali.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
PCT/JP2010/063598 2009-08-21 2010-08-04 カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法 Ceased WO2011021546A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009192460A JP2011042537A (ja) 2009-08-21 2009-08-21 カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法
JP2009-192460 2009-08-21

Publications (1)

Publication Number Publication Date
WO2011021546A1 true WO2011021546A1 (ja) 2011-02-24

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PCT/JP2010/063598 Ceased WO2011021546A1 (ja) 2009-08-21 2010-08-04 カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法

Country Status (2)

Country Link
JP (1) JP2011042537A (https=)
WO (1) WO2011021546A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012077242A1 (ja) * 2010-12-07 2012-06-14 Ｄｏｗａホールディングス株式会社 カルコゲン化合物粉、カルコゲン化合物ペースト、カルコゲン化合物粉の製造方法、カルコゲン化合物ペーストの製造方法およびカルコゲン化合物薄膜の製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5767447B2 (ja) 2010-06-29 2015-08-19 株式会社コベルコ科研 Ｃｕ、Ｉｎ、ＧａおよびＳｅの元素を含有する粉末の製造方法、及びＣｕ、Ｉｎ、ＧａおよびＳｅの元素を含有するスパッタリングターゲット
JP5713743B2 (ja) * 2011-03-22 2015-05-07 Ｄｏｗａエレクトロニクス株式会社 セレン化銅粒子粉末およびその製造方法
JP5713756B2 (ja) * 2011-03-30 2015-05-07 Ｄｏｗａエレクトロニクス株式会社 セレン化銅粒子粉末およびその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07226410A (ja) * 1994-02-14 1995-08-22 Katsuaki Sato カルコパイライト型化合物の薄膜の作製方法及びその薄膜を有した太陽電池
JPH08510359A (ja) * 1993-04-12 1996-10-29 ミッドウエスト リサーチ インスティチュート 気相再結晶による半導体デバイス用高品質薄膜Ｃｕ（Ｉｎ，Ｇａ）Ｓｅ▲下２▼
JP2007521221A (ja) * 2003-12-22 2007-08-02 ショイテン グラースグループ Ｃｕ（Ｉｎ，Ｇａ）Ｓｅ２単結晶パウダーの製造方法、およびそのパウダーを含む単粒子膜太陽電池

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08510359A (ja) * 1993-04-12 1996-10-29 ミッドウエスト リサーチ インスティチュート 気相再結晶による半導体デバイス用高品質薄膜Ｃｕ（Ｉｎ，Ｇａ）Ｓｅ▲下２▼
JPH07226410A (ja) * 1994-02-14 1995-08-22 Katsuaki Sato カルコパイライト型化合物の薄膜の作製方法及びその薄膜を有した太陽電池
JP2007521221A (ja) * 2003-12-22 2007-08-02 ショイテン グラースグループ Ｃｕ（Ｉｎ，Ｇａ）Ｓｅ２単結晶パウダーの製造方法、およびそのパウダーを含む単粒子膜太陽電池

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012077242A1 (ja) * 2010-12-07 2012-06-14 Ｄｏｗａホールディングス株式会社 カルコゲン化合物粉、カルコゲン化合物ペースト、カルコゲン化合物粉の製造方法、カルコゲン化合物ペーストの製造方法およびカルコゲン化合物薄膜の製造方法

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