WO2011021281A1

WO2011021281A1 - Arc evaporation source, and vacuum evaporation apparatus

Info

Publication number: WO2011021281A1
Application number: PCT/JP2009/064485
Authority: WO
Inventors: 智弘大丸; 隆司三上
Original assignee: 日新電機株式会社
Priority date: 2009-08-19
Filing date: 2009-08-19
Publication date: 2011-02-24
Also published as: JP5494663B2; JPWO2011021281A1

Abstract

Provided is an arc evaporation source comprising a magnetic field generating annular magnet for generating lines of magnetic field which intersect a cathode evaporation surface and control an arc spot position on the evaporation surface. The annular magnet has an internal diameter larger than the external diameter of a cathode. As viewed in a direction perpendicular to the cathode evaporation surface, the annular magnet is arranged to sheathe the cathode while being aligned with the cathode center axis, and arranged in the atmosphere at the back of the back surface thereof opposite to the cathode evaporation surface. The arc evaporation source acts as a magnet capable of providing a first magnetic pole on one side in the center axis direction and a second magnetic pole having the polarity opposite to that of the first magnetic pole on the other side. Further provided is a vacuum evaporation apparatus equipped with the arc evaporation source.

Description

Arc evaporation source and vacuum evaporation system

The present invention relates to a film forming apparatus for forming a film on an article such as a molding die used for molding automobile parts, parts of various machines other than automobiles, various tools, automobile parts, etc., among others, arc PVD (arc type physics) The present invention relates to a vacuum vapor deposition apparatus using a general vapor deposition and an arc evaporation source used in the apparatus.

By forming a film on the surface of an article, the properties of the article, such as wear resistance, slidability with other articles, chemical stability, optical properties, etc., are improved, and the performance required for the article is further improved. This is widely used for automobile parts, various machine parts (for example, sliding parts), various tools, molds such as molds, and medical articles and members.

As one of such surface treatment methods, a plasma containing an ionized cathode material as well as vaporizing the cathode material by vacuum arc discharge between the cathode and the anode made of a material containing film constituent atoms and usable as a cathode material. Is generated, and the ionized cathode material is made to fly to the article to be deposited to form a film on the article. It has been known.

Film formation by such arc type ion plating has advantages such as good adhesion of the film to the article to be deposited, high film formation speed, and high film productivity, and is suitable for surface treatment of various articles. It is used. *

By the way, in arc type ion plating, the arc spot of arc discharge exists on the evaporation surface of the cathode, so that the cathode material can be melted and evaporated, but if the arc spot jumps out of the cathode evaporation surface, The arc disappears, film formation cannot be continued, and film productivity decreases. Further, when the arc disappears in this way, the arc is generated again and the film formation is resumed. However, the quality of the film formed by the repeated arc extinction and arc lighting may be deteriorated.

Furthermore, experience has also shown that when the arc spot moves from the cathode evaporation surface and goes around the cathode side surface, giant molten particles called droplets are likely to be generated.

In addition, when the arc spot locally stagnates on the evaporation surface of the cathode, the arc spot stagnation part of the cathode becomes high temperature, and droplets are likely to be generated.

When the droplets adhere to the film-formed article or the film being formed on the article, the surface of the film becomes rough, and the performance required for the film, such as the sliding characteristics and wear resistance of the film, is reduced. .

In addition, if the arc spot is locally stagnated on the evaporation surface of the cathode, the cathode evaporation surface cannot be consumed in a uniform manner as a whole, making it difficult to effectively use the cathode material as a whole. The formation cost is high.

In Japanese Patent No. 3728140, an arc spot of arc discharge tends to move in the direction in which the magnetic lines of force are inclined on the evaporation surface of the cathode, and aims to solve the above problems.

That is, in this publication, by providing a magnetic field generation source that generates magnetic field lines that intersect substantially perpendicularly to the evaporation surface of the cathode and disposing a ring-shaped magnetic body through an insulating portion so as to surround the outer periphery of the cathode, An arc evaporation source is described in which a magnetic field having a magnetic field line that forms an acute inward direction toward the center of the evaporation surface with respect to the evaporation surface at the peripheral edge of the cathode, thereby suppressing the jumping of the arc spot from the evaporation surface. ing.

Further, in this publication, the magnetic force line direction changing means is arranged on the back side of the central part of the cathode, and the magnetic force line direction changing means causes the line of magnetic force intersecting the evaporation surface at the central part of the evaporation surface among the magnetic force lines generated by the magnetic field generation source. The direction is changed to a direction that inclines outward toward the peripheral side of the evaporation surface with respect to the normal standing on the evaporation surface, thereby suppressing the arc spot from staying in the center of the evaporation surface and generating droplets. It is described.

Japanese Patent No. 3728140

However, according to the arc evaporation source described in Japanese Patent No. 3728140, the magnetic field generating source that generates the magnetic lines of force that intersects the evaporation surface of the cathode substantially perpendicularly is disposed in the vicinity of the cathode in the vacuum vessel. It is directly affected by the heat generated from the arc spot.

When the magnetic field generation source is heated by the heat generated from the arc spot, the magnetic force tends to deteriorate or disappear, and it may be difficult to form an effective magnetic field. This tendency is particularly great when the magnetic field generation source is a permanent magnet. Although it is conceivable to cool the magnetic field generation source with a cooling means, the arc evaporation source becomes complicated and expensive.

Also, it is known that the moving speed of the arc spot is proportional to the component of the arc spot that is parallel to the evaporation surface of the magnetic flux density. However, if the magnetic flux density is insufficient, the moving speed of the arc spot decreases, Tends to stagnate locally, and droplets are likely to occur.

Therefore, the present invention is an arc evaporation source for a vacuum evaporation apparatus for evaporating a cathode material and generating a plasma containing an ionized cathode material by vacuum arc discharge between the cathode and the anode, and has the following advantages. Providing a source is a first problem.

(A) It is possible to suppress arc extinguishing from the cathode evaporation surface of the arc spot and suppress arc extinguishing due to the popping out, and when applied to a vacuum deposition apparatus, it is possible to form a film with high productivity by suppressing arc extinguishing due to the jumping out. It is possible to suppress deterioration of film quality due to arc extinction and arc resumption.
(B) The generation of droplets can be suppressed by suppressing the wraparound of the arc spot to the cathode side surface and the local stagnation of the arc spot on the cathode evaporation surface, and the generation of droplets can be suppressed when applied to a vacuum deposition apparatus. Thus, deterioration of film quality due to droplets can be suppressed.
(C) Since it is possible to suppress the sneaking of the arc spot to the side of the cathode and the local stagnation of the arc spot on the cathode evaporation surface, the cathode material can be effectively used as much as desired, and the film formation cost can be reduced as much as possible. .

The present invention also includes an arc evaporation source that evaporates the cathode material by vacuum arc discharge between the cathode and the anode and generates a plasma containing the ionized cathode material, and the ionized cathode material generated by the arc evaporation source includes It is a vacuum evaporation system that forms a film on an article by flying to the article to be deposited, which can suppress arc extinction and droplet generation at the arc evaporation source, and can effectively use the cathode material at the arc evaporation source. Therefore, it is a second object to provide a vacuum deposition apparatus that can form a high-quality film with good productivity and low cost.

In order to solve the first problem, the present invention provides:
An arc evaporation source for a vacuum evaporation apparatus that evaporates a cathode material by a vacuum arc discharge between a cathode and an anode and generates a plasma containing an ionized cathode material, by vacuum arc discharge at an evaporation surface of the cathode A magnetic field forming annular magnet for generating magnetic field lines intersecting the evaporation surface for controlling the position of the arc spot, the annular magnet having an inner diameter larger than the outer diameter of the cathode, and the evaporation surface of the cathode; When viewed from a direction perpendicular to the cathode, the cathode is disposed so as to be fitted with the central axis aligned with the cathode, and is disposed in the atmosphere behind the back surface opposite to the evaporation surface of the cathode. The first magnetic pole can be provided on one side in the axial direction, and the second magnetic pole having the opposite polarity to the first magnetic pole can be provided on the opposite side. In this case, a magnetic field line is generated that tilts at an acute angle to the center of the evaporation surface with respect to the evaporation surface, and a magnetic field that generates a magnetic field line that tilts at an acute angle to the periphery of the evaporation surface at the center of the evaporation surface. An arc evaporation source which is a magnet to be formed is provided.

In order to solve the second problem, the present invention
It includes an arc evaporation source that evaporates the cathode material by vacuum arc discharge between the cathode and the anode and generates plasma containing the ionized cathode material, and the ionized cathode material generated by the arc evaporation source flies to the article to be deposited. There is provided a vacuum vapor deposition apparatus for forming a film on the article, and employing the arc evaporation source according to the present invention as an arc evaporation source.

It is a figure showing roughly an example of a vacuum evaporation system concerning the present invention. It is a figure which shows typically the outline of the state of the magnetic field in the arc evaporation source of the vacuum evaporation system of FIG. It is a figure which shows schematically the other example of the vacuum evaporation system which concerns on this invention. It is a figure which shows typically the outline of the state of the magnetic field in the arc evaporation source of the vacuum evaporation system of FIG. It is a figure which shows schematically the further another example of the vacuum evaporation system which concerns on this invention. In the arc evaporation source, when only a magnetic field forming magnet is employed as shown in FIGS. 1 and 2, and when both a magnetic field forming magnet and a magnetic force enhancing magnet are employed as shown in FIGS. 3 and 4, It is a figure which shows the radial direction component in the cathode evaporation surface of magnetic flux density.

101, 102, 103 Vacuum evaporation apparatus 1 Vacuum container 11 Container

outer wall

2, 2 ', 2 "Arc evaporation source 20 Cathode 20S Cathode evaporation surface ss Cathode side surface 21 Cathode holder 211 Space 22 Insulating member 23 Holding member 24 Arc discharge power supply 25 Trigger Electrode 26 Resistance 3 Article holder W Article for film formation (film formation article)
4 Supporting Unit 5 Driving Unit 6 Bias Power Source 7 Gas Introducing Unit EX Exhaust Device M Annular Magnet for Magnetic Field Formation m Magnetic Strength Enhancing Magnet R Nonmagnetic Refractory Metal Ring

As an example of an embodiment of the present invention, the following first, second and third arc evaporation sources and a vacuum deposition apparatus are provided.

[1] Arc evaporation source (1) First arc evaporation source An arc evaporation source for a vacuum evaporation apparatus that evaporates a cathode material and generates a plasma containing an ionized cathode material by a vacuum arc discharge between the cathode and the anode. A magnetic field forming annular magnet for generating magnetic field lines intersecting the evaporation surface for position control of an arc spot by vacuum arc discharge on the evaporation surface of the cathode, The inner diameter is larger than the outer diameter of the cathode, and when viewed from the direction perpendicular to the evaporation surface of the cathode, the cathode is arranged so as to be fitted with the central axis aligned with the cathode, and on the side opposite to the evaporation surface of the cathode The first magnetic pole is provided on one side in the central axis direction and the second polarity is opposite to the first magnetic pole on the opposite side. Magnetic poles can be provided, and magnetic field lines that are inclined at an acute angle with respect to the evaporation surface at the central portion of the evaporation surface are generated at the peripheral portion of the evaporation surface of the cathode and at the peripheral portion of the evaporation surface with respect to the evaporation surface An arc evaporation source that is a magnet that forms a magnetic field that generates magnetic lines of force that tilt at an acute angle.

The annular magnet in the arc evaporation source may be a permanent magnet, an electromagnet, a combination of them, or a combination of a plurality of magnets.

As described above, the arc spot due to the arc discharge on the cathode evaporation surface in the arc evaporation source has a property of easily moving in the direction in which the magnetic field lines are inclined on the evaporation surface of the cathode.
According to the arc evaporation source according to the present invention, the annular magnet can generate magnetic lines of force inclined at an acute angle with respect to the evaporation surface at the central portion of the evaporation surface at the peripheral portion of the cathode evaporation surface. Can move the arc spot toward the center of the evaporation surface by such magnetic field lines. Thus, it is possible to suppress the arc spot from jumping out from the evaporation surface and the wraparound to the cathode side surface following the evaporation surface.

On the other hand, in the central part of the evaporation surface, the annular magnet can generate magnetic lines of force inclined at an acute angle to the peripheral part of the evaporation surface with respect to the evaporation surface, and the arc spot is evaporated by such magnetic field lines in the central part of the evaporation surface. It can be moved to the surface periphery side. Thus, it is possible to suppress the stagnation of the arc spot locally at or near the center of the evaporation surface.
In this way, the arc spot can be run entirely on the evaporation surface.

Further, since the annular magnet is disposed in the atmosphere behind the back surface of the cathode, the arc spot is projected and stagnated on the cathode evaporation surface without being affected by heat from the arc spot on the cathode evaporation surface. It is possible to provide a stable magnetic field that forms magnetic lines of force that can be run while suppressing the above.

Thus, according to the first arc evaporation source,
(A) It is possible to suppress arc extinguishing from the cathode evaporation surface of the arc spot and suppress arc extinguishing due to the popping out, and when applied to a vacuum deposition apparatus, it is possible to form a film with high productivity by suppressing arc extinguishing due to the jumping out. It is possible to suppress deterioration of film quality due to arc extinction and arc resumption.
(B) The generation of droplets can be suppressed by suppressing the wraparound of the arc spot to the cathode side surface and the local stagnation of the arc spot on the cathode evaporation surface, and the generation of droplets can be suppressed when applied to a vacuum deposition apparatus. Thus, deterioration of film quality due to droplets can be suppressed.
(C) Since it is possible to suppress the sneaking of the arc spot to the side of the cathode and the local stagnation of the arc spot on the cathode evaporation surface, the cathode material can be effectively used as much as desired, and the film formation cost can be reduced as much as possible. .

(2) Second arc evaporation source In the first arc evaporation source, an arc evaporation source provided with a magnetic strengthening member that increases the magnetic flux density at the center of the cathode facing the back surface of the cathode.

As described above, the moving speed of the arc spot is proportional to the component parallel to the evaporation surface of the magnetic flux density in the arc spot.
According to the second arc evaporation source, by providing the magnetic force strengthening member, the moving speed of the arc spot in the central part of the cathode evaporation surface and the vicinity thereof is increased, whereby the arc in the central part of the cathode evaporation surface and in the vicinity thereof. The stagnation of the spot can be further reliably suppressed, and the generation of droplets at the central portion of the evaporation surface and in the vicinity thereof can be further reliably suppressed.

Although not limited thereto, it is preferable that the magnetic force strengthening member increase the magnetic flux density at the central portion of the cathode to be equal to or higher than the magnetic flux density at the outer peripheral portion of the cathode.
Such a magnetic strengthening member may be disposed in a vacuum region that generates arc discharge or may be disposed in the atmosphere. In any case, it is desirable to cool by water cooling or air cooling.

In any case, examples of such a magnetic force enhancing member include a permanent magnet, an electromagnet, and a magnetic material (preferably a ferromagnetic material).

When a magnet is employed as the magnetic force enhancing member, it faces the back surface of the cathode of the magnet as the magnetic force enhancing member in order to maintain as much as possible the shape of the magnetic field provided by the annular magnet that suppresses the jumping out and stagnation of the arc spot. It can be said that the magnetic pole on the side is preferably a magnetic pole having a polarity opposite to that of the first magnetic pole of the annular magnet. *

(3) Third arc evaporation source In the arc evaporation source according to (1) or (2) above, an arc evaporation source in which the peripheral edge portion of the evaporation surface of the cathode is covered with a nonmagnetic refractory metal via an insulating portion .

Thus, when the edge of the evaporation surface of the cathode is covered with a refractory metal, which is a non-magnetic material, through an insulating portion, when the arc spot is going to move to the side surface following the cathode evaporation surface, the refractory metal The discharge path is blocked, and the discharge is less likely to be sustained than the inner region from the peripheral portion of the cathode evaporation surface, and the arc spot is likely to return to the inner side where the discharge is more stable. If the arc spot disappears because the discharge on the side surface does not continue, it can be lit again at the center of the evaporation surface. In this way, it is possible to more reliably suppress the wraparound of the arc spot to the side surface following the cathode evaporation surface.

[2] Vacuum deposition apparatus An arc evaporation source that evaporates the cathode material by vacuum arc discharge between the cathode and the anode and generates a plasma containing the ionized cathode material, and an ionized cathode material generated by the arc evaporation source A vacuum vapor deposition apparatus that forms a film on an article by flying to an article to be deposited, the vacuum vapor deposition apparatus adopting the first, second, or third type arc evaporation source as an arc evaporation source.

According to this vacuum evaporation apparatus, since any one of the arc evaporation sources of the above embodiment is adopted as the arc evaporation source, arc extinction and droplet generation in the arc evaporation source can be suppressed, and the cathode material in the arc evaporation source Thus, it is possible to form a high-quality film with good productivity and low cost.

Hereinafter, some examples of an arc evaporation source and a vacuum deposition apparatus will be described with reference to the drawings.
FIG. 1 is a view schematically showing an example of a vacuum vapor deposition apparatus according to the present invention.
The vacuum deposition apparatus 101 shown in FIG.
Vacuum container 1 for film formation,
An arc evaporation source 2 provided on the outer wall 11 of the container 1,
It includes a holder 3 for a film formation target article W arranged at a position facing the evaporation source 2 in the container 1 and an exhaust device EX for setting the inside of the vacuum container 1 to a reduced pressure atmosphere for forming a desired film.

The holder 3 is rotatably supported by the support portion 4 and can be rotated by the rotation drive portion 5. A bias voltage can be applied from the bias power source 6 through the holder 3 to the film formation target article W supported by the holder 3 so that a film can be smoothly formed by attracting an ionized cathode material described later. The article holder 3 may be provided with a heater for heating the article in forming the film.

The exhaust device EX may be any device that can exhaust and decompress the inside of the container 1. For example, a device including an exhaust pump such as a turbo molecular pump, a diffusion pump, or a claion pump can be used.

The vacuum vessel 1 is provided with a gas introduction part 7 for introducing a predetermined gas as required. This gas introduction part 7 is used as a part for introducing nitrogen gas into the container 1 when, for example, the evaporation source cathode material is chromium and a chromium nitride film is formed. It can be used as a gas introduction part for performing pretreatment such as cleaning pretreatment by electric discharge or the like.

The arc evaporation source 2 includes a cathode 20, a trigger electrode 25, a power source 24 for arc discharge, and the like. The cathode 20 is supported by a conductive cathode holder 21, is located in the container 1, and is directed toward the article holder 3.

In the illustrated example, the cathode holder 21 is applied from the outside to the outer wall 11 of the container 1 via the electrical insulating member 22 and is attached to the outer wall 11 so as to be pressed toward the outer wall 11 by the holding member 23. A space 211 is formed in a portion of the cathode holder 21 facing the back surface of the cathode 20. If desired, cooling water can be passed through a water circulation device (not shown) if desired.

Although not limited thereto, the cathode 20 has a short cylindrical shape here, and is formed of a material selected according to a film to be formed.
Here, the grounded container 1 serves as the anode for the cathode. As for the anode, for example, an anode surrounding the end portion of the cathode 20 may be separately provided.

The trigger electrode 25 faces the end surface (cathode evaporation surface) 20S of the cathode 20 facing the article holder 3, and can be brought into contact with and separated from the cathode evaporation surface 20S by a reciprocating drive device (not shown). In FIG. 1, the trigger electrode 25 is shown as if it penetrates the cathode 20, but instead of passing through the cathode 20, it is passed through a wall around the cathode so as to be able to reciprocate. (Not shown).

The arc discharge power supply 24 is capable of applying an arc discharge voltage between the cathode 20 and the anode, and triggers between the cathode 20 and the trigger electrode 25 to induce arc discharge between the cathode 20 and the anode. Wiring is connected to the cathode 20 or the like so that a working voltage can be applied. The trigger electrode 25 is grounded via a resistor 26 so that no arc current flows.

This arc evaporation source 2 is characterized by the following points.
That is, it is provided with a magnetic field forming magnet that is disposed in the atmosphere outside the outer wall 11 of the vacuum vessel 1 and attached to the outer wall. This magnetic field forming magnet is a magnet that generates magnetic field lines intersecting the evaporation surface for controlling the position of the arc spot by vacuum arc discharge on the cathode evaporation surface 20S.

The magnetic field forming magnet may be a permanent magnet, an electromagnet, a combination of them, or a combination of a plurality of magnets. Here, the permanent magnet M is an annular permanent magnet M. The magnet M will be further described later.

According to the vacuum evaporation apparatus 101 demonstrated above, the thin film containing the constituent material element of the cathode 20 can be formed on the film formation object W as follows.
First, the container door (not shown) is opened, the film formation target article W is mounted on the article holder 3, and the door is closed in an airtight manner. Next, the exhaust device EX is operated to exhaust from the container 1, and the inside of the container 1 is depressurized to the film forming pressure.

At the start of film formation, in the evaporation source 2, the trigger electrode 25 is brought into contact with the evaporation surface 20S of the cathode 20 and then continuously separated. As a result, a spark is generated between the electrode 25 and the cathode 20, which triggers a vacuum arc discharge between the anode (container 1) and the cathode 20. This arc discharge heats the cathode material, evaporates the cathode material, and forms plasma containing the ionized cathode material in front of the cathode 20.

In this example, during film formation, a bias voltage for attracting ions for film formation is applied from the power source 6 to the holder 3 in order to improve film adhesion. Further, the holder 3 is rotated by the drive unit 5 in order to form a uniform film on each article. When a heater (not shown) is provided in the holder 3, the article can be heated with the heater as necessary.

Thus, a film containing the constituent element of the cathode material is formed on the article W. However, in the arc evaporation source 2, the annular magnet M for forming the magnetic field brings the following advantages.

The annular magnet M is arranged so that the inner diameter is larger than the outer diameter of the cathode 20 and is fitted to the cathode 20 with the central axis aligned when viewed from the direction perpendicular to the evaporation surface 20S of the cathode 20. In addition, the first magnetic pole N is provided on one side (on the side facing the container 1) in the central axis direction, and the second magnetic pole S having a reverse polarity is provided on the opposite side.

FIG. 2 schematically shows the outline of the state of the magnetic field in the arc evaporation source 2.
As shown in FIG. 2, the magnetic field forming magnet M generates magnetic lines of force inclined at an acute angle θ1 to the central portion of the evaporation surface with respect to the evaporation surface 20S at the periphery of the evaporation surface 20S of the cathode 20 and the evaporation surface. In the central portion, a magnetic field is generated that generates magnetic lines of force that incline at an acute angle θ2 toward the evaporation surface periphery with respect to the evaporation surface 20S.

An arc spot due to arc discharge of the cathode evaporation surface 20S in the arc evaporation source 2 has a property that it easily moves in the direction in which the magnetic lines of force are inclined on the cathode evaporation surface 20S.
Therefore, the arc spot can be moved toward the center of the evaporation surface at the peripheral edge of the evaporation surface 20S by the above-described magnetic field lines as shown in FIG. Thus, it is possible to suppress the jumping out of the arc spot from the evaporation surface 20S and the wraparound to the cathode side surface ss following the evaporation surface 20S.

In the central part of the evaporation surface 20S, the magnetic field forming magnet M generates magnetic lines of force that incline at an acute angle θ2 to the peripheral part of the evaporation surface with respect to the evaporation surface 20S. The spot can be moved to the periphery of the evaporation surface. Thus, it is possible to suppress the stagnation of the arc spot locally at or near the center of the evaporation surface.
In this way, the arc spot can be run entirely on the evaporation surface 20S.

Further, since the magnet M is disposed in the atmosphere behind the back surface of the cathode 20, it is not affected by the heat from the arc spot on the cathode evaporation surface 20S (without causing thermal deterioration of the magnet M). It is possible to provide a stable magnetic field that forms magnetic field lines that can cause the arc spot to travel while suppressing jumping out and stagnation on the cathode evaporation surface 20S.

Thus, according to the arc evaporation source 2, by adopting the magnet M, it is possible to suppress the arc spot from jumping out from the cathode evaporation surface 20S and to suppress the arc extinguishing due to the jumping out. By suppressing arc extinguishing due to jumping out, a film can be formed with high productivity, and deterioration of the film quality due to arc extinguishing and arc resumption can be suppressed.

Further, it is possible to suppress the generation of droplets by suppressing the sneaking of the arc spot to the side surface ss of the cathode 20 and the local stagnation of the arc spot on the cathode evaporation surface 20S. Therefore, the vacuum deposition apparatus 101 suppresses the generation of droplets. By being able to do, the fall of the film quality by a droplet can be controlled.

Further, since the sneaking of the arc spot to the side surface ss of the cathode 20 and the local stagnation of the arc spot on the cathode evaporation surface 20S can be suppressed, the cathode material can be effectively used as desired, and the film formation cost can be reduced accordingly. be able to.

FIG. 3 shows another example 102 of the vacuum evaporation apparatus. This apparatus 102 is the same as the apparatus 101 except that the arc evaporation source 2 is replaced with an arc evaporation source 2 ′ in the vacuum vapor deposition apparatus 101 of FIG. 1. The same reference numerals as those in FIG. 1 are attached to the same parts and portions as those in the apparatus 101.

The arc evaporation source 2 ′ of the vacuum evaporation apparatus 102 is the same as the evaporation source 2 of the apparatus 101 except that the magnetic force enhancing member m is disposed in a space 211 facing the back surface of the cathode 20 of the cathode holder 21 with a gap with respect to the cathode 20. For example, it is the same as the evaporation source 2. The same parts and portions as those of the evaporation source 2 are denoted by the same reference numerals as those in FIGS. The apparatus 102 can also form a film on the article W on the same principle as the apparatus 101. Water can be passed through the space 211 from a water circulation device (not shown) to cool the magnetic strengthening member m. *

Examples of the magnetic force reinforcing member m include a permanent magnet, an electromagnet, and a magnetic body (preferably a ferromagnetic body), but an annular permanent magnet m is employed here.
The magnet m is arranged so that the central axis coincides with the magnetic field forming magnet M and the cathode 20, and has an S pole on the side facing the back surface of the cathode 20 and an N pole on the opposite side (magnet back side). Yes.
FIG. 4 schematically shows the outline of the state of the magnetic field in the arc evaporation source 2 ′.

The moving speed of the arc spot is proportional to the component parallel to the evaporation surface 20S of the magnetic flux density at the arc spot.
According to the arc evaporation source 2 ', by providing the magnetic force strengthening magnet m, as shown in FIG. 4, the magnetic force can be strengthened at the central portion of the cathode evaporation surface 20S or in the vicinity thereof, and the moving speed of the arc spot. Can speed up. As a result, the stagnation of the arc spot at the central portion of the cathode evaporation surface and the vicinity thereof can be further reliably suppressed, and the generation of droplets at the central portion of the evaporation surface and its vicinity can be further reliably suppressed.

Although not limited thereto, it is preferable that the magnetic force-enhanced magnet m is one that increases the magnetic flux density at the central portion of the cathode to be equal to or higher than the magnetic flux density at the outer peripheral portion of the cathode.
FIG. 6 shows the result of an experiment confirming that the magnetic force at the central portion of the cathode evaporation surface 20S and the vicinity thereof is reinforced by the use of the magnet m.

The dimensions of the cathode used in the experiment are as follows.
Cathode 20: The evaporation surface 20S is a flat circular surface having a diameter of 84 mm.
Magnet M: outer diameter 170 mm, inner diameter 110 mm, thickness 9 mm, coercive force 2000 oersted.
Magnet m: outer diameter 25 mm, inner diameter 10 mm, thickness 3 mm, coercive force 2000 oersted.

As can be seen from FIG. 6, in comparison with the case where only the magnet M is employed, the magnetic force can be strengthened at or near the center of the cathode evaporation surface 20S when both the magnet M and the magnet m are used together.

FIG. 5 shows still another example 103 of the vacuum evaporation apparatus. This apparatus 103 is the same as the vacuum vapor deposition apparatus 102 shown in FIG. 3, except that the peripheral corner portion of the evaporation surface 20S of the cathode 20 is covered with a refractory metal ring R, which is a non-magnetic material, through an insulating portion (here, a vacuum portion). It is a thing. The other points are the same as those of the apparatus 102. The same reference numerals as those in FIGS. 3 and 4 are assigned to the same parts and portions as those in the apparatus 102. Also in the apparatus 103, a film can be formed on the article W by the same principle as the apparatus 101 and the apparatus 102.

As the nonmagnetic refractory metal constituting the ring R, molybdenum, tungsten, austenitic stainless steel and the like can be exemplified, but here, a nonmagnetic stainless steel and molybdenum coupling member is employed. More specifically, a non-magnetic stainless steel ring that is externally fitted to the cathode evaporation surface 20S and that has a molybdenum ring screwed so that a part thereof covers the periphery of the evaporation surface 20S is attached to the inner surface of the chamber 1. Adopted.

Thus, by covering the peripheral edge portion of the evaporation surface of the cathode 20 with the nonmagnetic refractory metal ring R via the insulating portion, when the arc spot is going to move to the side surface following the cathode evaporation surface 20S, the refractory metal The discharge path is blocked by the ring R, and it becomes difficult for the discharge to be sustained as compared with the inner portion of the cathode evaporation surface 20S, and the arc spot is an inner region of the cathode evaporation surface where the discharge can be maintained more stably. It becomes easy to return to. If the arc spot disappears because the discharge on the cathode side surface ss does not continue, it may be lit again at the center of the evaporation surface. Thus, the arc spot can be more reliably prevented from entering the side surface ss following the cathode evaporation surface 20S, and the generation of droplets can be suppressed accordingly.

In any of the

vacuum evaporation apparatuses

101, 102, and 103 described above, arc extinction and droplet generation in the arc evaporation source can be suppressed, and the cathode material in the arc evaporation source can be effectively used. The film can be formed with good productivity and at low cost.
The vacuum vessel 1 may be provided with two or more arc evaporation sources.

The present invention can suppress generation of arc extinguishment and droplets and contribute to the formation of a high-quality film. By adopting an arc evaporation source for a vacuum deposition apparatus and the arc evaporation source, a high-quality film can be produced with good productivity. It can utilize for providing the vacuum evaporation system which can be formed in this.

Claims

An arc evaporation source for a vacuum vapor deposition apparatus for evaporating a cathode material by a vacuum arc discharge between a cathode and an anode and generating a plasma containing an ionized cathode material, by vacuum arc discharge at an evaporation surface of the cathode An annular magnet for forming a magnetic field that generates magnetic field lines intersecting the evaporation surface for controlling the position of the arc spot is included. The annular magnet has an inner diameter larger than the outer diameter of the cathode, and the evaporation of the cathode When viewed from the direction perpendicular to the surface, the cathode is disposed so as to be fitted with its central axis aligned with the cathode, and is disposed in the atmosphere behind the back surface opposite to the evaporation surface of the cathode, A first magnetic pole can be provided on one side in the central axis direction, and a second magnetic pole having a polarity opposite to the first magnetic pole can be provided on the opposite side. At the edge, a magnetic field that generates a magnetic field line that tilts at an acute angle to the central part of the evaporation surface with respect to the evaporation surface and at the central part of the evaporation surface generates a magnetic field line that tilts at an acute angle to the peripheral part of the evaporation surface. An arc evaporation source that is a magnet to form.
The arc evaporation source according to claim 1, further comprising a magnetic strengthening member that faces the back surface of the cathode and increases a magnetic flux density at a central portion of the cathode.
3. The arc evaporation source according to claim 2, wherein the magnetic force reinforcing member has a magnetic pole on the side facing the back surface of the cathode having a polarity opposite to the first magnetic pole of the annular magnet.
2. The arc evaporation source according to claim 1, wherein a peripheral edge portion of the evaporation surface of the cathode is covered with a nonmagnetic refractory metal through an insulating portion.
3. An arc evaporation source according to claim 2, wherein a peripheral corner portion of the evaporation surface of the cathode is covered with a nonmagnetic refractory metal via an insulating portion.
The arc evaporation source according to claim 1, wherein the annular magnet is a permanent magnet.
The arc evaporation source according to claim 2, wherein the magnetic force reinforcing member is a permanent magnet.
It includes an arc evaporation source that evaporates the cathode material by vacuum arc discharge between the cathode and the anode and generates a plasma containing the ionized cathode material, and the ionized cathode material generated by the arc evaporation source flies to the article to be deposited. A vacuum deposition apparatus for forming a film on the article, the vacuum deposition apparatus comprising the arc evaporation source according to any one of claims 1 to 7 as an arc evaporation source .