WO2011021546A1 - カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法 - Google Patents
カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法 Download PDFInfo
- Publication number
- WO2011021546A1 WO2011021546A1 PCT/JP2010/063598 JP2010063598W WO2011021546A1 WO 2011021546 A1 WO2011021546 A1 WO 2011021546A1 JP 2010063598 W JP2010063598 W JP 2010063598W WO 2011021546 A1 WO2011021546 A1 WO 2011021546A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chalcogen compound
- powder
- less
- compound powder
- chalcogen
- Prior art date
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- 239000000843 powder Substances 0.000 title claims abstract description 133
- 150000001786 chalcogen compounds Chemical class 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000011669 selenium Substances 0.000 claims abstract description 59
- 239000002245 particle Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 21
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- 229910052738 indium Inorganic materials 0.000 claims abstract description 16
- 229910000000 metal hydroxide Inorganic materials 0.000 claims abstract description 16
- 150000004692 metal hydroxides Chemical class 0.000 claims abstract description 16
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011164 primary particle Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 10
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 7
- 239000011593 sulfur Substances 0.000 claims abstract description 7
- 229940065287 selenium compound Drugs 0.000 claims abstract description 5
- 150000003343 selenium compounds Chemical class 0.000 claims abstract description 5
- 150000003464 sulfur compounds Chemical class 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims description 49
- 239000007789 gas Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 239000002612 dispersion medium Substances 0.000 claims description 8
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 7
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 6
- 229910000058 selane Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 125000003158 alcohol group Chemical group 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 27
- 239000013078 crystal Substances 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 7
- 239000002105 nanoparticle Substances 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 34
- 239000002131 composite material Substances 0.000 description 31
- 150000001875 compounds Chemical class 0.000 description 29
- 239000010409 thin film Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 150000003839 salts Chemical class 0.000 description 12
- 239000002904 solvent Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 150000002736 metal compounds Chemical class 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229910052798 chalcogen Inorganic materials 0.000 description 6
- 150000001787 chalcogens Chemical class 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000000706 filtrate Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000010298 pulverizing process Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 239000005416 organic matter Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000002159 nanocrystal Substances 0.000 description 3
- 229910002059 quaternary alloy Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002471 indium Chemical class 0.000 description 2
- IGUXCTSQIGAGSV-UHFFFAOYSA-K indium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[In+3] IGUXCTSQIGAGSV-UHFFFAOYSA-K 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 241000282376 Panthera tigris Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 150000002258 gallium Chemical class 0.000 description 1
- -1 gallium salt Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- chalcogen compound powders containing chalcogen-based elements Cu (In) (Ga) .Se. (S) compound nanoparticles (nanocrystals) containing copper (Cu) and indium (In) and selenium (Se) are: It is expected to be used as a thin film to manufacture solar cells.
- a paste containing nanoparticles (nanocrystals) of a Cu • In • (Ga) • Se • (S) compound can be applied onto a substrate and fired.
- (Ga) and (S) in the notation of Cu ⁇ In ⁇ (Ga) ⁇ Se ⁇ (S) indicate that gallium (Ga) and sulfur (S) need not be included (hereinafter referred to as “Ga” and “S”). The same).
- As a method for obtaining a powder of Cu • In • (Ga) • Se • (S) compound an ingot obtained by casting a Cu—In—Ga—Se quaternary alloy molten metal is pulverized, and Cu—In— A method for producing a Ga-Se quaternary alloy powder is known. (For example, refer to Patent Document 1).
- the particle diameter of the Cu—In—Ga—Se quaternary alloy powder obtained by the method of Patent Document 1 is about 100 mesh under, and a powder having an average particle diameter of several ⁇ m or less cannot be obtained. Further, in a method obtained by a mechanical chemical process using a planetary ball mill, a powder having an average particle size of 0.5 ⁇ m or less has not been obtained.
- the Cu ⁇ In ⁇ (Ga) ⁇ Se ⁇ (S) compound powder can be made into a paste, applied onto a substrate, and fired to obtain a thin film for solar cell use.
- Cu ⁇ In ⁇ (Ga) ⁇ Se ⁇ (S) compound powder will be described as an example of the chalcogen compound powder, but Cu ⁇ In ⁇ (Ga) ⁇ (Se) ⁇ S compound powder may be used. It can be implemented similarly.
- the metal source used as a raw material is a composite hydroxide of copper and indium or a powder of composite hydroxide of copper, indium and gallium.
- the composite hydroxide powder can be produced by dissolving a metal salt constituting the composite hydroxide in a solvent and adding an alkali.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-192460 | 2009-08-21 | ||
| JP2009192460A JP2011042537A (ja) | 2009-08-21 | 2009-08-21 | カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2011021546A1 true WO2011021546A1 (ja) | 2011-02-24 |
Family
ID=43607001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2010/063598 WO2011021546A1 (ja) | 2009-08-21 | 2010-08-04 | カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2011042537A (enrdf_load_stackoverflow) |
| WO (1) | WO2011021546A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012077242A1 (ja) * | 2010-12-07 | 2012-06-14 | Ｄｏｗａホールディングス株式会社 | カルコゲン化合物粉、カルコゲン化合物ペースト、カルコゲン化合物粉の製造方法、カルコゲン化合物ペーストの製造方法およびカルコゲン化合物薄膜の製造方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5767447B2 (ja) | 2010-06-29 | 2015-08-19 | 株式会社コベルコ科研 | Ｃｕ、Ｉｎ、ＧａおよびＳｅの元素を含有する粉末の製造方法、及びＣｕ、Ｉｎ、ＧａおよびＳｅの元素を含有するスパッタリングターゲット |
| JP5713743B2 (ja) * | 2011-03-22 | 2015-05-07 | Ｄｏｗａエレクトロニクス株式会社 | セレン化銅粒子粉末およびその製造方法 |
| JP5713756B2 (ja) * | 2011-03-30 | 2015-05-07 | Ｄｏｗａエレクトロニクス株式会社 | セレン化銅粒子粉末およびその製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07226410A (ja) * | 1994-02-14 | 1995-08-22 | Katsuaki Sato | カルコパイライト型化合物の薄膜の作製方法及びその薄膜を有した太陽電池 |
| JPH08510359A (ja) * | 1993-04-12 | 1996-10-29 | ミッドウエスト リサーチ インスティチュート | 気相再結晶による半導体デバイス用高品質薄膜Ｃｕ（Ｉｎ，Ｇａ）Ｓｅ▲下２▼ |
| JP2007521221A (ja) * | 2003-12-22 | 2007-08-02 | ショイテン グラースグループ | Ｃｕ（Ｉｎ，Ｇａ）Ｓｅ２単結晶パウダーの製造方法、およびそのパウダーを含む単粒子膜太陽電池 |
-
2009
- 2009-08-21 JP JP2009192460A patent/JP2011042537A/ja not_active Withdrawn
-
2010
- 2010-08-04 WO PCT/JP2010/063598 patent/WO2011021546A1/ja active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08510359A (ja) * | 1993-04-12 | 1996-10-29 | ミッドウエスト リサーチ インスティチュート | 気相再結晶による半導体デバイス用高品質薄膜Ｃｕ（Ｉｎ，Ｇａ）Ｓｅ▲下２▼ |
| JPH07226410A (ja) * | 1994-02-14 | 1995-08-22 | Katsuaki Sato | カルコパイライト型化合物の薄膜の作製方法及びその薄膜を有した太陽電池 |
| JP2007521221A (ja) * | 2003-12-22 | 2007-08-02 | ショイテン グラースグループ | Ｃｕ（Ｉｎ，Ｇａ）Ｓｅ２単結晶パウダーの製造方法、およびそのパウダーを含む単粒子膜太陽電池 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012077242A1 (ja) * | 2010-12-07 | 2012-06-14 | Ｄｏｗａホールディングス株式会社 | カルコゲン化合物粉、カルコゲン化合物ペースト、カルコゲン化合物粉の製造方法、カルコゲン化合物ペーストの製造方法およびカルコゲン化合物薄膜の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011042537A (ja) | 2011-03-03 |
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