WO2011009895A1 - Composant semi-conducteur émettant un rayonnement et module de caméra - Google Patents

Composant semi-conducteur émettant un rayonnement et module de caméra Download PDF

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Publication number
WO2011009895A1
WO2011009895A1 PCT/EP2010/060581 EP2010060581W WO2011009895A1 WO 2011009895 A1 WO2011009895 A1 WO 2011009895A1 EP 2010060581 W EP2010060581 W EP 2010060581W WO 2011009895 A1 WO2011009895 A1 WO 2011009895A1
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WO
WIPO (PCT)
Prior art keywords
radiation
electrochromic element
emitting semiconductor
electrochromic
emitting
Prior art date
Application number
PCT/EP2010/060581
Other languages
German (de)
English (en)
Inventor
Stephan Preuss
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2011009895A1 publication Critical patent/WO2011009895A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
    • G02F1/1516—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising organic material
    • G02F1/15165—Polymers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/23—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  for the control of the colour
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/44—Arrangements combining different electro-active layers, e.g. electrochromic, liquid crystal or electroluminescent layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Definitions

  • the present invention relates to a
  • a radiation-emitting semiconductor component for example a light-emitting diode (LED), an IR diode, a photodiode or a super-luminescence diode, and a camera module.
  • a radiation-emitting semiconductor component generally comprises a semiconductor body which emits electromagnetic radiation at least from its front side. Such semiconductor devices are used for example in mobile phones. Depending on the application, it is desirable in this case for the semiconductor component to have a low-contrast in its
  • Hide was previously introduced into the encapsulation of a diffuse, usually appearing white material. This allows in particular a direct visual contact to a
  • Conversion layer can be avoided on the semiconductor body. Due to the diffuser, a white impression of the encapsulation of the semiconductor component generally results. Purpose a different color impression of the semiconductor device
  • the diffuser causes light losses of the semiconductor device by absorption and Scattering. Also, the introduction of the diffuser in the
  • Object of the present invention is a
  • Another object of the present invention is to provide a camera module having a radiation-emitting
  • a radiation-emitting semiconductor component in particular comprises a semiconductor body which is in operation
  • the electrochromic element emits electromagnetic radiation at least from a front side, and an electrochromic element whose optical properties by applying an electrical voltage can be changed, wherein the electrochromic element is arranged downstream of the semiconductor body in the emission direction.
  • the semiconductor component can be, for example, a light-emitting diode (LED), an IR diode or a
  • IR diode refers to a light-emitting diode which is suitable for electromagnetic radiation from the infrared during operation
  • Semiconductor device is not in operation and continue to a largely unimpeded emission of the radiation
  • the electrochromic element comprises a first electrode layer and a second one
  • Electrode layer between which at least one
  • functional electrochromic layer having at least one functional electrochromic material, at least one ion-conducting layer and at least one ion-storing
  • the electrochromic material of the electrochromic element is suitable for changing its optical properties when a voltage is applied.
  • the electrochromic element it is possible for the electrochromic element to have its appearance of
  • the electrochromic element in a first state is transparent to visible light.
  • an electrical Voltage is placed the electrochromic element in a second state in which the electrochromic material appears colored, such as blue.
  • the electrochromic element maintains its state even after the voltage is turned off. In other words, the electrochromic element is switched by applying a voltage from a first state to a second state different from the first state.
  • Electrochromic elements are described, for example, in the document entitled "Switchable Electrochromic Filters as Spectrally Selective Light Modulators" by A. Kraft et al., Photonik 2/2007, pages 76 to 78.
  • the functional electrochromic material may be selected, for example, from the group of oxides of transition metals or from the group of rare earth hydrides.
  • Material is an organic material.
  • Suitable functional electrochromic materials of organic nature are, for example: polyaniline, poly-o-phenylenediamine, polythiophene, poly-3-methylthiophene, 3,4-polyethylene dioxythiophene, polypyrrole and 3,4-polyethylene-dioxypyrrole.
  • Suitable oxides of the transition metals that can be used as the functional electrochromic material are
  • tungsten trioxide for example, tungsten trioxide, molybdenum oxide, certite oxide, vanadium oxide, titanium vanadium oxide, chromium vanadium oxide,
  • Niobium vanadium oxide, niobium oxide and iridium oxide serves as an ion storage, while the ion-conducting layer is intended to be ions from the ion-storing layer in the electrochromic
  • the ion-conducting layer is preferably arranged between the ion-storing layer and the electrochromic layer.
  • the ion-conducting layer is particularly preferably in direct contact with the electrochromic layer and the
  • Ion-storing layer arranged.
  • the ion-storing layer also has an electrochromic material which is used in the
  • the first electrode layer and the second electrode layer contain, for example, a transparent conductive oxide (TCO) or consist of a TCO.
  • TCOs are usually metal oxides, such as
  • ITO indium tin oxide
  • Metal oxygen compounds such as ZnO, SnO 2 or In 2 O 3 also include ternary metal oxygen compounds such as Zn 2 SnO 4 , ZnSnO 3, MgIn 2 O 4 , GalnO 3, Zn 2 In 2 Os or In 4 Sn 3 Oi 2 or mixtures of different transparent conducting compounds Oxides to the group of TCOs.
  • ternary metal oxygen compounds such as Zn 2 SnO 4 , ZnSnO 3, MgIn 2 O 4 , GalnO 3, Zn 2 In 2 Os or In 4 Sn 3 Oi 2 or mixtures of different transparent conducting compounds Oxides to the group of TCOs.
  • the TCOs are not necessarily of a stoichiometric composition and may also be p- and n-doped.
  • the electrochromic element is particularly suitable for use in a radiation-emitting semiconductor component to be on or over its semiconductor body one
  • Wavelength-converting layer is applied.
  • Such a wavelength-converting layer comprises a wavelength conversion substance which converts at least part of the radiation generated by the semiconductor body into radiation of a different wavelength. This makes it possible, in particular, to provide a semiconductor body which emits white light in combination with the wavelength-converting layer.
  • wavelength-converting layer usually one
  • Electrochromic element can this color impression
  • the electrochromic element is preferably arranged between the wavelength-converting layer and a radiation-emitting front side of the semiconductor component.
  • the electrochromic element may be switched by applying a voltage from a first state to a second state, wherein the
  • electrochromic element in the first state at least
  • the electrochromic element is permeable in the first state, preferably transparent, for visible light.
  • electrochromic material which causes a blue color impression in the second state
  • tungsten trioxide suitable.
  • Such an electrochromic element is particularly suitable for concealing the color impression of a yellow-appearing wavelength-converting layer.
  • the electrochromic element in a suitably switched state, optically conceals the wavelength-converting layer, so that it is hidden from an external human observer or at least helps to ensure that it does not stand out optically.
  • the electrochromic element can be applied to the
  • Element is on which one of the two electrode layers of the electrochromic element is applied.
  • Element is disposed within the lens.
  • the electrochromic element is on a Radiation-emitting front of the lens arranged.
  • the radiation-emitting front side of the lens which is opposite the underside of the lens, particularly preferably represents a substrate for the electrochromic element, to which one of the two electrode layers of the electrochromic element is applied.
  • Embodiment offers the advantage that instead of four only three electrical connection points are necessary.
  • the present idea to use an electrochromic element to temporarily hide parts of a device from a human observer, or at least to achieve that they do not visually stand out, but the
  • Radiation passage area must be optically accessible, since they are provided, for example,
  • emitting or receiving electromagnetic radiation is not due to a radiation-emitting
  • Such a camera module comprises in particular a
  • the electrochromic element wherein the electrochromic element between the radiation-emitting semiconductor device and a radiation passage area of the camera module is arranged.
  • the radiation passage area is in addition to this provided that during operation of the camera module external light through the radiation passage area into the
  • Radiation can penetrate through the light passage area through to the outside.
  • the visual appearance of the camera module can be improved because with the help of the electrochromic element at least parts of the
  • Radiation-emitting semiconductor device can be hidden from a human observer.
  • the radiation-emitting semiconductor component- such as a light-emitting diode-serves, for example, as a flashlight in the camera module.
  • the camera module can also be an IR diode that emits electromagnetic radiation from the infrared spectral range or a red diode, the
  • emits electromagnetic radiation from the red spectral range include.
  • An IR diode or a red diode can be used for autofocusing.
  • the camera module further comprises a CCD module (charged coupled device, CCD), which is used for
  • the electrochromic element is preferably arranged between the light passage surface on the one hand and the semiconductor component and the CCD module on the other hand.
  • the radiation passage area is provided so that external light passes through the radiation passage area onto the CCD module during operation of the camera module and furthermore radiation generated by the radiation-emitting semiconductor component passes through the radiation transmission area
  • Light passage surface can penetrate through to the outside. It is understood that the abovementioned embodiments of the semiconductor component can also be combined with such a camera module.
  • the camera module is suitable, for example, to be installed in a mobile telephone.
  • Figure 5 a schematic sectional view of a
  • the radiation-emitting semiconductor component according to the exemplary embodiment of FIG. 1 comprises a
  • Radiation-emitting semiconductor body 1 which is mounted on a support 2.
  • the semiconductor body 1 is contacted on the one hand via its rear side 3 with a third connection point (not explicitly in the figure
  • the radiation-emitting semiconductor body 1 has an active radiation-generating zone.
  • the active zone preferably comprises a pn junction, a double heterostructure, a single quantum well or more preferably a multiple quantum well structure (MQW) for generating radiation.
  • MQW multiple quantum well structure
  • the active zone is preferably suitable for
  • Semiconductor body 1 is a wavelength converting
  • the wavelength-converting layer 8 is suitable in the present case, radiation of a first
  • Wavelength range which is generated by the semiconductor body 1, in radiation of another, usually longer
  • Wavelength convert For example, the first wavelength convert.
  • Wavelength-converting layer 8 suitable for blue radiation of the semiconductor body 1 in yellow radiation
  • wavelength-converting layer 8 is a yellow one
  • Radiation-emitting front side 4 of the semiconductor body 1 is arranged downstream in the emission direction, so that a
  • the lens 9 is intended to be the emission characteristic of the
  • Semiconductor device such as the bonding wire 6 or the wavelength-converting layer 8 on the
  • electrochromic element 11 is arranged.
  • Element 11 is the semiconductor body 1 in this case
  • the optical properties of the electrochromic element 11 can be changed by applying an electrical voltage.
  • the electrochromic element 11 by
  • Applying a voltage can be reversibly brought from a first state to a second state, too
  • the electrochromic element 11 is preferably permeable to those generated by the semiconductor body 1 and the
  • the electrochromic element 11 comprises in the
  • Electrode layer 15 is in this case applied in direct contact with the underside 10 of the lens 9, while the second electrode layer 16 is arranged on a substrate 17 which at the same time encapsulates the electrochromic
  • Element 11 is used.
  • a substrate 17 for example, serve a glass plate.
  • the electrochromic layer 12 comprises present tungsten trioxide, so that the electrochromic element 11 in the first
  • Permeable state preferably transparent, for visible light and appears blue in the second state.
  • the electrochromic element 11 can also comprise one of the following materials as a functional electrochromic material: polyaniline, poly-o-phenylenediamine, polythiophene, poly-3-methylthiophene, 3,4-polyethylene-dioxythiophene, polypyrrole and 3,4-polyethylene dioxypyrrole, molybdenum oxide, certitanium oxide, vanadium oxide,
  • the ion-conductive layer 13 may be
  • an electrolytic layer which is preferably present as a film.
  • the ion-conductive material for the ion-conductive layer 13 for example, at least one of the following
  • proton-conducting electrolytes such as ZrO 2, Al 2 O 3, lithium ion-conducting
  • Solid electrolytes such as Li / MgF 2 , Li 3 N or Li 2 WO 4 , dilute acids, such as H 3 PO 4 , organic or aqueous solutions of alkali metal salts, solutions of
  • Lithium salts such as lithium perchlorate in
  • Proton conductors such as poly-2-acrylamide-2-methylpropanesulfonic acid (poly-AMPS), mixtures of
  • Phosphoric acid or sulfuric acid with polymers such as
  • PEO Polyethylene oxide
  • composite electrolytes such as inorganic-organic composites - also called ormolytically (“organically modified ceramic electrolytes”) - with the ability
  • An ion-conductive material suitable to be used in conjunction with tungsten trioxide as the electrochromic material is, for example, an organic composite electrolyte of 3-glycidyloxypropyltrimethoxysilane (GPTS),
  • Tetraethylene glycol (TEG), lithium perchlorate and zirconium IV propylate As an ion-storing material for the ion-storing
  • Layer 14 is suitable, for example, at least one of the following materials: cerium oxide (CeO 2 ), mixed oxides, such as
  • CeO 2 -TiO 2 CeO 2 -ZrO 2 or CeO 2 -SiO 2 .
  • CeO 2 -TiO 2 is used as the compound having tungsten trioxide as the electrochromic material.
  • each support elements 18 are arranged on the support 2, which serve to carry the lens 9.
  • the support element 18 has a plated-through hole, that is, the first electrode layer 15 is in this case continued laterally outward through the support element 18.
  • the first electrode layer 15 is electrically conductively connected to a metallic layer 33, which is pulled down laterally over the support element 18 of the lens 9 as far as the carrier 2.
  • the metallic layer 33 can, for example, be vapor-deposited or sputtered on.
  • the lens 9 is further adhered to the carrier 2 by means of an electrically conductive adhesive (not explicitly shown in FIG. 1), which is provided at this point with a second electrical connection point 19.
  • the second electrical connection point 19 extends from a region below the lens 9 to a region outside the lens 9, which is intended to make electrical contact with the component.
  • the second electrode layer 16 is further pulled down on an inner side 20 of another support element 18 facing the semiconductor body 1.
  • the second electrode layer 16 is electrically conductively connected to a metallic layer 33 'on the inner side 20 of the support element 18, which may, for example, be vapor-deposited or sputtered on.
  • the lens 9 is adhered in this area with an electrically conductive adhesive on the first electrical connection point 7, which extends from a portion of the support 2 within the lens 9 to a portion of the support 2 outside the lens 9, so that the second
  • Electrode layer 16 is electrically conductively connected to the first connection point 7.
  • the semiconductor body 1 and the electrochromic element 11 are according to the embodiment of Figure 1 via a common mass point, namely the first electrical
  • Wavelength-converting layer 8 arranged in direct contact with the front side 4 of the semiconductor body 1.
  • Wavelength-converting layer 8 is arranged at a distance from the radiation-emitting front side 4 of the semiconductor body 1, for example on the to the
  • the electrochromic element 11 in the semiconductor component according to FIG. 2 is arranged inside the lens 9.
  • the electrical contacting of the semiconductor body 1 and of the electrochromic element 11 in the semiconductor component according to FIG. 2 differs from the electrical contacting of the semiconductor body 1 and the electrochromic element 11 in the semiconductor component according to FIG.
  • the semiconductor body 1 on the front side starting from a bonding pad 5 via a bonding wire 6 electrically connected to a first electrical connection point 7.
  • the semiconductor body 1 is electrically conductively connected to a second electrical connection point 19, for example with Help of a solder or an electrically conductive adhesive.
  • the second electrical connection point 19 extends along the carrier 2 to outside the lens 9.
  • the first electrode layer 15 is by means of a
  • junction 19 electrically conductively connected, so that the semiconductor body 1 and the electrochromic element 11 in turn have a common ground point.
  • the second electrode layer 16 is likewise connected to a third electrical layer by means of a metallic layer 33 '
  • junction 22 electrically connected, which is located laterally of the support member 18 for the lens 9 on the support 2.
  • the electrochromic element 11 is arranged on the radiation-emitting front side 23 of the lens 9.
  • the electrochromic element 11 may be constructed, for example, as already described with reference to FIG 1, wherein as a substrate 17 for one of
  • Electrode layers 15, 16 are preferred.
  • Radiation-emitting front side 23 of the lens 9 is used.
  • electrochromic element 11 is over two
  • the radiation-emitting semiconductor component according to the exemplary embodiment of FIG. 4 in contrast to the exemplary embodiments of FIGS. 1 to 3, has no lens 9. Furthermore, the semiconductor body 1 according to FIG. 4 is mounted in the recess 24 of a component housing 25.
  • Recess 24 in this case has the shape of a reflector, that is, its side walls 26 are inclined outwardly.
  • the component housing 25 also has a to the
  • the electrochromic element 11 in this case has two substrates 17, 17 ', for example glass plates, wherein on the one substrate 17, the first
  • Electrode layer 15 is applied and on the other
  • Electrode layer 16 is arranged so that in each case lateral projections arise on which the respective
  • Electrode layer 15, 16 exposed. About these exposed areas, the respective electrode layer 15, 16
  • the second connection point 19 and the third connection point 22 is between the first electrode layer 15 and the second
  • Electrode layer 16 the electrochromic layer 12, the ion-conducting layer 13 and the ion-storing layer 14 are arranged, as already described in detail with reference to FIG.
  • the camera module according to the exemplary embodiment of FIG. 5 has a radiation-emitting light-emitting diode chip 28 as a radiation-emitting semiconductor component, which is provided for this purpose is suitable to emit visible light. That of the
  • the LED chip 28 emitted light is intended to serve as a flash and should therefore have a color in the white area of the CIE standard color chart. For this reason, the LED chip 28 includes besides the
  • wavelength converting layer 8 which is on the
  • Semiconductor body is arranged.
  • Wavelength-converting layer 8 converts a portion of the radiation generated by the semiconductor body 1 such that the LED chip 28 emits white light.
  • the LED chip 28 is arranged together with a CCD module 29 on a camera support 30 such that radiation of the semiconductor body 1 by a
  • Radiation passage area 31 to the outside and external light can pass through the radiation exit surface 31 in the interior of the camera module to the CCD module 29.
  • a camera lens 32 is further arranged. Between the radiation passage area 31 and the
  • the electrochromic element 11 may comprise, for example, two substrates 17, 17 ', approximately two glass plates, each provided with an electrode layer 15, 16. Between the two electrode layers 15, 16, the electrochromic layer 12, the ion-conducting layer 13 and the ion-storing layer 14 are arranged.
  • Electrochromic element 11 is for the sake of

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)

Abstract

L'invention concerne un composant semi-conducteur émettant un rayonnement et comprenant un corps semi-conducteur (1) qui émet en fonctionnement un rayonnement électromagnétique par au moins une face avant (4) et un élément électrochrome (11) dont les propriétés optiques peuvent être modifiées par application d'une tension électrique. L'élément électrochrome (11) est placé en aval du corps semi-conducteur (1) dans sa direction d'émission. L'invention concerne également un module de caméra doté d'un élément électrochrome.
PCT/EP2010/060581 2009-07-22 2010-07-21 Composant semi-conducteur émettant un rayonnement et module de caméra WO2011009895A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009034250.8 2009-07-22
DE102009034250A DE102009034250A1 (de) 2009-07-22 2009-07-22 Strahlungsemittierendes Halbleiterbauelement und Kameramodul

Publications (1)

Publication Number Publication Date
WO2011009895A1 true WO2011009895A1 (fr) 2011-01-27

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DE102009034250A1 (de) 2009-07-22 2011-01-27 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Kameramodul
EP2823224B1 (fr) * 2012-03-09 2015-12-09 Koninklijke Philips N.V. Agencement d'émission de lumière réglable en couleur
DE102013101532B4 (de) * 2013-02-15 2017-12-28 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
US9159890B2 (en) 2013-02-15 2015-10-13 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component
DE102013101530A1 (de) 2013-02-15 2014-08-21 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
DE102013105229A1 (de) 2013-05-22 2014-11-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelementes
DE102018101582B4 (de) * 2018-01-24 2022-10-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlung emittierende Vorrichtung

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