WO2009038063A1 - Etching solution - Google Patents

Etching solution Download PDF

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Publication number
WO2009038063A1
WO2009038063A1 PCT/JP2008/066707 JP2008066707W WO2009038063A1 WO 2009038063 A1 WO2009038063 A1 WO 2009038063A1 JP 2008066707 W JP2008066707 W JP 2008066707W WO 2009038063 A1 WO2009038063 A1 WO 2009038063A1
Authority
WO
WIPO (PCT)
Prior art keywords
etching
alloy
metallic film
etching solution
laminated metallic
Prior art date
Application number
PCT/JP2008/066707
Other languages
French (fr)
Japanese (ja)
Inventor
Yoshitaka Nishijima
Hidekuni Yasue
Takafumi Yamabe
Yoshihiro Mukai
Original Assignee
Nagase Chemtex Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nagase Chemtex Corporation filed Critical Nagase Chemtex Corporation
Publication of WO2009038063A1 publication Critical patent/WO2009038063A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

The invention provides an etching solution which makes it possible to etch at once not only a Cu/Mo laminated metallic film but also a Cu alloy/Mo alloy laminated metallic film difficult of conventional etching and which attains, without side etching, a cross section of etching with a desired taper angle which was difficulty attainable in the prior art. An etching solution which comprises as the essential components (a) at least one member selected from the group consisting of phosphoric acid salts whose aqueous solutions are neutral or acidic and carboxylic acid salts whose aqueous solutions are neutral or acidic, (b) hydrogen peroxide, and (c) water and which is useful in etching at once a multilayer laminated metallic film composed of one or more layers of copper or copper alloy and one or more layers of molybdenum or molybdenum alloy.
PCT/JP2008/066707 2007-09-19 2008-09-17 Etching solution WO2009038063A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007242831A JP2009076601A (en) 2007-09-19 2007-09-19 Etching solution
JP2007-242831 2007-09-19

Publications (1)

Publication Number Publication Date
WO2009038063A1 true WO2009038063A1 (en) 2009-03-26

Family

ID=40467875

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066707 WO2009038063A1 (en) 2007-09-19 2008-09-17 Etching solution

Country Status (3)

Country Link
JP (1) JP2009076601A (en)
TW (1) TW200918687A (en)
WO (1) WO2009038063A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011158634A1 (en) * 2010-06-18 2011-12-22 三菱瓦斯化学株式会社 Etching liquid for film of multilayer structure containing copper layer and molybdenum layer
JP2013087353A (en) * 2011-10-21 2013-05-13 Mitsubishi Gas Chemical Co Inc Etching solution for multilayer film containing copper and molybdenum
CN109023370A (en) * 2018-08-30 2018-12-18 深圳市华星光电技术有限公司 Etching solution and engraving method for copper-molybdenum metallic diaphragm
CN109234736A (en) * 2018-08-31 2019-01-18 深圳市华星光电技术有限公司 A kind of high life copper-molybdenum etching solution and engraving method
WO2019090855A1 (en) * 2017-11-10 2019-05-16 深圳市华星光电技术有限公司 Copper-molybdenum titanium alloy etching solution
CN112867812A (en) * 2018-10-17 2021-05-28 株式会社Adeka Etching liquid composition and etching method

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5604056B2 (en) * 2009-05-15 2014-10-08 関東化学株式会社 Etching solution for copper-containing laminated film
JP5051323B2 (en) * 2010-02-15 2012-10-17 三菱瓦斯化学株式会社 Etching solution for multilayer thin film containing copper layer and molybdenum layer
KR101608873B1 (en) 2010-03-18 2016-04-05 삼성디스플레이 주식회사 Etchant for metal wire and method for manufacturing metal wire using the same
KR101170382B1 (en) 2010-04-09 2012-08-01 솔브레인 주식회사 Etchant for thin film transistor-liquid crystal display
KR101270560B1 (en) * 2010-11-12 2013-06-03 오씨아이 주식회사 Composition for etching metal layer
KR101845083B1 (en) * 2010-12-10 2018-04-04 동우 화인켐 주식회사 Manufacturing method of an array substrate for liquid crystal display
KR101845084B1 (en) * 2010-12-10 2018-04-04 동우 화인켐 주식회사 Manufacturing method of an array substrate for liquid crystal display
KR20120066950A (en) 2010-12-15 2012-06-25 삼성전자주식회사 Echtant, display device and method for manufacturing display device using the same
US9365770B2 (en) 2011-07-26 2016-06-14 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper/molybdenum-based multilayer thin film
JP2013060634A (en) * 2011-09-14 2013-04-04 Tosoh Corp Etching solution
JP5799791B2 (en) * 2011-12-16 2015-10-28 三菱瓦斯化学株式会社 Etching solution for multilayer film containing copper and molybdenum
WO2014175071A1 (en) * 2013-04-23 2014-10-30 三菱瓦斯化学株式会社 Liquid composition used in etching multilayer film containing copper and molybdenum, manufacturing method of substrate using said liquid composition, and substrate manufactured by said manufacturing method
TWI510676B (en) * 2013-07-10 2015-12-01 Daxin Materials Corp Metal etchant compositions for etching copper and molybdenum and their use for etching Metal etching method for copper and molybdenum
US9276128B2 (en) * 2013-10-22 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and etchant used for the same
KR101670421B1 (en) * 2015-02-13 2016-10-28 한국항공대학교산학협력단 Method for etching a multi-layered metal film and etchant
CN105908188A (en) * 2016-05-23 2016-08-31 杭州格林达化学有限公司 Hydrogen peroxide system etching liquid for TFT copper-molybdenum lamination
CN113026018B (en) * 2021-03-01 2022-11-22 四川江化微电子材料有限公司 Etching solution composition of copper-molybdenum alloy and etching method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63305518A (en) * 1987-05-18 1988-12-13 エヌ・ベー・フィリップス・フルーイランペンファブリケン Manufacture of semiconductor device
JP2001262374A (en) * 2000-03-09 2001-09-26 Lg Philips Lcd Co Ltd Etching agent for copper, method for manufacturing substrate for electronic aperture using the same and electronic apparatus
JP2004193620A (en) * 2002-12-12 2004-07-08 Lg Phillips Lcd Co Ltd Etching solution for removing molybdenum residue from copper molybdenum film, and etching method therefore

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63305518A (en) * 1987-05-18 1988-12-13 エヌ・ベー・フィリップス・フルーイランペンファブリケン Manufacture of semiconductor device
JP2001262374A (en) * 2000-03-09 2001-09-26 Lg Philips Lcd Co Ltd Etching agent for copper, method for manufacturing substrate for electronic aperture using the same and electronic apparatus
JP2004193620A (en) * 2002-12-12 2004-07-08 Lg Phillips Lcd Co Ltd Etching solution for removing molybdenum residue from copper molybdenum film, and etching method therefore

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011158634A1 (en) * 2010-06-18 2011-12-22 三菱瓦斯化学株式会社 Etching liquid for film of multilayer structure containing copper layer and molybdenum layer
CN102985596A (en) * 2010-06-18 2013-03-20 三菱瓦斯化学株式会社 Etching liquid for film of multilayer structure containing copper layer and molybdenum layer
JP5682624B2 (en) * 2010-06-18 2015-03-11 三菱瓦斯化学株式会社 Etching solution for multilayer structure film including copper layer and molybdenum layer
US9580818B2 (en) 2010-06-18 2017-02-28 Mitsubishi Gas Chemical Company, Inc. Etching liquid for film of multilayer structure containing copper layer and molybdenum layer
JP2013087353A (en) * 2011-10-21 2013-05-13 Mitsubishi Gas Chemical Co Inc Etching solution for multilayer film containing copper and molybdenum
WO2019090855A1 (en) * 2017-11-10 2019-05-16 深圳市华星光电技术有限公司 Copper-molybdenum titanium alloy etching solution
CN109023370A (en) * 2018-08-30 2018-12-18 深圳市华星光电技术有限公司 Etching solution and engraving method for copper-molybdenum metallic diaphragm
CN109234736A (en) * 2018-08-31 2019-01-18 深圳市华星光电技术有限公司 A kind of high life copper-molybdenum etching solution and engraving method
CN109234736B (en) * 2018-08-31 2020-08-11 深圳市华星光电技术有限公司 Long-life copper-molybdenum etching solution and etching method
CN112867812A (en) * 2018-10-17 2021-05-28 株式会社Adeka Etching liquid composition and etching method

Also Published As

Publication number Publication date
TW200918687A (en) 2009-05-01
JP2009076601A (en) 2009-04-09

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