WO2011082857A3 - Production of a component - Google Patents

Production of a component Download PDF

Info

Publication number
WO2011082857A3
WO2011082857A3 PCT/EP2010/066447 EP2010066447W WO2011082857A3 WO 2011082857 A3 WO2011082857 A3 WO 2011082857A3 EP 2010066447 W EP2010066447 W EP 2010066447W WO 2011082857 A3 WO2011082857 A3 WO 2011082857A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
component
layer
production
producing
Prior art date
Application number
PCT/EP2010/066447
Other languages
German (de)
French (fr)
Other versions
WO2011082857A2 (en
Inventor
Georg Bischopink
Christina Leinenbach
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2011082857A2 publication Critical patent/WO2011082857A2/en
Publication of WO2011082857A3 publication Critical patent/WO2011082857A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Weting (AREA)

Abstract

The invention relates to a method for producing a component. The method comprises providing a first substrate (110) and forming a layer arrangement (120) on the first substrate (110), wherein the layer arrangement (120) has at least one component layer (123). The method further comprises forming circuit structures in the region of the component layer (123) and providing a second substrate (150, 151). The invention further relates to producing a bond between the second substrate (150, 151) and the component layer (123) and carrying out an etching process for separating at least one part of the first substrate (110).
PCT/EP2010/066447 2009-12-15 2010-10-29 Production of a component WO2011082857A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009054659.6 2009-12-15
DE200910054659 DE102009054659A1 (en) 2009-12-15 2009-12-15 Production of a component

Publications (2)

Publication Number Publication Date
WO2011082857A2 WO2011082857A2 (en) 2011-07-14
WO2011082857A3 true WO2011082857A3 (en) 2011-11-03

Family

ID=43636455

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/066447 WO2011082857A2 (en) 2009-12-15 2010-10-29 Production of a component

Country Status (3)

Country Link
DE (1) DE102009054659A1 (en)
TW (1) TW201126649A (en)
WO (1) WO2011082857A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3007576B1 (en) * 2013-06-19 2015-07-10 Soitec Silicon On Insulator METHOD OF TRANSFERRING A LAYER OF CIRCUITS.
FR3108777A1 (en) * 2020-03-24 2021-10-01 Commissariat à l'Energie Atomique et aux Energies Alternatives method of manufacturing a semiconductor structure by transferring thumbnails onto a support substrate
DE102021206965A1 (en) 2021-07-02 2023-01-05 Robert Bosch Gesellschaft mit beschränkter Haftung Method of manufacturing a silicon carbide semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020096717A1 (en) * 2001-01-25 2002-07-25 International Business Machines Corporation Transferable device-containing layer for silicon-on-insulator applications
DE102004023405A1 (en) * 2004-05-12 2005-12-15 Infineon Technologies Ag Dicing ultra-thin wafer in to multiple integrated circuits, by fixing carrier wafer to front of product wafer, forming separating trenches between integrated circuits
US20060199382A1 (en) * 2005-03-01 2006-09-07 Semiconductor Energy Laboratory Co., Ltd. Manufacturing Method of Semiconductor Device
DE102005047081A1 (en) * 2005-09-30 2007-04-05 Robert Bosch Gmbh Process for plasma-free etching of silicon with etching gas useful in production of deep structures such as through holes or troughs where silicon has one or more regions to be etched as layer on substrate or on substrate itself
US20080050858A1 (en) * 2006-08-22 2008-02-28 Sony Corporation Method for producing semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020096717A1 (en) * 2001-01-25 2002-07-25 International Business Machines Corporation Transferable device-containing layer for silicon-on-insulator applications
DE102004023405A1 (en) * 2004-05-12 2005-12-15 Infineon Technologies Ag Dicing ultra-thin wafer in to multiple integrated circuits, by fixing carrier wafer to front of product wafer, forming separating trenches between integrated circuits
US20060199382A1 (en) * 2005-03-01 2006-09-07 Semiconductor Energy Laboratory Co., Ltd. Manufacturing Method of Semiconductor Device
DE102005047081A1 (en) * 2005-09-30 2007-04-05 Robert Bosch Gmbh Process for plasma-free etching of silicon with etching gas useful in production of deep structures such as through holes or troughs where silicon has one or more regions to be etched as layer on substrate or on substrate itself
US20080050858A1 (en) * 2006-08-22 2008-02-28 Sony Corporation Method for producing semiconductor device

Also Published As

Publication number Publication date
WO2011082857A2 (en) 2011-07-14
DE102009054659A1 (en) 2011-06-16
TW201126649A (en) 2011-08-01

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