WO2011010824A2 - Verre à faible émissivité et son procédé de fabrication - Google Patents

Verre à faible émissivité et son procédé de fabrication Download PDF

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Publication number
WO2011010824A2
WO2011010824A2 PCT/KR2010/004520 KR2010004520W WO2011010824A2 WO 2011010824 A2 WO2011010824 A2 WO 2011010824A2 KR 2010004520 W KR2010004520 W KR 2010004520W WO 2011010824 A2 WO2011010824 A2 WO 2011010824A2
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Prior art keywords
low
glass
layer
emissivity
dielectric layer
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PCT/KR2010/004520
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English (en)
Korean (ko)
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WO2011010824A3 (fr
Inventor
전윤기
조금실
배일준
황승석
Original Assignee
㈜엘지하우시스
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Priority claimed from KR1020090067301A external-priority patent/KR101302273B1/ko
Application filed by ㈜엘지하우시스 filed Critical ㈜엘지하우시스
Priority to DE112010003037T priority Critical patent/DE112010003037T8/de
Priority to JP2012521571A priority patent/JP2012533514A/ja
Priority to US13/321,692 priority patent/US8722210B2/en
Priority to CN201080020074.1A priority patent/CN102421719B/zh
Priority to RU2011144649/03A priority patent/RU2561419C2/ru
Publication of WO2011010824A2 publication Critical patent/WO2011010824A2/fr
Publication of WO2011010824A3 publication Critical patent/WO2011010824A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3618—Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3642—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating containing a metal layer
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
    • C03C17/366—Low-emissivity or solar control coatings

Definitions

  • the present invention relates to a low-emissive glass and a method for producing the same.
  • Low emissivity glass is a low emissivity glass, which has a special coating on the glass surface that reflects solar radiation in the summer and preserves the infrared rays generated by the indoor heater in the winter, saving energy in buildings. It means functional glass which can bring effect.
  • an oxygen atmosphere is mainly formed by injecting oxygen into the chamber, and a method of depositing an oxide thin film on the low-emission layer under an oxygen atmosphere using a metal target material is used. Has been.
  • the first dielectric layer made of metal oxides, etc., the low-emission layer made of silver (Ag), etc., and the second dielectric layer made of metal oxides, etc. are sequentially formed on the substrate glass. It was composed of a deposited form.
  • the conventional low-emissive glass is contained in the low-emissive layer due to the high oxygen partial pressure injected into the chamber, since the metal is used as the target raw material under the oxygen atmosphere when the second dielectric layer is deposited on the low-emissive layer as described above.
  • the boundary between layers was blurred by mixing between the low-emissive layer and the second dielectric layer by oxidizing to the conductive metal, and for this reason, the emissivity value was significantly increased, thereby losing the functionality as the low-emissive glass.
  • a primer layer composed of metallic nickel chromium is deposited, and then, an oxygen atmosphere is formed to deposit the dielectric layer on the primer layer. Oxidation of the conductive metal was prevented.
  • the emissivity can be kept low by preventing the oxidation of the conductive metal contained in the low-emissive layer, but as the thickness of the metal thin film increases because the primer layer is additionally deposited on the low-emissive layer. Not only is the visible light transmittance reduced, but the addition of a primer layer deposition process makes the process complicated and costs more.
  • the present invention has been made to solve the above-described problems, and by forming a dielectric layer directly without forming a primer layer on the low-emissivity layer, an efficient low-emissive glass that can simultaneously exhibit high visible light transmittance with excellent emissivity and its The purpose is to provide a manufacturing method.
  • the present invention as a means for solving the above problems, low emission layer; And a dielectric layer formed on the low emissive layer, the emissivity being 0.01 to 0.3, and the low emissive glass having a visible light transmittance of 70% or more.
  • the present invention provides a method for manufacturing a low-emissive glass comprising the step of depositing a dielectric layer directly on the low-emissive layer using a metal oxide as a target under vacuum conditions.
  • the low-emissive glass of the present invention and the method for producing the same as described above, it is possible to form a dielectric layer while preventing the oxidation of the functional material contained in the low-emissive layer without forming a primer layer. Accordingly, the low-emissive glass according to the present invention can maintain excellent visible light transmittance and radiation performance simultaneously, thereby enabling an increase in the thermal insulation effect of the low-emissive glass and ensuring a comfortable visual field.
  • FIG. 1 is a cross-sectional view schematically showing the layer structure of the low-emissive glass according to an embodiment of the present invention.
  • Figure 2 is a graph showing the distribution of atoms between the layers of the low-emissive glass prepared by depositing a dielectric layer on the low-emissive layer using a metal as a target in an oxygen atmosphere according to the conventional method for producing low-emissive glass.
  • FIG. 3 is an interlayer layer of a low-emissive glass manufactured by depositing a dielectric layer on a low-emissive layer using a metal oxide as a target under a vacuum argon gas atmosphere according to a method of manufacturing a low-emissive glass according to an embodiment of the present invention.
  • the present invention is a low emission layer; And a dielectric layer formed on the low emissive layer, wherein the emissivity is 0.01 to 0.3 and the visible light transmittance is 70% or more.
  • the low-emissive glass of the present invention is a low-emissive layer; And a dielectric layer formed on the low emission layer, wherein the emissivity is 0.01 to 0.3 and the visible light transmittance is 70% or more.
  • low-emission glass is one of energy-saving plate glass, which means low emissivity glass, and such low-emissivity glass may be formed by forming a thin film of metal or metal oxide having excellent electrical conductivity on ordinary plate glass. In the visible light region, it means glass that provides excellent thermal insulation by lowering the emissivity of the coated surface while maintaining predetermined transmission characteristics.
  • emissivity means the rate at which an object absorbs, transmits, and reflects energy having any specific wavelength, that is, in the present invention, emissivity represents the degree of absorption of infrared energy in the infrared wavelength region. Specifically, when the far infrared rays corresponding to the wavelength region of about 2,500 to 40,000 nm exhibiting a strong thermal action is applied, it means the ratio of infrared energy absorbed to the applied infrared energy.
  • Kirchhoff's law states that the absorbed energy is equal to the emissivity because the infrared energy absorbed by the material is equal to the energy emitted again.
  • Such emissivity can be measured through various methods commonly known in the art, and is not particularly limited, for example, can be measured by a facility such as MK-3 according to the KSL2514 standard.
  • the absorption rate to far-infrared rays exhibiting such a strong thermal action may represent a very important meaning in measuring the degree of thermal insulation performance.
  • the emissivity of the low-emissivity glass according to the present invention is 0.01 to 0.3, preferably 0.01 to 0.2, more preferably 0.01 to 0.1, most preferably 0.01 to 0.08.
  • the thermal insulation effect may be improved according to the reflection of far infrared rays, but the visible light transmittance may be lowered.
  • the emissivity exceeds 0.3, the far infrared reflectance may be too low to lower the thermal insulation performance.
  • the low-emissivity glass according to the present invention has a visible light transmittance of 70% or more, preferably 80% or more, and more preferably 85% or more.
  • the visible light transmittance is less than 70%, it may be difficult to provide a comfortable view.
  • the low-emissive glass of the present invention exhibits high visible light transmittance with low emissivity, and can be used as a functional glass capable of providing a good visual field with excellent heat insulating effect.
  • the sheet resistance of the low-emissivity glass according to the present invention is not particularly limited, and may be used without limitation within the range capable of simultaneously exhibiting excellent emissivity and visible light transmittance in accordance with the purpose of the present invention, for example, the low radiation
  • the sheet resistance of the glass may be 5 to 15 ⁇ / cm 2.
  • sheet resistance means a specific resistance per unit thickness of the thin film, the lower the sheet resistance, the lower the emissivity value can be obtained excellent heat insulating performance. Accordingly, it may be a measure to measure the infrared reflectance in the low-emissivity glass.
  • the sheet resistance may be measured through various methods, and the measuring method is not particularly limited, but may be measured using, for example, a multimeter or a four-point probe.
  • the thickness of the low-emissive layer should be thick, so there is a fear that the visible light transmittance is lowered, if it exceeds 15 ⁇ / cm2, the emissivity value is too large, The adiabatic effect can be reduced.
  • the low radiation layer is a functional layer that serves to block radiation in the infrared region, including a metal having excellent thermal conductivity
  • the type is not particularly limited, for example, silver (Ag), copper (Cu ), Gold (Au), aluminum (Al) and platinum (Pt) may include one or more selected from the group consisting of, considering the price, color and low emission characteristics, preferably excellent electrical conductivity Silver (Ag) can be used.
  • the low-emissivity layer of the low-emissivity glass according to the present invention may include the conductive metal as exemplified above as such, and may be nickel (Ni), palladium (Pd), platinum (Pt), copper from the viewpoint of durability improvement and the like.
  • a conductive metal doped with one or more elements selected from the group consisting of (Cu) and gold (Au) may be used, and other additives may be further mixed to improve various functionalities.
  • the thickness of the low-emissivity layer is not particularly limited and may be formed in various thicknesses within the range that can simultaneously implement a low emissivity and excellent visible light transmittance according to the purpose of the present invention, for example, 8 to 35 nm, preferably from 8 to 15 nm.
  • the thickness of the low emission layer is less than 8 nm, it may be difficult to exert a heat insulation effect due to the high emissivity is significantly increased, the emissivity may be lowered when it exceeds 35 nm, but the visible light transmittance is relatively reduced to ensure a comfortable view It can be difficult.
  • the low-emissive glass according to the present invention may be a dielectric layer is formed directly on the low-emissive layer.
  • the dielectric layer is directly formed on the low emission layer
  • no other layer ex primer layer
  • the dielectric layer is formed directly on the low emission layer. I mean.
  • another layer may be formed on the low-emissive layer, but a dielectric layer may be directly formed on the low-emissive layer as described above, and the dielectric layer is directly formed on the low-emissive layer. If possible, it is possible to prevent a decrease in visible light transmittance or an increase in emissivity, which may be caused by the deposition of another layer, to simplify the process and to reduce the investment cost.
  • the type of the dielectric layer is not particularly limited, for example, zinc oxide, aluminum oxide, zirconium oxide, silicon dioxide, tin oxide ), Titanium oxide, bismuth oxide, indium doped tin oxide, gallium-doped zinc oxide, and aluminum-added zinc oxide (Al) doped zinc oxide) may include one or more selected from the group consisting of.
  • the material included in the dielectric layer is not limited to the above description, and various metal oxides may be included therein, and bismuth (Bi), boron (B), aluminum (Al), One or more elements selected from the group consisting of silicon (Si), magnesium (Mg), antimony (Sb), and beryllium (Be) may be doped.
  • Such a dielectric layer may contribute to improving chemical resistance, moisture resistance, wear resistance, and emissivity of the low-emissive glass according to the present invention.
  • the dielectric layer is also not particularly limited in thickness, but may be, for example, 10 to 100 nm, preferably 30 to 40 nm.
  • the thickness of the dielectric layer is less than 10 nm, there is a fear that the glass surface is discolored, when it exceeds 100 nm there is a fear that the visible light transmittance is lowered.
  • the low-emissive glass according to the present invention may further include a dielectric layer formed on the lower surface of the low-emissive layer.
  • the dielectric layer may serve to prevent contamination of the low emission layer by Na + ions as well as surface contamination of the glass substrate, The adhesion between the substrate and the low emissive layer and the emissivity can be improved.
  • the low-emissive glass according to the present invention may further include an overcoating layer formed on the dielectric layer formed on the low-emissive layer.
  • the overcoating layer protects the surface of the low-emissive glass and provides durability.
  • the material that can be used as the overcoating layer is not particularly limited in kind, and may include all materials that can be commonly used as the overcoating layer in the art.
  • silicon nitride (SiN), silicon nitride (SiAlN) or silicon oxynitride (SiNO x ), to which aluminum is added, may be included in the overcoating layer.
  • the low-emissivity glass according to the present invention may further include an undercoat layer formed on the lower surface of the low-emissivity layer.
  • the undercoat layer is for protecting the substrate of the low-emissive glass and providing durability.
  • the material that can be used as the undercoat layer is not particularly limited in kind, and may include a material that can be used as an undercoat layer in the art.
  • silicon nitride (SiN), silicon nitride (SiAlN) or silicon oxynitride (SiNO x ) to which aluminum is added may be included in the undercoat layer.
  • the low-emissivity glass according to the present invention has a high visible light transmittance with excellent heat insulation performance due to low emissivity, it can be widely used for building or automobile glass, which requires such a heat insulating effect and a comfortable visual field. .
  • the low-emission glass of the present invention is not limited to the above-described applications, but may be applied to glass in various fields requiring high thermal insulation performance and a comfortable visual field, and further layers for securing emissivity and improving visible light transmittance. Since there is no need to deposit the process cost is reduced, it can be usefully used as a large-area glass and the like.
  • FIG. 1 is a cross-sectional view schematically showing the layer structure of the low-emissive glass according to an embodiment of the present invention.
  • a low emission glass may include a substrate 110, a dielectric layer 130, a low emission layer 150, and a dielectric layer 170.
  • the dielectric layer 130, the low emission layer 150, and the dielectric layer 170 are sequentially formed on the substrate 110, and between the dielectric layer 130 and the low emission layer 150, or between the low emission layer 150 and the dielectric layer ( There is no fear that the visible light transmittance may be reduced since no other layer (ex. Primer layer) having low electrical conductivity is deposited between the 170).
  • the present invention also relates to a method for producing a low-emissive glass comprising directly depositing a dielectric layer on a low-emissive layer using a metal oxide as a target under vacuum conditions.
  • the vacuum condition means a condition for creating an atmosphere in a vacuum state
  • the deposition may be carried out under a vacuum process pressure of 1 to 10 mTorr, preferably a vacuum of 2 to 6 mTorr It can be carried out under a vacuum, more preferably 3 to 5 mTorr.
  • the process pressure is less than 1 mTorr, there is a risk that the film quality is lowered by the impact of the deposition material having a high energy on the substrate, if it exceeds 10 mTorr, the average free path of the particles may be reduced and deposition may be difficult. .
  • various inert gases conventionally used in this field may be supplied to form a vacuum during the deposition, and the type of the inert gas is not particularly limited, but for example, the deposition may be performed under nitrogen gas or argon gas. It may be carried out, preferably in an argon gas atmosphere.
  • the injection amount is not particularly limited, but may be, for example, 10 to 100 sccm (Standard Cubic Centimeter per minute).
  • the inert gas When the inert gas is injected at less than 10 sccm and the inert partial pressure is low, the plasma ignition of the sputter may not occur, and thus the deposition efficiency may be lowered. As the average free path is reduced, deposition may not be performed, or the physical properties of the film may be degraded by gas molecules.
  • the deposition method may include any deposition method conventionally used in the art for depositing a functional layer on glass, as long as it is performed under vacuum conditions, and is not particularly limited.
  • the vacuum deposition method performed under vacuum conditions may include all, resistance heating evaporation method, electron beam evaporation method, laser beam evaporation method, plasma sputtering method, etc. may be used for the deposition, preferably, Plasma sputtering methods can be used.
  • the sputtering method using the plasma When the sputtering method using the plasma is used, uniform film formation is possible, the adhesion of the thin film is high, and various materials such as metals, alloys, compounds, and insulators can be formed, as well as the target can be cooled, and a large target can be formed. It can be used to make glass of a large sized thin film, and specific examples of such plasma sputtering methods include DC sputtering, RF sputtering, magnetron sputtering, reactive sputtering, and the like.
  • the deposition of the dielectric layer may be performed by applying an input power of 1 to 5 W / cm2.
  • the deposition rate is low, the productivity is lowered, the adhesion between the film and the substrate to be deposited may be lowered, and when the input power exceeds 5 W / cm2, damage to the substrate, or the raw material There is a risk of causing large damage to the process equipment by causing breakage or melting of the target.
  • an inert gas such as argon gas is supplied into a vacuum chamber, and a voltage is applied to a cathode provided with a target material.
  • argon gas argon gas
  • electrons emitted from the cathode collide with gas atoms of argon gas to ionize argon (Ar + ).
  • Ar + gas atoms of argon gas
  • the argon emits electrons as it becomes an excite, energy is released, and a glow discharge occurs, thereby forming a plasma in which ions and electrons coexist.
  • Ar + ions in the plasma are accelerated toward the cathode (target), i.e., the metal oxide, by the large potential difference, and collide with the surface of the target. Accordingly, the target atoms stick out to form a thin film on the low emission layer to deposit a dielectric layer. Can be.
  • target i.e., the metal oxide
  • the deposition when the dielectric layer is deposited on the low-emission layer, the deposition is not performed under a high oxygen atmosphere, and thus the deposition can be performed under vacuum conditions. It is possible to prevent the metal material in the low-emissive layer from oxidizing without separately depositing a primer layer for preventing oxidation of the layer.
  • the low radiation layer does not have to be oxidized, so it is possible to maintain excellent radioactivity and not to deposit a primer layer to prevent oxidation of the low radiation layer, so that visible light may be generated due to the deposition of a primer layer having low electrical conductivity.
  • the decrease in transmittance can also be prevented.
  • argon gas was injected into the chamber at an injection speed of 30 sccm, and an input power of 1.4 W / cm 2 was applied to generate plasma. Accordingly, a first dielectric layer made of zinc oxide was formed by depositing target atoms on a glass substrate.
  • silver (Ag) is pre-positioned on the cathode using a target material, and argon gas is injected at an injection rate of 20 sccm, and then an input power of 0.8 W / cm 2 is applied to the first dielectric layer.
  • a low emissive layer was formed at.
  • an input power of 1.4 W / cm 2 is applied to form a second dielectric layer on the low emission layer. It was.
  • the thickness of the first dielectric layer formed on the glass substrate was 35 nm
  • the thickness of the low radiation layer was 10 nm
  • the thickness of the second dielectric layer formed on the low radiation layer was 45 nm.
  • Example 1 low-emission according to Example 2 Glass was prepared.
  • Example 3 Except that the deposition was performed so that the thickness of the low-emissive layer is 11.5 nm, all other conditions were the same as in Example 1 to prepare a low-emissive glass according to Example 3.
  • the thicknesses of the first primer layer and the second primer layer were 1.5 nm, respectively.
  • the first dielectric layer and the second dielectric layer were deposited in a high oxygen atmosphere in which 20 sccm of oxygen and 20 sccm of oxygen were mixed using zinc as a target material, and nickel chromium was used as the target material on the first dielectric layer. Except for depositing a first primer layer under the same conditions as in Example 1, and then depositing a low-emissivity layer on the first primer layer, the other conditions were the same as in Example 1 to Comparative Example 2 According to the low-emissivity glass was prepared.
  • the thickness of the first primer layer was 1.5 nm.
  • a low-emissive glass according to Comparative Example 3 was prepared in the same manner as in Comparative Example 2 except that the low-emissive layer was deposited directly on the first dielectric layer without depositing the first primer layer.
  • the emissivity and visible light transmittance of the low emissive glass according to Example 1 and Comparative Examples 1 to 3 were measured using an emissivity measuring device (INGLAS TIR 100-2) and a spectrophotometer (Spectrophotometer; model Shimazu solid spec 3700), This is shown in Table 1 below.
  • VT visible light transmittance (%)
  • the low-emissivity glass according to Example 1 exhibited a low emissivity of 0.078 and at the same time exhibited a significantly higher visible light transmittance of 86.7% compared to the low-emissivity glasses according to Comparative Examples 1 and 2.
  • the optical properties of the low-emissive glass according to Comparative Example 2 in which the second dielectric layer was vacuum deposited using zinc as a target material under high oxygen atmosphere were examined. Although oxidation of the emission layer was prevented, the emissivity was low as 0.062, but the visible light transmittance was low as 68% due to the stacking of the primer layer. In the high oxygen atmosphere, the first dielectric layer was used without the primer layer using zinc as a target material. And the low-emissivity glass according to Comparative Example 3 in which the second dielectric layer was deposited, the emissivity was remarkably high and the visible light transmittance was also low.
  • N nickel chromium layer
  • A silver (Ag) layer
  • Example 2 As shown in Table 2, in the average sheet resistance, the low-emissivity glass according to Example 2 was the lowest, and the emissivity was the lowest in Example 3, and the measured Examples 1 to 3 and Comparative Example 1 All low-emissivity glasses showed good sheet resistance and emissivity.
  • the low-emissive glass according to Comparative Example 1 further includes a nickel chromium layer having a relatively lower sheet resistance than zinc oxide in the same structure, compared to the low-emissive glass according to Examples 1 to 3, Example 3 Compared with, the average sheet resistance was rather low, but the primer layer composed of metals such as nickel chromium significantly reduced the overall visible light transmittance even though only a slight increase in thickness caused a great effect on the visible light transmittance. .
  • the low-emission glass according to Examples 1 to 3 maintained excellent radioactivity even without a nickel chromium layer, and exhibited excellent visible light transmittance of 80% or more.
  • Elemental analysis was performed with an x-ray photoelectron spectroscopy (XPS) analyzer while sputter etching using argon particles from the surface of the low-emissive glass according to Example 1 and Comparative Example 3.
  • XPS x-ray photoelectron spectroscopy
  • the low-emissive glass according to Comparative Example 3 manufactured by depositing a dielectric layer on the low-emissive layer using a metal as a target under a high oxygen atmosphere according to the conventional method of manufacturing low-emissive glass is low-emission
  • a mixing phenomenon between the layer and the dielectric layer occurred silver was observed on the surface of the second dielectric layer, and a mixing phenomenon in which silver eluted to the surface part appeared.
  • a region having a short etching time becomes a surface portion of the multilayer thin film.
  • a predetermined amount of silver constituting the low-emission layer is also contained in the surface portion.
  • a small amount of silver was also distributed at the upper boundary of the second dielectric layer and the low emission layer.
  • the low-emissivity glass according to Example 1 prepared according to an embodiment of the present invention was not observed at all until a certain time while performing the etching from the surface, the low-emission layer It was found that silver was observed uniformly in the corresponding area, and it can be seen that the low-emissive layer and the dielectric layer exist in a clearly separated state.

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Abstract

La présente invention se rapporte à du verre à faible émissivité et à son procédé de fabrication. Le verre à faible émissivité comprend : une couche à faible émissivité ; et une couche diélectrique formée sur la couche à faible émissivité, le verre ayant une émissivité comprise entre 0,01 et 0,3 et une transmissivité à la lumière visible de 70 % ou plus. La présente invention peut fournir un verre à faible émissivité présentant de bonnes performances émissives tout en présentant également une transmissivité de lumière visible élevée. En outre, selon la présente invention, le processus de fabrication du verre à faible émissivité décrit ci-dessus peut être simplifié, et la quantité d’investissement initial peut être réduite.
PCT/KR2010/004520 2008-08-14 2010-07-12 Verre à faible émissivité et son procédé de fabrication WO2011010824A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE112010003037T DE112010003037T8 (de) 2009-07-23 2010-07-12 Glas mit geringem Emissionsvermögen und Verfahren zur Herstellung desselben
JP2012521571A JP2012533514A (ja) 2009-07-23 2010-07-12 低放射ガラス及びその製造方法
US13/321,692 US8722210B2 (en) 2008-08-14 2010-07-12 Low emissivity glass and method for manufacturing the same
CN201080020074.1A CN102421719B (zh) 2009-07-23 2010-07-12 低辐射玻璃及其制造方法
RU2011144649/03A RU2561419C2 (ru) 2009-07-23 2010-07-12 Низкоэмиссионное стекло и способ его получения

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CN102421719A (zh) 2012-04-18
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DE112010003037T8 (de) 2013-06-06
JP2012533514A (ja) 2012-12-27
DE112010003037T5 (de) 2013-04-18
RU2011144649A (ru) 2013-08-27
RU2561419C2 (ru) 2015-08-27

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