WO2011013746A1 - Appareillage de dépôt chimique - Google Patents

Appareillage de dépôt chimique Download PDF

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Publication number
WO2011013746A1
WO2011013746A1 PCT/JP2010/062784 JP2010062784W WO2011013746A1 WO 2011013746 A1 WO2011013746 A1 WO 2011013746A1 JP 2010062784 W JP2010062784 W JP 2010062784W WO 2011013746 A1 WO2011013746 A1 WO 2011013746A1
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WO
WIPO (PCT)
Prior art keywords
plate
substrate
film
film forming
intermediate member
Prior art date
Application number
PCT/JP2010/062784
Other languages
English (en)
Japanese (ja)
Inventor
康男 清水
勝彦 森
浩一 松本
智彦 岡山
和 森岡
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to JP2011524827A priority Critical patent/JPWO2011013746A1/ja
Priority to CN201080026689.5A priority patent/CN102473609B/zh
Publication of WO2011013746A1 publication Critical patent/WO2011013746A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

Definitions

  • the present invention relates to a film forming apparatus used for manufacturing a thin film solar cell, for example.
  • This application claims priority based on Japanese Patent Application No. 2009-179212 filed on Jul. 31, 2009, the contents of which are incorporated herein by reference.
  • a plasma CVD apparatus As an apparatus for forming a thin film Si layer (semiconductor layer) of this thin film solar cell, a plasma CVD apparatus is often used.
  • a plasma CVD apparatus a single-wafer PE-CVD (plasma CVD) apparatus, an inline PE-CVD apparatus, a batch PE-CVD apparatus, and the like are known.
  • the film thickness required for the ⁇ c-Si layer of the tandem solar cell is approximately 5 times the film thickness of the amorphous Si layer (approximately 1.5 ⁇ m). ) Must be secured. Further, in the process of forming the ⁇ c-Si layer, it is necessary to form a high-quality microcrystal film uniformly, and there is a limit to increasing the film formation rate. For this reason, it is required to improve productivity by increasing the number of batches. That is, there is a demand for an apparatus that realizes a high deposition rate at a low film formation rate.
  • a so-called vertical CVD apparatus for forming a film is known.
  • this vertical CVD apparatus there is known an apparatus having a carrier in which a pair of support walls (holders) for supporting a substrate extend in the vertical direction.
  • the pair of support walls are disposed substantially parallel to each other.
  • the carrier moves along a direction parallel to the floor surface on which the apparatus is installed in a state where the substrate is supported on each support wall, and transports the substrate to the film formation chamber.
  • a heater for heating each substrate is provided in the film formation chamber so as to correspond to the position between the pair of substrates.
  • high-frequency electrodes cathodes
  • plasma of a film forming gas supplied to the film formation chamber is generated by supplying power to the high-frequency electrodes.
  • the temperature in the film forming chamber increases the number of batch processes due to heat generated by the heater or heat generated by the discharge by the high frequency electrode (the film forming process is performed in the film forming chamber). The number of times it is performed increases). Even if the output of the heater is suppressed as the temperature in the film formation chamber increases, the temperature of the substrate increases due to radiant heat or the like, and becomes higher than a desired temperature. For this reason, the quality of the film
  • the present invention has been made to solve the above-described problems, and can maintain the temperature of the substrate constant, and can stabilize the quality of the film formed on the substrate even when the number of batch processing increases.
  • a film forming apparatus capable of
  • a film formation apparatus of one embodiment of the present invention includes a cathode unit and an anode that is spaced from and opposed to the cathode unit, and is disposed between the cathode unit and the anode. A desired film is formed on the formed substrate.
  • the cathode unit includes an electrode plate to which a voltage is applied, a temperature adjusting fluid flow path (circulation path) provided in the electrode plate through which the temperature adjusting fluid circulates, and the substrate in contact with the electrode plate.
  • a shower plate having a plurality of holes for supplying a process gas toward the deposition surface; a heat exchange plate provided between the electrode plate and the shower plate and in contact with the electrode plate and the shower plate; The gas flow path (introducing the process gas into the heat exchange plate and guiding the process gas introduced into the heat exchange plate to the plurality of holes of the shower plate and provided in the heat exchange plate) Distribution channel).
  • the temperature of the electrode plate constant by circulating the temperature adjusting fluid through the temperature adjusting fluid channel provided in the electrode plate.
  • the heat of the electrode plate is transferred to the shower plate via the heat exchange plate.
  • the temperature of the shower plate can be kept constant.
  • the heat exchange plate is provided with a gas flow path.
  • the heat exchange plate has a first concave portion formed by concave and convex processing, a first contact surface that contacts the electrode plate, and a first concave portion formed by concave and convex processing. And a second contact surface that contacts the electrode shower plate, and the positions of the first recess and the second recess correspond to the positions of the plurality of holes of the shower plate. preferable.
  • a space for flowing the process gas can be reliably formed (secured) around the hole of the shower plate.
  • the temperature adjusting fluid flow path is configured so that the temperature of the electrode plate gradually decreases in a direction from the outer peripheral portion of the electrode plate toward the central portion of the electrode plate. It is preferable that they are arranged. That is, the shape of the temperature adjusting fluid flow path or the pattern of the circulation path is designed so that the temperature of the electrode plate gradually decreases in the direction from the outer periphery of the electrode plate toward the center of the electrode plate. If temperature unevenness (temperature variation) occurs in the substrate, the substrate may be distorted.
  • the temperature of the center portion of the substrate is decreased by gradually decreasing the temperature of the electrode plate in the direction from the outer peripheral portion of the electrode plate toward the center portion of the electrode plate. Can be lowered from the outer peripheral portion. As a result, it is possible to prevent damage to the substrate due to thermal distortion.
  • the heat exchange plate includes a pair of first plate pieces and second plate pieces, and the first plate pieces and the second plate pieces are formed by the cathode unit. It is preferable that the layers are overlapped along the direction facing the anode.
  • the gas flow path can be easily formed inside the heat exchange plate. Specifically, a first groove is formed on the first surface of the first plate piece that contacts the second plate piece, and a second groove is formed on the second surface of the second plate piece that contacts the first plate piece. Yes. In the mating surface between the first plate piece and the second plate piece, the first surface and the second surface are in contact with each other.
  • the gas flow path can be formed in the heat exchange plate. For this reason, compared with the case where the gas flow path is formed on one plate, the processing step for forming the gas flow path can be simplified, and the processing cost can be reduced.
  • the process gas introduced into the heat exchange plate flows toward a position close to the electrode plate and is close to the electrode plate. It is preferable that the process gas that has flowed in the direction flows from the electrode plate toward the shower plate. That is, in the flow path of the gas flow path, the process gas introduced into the heat exchange plate is once discharged into the space on the electrode plate side. Thereafter, the process gas is introduced from the space on the electrode plate side to the shower plate side.
  • the process gas introduced into the heat exchange plate is dispersed over the entire space formed between the electrode plate and the shower plate, and then provided on the shower plate. Process gas can be directed toward the plurality of holes. For this reason, the process gas can be ejected uniformly from the entire shower plate, and a film can be uniformly formed on the entire substrate.
  • the present invention it is possible to keep the temperature of the electrode plate constant by circulating the temperature adjusting fluid through the temperature adjusting fluid channel provided in the electrode plate.
  • the heat of the electrode plate is transferred to the shower plate via the heat exchange plate.
  • the temperature of the shower plate can be kept constant.
  • an increase in the temperature of the substrate can be suppressed. For this reason, even if the number of batch processes increases, that is, the number of times the film forming process is performed in the film forming chamber, the quality of the film formed on the substrate can be stabilized.
  • FIG. 3 is a perspective view schematically showing a configuration of a film forming chamber in an embodiment of the present invention, which is a perspective view different from FIG. 2. It is a side view which shows the film-forming chamber in embodiment of this invention. It is a perspective view which shows roughly the structure of the electrode unit in embodiment of this invention.
  • FIG. 6 is a perspective view schematically showing a configuration of an electrode unit in the embodiment of the present invention, which is a perspective view different from FIG. 5.
  • FIG. 1 is a diagram schematically showing a configuration of a film forming apparatus.
  • the film formation apparatus 10 includes a film formation chamber 11, a preparation / removal chamber 13, a substrate removal chamber 15, a substrate removal robot 17, and a substrate storage cassette 19.
  • a microcrystal silicon film can be formed on a plurality of substrates W simultaneously.
  • the preparation / removal chamber 13 can simultaneously accommodate a substrate W (hereinafter referred to as a pre-treatment substrate) carried into the film formation chamber 11 and a substrate W (hereinafter referred to as a post-treatment substrate) carried out from the film formation chamber 11. It is.
  • pre-treatment substrate means a substrate before film formation processing (substrate before film formation treatment), and “post-treatment substrate” means after film formation processing has been performed. This means a substrate (substrate after film formation).
  • substrate removal chamber 15 the unprocessed substrate W is attached to the carrier 21 (see FIG. 11) or the processed substrate W is removed from the carrier 21.
  • the substrate removal robot 17 attaches or removes the substrate W to / from the carrier 21.
  • the substrate storage cassette 19 is used when transporting the substrate W to a different processing chamber different from the film forming apparatus 10 and stores a plurality of substrates W.
  • the substrate film forming lines 16 each including a film forming chamber 11, a loading / unloading chamber 13, and a substrate desorbing chamber 15 are provided.
  • the substrate removal robot 17 can move on the rail 18 arranged (laid) on the floor surface, and the substrate removal robot 17 performs the process of transferring the substrate W to all the substrate deposition lines 16.
  • the substrate film forming module 14 is configured by integrating the film forming chamber 11 and the loading / unloading chamber 13 and has a size that can be loaded on a transport truck.
  • FIG. 2 is a perspective view seen from a certain position
  • FIG. 3 is a perspective view seen from a position different from the position seen in FIG.
  • FIG. 4 is a side view of the film forming chamber 11.
  • the film forming chamber 11 is formed in a box shape.
  • a carrier through which the carrier 21 on which the substrate W is mounted passes through the first side surface 23 of the film formation chamber 11 connected to the preparation / removal chamber 13 (the side surface of the film formation chamber 11 shown in front of the paper surface in FIG. 2).
  • Three carry-in / out entrances 24 are formed.
  • the carrier carry-in / out port 24 is provided with a shutter 25 that opens and closes the carrier carry-in / out port 24. When the shutter 25 is closed, the carrier carry-in / out port 24 is closed so as to ensure the airtightness of the film forming chamber 11. Further, an exhaust pipe 29 used for decompressing the film forming chamber 11 so as to be in a vacuum atmosphere is connected to the lower side of the side surface of the film forming chamber 11. A vacuum pump 30 is provided in the exhaust pipe 29. (See FIG. 4).
  • FIG. 3 in order to form a film on the substrate W on the second side surface 27 (the side surface of the film forming chamber 11 shown in front of the paper surface in FIG. 3) located opposite to the first side surface 23.
  • Three electrode units 31 to be used are attached. These electrode units 31 are detachable from the film forming chamber 11.
  • a first end (one end) of the hot water pipe 28 is connected to each of the electrode units 31.
  • a hot water circulator 32 is connected to the second end (other end) of each hot water pipe 28.
  • the hot water circulator 32 supplies hot water to each of the electrode units 31 through the hot water pipe 28.
  • the hot water (cooling water) of the present embodiment corresponds to the “temperature adjusting fluid” of the present invention.
  • the temperature adjusting fluid is a fluid having a temperature higher than room temperature (27 ° C.).
  • the temperature adjusting fluid heats the cathode intermediate member 76.
  • the temperature adjusting fluid cools the cathode intermediate member 76.
  • the cathode intermediate member 76 is cooled by the temperature adjusting fluid so that the temperature of the cathode intermediate member 76 does not gradually increase due to continuous film formation.
  • 3 shows a structure in which three hot water pipes 28 connected to the electrode unit 31 are collectively connected to one hot water circulator 32.
  • the hot water circulator 32 includes the electrode unit 31. It may be provided for each.
  • FIG. 5 is a perspective view seen from a certain position
  • FIG. 6 is a perspective view seen from a position different from the position seen in FIG. It is.
  • FIG. 7 is a partial cross-sectional view of the cathode unit 68 and the anode 67 (counter electrode).
  • the electrode unit 31 can be attached to and detached from three openings 26 formed in the second side surface 27 of the film forming chamber 11 (see FIG. 3). Wheels 61 are provided below the electrode unit 31, and the electrode unit 31 is movable on the floor surface.
  • the bottom plate portion 62 to which the wheels 61 are attached is provided with a side plate portion 63 that rises from the bottom plate portion 62 along the vertical direction.
  • the side plate portion 63 is formed in a size larger than the opening portion 26 so as to close the opening portion 26 of the second side surface 27 of the film forming chamber 11. That is, the side plate portion 63 constitutes a part of the wall surface of the film forming chamber 11.
  • the first plate surface 65 of the side plate portion 63 (one surface of the side plate portion 63, the surface facing the inside of the film forming chamber 11) is used when a film is formed on the substrate W.
  • An anode 67 and a cathode unit 68 are provided so as to face each other.
  • the anode 67 is arranged so as to be spaced from both sides of the cathode unit 68 so as to sandwich the cathode unit 68, and a film formation space 81 is formed between each cathode unit 68 and the anode 67. Is formed.
  • a drive mechanism 71, a matching box 72, and a connector part 64 are attached to the second plate surface 69 of the side plate portion 63 (the other surface of the side plate portion 63).
  • the drive mechanism 71 is used to drive the anode 67.
  • the matching box 72 is used to supply power to the cathode unit 68 when a film is formed on the substrate W.
  • a hot water pipe 28 (see FIG. 3) is connected to the connector portion 64.
  • the side plate portion 63 is formed with a connection portion (not shown) used as a pipe for supplying a film forming gas (process gas) to the cathode unit 68.
  • a heater H is incorporated in the anode 67 as a temperature control device that adjusts the temperature of the substrate W.
  • the two anodes 67 and 67 are driven by a drive mechanism 71 provided on the side plate portion 63 in a direction in which the anode 67 approaches the cathode unit 68 and a direction in which the anode 67 moves away from the cathode unit 68, that is, in the horizontal direction. It is movable.
  • the drive mechanism 71 controls the distance between the substrate W and the cathode unit 68.
  • the two anodes 67 and 67 move toward the cathode unit 68 (see the arrow in FIG. 7) and come into contact with the substrate W. Further, the two anodes 67 and 67 move so as to approach the cathode unit 68, and the distance between the substrate W and the cathode unit 68 is adjusted to a desired distance. Thereafter, a film forming process for forming a film on the substrate W is performed. After the film forming process is completed, the anodes 67 and 67 move away from the cathode unit 68.
  • the drive mechanism 71 controls the positions of the anodes 67 and 67, whereby the substrate W can be easily taken out from the electrode unit 31.
  • the anode 67 is attached to the drive mechanism 71 via a hinge (not shown) or the like, and a surface 67A facing the cathode unit 68 of the anode 67 is formed in a state where the electrode unit 31 is pulled out from the film forming chamber 11. It can be rotated (opened) until it is substantially parallel to the first plate surface 65 of the side plate portion 63. That is, the anode 67 is configured to be able to turn approximately 90 ° when viewed from the vertical direction of the bottom plate portion 62 (see FIG. 5).
  • FIG. 8 is a perspective view showing the cathode intermediate member 76.
  • FIG. 9 is an enlarged cross-sectional view showing a portion indicated by reference symbol A in FIG.
  • the cathode unit 68 includes a shower plate 75 (cathode), a cathode intermediate member 76 (electrode plate), a heat exchange plate 91, an exhaust duct 79, and a floating capacitor 82. Yes.
  • the cathode intermediate member 76 is in contact with the outer peripheral portion of the shower plate 75.
  • the heat exchange plate 91 is provided in a space 77 formed between the shower plate 75 and the cathode intermediate member 76.
  • the exhaust duct 79 is provided on the outer periphery of the cathode intermediate member 76.
  • the shower plates 75 and 75 are formed of stainless steel or the like, and are disposed at positions facing both surfaces (both sides) of the cathode intermediate member 76 so as to sandwich the cathode intermediate member 76, and are opposed to the anodes 67 and 67.
  • a plurality of small holes 74 are formed in each of the shower plates 75 and 75, and a film forming gas is jetted toward the substrate W through the small holes 74.
  • the shower plates 75 and 75 are connected to the matching box 72 via the cathode intermediate member 76 and function as cathodes (high frequency electrodes).
  • the cathode intermediate member 76 has a pair of first intermediate member piece 76a and second intermediate member piece 76b.
  • the first intermediate member piece 76a and the second intermediate member piece 76b are made of aluminum or the like and are formed in a flat plate shape.
  • the first intermediate member piece 76 a and the second intermediate member piece 76 b are overlapped so as to face each other in a direction perpendicular to the surface of the cathode intermediate member 76.
  • the first intermediate member piece 76 a and the second intermediate member piece 76 b are integrally fastened (fixed) by bolts 93.
  • the first intermediate member piece 76a has a female screw portion 94
  • the second intermediate member piece 76b has a bolt hole 95 (through hole).
  • a counterbore part 95a is formed in the bolt hole 95, and the head of the bolt 93 does not protrude from the surface of the cathode intermediate member 76, and is positioned in the counterbore part 95a.
  • a flange portion 73 that can come into contact with the shower plates 75 and 75 is formed integrally with the cathode intermediate member 76 on the outer peripheral portion of the cathode intermediate member 76.
  • the cathode intermediate member 76 is electrically connected to a high-frequency power source (not shown) via a matching box 72. Thereby, in order to generate plasma between the shower plate 75 and the anode 67, a voltage having the same potential and the same phase is applied to the shower plates 75 and 75 via the cathode intermediate member 76.
  • the matching box 72 has a function of performing matching (impedance matching) between the cathode intermediate member 76 and the high frequency power source, and one matching box 72 is provided on the second plate surface 69 of the side plate portion 63 of the electrode unit 31.
  • the cathode intermediate member 76 is provided with a power feeding point to which a voltage supplied from a high frequency power source via the matching box 72 is applied.
  • Each of the feeding points is located on the upper side surface and the lower side surface in the height direction of the cathode intermediate member 76 (direction perpendicular to the floor surface). That is, the cathode intermediate member 76 has a total of two feeding points. It is arranged. Between these power supply points and the matching box 72, wiring for electrically connecting the power supply points and the matching box 72 is laid.
  • the wiring extends from the matching box 72 and is laid so as to reach each power feeding point along the outer periphery of the cathode intermediate member 76.
  • the outer periphery of the cathode intermediate member 76 and the periphery of the power supply point and the wiring are surrounded by an insulating member 89 made of alumina or quartz, for example.
  • a water pipe 92 (temperature adjusting fluid flow path, cooling flow path) through which hot water supplied from the hot water circulator 32 (see FIG. 3) is embedded is embedded.
  • the water pipe 92 includes an upper water channel 92a, an intermediate water channel 92b, and a lower water channel 92c.
  • the upper water channel 92a is laid on the upper portion (upper side in FIG. 8) of the cathode intermediate member 76 in the height direction.
  • the intermediate water channel 92 b is laid at the center of the cathode intermediate member 76 in the height direction.
  • the lower water channel 92 is laid on the lower portion (lower side in FIG. 8) of the cathode intermediate member 76 in the height direction.
  • the upper water channel 92a extends from the side plate portion 63 of the electrode unit 31 toward the center of the cathode intermediate member 76 at a center position in the height direction of the cathode intermediate member 76 (reference numeral 200). Further, the upper water channel 92a is bent toward the upper portion in the height direction (reference numeral 201) at a position close to the side plate portion 63 of the cathode intermediate member 76 (in the vicinity of the root portion 76c), and extends toward the upper portion in the height direction. (Reference numeral 202).
  • the upper water channel 92a is a position near the side plate portion 63 of the cathode intermediate member 76 (near the root portion 76c) and bends in the upper portion in the height direction (reference numeral 203), and the horizontal direction (floor surface) of the cathode intermediate member 76 In the direction horizontal to the front end 76d of the cathode intermediate member 76 (reference numeral 204). Further, the upper water channel 92a bends toward the lower portion in the height direction (reference numeral 205) and slightly extends toward the lower portion in the height direction (reference numeral 206) at a position close to the tip portion 76d of the cathode intermediate member 76. .
  • the upper water channel 92a is bent at a central position in the height direction (reference numeral 207) and slightly extends from the tip 76d of the electrode unit 31 toward the side plate portion 63 (reference numeral 208). Further, the upper water channel 92 a is bent at the positions indicated by reference numerals 209 and 210, extends in the horizontal direction as indicated by reference numeral 211, and is bent at the position indicated by reference numeral 212. Thus, the upper water channel 92 a is formed so as to be folded back toward the side plate portion 63. Further, the upper water channel 92a is bent in a U shape so as to include the position indicated by reference numeral 212, and is connected to the intermediate water channel 92b.
  • the intermediate water channel 92b extends from a position close to the side plate portion 63 of the cathode intermediate member 76 (near the root portion 76c) to a position close to the tip end portion 76d at the center position in the height direction of the cathode intermediate member 76.
  • (Reference numeral 213) bends in a U-shape and extends from a position close to the tip 76d toward a position near the root 76c (reference numeral 214). That is, the intermediate water channel 92b is formed to reciprocate once along the horizontal direction.
  • the lower water channel 92c is connected to the intermediate water channel 92b at a position indicated by reference numeral 215 that is bent in a U-shape.
  • the lower water channel 92c extends in the horizontal direction from the position indicated by reference numeral 215 toward the distal end portion 76d, bends at the positions indicated by reference numerals 216 and 217, and extends slightly in the horizontal direction toward the distal end portion 76d. (Reference numeral 208).
  • the lower water channel 92c slightly extends toward the lower portion in the height direction (reference numeral 219). Further, the lower water channel 92c is bent at a position close to the distal end portion 76d and in the lower portion in the height direction (reference numeral 220), and extends toward the side plate portion 63 in the horizontal direction of the cathode intermediate member 76 (reference numeral 221). ).
  • the lower water channel 92c is a position close to the side plate portion 63 of the cathode intermediate member 76 (near the root portion 76c), bends at the lower portion in the height direction (reference numeral 222), and extends toward the upper portion in the height direction. (Reference numeral 223). Furthermore, the lower water channel 92c bends toward the side plate portion 63 at a position close to the side plate portion 63 of the cathode intermediate member 76 (near the root portion 76c) (reference numeral 224), and at the center position in the height direction of the electrode unit 31. It extends toward the side plate portion 63 (reference numeral 225).
  • the lower water channel 92c is formed so as to be folded back toward the side plate portion 63, and is formed so as to return to the center position in the height direction.
  • the water pipe 92 is formed by a single linear water channel in which a straight line and a curve are combined, and the upper water channel 92a, the intermediate water channel 92b, and the lower water channel 92c communicate with each other.
  • the water piping 92 is arrange
  • the intermediate member pieces 76a and 76b are joined by welding, and the water pipe 92 is made of stainless steel or the like.
  • the cathode intermediate member 76 has an outer peripheral portion 76e and a central portion 76f.
  • the water channel is arranged so that the upper water channel 92a, the intermediate water channel 92b, and the lower water channel 92c are concentrated in the central portion 76f.
  • the structure in which one linear water channel is formed in the cathode intermediate member 76 has been described.
  • this structure is an embodiment of the present invention, and the present invention does not limit this structure.
  • the cathode intermediate member 76 may be provided with a branching portion that branches one water pipe into two or more water pipes. Further, the pattern of the water channel is appropriately determined so that the water channel concentrates on the central portion 76f.
  • FIG. 10 is a plan view showing the heat exchange plate 91.
  • the heat exchange plate 91 is made of aluminum and is provided in a space 77 formed between the shower plate 75 and the cathode intermediate member 76. Yes.
  • the heat exchange plate 91 is composed of a pair of first plate pieces 101 and second plate pieces 102.
  • the first plate piece 101 and the second plate piece 102 are formed in a flat plate shape so as to correspond to the shape of the space 77.
  • the first plate piece 101 and the second plate piece 102 are overlapped along the direction in which the cathode unit 68 faces the anode 67, accommodated in the space 77, and fastened (fixed) to the cathode intermediate member 76 by bolts 97. Has been.
  • a bolt hole 98 (through hole) is formed in each of the pair of first plate piece 101 and second plate piece 102, and a female screw part 99 is formed in the cathode intermediate member 76.
  • a counterbore part 98a is formed, and the head of the bolt 97 does not protrude from the surface of the heat exchange plate 91 but is positioned in the counterbore part 98a.
  • the first plate piece 101 which is one of the pair of plate pieces, has a surface 101a (first contact surface), and the second plate piece 102, which is the other plate piece, has a surface 102a (second surface). Contact surface).
  • the surface 101 a is in contact with the cathode intermediate member 76, and the surface 102 a is in contact with the shower plate 75.
  • the surface 101a of the first plate piece 101 is embossed, and a plurality of first recesses 103 are formed on the surface 101a by this embossing.
  • the surface 102a of the second plate piece 102 is also embossed, and a plurality of second recesses 104 are formed on the surface 102a by this embossing.
  • the tip of the partition wall 105 (rising wall) formed around the first recess 103 of the first plate piece 101 is in contact with the cathode intermediate member 76.
  • the tip of the partition wall 106 (rising wall) formed around the second recess 104 of the second plate piece 102 is in contact with the shower plate 75.
  • the partition 106 may be formed in an independent column shape.
  • the film forming gas flows around the partition wall 106 in the space between the shower plate 75 and the second plate piece 102.
  • the deposition gas is not supplied only to each of the plurality of second recesses 104, but is supplied to the second recess 104, which is one space defined by the partition wall 106.
  • the film gas is supplied to the film formation space 81 through the small holes 74 of the shower plate 75.
  • the partition wall 105 may be formed in an independent column shape.
  • the film forming gas flows around the partition wall 105 in the space between the cathode intermediate member 76 and the first plate piece 101.
  • the deposition gas is not supplied only to each of the plurality of first recesses 103, but the deposition gas is supplied to the first recess 103 (space 77) that is one space defined by the partition wall 105.
  • the film forming gas is supplied into the second recess 104 through the third flow path 110.
  • the embossing in the present embodiment is one of the uneven processes of the present invention, that is, one of the processing methods for forming the uneven parts (the first recessed part 103 and the second recessed part 104) on the surfaces 101a and 102a. It is. A known method may be used as long as it is a method for forming such an uneven portion.
  • the thickness of the partition 105 of the first plate piece 101 and the partition 106 of the second plate piece 102 is set so that a desired heat capacity can be exchanged between the cathode intermediate member 76 and the shower plate 75.
  • the thickness of the partition wall 105 and the thickness of the partition wall 106 may be different.
  • the second recess 104 of the second plate piece 102 that is in contact with the shower plate 75 is formed at a position corresponding to the plurality of small holes 74 formed in the shower plate 75.
  • the shape or size of the second recess 104 is determined so that the small hole 74 is not blocked by the partition wall 106 of the second plate piece 102.
  • the heat exchange plate 91 is formed with a gas flow path 107 for introducing a film forming gas supplied from a gas supply device (not shown) into the cathode unit 68.
  • the gas flow path 107 includes a first flow path 108, a second flow path 109, and a third flow path 110.
  • the first flow path 108 disperses the film forming gas introduced into the heat exchange plate 91 over the entire heat exchange plate 91, for example, in the height direction of the heat exchange plate 91 (with respect to the floor surface). It extends in the vertical direction) and in the horizontal direction (the direction horizontal to the floor). Further, as shown in FIG.
  • a second flow path 109 extending from the first flow path 108 toward the cathode intermediate member 76 is formed, and the second flow path 109 has a thickness of the first plate piece 101. It penetrates along the vertical direction.
  • the second flow path 109 connects the first flow path 108 and the space 77 of the first recess 103.
  • the third flow path 110 is formed so as to penetrate along the thickness direction of the first plate piece 101 and the second plate piece 102.
  • the third flow path 110 connects the space 77 of the first recess 103 and the space of the second recess 104.
  • a groove 108 a (first groove) is formed on the first surface 101 b of the first plate piece 101 that contacts the second plate piece 102, and a groove is formed on the second surface 102 b of the second plate piece 102 that contacts the first plate piece 101.
  • 108b (second groove) is formed. Further, in the mating surface between the first plate piece 101 and the second plate piece 102, the first surface 101b and the second surface 102b are in contact with each other, and the position of the groove 108a and the position of the 108b are matched (overlapping).
  • the first flow path 108 is formed.
  • the groove forming the first flow path 108 may be formed in either the first plate piece 101 or the second plate piece 102.
  • the second flow path 109 is formed so as to avoid the partition wall 105 of the first plate piece 101.
  • the third flow path 110 is formed at a position where the first recess 103 overlaps the second recess 104 in the overlapping direction of the first plate piece 101 and the second plate piece 102. That is, the third flow path 110 allows the first concave portion 103 of the first plate piece 101 and the second concave portion 104 of the second plate piece 102 to communicate with each other.
  • the film forming gas introduced into the heat exchanging plate 91 flows through the first flow path 108 and passes through the second flow path 109 to the first plate piece 101.
  • the first recess 103 is discharged (see arrow Y1 in FIG. 9). That is, the film forming gas flows toward a position close to the cathode intermediate member 76. Further, the space 77 formed by the first recess 103 and the cathode intermediate member 76 is filled with the film forming gas, and the film forming gas passes through the third flow path 110 and the second recess 104 of the second plate piece 102. (See arrow Y2 in FIG. 9).
  • the film forming gas is supplied to the substrate W through the small holes 74 of the shower plate 75. That is, the film forming gas that flows toward the position close to the cathode intermediate member 76 flows from the cathode intermediate member 76 toward the shower plate 75.
  • a stainless steel pipe 111 is laid in each of the flow paths 108, 109 and 110. The film forming gas flows in the pipe 111. For this reason, the film forming gas is prevented from leaking from the middle of each flow path 108, 109, 110.
  • the exhaust duct 79 provided on the outer periphery of the cathode intermediate member 76 is used to exhaust (remove) the film forming gas or the reaction product (powder) in the film forming space 81.
  • the exhaust port 80 is formed so as to communicate with (be face) the film formation space 81 formed between the substrate W and the shower plate 75 when performing the film formation process.
  • a plurality of the exhaust ports 80 are formed along the peripheral edge of the cathode unit 68, and are configured so that the film forming gas or the reaction product (powder) can be sucked and removed almost uniformly on the entire circumference of the cathode unit 68. Yes.
  • an opening (not shown) is formed on the surface of the exhaust duct 79 located below the cathode unit 68 and facing the film forming chamber 11.
  • the film forming gas removed through the exhaust port 80 is discharged into the film forming chamber 11 through this opening.
  • the gas discharged into the film formation chamber 11 is exhausted to the outside of the film formation chamber 11 through an exhaust pipe 29 provided at the lower side of the film formation chamber 11.
  • a dielectric and a floating capacitor 82 is provided between the exhaust duct 79 and the cathode intermediate member 76, that is, on the outer peripheral surface of the flange portion formed on the cathode intermediate member 76.
  • the stray capacitance body 82 has a stacked space.
  • the exhaust duct 79 is connected to the ground potential.
  • the exhaust duct 79 also functions as a shield frame used to prevent abnormal discharge that occurs in the shower plate 75 and the cathode intermediate member 76.
  • a mask 78 is provided on the peripheral edge of the cathode unit 68 so as to cover a portion (region) extending from the outer periphery of the exhaust duct 79 to the outer periphery of the cathode intermediate member 76.
  • the mask 78 covers a clamping piece 59A (see FIG. 11) of the clamping part 59 (described later) provided on the carrier 21, and is present in the space part 77 integrally with the clamping piece 59A when the film forming process is performed.
  • a gas flow path R that guides the film forming gas or the reaction product (powder) to the exhaust duct 79 is formed. That is, the gas flow path R is formed between the mask 78 and the shower plate 75 covering the carrier 21 (the sandwiching piece 59A) and between the mask 78 and the exhaust duct 79.
  • a moving rail 37 is formed so that the carrier 21 can move between the film forming chamber 11 and the loading / unloading chamber 13 and between the loading / unloading chamber 13 and the substrate desorption chamber 15. It is laid between the film chamber 11 and the substrate desorption chamber 15.
  • the preparation / removal chamber 13 is formed in a box shape.
  • a carrier carry-in / out port (not shown) through which the carrier 21 on which the substrate W is mounted is provided on one side surface (lower surface in FIG. 1) of the preparation / removal chamber 13.
  • a shutter 36 that can ensure the airtightness of the charging / extraction chamber 13 is provided at the carrier carry-in / out entrance.
  • a vacuum pump (not shown) is connected to the preparation / removal chamber 13, and the vacuum pump depressurizes the inside of the preparation / removal chamber 13 so as to be in a vacuum state.
  • the loading / unloading chamber 13 is provided with a push-pull mechanism (not shown) that moves the carrier 21 between the film forming chamber 11 and the loading / unloading chamber 13 along the moving rail 37.
  • a moving mechanism (not shown) is provided in the preparation / removal chamber 13 in order to accommodate the pre-treatment substrate and the post-treatment substrate simultaneously (collectively). This moving mechanism moves the carrier 21 by a predetermined distance in a direction substantially orthogonal to the direction in which the moving rail 37 is laid in a plan view viewed from the vertical direction of the floor surface on which the film forming apparatus 10 is installed.
  • the pre-treatment substrate can be attached to the carrier 21 arranged on the moving rail 37, and the post-treatment substrate can be detached from the carrier 21.
  • the substrate desorption chamber 15 three carriers 21 can be arranged in parallel.
  • the substrate removal robot 17 has a drive arm 45, and has a suction unit that sucks the substrate W at the tip of the drive arm 45.
  • the drive arm 45 drives between the carrier 21 disposed in the substrate removal chamber 15 and the substrate storage cassette 19. Specifically, the drive arm 45 can take out the pre-treatment substrate from the substrate accommodation cassette 19 and attach the pre-treatment substrate to the carrier 21 disposed in the substrate removal chamber 15. Further, the drive arm 45 can remove the processed substrate from the carrier 21 that has returned to the substrate removal chamber 15 and transport the substrate to the substrate storage cassette 19.
  • FIG. 8 is a perspective view showing the carrier 21.
  • the carrier 21 is used for transporting the substrate W, and two frame-shaped frames 51 to which the substrate W can be attached are formed. That is, two substrates W can be attached to one carrier 21.
  • the two frames 51 and 51 are integrated by a connecting member 52 at an upper portion thereof. Further, above the connecting member 52, a wheel 53 placed on the moving rail 37 is provided. When the wheel 53 rolls on the moving rail 37, the carrier 21 can move along the moving rail 37.
  • a frame holder 54 is provided below the frame 51 in order to suppress the shaking of the substrate W when the carrier 21 moves.
  • the front end of the frame holder 54 is fitted to a rail member (not shown) provided on the bottom surface of each chamber and having a concave cross-sectional shape.
  • a rail member (not shown) is arranged in a direction along the moving rail 37. If the frame holder 54 is composed of a plurality of rollers, the substrate W can be transported more stably.
  • Each of the frames 51 has an opening 56, a peripheral edge 57, and a clamping part 59.
  • the sandwiching portion 59 includes a sandwiching piece 59A that abuts on the front surface of the substrate W and a sandwiching piece 59B that abuts on the back surface (back surface) of the substrate W.
  • the clamping pieces 59A and 59B are connected via a spring or the like. By this spring, a biasing force acts in a direction in which the sandwiching piece 59A and the sandwiching piece 59B are close to each other.
  • the clamping piece 59A is movable in accordance with the movement of the anode 67 in the direction in which the clamping piece 59A approaches the clamping piece 59B or in the direction in which the clamping piece 59A moves away from the clamping piece 59B.
  • one carrier 21 is attached on one moving rail 37. That is, one carrier 21 that can hold a pair (two) of substrates W on one moving rail 37 is attached. Accordingly, in one set of film forming apparatus 10, three carriers 21 are attached, that is, three pairs (six substrates) are held.
  • a method for forming a film on the substrate W using the film forming apparatus 10 will be described.
  • the drawing of one substrate film forming line 16 is used, but a film is also formed on the substrate in the other three substrate film forming lines 16 by substantially the same method.
  • a substrate storage cassette 19 that stores a plurality of pre-processed substrates (substrates W) is disposed at a predetermined position.
  • the drive arm 45 of the substrate removal robot 17 is moved to take out one unprocessed substrate from the substrate storage cassette 19, and this unprocessed substrate is placed on the carrier 21 (see FIG. 8) installed in the substrate removal chamber 15. Install.
  • the arrangement direction of the unprocessed substrates arranged in the horizontal direction in the substrate accommodation cassette 19 changes to the vertical direction, and the unprocessed substrates are attached to the carrier 21.
  • This operation is repeated once, and two pre-treatment substrates are attached to one carrier 21. Further, this operation is repeated to attach the pre-treatment substrates to the remaining two carriers 21 installed in the substrate removal chamber 15. That is, at this stage, six pre-treatment substrates are attached to the three carriers 21.
  • the three carriers 21 to which the unprocessed substrates are attached move substantially simultaneously along the moving rail 37 and are accommodated in the preparation / removal chamber 13.
  • the shutter 36 at the carrier loading / unloading port (not shown) of the preparation / removal chamber 13 is closed.
  • the inside of the preparation / removal chamber 13 is kept in a vacuum state using a vacuum pump (not shown).
  • each of the three carriers 21 is moved in a direction orthogonal to the direction in which the moving rail 37 is laid using a moving mechanism. Move a predetermined distance.
  • the shutter 25 of the film forming chamber 11 is opened, and the carrier 21 to which the post-processing substrate after the film forming process is completed in the film forming chamber 11 is loaded using a push-pull mechanism (not shown). Move to. Further, the carrier 21 holding the unprocessed substrate is moved to the film forming chamber 11 using a push-pull mechanism. After the movement of the carrier 21 is completed, the shutter 25 is closed. Note that the inside of the film forming chamber 11 is kept in a vacuum state. At this time, the substrate before processing attached to the carrier 21 moves along a direction parallel to the surface of the substrate before processing. In the film forming chamber 11, the pre-treatment substrate is inserted along the vertical direction between the anode 67 and the cathode unit 68 so that the surface of the pre-treatment substrate is substantially parallel to the direction of gravity.
  • the drive mechanism 71 moves the two anodes 67 of the electrode unit 31 in the direction in which the anode 67 approaches the cathode unit 68 (see the arrow in FIG. 7), so that the anode 67 and the back surface of the substrate W come into contact with each other.
  • the pre-treatment substrate moves toward the cathode unit 68 so as to be pushed by the anode 67.
  • the pre-treatment substrate moves toward the cathode unit 68 until the gap between the substrate W and the shower plate 75 of the cathode unit 68 reaches a predetermined distance (film formation distance).
  • the gap (film formation distance) between the substrate W and the shower plate 75 of the cathode unit 68 is 5 to 15 mm, for example, about 5 mm.
  • the sandwiching piece 59A of the carrier 21 in contact with the surface of the substrate W is displaced so as to be separated from the sandwiching piece 59B as the substrate W moves (the anode 67 moves).
  • the substrate W is sandwiched between the anode 67 and the sandwiching piece 59A.
  • the clamping piece 59A comes into contact with the mask 78, and at this point, the movement of the anode 67 stops.
  • the substrate W is heated by the heater H built in the anode 67 so that the temperature of the substrate W becomes a desired temperature.
  • the hot water circulator 32 (see FIG. 3) is driven to circulate the hot water through the water pipe 92 embedded in the cathode intermediate member 76.
  • the temperature of the heater H rises to about 200 ° C., for example, but the temperature of the hot water circulating in the water pipe 92 is set to about 70 ° C. to 80 ° C., for example.
  • the heat of the cathode intermediate member 76 is transmitted to the shower plate 75 via the heat exchange plate 91.
  • the direction in which heat is transmitted is not necessarily the direction from the cathode intermediate member 76 toward the shower plate 75.
  • heat is transmitted from the shower plate 75 toward the cathode intermediate member 76, and this heat is transmitted to the hot water circulating in the water pipe 92. . That is, in this case, the substrate W is cooled through the shower plate 75 by the hot water circulating in the water pipe 92.
  • the substrate W is heated so that the temperature becomes about 170 ° C. by the heat of the heater H whose temperature is set to about 200 ° C. and the heat transmitted to the shower plate 75, The temperature is kept constant. That is, the heater H (anode 67) heats the substrate W, while the shower plate 75 cools the substrate W, and the temperature of the substrate W is adjusted.
  • an upper water channel 92a, an intermediate water channel 92b, and a lower water channel 92c are formed by a single linear water channel that is a combination of a straight line and a curved line. . Further, as shown in FIG.
  • the water pipe 92 is arranged so that the upper water passage 92 a, the intermediate water passage 92 b, and the lower water passage 92 c are denser in the center portion 76 f than the outer peripheral portion 76 e of the cathode intermediate member 76. For this reason, in the cathode intermediate member 76, the temperature of the central portion 76f is lower than the temperature of the outer peripheral portion 76e, and the temperature gradually decreases in the direction from the outer peripheral portion 76e to the central portion 76f.
  • FIG. 12 shows the relationship between the position and temperature of the cathode intermediate member 76, and is a graph showing the temperature change at the location where the temperature of the cathode intermediate member 76 is measured.
  • FIG. 12 shows the temperature distribution in the case and when the flow rate is 20 [l / min].
  • (A) shows the condition where the heat quantity is 3 [Kw] and the flow rate is 20 [l / min]
  • (B) shows the heat quantity is 3 [Kw] and the flow rate is 10 [l / min].
  • (C) shows the condition where the amount of heat is 6 [Kw] and the flow rate is 20 [l / min]
  • (D) shows the condition where the amount of heat is 6 [Kw] and the flow rate is The condition of 10 [l / min] is shown. Further, the direction from the left end O to the right end P in FIG. 12 matches the direction indicated by the arrow A in FIG.
  • the region between the left end O and the right end P is a lower portion in the height direction and close to the side plate portion 63 (base portion 76c) and an upper portion in the height direction and opposite to the side plate portion 63. It coincides (sets) with the region between (tip portion 76d). Further, the center position between the left end O and the right end P corresponds to the center position of the cathode intermediate member 76.
  • the temperature of the central portion 76f is lower than the temperature of the outer peripheral portion 76e, and the temperature gradually decreases in the direction from the outer peripheral portion 76e to the central portion 76f.
  • the piping pattern of the water piping 92 is set so as to obtain the temperature distribution of the entire cathode intermediate member 76 as shown in FIG.
  • the temperature difference between the high temperature portion and the low temperature portion in the cathode intermediate member 76 is reduced, and is generated in the cathode intermediate member 76. Heat can be dispersed. Thereby, it is possible to prevent the cathode intermediate member 76 from being damaged due to thermal distortion.
  • the temperature difference between the outer peripheral portion 76e and the central portion 76f of the cathode intermediate member 76 is set to about 20 ° C. to 50 ° C., damage to the substrate W due to thermal distortion can be prevented. If the temperature is uniform throughout the substrate W, thermal distortion does not occur.
  • a gas supply device (not shown) introduces a film forming gas into the heat exchange plate 91 of the cathode unit 68.
  • the film forming gas flows through the first flow path 108 of the gas flow path 107 and is discharged to the first recess 103 of the first plate piece 101 through the second flow path (see arrow Y1 in FIG. 9).
  • the space formed by the first recess 103 and the cathode intermediate member 76 is filled with the film forming gas, and then led to the second recess 104 of the second plate piece 102 via the third flow path 110 (FIG. 9 (see arrow Y2).
  • a film forming gas is ejected toward the substrate W through the small holes 74 of the shower plate 75.
  • the matching box 72 is activated and a voltage supplied from the high frequency power source is applied to the shower plate 75 via the matching box 72 and the cathode intermediate member 76 to form a film on the surface of the substrate W.
  • a voltage supplied from the high frequency power source is applied to the shower plate 75 via the matching box 72 and the cathode intermediate member 76 to form a film on the surface of the substrate W.
  • the heater H of the anode 67 when the temperature of the substrate W reaches a desired temperature, the heating operation is stopped.
  • plasma is generated in the film formation space 81. For this reason, when the substrate W is heated by the heat resulting from the generation of plasma as the processing time elapses, even if the heating of the anode 67 is stopped, the temperature of the substrate W rises above a desired temperature. There is a fear.
  • the substrate W is cooled via the heat exchange plate 91 and the shower plate 75.
  • the anode 67 can also function as a heat radiating plate for cooling the substrate W whose temperature has increased excessively. Therefore, the temperature of the substrate W is adjusted to a desired temperature regardless of the elapsed time of the film forming process.
  • a plurality of layers are formed on the substrate W by switching the type of film forming gas material supplied to the film formation space 81 every predetermined time. Can be formed.
  • the gas or the reaction product (powder) in the film forming space 81 is exhausted through the exhaust port 80 formed in the peripheral portion of the cathode unit 68.
  • the gas or reaction product in the film formation space 81 is exhausted to the exhaust duct 79 at the peripheral edge of the cathode unit 68 via the gas flow path R and the exhaust port 80.
  • the gas or reaction product passes through the opening of the exhaust duct 79 facing the inside of the film forming chamber 11 in the lower part of the cathode unit 68.
  • the gas or the reaction product is exhausted to the outside of the film forming chamber 11 from an exhaust pipe 29 provided at the lower side of the film forming chamber 11.
  • the reaction product (powder) generated when forming a film on the substrate W adheres to and accumulates on the inner wall surface of the exhaust duct 79 and is collected and disposed of. Since all the electrode units 31 in the film forming chamber 11 perform the same process as described above, films can be formed simultaneously on six substrates.
  • the anode 67 is moved in the direction in which the two anodes 67 are separated from each other by the drive mechanism 71, and the processed substrate and the frame 51 (the sandwiching piece 59A) are returned to their original positions. Further, by moving the anode 67 in a direction in which the two anodes 67 are separated from each other, the substrate after processing is separated from the anode 67.
  • the shutter 25 of the film formation chamber 11 is opened, and the carrier 21 is moved to the preparation / removal chamber 13 using a push-pull mechanism (not shown).
  • the inside of the preparation / removal chamber 13 is depressurized, and the carrier 21 to which the pre-treatment substrate on which a film is to be formed next is attached is already located in the preparation / removal chamber 13. Then, in the preparation / removal chamber 13, the heat stored in the processed substrate is transferred to the unprocessed substrate, and the temperature of the processed substrate is lowered.
  • the carrier 21 on which the substrate before processing is moved moves into the film forming chamber 11
  • the carrier 21 on which the substrate after processing is mounted is returned to the position of the moving rail 37 by the moving mechanism.
  • the shutter 25 is closed, the shutter 36 is opened, and the carrier 21 on which the processed substrate is mounted is moved to the substrate removal chamber 15.
  • the substrate removal robot 17 removes the processed substrate from the carrier 21 and transports the processed substrate to the substrate storage cassette 19.
  • the substrate storage cassette 19 on which the processed substrates are mounted is moved to a place (apparatus) where the next process is performed, and the film forming process in the film forming apparatus 10 is performed. Ends.
  • hot water can be circulated through the water pipe 92 embedded in the cathode intermediate member 76 to keep the temperature of the cathode intermediate member 76 constant.
  • the heat of the cathode intermediate member 76 is transmitted to the shower plate 75 via the heat exchange plate 91, and the temperature of the shower plate 75 can be kept constant.
  • the temperature of the shower plate 75 By keeping the temperature of the shower plate 75 constant, an increase in the temperature of the substrate W can be suppressed. For this reason, the quality of the film formed on the substrate W can be stabilized even if the number of batch processes increases.
  • a gas flow path 107 is provided in the heat exchange plate 91. For this reason, even if the space 77 formed between the cathode intermediate member 76 and the shower plate 75 is filled with the heat exchange plate 91, the plurality of small holes 74 provided in the shower plate 75 are formed. Thus, the deposition gas can be reliably supplied to the deposition surface of the substrate W. Therefore, a high quality film can be formed on the substrate W.
  • each of the surface 101a of the first plate piece 101 and the surface 102a of the second plate piece 102 constituting the heat exchange plate 91 is embossed.
  • a plurality of first recesses 103 are formed on the surface 101 a of the first plate piece 101
  • a plurality of second recesses 104 are formed on the surface 102 a of the second plate piece 102.
  • a pipe 111 is laid in the gas flow path 107 of the heat exchange plate 91, and the pipe 111 constitutes the gas flow path 107. For this reason, it is possible to prevent the deposition gas from leaking from the middle of the gas flow path 107. Therefore, the film forming gas introduced into the heat exchange plate 91 can be reliably guided to the small holes 74 of the shower plate 75, and the production efficiency can be improved.
  • the water pipe 92 embedded in the cathode intermediate member 76 is constituted by three water channels 92a to 92c.
  • the temperature distribution of the cathode intermediate member 76 is set so that the temperature of the cathode intermediate member 76 gradually decreases in the direction from the outer peripheral portion 76e of the cathode intermediate member 76 to the center portion 76f.
  • the temperature of the central portion 76f of the substrate W can be made lower than the temperature of the outer peripheral portion 76e (see FIG. 12). Therefore, it is possible to prevent damage to the substrate W due to thermal distortion.
  • the pair of first plate pieces 101 and second plate pieces 102 are overlapped along the direction in which the cathode unit 68 faces the anode 67. Therefore, the first flow path 108, the second flow path 109, and the third flow path 110 are formed in the first plate piece 101 and the second plate piece 102, and the first plate piece 101 and the second plate piece 102 are overlapped. By combining them, the gas flow path 107 can be formed.
  • a groove 108 a is formed on the first surface 101 b of the first plate piece 101
  • a groove 108 b is formed on the second surface 102 b of the second plate piece 102.
  • the first surface 101b is in contact with the second surface 102b so that the groove 108a overlaps the groove 108a. For this reason, compared with the case where the gas flow path 107 is formed in one plate, the process of forming the gas flow path 107 can be simplified, and the processing cost can be reduced.
  • the gas flow path 107 includes three flow paths 108, 109, and 110.
  • the film forming gas is discharged to the first recess 103 of the first plate piece 101 through the first flow path 108 and the second flow path 109 of the gas flow path 107. Thereafter, the film forming gas is guided to the small hole 74 of the shower plate 75 through the third flow path 110. Therefore, after the film forming gas introduced into the heat exchange plate 91 is dispersed throughout the space 77 located near the cathode intermediate member 76, the film forming gas is directed toward the plurality of small holes 74 of the shower plate 75. Can guide you. For this reason, the deposition gas can be ejected uniformly from the entire shower plate 75, and a film can be uniformly formed on the entire substrate W.
  • the technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
  • the present invention does not limit this structure, and the gas flow is performed such that the surface of the gas flow path 107 is exposed to the film forming gas without laying the pipe 111 in the gas flow path 107 of the heat exchange plate 91.
  • a film forming gas may flow in the passage 107.
  • the structure in which the water pipe 92 embedded in the cathode intermediate member 76 is configured by the three water channels 92a, 92b, and 92c has been described.
  • the present invention does not limit this structure, so that the temperature distribution of the cathode intermediate member 76 in which the temperature of the cathode intermediate member 76 gradually decreases in the direction from the outer peripheral portion 76e to the central portion 76f is obtained.
  • the pipe 92 may be laid.
  • hot water temperature adjustment fluid
  • the present invention does not limit the structure for circulating the hot water, and cold water (for example, water at about 25 ° C.) or oil may be used as the cooling medium instead of the hot water.
  • the temperature of the heater H is about 200 ° C.
  • the temperature of the hot water circulating in the water pipe 92 is about 70 ° C. to 80 ° C.
  • the temperature of the substrate W is about 170 ° C.
  • the present invention does not limit this temperature condition, and each temperature may be set according to the type of film formed on the substrate W, the heating capability of the heater H, and the like.
  • the gas flow path 107 formed in the heat exchange plate 91 is configured by the three flow paths 108, 109, and 110, and the film forming gas is uniformly ejected from the entire shower plate 75.
  • the present invention does not limit this structure, and it is sufficient that a gas flow path capable of ejecting the film forming gas from the entire shower plate 75 is formed.
  • the present invention can be applied to a film forming apparatus used for manufacturing a thin film solar cell.

Abstract

L'invention concerne un appareillage de dépôt chimique (10) qui comprend une unité cathode (68) comprenant une plaque électrode (76) à laquelle une tension électrique est appliquée, un passage d'écoulement (92) pour liquide de régulation de la température dans lequel un liquide de régulation de la température circule, et lequel est fixé sur la plaque électrode (76), une plaque d'arrosage (75) en contact avec la plaque électrode (76) et possédant plusieurs trous (74) qui dirigent le gaz de traitement en direction de la surface à traiter par dépôt chimique d'un substrat (W), une plaque (91) pour échanges thermiques située entre la plaque électrode (76) et la plaque d'arrosage (75), en contact avec à la fois la plaque électrode (76) et la plaque d'arrosage (75) et un passage d'écoulement (107) de gaz situé sur la plaque (91) pour échanges thermiques qui introduit le gaz de traitement dans la plaque (91) pour échanges thermiques et qui amène la gaz de traitement introduit dans la plaque (91) pour échanges thermiques dans les trous (74) de la plaque d'arrosage (75), ainsi qu'une anode (67).
PCT/JP2010/062784 2009-07-31 2010-07-29 Appareillage de dépôt chimique WO2011013746A1 (fr)

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JP2012182360A (ja) * 2011-03-02 2012-09-20 Ulvac Japan Ltd 成膜装置および成膜方法
US9493578B2 (en) 2009-09-02 2016-11-15 Xencor, Inc. Compositions and methods for simultaneous bivalent and monovalent co-engagement of antigens

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JP2005203627A (ja) * 2004-01-16 2005-07-28 Tokyo Electron Ltd 処理装置

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JPH08339984A (ja) * 1995-06-13 1996-12-24 Tokyo Electron Ltd プラズマ処理装置
JP2005123339A (ja) * 2003-10-15 2005-05-12 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置とプラズマｃｖｄ装置用電極
JP2005203627A (ja) * 2004-01-16 2005-07-28 Tokyo Electron Ltd 処理装置

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Publication number Priority date Publication date Assignee Title
US9493578B2 (en) 2009-09-02 2016-11-15 Xencor, Inc. Compositions and methods for simultaneous bivalent and monovalent co-engagement of antigens
JP2012182360A (ja) * 2011-03-02 2012-09-20 Ulvac Japan Ltd 成膜装置および成膜方法

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CN102473609A (zh) 2012-05-23
TW201117265A (en) 2011-05-16

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