WO2011010880A2 - Capteur transparent à base de cellule capable d’observation optique en temps réel de comportement de cellule, procédé de fabrication associé, et puce de capteur multi-détection associée - Google Patents

Capteur transparent à base de cellule capable d’observation optique en temps réel de comportement de cellule, procédé de fabrication associé, et puce de capteur multi-détection associée Download PDF

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Publication number
WO2011010880A2
WO2011010880A2 PCT/KR2010/004822 KR2010004822W WO2011010880A2 WO 2011010880 A2 WO2011010880 A2 WO 2011010880A2 KR 2010004822 W KR2010004822 W KR 2010004822W WO 2011010880 A2 WO2011010880 A2 WO 2011010880A2
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transparent
sensor
cell
group
ion
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PCT/KR2010/004822
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English (en)
Korean (ko)
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WO2011010880A3 (fr
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이내응
윤옥자
김덕진
녹 튜이 엔구엔튜이
손일륭
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성균관대학교 산학협력단
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Priority claimed from KR1020100071127A external-priority patent/KR101257221B1/ko
Publication of WO2011010880A2 publication Critical patent/WO2011010880A2/fr
Publication of WO2011010880A3 publication Critical patent/WO2011010880A3/fr
Priority to US13/354,490 priority Critical patent/US8926812B2/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28Electrolytic cell components
    • G01N27/30Electrodes, e.g. test electrodes; Half-cells
    • G01N27/305Electrodes, e.g. test electrodes; Half-cells optically transparent or photoresponsive electrodes

Definitions

  • the present invention can detect the ion concentration of the electrolyte according to the metabolic change of the cell by using an ion selective field effect transistor type sensor (ISFET) and an electrochemical sensor, and at the same time it is made of a transparent material to optically measure the cell
  • ISFET ion selective field effect transistor type sensor
  • the present invention relates to a transparent cell-based sensor capable of real-time optical observation of cell behavior, a manufacturing method thereof, and a multi-detection sensor chip using the same.
  • transistor-based biosensor having a structure including a transistor among the sensors for detecting biomolecules by electrical signals. This is manufactured by using a semiconductor process, and has an advantage of fast conversion of an electrical signal and easy integration of an integrated circuit and a MEMS, and thus many studies have been conducted.
  • US Patent No. 4,238,757 is a source patent for measuring biological response using a field effect transistor (hereinafter also referred to as 'FET'). It relates to a biosensor that measures the antigen-antibody response as a change in the semiconductor inversion layer due to a change in surface charge concentration and relates to proteins in biomolecules.
  • 'FET' field effect transistor
  • FET field effect transistor
  • the ion-selective field effect transistor type sensor applies a voltage V DS between the drain-source and a voltage V GS between the gate-source by using three electrodes of a source, a gate, and a drain.
  • the electrochemical sensor detects O 2 according to the current and impedance change generated by the oxidation and reduction reactions of the electrolyte.
  • the ion-selective field effect transistor type sensor is a type of transistor in which an insulated gate field effect transistor (IGFET) and an ion sensor are integrated. Since it is an ideal potentiometric detector in which the potential by the insulating film is measured, the output impedance can be reduced to a minimum by a feedback circuit, which is an extremely small and low output impedance ion sensor unlike the conventional ion sensor. .
  • IGFET insulated gate field effect transistor
  • the principle of operation is that the electrochemical potential difference at the interface between the solution and the sensing membrane changes with the ion concentration in the solution, and the change in the potential difference depends on the effective gate voltage (V G ) as the threshold voltage (V T ) changes. Causing a change in the drain current by changing the channel conductivity by the electric field effect. By measuring the change in the drain current, the change in the specific ion concentration in the solution is detected.
  • a sensor capable of sensing various ions can be fabricated by forming an ion sensing film that is selectively sensitive to a specific ion.
  • a voltage-current measurement method (voltammetry), which is a type of current measurement type, which is an electrochemical sensor, was proposed by Clark et al. In 1962, and an oxygen detection method and a hydrogen peroxide detection method have been reported.
  • biosensors are very small, and it is easy to apply the component measurement of micro-parts which was difficult to measure, and it combines various elements such as bio-related materials and electrical devices with molecular identification functions such as enzymes, antibodies, cells, and microorganisms.
  • bio-related materials and electrical devices with molecular identification functions such as enzymes, antibodies, cells, and microorganisms.
  • a biosensor is being developed, it is difficult to measure optically in a cell-based device because the device is not transparent. Thus, there has been no report on the measurement of cell behavior in real time.
  • An object of the present invention is to provide a transparent cell-based sensor capable of detecting various ions according to a biological change of a cell and at the same time being transparently manufactured to measure optical behavior by measuring optical behavior, and a method of manufacturing the same. .
  • the present invention is a transparent substrate
  • the ion selective field effect transistor type sensor includes a transparent drain electrode and a source electrode, a transparent semiconductor layer formed on the transparent drain electrode and a source electrode, a transparent ion sensitive insulator sensing layer formed on the transparent substrate, and a transparent ion sensitive insulator sensing layer. And a reference electrode formed between the transparent ion selective membrane formed on the transparent ion selective membrane,
  • the oxygen detecting electrochemical sensor provides a transparent cell-based sensor comprising a transparent counter electrode, a reference electrode, and a transparent working electrode formed on the transparent ion sensitive insulator sensing layer.
  • the present invention is a method for manufacturing a transparent cell-based sensor comprising an ion-selective field effect transistor type sensor and an oxygen sensing electrochemical sensor disposed in parallel on a transparent substrate,
  • step 1 Forming an ion selective field effect transistor type sensor on the transparent substrate (step 1); And forming an ion selective field effect transistor type sensor in step 1 and then forming an electrochemical sensor for oxygen sensing to be disposed in parallel with the ion selective field effect transistor type sensor (step 2). It provides a method for manufacturing a sensor.
  • the present invention is a multi-detection sensor chip comprising a transparent cell-based sensor and a readout conditioning circuit,
  • the transparent cell based sensor comprises a transparent substrate; An ion selective field effect transistor type sensor formed on the transparent substrate and an oxygen sensing electrochemical sensor formed to be disposed in parallel with the ion selective field effect transistor type sensor,
  • the read-out conditioning circuit provides a multi-detection sensor chip capable of optical measurement and electrochemical measurement, characterized in that the electrical signal transmitted from the transparent cell-based sensor is conditioned.
  • the transparent drain electrode and the source electrode may be formed using a transparent metal oxide, a conductive polymer, a nanomaterial, or a mixture thereof.
  • ITO Indium tin oxide
  • ZnO zinc oxide
  • IZO indium zinc oxide
  • AZO aluminum zinc oxide
  • ZTO zinc tin oxide
  • TiO 2 titanium dioxide
  • the conductive polymer may be polyaniline, polypyrrole, poly (3,4-ethylenedioxythiophene), and the nanomaterial may be graphene. ), Carbon nanotubes (CNT), nanowires (nanowire) and the like can be used.
  • the transparent ion selective membrane may be selected from among a pH detection membrane, a Ca 2+ detection membrane, a K + detection membrane, a Na + detection membrane, and a pCO 2 detection membrane according to ions to be detected.
  • the transparent cell-based sensor of the present invention can optically observe the real-time emergence of the cell as manufactured using a transparent material, and in the electrochemical sensor for oxygen detection and the ion-selective field effect transistor type sensor according to the metabolic change of the cell According to the change in the current value generated by the pH, K + , Ca 2+ , Na + , pCO 2 , O 2 concentration gradient changes, it has the effect of confirming the change in the characteristics of the cells according to the environment.
  • the transparent cell-based sensor according to the present invention can obtain accurate information such as changes in biological activity of biological cells, reaction mechanisms, response responses to foreign substances, and further, directly in evaluating the performance and toxicity of new drugs, environmental monitoring, and clinical diagnosis. Can be utilized.
  • the present invention provides a multi-detection sensor chip comprising the above-described transparent cell-based sensor and the lead-out conditioning circuit electrically connected to the transparent cell-based sensors, it is possible to optically observe the real-time emergence of the cell In addition, it is possible to increase the detection reliability by electrochemically detecting the signal generated from the transparent cell-based sensor.
  • FIG. 1 is a view schematically showing the configuration of a transparent cell-based sensor according to the present invention.
  • FIG. 2 is a view showing the components of the electrochemical sensor and ion selective field effect transistor type sensor of the transparent cell-based sensor according to the present invention.
  • FIG. 3 is a view schematically showing a manufacturing process sequence of the transparent cell-based sensor of the present invention.
  • FIG. 4 is a side cross-sectional view of the transparent cell-based sensor of the present invention prepared according to one embodiment of the present invention.
  • FIG. 5 is a diagram schematically illustrating a state in which a multi-detection sensor chip of the present invention is connected to a signal processing processor, a controller, and a data display.
  • the ion selective field effect transistor type sensor includes a transparent drain electrode and a source electrode, a transparent semiconductor layer formed on the transparent drain electrode and a source electrode, a transparent ion sensitive insulator sensing layer formed on the transparent substrate, and a transparent ion sensitive insulator sensing layer. And a reference electrode formed between the transparent ion selective membrane formed on the transparent ion selective membrane,
  • the oxygen detecting electrochemical sensor provides a transparent cell-based sensor comprising a transparent counter electrode, a reference electrode, and a transparent working electrode formed on the transparent ion sensitive insulator sensing layer.
  • 1 is a view schematically showing the configuration of a transparent cell-based sensor according to the present invention.
  • 2 is a view showing the components of the oxygen-sensing electrochemical sensor and ion selective field effect transistor type sensor of the transparent cell-based sensor according to the present invention.
  • the transparent cell-based sensor 100 includes an oxygen detecting electrochemical sensor 140 and an ion selective field effect transistor type sensor 150 and 160. And the control sample chamber 130 are formed at both sides to enable ion detection and optical measurement according to the cell response.
  • the ion selective field effect transistor type sensors 150 and 160 may include a transparent drain electrode 230, a transparent source electrode 231, a transparent semiconductor layer 240, a transparent ion sensitive insulator sensing layer 250, and a reference electrode 280. And the transparent ion selective membrane 260 may be sequentially formed on the transparent substrate 210.
  • the transparent cell-based sensor 100 is not only capable of detecting two or more ions, but is characterized in that it is made of a transparent material to optically measure the behavior of the cell.
  • the transparent cell-based sensor 100 forms a transparent drain electrode and a source electrode 230 and 231 by patterning and forming a transparent electrode layer on a transparent substrate so as to optically measure the behavior of the cell.
  • An ion-selective field effect transistor type sensor 150 to selectively detect two or more ions among pH, Ca 2+ , K + , Na + , and pCO 2 on the transparent drain electrode and the source electrode 230 and 231.
  • the transparent substrate 210 a glass substrate or a transparent plastic substrate may be used.
  • the transparent drain and source electrodes 230 and 231 formed on the transparent substrate 210 may be formed by depositing on the transparent substrate using a transparent metal oxide, a conductive polymer, a nanomaterial, or a mixture thereof.
  • the transparent drain and source electrodes 230 and 231 have transparency to enable optical measurement of cell behavior.
  • the transparent metal oxide may be a metal oxide-based material such as indium tin oxide (ITO), tin oxide (SnO 2 ), indium zinc oxide (IZO), aluminum zinc oxide (AZO), or titanium dioxide (TiO 2 ).
  • ITO indium tin oxide
  • SnO 2 tin oxide
  • IZO indium zinc oxide
  • AZO aluminum zinc oxide
  • TiO 2 titanium dioxide
  • any conductive metal oxide having transparency can be used without limitation.
  • polyaniline polypyrrole, poly (3,4-ethylenedithiothiophene) (poly (3,4-ethylenedioxythiophene)), and the like may be used.
  • graphene carbon nanotubes (CNT), nanowires (nanowire), and the like.
  • nanocomposites of the presented nanomaterials and conductive polymers can be used.
  • the ion selective field effect transistor type sensor 150 and 160 forms a transparent semiconductor layer 240 between the transparent drain electrode and the source electrode 230 and 231 and the transparent ion sensitive insulator sensing layer 250 on the transparent substrate 210. ). Thereafter, the transparent ion selective insulator sensing layer 250 is formed by forming the transparent ion selective membranes 260 and 270 and the reference electrode 280 therebetween.
  • the transparent semiconductor layer 240 is an organic semiconductor such as pentacene or an inorganic transparent oxide such as zinc oxide (ZnO), zinc tin oxide (ZnSnO), gallium zinc oxide (GaZnO), indium gallium zinc oxide (InGaZnO), or the like.
  • organic semiconductors that may be used to form the transparent semiconductor layer 240 include Me 2 -pentasine, bis-benzodithiophene (bis-BDT), and bis-thiophene dimers.
  • the ion selective field effect transistor type sensor 150 and 160 of the transparent cell-based sensor 100 detects a transparent ion sensitive insulator to detect pH, Ca 2+ , K + , Na + , and pCO 2 ions.
  • ion selective membranes 260 and 270 are sequentially formed to selectively pass only ions to be sensed in the electrolyte to be accumulated on the surface of the transparent ion sensitive insulator sensing layer 250.
  • the transparent ion sensitive insulator sensing layer 250 is typically Ta 2 O 5 , Al 2 O 3 , Si 3 N 4 And SiO 2 Deposition using a material selected from the group consisting of, or first forming a polymer material and then Ta 2 O 5 , Al 2 O 3 , Si 3 N 4 And SiO 2 It may be formed into a multilayer by depositing the back.
  • the transparent ion selective membranes 260 and 270 can be selected and used among pH detection membranes, Ca 2+ detection membranes, K + detection membranes, Na + detection membranes and pCO 2 detection membranes depending on the ions to be detected.
  • pH detection membranes are tridodecylamine, nonadecylpyridine, octadecylisonicotinate, dipropylaminoazobenzene derivative, nile blue derivative, o- Coated with a material selected from the group consisting of o-nitrophenyl octyl ether and potassium tetraarchis (p-chlorophenyl) borate, Ca 2+ Detection membrane is ETH 1001 TM ((-)-(R, R) -N, N '-[bis (11-ethoxycarbonyl) undecyl-N, N', 4,5-tetramethyl] -3,6-dioxaoctancediamide), ETH 129 TM (N, N, N ', N'-tetracyclohexyl-3-oxapentanediamide), K23El (4,16-Di-N-octadecylcarbamoyl
  • the oxygen detecting electrochemical sensor 140 includes a transparent counter electrode 310, a reference electrode 280, and a transparent working electrode 300, and the ion selective field effect transistor type sensors 150 and 160.
  • the transparent ion sensitive insulator sensing layer 250 may be disposed in parallel.
  • the transparent counter electrode 310 and the working electrode 300 of the oxygen detecting electrochemical sensor 140 are one or two selected from the group consisting of carbon nanotubes, graphene / hydroxyapatite, bromoform and polyethylene. It is formed from a mixture of the above.
  • the reference electrode 280 of the oxygen-sensing electrochemical sensor 140 is a silver / silver chloride reference electrode chlorinated after depositing silver, and polyvinyl chloride on the upper part of the silver / silver chloride reference electrode to improve stability of the reference electrode. It is desirable to form chloride (PVC) membranes.
  • a scaffold 440 for cell culture is formed on an ion selective field effect transistor type sensor and an oxygen sensing electrochemical sensor, and a well outside the sensor. 410 may be formed to perform cell culture and measurement of cell behavior.
  • a method of manufacturing a transparent cell-based sensor comprising an ion-selective field effect transistor type sensor disposed in parallel on a transparent substrate and an electrochemical sensor for oxygen sensing,
  • step 2 Forming an ion-selective field effect transistor type sensor in step 1 and then forming an electrochemical sensor for oxygen sensing to be disposed in parallel with the ion selective field effect transistor type sensor (step 2) It provides a method of manufacturing.
  • FIG. 3 is a view schematically showing a manufacturing process sequence of the transparent cell-based sensor of the present invention.
  • Step 1 is a step of forming an ion selective field effect transistor type sensor on the transparent substrate 210.
  • a transparent substrate 210 having acetone, alcohol, distilled water, or the like is prepared.
  • the transparent substrate 210 may be a glass substrate or a transparent plastic substrate, but is not limited thereto.
  • a transparent electrode layer is formed on the transparent substrate 210.
  • the transparent electrode layer is formed by coating on the transparent substrate 210 using a transparent metal oxide, a conductive polymer, a nanomaterial or a mixture thereof.
  • transparent metal oxide the transparent metal oxide
  • conductive polymer the conductive polymer
  • nanomaterial may be the same as those described above in the transparent cell-based sensor according to the present invention.
  • the transparent electrode layer is patterned to form the transparent drain electrode 230 and the source electrode 231.
  • the method of forming the transparent drain electrode 230 and the source electrode 231 by patterning the transparent electrode layer is divided into two cases.
  • the first method is a vapor deposition method using a transparent metal oxide such as indium tin oxide (ITO). Selective deposition using a lift-off process or a shadow mask using a lithography method, or inkjet printing, screen printing, etc. of conductive polymers and nanomaterials or composite materials thereof in solution state
  • the second method is a method of forming the drain electrode 230 and the source electrode 231 by wet etching and dry etching of the transparent metal oxide deposited by the vapor deposition method.
  • an inorganic transparent thin film may be further formed before forming the transparent electrode layer on the transparent substrate 210.
  • the transparent semiconductor layer 240 is deposited between the transparent drain electrode 230 and the source electrode 231 according to the photolithography method and the shadow mask method, as described above in the transparent cell based sensor according to the present invention.
  • Organic semiconductors such as pentacene or the like, or inorganic transparent oxide semiconductor materials such as zinc oxide (ZnO), indium gallium zinc oxide (InGaZnO) and the like may be deposited.
  • the transparent ion sensitive insulator detection layer 250 is formed.
  • the ion selective field effect transistor type sensor may be manufactured by forming the transparent ion sensitive insulator sensing layer 250 as a single layer. Another method is to first coat organic insulators such as parylene, polyvinylpyrrolidone (PVP), polyvinyl tate (PVA), polyimide (PI), etc. It may be coated on top to form a transparent ion sensitive insulator sensing layer 250 having a double layer structure.
  • organic insulators such as parylene, polyvinylpyrrolidone (PVP), polyvinyl tate (PVA), polyimide (PI), etc. It may be coated on top to form a transparent ion sensitive insulator sensing layer 250 having a double layer structure.
  • transparent ion selective membranes 260 and 270 may be formed thereon.
  • the transparent ion selective membranes 260 and 270 have two types selected from a pH detection membrane, a Ca 2+ detection membrane, a K + detection membrane, a Na + detection membrane, and a pCO 2 detection membrane on top of the transparent ion sensitive insulator detection layer 250.
  • Transparent ion selective membranes 260 and 270 can be deposited by printing processes such as inkjet printing, screen printing, and the like, pH detection membranes, Ca 2+ detection membranes, K + detection membranes, Na
  • the specific materials of the + detection membrane and the pCO 2 detection membrane may be the same as those described above in the cell-based transparency sensor according to the present invention.
  • the reference electrode 280 is preferably deposited as a reference electrode of silver / silver chloride by selectively depositing a metal layer using a shadow mask and chlorinating silver by wet and dry methods. Thereafter, the membrane 290 of polyvinyl chloride (PVC) may be selectively formed on the reference electrode 280 by inkjet printing.
  • PVC polyvinyl chloride
  • Step 2 is a step of forming an oxygen-sensitized electrochemical sensor so as to be disposed in parallel with the ion-selective field effect transistor type sensor after forming the ion selective field effect transistor type sensor as described above.
  • the oxygen-sensing electrochemical sensor forms an ion-selective field effect transistor type sensor, and then forms an ion-selective field effect transistor type sensor on the transparent ion-sensitive insulator sensing layer 250 formed during the manufacture of the ion-selective field effect transistor type sensor.
  • the transparent counter electrode 310, the reference electrode 280, and the transparent working electrode 300 are formed by a shadow mask method so as to be disposed in parallel with each other, and the oxygen sensing membrane 320 is printed on the working electrode 300. It can be produced by forming by a process.
  • the cells are formed on the ion selective field effect transistor type sensor and the oxygen sensing electrochemical sensor. Scaffolds 440 and wells 410 may be formed for culture.
  • FIG. 4 is a side cross-sectional view of a transparent cell based sensor according to the present invention made in accordance with one embodiment of the present invention.
  • specific cells 420 to be measured in the transparent cell based sensor according to the present invention are cultured on the scaffold 440 surface in the culture solution 430.
  • the analysis can be performed optically to measure the metabolism and behavior of the cell according to the purpose of analysis, such as toxic immune analysis of the cell for a particular drug.
  • the transparent cell-based sensor according to the present invention can be used to optically observe the real-time emergence of the cell as it is manufactured using a transparent material, the change in metabolism of the cells in the electrochemical sensor for oxygen detection and ion selective field effect transistor type sensor According to the change of the current value generated by the pH, K + , Ca 2+ , Na + , pCO 2 , O 2 concentration gradient changes can be confirmed the characteristics of the cells according to the environment.
  • the present invention is a multi-detection sensor chip comprising a transparent cell-based sensor and a readout conditioning circuit,
  • the transparent cell based sensor comprises a transparent substrate; An ion selective field effect transistor type sensor formed on the transparent substrate and an oxygen sensing electrochemical sensor formed to be disposed in parallel with the ion selective field effect transistor type sensor,
  • the read-out conditioning circuit provides a multi-detection sensor chip capable of optical measurement and electrochemical measurement, wherein the read-out conditioning circuit receives and conditions an electrical signal transmitted from a transparent cell-based sensor.
  • FIG. 7 is a diagram schematically illustrating a state in which a multi-detection sensor chip of the present invention is connected to a signal processing processor, a controller, and a data display.
  • the multi-detection sensor chip includes a transparent cell-based sensor and a read-out conditioning circuit integrated on one transparent substrate.
  • the transparent cell-based sensor is made of a transparent material as described above to optically observe the real-time emergence of the cell.
  • the transparent cell-based sensor converts the charge change caused by the cell's emergence into an electrical signal and transmits it to the read-out conditioning circuit.
  • the read-out conditioning circuit amplifies, filters, and impedances the electrical signal transmitted from the transparent cell-based sensor. Condition and deliver to the processor through roles such as matching and modulation.
  • the electrical signal transmitted from the read-out conditioning circuit is converted into a digital signal in the signal processing processor and transferred to the data display device according to the command of the controller circuit and then displayed.
  • the multi-detection sensor chip according to the present invention is manufactured by integrating a transparent cell-based sensor and a lead-out conditioning circuit on one transparent substrate, thereby not only optically observing the real-time emergence of the cells, Signals generated in transparent cell-based sensors can be detected electrochemically.

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Abstract

La présente invention concerne un capteur transparent à base de cellule capable d’observation optique en temps réel de comportement de cellule, un procédé de fabrication associé, et une puce de capteur multi-détection associée. Plus particulièrement, la présente invention concerne un capteur transparent à base de cellule capable d’observation optique en temps réel de comportement de cellule, un procédé de fabrication associé, et une puce de capteur multi-détection associée, le capteur pouvant détecter la concentration ionique d’un électrolyte conformément à la variation de l’activité métabolique de cellules en utilisant un capteur à transistor à effet de champ à ions sélectifs (ISFET) et un capteur électrochimique, et le capteur est fait d’un matériau transparent pour permettre la mesure optique et la mesure de comportement de cellule.
PCT/KR2010/004822 2009-07-22 2010-07-22 Capteur transparent à base de cellule capable d’observation optique en temps réel de comportement de cellule, procédé de fabrication associé, et puce de capteur multi-détection associée WO2011010880A2 (fr)

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US13/354,490 US8926812B2 (en) 2009-07-22 2012-01-20 Cell-based transparent sensor capable of real-time optical observation of cell behavior, method for manufacturing the same and multi-detection sensor chip using the same

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KR10-2009-0067026 2009-07-22
KR20090067026 2009-07-22
KR1020100071127A KR101257221B1 (ko) 2009-07-22 2010-07-22 세포 거동의 실시간 광학적 관찰이 가능한 투명성 세포 기반 센서, 이의 제조방법 및 이를 이용한 다중검출 센서칩
KR10-2010-0071127 2010-07-22

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WO2011010880A2 true WO2011010880A2 (fr) 2011-01-27
WO2011010880A3 WO2011010880A3 (fr) 2011-05-05

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002357577A (ja) * 2001-05-31 2002-12-13 Mitsubishi Heavy Ind Ltd 有酸素・無酸素両環境下における水素ガスの検出方法及び同装置
KR100848811B1 (ko) * 2006-09-29 2008-07-28 전자부품연구원 세포 배양 환경 및 주화성 측정 장치
KR20080094552A (ko) * 2007-04-19 2008-10-23 한국기계연구원 전도성고분자 나노센서 및 제조방법
JP2008263858A (ja) * 2007-04-20 2008-11-06 Tokyo Medical & Dental Univ 細胞応答計測装置および細胞応答計測チップ
KR20090056117A (ko) * 2007-11-30 2009-06-03 한양대학교 산학협력단 투명하고 플렉서블한 탄소나노튜브 박막 트랜지스터 및이의 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10325821A (ja) * 1997-05-26 1998-12-08 Nec Corp 電気化学測定装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002357577A (ja) * 2001-05-31 2002-12-13 Mitsubishi Heavy Ind Ltd 有酸素・無酸素両環境下における水素ガスの検出方法及び同装置
KR100848811B1 (ko) * 2006-09-29 2008-07-28 전자부품연구원 세포 배양 환경 및 주화성 측정 장치
KR20080094552A (ko) * 2007-04-19 2008-10-23 한국기계연구원 전도성고분자 나노센서 및 제조방법
JP2008263858A (ja) * 2007-04-20 2008-11-06 Tokyo Medical & Dental Univ 細胞応答計測装置および細胞応答計測チップ
KR20090056117A (ko) * 2007-11-30 2009-06-03 한양대학교 산학협력단 투명하고 플렉서블한 탄소나노튜브 박막 트랜지스터 및이의 제조방법

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