WO2011019209A3 - Etchant composition for forming metal interconnects - Google Patents

Etchant composition for forming metal interconnects Download PDF

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Publication number
WO2011019209A3
WO2011019209A3 PCT/KR2010/005277 KR2010005277W WO2011019209A3 WO 2011019209 A3 WO2011019209 A3 WO 2011019209A3 KR 2010005277 W KR2010005277 W KR 2010005277W WO 2011019209 A3 WO2011019209 A3 WO 2011019209A3
Authority
WO
WIPO (PCT)
Prior art keywords
film
etchant composition
metal film
indium
titanium
Prior art date
Application number
PCT/KR2010/005277
Other languages
French (fr)
Korean (ko)
Other versions
WO2011019209A2 (en
Inventor
양승재
이석준
장상훈
이준우
임민기
권오병
박영철
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090074367A external-priority patent/KR20110016724A/en
Priority claimed from KR1020090083461A external-priority patent/KR20110025408A/en
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to CN2010800356463A priority Critical patent/CN102471687A/en
Publication of WO2011019209A2 publication Critical patent/WO2011019209A2/en
Publication of WO2011019209A3 publication Critical patent/WO2011019209A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

The present invention provides an etchant composition for a metal film comprising at least one film selected from an indium-based transparent conductive film, an aluminum-based metal film and a titanium-based metal film, used for the interconnect of a pixel electrode, a gate electrode, a source electrode and a drain electrode. The etchant composition is excellent in etching characteristics to an indium-based transparent conductive film, an aluminum-based metal film and a titanium-based metal film, respectively, and particularly to an Al-La-based alloy film. In addition, the etchant composition can effectively etch a tri-layered film comprising an indium-based transparent conductive film, an Al-La-based alloy film and a titanium-based metal film at a time.
PCT/KR2010/005277 2009-08-12 2010-08-11 Etchant composition for forming metal interconnects WO2011019209A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010800356463A CN102471687A (en) 2009-08-12 2010-08-11 Etchant composition for forming metal interconnects

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020090074367A KR20110016724A (en) 2009-08-12 2009-08-12 Etching solution composition for formation of metal line
KR10-2009-0074367 2009-08-12
KR1020090083461A KR20110025408A (en) 2009-09-04 2009-09-04 Etching solution composition for formation of metal line
KR10-2009-0083461 2009-09-04

Publications (2)

Publication Number Publication Date
WO2011019209A2 WO2011019209A2 (en) 2011-02-17
WO2011019209A3 true WO2011019209A3 (en) 2011-06-03

Family

ID=43586648

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005277 WO2011019209A2 (en) 2009-08-12 2010-08-11 Etchant composition for forming metal interconnects

Country Status (2)

Country Link
CN (1) CN102471687A (en)
WO (1) WO2011019209A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102464392A (en) * 2011-10-20 2012-05-23 常州亚环环保科技有限公司 Composite dechlorination agent for removing high-concentration chlorine-containing wastewater and application method thereof
KR20140063284A (en) * 2012-11-16 2014-05-27 동우 화인켐 주식회사 Etchant composition for ag thin layer and method for fabricating metal pattern using the same
CN103087718B (en) * 2013-01-16 2014-12-31 四川大学 Etching solution for performing wet etching on lanthanum nickelate film and ferroelectric film/lanthanum nickelate composite film and preparation method thereof
KR20180049844A (en) * 2016-11-03 2018-05-14 삼성디스플레이 주식회사 Etching composition and manufacturing method of wire patter and organic light emitting display device using the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050056153A (en) * 2003-12-09 2005-06-14 간토 가가꾸 가부시키가이샤 Photoresist residue removing liquid composition and process of the preparation of semiconductor circuit elements using the composition
KR20060050581A (en) * 2004-08-25 2006-05-19 삼성전자주식회사 Etchant composition for indium oxide layer and etching method using the same
KR20060094706A (en) * 2005-02-25 2006-08-30 동우 화인켐 주식회사 Eching composition for making metal electrodes of tft in flat panel display
KR20080018010A (en) * 2006-08-23 2008-02-27 간또 가가꾸 가부시끼가이샤 Etchant compositions for metal laminated films having titanium and aluminum layer
KR20080051249A (en) * 2006-12-05 2008-06-11 동우 화인켐 주식회사 Etchant composition for multi layers thin film comprising titanium or titanium alloy layer, and aluminum or aluminum alloy layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050056153A (en) * 2003-12-09 2005-06-14 간토 가가꾸 가부시키가이샤 Photoresist residue removing liquid composition and process of the preparation of semiconductor circuit elements using the composition
KR20060050581A (en) * 2004-08-25 2006-05-19 삼성전자주식회사 Etchant composition for indium oxide layer and etching method using the same
KR20060094706A (en) * 2005-02-25 2006-08-30 동우 화인켐 주식회사 Eching composition for making metal electrodes of tft in flat panel display
KR20080018010A (en) * 2006-08-23 2008-02-27 간또 가가꾸 가부시끼가이샤 Etchant compositions for metal laminated films having titanium and aluminum layer
KR20080051249A (en) * 2006-12-05 2008-06-11 동우 화인켐 주식회사 Etchant composition for multi layers thin film comprising titanium or titanium alloy layer, and aluminum or aluminum alloy layer

Also Published As

Publication number Publication date
CN102471687A (en) 2012-05-23
WO2011019209A2 (en) 2011-02-17

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